CN109065444A - Method for cutting wafer - Google Patents
Method for cutting wafer Download PDFInfo
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- CN109065444A CN109065444A CN201810884978.7A CN201810884978A CN109065444A CN 109065444 A CN109065444 A CN 109065444A CN 201810884978 A CN201810884978 A CN 201810884978A CN 109065444 A CN109065444 A CN 109065444A
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- 238000005520 cutting process Methods 0.000 title claims abstract description 121
- 238000000034 method Methods 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 claims abstract description 34
- 238000003698 laser cutting Methods 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 239000010410 layer Substances 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 6
- 230000001771 impaired effect Effects 0.000 claims description 6
- 239000000498 cooling water Substances 0.000 claims description 5
- 239000011241 protective layer Substances 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000000407 epitaxy Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 143
- 229910002601 GaN Inorganic materials 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 239000007767 bonding agent Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 206010037660 Pyrexia Diseases 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000013467 fragmentation Methods 0.000 description 2
- 238000006062 fragmentation reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Abstract
This disclosure relates to technical field of semiconductors, in particular to a kind of method for cutting wafer.The method for cutting wafer includes: the face paste scribing film in the non-making devices of wafer to be cut；Using at least two laser beams, there is the one side of the device to be cut at least twice in the wafer manufacturing, forms the scribe line between device on the wafer；The wafer is cut along the scribe line using saw blade.To improve wafer cutting quality.
Description
Technical field
This disclosure relates to technical field of semiconductors, in particular to a kind of method for cutting wafer.
Background technique
Wafer refers to silicon wafer used in silicon semiconductor production of integrated circuits, can be processed be fabricated to various electricity on silicon
Circuit component structure, and become integrated circuit (Integrated Circuit, the IC) device for having specific electrical functionality.It is past on wafer
Toward multiple devices are integrated with, when needing to isolate individual devices, need to cut wafer.And according to the metal deposited
Difference, it is more to be formed by wafer type, some of them wafer, as cvd nitride gallium GaN is formed by wafer fusing point and hardness
Higher, the cutting quality cut for this kind of wafer is to be improved.
Summary of the invention
In view of this, the disclosure is designed to provide a kind of method for cutting wafer.
In a first aspect, the disclosure provides a kind of method for cutting wafer, comprising:
In a face paste scribing film of the non-making devices of wafer to be cut；
Using at least two laser beams, there is the one side of the device to be cut at least twice in the wafer manufacturing,
The scribe line between the device is formed on the wafer；
The wafer is cut along the scribe line using saw blade.
Optionally, using at least two laser beams, the one side of the device carries out at least twice in the wafer manufacturing
Cutting, in the step of forming the scribe line between the device on the wafer, comprising:
Using first laser beam, there is the laser cutting that carries out on one side of the device to form cutting groove in the wafer manufacturing；
Using second laser beam, it is cut by laser in the position that the wafer forms the cutting groove, is cut described in removal
The metal layer in slot is cut, the scribe line between the device is formed；
Wherein, the width of light beam of the first laser beam is greater than the width of light beam of the second laser beam.
Optionally, using second laser beam, in time that the position that the wafer forms the cutting groove is cut by laser
Number is greater than or equal to twice, and the depth of the scribe line of formation is greater than or equal to 20um.
Optionally, the radium-shine power of the first laser beam is 2.4W~3W, and frequency is 120~140Khz, speed 100
~200mm/s；The radium-shine power of the second laser beam be 3W~4.5W, frequency be 40~80Khz, speed be 100~
200mm/s。
Optionally, at least two laser beam is the laser beam of 355nm wavelength, and at least two laser beam successively leads to
Light-collecting prism cover is crossed at the position that the wafer manufacturing has between the one side of the device, device, so that illuminated
The substance sublimates of position or evaporation, to form scribe line between the device of the wafer.
Optionally, at least two laser beams are being used, is thering is the one side of the device to carry out at least two in the wafer manufacturing
Before secondary cutting, the method also includes: in the surface of wafer coating protection liquid.
Optionally, before a face paste scribing film of the non-making devices of wafer to be cut, the method also includes:
There is the one side of the device that protective layer is set in the wafer manufacturing, to prevent in the non-making devices of the wafer
When one face paste scribing film, the device on the wafer is impaired.
Optionally, the wafer to be cut is made by following steps:
Silicon substrate is provided；
GaN layer is prepared using metal-organic chemical vapor deposition equipment method epitaxy technology on the silicon substrate, is formed to be cut
The GaN wafer cut.
Optionally, the step of wafer being cut along the scribe line using saw blade, comprising:
Using saw blade, using the stair step fashion and cooling fin scribing process of twin shaft dicing technique along the scribe line to institute
It states wafer to be cut, the saw blade for executing cutting is cooled down using cooling water in cutting process.
Second aspect, the disclosure also provide a kind of method for cutting wafer, comprising:
In a face paste scribing film of the non-making devices of wafer to be cut；
Using first laser beam, there is the laser cutting that carries out on one side of the device to form cutting groove in the wafer manufacturing；
It using second laser beam, is cut by laser twice in the position that the wafer forms the cutting groove, removes institute
The metal layer in cutting groove is stated, the scribe line between the device is formed；
The wafer is cut along the scribe line using saw blade.
The disclosure provide method for cutting wafer, first using at least two laser beams wafer manufacturing have the one side of device into
Row is cut at least twice, and the scribe line between device is formed on wafer, then uses saw blade along scribe line to crystalline substance again
Circle is cut, and cutting quality is significantly improved.
Detailed description of the invention
In order to illustrate more clearly of the technical solution of the disclosure, letter will be made to attached drawing needed in the embodiment below
Singly introduce.It should be appreciated that the following drawings illustrates only some embodiments of the disclosure, therefore it is not construed as to range
It limits, it for those of ordinary skill in the art, without creative efforts, can also be according to these attached drawings
Obtain other relevant attached drawings.
Fig. 1 is the flow diagram for the method for cutting wafer that the disclosure provides.
Fig. 2 a is the structural schematic diagram for the wafer that the disclosure provides.
Fig. 2 b is the structural schematic diagram after the bonding wafer scribing film that the disclosure provides.
Fig. 2 c is the schematic diagram be cut by laser that the disclosure provides.
Fig. 2 d is the structural schematic diagram after the wafer completion laser cutting that the disclosure provides.
Fig. 2 e is the schematic diagram that cutting is synchronized using multiple laser that the disclosure provides.
Fig. 2 f is the schematic diagram that the stair step fashion using twin shaft dicing technique that the disclosure provides is cut along scribe line.
Fig. 3 is the A cut mode schematic diagram for the scribing machine that the disclosure provides.
Fig. 4 is another flow diagram for the method for cutting wafer that the disclosure provides.
Icon: 20- device；21- silicon substrate；22-GaN layers；23- scribing film；30- saw street；31- first laser beam；
32- second laser beam.
Specific embodiment
With the fast development of semiconductor field, have forbidden bandwidth big, breakdown voltage is high, and thermal conductivity is high, electronics saturation
Drift velocity is high, the metal of the superior property and superpower capability of resistance to radiation such as chemical stability good (hardly by any acid corrosion)
It is used to be deposited on substrate to form wafer.It is formed by wafer fusing point and hardness is higher, so that wafer cutting difficulty is big, and cut
It is to be improved to cut quality.
For example, the application of gallium nitride GaN material is the hot spot of current global semiconductor.GaN material is that theory powers on so far
One of light and the highest tech materials of photoelectric conversion efficiency, in opto-electronic device, power electronics, high temperature high power device and high frequency
The application aspects such as microwave device have a extensive future.
GaN is extremely stable compound, and is hard materials with high melting point, and hardness is very high and wear-resisting property is good, so that
The cutting of GaN wafer (GaN wafer) has very big challenge.It is mechanically cut according to saw blade, it is easy to so that GaN
Device surface fragmentation on wafer, and cutting speed is slower.It is cut according to high power solid-state laser, laser need to be used
Irradiation repeatedly, is realized wafer and is cut entirely to cut the scribing film of the non-making devices side of wafer.Required laser power is high, and
Repeatedly in crystal column surface scorification, heat affecting is larger.
Based on the studies above, the disclosure provides a kind of method for cutting wafer, first using at least two laser beams in wafer system
Work has the one side of device to be cut at least twice, forms the scribe line between device on wafer, then uses and draw again
Piece knife cuts wafer along scribe line, to improve cutting quality, and significantly improves cutting efficiency.
For defect present in above scheme, be inventor being obtained after practicing and carefully studying as a result,
Therefore, the discovery procedure of the above problem and the solution that hereinafter disclosure is proposed regarding to the issue above all should be
The contribution that inventor makes the disclosure during disclosure.
Below in conjunction with the attached drawing in the disclosure, the technical solution in the disclosure is clearly and completely described.It is aobvious
So, described embodiment is only a part of this disclosure embodiment, instead of all the embodiments.Usual attached drawing here
Described and illustrated in the component of the disclosure can arrange and design with a variety of different configurations.
Therefore, the detailed description of the embodiment of the disclosure provided in the accompanying drawings is not intended to limit below claimed
The scope of the present disclosure, but be merely representative of the selected embodiment of the disclosure.Based on embodiment of the disclosure, those skilled in the art
Member's every other embodiment obtained without making creative work, belongs to the range of disclosure protection.
It should also be noted that similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined in a attached drawing, does not then need that it is further defined and explained in subsequent attached drawing.
Referring to Fig. 1, the disclosure provides a kind of method for cutting wafer, realized by following steps.
Step S11, in a face paste scribing film of the non-making devices of wafer to be cut.
In the disclosure, the device on wafer can be chip, transistor etc..
The metal layer formed on the substrate and substrate of wafer can be with flexible choice.For example, wafer to be cut can be silicon
The GaN wafer of Si substrate.Correspondingly, as shown in Figure 2 a, wafer to be cut can be made in the following manner: provide silicon
Substrate 21 prepares GaN layer 22 using metal-organic chemical vapor deposition equipment method epitaxy technology on the silicon substrate 21, formed to
The GaN wafer of cutting has multiple devices 20 on GaN wafer.
The size of wafer to be cut, thickness and included 20 quantity of device are unlimited in the disclosure.
On wafer, usually have it is multiple, it is such as several hundred to connect together to many thousands of devices 20.It is stayed between each device 20
There is certain interval, this gap is referred to as saw street (Saw Street).By on wafer each with independent electrical performance
The process separated of device 20 be called scribing or cutting (Dicing Saw).
Fig. 2 b is please referred to, scribing film 23 is also known as bearing film (Mounting Tape), viscous before carrying out wafer cutting
It is attached to the back side (one side of the non-making devices 20 of wafer) of wafer.
Scribing film 23 is used for after completing wafer cutting technique, and the device 20 being separated from each other is still secured to scribing film
Subsequent bonding die process is completed on 23 in order to pass through automatic die Bonder (Die Bonder) etc..The viscosity of scribing film 23 is to wafer
It is a key property for cut quality.It is demonstrated experimentally that higher 23 cohesive force of scribing film can effectively lower wafer back
Face collapses angle.On the other hand, in bonding die process, and wish that the bonding force between scribing film 23 and wafer is as small as possible, in this way
Bonding die process can just obtain a steady process window, be arranged excessively high to avoid jack-up needle (Ejector Pin) or pick up
Too long the problem of causing the potential fracture of device 20 and production efficiency to reduce is arranged in the piece time (Pick up time).
Cutting and two processes of bonding die in order to balance, optionally, the disclosure use ultraviolet light (Ultraviolet) UV scribing
The model of film, the UV scribing film is unlimited.
Since when pasting scribing film 23, the front (one side that wafer manufacturing has device 20) of wafer can bear certain pressure, it is
Prevent device 20 impaired, such as galled spots, route are impaired, optionally, the one of the non-making devices 20 of wafer to be cut
Before face paste scribing film 23, also protective layer can be set on one side what wafer manufacturing had a device 20, to prevent in the non-making devices of wafer
When a 20 face paste scribing film 23, the device 20 on wafer is impaired.Wherein, protective layer can be with flexible choice, as long as can preventer
Part 20 is impaired.For example, anti-static dust-free paper can be selected.
Step S12 has the one side of the device 20 to carry out at least two using at least two laser beams in the wafer manufacturing
Secondary cutting forms the scribe line between the device 20 on the wafer.
In view of that can generate detritus in carrying out laser cutting process, the detritus of generation is adhered to more difficult after crystal column surface go
It removes, in some instances it may even be possible to generate contamination and leakage current etc., in order to further increase cutting quality, optionally, swash using at least two
Light beam first coats on the surface of wafer before the one side that the wafer manufacturing has the device 20 cut at least twice
Liquid is protected, such as has the one side coating protection liquid of device 20 in wafer manufacturing.The protection liquid of liquid is coated in crystal column surface, shape
At a protective layer, it on the one hand can prevent device 20 from polluting, on the other hand can play cooling effect.
Optionally, the disclosure can have the one side of device 20 using two kinds of laser beams, three kinds of laser beams etc. in wafer manufacturing
Carry out at least twice, three inferior cuttings.
Fig. 2 c is please referred to, for example, first laser beam 31 can be used first, has the device 20 in the wafer manufacturing
Carry out on one side laser cutting form cutting groove, then use second laser beam 32, form the cutting groove in the wafer
Position is cut by laser, and the metal layer in the cutting groove is removed, and forms the scribe line between the device 20.Its
In, the width of light beam of the first laser beam 31 is greater than the width of light beam of the second laser beam 32.It is wider by width of light beam
First laser beam 31 cutting groove is formed on wafer, then reuse the second narrower first laser beam 31 of width of light beam in crystalline substance
Circle forms the position further progress laser cutting of cutting groove, to form scribe line.Optionally, using second laser beam 32 in crystalline substance
The number that the position that circle forms cutting groove is cut by laser is greater than or equal to twice, is such as equal to twice.To effectively remove cutting
Metal layer in slot forms the scribe line that depth is greater than or equal to 20um.
Fig. 2 d is please referred to, first laser beam 31 is used to form the depth of cutting groove on wafer for L1, using second
It is L2 that laser beam 32, which carries out the depth formed after first time laser cutting in the position that wafer forms cutting groove, using second laser
The depth that beam 32 is formed after the position that wafer forms cutting groove carries out second being cut by laser is L3, is greater than to form depth
Or the scribe line equal to 20um.
In another example can also there is the one side of device 20 to be cut more than three times in wafer manufacturing using three kinds of laser beams,
The first laser beam such as can be first used, has the laser cutting that carries out on one side of the device 20 to form cutting in the wafer manufacturing
Then slot uses the dual-laser beam 2, is cut by laser in the position that the wafer forms the cutting groove, increase cutting
Depth reuses the third laser beam later, continues to be cut by laser in the position that the wafer forms the cutting groove, into
One step increases depth of cut, removes the metal layer in cutting groove, forms the scribe line between the device 20.Wherein,
A kind of width of light beam of laser beam is greater than the width of light beam of second of laser beam, and the width of light beam of second of laser beam is greater than third
The width of light beam of kind laser beam.
It is cut in view of using laser beam and saw blade to complete wafer jointly in the disclosure, thus uses laser beam in the disclosure
The number cut is less than the cutting times that wafer cutting is individually completed using laser beam, can reduce heat affecting, and with
It individually completes wafer cutting using saw blade to compare, use laser beam and saw blade to complete that wafer cuts jointly in the disclosure can be with
Reduce by 20 fragmentation probability of device caused by cutting.
In order to further decrease heat affecting caused by laser cutting, optionally, the disclosure uses low-power such as 1~10W
The laser beam of range cuts wafer.For example, first laser beam 31, second laser beam 32 etc. all can be 355nm wavelength
Laser beam.At least two laser beams of 355nm wavelength are successively passed through light-collecting prism cover to be had in the wafer manufacturing
At position between the one side of the device 20, device 20, so that the substance sublimates of illuminated position or evaporation, thus in institute
It states and forms scribe line between the device 20 of wafer.It is shone as first concentrated the first laser beam 31 of 355nm wavelength by light-collecting prism
It penetrates at the position between one side that the wafer manufacturing has the device 20, device 20, forms cutting groove.Then by 355nm
The second laser beam 32 of wavelength forms the position of cutting groove by light-collecting prism cover in wafer, to remove in cutting groove
Metal layer, form scribe line between device 20.
As a kind of optional implementation, in the step, selection can cut 8 inches or more wafers full-automatic
Laser cutting machine, using the laser beam of 355nm wavelength, by small between device 20 in light-collecting prism cover to wafer
Area (above-mentioned saw street) on, so that solid matter on wafer between device 20 is distilled or evaporation, to reach fluting
The purpose of cutting.The radium-shine power that Full-automatic laser cutting machine emits first laser beam 31 can be 2.4W~3W, and frequency can be with
For 120~140Khz, speed can be 100~200mm/s.Full-automatic laser cutting machine emits the radium of the second laser beam 32
Penetrating power can be 3W~4.5W, and frequency can be 40~80Khz, and speed can be 100~200mm/s.For example, can use
Full-automatic laser cutting machine DEL7000 series, laser head use FX type, Yttrium aluminium garnet laser crystal (Yttrium
Aluminum Garnet) launch wavelength 355nm impulse wave.Using non-fever processing method, that is, short-pulse laser cutting technique
Remove above-mentioned saw street 30, metal line and oxide also known as on Cutting Road can be maximum in fluting process
It excludes to limit because of influence caused by fever, and then ensures that wafer cuts quality.
Can uniformly arrange multiple rows of device 20 on wafer to be cut, and the spacing between each device 20 is identical.In this kind
In the case of, it, can be with the identical laser beam of disposable multiple spacing to multiple rows of device on wafer in order to improve cutting efficiency
20 are cut, the pitch match in the spacing and wafer between adjacent laser beams between adjacent devices 20, so as to primary
Property, which is respectively arranged the gap between device 20 along wafer using multiple laser beams and synchronized to multiple rows of device 20 on wafer, cuts,
And then significantly improve cutting efficiency.
For example, if the size of individual devices 20 is less than 25~45um on wafer, it is possible to use multiple spacing for 25~
The first laser beam 31 of 45um has the laser cutting that carries out on one side of device 20 to form cutting groove, then using more in wafer manufacturing
A spacing is the second laser beam 32 of 25~45um, is cut by laser in the position that wafer forms cutting groove, removes cutting groove
In metal layer, form scribe line between device 20.It is verified, use radium-shine power for 2.4W~3W, frequency 120
~140Khz, speed are 100~200mm/s, and spacing is the first laser beam 31 of 25~45um, have device in GaN wafer manufacturing
20 laser cutting that carries out on one side forms cutting groove, the use of radium-shine power is then 3W~4.5W, frequency is 40~80Khz, speed
Degree is 100~200mm/s, and spacing is the second laser beam 32 of 25~45um, is swashed in the position that GaN wafer forms cutting groove
Light cutting, the scribe line depth value being formed between device 20 is 20~25um, can effectively remove the GaN of GaN crystal column surface
Metal layer.Fig. 2 e is please referred to, in the scene shown in Fig. 2 e, four beam laser beams drawing between device 20 can be directly used
Piece block 30 synchronizes cutting, to complete the cutting to three row's devices 20.
Step S13 cuts the wafer along the scribe line using saw blade.
After forming scribe line using laser beam, wafer is cut along scribe line using saw blade, can be formed
Crystal grain including individual devices 20.
Optionally, saw blade can be used in the disclosure, stair step fashion and cooling fin scribing using twin shaft dicing technique
Technique cuts the wafer along the scribe line, in cutting process using cooling water to execute cutting saw blade into
Row cooling.For example, using the stair step fashion of twin shaft dicing technique on the Full Auto Dicing Saw that can cut 8 inches or more wafers
It is cut with cooling fin scribing process along scribe line.With no restriction, fluting is being completed when cutting in Full Auto Dicing Saw model
Scribe line in be further continued for cutting using saw blade.Due to wafer, the material hardness such as GaN wafer is higher, full-automatic to draw
Saw blade on piece machine can be using granular size in 3000#~3500#, and the diamond scribing knife may include 82.5%
Bonding agent and 17.5% diamond, and use standard bonding agent, standard bonding agent may include the plating using Ni nickel material
Type bonding agent.The saw blade cutting force is stronger, and scribing overload phenomenon can be effectively reduced in cutting process.
As a kind of optional realization structure, Full Auto Dicing Saw includes that workbench, axis Z1 and axis Z2, wafer are placed in work
On platform, it is respectively fitted with saw blade on axis Z1 and axis Z2, saw blade carries out the wafer on workbench under the drive of corresponding axis
Cutting.Wherein it is possible to the revolving speed Z1 of setting shaft Z1 is 35000~45000rpm/min, the revolving speed Z2 of axis Z2 is 35000~
40000rpm/min, saw blade cutting speed are 30~40mm/s.Wherein it is possible to saw blade on flexible setting shaft Z1 and axis Z2
Cutting thickness, for example, the cutting thickness of saw blade can be 1/2 wafer thickness on axis Z2.Fig. 2 f is please referred to, for using double
The schematic diagram that the stair step fashion of axis dicing technique is cut along scribe line, Full Auto Dicing Saw can drive scribing by axis Z1
Knife cuts first thickness in scribe line, then drives saw blade to continue to cut second thickness in scribe line by axis Z2, from
And complete the cutting to wafer.Cool down it using cooling water, Full Auto Dicing Saw in cutting process in saw blade
On water flow cutting amount can be sized to cooling water/injection/spray 1.5/1.5/1.5L/min.Effectively to cool down scribing
Knife, and play silicon bits and drain unobstructed purpose.Optionally, twin shaft dicing technique cutting can use A blanking punch shown in Fig. 3
Formula, wherein the moving direction of the workbench of Full Auto Dicing Saw is identical as the cut direction of the saw blade under the drive of axis.
The wafer of cutting is completed in step S14, cleaning, and is dried.
After completing wafer cutting, pass through the particle or metal residue of the crystal column surface after cleaning removal cutting.It can
To use automatic flushing device, the foreign matter on cleaning disk through two fluids (compression control and water mixing) cleaning wafer surface is miscellaneous
Matter.In the case where the surface of wafer is coated with protection liquid, the particle or metal residue of crystal column surface can be with protection liquid
It is easily removed together clean.It after completing cleaning, is dried, then executes subsequent step S15.
Step S15, the viscosity degraded between the scribing film 23 and wafer.
According to the difference of used scribing film 23, can be degraded by different modes viscous between scribing film 23 and wafer
Property.For example, using UV scribing film scribing film 23 can be irradiated using ultraviolet light, thus degrade scribing film 23 with
Viscosity between wafer.Such as scribing film 23 can be irradiated by UV lamp pipe, the viscosity of wafer and UV scribing film be reduced, to guarantee
The working ability of follow-up process.
On the basis of the above, Fig. 4 is please referred to, the disclosure also provides a kind of method for cutting wafer, includes the following steps.
Step S21, in a face paste scribing film of the non-making devices of wafer to be cut.
Step S22 carries out laser cutting formation what the wafer manufacturing had a device using first laser beam on one side
Cutting groove.
Step S23 is carried out laser twice in the position that the wafer forms the cutting groove and is cut using second laser beam
It cuts, removes the metal layer in the cutting groove, form the scribe line between the device.
Step S24 cuts the wafer along the scribe line using saw blade.
In the disclosure, is realized using step S21 to step S24 and realized in the implementation process and principle and Fig. 1 of wafer cutting
The implementation process of wafer cutting is similar with principle, corresponding to realize that details be refering to foregoing description, thus therefore not to repeat here.
The disclosure provide method for cutting wafer, first using at least two laser beams wafer manufacturing have the one side of device into
Row is cut at least twice, is such as first carried out cutting on wafer using the relatively narrow first laser beam of width of light beam and is formed cutting groove, so
It is cut by laser again using the wider second laser beam of width of light beam in the position that wafer forms cutting groove afterwards, removes cutting groove
In metal layer, form scribe line between device, and then cut along scribe line to wafer using saw blade
Complete individual devices separation.It is more convenient to realize, significantly improves cutting quality, mentions for the mass production of subsequent electronics
Technical guarantee is supplied.
In the description of the disclosure, it should be noted that unless otherwise clearly defined and limited, term " setting ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected.It can
To be mechanical connection, it is also possible to be electrically connected.It can be directly connected, can also indirectly connected through an intermediary, it can be with
It is the connection inside two elements.For the ordinary skill in the art, it can understand that above-mentioned term exists with concrete condition
Concrete meaning in the disclosure.
In the description of the disclosure, it is also necessary to explanation, the orientation of the instructions such as term " on ", "lower", "inner", "outside" or
Positional relationship be based on the orientation or positional relationship shown in the drawings or the invention product using when the orientation usually put or
Positional relationship is merely for convenience of the description disclosure and simplifies description, rather than the device or element of indication or suggestion meaning must
There must be specific orientation, be constructed and operated in a specific orientation, therefore should not be understood as the limitation to the disclosure.
The foregoing is merely preferred embodiment of the present disclosure, are not limited to the disclosure, for the skill of this field
For art personnel, the disclosure can have various modifications and variations.It is all within the spirit and principle of the disclosure, it is made any to repair
Change, equivalent replacement, improvement etc., should be included within the protection scope of the disclosure.
Claims (10)
1. a kind of method for cutting wafer characterized by comprising
In a face paste scribing film of the non-making devices of wafer to be cut；
Using at least two laser beams, there is the one side of the device to be cut at least twice in the wafer manufacturing, described
The scribe line between the device is formed on wafer；
The wafer is cut along the scribe line using saw blade.
2. method for cutting wafer according to claim 1, which is characterized in that at least two laser beams are used, in the crystalline substance
Circle production has the one side of the device to be cut at least twice, and the scribing between the device is formed on the wafer
The step of slot, comprising:
Using first laser beam, there is the laser cutting that carries out on one side of the device to form cutting groove in the wafer manufacturing；
Using second laser beam, it is cut by laser in the position that the wafer forms the cutting groove, removes the cutting groove
In metal layer, form scribe line between the device；
Wherein, the width of light beam of the first laser beam is greater than the width of light beam of the second laser beam.
3. method for cutting wafer according to claim 2, which is characterized in that second laser beam is used, in the wafer shape
It is greater than or equal to twice at the number that the position of the cutting groove is cut by laser, the depth of the scribe line of formation is greater than
Or it is equal to 20um.
4. method for cutting wafer according to claim 2, which is characterized in that the radium-shine power of the first laser beam is
2.4W~3W, frequency are 120~140Khz, and speed is 100~200mm/s；The radium-shine power of the second laser beam be 3W~
4.5W, frequency are 40~80Khz, and speed is 100~200mm/s.
5. method for cutting wafer according to claim 1, which is characterized in that at least two laser beam is 355nm wave
Long laser beam, at least two laser beam, which successively passes through light-collecting prism cover, has the device in the wafer manufacturing
One side, at the position between device so that the substance sublimates of illuminated position or evaporation, thus in the device of the wafer
Between form scribe line.
6. method for cutting wafer according to claim 1, which is characterized in that at least two laser beams are being used, described
Before wafer manufacturing has the one side of the device cut at least twice, the method also includes: on the surface of the wafer
Coating protection liquid.
7. method for cutting wafer according to claim 1, which is characterized in that the one of the non-making devices of wafer to be cut
Before face paste scribing film, the method also includes:
There is the one side of the device that protective layer is set in the wafer manufacturing, to prevent the one side in the non-making devices of the wafer
When pasting scribing film, the device on the wafer is impaired.
8. method for cutting wafer according to claim 1, which is characterized in that the wafer to be cut passes through following steps
It is made:
Silicon substrate is provided；
GaN layer is prepared using metal-organic chemical vapor deposition equipment method epitaxy technology on the silicon substrate, is formed to be cut
GaN wafer.
9. method for cutting wafer according to claim 1, which is characterized in that using saw blade along the scribe line to described
The step of wafer is cut, comprising:
Using saw blade, using the stair step fashion and cooling fin scribing process of twin shaft dicing technique along the scribe line to the crystalline substance
Circle is cut, and is cooled down using cooling water to the saw blade for executing cutting in cutting process.
10. a kind of method for cutting wafer characterized by comprising
In a face paste scribing film of the non-making devices of wafer to be cut；
Using first laser beam, there is the laser cutting that carries out on one side of the device to form cutting groove in the wafer manufacturing；
Using second laser beam, it is cut by laser in the position that the wafer forms the cutting groove, is cut described in removal twice
The metal layer in slot is cut, the scribe line between the device is formed；
The wafer is cut along the scribe line using saw blade.
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| CN201810884978.7A CN109065444A (en) | 2018-08-06 | 2018-08-06 | Method for cutting wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810884978.7A CN109065444A (en) | 2018-08-06 | 2018-08-06 | Method for cutting wafer |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109904119A (en) * | 2019-01-24 | 2019-06-18 | 上海南麟电子股份有限公司 | A kind of preparation method of chip |
| CN110085554A (en) * | 2019-05-16 | 2019-08-02 | 强茂电子(无锡)有限公司 | A kind of cutting method of glass passivated silicon wafer |
| CN112447590A (en) * | 2019-08-30 | 2021-03-05 | 中国科学院沈阳自动化研究所 | Wafer scribing method based on water-guided laser processing technology |
| CN113953689A (en) * | 2021-12-16 | 2022-01-21 | 湖北三维半导体集成创新中心有限责任公司 | Wafer cutting method |
| JP2022067118A (en) * | 2020-02-21 | 2022-05-02 | ヌヴォトンテクノロジージャパン株式会社 | Individualization method |
| CN114571616A (en) * | 2022-02-18 | 2022-06-03 | 华虹半导体(无锡)有限公司 | Wafer ring removing device and ring removing method |
| CN115890021A (en) * | 2023-01-05 | 2023-04-04 | 成都功成半导体有限公司 | Wafer laser cutting method and wafer |
| CN117020446A (en) * | 2023-10-09 | 2023-11-10 | 江苏芯德半导体科技有限公司 | Cutting method of silicon substrate gallium nitride wafer |
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2018
- 2018-08-06 CN CN201810884978.7A patent/CN109065444A/en not_active Withdrawn
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109904119A (en) * | 2019-01-24 | 2019-06-18 | 上海南麟电子股份有限公司 | A kind of preparation method of chip |
| CN110085554A (en) * | 2019-05-16 | 2019-08-02 | 强茂电子(无锡)有限公司 | A kind of cutting method of glass passivated silicon wafer |
| CN112447590A (en) * | 2019-08-30 | 2021-03-05 | 中国科学院沈阳自动化研究所 | Wafer scribing method based on water-guided laser processing technology |
| CN112447590B (en) * | 2019-08-30 | 2023-08-22 | 中国科学院沈阳自动化研究所 | Wafer dicing method based on water-guided laser processing technology |
| JP2022067118A (en) * | 2020-02-21 | 2022-05-02 | ヌヴォトンテクノロジージャパン株式会社 | Individualization method |
| CN113953689A (en) * | 2021-12-16 | 2022-01-21 | 湖北三维半导体集成创新中心有限责任公司 | Wafer cutting method |
| CN114571616A (en) * | 2022-02-18 | 2022-06-03 | 华虹半导体(无锡)有限公司 | Wafer ring removing device and ring removing method |
| CN115890021A (en) * | 2023-01-05 | 2023-04-04 | 成都功成半导体有限公司 | Wafer laser cutting method and wafer |
| CN117020446A (en) * | 2023-10-09 | 2023-11-10 | 江苏芯德半导体科技有限公司 | Cutting method of silicon substrate gallium nitride wafer |
| CN117020446B (en) * | 2023-10-09 | 2023-12-26 | 江苏芯德半导体科技有限公司 | Cutting method of silicon substrate gallium nitride wafer |
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