CN109065511B - 一种带有散热结构的半导体封装件及散热方法 - Google Patents
一种带有散热结构的半导体封装件及散热方法 Download PDFInfo
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- CN109065511B CN109065511B CN201810926943.5A CN201810926943A CN109065511B CN 109065511 B CN109065511 B CN 109065511B CN 201810926943 A CN201810926943 A CN 201810926943A CN 109065511 B CN109065511 B CN 109065511B
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- heat dissipation
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 169
- 239000004065 semiconductor Substances 0.000 title claims abstract description 62
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims description 11
- 239000000084 colloidal system Substances 0.000 claims abstract description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052802 copper Inorganic materials 0.000 claims abstract description 30
- 239000010949 copper Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000007789 sealing Methods 0.000 claims abstract description 23
- 238000004021 metal welding Methods 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 claims description 34
- 239000004519 grease Substances 0.000 claims description 22
- 229920001296 polysiloxane Polymers 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000000110 cooling liquid Substances 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 5
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000010426 asphalt Substances 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 claims 1
- 239000002826 coolant Substances 0.000 claims 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000003381 stabilizer Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810926943.5A CN109065511B (zh) | 2018-08-15 | 2018-08-15 | 一种带有散热结构的半导体封装件及散热方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810926943.5A CN109065511B (zh) | 2018-08-15 | 2018-08-15 | 一种带有散热结构的半导体封装件及散热方法 |
Publications (2)
Publication Number | Publication Date |
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CN109065511A CN109065511A (zh) | 2018-12-21 |
CN109065511B true CN109065511B (zh) | 2020-09-18 |
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Family Applications (1)
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CN201810926943.5A Active CN109065511B (zh) | 2018-08-15 | 2018-08-15 | 一种带有散热结构的半导体封装件及散热方法 |
Country Status (1)
Country | Link |
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CN (1) | CN109065511B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111106079B (zh) * | 2019-11-21 | 2021-08-27 | 青岛歌尔智能传感器有限公司 | 散热芯片及其制作方法和电子设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN205609496U (zh) * | 2016-03-30 | 2016-09-28 | 江苏长电科技股份有限公司 | 一种具有平板微热管散热器芯片封装结构 |
CN205609497U (zh) * | 2016-03-30 | 2016-09-28 | 江苏长电科技股份有限公司 | 一种带有微热管散热架的封装结构 |
CN106067451A (zh) * | 2016-08-22 | 2016-11-02 | 王文庆 | 一种散热式集成电路封装结构 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9337123B2 (en) * | 2012-07-11 | 2016-05-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thermal structure for integrated circuit package |
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2018
- 2018-08-15 CN CN201810926943.5A patent/CN109065511B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN205609496U (zh) * | 2016-03-30 | 2016-09-28 | 江苏长电科技股份有限公司 | 一种具有平板微热管散热器芯片封装结构 |
CN205609497U (zh) * | 2016-03-30 | 2016-09-28 | 江苏长电科技股份有限公司 | 一种带有微热管散热架的封装结构 |
CN106067451A (zh) * | 2016-08-22 | 2016-11-02 | 王文庆 | 一种散热式集成电路封装结构 |
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Publication number | Publication date |
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CN109065511A (zh) | 2018-12-21 |
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TA01 | Transfer of patent application right | ||
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Effective date of registration: 20200821 Address after: 350200 Fujian city of Fuzhou province Changle city Yutian Town East Village Building New Road No. 157 Applicant after: Chen Qun Address before: 215000 Fengyang Road 293, Yangchenghu Town, Xiangcheng District, Suzhou City, Jiangsu Province Applicant before: Wang Xiaoyong |
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Effective date of registration: 20231115 Address after: 518000, Building B3, Block 901-18B, Phase I, Baoneng Science and Technology Park (South Zone), Qinghu Industrial Zone, Gangtou Community, Bantian Street, Longgang District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Paisidi Semiconductor Co.,Ltd. Address before: 350200 157 Jianxin Road, Dong Du Village, Yutian Town, Changle City, Fuzhou, Fujian Patentee before: Chen Qun |