CN109065721A - A kind of organic photodetector and preparation method thereof for wide spectrum - Google Patents
A kind of organic photodetector and preparation method thereof for wide spectrum Download PDFInfo
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- CN109065721A CN109065721A CN201810739108.0A CN201810739108A CN109065721A CN 109065721 A CN109065721 A CN 109065721A CN 201810739108 A CN201810739108 A CN 201810739108A CN 109065721 A CN109065721 A CN 109065721A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
- H10K30/352—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT polymer
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
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- H—ELECTRICITY
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
A kind of organic photodetector for wide spectrum disclosed by the invention, including glass substrate, glass substrate upper surface is coated with ITO (tin indium oxide) electrode layer, and ITO electrode layer surface is from bottom to top sequentially coated with anode buffer layer, active layer, cathode buffer layer and Al electrode layer.Anode buffer layer and cathode buffer layer modify active layer, the collection of hole or electronics can be enhanced, to improve photogenerated current, and electronics or hole is stopped to reduce dark current, the specific detecivity of detector is improved, while being also avoided that in active layer that SWCNT causes higher leakage current.
Description
Technical field
The invention belongs to Electro-Optical Sensor Set technical fields, are related to a kind of organic photodetector for wide spectrum, this
Invention further relates to the preparation method of the organic photodetector for being used for wide spectrum.
Background technique
Photodetector is the device for converting optical signals into electric signal, is had extensively in military and national economy every field
General purposes.Currently, commercialized photoelectric device mainly uses inorganic material, but their production cost is high, processing technology
Complexity is unfavorable for being mass produced.In contrast, organic semiconducting materials then have processing performance it is excellent, it is low in cost, can be big
The advantages that area makes, but electron mobility is low, and stability is poor.Although the semiconductor material of simple organic or inorganic has respectively
The advantages of, but all in the presence of the deficiency of its own, to limit their application range.Organic/inorganic heterojunction semiconductor is just
It is to comply with such growth requirement, makes full use of processing performance and the efficient carrier mobility of inorganic component that organic component is excellent
The advantages of ability, can also generate some new excellent performances by compound.
The most of spectral responses of active layer of the electrooptical devices such as existing organic photodetector and solar battery
Narrow range, response range wide organic photodetector structure in part is more complicated, and preparation process requires height, and photoelectric characteristic is poor.
Summary of the invention
The object of the present invention is to provide a kind of organic photodetectors for wide spectrum of the present invention, can expand organic photoelectric
The spectral response range of detector.
It is a further object of the present invention to provide the preparation methods of the above-mentioned organic photodetector for wide spectrum, solve
There is complex process in existing preparation method.
The technical scheme adopted by the invention is that a kind of organic photodetector for wide spectrum, including glass substrate,
Glass substrate upper surface is coated with ITO (tin indium oxide) electrode layer, and ITO electrode layer surface is from bottom to top sequentially coated with anode buffer
Layer, active layer, cathode buffer layer and Al electrode layer；
The material of anode buffer layer is mixing for PEDOT (poly- 3,4- Ethylenedioxy Thiophene) and PSS (polystyrolsulfon acid)
Object is closed, the material of active layer (4) is mixture PBDTTT-F ((4,8- bis--(2- ethyl hexyl oxy)-benzos [1.2-b:4,5-b]
Dithiophene)-(4- fluoro thiophene simultaneously [3,4-b] thiophene)): P3HT (poly- 3 hexyl thiophene): PC61BM ([6,6]-phenyl-carbon 61- fourth
Sour methyl esters): SWCNT (carboxylated single-walled carbon nanotube), the material of cathode buffer layer are LiF (lithium fluoride).
The features of the present invention also characterized in that
Anode buffer layer with a thickness of 30nm~50nm, active layer with a thickness of 150nm~200nm, cathode buffer layer
With a thickness of 0.8nm~1.5nm, Al electrode layer with a thickness of 80nm~100nm.
In active layer: electron donor material PBDTTT-F, electron acceptor material PC61BM, PBDTTT-F:P3HT:
PC61The mass ratio of BM:SWCNT is 12:8:3:0~12:8:3:2.
Another technical solution of the present invention is a kind of preparation side of the organic photodetector for wide spectrum
Method, comprising the following steps:
Step 1 first plates ITO electrode layer on a glass substrate, then the glass base of ITO electrode layer is coated with using wet-cleaning
Piece, then with pure nitrogen gas drying or infrared drying；
Step 2: will through step 1, treated after glass substrate cleaned with ultraviolet ozone light, place it in nitrogen glove
In case, by sol evenning machine in ITO electrode layer surface spin coating PEDOT:PSS mixture, glass substrate is placed on 90 after spin coating
DEG C~120 DEG C of sample warm table on anneal 10min~15min, form anode buffer layer；
Step 3: first by PBDTTT-F, P3HT and PC61BM, which is dissolved in chlorobenzene, forms mixed solution, then makes mixed solution packet
It is rolled in the surface SWCNT and forms mixture, finally mixture is spin-coated on anode buffer layer, puts glass substrate after spin coating
Anneal 10min~15min on 90 DEG C~120 DEG C of sample warm table, forms active layer；
Step 4: will be first put into through the obtained glass substrate of step 3 in vacuum evaporation plating machine and be deposited LiF layers, it is slow to form cathode
Layer is rushed, then the depositing Al electrode layer on cathode buffer layer；
Step 5: 90 DEG C~120 DEG C will be heated to through the resulting glass substrate of step 4, constant temperature keeps 15min~20min,
Room temperature is reduced the temperature to later, obtains organic photodetector.
The features of the present invention also characterized in that
The process of the wet-cleaning of step 1 are as follows: first using deionized water to glass substrate carry out ultrasonic cleaning 15min~
20min then carries out ultrasonic cleaning 15min~20min to glass substrate using acetone, is finally cleaned by ultrasonic using dehydrated alcohol
15min~20min.
The technological parameter of the spin coating process of step 2 is as follows:
Spin coating rate is 3000rpm~3500rpm, and spin-coating time is 50s~70s.
The technological parameter of the spin coating process of step 3 is as follows:
Spin coating rate is 600rpm~800rpm, and spin-coating time is 50s~70s.
Anode buffer layer with a thickness of 30nm~50nm, active layer with a thickness of 150nm~200nm, cathode buffer layer
With a thickness of 0.8nm~1.5nm, Al electrode layer with a thickness of 80nm~100nm.
In active layer: electron donor material PBDTTT-F, electron acceptor material PC61BM, PBDTTT-F:P3HT:
PC61The mass ratio of BM:SWCNT is 12:8:3:0~12:8:3:2.
The beneficial effects of the present invention are:
(1) organic photodetector for wide spectrum of the invention, active layer use three-phase bulk heterojunction structure, and
It is doped with SWCNT in active layer, selects the light-sensitive material of three kinds of different absorption spectrums, using absorption spectrum complementarity principle, in turn
Expand spectral response range；
(2) organic photodetector for wide spectrum of the invention adulterates SWCNT single-walled carbon nanotube in active layer,
So that device inside forms charge transmission channel, the mobility of carrier is improved, exciton fission rate is further increased, to make to gather
It closes object structure ordering and promotes visible absorption；
(3) organic photodetector for wide spectrum of the invention, anode buffer layer and cathode buffer layer are to active layer
It is modified, the collection of hole or electronics can be enhanced, to improve photogenerated current, and electronics or hole is stopped to reduce dark electricity
Stream, improves the specific detecivity of detector, while being also avoided that in active layer that SWCNT causes higher leakage current；
(4) organic photodetector for wide spectrum of the invention is that imaging sensor is highly integrated and junior unit face
Productization provides front-end devices basis；
(5) preparation method of the organic photodetector for wide spectrum of the invention, simple process, for wanting for equipment
Ask low.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of the organic photodetector for wide spectrum of the present invention；
Fig. 2 is a kind of working principle diagram of the organic photodetector for wide spectrum of the present invention；
Fig. 3 is a kind of abosrption spectrogram of the organic photodetector for wide spectrum of the present invention；
Fig. 4 a is that a kind of current-voltage of the organic photodetector for wide spectrum of the present invention under gauge without light source irradiation is special
Linearity curve；
Fig. 4 b is a kind of I-E characteristic of the organic photodetector for wide spectrum of the present invention under blue light illumination
Curve；
Fig. 4 c is that a kind of I-E characteristic of the organic photodetector for wide spectrum of the present invention under green irradiation is bent
Line；
Fig. 4 d is a kind of I-E characteristic of the organic photodetector for wide spectrum of the present invention under red light irradiation
Curve.
In figure, 1. glass substrates, 2.ITO electrode layer, 3. anode buffer layers, 4. active layers, 5., 6.Al electrode layers.
Specific embodiment
The following describes the present invention in detail with reference to the accompanying drawings and specific embodiments.
A kind of organic photodetector for wide spectrum of the present invention, as shown in Figure 1, including glass substrate 1, glass substrate
1 upper surface is coated with ITO electrode layer 2, and 2 surface of ITO electrode layer is from bottom to top sequentially coated with anode buffer layer 3, active layer 4, yin
Pole buffer layer 5 and Al electrode layer 6；
The material of anode buffer layer 3 is the mixture of PEDOT and PSS, and the material of active layer 4 is PBDTTT-F:P3HT:
PC61The mixture of BM:SWCNT, the material of cathode buffer layer 5 are LiF.
Present invention employs the active layer 4 that tri- kinds of materials of PCBM, P3HT and PBDTTT-F are blended, the wherein suctions of PCBM material
The range for receiving spectrum is 350~400nm, and the range of the absorption spectrum of P3HT material is 400~650nm, PBDTTT-F material
The range of absorption spectrum is 630~750nm.Active layer absorption spectrum after three kinds of materials are blended is 350~750nm, almost
Visible light all wavelengths are covered, active layer spectral response range has been widened.
In active layer 4, SWCNT is dispersed in polymer P 3HT, PCBM, in PBDTTT-F blend film, and polymer wrapped
Uniform porous random network structure is formed on the surface SWCNT, wherein SWCNT includes that there is the diameter of one-dimensional high aspect ratio to be
The metal SWCNT and semi-conductor type SWCNT of 0.7~1nm；SWCNT is added in active layer 4 can accelerate exciton fission, make to polymerize
Object structure becomes orderly, promotes visible absorption, and single-walled carbon nanotube forms charge transmission channel in the devices, improves
Electrode is to charge-trapping rate, to obtain high responsiveness.
Anode buffer layer 3 with a thickness of 30nm~50nm, active layer 4 with a thickness of 150nm~200nm, cathode buffer layer 5
With a thickness of 0.8nm~1.5nm, Al electrode layer with a thickness of 80nm~100nm.
In active layer 4: electron donor material PBDTTT-F, electron acceptor material PC61BM, PBDTTT-F:P3HT:
PC61The mass ratio of BM:SWCNT is 12:8:3:0~12:8:3:2.
A kind of principle of the organic photodetector for wide spectrum of the present invention is as follows:
The organic photodetector of wide spectrum of the invention is not based on fuel factor, but is based on leading to light induced electron-sky
Cave is to the photoelectricity excitation mechanism quickly dissociated under bias.The driving of separation of charge is advocated in the body heterojunction of active layer 4
If to-minimum vacant track (LUMO) energy level difference of receptor, i.e., to the electronic barrier at-acceptor interface.Wide spectrum of the invention
Organic photodetector level structure as shown in Fig. 2, with characteristic of semiconductor SWCNT work function in 3.4~4eV, root
According to the energy band relationship between SWCNT and polymer, interface potential barrier (about 0.46eV) is greater than exciton binding energy, thus to exciton
Dissociation and charge injection are all enough, therefore device inside is capable of forming good charge transport channel.
Organic photodetector for wide spectrum of the invention, anode buffer layer 3 and cathode buffer layer 5 are to active layer 4
It is modified, the collection of hole or electronics can be enhanced, to improve photogenerated current, and electronics or hole is stopped to reduce dark electricity
Stream, improves the specific detecivity of detector, while carbon nanotube in active layer also being avoided to cause higher leakage current.Active layer simultaneously
4 overcome the strong of exciton to combine energy using body heterojunction, to drive electric charge transfer.The interfacial energy of body heterojunction be conducive to
Body and receptor self assembly to form uniform interpenetrating networks, make film be distributed everywhere in several nanometer ranges to-acceptor interface.
When mixing SWCNT, active layer can absorb the light wave of the wave band of 550~750nm, and highest wave crest is located at about in this wave band
680nm, secondary peak are located at about 530nm, wherein having stronger absorptivity to feux rouges, as shown in Figure 3.
A kind of preparation method of the organic photodetector for wide spectrum of the present invention, specifically includes the following steps:
Step 1 first plates ITO electrode layer 2 in glass substrate 1, then the glass base of ITO electrode layer is coated with using wet-cleaning
Piece 1, then with pure nitrogen gas drying or infrared drying；
The process of wet-cleaning are as follows: ultrasonic cleaning 15min~20min is first carried out to glass substrate 1 using deionized water, is connect
Ultrasonic cleaning 15min~20min is carried out to glass substrate 2 using acetone, finally using dehydrated alcohol ultrasonic cleaning 15min~
20min。
Step 2: will through step 1, treated after glass substrate 1 cleaned with ultraviolet ozone light, place it in nitrogen glove
In case, by sol evenning machine in 2 surface spin coating PEDOT:PSS mixture of ITO electrode layer, spin coating rate be 3000rpm~
3500rpm, spin-coating time are 50s~70s；Glass substrate 1 is placed on 90 DEG C~120 DEG C of sample warm table after spin coating
Anneal 10min~15min, forms the anode buffer layer 3 with a thickness of 30nm~50nm；
Step 3: first by PBDTTT-F, P3HT and PC61BM, which is dissolved in chlorobenzene, forms mixed solution, then makes mixed solution packet
Be rolled in the surface SWCNT formed mixture, finally mixture is spin-coated on anode buffer layer 3, spin coating rate be 600rpm~
800rpm, spin-coating time are 50s~70s, and glass substrate 1 is placed on 90 DEG C~120 DEG C of sample warm table after spin coating
Anneal 10min~15min, forms the active layer 4 with a thickness of 150nm~200nm；
Wherein, PBDTTT-F is as electron donor material, PC61BM is as electron acceptor material, PBDTTT-F:P3HT:
PC61The mass ratio of BM:SWCNT is 12:8:3:0~12:8:3:2；
Step 4: will be first put into through the obtained glass substrate 1 of step 3 in vacuum evaporation plating machine and be deposited LiF layers, and form thickness
For the cathode buffer layer 5 of 0.8nm~1.5nm, the then depositing Al electrode layer 6 on cathode buffer layer 5, Al electrode layer with a thickness of
80nm~100nm.
Step 5: 90 DEG C~120 DEG C will be heated to through the resulting glass substrate 1 of step 4, constant temperature keeps 15min~20min,
Room temperature is reduced the temperature to later, obtains organic photodetector.
Organic photodetector for wide spectrum of the invention, active layer use three-phase bulk heterojunction structure, and in work
Property layer in be doped with SWCNT, select the light-sensitive material of three kinds of different absorption spectrums, utilize absorption spectrum complementarity principle, Jin Erkuo
Big spectral response range；Organic photodetector for wide spectrum of the invention adulterates SWCNT single in active layer
Pipe improves the mobility of carrier, further increases exciton fission rate so that device inside forms charge transmission channel, thus
Make polymer architecture ordering and promotes visible absorption；Organic photodetector for wide spectrum of the invention, anode are slow
It rushes layer and cathode buffer layer modifies active layer, the collection of hole or electronics can be enhanced, so that photogenerated current is improved, and
And electronics or hole is stopped to reduce dark current, the specific detecivity of detector is improved, while being also avoided that SWCNT is caused in active layer
Higher leakage current.
Embodiment 1
Step 1 first plates ITO electrode layer 2 in glass substrate 1, then the glass base of ITO electrode layer is coated with using wet-cleaning
Piece 1, then with pure nitrogen gas drying or infrared drying；
The process of wet-cleaning are as follows: ultrasonic cleaning 15min is first carried out to glass substrate 1 using deionized water, is then used
Acetone carries out ultrasonic cleaning 15min to glass substrate 2, is finally cleaned by ultrasonic 15min using dehydrated alcohol.
Step 2: will through step 1, treated after glass substrate 1 cleaned with ultraviolet ozone light, place it in nitrogen glove
In case, by sol evenning machine in 2 surface spin coating PEDOT:PSS mixture of ITO electrode layer, spin coating rate is 3000rpm, spin-coating time
For 60s；Glass substrate 1 is placed on 120 DEG C of sample warm table to the 15min that anneals after spin coating, is formed with a thickness of 30nm's
Anode buffer layer 3；
Step 3: first by PBDTTT-F, P3HT and PC61BM, which is dissolved in chlorobenzene, forms mixed solution, then makes mixed solution packet
It is rolled in the surface SWCNT and forms mixture, finally mixture is spin-coated on anode buffer layer 3, spin coating rate is 800rpm, spin coating
Time is 60s, and glass substrate 1 is placed on 120 DEG C of sample warm table to the 15min that anneals after spin coating, formed with a thickness of
The active layer 4 of 200nm；
Wherein, PBDTTT-F is as electron donor material, PC61BM is as electron acceptor material, PBDTTT-F:P3HT:
PC61The mass ratio of BM:SWCNT is 12:8:3:1；
Step 4: will be first put into through the obtained glass substrate 1 of step 3 in vacuum evaporation plating machine and be deposited LiF layers, and form thickness
For the cathode buffer layer 5 of 1nm, the then depositing Al electrode layer 6 on cathode buffer layer 5, Al electrode layer with a thickness of 100nm.
Step 5: 120 DEG C will be heated to through the resulting glass substrate 1 of step 4, constant temperature keeps 15min~20min, later will
Temperature drops to room temperature, obtains organic photodetector.
Embodiment 2
Step 1: first plating ITO electrode layer 2 in glass substrate 1, then be coated with the glass base of ITO electrode layer using wet-cleaning
Piece 1, then with pure nitrogen gas drying or infrared drying；
The process of wet-cleaning are as follows: ultrasonic cleaning 15min is first carried out to glass substrate 1 using deionized water, is then used
Acetone carries out ultrasonic cleaning 15min to glass substrate 2, is finally cleaned by ultrasonic 15min using dehydrated alcohol.
Step 2: will through step 1, treated after glass substrate 1 cleaned with ultraviolet ozone light, place it in nitrogen glove
In case, by sol evenning machine in 2 surface spin coating PEDOT:PSS mixture of ITO electrode layer, spin coating rate is 3200rpm, spin-coating time
For 60s；Glass substrate 1 is placed on 120 DEG C of sample warm table to the 15min that anneals after spin coating, is formed with a thickness of 35nm's
Anode buffer layer 3；
Step 3: first by PBDTTT-F, P3HT and PC61BM, which is dissolved in chlorobenzene, forms mixed solution, then makes mixed solution packet
It is rolled in the surface SWCNT and forms mixture, finally mixture is spin-coated on anode buffer layer 3, spin coating rate is 600rpm, spin coating
Time is 50s, and glass substrate 1 is placed on 120 DEG C of sample warm table to the 15min that anneals after spin coating, formed with a thickness of
The active layer 4 of 150nm；
Wherein, PBDTTT-F is as electron donor material, PC61BM is as electron acceptor material, PBDTTT-F:P3HT:
PC61The mass ratio of BM:SWCNT is 12:8:3:1；
Step 4: will be first put into through the obtained glass substrate 1 of step 3 in vacuum evaporation plating machine and be deposited LiF layers, and form thickness
For the cathode buffer layer 5 of 1nm, the then depositing Al electrode layer 6 on cathode buffer layer 5, Al electrode layer with a thickness of 100nm.
Step 5: 120 DEG C will be heated to through the resulting glass substrate 1 of step 4, constant temperature keeps 15min~20min, later will
Temperature drops to room temperature, obtains organic photodetector.
Embodiment 3
Step 1: first plating ITO electrode layer 2 in glass substrate 1, then be coated with the glass base of ITO electrode layer using wet-cleaning
Piece 1, then with pure nitrogen gas drying or infrared drying；
The process of wet-cleaning are as follows: ultrasonic cleaning 15min is first carried out to glass substrate 1 using deionized water, is then used
Acetone carries out ultrasonic cleaning 15min to glass substrate 2, is finally cleaned by ultrasonic 15min using dehydrated alcohol.
Step 2: will through step 1, treated after glass substrate 1 cleaned with ultraviolet ozone light, place it in nitrogen glove
In case, by sol evenning machine in 2 surface spin coating PEDOT:PSS mixture of ITO electrode layer, spin coating rate is 3000rpm, spin-coating time
For 60s；Glass substrate 1 is placed on 120 DEG C of sample warm table to the 15min that anneals after spin coating, is formed with a thickness of 30nm's
Anode buffer layer 3；
Step 3: first by PBDTTT-F, P3HT and PC61BM, which is dissolved in chlorobenzene, forms mixed solution, then makes mixed solution packet
It is rolled in the surface SWCNT and forms mixture, finally mixture is spin-coated on anode buffer layer 3, spin coating rate is 700rpm, spin coating
Time is 60s, and glass substrate 1 is placed on 120 DEG C of sample warm table to the 15min that anneals after spin coating, formed with a thickness of
The active layer 4 of 170nm；
Wherein, PBDTTT-F is as electron donor material, PC61BM is as electron acceptor material, PBDTTT-F:P3HT:
PC61The mass ratio of BM:SWCNT is 12:8:3:1；
Step 4: will be first put into through the obtained glass substrate 1 of step 3 in vacuum evaporation plating machine and be deposited LiF layers, and form thickness
For the cathode buffer layer 5 of 1nm, the then depositing Al electrode layer 6 on cathode buffer layer 5, Al electrode layer with a thickness of 100nm.
Step 5: 120 DEG C will be heated to through the resulting glass substrate 1 of step 4, constant temperature keeps 15min~20min, later will
Temperature drops to room temperature, obtains organic photodetector.
Embodiment 4
Step 1: first plating ITO electrode layer 2 in glass substrate 1, then be coated with the glass base of ITO electrode layer using wet-cleaning
Piece 1, then with pure nitrogen gas drying or infrared drying；
The process of wet-cleaning are as follows: ultrasonic cleaning 15min is first carried out to glass substrate 1 using deionized water, is then used
Acetone carries out ultrasonic cleaning 15min to glass substrate 2, is finally cleaned by ultrasonic 15min using dehydrated alcohol.
Step 2: will through step 1, treated after glass substrate 1 cleaned with ultraviolet ozone light, place it in nitrogen glove
In case, by sol evenning machine in 2 surface spin coating PEDOT:PSS mixture of ITO electrode layer, spin coating rate is 3000rpm, spin-coating time
For 60s；Glass substrate 1 is placed on 120 DEG C of sample warm table to the 15min that anneals after spin coating, is formed with a thickness of 30nm's
Anode buffer layer 3；
Step 3: first by PBDTTT-F, P3HT and PC61BM, which is dissolved in chlorobenzene, forms mixed solution, then makes mixed solution packet
It is rolled in the surface SWCNT and forms mixture, finally mixture is spin-coated on anode buffer layer 3, spin coating rate is 800rpm, spin coating
Time is 60s, and glass substrate 1 is placed on 120 DEG C of sample warm table to the 15min that anneals after spin coating, formed with a thickness of
The active layer 4 of 200nm；
Wherein, PBDTTT-F is as electron donor material, PC61BM is as electron acceptor material, PBDTTT-F:P3HT:
PC61The mass ratio of BM:SWCNT is 12:8:3:1；
Step 4: will be first put into through the obtained glass substrate 1 of step 3 in vacuum evaporation plating machine and be deposited LiF layers, and form thickness
For the cathode buffer layer 5 of 0.8nm, the then depositing Al electrode layer 6 on cathode buffer layer 5, Al electrode layer with a thickness of 90nm.
Step 5: 90 DEG C will be heated to through the resulting glass substrate 1 of step 4, constant temperature keeps 15min~20min, later will
Temperature drops to room temperature, obtains organic photodetector.
Example 5
Step 1: first plating ITO electrode layer 2 in glass substrate 1, then be coated with the glass base of ITO electrode layer using wet-cleaning
Piece 1, then with pure nitrogen gas drying or infrared drying；
The process of wet-cleaning are as follows: ultrasonic cleaning 15min is first carried out to glass substrate 1 using deionized water, is then used
Acetone carries out ultrasonic cleaning 15min to glass substrate 2, is finally cleaned by ultrasonic 15min using dehydrated alcohol.
Step 2: will through step 1, treated after glass substrate 1 cleaned with ultraviolet ozone light, place it in nitrogen glove
In case, by sol evenning machine in 2 surface spin coating PEDOT:PSS mixture of ITO electrode layer, spin coating rate is 3500rpm, spin-coating time
For 60s；Glass substrate 1 is placed on 120 DEG C of sample warm table to the 15min that anneals after spin coating, is formed with a thickness of 40nm's
Anode buffer layer 3；
Step 3: first by PBDTTT-F, P3HT and PC61BM, which is dissolved in chlorobenzene, forms mixed solution, then makes mixed solution packet
It is rolled in the surface SWCNT and forms mixture, finally mixture is spin-coated on anode buffer layer 3, spin coating rate is 650rpm, spin coating
Time is 60s, and glass substrate 1 is placed on 120 DEG C of sample warm table to the 15min that anneals after spin coating, formed with a thickness of
The active layer 4 of 165nm；
Wherein, PBDTTT-F is as electron donor material, PC61BM is as electron acceptor material, PBDTTT-F:P3HT:
PC61The mass ratio of BM:SWCNT is 12:8:3:2；
Step 4: will be first put into through the obtained glass substrate 1 of step 3 in vacuum evaporation plating machine and be deposited LiF layers, and form thickness
For the cathode buffer layer 5 of 1nm, the then depositing Al electrode layer 6 on cathode buffer layer 5, Al electrode layer with a thickness of 100nm.
Step 5: 120 DEG C will be heated to through the resulting glass substrate 1 of step 4, constant temperature keeps 15min~20min, later will
Temperature drops to room temperature, obtains organic photodetector.
The organic photodetector obtained by embodiment is tested, testing light source are as follows:
Green light LED lamp, wavelength 530nm, optical power 2.56mW/cm2；
Red LED lamp, wavelength 630nm, optical power 0.97mW/cm2；
Blue LED lamp, wavelength 460nm, optical power 5.54mW/cm2。
It is -1V in applying bias voltage, in various light sources, test result is as follows:
Embodiment 1 irradiates the test result of display current -voltage curve as shown in Fig. 4 a~Fig. 4 d under different light sources, visits
The dark current density for surveying device is 10-6A/cm2, to wavelength be 630nm feux rouges, wavelength be 460nm blue light and wavelength be
The green light of 530nm, average specific detecivity reach 3.4 × 1011~6.5 × 1011Jones or more, consistency are good.
Claims (9)
1. a kind of organic photodetector for wide spectrum, which is characterized in that including glass substrate (1), the glass substrate
(1) upper surface is coated with ITO electrode layer (2), and ITO electrode layer (2) surface is from bottom to top sequentially coated with anode buffer layer
(3), active layer (4), cathode buffer layer (5) and Al electrode layer (6)；
The material of the anode buffer layer (3) is the mixture of PEDOT and PSS, and the material of the active layer (4) is mixture
PBDTTT-F:P3HT:PC61BM:SWCNT, the material of the cathode buffer layer (5) are LiF.
2. a kind of organic photodetector for wide spectrum as described in claim 1, which is characterized in that the anode buffer
Layer (3) with a thickness of 30nm~50nm, the active layer (4) with a thickness of 150nm~200nm, the cathode buffer layer (5)
With a thickness of 0.8nm~1.5nm, the Al electrode layer with a thickness of 80nm~100nm.
3. a kind of organic photodetector for wide spectrum as described in claim 1, which is characterized in that the active layer
(4) in: electron donor material PBDTTT-F, electron acceptor material PC61BM, PBDTTT-F:P3HT:PC61BM:SWCNT's
Mass ratio is 12:8:3:0~12:8:3:2.
4. a kind of preparation method of the organic photodetector for wide spectrum as described in claim 1, which is characterized in that packet
Include following steps:
Step 1 is first plated ITO electrode layer (2) on glass substrate (1), then is coated with the glass base of ITO electrode layer using wet-cleaning
Piece (1), then with pure nitrogen gas drying or infrared drying；
Step 2: will through step 1, treated after glass substrate (1) cleaned with ultraviolet ozone light, place it in nitrogen glove box
In, by sol evenning machine in ITO electrode layer (2) surface spin coating PEDOT:PSS mixture, glass substrate (1) is put after spin coating
Anneal 10min~15min on 90 DEG C~120 DEG C of sample warm table, is formed anode buffer layer (3)；
Step 3: first by PBDTTT-F, P3HT and PC61BM, which is dissolved in chlorobenzene, forms mixed solution, is then wrapped in mixed solution
The surface SWCNT forms mixture, finally mixture is spin-coated on the anode buffer layer (3), by glass base after spin coating
Piece (1) is placed on annealing 10min~15min on 90 DEG C~120 DEG C of sample warm table, is formed active layer (4)；
Step 4: will be first put into through the obtained glass substrate of step 3 (1) in vacuum evaporation plating machine and be deposited LiF layers, it is slow to form cathode
Layer (5) are rushed, then the depositing Al electrode layer (6) on cathode buffer layer (5)；
Step 5: 90 DEG C~120 DEG C will be heated to through the resulting glass substrate of step 4 (1), constant temperature keeps 15min~20min, it
After reduce the temperature to room temperature, obtain organic photodetector.
5. a kind of preparation method of the organic photodetector for wide spectrum as described in claim 1, which is characterized in that step
The process of wet-cleaning described in rapid 1 are as follows: first using deionized water to glass substrate (1) carry out ultrasonic cleaning 15min~
20min then carries out ultrasonic cleaning 15min~20min to glass substrate (2) using acetone, finally using dehydrated alcohol ultrasound
Clean 15min~20min.
6. a kind of preparation method of the organic photodetector for wide spectrum as described in claim 1, which is characterized in that step
The technological parameter of spin coating process described in rapid 2 is as follows:
Spin coating rate is 3000rpm~3500rpm, and spin-coating time is 50s~70s.
7. a kind of preparation method of the organic photodetector for wide spectrum as described in claim 1, which is characterized in that step
The technological parameter of spin coating process described in rapid 3 is as follows:
Spin coating rate is 600rpm~800rpm, and spin-coating time is 50s~70s.
8. a kind of preparation method of the organic photodetector for wide spectrum as described in claim 1, which is characterized in that institute
State anode buffer layer (3) with a thickness of 30nm~50nm, the active layer (4) with a thickness of 150nm~200nm, the cathode
Buffer layer (5) with a thickness of 0.8nm~1.5nm, the Al electrode layer with a thickness of 80nm~100nm.
9. a kind of organic photodetector for wide spectrum as described in claim 1, which is characterized in that the active layer
(4) in: electron donor material PBDTTT-F, electron acceptor material PC61BM, PBDTTT-F:P3HT:PC61BM:SWCNT's
Mass ratio is 12:8:3:0~12:8:3:2.
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