CN109068558A - 屏蔽罩和终端 - Google Patents
屏蔽罩和终端 Download PDFInfo
- Publication number
- CN109068558A CN109068558A CN201811208593.5A CN201811208593A CN109068558A CN 109068558 A CN109068558 A CN 109068558A CN 201811208593 A CN201811208593 A CN 201811208593A CN 109068558 A CN109068558 A CN 109068558A
- Authority
- CN
- China
- Prior art keywords
- metal layer
- shielding case
- power supply
- layer
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 113
- 239000002184 metal Substances 0.000 claims abstract description 113
- 239000003990 capacitor Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims description 9
- 150000002739 metals Chemical class 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 abstract description 15
- 239000010410 layer Substances 0.000 description 82
- 238000000034 method Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- ZJRXSAYFZMGQFP-UHFFFAOYSA-N barium peroxide Chemical compound [Ba+2].[O-][O-] ZJRXSAYFZMGQFP-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0007—Casings
- H05K9/002—Casings with localised screening
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811208593.5A CN109068558B (zh) | 2018-10-17 | 2018-10-17 | 屏蔽罩和终端 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811208593.5A CN109068558B (zh) | 2018-10-17 | 2018-10-17 | 屏蔽罩和终端 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109068558A true CN109068558A (zh) | 2018-12-21 |
CN109068558B CN109068558B (zh) | 2019-11-15 |
Family
ID=64764230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811208593.5A Active CN109068558B (zh) | 2018-10-17 | 2018-10-17 | 屏蔽罩和终端 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109068558B (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4954807A (en) * | 1987-10-30 | 1990-09-04 | Vdo Adolf Schindling Ag | Combination instrument for automotive vehicles |
CN1463451A (zh) * | 2001-06-08 | 2003-12-24 | 松下电器产业株式会社 | 层叠薄膜电容器及其制造方法 |
CN1469475A (zh) * | 2002-06-28 | 2004-01-21 | 三洋电机株式会社 | 半导体装置 |
US6903918B1 (en) * | 2004-04-20 | 2005-06-07 | Texas Instruments Incorporated | Shielded planar capacitor |
US20100244190A1 (en) * | 2009-03-24 | 2010-09-30 | Toshihiko Nakano | Semiconductor device and manufacturing method |
CN206835541U (zh) * | 2016-04-25 | 2018-01-02 | 莱尔德电子材料(深圳)有限公司 | 板级屏蔽件、电子装置、系统级封装模块和屏蔽模块 |
-
2018
- 2018-10-17 CN CN201811208593.5A patent/CN109068558B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4954807A (en) * | 1987-10-30 | 1990-09-04 | Vdo Adolf Schindling Ag | Combination instrument for automotive vehicles |
CN1463451A (zh) * | 2001-06-08 | 2003-12-24 | 松下电器产业株式会社 | 层叠薄膜电容器及其制造方法 |
CN1469475A (zh) * | 2002-06-28 | 2004-01-21 | 三洋电机株式会社 | 半导体装置 |
US6903918B1 (en) * | 2004-04-20 | 2005-06-07 | Texas Instruments Incorporated | Shielded planar capacitor |
US20100244190A1 (en) * | 2009-03-24 | 2010-09-30 | Toshihiko Nakano | Semiconductor device and manufacturing method |
CN206835541U (zh) * | 2016-04-25 | 2018-01-02 | 莱尔德电子材料(深圳)有限公司 | 板级屏蔽件、电子装置、系统级封装模块和屏蔽模块 |
Also Published As
Publication number | Publication date |
---|---|
CN109068558B (zh) | 2019-11-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20190520 Address after: 518000 Guangdong, Shenzhen, Nanshan District, Guangdong Province, Nanshan District high tech Industrial Park, South Korea 12 road, MINDRAY Building 2 floor B area, zone 12 Applicant after: Gaoxing Wulian Technology Co.,Ltd. Address before: 518000 Guangdong, Shenzhen, Nanshan District, Guangdong Province, Nanshan District high tech Industrial Park, South Korea 12 road, MINDRAY Building 2 floor B area, zone 12 Applicant before: GOSUNCNWELINK Corp. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 518000 606, block a, sharing building, No. 78, Keyuan North Road, songpingshan community, Xili street, Nanshan District, Shenzhen, Guangdong Patentee after: Gosuncn IOT Technology Co.,Ltd. Address before: 518000 Guangdong, Shenzhen, Nanshan District, Guangdong Province, Nanshan District high tech Industrial Park, South Korea 12 road, MINDRAY Building 2 floor B area, zone 12 Patentee before: Gaoxing Wulian Technology Co.,Ltd. |