CN109065559A

CN109065559A - Semiconductor device and its manufacturing method

Info

Publication number: CN109065559A
Application number: CN201810907341.5A
Authority: CN
Inventors: 丁琦; 陈世杰; 黄晓橹
Original assignee: Huaian Imaging Device Manufacturer Corp
Current assignee: Huaian Imaging Device Manufacturer Corp
Priority date: 2018-08-10
Filing date: 2018-08-10
Publication date: 2018-12-21

Abstract

This disclosure relates to semiconductor device and its manufacturing method.Manufacturing method includes: to provide the substrate including multiple radiation sensitive areas；The first middle layer including multiple interlevel dielectric portions and the first metal grate for separating adjacent interlevel dielectric portion is formed on the substrate, each interlevel dielectric portion is corresponding at least one of multiple radiation sensitive areas；The second middle layer is formed in the first middle layer；Patterned process is to retain at least some of multiple interlevel dielectric portions as the first dielectric section and obtain the second dielectric section from the second middle layer, each second dielectric section is corresponding with each first dielectric section respectively, at least part of first metal grate is exposed and the first dielectric section and the second corresponding dielectric section form the first color-filter element；Form the metal layer of the outer surface of the first color-filter element of covering and the first metal grate；And the second metal grate of the exterior side surfaces of the first color-filter element of covering and the first metal grate is formed to metal layer patterning processing.

Description

Semiconductor device and its manufacturing method

Technical field

This disclosure relates to semiconductor field, it particularly relates to semiconductor device and its manufacturing method.

Background technique

Imaging sensor can be used for radiation (for example, light radiation, including but not limited to visible light, infrared ray, ultraviolet light Deng) sensed, to generate corresponding electric signal (imaging).Imaging sensor be currently widely used in digital camera, In security facility or other imaging devices.

For imaging sensor, image quality is important performance indicator.Radiation between radiation sensitive unit When crosstalk is larger, image quality will affect.

Therefore there is the demand for new technology.

Summary of the invention

The first purpose of the disclosure is to provide a kind of novel semiconductor device and its manufacturing method particularly is related to changing The image quality of kind imaging sensor.

According to one aspect of the disclosure, a kind of method for manufacturing semiconductor device is provided, this method comprises: providing lining Bottom, substrate include multiple radiation sensitive areas；The first middle layer is formed on the substrate, the first middle layer includes multiple interlevel dielectric portions With the first metal grate for separating adjacent interlevel dielectric portion, wherein in each interlevel dielectric portion and multiple radiation sensitive areas At least one radiation sensitive area is corresponding；The second middle layer is formed in the first middle layer；To in multiple interlevel dielectric portions and second Interbed carries out patterned process, to retain interlevel dielectric portion of at least some of multiple interlevel dielectric portions as the first dielectric section simultaneously And the second dielectric section is obtained from the second middle layer, wherein each second dielectric section is corresponding with each first dielectric section respectively, first At least part of metal grate is exposed and the first dielectric section and the second corresponding dielectric section form the first colour filter member Part；Metal layer is formed, metal layer covers the outer surface of the first color-filter element and the first metal grate；And metal layer is carried out For patterned process to form the second metal grate, the second metal grate covers the outside of the first color-filter element and the first metal grate Side surface.

A kind of semiconductor device another aspect of the present disclosure provides, the semiconductor device include: substrate, lining Bottom includes multiple radiation sensitive areas；First color-filter element, the first color-filter element are located on substrate, including the first dielectric section and with Corresponding second dielectric section of one dielectric section, each first color-filter element respectively with the radiation of at least one of multiple radiation sensitive areas Sensing area is corresponding；First metal grate covers a part from substrate of the exterior side surfaces of the first color-filter element；And the Two metal grates cover remaining exterior side surfaces of the first color-filter element and the exterior side surfaces of the first metal grate.

According to one aspect of the disclosure, a kind of method for manufacturing semiconductor device is provided, this method comprises: providing lining Bottom, substrate include multiple radiation sensitive areas；Intermediate dielectric layer is formed on the substrate；To intermediate dielectric layer carry out patterned process with Form the first color-filter element, wherein each first color-filter element respectively at least one radiation sensitive in multiple radiation sensitive areas Area is corresponding；Metal layer is formed, metal layer covers the outer surface of the first color-filter element；And patterned process is carried out to metal layer To form metal grate, metal grate covers the exterior side surfaces of the first color-filter element.

A kind of semiconductor device another aspect of the present disclosure provides, the semiconductor device include: substrate, lining Bottom includes multiple radiation sensitive areas；First color-filter element, the first color-filter element are located on substrate, and each first color-filter element It is corresponding at least one radiation sensitive area in multiple radiation sensitive areas respectively；And metal grate, metal grate covering first The exterior side surfaces of color-filter element.

By the detailed description referring to the drawings to the exemplary embodiment of the disclosure, the other feature of the disclosure and its Advantage will become more apparent from.

Detailed description of the invention

The attached drawing for constituting part of specification describes embodiment of the disclosure, and together with the description for solving Release the principle of the disclosure.

The disclosure can be more clearly understood according to following detailed description referring to attached drawing, in which:

Fig. 1 shows the process of the manufacturing method of the semiconductor device according to disclosure one or more exemplary embodiment Figure.

Fig. 2A to Fig. 2 G is the schematic cross-sectional for showing semiconductor device corresponding with the part steps of method shown in FIG. 1 Figure.

Fig. 3 shows the schematic sectional view of the semiconductor device according to disclosure one or more exemplary embodiment.

Fig. 4 shows the stream of the manufacturing method of the semiconductor device according to the disclosure another or multiple exemplary embodiments Cheng Tu.

Fig. 5 A to Fig. 5 F is the schematic cross-sectional for showing semiconductor device corresponding with the part steps of method shown in Fig. 4 Figure.

Fig. 6 shows the schematic cross-sectional of the semiconductor device according to the disclosure another or multiple exemplary embodiments Figure.

Note that same appended drawing reference is used in conjunction between different attached drawings sometimes in embodiments described below It indicates same section or part with the same function, and omits its repeated explanation.In some cases, using similar mark Number and letter indicate similar terms, therefore, once being defined in a certain Xiang Yi attached drawing, then do not needed in subsequent attached drawing pair It is further discussed.

In order to make it easy to understand, position, size and range of each structure shown in attached drawing etc. etc. do not indicate practical sometimes Position, size and range etc..Therefore, the disclosure is not limited to position, size and range disclosed in attached drawing etc. etc..

Specific embodiment

Present inventors appreciate that traditional imaging sensor face in terms of reducing crosstalk so as to improve image quality Face larger challenge.

Specifically, present inventors appreciate that, the crosstalk being widely present between the sensing unit of imaging sensor Problem can greatly influence the accuracy and efficiency of each sensing unit, to deteriorate the image quality of imaging sensor.Tradition Imaging sensor metal grate generally is set in color-filter element layer below, with reduce the crosstalk between sensing unit without Influence the radiation receiving surface product of color-filter element.However, the crosstalk between sensing unit, the especially wherein string between color-filter element It disturbs still more serious, has an adverse effect to picture quality.

Therefore, reduce the crosstalk between color-filter element in the image sensor to further suppress between sensing unit Crosstalk, for improving the practicability and application prospect important in inhibiting of imaging sensor.

Present inventor proposes a kind of semiconductor device and its manufacturing method.In the semiconductor device (for example, figure As sensor) manufacturing method each embodiment in, set in the layer for being used to form color-filter element around entire color-filter element Metal grate is set, to obtain the color-filter element of buried type.Wherein, color-filter element may include panchromatic color-filter element and coloured filter Color component.Moreover, at least part (for example, close to part of incident side) of metal grate is for example, by depositing operation It is formed on the exposed surface (hereinafter referred to outer surface) of the color-filter element (for example, panchromatic color-filter element) of a part And it is subsequently patterned to obtain.Wherein, patterned process include retained using anisotropic selective etch it is vertical Part, to obtain desired metal grate.In addition, the application is designed the refractive index of the material of color-filter element, with Reduce reflection of the color-filter element to radiation.

Advantageously, it can not increase technology difficulty using the technology of the disclosure and guarantee sufficient radiation receiving surface product Under the premise of reduce crosstalk between sensing unit, to improve the accuracy and efficiency of each sensing unit, and then improve image The image quality of sensor.

In addition, those skilled in the art can understand, although example described herein primarily directed to imaging sensor into Row processing, but the present invention is readily applicable to other semiconductor devices sensed to radiation.

It is described in detail the various exemplary embodiments of the disclosure below with reference to accompanying drawings.It should also be noted that unless in addition having Body explanation, the unlimited system of component and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally Scope of disclosure.

Be to the description only actually of at least one exemplary embodiment below it is illustrative, never as to the disclosure And its application or any restrictions used.That is, structure and method herein is to show in an exemplary fashion, for The different embodiments of structures and methods in the bright disclosure.It will be understood by those skilled in the art, however, that they be merely illustrative can Exemplary approach with the disclosure for being used to implement, rather than mode exhausted.In addition, attached drawing is not necessarily drawn to scale, it is some Feature may be amplified to show the details of specific component.

Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable In the case of, the technology, method and apparatus should be considered as authorizing part of specification.

It is shown here and discuss all examples in, any occurrence should be construed as merely illustratively, without It is as limitation.Therefore, the other examples of exemplary embodiment can have different values.

Fig. 1 shows the process of the manufacturing method of the semiconductor device according to disclosure one or more exemplary embodiment Figure.Fig. 2A to Fig. 2 G is the schematic sectional view for showing semiconductor device corresponding with the part steps of method shown in FIG. 1.Under Face will be illustrated in conjunction with Fig. 1 and Fig. 2A to 2G.

In step 102, substrate is provided, wherein the substrate includes multiple radiation sensitive areas.

In step 104, the first middle layer is formed on the substrate, wherein the first middle layer includes multiple interlevel dielectric portions and will The first metal grate that adjacent interlevel dielectric portion separates, wherein in each interlevel dielectric portion and multiple radiation sensitive areas at least One radiation sensitive area is corresponding.

In step 106, the second middle layer is formed in the first middle layer.

In step 108, patterned process is carried out to multiple interlevel dielectric portions and the second middle layer, to retain multiple intermediate Jie Interlevel dielectric portion of at least some of electric portion obtains the second dielectric section as the first dielectric section and from the second middle layer, wherein respectively A second dielectric section is corresponding with each first dielectric section respectively, and at least part of the first metal grate is exposed and first Dielectric section and the second corresponding dielectric section form the first color-filter element.

In step 110, metal layer is formed, wherein the external table of metal layer covering the first color-filter element and the first metal grate Face.

In step 112, patterned process is carried out to form the second metal grate, wherein the second metal grate is covered to metal layer The exterior side surfaces of lid the first color-filter element and the first metal grate.

In a step 102, as shown in Figure 2 A, substrate 202 is provided.

The example of the material of substrate 202 can include but is not limited to unitary semiconductor material (such as, silicon or germanium etc.), chemical combination Object semiconductor material (such as silicon carbide, SiGe, GaAs, gallium phosphide, indium phosphide, indium arsenide and/or indium antimonide) or combinations thereof. In other embodiments, substrate may be the various compound substrates such as silicon-on-insulator (SOI), silicon germanium on insulator.This Field it will be appreciated by the skilled person that be not particularly limited for substrate 202, but can be selected according to practical application It selects.

In various embodiments, substrate 202 includes multiple radiation sensitive areas 204.

In some embodiments, radiation sensitive area 204 may include by N-shaped and/or p-type dopant in substrate 202 shape At doped region.Using the doped region, radiation sensitive area 204 is able to carry out radiation sensitive and generates charge (particularly, electricity Son).

In some embodiments, can such as spread and/or ion implantation doping agent by way of come formed radiation sense Survey the doped region in area 204.However, it should be readily apparent to one skilled in the art that the invention is not limited thereto, it can also be using others Doping method forms doped region.

Optionally, in some embodiments, after step 102, buffer dielectric layer 208 is formed on substrate 202.

In step 104, as shown in Figure 2 B, the first middle layer 210 is formed on substrate 202.

In some embodiments, buffer dielectric layer 208 is clipped between substrate 202 and the first middle layer 210, such as Fig. 2 B institute Show.

In various embodiments, the first middle layer 210 includes multiple interlevel dielectric portions 212 and by adjacent interlevel dielectric portion 212 the first metal grates 216 separated.

In various embodiments, at least one of each interlevel dielectric portion 212 and multiple radiation sensitive areas 204 radiation sense It is corresponding to survey area 204.

Here, " correspondence " refers to that interlevel dielectric portion 212 and at least one radiation sensitive area 204 are arranged in a top view at least Partly it is overlapped.For example, as shown in Figure 2 B, interlevel dielectric portion 212 is arranged to be aligned in a top view with radiation sensitive area 204. It will be appreciated, however, by one skilled in the art that the corresponded manner in interlevel dielectric portion 212 and radiation sensitive area 204 be not limited to Upper example.

In addition, each interlevel dielectric portion 212 shown in figure is right with a radiation sensitive area 204 for the ease of illustrating It answers.But it should be readily apparent to one skilled in the art that the invention is not limited thereto.For example, in some embodiments, interlevel dielectric portion 212 It can be corresponding with multiple radiation sensitive areas 204.

In some embodiments, forming the first middle layer 210 may include: to form the first metal layer (not on substrate 202 Illustrate) and processing is patterned to form the first metal grate 216；And the opening obtained after patterned process Middle formation interlevel dielectric portion 212.

Alternatively, in some embodiments, forming the first middle layer 210 may include: to form first on substrate 202 Dielectric layer (not illustrating) is simultaneously patterned processing to form interlevel dielectric portion 212, and obtains after patterned process Gap in form the first metal grate 216.

Although the first metal grate 216 shown in figure is aligned with interlevel dielectric portion 212, this is only to illustrate.Ability Field technique personnel are readily appreciated that the invention is not limited thereto.The first metal grate 216 that adjacent interlevel dielectric portion 212 is separated Interlevel dielectric portion 212 can also be slightly above.

In some embodiments, interlevel dielectric portion 212 is transparent.

For example, the example for the material for forming interlevel dielectric portion 212 can include but is not limited to: silica, silicon nitride, carbonization Any one or more in silicon or other low-k materials.

In some embodiments, the example of the material of the first metal grate 216 can include but is not limited to: tungsten, copper, aluminium, Any one or more in titanium and alloy.

In step 106, as shown in Figure 2 C, the second middle layer 220 is formed in the first middle layer 210.

In some embodiments, the second middle layer 220 is suitable for transparent material of the invention and is formed by any.

For example, forming the example of transparent material of the second middle layer 220 can include but is not limited to: silica, silicon nitride, Any one or more in silicon carbide or other low-k materials.

In step 108, as shown in Figure 2 D, multiple interlevel dielectric portions 212 and the second middle layer 220 are carried out at patterning Reason, using retain at least some of multiple interlevel dielectric portions 212 as the first dielectric section 214 and from the second middle layer 220 must To the second dielectric section 224.

In some embodiments, by the patterned process in step 108, in each in multiple interlevel dielectric portions 212 Between dielectric section 212 or be retained or be removed, and the part of the second middle layer 220 be retained and rest part is removed. Wherein, the interlevel dielectric portion 212 of reservation referred to as the first dielectric section 214, and the part shape of the second middle layer 220 being retained At multiple second dielectric sections 224.

In some embodiments, alternately retain or remove interlevel dielectric portion 212.For example, as shown in Figure 2 D, first is situated between Electric portion 214 (the interlevel dielectric portion 212 of reservation) is not adjacent to each other.

In various embodiments, as shown in Figure 2 D, each second dielectric section 224 is right with each first dielectric section 214 respectively It answers.

In various embodiments, as shown in Figure 2 D, the first dielectric section 214 and the second corresponding dielectric section 224 formation First color-filter element 234.

In some embodiments, each of obtain the first color-filter element 234 respectively in multiple radiation sensitive areas 204 extremely A few radiation sensitive area 204 is corresponding.

In some embodiments, the first color-filter element 234 obtained is not adjacent to each other.In other words, with the first color-filter element 234 corresponding radiation sensitive areas 204 and radiation sensitive area 204 not corresponding with the first color-filter element 234 are interspersed.

In some embodiments, the patterned process carried out to multiple interlevel dielectric portions 212 and the second middle layer 220 can be with It completes in a single step.

For example, in some embodiments, by selecting suitable etchant, can be etched to obtain in a single step First color-filter element 234.

It should be readily apparent to one skilled in the art that any of suitable etch process, such as wet process can be used in the present invention Etching, dry etching etc..

It in some embodiments, is transparent by the first dielectric section 214 that interlevel dielectric portion 212 obtains.

In some embodiments, it is by carrying out the second dielectric section 224 that patterned process obtains to the second middle layer 220 Transparent.

According to above-mentioned analysis, in some embodiments, including the first dielectric section 214 and the second corresponding dielectric section 224 the first color-filter element 234 is transparent.That is, the first color-filter element 234 is panchromatic color-filter element.Radiation can be without Filtering and enter in radiation sensitive area 204 corresponding with the first color-filter element 234.

Advantageously, panchromatic color-filter element is arranged in semiconductor devices can allow for more radiating into radiation sensitive The susceptibility to radiation is improved to increase sensing light quantity in area.

In some embodiments, in the first color-filter element 234, the refractive index of material is from the first dielectric section 214 to It is gradually reduced on the direction of two dielectric sections 224.

For example, in some embodiments, when the first dielectric section 214 and/or the second dielectric in the first color-filter element 234 It may include more than two kinds of materials when portion 224 is multilayered structure, in the first color-filter element 234.In order to reduce by the first color-filter element The reflection of 234 pairs of incident radiation, the refractive index of these materials are designed to from first the 214 to the second dielectric section of dielectric section It is gradually reduced on 224 direction.That is, the normal incidence of the refractive index of the material in the first color-filter element 234 in radiation It is gradually increased on direction.

Alternatively, in some embodiments, when the first dielectric section 214 and the second dielectric section in the first color-filter element 234 224 when being single layer structure, and the refractive index for forming the material of the first dielectric section 214, which is designed to be greater than, forms the second dielectric section The refractive index of 224 material.

Advantageously, the above design is carried out by the refractive index of the material to the first color-filter element 234, incident spoke can be converged The total reflection effect of incident radiation is penetrated, avoids, to enhance sensing susceptibility and improve image quality.

Also or, in some embodiments, the first dielectric section 214 and the second dielectric section 224 can be by identical material shapes At.That is, the first color-filter element 234 is formed by homogenous material.

In some embodiments, the refractive index for forming the material of buffer dielectric layer 208, which is greater than, forms the first color-filter element 234 Material refractive index.

In various embodiments, at least part of the first metal grate 216 is exposed.

For example, as shown in Figure 2 D, outside (exposing) surface of the first metal grate 216 includes top surface and outer side table Face

In step 110, as shown in Figure 2 E, metal layer 228 is formed.

In some embodiments, metal layer 228 is formed by deposition processes.

For example, in some embodiments, one of following deposition processes or a variety of formation metal layers 228 can be passed through: Chemical vapor deposition, plasma enhanced chemical vapor deposition, atomic layer deposition.

Advantageously, the metal layer 228 formed by Atomic layer deposition method is finer and close, uniform, can preferably inhibit Crosstalk.

However, it should be readily apparent to one skilled in the art that the invention is not limited thereto, can also using other suitable materials and Method forms metal layer 228.

In various embodiments, metal layer 228 covers the external table of the first color-filter element 234 and the first metal grate 216 Face.In some embodiments, as shown in Figure 2 E, metal layer 228 also covers the buffer dielectric layer exposed in patterned process 208。

It is worth noting that, in some embodiments, the metal layer being deposited directly on the surface of the first color-filter element 234 228 can be relatively thin thin film.

In step 112, as shown in Figure 2 F, patterned process is carried out to form the second metal grate 226 to metal layer 228.

In various embodiments, the second metal grate 226 covers the first color-filter element 234 and the first metal grate 216 Exterior side surfaces.

As shown in Figure 2 F, in some embodiments, the first part 226-1 of the second metal grate 226 covers the first metal The exterior side surfaces of grid 216, and the second part 226-2 of the second metal grate 226 covers the outer of the first color-filter element 234 Portion side surface.

Although first part 226-1 and second part 226-2 shown in figure are separation, this is only example. It will be appreciated by those skilled in the art that first part 226-1 and second part 226-2 be also possible to it is integrated.

In some embodiments, the second metal grate 226 is obtained by anisotropic selective etch.For example, In some embodiments, by designing suitable exposure mask and/or etchant, by the parallel with the surface of substrate 202 of metal layer 228 Horizontal component removal on direction, and by the vertical portion code insurance on the direction vertical with the surface of substrate 202 of metal layer 228 It stays.

As shown in Figure 2 F, the second metal grate 226 and the first metal grate 216 are both formed in 234 institute of the first color-filter element Layer in.Moreover, the second metal grate 226 and the first metal grate 216 that are formed cover entire first color-filter element 234 Side surface, that is, the first color-filter element 234 is buried type.

According to step 110- step 112, the second metal grate 226 can be by the first color-filter element 234 and the first gold medal Belong to and form metal layer 228 on the outer surface of grid 216, and is patterned (for example, anisotropic etching) then to remove Its horizontal component and formed.That is, the second metal grate 226 can be the vertical portion of metal layer 228.Therefore, the second metal gate Shape contour, the size of lattice 226 can be related to metal layer 228 according to the first color-filter element 234, the first metal grate 216 Parameter and change.

In some embodiments, the total height of the second metal grate 226 phase approximate with the height of the first color-filter element 234 Deng.For example, the height of the first part 226-1 and second part 226-2 of the second metal grate 226 respectively with the first metal grate 216 and first color-filter element 234 exterior side surfaces height it is approximately equal.Here, " approximately equal " refers to that there may be by example Such as the small error of etching process bring.

In some embodiments, the thickness of the vertical portion with a thickness of metal layer 228 of the second metal grate 226.For example, When the thickness of the vertical portion of the metal layer 228 of formation is smaller, the thickness of the second metal grate 226 will be smaller.

Advantageously, in this application, the second more desirable metal gate can be obtained under the premise of not increasing technical difficulty The shape contour and size of lattice 226.

For example, no matter the height (that is, height of the second metal grate 226) of the first color-filter element 234 is how many, as long as will Metal layer 228 is formed as the lesser film of thickness, so that it may obtain the second relatively thin metal grate 226.In other words, the second metal The thickness of grid 226 not will receive the limitation of oneself height.Therefore, compared to the tradition shaped by direct patterned process The depth-to-width ratio of lattice structure, the second metal grate 226 of the application can be limited less by the technique of existing patterning method System.That is, the second metal grate 226 can have bigger depth-to-width ratio.

Advantageously, the second metal grate 226 with bigger depth-to-width ratio is suitable for that color-filter element is isolated simultaneously Guarantee the sufficient radiation receiving surface product of color-filter element.For example, the second metal grate 226, which can be arranged to, extends to The upper surface of one color-filter element 234.The arrangement can not only be realized to all spokes being incident in the first color-filter element 234 The certain space limitation of row is injected, to reduce crosstalk, and will not be to the surface towards radiation side of the first color-filter element 234 Product produces bigger effect, to avoid the loss of light quantity, improves sensing efficiency.

It is furthermore advantageous to which the first metal grate 216 is arranged to around the close radiation sensitive area of the first color-filter element 234 204 side.The thickness of first metal grate 216 is greater than the thickness of the second metal grate 226, more effectively can inhibit spoke The crosstalk penetrated.

Moreover, the second partial metal grate 226 is arranged in the exterior side surfaces of the first metal grate 216, so that Second metal grate 226 and the first metal grate 216 are linked to be an entirety, this is advantageously implemented the completely isolated of crosstalk.

Optionally, as shown in Figure 2 G, in some embodiments, after forming the second metal grate 226, the second filter is formed Color component 218.

In some embodiments, each second color-filter element 218 respectively in the multiple radiation sensitive area 204 at least One not corresponding with the corresponding radiation sensitive area 204 of the first color-filter element 234.

In some embodiments, the second color-filter element 218 is colored filter element.Radiation energy with frequency-specific feature It is enough to be entered in radiation sensitive area 204 corresponding with the second color-filter element 218 through the second color-filter element 218.

In some embodiments, as shown in Figure 2 G, adjacent color-filter element (including the first color-filter element 234 and the second filter Color component 218) between separated by the first metal grate 216 and the second metal grate 226.

Advantageously, using the first metal grate 216 of the application and the second metal grate 226, different color-filter elements it Between crosstalk be effectively suppressed.

It is worth noting that, the boundary between each step of production semiconductor device above is merely illustrative. In actual operation, in any combination, or even single step can be synthesized between each step.In addition, the execution of each step is suitable Sequence is not limited by description order, and part steps can be omitted.

Fig. 3 shows the schematic sectional view of the semiconductor device according to disclosure one or more exemplary embodiment.On Face combines content described in Fig. 1 and Fig. 2A to Fig. 2 G to be readily applicable to corresponding feature.

As shown in figure 3, semiconductor device 200 includes: substrate 202, including multiple radiation sensitive areas 204；First colour filter member Part 234 is located on substrate 202, including the first dielectric section 214 and second dielectric section 224 corresponding with the first dielectric section 214, often A first color-filter element 234 is corresponding at least one radiation sensitive area 204 in multiple radiation sensitive areas 204 respectively；First gold medal Belong to grid 216, covers a part from substrate 202 of the exterior side surfaces of the first color-filter element 234；Second metal grate 226, cover remaining exterior side surfaces of the first color-filter element 234 and the exterior side surfaces of the first metal grate 216.

In various embodiments, as shown in figure 3, substrate 202 includes multiple radiation sensitive areas 204.

As shown in figure 3, semiconductor device 200 further includes the first color-filter element 234 on substrate 202.In each reality It applies in example, the first color-filter element 234 includes the first dielectric section 214 and second dielectric section 224 corresponding with the first dielectric section 214.

In some embodiments, the first dielectric section 214 and the second dielectric section 224 are transparent.

In some embodiments, formed the material of the first dielectric section 214 and the second dielectric section 224 example may include but It is not limited to: any one or more in silica, silicon nitride, silicon carbide or other low-k materials.

Advantageously, the above design is carried out by the refractive index to the material in the first color-filter element 234, incidence can be converged The total reflection effect of incident radiation is radiated, avoids, to enhance sensing susceptibility and improve image quality.

In various embodiments, each first color-filter element 234 respectively at least one in multiple radiation sensitive areas 204 A radiation sensitive area 204 is corresponding

Here, " correspondence " refers to that the first color-filter element 234 is arranged in a top view extremely at least one radiation sensitive area 204 Partially it is overlapped.For example, as shown in Figure 2 B, the first color-filter element 234 is arranged to radiation sensitive area 204 in a top view Alignment.It will be appreciated, however, by one skilled in the art that the first color-filter element 234 and the corresponded manner in radiation sensitive area 204 are not It is limited to above example.

In addition, for the ease of illustrating, each first color-filter element 234 shown in figure with a radiation sensitive area 204 It is corresponding.But it should be readily apparent to one skilled in the art that the invention is not limited thereto.For example, in some embodiments, the first color-filter element 234 can be corresponding with multiple radiation sensitive areas 204.

In some embodiments, the first color-filter element 234 is not adjacent to each other.In other words, corresponding with the first color-filter element 234 Radiation sensitive area 204 and radiation sensitive area 204 not corresponding with the first color-filter element 234 be interspersed.

As shown in figure 3, semiconductor device 200 further includes the first metal grate 216.

In various embodiments, the first metal grate 216 covers the slave substrate of the exterior side surfaces of the first color-filter element 234 202 a part.

For example, as shown in figure 3, the first metal grate 216 is aligned with the first dielectric section 214.But this is only to illustrate, ability Field technique personnel are readily appreciated that the invention is not limited thereto.For example, in some embodiments, the first metal grate 216 can also be omited Higher than the first dielectric section 214.

In various embodiments, the second metal grate 226 covers remaining exterior side surfaces and the of the first color-filter element 234 The exterior side surfaces of one metal grate 216.

For example, in some embodiments, as shown in figure 3, the first part 226-1 covering first of the second metal grate 226 The exterior side surfaces of metal grate 216, and the second part 226-2 of the second metal grate 226 covers the first color-filter element 234 Remaining exterior side surfaces.

In some embodiments, the second metal grate 226 can be by the first color-filter element 234 and the first metal gate Metal layer 228 is formed on the outer surface of lattice 216, and is patterned (for example, anisotropic etching) then to remove its water It is flat partially to be formed.

In some embodiments, metal layer 228 is formed by deposition processes.

According to the above analysis, in some embodiments, the second metal grate 226 can be the vertical portion of metal layer 228 Point.Therefore, the shape contour of the second metal grate 226 and size can be according to the first color-filter elements 234, the first metal grate 216 and metal layer 228 relevant parameter and change.

In some embodiments, the total height of the second metal grate 226 phase approximate with the height of the first color-filter element 234 Deng.

Therefore, the second metal grate 226 can have bigger depth-to-width ratio.

Advantageously, the first metal grate 216 is arranged to around the close radiation sensitive area 204 of the first color-filter element 234 Side.In some embodiments, the first metal grate 216 can be directly shaped using patterned process.First metal grate 216 thickness is greater than the thickness of the second metal grate 226, can be more effectively in the crosstalk for inhibiting radiation.

In some embodiments, the example of the material of the first metal grate 216 and the second metal grate 226 may include but It is not limited to: any one or more in tungsten, copper, aluminium, titanium and alloy.

Optionally, in some embodiments, as shown in figure 3, semiconductor device 200 further includes the second color-filter element 218.

In some embodiments, each second color-filter element 218 respectively in the multiple radiation sensitive area 204 at least One not corresponding with the corresponding radiation sensitive area of the first color-filter element 234

In some embodiments, (including the first color-filter element 234 and the second colour filter as shown in figure 3, adjacent color-filter element Element 218) between separated by the first metal grate 216 and the second metal grate 226.

Optionally, in some embodiments, semiconductor device 200 further includes buffer dielectric layer 208.The buffer dielectric layer 208 are clipped between the layer at 234 place of substrate 202 and the first color-filter element.

Fig. 4 shows the manufacturing method of the semiconductor device according to the disclosure another or multiple exemplary embodiments Flow chart.Fig. 5 A to Fig. 5 F is the schematic cross-sectional for showing semiconductor device corresponding with the part steps of method shown in Fig. 4 Figure.It is illustrated below in conjunction with Fig. 4 and Fig. 5 A to 5F.Above with regard in Fig. 1, Fig. 2A to Fig. 2 G and Fig. 3 component and The explanation of corresponding steps or technique can be adapted for Fig. 4 and the same or similar component, step or technique be described below, because This is omitted here to its repeated explanation.

In step 402, substrate is provided, wherein the substrate includes multiple radiation sensitive areas.

In step 404, intermediate dielectric layer is formed on the substrate.

In step 406, patterned process is carried out to form the first color-filter element to intermediate dielectric layer, wherein each first filter Color component is corresponding at least one radiation sensitive area in multiple radiation sensitive areas respectively.

In step 408, metal layer is formed, metal layer covers the outer surface of the first color-filter element.

In step 410, patterned process is carried out to metal layer to form metal grate, metal grate covers the first colour filter member The exterior side surfaces of part.

In step 402, as shown in Figure 5A, substrate 502 is provided.In various embodiments, substrate 502 includes multiple spokes Penetrate sensing area 504.

Optionally, in some embodiments, after step 402, buffer dielectric layer 508 is formed on substrate 502.

In step 404, as shown in Figure 5 B, intermediate dielectric layer 510 is formed on substrate 502.

In some embodiments, buffer dielectric layer 508 is clipped between substrate 502 and intermediate dielectric layer 510, such as Fig. 5 B institute Show.

In some embodiments, intermediate dielectric layer 510 is transparent.

For example, forming the example of the material of intermediate dielectric layer 510 can include but is not limited to: silica, silicon nitride, carbonization Any one or more in silicon or other low-k materials.

In step 406, as shown in Figure 5 C, patterned process is carried out to form the first color-filter element to intermediate dielectric layer 510 514。

In some embodiments, by carrying out the first color-filter element 514 that patterned process obtains to intermediate dielectric layer 510 It is transparent.That is, the first color-filter element 514 is panchromatic color-filter element.Radiation can enter and the first filter without filtering In the corresponding radiation sensitive area 504 of color component 514.

In some embodiments, in the first color-filter element 514, the refractive index of material is along the direction far from substrate 502 It is gradually reduced.

For example, in some embodiments, when the first color-filter element 514 includes multilayered structure, in order to reduce to incidence The reflection of radiation, the refractive index of the material of multilayered structure are designed to be gradually reduced along the direction far from substrate 502.Namely It says, the refractive index of the material in the first color-filter element 514 is gradually increased on the direction of the normal incidence of radiation.

Advantageously, the above design is carried out by the refractive index of the material to the first color-filter element 514, incident spoke can be converged The total reflection effect of incident radiation is penetrated, avoids, to enhance sensing susceptibility and improve image quality.

Alternatively, in some embodiments, the first color-filter element 514 is formed by homogenous material.

In some embodiments, the refractive index for forming the material of buffer dielectric layer 508, which is greater than, forms the first color-filter element 514 Material refractive index.

In various embodiments, the first color-filter element of each of formation 514 respectively in multiple radiation sensitive areas 504 extremely A few radiation sensitive area 504 is corresponding.

Here, " correspondence " refers to that the first color-filter element 514 is arranged in a top view extremely at least one radiation sensitive area 504 Partially it is overlapped.For example, as shown in Figure 5 B, the first color-filter element 514 is arranged to right in a top view with radiation sensitive area 504 It is quasi-.It will be appreciated, however, by one skilled in the art that the first color-filter element 514 and the corresponded manner in radiation sensitive area 504 are unlimited In above example.

In addition, for the ease of illustrating, each first color-filter element 514 shown in figure with a radiation sensitive area 504 It is corresponding.But it should be readily apparent to one skilled in the art that the invention is not limited thereto.For example, in some embodiments, the first color-filter element 514 can be corresponding with multiple radiation sensitive areas 504.

In some embodiments, the first color-filter element 514 of formation is not adjacent to each other.In other words, with the first color-filter element 514 corresponding radiation sensitive areas 504 and radiation sensitive area 504 not corresponding with the first color-filter element 514 are interspersed.

In step 408, as shown in Figure 5 D, metal layer 520 is formed.

In various embodiments, metal layer 520 covers the outer surface of the first color-filter element 514.

In some embodiments, the outer surface of the first color-filter element 514 includes top surface and exterior side surfaces.

In some embodiments, as shown in Figure 5 D, metal layer 520 also covers the buffering dielectric exposed in patterned process Layer 508.

In some embodiments, metal layer 520 is formed by deposition processes.

For example, in some embodiments, one of following deposition processes or a variety of formation metal layers 520 can be passed through: Chemical vapor deposition, plasma enhanced chemical vapor deposition, atomic layer deposition.

Advantageously, the metal layer 520 formed by Atomic layer deposition method is finer and close, uniform, can preferably inhibit Crosstalk.

However, it should be readily apparent to one skilled in the art that the invention is not limited thereto, can also using other suitable materials and Method directly forms metal layer 520.

It is worth noting that, in some embodiments, being deposited directly to the metal layer 520 on 514 surface of the first color-filter element It can be relatively thin thin film.

In some embodiments, the example of the material of metal layer 520 can include but is not limited to: tungsten, copper, aluminium, titanium and Any one or more in alloy.

In step 410, as shown in fig. 5e, patterned process is carried out to form metal grate 516 to metal layer 520.

In various embodiments, metal grate 516 covers the exterior side surfaces of the first color-filter element 514.

In some embodiments, metal grate 516 is obtained by anisotropic selective etch.For example, some In embodiment, by designing suitable exposure mask and/or etchant, by the side parallel with the surface of substrate 502 of metal layer 520 Upward horizontal component removal, and the vertical portion on the direction vertical with the surface of substrate 502 of metal layer 520 is retained.

As shown in fig. 5e, metal grate 516 is formed in the layer at 514 place of the first color-filter element.Moreover, the metal formed Grid 516 covers the side surface of entire first color-filter element 514, that is, the first color-filter element 514 is buried type.

According to step 408- step 410, metal grate 516 can be by the outer surface of the first color-filter element 514 Metal layer 520 is formed, and is then patterned (for example, anisotropic etching) and is formed with removing its horizontal component.That is, Metal grate 516 can be the vertical portion of metal layer 520.Therefore, the shape contour of metal grate 516, size being capable of bases The relevant parameter of first color-filter element 514 and metal layer 520 and change.

In some embodiments, the height of metal grate 516 is approximately equal with the height of the first color-filter element 514.Here, " approximately equal " refers to that there may be by such as small error of etching process bring.

In some embodiments, the thickness of the vertical portion with a thickness of metal layer 520 of metal grate 516.For example, working as shape At metal layer 520 vertical portion thickness it is smaller when, the thickness of metal grate 516 will be smaller.

Advantageously, in this application, more desirable metal grate can be obtained under the premise of not increasing technical difficulty 516 shape contour and size.

For example, the thickness of metal grate 516 not will receive the limitation of oneself height.Therefore, at compared to direct patterning The conventional grid structure managed and shaped, the depth-to-width ratio of the metal grate 516 of the application can be less by existing patterning side The technique of method limits.That is, metal grate 516 can have bigger depth-to-width ratio.

Advantageously, the metal grate 516 with bigger depth-to-width ratio is suitable for that color-filter element is isolated and is guaranteed The sufficient radiation receiving surface product of color-filter element.For example, metal grate 516, which can be arranged to, extends to the first colour filter member The upper surface of part 514.The arrangement can not only realize to all radiation being incident in each first color-filter element 514 into The certain space limitation of row to reduce crosstalk, and will not produce the surface area towards radiation side of the first color-filter element 514 Raw larger impact improves sensing efficiency to avoid the loss of light quantity.

Optionally, as illustrated in figure 5f, in some embodiments, after forming metal grate 516, the second color-filter element is formed 518。

In various embodiments, each second color-filter element 518 respectively at least one in multiple radiation sensitive areas 504 It is a not corresponding with the corresponding radiation sensitive area of the first color-filter element 514

In some embodiments, the second color-filter element 518 is colored filter element.Radiation energy with frequency-specific feature It is enough to be entered in radiation sensitive area 504 corresponding with the second color-filter element 518 through the second color-filter element 518.

In some embodiments, as illustrated in figure 5f, adjacent color-filter element (including the first color-filter element 514 and the second filter Color component 518) between separated by metal grate 516.

Advantageously, using the metal grate of the application 516, the crosstalk between different color-filter elements is effectively suppressed.

Advantageously, according to this another or multiple exemplary embodiments semiconductor device manufacturing method it is relatively easy, It is easier to realize.

Fig. 6 shows the schematic sectional view of the semiconductor device according to disclosure one or more exemplary embodiment.On Face combines content described in Fig. 4 and Fig. 5 A to Fig. 5 F to be readily applicable to corresponding feature.In addition, above with regard to Fig. 1, Fig. 2A The explanation of component and corresponding steps into Fig. 2 G and Fig. 3 or technique can be adapted for Fig. 6, therefore be omitted here to it Repeated explanation.

As shown in fig. 6, semiconductor device 500 includes: substrate 502, including multiple radiation sensitive areas 504；First colour filter member Part 514, be located at substrate 502 on, and each first color-filter element 514 respectively at least one in multiple radiation sensitive areas 504 A correspondence；And metal grate 516, cover the exterior side surfaces of the first color-filter element 514.

In various embodiments, as shown in fig. 6, substrate 502 includes multiple radiation sensitive areas 504.

As shown in fig. 6, semiconductor device 500 further includes the first color-filter element 514 on substrate 502.

In some embodiments, the first color-filter element 514 is transparent.

In some embodiments, the example for forming the material of the first color-filter element 514 can include but is not limited to: oxidation Any one or more in silicon, silicon nitride, silicon carbide or other low-k materials.

For example, in some embodiments, when the first color-filter element 514 includes multilayered structure, in order to reduce to incidence The reflection of radiation, the refractive index of the material of the multilayered structure are designed to be gradually reduced along the direction far from substrate 502.Also It is to say, the refractive index of the material in the first color-filter element 514 is gradually increased on the direction of the normal incidence of radiation.

In various embodiments, each first color-filter element 514 respectively at least one in multiple radiation sensitive areas 504 A radiation sensitive area 504 is corresponding.

As shown in fig. 6, semiconductor device 500 further includes metal grate 516.

As shown in fig. 6, in some embodiments, metal grate 516 is located in the layer at 514 place of the first color-filter element, and And cover the side surface of entire first color-filter element 514.That is, the first color-filter element 514 is buried type.

In some embodiments, metal grate 516 can be by forming gold on the outer surface of the first color-filter element 514 Belong to layer 520, and is then patterned (for example, anisotropic etching) and formed with removing its horizontal component.

In some embodiments, metal layer 520 is formed by deposition processes.

According to the above analysis, in some embodiments, metal grate 516 can be the vertical portion of metal layer 520.Cause This, shape contour, the size of metal grate 516 can change according to the relevant parameter of the first color-filter element 514 and metal layer 520 Become.

In some embodiments, the height of metal grate 516 is approximately equal with the height of the first color-filter element 514.

Therefore, metal grate 516 can have bigger depth-to-width ratio.

Optionally, as shown in fig. 6, semiconductor device 500 further includes the second color-filter element 518.

In various embodiments, each second color-filter element 518 respectively in the multiple radiation sensitive area 504 at least One not corresponding with the corresponding radiation sensitive area of the first color-filter element 514

In some embodiments, (including the first color-filter element 514 and the second colour filter as shown in fig. 6, adjacent color-filter element Element 518) between separated by metal grate 516.

In some embodiments, the example of the material of metal grate 516 can include but is not limited to: tungsten, copper, aluminium, titanium, with And any one or more in alloy.

Optionally, in some embodiments, semiconductor device 500 further includes buffer dielectric layer 508.The buffer dielectric layer 508 are clipped between the layer at 514 place of substrate 502 and the first color-filter element.

It is worth noting that, although in described above the first color-filter element (234,514) and the second color-filter element (218, 518) panchromatic color-filter element and colored filter element are respectively referred to, but this is only example.It will be understood by those of skill in the art that First color-filter element (234,514) and the second color-filter element (218,518) can also respectively refer to colored filter element and panchromatic filter Color component refers both to colored filter element or refers both to panchromatic color-filter element.

According to one embodiment, in the first color-filter element, the refractive index of material is from the first dielectric section to the second dielectric It is gradually reduced on the direction in portion.

According to one embodiment, the refractive index for forming the material of the first dielectric section is greater than the material for forming the second dielectric section Refractive index.

According to one embodiment, the first color-filter element is transparent.

According to one embodiment, metal layer is formed by deposition processes.

According to one embodiment, after forming the second metal grate, the second color-filter element is formed, so that each second colour filter Element is respectively and radiation sensitive corresponding with the first color-filter element area is not corresponding at least one of multiple radiation sensitive areas.

According to one embodiment, substrate is being provided and is being formed between the first middle layer, buffer dielectric layer is being formed, buffers dielectric Layer is clipped between substrate and the first middle layer.

According to one embodiment, the refractive index for forming the material of buffer dielectric layer is greater than the material for forming the first color-filter element Refractive index.

According to one embodiment, in the first color-filter element, the refractive index of material gradually subtracts along the direction far from substrate It is small.

According to one embodiment, the first color-filter element is transparent.

According to one embodiment, metal layer is formed by deposition processes.

According to one embodiment, after forming metal grate, the second color-filter element is formed, so that each second color-filter element Respectively and radiation sensitive corresponding with the first color-filter element area is not corresponding at least one of multiple radiation sensitive areas.

According to one embodiment, substrate is being provided and is being formed between intermediate dielectric layer, buffer dielectric layer is being formed, buffers dielectric Layer is clipped between substrate and intermediate dielectric layer.

According to one aspect of the disclosure, a kind of semiconductor device is provided, which includes: substrate, substrate Including multiple radiation sensitive areas；First color-filter element, the first color-filter element are located on substrate, including the first dielectric section and with first Corresponding second dielectric section of dielectric section, each first color-filter element are felt with the radiation of at least one of multiple radiation sensitive areas respectively It is corresponding to survey area；First metal grate covers a part from substrate of the exterior side surfaces of the first color-filter element；And second Metal grate covers remaining exterior side surfaces of the first color-filter element and the exterior side surfaces of the first metal grate.

According to one embodiment, the first color-filter element is transparent.

According to one embodiment, metal layer is formed by deposition processes.

According to one embodiment, semiconductor device further include: the second color-filter element, wherein each second color-filter element is distinguished And radiation sensitive corresponding with the first color-filter element area is not corresponding at least one of multiple radiation sensitive areas.

According to one embodiment, semiconductor device further includes buffer dielectric layer, and buffer dielectric layer is clipped in substrate and the first filter Between layer where color component.

According to one aspect of the disclosure, a kind of semiconductor device is provided, which includes: substrate, substrate Including multiple radiation sensitive areas；First color-filter element, the first color-filter element are located on substrate, and each first color-filter element point It is not corresponding at least one radiation sensitive area in multiple radiation sensitive areas；And metal grate, the first filter of metal grate covering The exterior side surfaces of color component.

According to one embodiment, the first color-filter element is transparent.

According to one embodiment, metal layer is formed by deposition processes.

According to one embodiment, semiconductor device further include: the second color-filter element, each second color-filter element respectively with it is more Radiation sensitive area not corresponding with the first color-filter element of at least one of a radiation sensitive area is corresponding.

In the word "front", "rear" in specification and claim, "top", "bottom", " on ", " under " etc., if deposited If, it is not necessarily used to describe constant relative position for descriptive purposes.It should be appreciated that the word used in this way Language be in appropriate circumstances it is interchangeable so that embodiment of the disclosure described herein, for example, can in this institute It is operated in those of description show or other other different orientations of orientation.

As used in this, word " illustrative " means " be used as example, example or explanation ", not as will be by " model " accurately replicated.It is not necessarily to be interpreted than other implementations in any implementation of this exemplary description It is preferred or advantageous.Moreover, the disclosure is not by above-mentioned technical field, background technique, summary of the invention or specific embodiment Given in go out theory that is any stated or being implied limited.

As used in this, word " substantially " means comprising the appearance by the defect, device or the element that design or manufacture Any small variation caused by difference, environment influence and/or other factors.Word " substantially " also allows by ghost effect, makes an uproar Caused by sound and the other practical Considerations being likely to be present in actual implementation with perfect or ideal situation Between difference.

In addition, the description of front may be referred to and be " connected " or " coupling " element together or node or feature.Such as It is used herein, unless explicitly stated otherwise, " connection " mean an element/node/feature and another element/node/ Feature is being directly connected (or direct communication) electrically, mechanically, in logic or in other ways.Similarly, unless separately It clearly states outside, " coupling " means that an element/node/feature can be with another element/node/feature with direct or indirect Mode link mechanically, electrically, in logic or in other ways to allow to interact, even if the two features may It is not directly connected to be also such.That is, " coupling " is intended to encompass the direct connection and indirectly of element or other feature Connection, including the use of the connection of one or more intermediary elements.

In addition, just to the purpose of reference, can with the similar terms such as " first " used herein, " second ", and And it thus is not intended to limit.For example, unless clearly indicated by the context, be otherwise related to structure or element word " first ", " Two " do not imply order or sequence with other such digital words.

It should also be understood that one word of "comprises/comprising" as used herein, illustrates that there are pointed feature, entirety, steps Suddenly, operation, unit and/or component, but it is not excluded that in the presence of or increase one or more of the other feature, entirety, step, behaviour Work, unit and/or component and/or their combination.

In the disclosure, therefore term " offer " " it is right to provide certain from broadly by covering all modes for obtaining object As " including but not limited to " purchase ", " preparation/manufacture ", " arrangement/setting ", " installation/assembly ", and/or " order " object etc..

It should be appreciated by those skilled in the art that the boundary between aforesaid operations is merely illustrative.Multiple operations It can be combined into single operation, single operation can be distributed in additional operation, and operating can at least portion in time Divide and overlappingly executes.Moreover, alternative embodiment may include multiple examples of specific operation, and in other various embodiments In can change operation order.But others are modified, variations and alternatives are equally possible.Therefore, the specification and drawings It should be counted as illustrative and not restrictive.

Although being described in detail by some specific embodiments of the example to the disclosure, the skill of this field Art personnel it should be understood that above example merely to be illustrated, rather than in order to limit the scope of the present disclosure.It is disclosed herein Each embodiment can in any combination, without departing from spirit and scope of the present disclosure.It is to be appreciated by one skilled in the art that can be with A variety of modifications are carried out without departing from the scope and spirit of the disclosure to embodiment.The scope of the present disclosure is limited by appended claims It is fixed.

Claims

1. a kind of method for manufacturing semiconductor device characterized by comprising

Substrate is provided, the substrate includes multiple radiation sensitive areas；

Form the first middle layer over the substrate, first middle layer includes multiple interlevel dielectric portions and by adjacent centre The first metal grate that dielectric section separates, wherein at least one spoke in each interlevel dielectric portion and the multiple radiation sensitive area It is corresponding to penetrate sensing area；

The second middle layer is formed in first middle layer；

Patterned process is carried out to the multiple interlevel dielectric portion and second middle layer, to retain the multiple first dielectric Interlevel dielectric portion of at least some of portion obtains the second dielectric section as the first dielectric section and from second middle layer, wherein Each second dielectric section is corresponding with each first dielectric section respectively, and at least part of first metal grate is exposed, with And first dielectric section and corresponding the second dielectric section form the first color-filter element；

Metal layer is formed, the metal layer covers the outer surface of first color-filter element and first metal grate；With And

Patterned process is carried out to the metal layer to form the second metal grate, the second metal grate covering described first The exterior side surfaces of color-filter element and first metal grate.

2. according to the method described in claim 1, it is characterized by:

In first color-filter element, the refractive index of material is from the first dielectric section to gradually subtracting on the direction of the second dielectric section It is small.

3. according to the method described in claim 1, it is characterized by:

The refractive index for forming the material of first dielectric section is greater than the refractive index for forming the material of second dielectric section.

4. according to the method described in claim 1, it is characterized by:

First color-filter element is transparent.

5. according to right want 1 described in method, it is characterised in that:

The metal layer is formed by deposition processes.

6. the method according to claim 1, wherein the method also includes:

After forming second metal grate, form the second color-filter element so that each second color-filter element respectively with it is described Radiation sensitive area not corresponding with first color-filter element of at least one of multiple radiation sensitive areas is corresponding.

7. according to the method described in claim 1, it is characterized by:

The substrate is being provided and is being formed between first middle layer, is forming buffer dielectric layer, the buffer dielectric layer is clipped in Between the substrate and first middle layer.

8. according to the method described in claim 7, it is characterized by:

The refractive index for forming the material of the buffer dielectric layer is greater than the refractive index for forming the material of first color-filter element.

9. a kind of method for manufacturing semiconductor device characterized by comprising

Intermediate dielectric layer is formed over the substrate；

Patterned process is carried out to form the first color-filter element to the intermediate dielectric layer, wherein each first color-filter element is distinguished It is corresponding at least one radiation sensitive area in the multiple radiation sensitive area；

Metal layer is formed, the metal layer covers the outer surface of first color-filter element；And

Patterned process is carried out to the metal layer to form metal grate, the metal grate covers first color-filter element Exterior side surfaces.

10. according to the method described in claim 9, it is characterized by:

In first color-filter element, the refractive index of material is gradually reduced along the direction far from the substrate.