CN109065716A - A kind of nerve synapse device and preparation method thereof based on a-TSC:O ceramic membrane - Google Patents
A kind of nerve synapse device and preparation method thereof based on a-TSC:O ceramic membrane Download PDFInfo
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- 210000000225 synapse Anatomy 0.000 title claims abstract description 43
- 239000000919 ceramic Substances 0.000 title claims abstract description 39
- 239000012528 membrane Substances 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 230000008859 change Effects 0.000 claims abstract description 46
- 230000003647 oxidation Effects 0.000 claims abstract description 16
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 47
- 238000004544 sputter deposition Methods 0.000 claims description 29
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 238000005240 physical vapour deposition Methods 0.000 claims description 15
- 238000005546 reactive sputtering Methods 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
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- 239000010409 thin film Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000007772 electrode material Substances 0.000 abstract description 4
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
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- 229910009817 Ti3SiC2 Inorganic materials 0.000 description 17
- 239000007789 gas Substances 0.000 description 13
- -1 oxonium ion Chemical class 0.000 description 9
- 229910010293 ceramic material Inorganic materials 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000005086 pumping Methods 0.000 description 5
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- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
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Abstract
A kind of nerve synapse device and preparation method thereof based on a-TSC:O ceramic membrane, belongs to photoelectric device technical field.For the present invention on the basis of traditional memristor switching device structure, innovation proposes the dielectric layer structure of " the a-TSC:O film of high oxidation/protoxydic a-TSC:O film ", has widened the range of choice of nerve synapse device medium layer material.Since the change resistance performance of a-TSC:O film is adjustable on a large scale, and good and transparent with the near infrared band characteristic of the electric conductivity of intrinsic a-TSC ceramic membrane, therefore a-TSC:O film is not only made to have good change resistance performance, it can be used as the dielectric layer of nerve synapse device, also, the top electrode that intrinsic a-TSC ceramic membrane is formed as top electrode material and transparent conductive film can be constructed near-infrared all-transparent nerve synapse device jointly.Further it is proposed that the preparation process of nerve synapse device is simple, low in cost, high reliablity, it is advantageously implemented large-scale production.
Description
Technical field
The invention belongs to photoelectric device technical fields, and in particular to a kind of nerve synapse based on a-TSC:O ceramic membrane
Device and preparation method thereof.
Background technique
In recent years, new lover of the memristor as next-generation memory technology, and mould is emulated in intelligent device and nerve synapse
In quasi- research field, memristor also relies on its novel characteristic to cause the attention of researcher.It was discovered by researchers that according to recalling
The theoretical model of device is hindered, resistance value can change with voltage is applied, and can remember the state changed, memristor institute
The unique nonlinear transmission characteristic having, behavior and principle with nerve synapse in biological brain have very high similitude.
And this similitude makes memristor be highly suitable as the bionical device of nerve synapse, and is used for construction neuromorphic core
Piece, and then it is used for artificial neural network.In traditional neuromorphic chip, transistor is the substantially single of the bionical cynapse of construction
Member.It is not only bulky, energy consumption is high, learning ability is poor however, the bionical cynapse device based on transistor, but also formed new
Weight has to rebuild circuit.In contrast, memristor is a kind of more outstanding bionical cynapse device.Because of memristor
As bionical cynapse device, not only small in size, low in energy consumption, recyclable number is high, but also its working condition (resistance value after excitation)
Energy is not needed to maintain and (have self-maintaining), it is even more important that its resistance value has continuous adjustability.
Ti3SiC2It is a kind of ternary layered carbide, is the MAX phase material of the uniquely element containing Si, while there are ceramics and gold
The performance of category can be referred to as TSC ceramic material.Ti3SiC2Belong to ceramic material on compound structure, embodies ceramic material
The characteristics of expecting high-melting-point, high-yield strength and good anti-oxidant, corrosion resistance and thermal shock resistance.Meanwhile Ti3SiC2Chemical combination
Object in electricity, calorifics and mechanical property again as metal material, have high thermal conductivity and conductivity, higher modulus of shearing and
Elasticity modulus, lower hardness, good machining property, and there is certain plasticity at high temperature.Further, since Ti3SiC2
Special layer structure, so that the material has good self-lubricating property and damage tolerance.
Based on the prior art to Ti3SiC2Performance study, and because of Ti3SiC2Have both the Optimality of metal and ceramics
Can, in addition its good processable type, there is very tempting application prospect in fields such as automobile, chemical industry, national defense industry.
Ti3SiC2Conductivity it is big, two orders of magnitude about bigger than the conductivity of graphite, while having ultralow abrasiveness, friction factor compares stone
The friction factor of ink is lower, and has good self-lubricating property, therefore is expected to that graphite is replaced to make alternating current generator of new generation
Brush.Ti3SiC2With good corrosion resistance, inoxidizability, ultra-low friction and self-lubricating property, metal may be used as
The electrode material of melting.Ti3SiC2Elevated temperature strength, inoxidizability and thermal shock resistance be better than Si3N4, can be used as aero-engine
Turbo blade and stator ideal material.Ti3SiC2Density be about the general of current Ni based high-temperature alloy density, and it is strong
Degree is but their 2 times, and still has extraordinary mechanical property under 1400 DEG C of high temperature, and be easier to machining,
Therefore it would be possible to replace high temperature alloy best on Vehicles Collected from Market.Ti3SiC2Good workability and self-lubrication, make it
Traditional processable ceramic can be substituted.Ti3SiC2It is easy to silication and carbonization, silication can be such that its surface hardness reaches
12GPa, the performance of material can be improved up to 25GPa, this surface treatment in carbonization, and operates and be easy, and processing cost is low.It is comprehensive
Above content is it is found that existing for Ti3SiC2The development of application, research be concentrated mainly on high-temperature structural material, electrode material, can
Processing ceramic material, friction reducing members material and anticorrosive protective layer have no it in the research report of photoelectric field application.
Summary of the invention
The object of the present invention is to provide a kind of nerve synapse device and preparation method thereof based on TSC ceramic membrane.This
It finds to innovation that the amorphous TSC ceramic membrane (a-TSC:O) of oxidation has good change resistance performance, and is further discovered that amorphous
TSC ceramic membrane (a-TSC) has near-infrared all-transparent characteristic, and building obtains a kind of with the transparent spy of near-infrared on this basis
The nerve synapse device of property.
To achieve the goals above, the technical scheme is that
The present invention provides a kind of nerve synapse device based on a-TSC:O ceramic membrane, and the nerve synapse device is under
And upper is " hearth electrode/the first change resistance layer/second change resistance layer/top electrode " vertical four-layer structure, it is characterised in that: the first change resistance layer
It is the amorphous TSC film of oxidation with the second change resistance layer, and high as the oxygen content in the amorphous TSC film of the first change resistance layer
Oxygen content in the amorphous TSC film as the second change resistance layer, the hearth electrode are ito thin film.
Further, the material of top electrode is selected from intrinsic amorphous TSC, tungsten (W) or metallic gold (Au) in the present invention, is
Make nerve synapse device of the present invention that integrally there is near-infrared transparent characteristic, the material of top electrode is preferably amorphous TSC.
On the basis of above scheme, the range of near infrared band is 800nm~1200nm.
Further, the present invention in top electrode thickness 50nm~200nm.
Further, the present invention in hearth electrode thickness 100nm~200nm.
Further, the first change resistance layer is the film for using reactive sputtering to be prepared based on PVD system in the present invention,
With a thickness of 30nm~150nm.
Further, the second change resistance layer is the film for using reactive sputtering to be prepared based on PVD system in the present invention,
With a thickness of 50nm~300nm.
The present invention provides a kind of preparation method of nerve synapse device based on a-TSC:O ceramic membrane, which is characterized in that
Include the following steps:
Step A: prepare clean, dry ITO slide；
Step B: utilizing DC reactive sputtering or radio frequency reactive sputtering, deposits oxygen in the upper surface of the ITO slide
The amorphous TSC ceramic membrane of change is as the first change resistance layer；
Step C: utilizing DC reactive sputtering or radio frequency reactive sputtering, deposits in the upper surface of first change resistance layer
The amorphous TSC ceramic membrane of oxidation is as the second change resistance layer, and the oxygen of the amorphous TSC ceramic membrane of the obtained oxidation of this step contains
Amount is less than the oxygen content that the amorphous TSC ceramic membrane of oxidation is made in step B；
Step D: top electrode is deposited in the upper surface of the second change resistance layer.
Further, in step A of the present invention in ITO slide ito thin film thickness 100nm~200nm.
Further, the parameter of d.c. sputtering film-forming process is as follows in step B and C of the present invention: current margin is
0.20~0.35A, operating voltage range be 360~475V, ar pressure be 1.5Pa~5Pa, argon flow be 25~
50sccm；The parameter of radio-frequency sputtering film-forming process is as follows: RF source power be 40W~200W, ar pressure be 0.5Pa~
2.5Pa, argon flow be 20sccm~40sccm, 25 DEG C~200 DEG C of substrate heating temperature.Make the by controlling sputtering time
One change resistance layer with a thickness of 30nm~150nm, the second change resistance layer with a thickness of 50nm~300nm.
Further, the material of top electrode is selected from amorphous TSC, tungsten (W) or metallic gold (Au) in step D of the present invention.
Further, top electrode can be prepared using d.c. sputtering or magnetron sputtering in step D of the present invention, can also be used
Any suitable thin film-forming method preparation；Thickness 50nm~200nm of top electrode.
Amorphous TSC (a-TSC:O) ceramic material that nerve synapse device of the invention is built upon oxidation has good
Change resistance performance, i.e., by the degree of oxidation of control a-TSC:O, it can be achieved that continuously adjustable, and the base of a-TSC:O film resistor performance
In the a-TSC:O ceramic membrane that this uses degree of oxidation different collectively as double change resistance layers of nerve synapse device.Present invention tool
Body running principle is: when applying forward voltage between device top electrode and hearth electrode (electrical modulation), as the second change resistance layer
A-TSC:O film in oxonium ion can be migrated in electric field action, or even be moved to the a-TSC:O as the first change resistance layer
In film, so that the distribution of oxonium ion recombinates in device change layer；It is reversed when applying between device top electrode and hearth electrode
When voltage (electrical modulation), has moved and returned in the first change resistance layer under electric field action to the oxonium ion in the second change resistance layer, equally
It the distribution of oxonium ion can recombinate again in device change resistance layer, to realize the non-linear consecutive variations of resistance.Based on above-mentioned
Principle, the present invention construct to obtain ITO slide, " high oxidation a-TSC:O film/suboxides a-TSC:O film " double change resistance layers and top
The nerve synapse device that electrode is constituted, further, the present invention is based on intrinsic a-TSC ceramic membranes to have near-infrared all-transparent special
Property, using a-TSC ceramic membrane as top electrode, for ITO slide as conductive transparent substrate, thus can construct to obtain has entirety
The nerve synapse device of near-infrared all-transparent characteristic.
Compared with prior art, the beneficial effects of the present invention are:
For the present invention on the basis of traditional neural cynapse device architecture, innovation proposes the medium based on a-TSC ceramic material
Layer structure (i.e. change resistance layer), has widened the range of choice of nerve synapse device medium layer material.Due to the resistive of a-TSC:O film
Performance is adjusted on a large scale, while good and transparent with the near infrared band characteristic of electric conductivity of intrinsic a-TSC ceramic membrane,
Therefore not only make a-TSC:O film have good change resistance performance and " reading of electrical modulation electricity " advantage, can be used as neural process
The dielectric layer of tentaculum part, and the top that intrinsic a-TSC ceramic membrane can be formed as top electrode material and transparent conductive film
Electrode constructs near-infrared all-transparent nerve synapse device jointly.Further it is proposed that the preparation process letter of nerve synapse device
Single, low in cost, high reliablity is advantageously implemented large-scale production.
Detailed description of the invention
Fig. 1 is the structural schematic diagram for the nerve synapse device that the specific embodiment of the invention provides, and 1 is ITO slide in figure, 2
It is suboxides a-TSC:O film for high oxidation a-TSC:O film, 3,4 be a-TSC film.
Fig. 2 is the test result figure for the nerve synapse device that the specific embodiment of the invention provides.
Fig. 3 is transmitance-wavelength of a-TSC ceramic membrane in the nerve synapse device of specific embodiment of the invention offer
Figure.
Specific embodiment
In order to enable the object, technical solutions and advantages of the present invention are more clearly understood with reference to specific embodiments simultaneously
Referring to attached drawing, the present invention is described in detail:
Embodiment:
A kind of nerve synapse device is present embodiments provided, as shown in Figure 1, its structure is followed successively by " ITO slide from bottom to top
1, high oxidation a-TSC:O film 2, suboxides a-TSC:O film 3, the vertical four-layer structure of a-TSC film 4 ", " high oxidation/hypoxemia
Change 3 " double-layer structure of a-TSC:O film as double resistance layers (i.e. the dielectric layer of nerve synapse device).
Present embodiments provide the preparation method of above-mentioned nerve synapse device, preparation process the following steps are included:
Step A: prepare ITO slide 1 as the transparent substrate with hearth electrode, and cleaned and dried by standard technology
Processing；
Step B: Ti is used3SiC2Polycrystal powder as raw material target, oxygen and argon gas as working gas, wherein oxygen argon
Than being 4: 75, a-TSC:O film 2 is deposited on ITO slide 1 as the first change resistance layer, concrete operations by reacting radio-frequency sputtering
It is as follows:
B1: target preparation:
By Ti3SiC2Powder is add to deionized water, and is stirred evenly, and Ti is obtained3SiC2Dispersion liquid, then by Ti3SiC2
Dispersion liquid is put into diameter 90mm, with a thickness of in the aluminium pallet of 3~4mm, then aluminium pallet is placed in 120 DEG C of vacuum ovens and is dried
It takes out within 24 hours, d.c. sputtering target is made based on aforesaid operations, target should vacuumize sealing when not in use and place；
B2: dress sample:
The cavity of PVD system is opened, target and substrate obtained will be handled through step 1 and 2 and is put into vacuum sputtering coating and sets
In standby；
B3: it vacuumizes, sputter:
The cavity of PVD system is closed, automatic vacuum reaches 5.5 × 10-4Pa closes pumping speed valve, sets argon gas stream
25sccm, electric current 0.3A are measured, target build-up of luminance after pre-sputtering, is sputtered, thin to control a-TSC by adjusting sputtering time
The thickness of film, the present embodiment sputtering time are 3 minutes, obtain the a-TSC:O film with a thickness of 70nm；
Step C: Ti is used3SiC2Polycrystal powder as raw material target, oxygen and argon gas as working gas, wherein oxygen argon
Than for 1:75, a-TSC:O film 3 deposit on a-TSC:O film 2 by reacting radio-frequency sputtering and is used as the second change resistance layer, this is walked
The oxygen content of a-TSC:O film is made lower than step B for the oxygen content of rapid obtained a-TSC:O film, and concrete operations are as follows:
C1: target preparation:
Select Ti made from step B13SiC2Target, opens the cavity of PVD system, and target and substrate are put into vacuum sputtering
In filming equipment；
C2: dress sample:
The cavity for opening PVD system, target and substrate are put into vacuum sputtering coating equipment；
C3: it vacuumizes, sputter:
The cavity of PVD system is closed, automatic vacuum reaches 5.5 × 10-4Pa closes pumping speed valve, sets argon gas stream
25sccm, electric current 0.3A are measured, target build-up of luminance after pre-sputtering, is sputtered, thin to control a-TSC by adjusting sputtering time
The thickness of film, the present embodiment sputtering time are 4 minutes, obtain the a-TSC:O film with a thickness of 100nm；
Step D: Ti is used3SiC2Polycrystal powder is existed as working gas by radio-frequency sputtering as raw material target, argon gas
Deposition intrinsic a-TSC film 4 is used as top electrode on a-TSC:O film 3, and concrete operations are as follows:
D1: target preparation:
Select Ti made from step B13SiC2Target, opens the cavity of PVD system, and target and substrate are put into vacuum sputtering
In filming equipment；
D2: dress sample:
The cavity for opening PVD system, target and substrate are put into vacuum sputtering coating equipment；
D3: it vacuumizes, sputter:
Pvd chamber body is closed, automatic vacuum reaches 5.5 × 10-4Pa closes pumping speed valve, sets argon gas flow
20sccm, electric current 0.3A, target build-up of luminance after pre-sputtering, are sputtered, and control a-TSC film by adjusting sputtering time
Thickness, the present embodiment sputtering time be 6 minutes.
When carrying out the operation of a-TSC film preparation, select quartz substrate and K9 glass substrate in same process under the conditions of system
Standby a-TSC film, and the transmitance for the a-TSC film being prepared based on quartz substrate and K9 glass substrate is tested, test knot
Fruit is as shown in Figure 3.As can be seen from Figure 3, Ti of the present invention3SiC2Ceramic membrane 800~2200nm spectral region transmitance not
Lower than 80%, there is near infrared band all-transparent characteristic.
The present embodiment carries out segmentation voltage scanning test, acquired results such as Fig. 2 institute to cynapse device obtained using 2636B
Show.It can be seen from the figure that device realizes synaptic function substantially.Nerve synapse of the present invention is elaborated below with reference to embodiment
The basic principle of device: when applying forward voltage between device top electrode and hearth electrode (electrical modulation), as the second resistive
Oxonium ion in the a-TSC:O film 3 of layer can be migrated in electric field action, or even be moved to the a- as the first change resistance layer
In TSC:O film 2, so that the distribution of oxonium ion recombinates in device change resistance layer；When between device top electrode and hearth electrode
When applying backward voltage (electrical modulation), ITO slide 1 can also provide oxonium ion, promote to have moved into a-TSC:O film 32
Oxonium ion is returned under electric field action in a-TSC:O film 3, can make the distribution of oxonium ion in device change resistance layer that weight occur again
Group, to realize the non-linear consecutive variations of resistance.
Embodiment 2:
Present embodiments provide a kind of preparation method of nerve synapse device, preparation process the following steps are included:
Step A: prepare K9 glass substrate as transparent substrate, and carry out washing and drying treatment by standard technology；Then
Deposition ito thin film is as hearth electrode on it；
Step B: Ti is used3SiC2Polycrystal powder as raw material target, oxygen and argon gas as working gas, wherein oxygen argon
Than being 4: 75, a-TSC:O film 2 is deposited on ITO slide 1 as the first change resistance layer, concrete operations by reacting radio-frequency sputtering
It is as follows:
B1: target preparation:
By Ti3SiC2Powder is add to deionized water, and is stirred evenly, and Ti is obtained3SiC2Dispersion liquid, then by Ti3SiC2
Dispersion liquid is put into diameter 90mm, with a thickness of in the aluminium pallet of 3~4mm, then aluminium pallet is placed in 120 DEG C of vacuum ovens and is dried
It takes out within 24 hours, d.c. sputtering target is made based on aforesaid operations, target should vacuumize sealing when not in use and place；
B2: dress sample:
The cavity of PVD system is opened, target and substrate obtained will be handled through step 1 and 2 and is put into vacuum sputtering coating and sets
In standby；
B3: it vacuumizes, sputter:
The cavity of PVD system is closed, automatic vacuum reaches 5.5 × 10-4Pa closes pumping speed valve, sets argon gas stream
25sccm, electric current 0.3A are measured, target build-up of luminance after pre-sputtering, is sputtered, thin to control a-TSC by adjusting sputtering time
The thickness of film, the present embodiment sputtering time are 2 minutes；
Step C: Ti is used3SiC2Polycrystal powder as raw material target, oxygen and argon gas as working gas, wherein oxygen argon
Than being 1: 75, a-TSC:O film 3 is deposited on a-TSC:O film 2 as the second change resistance layer, tool by reacting radio-frequency sputtering
Gymnastics is made as follows:
C1: target preparation:
Select Ti made from step B13SiC2Target, opens the cavity of PVD system, and target and substrate are put into vacuum sputtering
In filming equipment；
C2: dress sample:
The cavity for opening PVD system, target and substrate are put into vacuum sputtering coating equipment；
C3: it vacuumizes, sputter:
The cavity of PVD system is closed, automatic vacuum reaches 5.5 × 10-4Pa closes pumping speed valve, sets argon gas stream
25sccm, electric current 0.3A are measured, target build-up of luminance after pre-sputtering, is sputtered, thin to control a-TSC by adjusting sputtering time
The thickness of film, the present embodiment sputtering time are 5 minutes；
Step D: using Au target as raw material target, argon gas is as working gas, by radio-frequency sputtering in a-TSC:O film
For upper deposited metal Au film as top electrode, concrete operations are as follows:
The present embodiment is compared to the difference of embodiment 1, and the present embodiment is since top electrode and hearth electrode are near infrared light
Transmitance is low, and leading to device, the near infrared light transparency declines on the whole, and embodiment 1 is close red since a-TSC ceramic membrane has
Outer all-transparent characteristic, therefore using a-TSC ceramic membrane as top electrode, ITO slide can be such that device has as conductive transparent substrate
There is the specific of whole near-infrared all-transparent.Therefore, nerve synapse device of the present invention should root when being used near infrared band occasion
Suitable top electrode and hearth electrode material are selected according to actual needs.
Specific implementation of the invention is elaborated in conjunction with attached drawing above, above embodiment is only schematic
, and not restrictive, the invention is not limited to above-mentioned specific embodiments.Those of ordinary skill in the art are of the invention
Under enlightenment, makes and do not depart from all shape changeables of present inventive concept and claimed range and should all belong to guarantor of the invention
Shield.
Claims (10)
1. a kind of nerve synapse device based on a-TSC:O ceramic membrane, the nerve synapse device is " bottom electricity from bottom to top
The vertical four-layer structure in pole/the first change resistance layer/second change resistance layer/top electrode ", it is characterised in that: the first change resistance layer and the second resistive
Layer is the amorphous TSC film of oxidation, and is higher than as the oxygen content in the amorphous TSC film of the first change resistance layer and is used as second
Oxygen content in the amorphous TSC film of change resistance layer, the hearth electrode are ito thin film.
2. a kind of nerve synapse device based on a-TSC:O ceramic membrane according to claim 1, which is characterized in that institute
Stating the first change resistance layer is the film for using reactive sputtering to be prepared based on PVD system, with a thickness of 30nm~150nm.
3. a kind of nerve synapse device based on a-TSC:O ceramic membrane according to claim 1, which is characterized in that institute
Stating the second change resistance layer is the film for using reactive sputtering to be prepared based on PVD system, with a thickness of 50nm~300nm.
4. a kind of nerve synapse device based on a-TSC:O ceramic membrane according to claim 1, which is characterized in that institute
The material for stating top electrode is selected from intrinsic amorphous TSC, tungsten or metallic gold.
5. a kind of nerve synapse device based on a-TSC:O ceramic membrane according to claim 1, which is characterized in that institute
State thickness 50nm~200nm of top electrode.
6. a kind of nerve synapse device based on a-TSC:O ceramic membrane according to claim 1, which is characterized in that institute
State thickness 100nm~200nm of hearth electrode.
7. a kind of preparation method of the nerve synapse device based on a-TSC:O ceramic membrane, which is characterized in that including walking as follows
It is rapid:
Step A: prepare clean, dry ITO slide；
Step B: utilizing DC reactive sputtering or radio frequency reactive sputtering, in the upper surface deposited oxide of the ITO slide
Amorphous TSC ceramic membrane is as the first change resistance layer；
Step C: DC reactive sputtering or radio frequency reactive sputtering are utilized, in the upper surface deposited oxide of first change resistance layer
Amorphous TSC ceramic membrane as the second change resistance layer, and this step be made the amorphous TSC ceramic membrane of oxidation oxygen content it is small
The oxygen content of the amorphous TSC ceramic membrane of oxidation is made in step B；
Step D: top electrode is deposited in the upper surface of the second change resistance layer.
8. a kind of preparation method of nerve synapse device based on a-TSC:O ceramic membrane according to claim 1, special
Sign is that the parameter of d.c. sputtering film-forming process is as follows in the step B and C: current margin is 0.20~0.35A, work
Making voltage range is 360~475V, and ar pressure is 1.5Pa~5Pa, and argon flow is 25~50sccm.
9. a kind of preparation method of nerve synapse device based on a-TSC:O ceramic membrane according to claim 1, special
Sign is, the parameter of radio-frequency sputtering film-forming process is as follows in the B and C: RF source power is 40W~200W, and ar pressure is
0.5Pa~2.5Pa, argon flow be 20sccm~40sccm, 25 DEG C~200 DEG C of substrate heating temperature.
10. a kind of preparation method of nerve synapse device based on a-TSC:O ceramic membrane according to claim 1, institute
The material for stating top electrode in step D is selected from intrinsic amorphous TSC, tungsten or metallic gold, thickness 50nm~200nm of top electrode.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931346A (en) * | 2011-08-12 | 2013-02-13 | 中国科学院微电子研究所 | Memristor device and manufacturing method thereof |
| CN103715354A (en) * | 2012-10-08 | 2014-04-09 | 爱思开海力士有限公司 | Resistive memory device and memory apparatus and data processing system having the same |
| CN107579155A (en) * | 2017-09-12 | 2018-01-12 | 电子科技大学 | Light based on a Si reads nerve synapse device architecture and preparation method thereof |
| CN107611260A (en) * | 2017-09-12 | 2018-01-19 | 电子科技大学 | Based on SiOxLight read nerve synapse device architecture and preparation method thereof |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931346A (en) * | 2011-08-12 | 2013-02-13 | 中国科学院微电子研究所 | Memristor device and manufacturing method thereof |
| CN103715354A (en) * | 2012-10-08 | 2014-04-09 | 爱思开海力士有限公司 | Resistive memory device and memory apparatus and data processing system having the same |
| CN107579155A (en) * | 2017-09-12 | 2018-01-12 | 电子科技大学 | Light based on a Si reads nerve synapse device architecture and preparation method thereof |
| CN107611260A (en) * | 2017-09-12 | 2018-01-19 | 电子科技大学 | Based on SiOxLight read nerve synapse device architecture and preparation method thereof |
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