CN109062432B - Flexible touch panel and preparation method thereof - Google Patents
Flexible touch panel and preparation method thereof Download PDFInfo
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- CN109062432B CN109062432B CN201810810749.0A CN201810810749A CN109062432B CN 109062432 B CN109062432 B CN 109062432B CN 201810810749 A CN201810810749 A CN 201810810749A CN 109062432 B CN109062432 B CN 109062432B
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04102—Flexible digitiser, i.e. constructional details for allowing the whole digitising part of a device to be flexed or rolled like a sheet of paper
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
Abstract
The invention relates to a flexible touch panel and a preparation method thereof. A preparation method of a flexible touch panel comprises the following steps: obtaining a flexible substrate, wherein the flexible substrate is provided with a first surface and a second surface opposite to the first surface; carrying out roughening treatment on the first surface; forming a first silicon dioxide layer on the first surface subjected to the roughening treatment by sputtering; sputtering one surface of the first silicon dioxide layer far away from the first surface to form a silver layer; and carrying out yellow light process treatment on the silver layer to form a touch electrode layer. The flexible touch panel prepared by the preparation method of the flexible touch panel has good bending resistance, the touch electrode layer still has good hardness, flexibility and adhesive force after repeated bending, and the resistance change rate of the flexible touch panel is small when the flexible touch panel is bent.
Description
Technical Field
The invention relates to the technical field of touch control, in particular to a flexible touch panel and a preparation method thereof.
Background
Compared with an LCD screen, the flexible organic screen is lighter and thinner in size and lower in power consumption, the cruising ability of the equipment is improved, and meanwhile, due to the fact that the OLED has the characteristics of being bendable and good in flexibility, the durability of the flexible organic screen is larger than that of the traditional screen, and the probability of accidental damage of the equipment is reduced. After samsung and LG released the first batch of bent-screen handsets, there would be more terminal manufacturers to follow this market. The curved screen is the new first step in progressive screen technology, and in the coming years, a flexible, bendable, foldable, rollable screen will be familiar with boarding. In 3-5 years, the flexible OLED screen is expected to be applied to mobile phones and wearable intelligent products on a large scale.
With the continuous development and improvement of the technology of the curved screen with fixed curvature, the flexible touch screen capable of realizing arbitrary bending is bound to become an important development direction. At present, a nano silver technology is adopted for preparing a flexible touch panel in many ways, and the nano silver technology is to paint a nano silver ink material on a flexible substrate, and then utilize a laser lithography technology to carve and manufacture a silver wire conductive network with a nano level, so as to obtain the flexible touch panel. When the flexible touch panel prepared by the method is repeatedly bent, the hardening agent in the nano silver coating causes cracking, hardness reduction, flexibility reduction and poor adhesion of the touch layer, and further causes resistivity increase, thereby affecting the use of the flexible touch panel.
Disclosure of Invention
Therefore, there is a need for a method for manufacturing a flexible touch panel, where the flexible touch panel manufactured by the method has good bending resistance, the touch electrode layer has good hardness, flexibility and adhesion even after repeated bending, and the flexible touch panel has a small resistance change rate during bending.
In addition, the flexible touch panel prepared by the preparation method of the flexible touch panel is also provided.
A preparation method of a flexible touch panel comprises the following steps:
obtaining a flexible substrate, wherein the flexible substrate is provided with a first surface and a second surface opposite to the first surface;
carrying out roughening treatment on the first surface;
forming a first silicon dioxide layer on the first surface subjected to the roughening treatment by sputtering;
sputtering one surface of the first silicon dioxide layer far away from the first surface to form a silver layer; and
and carrying out yellow light process treatment on the silver layer to form a touch electrode layer.
In one embodiment, the material of the flexible substrate is selected from at least one of polyethylene terephthalate and polyimide;
and/or the thickness of the flexible substrate is 0.01 mm-0.5 mm.
In one embodiment, the first surface is roughened by reactive ion etching, and the roughening is performed on the CF4And O2Under a mixed gas atmosphere of (5) CF4The gas flow rate of (1) is 200sccm to 300sccm, O2At a gas flow rate of100sccm to 200 sccm; the power of reactive ion etching during the roughening treatment is 60W-80W, and the roughening treatment time is 2 min-4 min.
In one embodiment, the first surface is roughened to a roughness of 29nm to 33 nm.
In one embodiment, a first silicon dioxide layer is formed on the roughened first surface in a sputtering mode by adopting a magnetron sputtering mode, the power of the magnetron sputtering is 750W-1000W, the speed of the magnetron sputtering is 20 nm/min-30 nm/min, the flow rate of oxygen is 10 sccm-20 sccm, the flow rate of argon is 600 sccm-800 sccm, and the target base distance of the magnetron sputtering is 6 cm-10 cm;
and/or sputtering a surface of the first silicon dioxide layer far away from the first surface by adopting a magnetron sputtering mode to form a silver layer, wherein the power of the magnetron sputtering is 1500-3000W, the speed of the magnetron sputtering is 30-40 nm/min, the flow of oxygen is 60-100 sccm, the flow of argon is 800-1200 sccm, and the target base distance of the magnetron sputtering is 6-8 cm.
In one embodiment, the silver layer has a resistivity of 8 x 10-5Ω·cm～8*10-4Omega cm, the surface resistance of the silver is 38 omega/cm-42 omega/cm, and the transmittance of the silver layer is 93-96%.
In one embodiment, the thickness of the first silicon dioxide layer is 5nm to 10 nm;
and/or the thickness of the silver layer is 30-50 μm.
In one embodiment, the yellow light processing specifically comprises the following steps:
coating a photoresist layer on the silver layer;
after a mask plate is arranged on the photoresist layer, carrying out exposure treatment on the photoresist layer;
developing the photoresist layer subjected to the exposure treatment to remove the photoresist subjected to the exposure treatment; and
and etching the silver layer to obtain the touch electrode layer.
In one embodiment, the step of forming the touch electrode layer by performing the yellow light process on the silver layer further includes the steps of:
sputtering a titanium dioxide layer on the second surface; and
and sputtering the surface of the titanium dioxide layer far away from the second surface to form a second silicon dioxide layer.
A flexible touch panel is prepared by the preparation method of the flexible touch panel.
According to the preparation method of the flexible touch panel, the first surface of the flexible substrate is roughened, the adhesive force of other coatings on the flexible substrate can be increased, the first silicon dioxide layer is formed on the first surface in a sputtering mode, the silver layer is formed on the surface, far away from the flexible substrate, of the first silicon dioxide layer in a sputtering mode, the silver layer is etched in a processing mode through a yellow light process to form the touch electrode layer, the touch electrode layer is made of pure silver materials, the toughness of the pure silver materials is superior to that of doped silver materials, when the flexible touch panel is repeatedly bent, the touch electrode layer still has good adhesive force, cracking or falling cannot occur, and the touch electrode layer still has good hardness and low resistance change rate.
Drawings
Fig. 1 is a process flow diagram of a method for manufacturing a flexible touch panel according to an embodiment;
fig. 2 is a schematic structural diagram of a flexible touch panel according to an embodiment.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, but rather should be construed as broadly as the present invention is capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Referring to fig. 1, a method for manufacturing a flexible touch panel according to an embodiment includes the following steps:
and S110, obtaining the flexible substrate.
In one embodiment, the material of the flexible substrate is selected from at least one of polyethylene terephthalate (PET) and Polyimide (PI).
In one embodiment, the flexible substrate has a thickness of 0.01mm to 0.5 mm. Further, the thickness of the flexible substrate may also be 0.05mm, 0.1mm or 0.25 mm.
The flexible substrate is provided with a first surface and a second surface opposite to the first surface.
And S120, cleaning the flexible substrate.
In one embodiment, when the flexible substrate is cleaned, the flexible substrate is first scrubbed, and then the scrubbed flexible substrate is sequentially put into water and alcohol for ultrasonic cleaning. Further, the water is deionized water.
In one embodiment, the flexible substrate is subjected to ultrasonic cleaning and then dried in alcohol vapor.
And S130, roughening the first surface.
In one embodiment, the first surface is roughened by reactive ion etching.
In one embodiment, the first surface is roughened by reactive ion etching until the roughness of the first surface is 29nm to 33 nm.
In one embodiment, the first surface is roughened by reactive ion etching while CF is present4And O2Under a mixed gas atmosphere of (5) CF4The gas flow rate of (1) is 200sccm to 300sccm, O2The gas flow rate of the gas is 100sccm to 200 sccm.
In one embodiment, the power of reactive ion etching is 60W to 80W and the time of roughening is 2min to 4 min.
The first surface is roughened by reactive ion etching, so that holes can be formed on the first surface by etching, mechanical linkage is facilitated, and the adhesive force on the first surface is further improved. Meanwhile, the surface of the flexible substrate can be etched by adopting a reactive ion etching mode, so that the content ratio of oxygen to carbon and the content ratio of nitrogen to carbon on the surface of the flexible substrate are increased, and the content of polar groups such as C-O, C-N, C (O, C) or O-O groups on the surface of the flexible substrate is further increased, so that the hydrophilicity of the surface of the flexible substrate is obviously increased, and the improvement of the adhesive force is facilitated.
And S140, forming a first silicon dioxide layer on the roughened first surface in a sputtering mode.
In one embodiment, a first silicon dioxide layer is formed on the roughened first surface through sputtering by means of magnetron sputtering.
Furthermore, the power of magnetron sputtering is 750W-1000W, the speed of magnetron sputtering is 20 nm/min-30 nm/min, the flow of oxygen is 10 sccm-20 sccm, the flow of argon is 600 sccm-800 sccm, and the target base distance of magnetron sputtering is 6 cm-10 cm. Further, the purity of oxygen is not less than 99.999%, and the purity of argon is not less than 99.999%.
In one embodiment, the first silicon dioxide layer has a thickness of 5nm to 10 nm. Of course, the thickness of the first silicon dioxide layer may also be 6nm, 7nm, 8nm or 9 nm.
Generally, the flexible substrate is made of materials with good flexibility, such as polyethylene terephthalate and polyimide, and the thermal stability of the materials is relatively poor, so that when the touch electrode layer is formed by directly performing magnetron sputtering on the surface of the flexible substrate, the flexible substrate is prone to cracking and generating a large amount of gas, and therefore the first silicon dioxide layer is sputtered on the flexible substrate to play a role in blocking, and the flexible substrate is placed to find cracking.
And S150, sputtering one surface of the first silicon dioxide layer far away from the first surface to form a silver layer.
In one embodiment, a silver layer is formed on one side, far away from the first surface, of the first silicon dioxide layer by sputtering in a magnetron sputtering mode.
Furthermore, the power of magnetron sputtering is 1500W-3000W, the speed of magnetron sputtering is 30 nm/min-40 nm/min, the flow of oxygen is 60 sccm-100 sccm, the flow of argon is 800 sccm-1200 sccm, and the target base distance of magnetron sputtering is 6 cm-8 cm.
Further, the purity of oxygen is not less than 99.999%, and the purity of argon is not less than 99.999%.
In one embodiment, the silver layer has a thickness of 30 μm to 50 μm. The thickness of the silver layer may also be 35 μm, 40 μm or 45 μm.
In one embodiment, the silver layer has a resistivity of 8 x 10-5Ω·cm～8*10-4Omega cm, the surface resistance of the silver layer is 38 omega/cm-42 omega/cm, and the transmittance of the silver layer is 93-96%.
In one embodiment, step S130, step S140, and step S150 are performed in the same reaction apparatus, so that the number of transfer steps and the number of one-shot molding are reduced, thereby saving cost and improving yield.
And S160, carrying out yellow light process treatment on the silver layer to form a touch electrode layer.
In one embodiment, the touch electrode layer formed by performing the photolithography process on the silver layer includes a driving electrode Tx and a receiving electrode Rx. Furthermore, the driving electrodes Tx and the receiving electrodes Rx are arranged on the flexible substrate in a crisscross manner, the driving electrodes Tx and the receiving electrodes Rx are insulated from each other, and the intersections of the driving electrodes Tx and the receiving electrodes Rx are insulated from each other to form a touch sensing area.
In one embodiment, the step of performing a yellow light process on the silver layer to form the touch electrode layer specifically includes:
and S161, coating a photoresist layer on the silver layer.
And S162, setting a mask plate on the photoresist layer and then carrying out exposure treatment on the photoresist layer.
And S163, carrying out development treatment on the photoresist layer subjected to the exposure treatment to remove the photoresist subjected to the exposure treatment.
And S164, etching the silver layer to obtain the touch electrode layer.
In one embodiment, the thickness of the touch electrode layer is the same as the thickness of the silver layer.
S170, forming a protective layer on the surface of the touch electrode layer far away from the first silicon dioxide layer.
In one embodiment, the protective layer is a transparent optical adhesive (OC adhesive) layer.
In one embodiment, the protective layer is formed to a thickness of 30 μm to 40 μm.
And S180, forming a titanium dioxide layer on the second surface of the flexible substrate in a sputtering mode.
In one embodiment, a titanium dioxide layer is formed on the second surface of the flexible substrate by sputtering in a magnetron sputtering manner.
In one embodiment, the power of magnetron sputtering is 1000W-3000W, the speed of magnetron sputtering is 18 nm/min-23 nm/min, the flow rate of oxygen is 80 sccm-100 sccm, the flow rate of argon is 1150 sccm-1180 sccm, and the target base distance of magnetron sputtering is 6 cm-10 cm. Further, the purity of oxygen is not less than 99.999%, and the purity of argon is not less than 99.999%.
In one embodiment, the thickness of the titanium dioxide layer is 15nm to 25 nm. Of course, the thickness of the titanium dioxide layer can also be 17nm, 20nm or 23 nm.
And S190, forming a second silicon dioxide layer on one surface of the titanium dioxide layer far away from the second surface in a sputtering mode.
In one embodiment, a second silicon dioxide layer is formed on the surface, far away from the second surface, of the titanium dioxide layer by sputtering in a magnetron sputtering mode.
In one embodiment, the power of magnetron sputtering is 1000W-3000W, the speed of magnetron sputtering is 23 nm/min-28 nm/min, the flow rate of oxygen is 20 sccm-30 sccm, the flow rate of argon is 600 sccm-800 sccm, and the target base distance of magnetron sputtering is 6 cm-10 cm. Further, the purity of oxygen is not less than 99.999%, and the purity of argon is not less than 99.999%.
In one embodiment, the second silicon dioxide layer has a thickness of 25nm to 35 nm. Of course, the thickness of the second silicon dioxide layer can also be 27nm, 30nm or 33 nm.
Since the flexible substrate such as a PET substrate or a PI substrate has a high refractive index, which is much higher than the vacuum refractive index, reflection is easily formed on the flexible substrate; meanwhile, the touch electrode layer formed on the flexible substrate is composed of silver wires, the visibility of the silver wires is high, and the touch electrode layer is easy to reflect under light or strong light.
In one embodiment, the second surface is roughened by using reactive ions before the titanium dioxide layer is formed on the second surface by sputtering. The roughening process is the same as that in step S130, and is not described herein again.
According to the preparation method of the flexible touch panel, the first surface of the flexible substrate is roughened, the adhesive force of other coatings on the flexible substrate can be increased, the first silicon dioxide layer is formed on the first surface in a sputtering mode, the silver layer is formed on the surface, far away from the flexible substrate, of the first silicon dioxide layer in a sputtering mode, the silver layer is etched in a processing mode through a yellow light process to form the touch electrode layer, the touch electrode layer is made of pure silver materials, the toughness of the pure silver materials is superior to that of doped silver materials, when the flexible touch panel is repeatedly bent, the touch electrode layer still has good adhesive force, cracking or falling cannot occur, and the touch electrode layer still has good hardness and low resistance change rate.
Step S120, step S170, step S180, and step S190 may be omitted.
Referring to fig. 2, a flexible touch panel 100 according to an embodiment includes: the touch screen comprises a flexible substrate 110, a first silicon dioxide layer 120, a touch electrode layer 130, a protective layer 140, a titanium dioxide layer 150 and a second silicon dioxide layer 160. The flexible touch panel 100 is prepared by the above method for preparing a flexible touch panel.
In the illustrated embodiment, the flexible substrate 110 is a polyethylene terephthalate substrate or a polyimide substrate. The thickness of the flexible substrate 110 is 0.01mm to 0.5 mm. Further, the thickness of the flexible substrate may also be 0.05mm, 0.1mm or 0.25 mm. The flexible substrate 110 has a first surface and a second surface opposite to the first surface.
The first silicon dioxide layer 120 is stacked on the first surface of the flexible substrate 110. In the illustrated embodiment, the first silicon dioxide layer 120 has a thickness of 5nm to 10 nm. Of course, the thickness of the first silicon dioxide layer 120 may also be 6nm, 7nm, 8nm or 9 nm.
The touch electrode layer 130 is stacked on the surface of the first silicon dioxide layer 120 away from the flexible substrate 110, and the touch electrode layer 130 is formed by performing a yellow light process on a silver layer formed on the surface of the first silicon dioxide layer 120 by a magnetron sputtering method. The touch electrode layer 130 includes a driving electrode Tx and a receiving electrode Rx. Furthermore, the driving electrodes Tx and the receiving electrodes Rx are arranged on the flexible substrate in a crisscross manner, the driving electrodes Tx and the receiving electrodes Rx are insulated from each other, and the intersections of the driving electrodes Tx and the receiving electrodes Rx are insulated from each other to form a touch sensing area. In the illustrated embodiment, the touch electrode layer 130 has a thickness of 30 μm to 50 μm. Of course, the thickness of the touch electrode layer 130 may also be 35 μm, 40 μm, or 45 μm.
The passivation layer 140 is stacked on the surface of the touch electrode layer 130 away from the first silicon dioxide layer 120 to protect the touch electrode layer 130. The thickness of the protective layer 140 is 30 μm to 40 μm.
The titanium dioxide layer 150 is laminated on the second surface of the flexible substrate 110. The thickness of the titanium dioxide layer is 15 nm-25 nm. Of course, the thickness of the titanium dioxide layer 150 may also be 17nm, 20nm or 23 nm.
The second silicon dioxide layer 160 is laminated on the surface of the titanium dioxide layer 150 away from the flexible substrate 110, and the thickness of the second silicon dioxide layer 160 is 25nm to 35 nm. Of course, the thickness of the second silicon dioxide layer 160 may also be 27nm, 30nm or 33 nm.
The flexible touch panel has good bending resistance, still has good hardness, flexibility and adhesive force after being repeatedly bent, and has small resistance change rate during bending.
It should be noted that the protective layer 140, the titanium dioxide layer 150, and the second silicon dioxide layer 160 in the flexible touch panel 100 can be omitted.
The following are descriptions of specific examples, and unless otherwise specified, the following examples contain no other components not specifically mentioned except for inevitable impurities.
Example 1
The flexible touch panel of the embodiment is prepared by the following method:
(1) the method comprises the steps of obtaining a flexible substrate with the thickness of 0.1mm, wherein the flexible substrate is a polyethylene terephthalate substrate, cleaning the flexible substrate in a field, sequentially putting the flexible substrate into water and alcohol for ultrasonic cleaning, and then putting the flexible substrate into alcohol vapor for drying.
(2) Adopting a reactive ion etching mode to carry out roughening treatment on the first surface of the flexible substrate until the roughness of the first surface is 30.1nm, wherein the reactive ion etching power is 60W during roughening treatment, and CF during roughening treatment4And O2Under a mixed gas atmosphere of (5) CF4The gas flow rate of (1) is 250sccm, O2The gas flow rate of (2) was 200sccm, and the roughening treatment was performed for 3 min.
(3) And sputtering on the first surface by adopting a magnetron sputtering mode to form a first silicon dioxide layer, wherein the magnetron sputtering power is 750W, the magnetron sputtering rate is 25nm/min, the oxygen flow is 10sccm, the argon flow is 600sccm, the target base distance of the magnetron sputtering is 8cm, and the thickness of the first silicon dioxide layer is 5 nm.
(4) Sputtering a silver layer on one surface of the first silicon dioxide layer far away from the first surface by adopting a magnetron sputtering mode, wherein the power of the magnetron sputtering is 1600W, the rate of the magnetron sputtering is 35nm/min, the flow of oxygen is 80sccm, the flow of argon is 1000sccm, the target base distance of the magnetron sputtering is 7cm, the thickness of the silver layer is 35 mu m, and the resistivity of the silver layer is 8 x 10-5Omega cm, the surface resistance of the silver layer is 38 omega/cm, and the transmittance of the silver layer is 96 percent.
(5) Coating a photoresist layer on the silver layer, arranging a mask plate on the photoresist layer, exposing the photoresist layer, developing the exposed photoresist layer to remove the exposed photoresist, and etching the silver layer to obtain a touch electrode layer; the thickness of the touch electrode layer is 35 mu m; and then forming a protective layer with the thickness of 30 mu m on the touch electrode layer.
(6) Sputtering on the second surface of the flexible substrate to form a titanium dioxide layer by adopting a magnetron sputtering mode, wherein the magnetron sputtering power is 1000W, the magnetron sputtering rate is 20nm/min, the oxygen flow is 80sccm, the argon flow is 1180sccm, and the target base distance of magnetron sputtering is 8 cm; the thickness of the titanium dioxide layer was 15 nm.
(7) Sputtering on one surface of the titanium dioxide layer, which is far away from the second surface, to form a second silicon dioxide layer by adopting a magnetron sputtering mode, wherein the magnetron sputtering power is 2000W, the magnetron sputtering rate is 25nm/min, the oxygen flow is 30sccm, the argon flow is 800sccm, and the target base distance of magnetron sputtering is 8 cm; the thickness of the second silicon dioxide layer was 25 nm.
Example 2
The flexible touch panel of the embodiment is prepared by the following method:
(1) the method comprises the steps of obtaining a flexible substrate with the thickness of 0.1mm, wherein the flexible substrate is a polyethylene terephthalate substrate, cleaning the flexible substrate in a field, sequentially putting the flexible substrate into water and alcohol for ultrasonic cleaning, and then putting the flexible substrate into alcohol vapor for drying.
(2) Roughening the first surface of the flexible substrate by adopting a reactive ion etching mode until the roughness of the first surface is 33nm, wherein the reactive ion etching power is 75W during roughening, and CF during roughening4And O2Under a mixed gas atmosphere of (5) CF4The gas flow rate of (2) is 300sccm, O2The gas flow rate of (2) was 100sccm, and the roughening treatment was performed for 3 min.
(3) And sputtering on the first surface by adopting a magnetron sputtering mode to form a first silicon dioxide layer, wherein the magnetron sputtering power is 1000W, the magnetron sputtering rate is 25nm/min, the oxygen flow is 15sccm, the argon flow is 800sccm, the target base distance of the magnetron sputtering is 8cm, and the thickness of the first silicon dioxide layer is 7 nm.
(4) Sputtering a silver layer on one surface of the first silicon dioxide layer far away from the first surface by adopting a magnetron sputtering mode, wherein the power of the magnetron sputtering is 1500W, the rate of the magnetron sputtering is 30nm/min, the flow of oxygen is 60sccm, the flow of argon is 800sccm, the target base distance of the magnetron sputtering is 6cm, the thickness of the silver layer is 40 mu m, and the resistivity of the silver layer is 8 x 10-5Omega cm, the surface resistance of the silver layer is 40 omega/cm, and the transmittance of the silver layer is 95 percent.
(5) Coating a photoresist layer on the silver layer, arranging a mask plate on the photoresist layer, exposing the photoresist layer, developing the exposed photoresist layer to remove the exposed photoresist, and etching the silver layer to obtain a touch electrode layer; the thickness of the touch electrode layer is 40 μm; and then forming a protective layer with the thickness of 30 mu m on the touch electrode layer.
(6) Sputtering on the second surface of the flexible substrate to form a titanium dioxide layer by adopting a magnetron sputtering mode, wherein the magnetron sputtering power is 1000W, the magnetron sputtering rate is 20nm/min, the oxygen flow is 80sccm, the argon flow is 1180sccm, and the target base distance of magnetron sputtering is 8 cm; the thickness of the titanium dioxide layer was 17 nm.
(7) Sputtering a second silicon dioxide layer on one surface of the titanium dioxide layer far away from the second surface by adopting a magnetron sputtering mode, wherein the power of magnetron sputtering is 3000W, the rate of magnetron sputtering is 25nm/min, the flow of oxygen is 30sccm, the flow of argon is 800sccm, and the target base distance of magnetron sputtering is 8 cm; the thickness of the second silicon dioxide layer was 27 nm.
Example 3
The flexible touch panel of the embodiment is prepared by the following method:
(1) the method comprises the steps of obtaining a flexible substrate with the thickness of 0.1mm, wherein the flexible substrate is a polyimide substrate, cleaning the flexible substrate in a field, sequentially putting the flexible substrate into water and alcohol for ultrasonic cleaning, and then putting the flexible substrate into alcohol vapor for drying.
(2) Roughening the first surface of the flexible substrate by adopting a reactive ion etching mode until the roughness of the first surface is 29nm, wherein the reactive ion etching power is 80W during roughening, and CF (CF) during roughening4And O2Under a mixed gas atmosphere of (5) CF4The gas flow rate of (2) is 200sccm, O2The gas flow rate of (2) was 200sccm, and the roughening treatment was performed for 3 min.
(3) And sputtering on the first surface by adopting a magnetron sputtering mode to form a first silicon dioxide layer, wherein the magnetron sputtering power is 800W, the magnetron sputtering rate is 25nm/min, the oxygen flow is 20sccm, the argon flow is 700sccm, the target base distance of the magnetron sputtering is 8cm, and the thickness of the first silicon dioxide layer is 6 nm.
(4) Sputtering a silver layer on one surface of the first silicon dioxide layer far away from the first surface by adopting a magnetron sputtering mode, wherein the power of magnetron sputtering is 1800W, the rate of magnetron sputtering is 40nm/min, the flow of oxygen is 100sccm, the flow of argon is 1200sccm, the target base distance of magnetron sputtering is 8cm, the thickness of the silver layer is 45 mu m, and the resistivity of the silver layer is 8 x 10-4Omega cm, the surface resistance of the silver layer is 42 omega/cm, and the transmittance of the silver layer is 93 percent.
(5) Coating a photoresist layer on the silver layer, arranging a mask plate on the photoresist layer, exposing the photoresist layer, developing the exposed photoresist layer to remove the exposed photoresist, and etching the silver layer to obtain a touch electrode layer; the thickness of the touch electrode layer is 45 micrometers; and then forming a protective layer with the thickness of 30 mu m on the touch electrode layer.
(6) Sputtering on the second surface of the flexible substrate to form a titanium dioxide layer by adopting a magnetron sputtering mode, wherein the magnetron sputtering power is 2000W, the magnetron sputtering rate is 20nm/min, the oxygen flow is 80sccm, the argon flow is 1180sccm, and the target base distance of magnetron sputtering is 8 cm; the thickness of the titanium dioxide layer was 23 nm.
(7) Sputtering a second silicon dioxide layer on one surface of the titanium dioxide layer far away from the second surface by adopting a magnetron sputtering mode, wherein the power of magnetron sputtering is 3000W, the rate of magnetron sputtering is 25nm/min, the flow of oxygen is 30sccm, the flow of argon is 800sccm, and the target base distance of magnetron sputtering is 8 cm; the thickness of the second silicon dioxide layer was 33 nm.
Example 4
The flexible touch panel of the embodiment is prepared by the following method:
(1) the method comprises the steps of obtaining a flexible substrate with the thickness of 0.1mm, wherein the flexible substrate is a polyethylene terephthalate substrate, cleaning the flexible substrate in a field, sequentially putting the flexible substrate into water and alcohol for ultrasonic cleaning, and then putting the flexible substrate into alcohol vapor for drying.
(2) And sputtering on the first surface by adopting a magnetron sputtering mode to form a first silicon dioxide layer, wherein the magnetron sputtering power is 750W, the magnetron sputtering rate is 25nm/min, the oxygen flow is 10sccm, the argon flow is 600sccm, the target base distance of the magnetron sputtering is 8cm, and the thickness of the first silicon dioxide layer is 5 nm.
(3) Sputtering a silver layer on one surface of the first silicon dioxide layer far away from the first surface by adopting a magnetron sputtering mode, wherein the power of the magnetron sputtering is 1600W, the rate of the magnetron sputtering is 38nm/min, the flow of oxygen is 70sccm, the flow of argon is 90sccm, the target base distance of the magnetron sputtering is 6cm, the thickness of the silver layer is 35 mu m, and the resistivity of the silver layer is 8 x 10-5Omega cm, the surface resistance of the silver layer is 38 omega/cm, and the transmittance of the silver layer is 96 percent.
(4) Coating a photoresist layer on the silver layer, arranging a mask plate on the photoresist layer, exposing the photoresist layer, developing the exposed photoresist layer to remove the exposed photoresist, and etching the silver layer to obtain a touch electrode layer; the thickness of the touch electrode layer is 35 mu m; and then forming a protective layer with the thickness of 30 mu m on the touch electrode layer.
(5) Sputtering on the second surface of the flexible substrate to form a titanium dioxide layer by adopting a magnetron sputtering mode, wherein the magnetron sputtering power is 1000W, the magnetron sputtering rate is 20nm/min, the oxygen flow is 80sccm, the argon flow is 1180sccm, and the target base distance of magnetron sputtering is 8 cm; the thickness of the titanium dioxide layer was 15 nm.
(6) Sputtering a second silicon dioxide layer on one surface of the titanium dioxide layer far away from the second surface by adopting a magnetron sputtering mode, wherein the power of magnetron sputtering is 3000W, the rate of magnetron sputtering is 25nm/min, the flow of oxygen is 30sccm, the flow of argon is 800sccm, and the target base distance of magnetron sputtering is 8 cm; the thickness of the second silicon dioxide layer was 25 nm.
Example 5
The flexible touch panel of the embodiment is prepared by the following method:
(1) the method comprises the steps of obtaining a flexible substrate with the thickness of 0.1mm, wherein the flexible substrate is a polyethylene terephthalate substrate, cleaning the flexible substrate in a field, sequentially putting the flexible substrate into water and alcohol for ultrasonic cleaning, and then putting the flexible substrate into alcohol vapor for drying.
(2) Adopting a reactive ion etching mode to conduct roughening treatment on the first surface of the flexible substrate until the roughness of the first surface is 30.1nm, wherein the reactive ion etching power is 75W during roughening treatment, and CF during roughening treatment4And O2Under a mixed gas atmosphere of (5) CF4The gas flow rate of (1) is 250sccm, O2The gas flow rate of (2) was 200sccm, and the roughening treatment was performed for 3 min.
(3) Sputtering a silver layer on the first surface by adopting a magnetron sputtering mode, wherein the power of the magnetron sputtering is 1700W, the speed of the magnetron sputtering is 38nm/min, the flow of oxygen is 90sccm, the flow of argon is 1100sccm, the target base distance of the magnetron sputtering is 8cm, the thickness of the silver layer is 35 mu m, and the resistivity of the silver layer is 8 x 10-5Omega cm, the surface resistance of the silver layer is 38 omega/cm, and the transmittance of the silver layer is 96 percent.
(4) Coating a photoresist layer on the silver layer, arranging a mask plate on the photoresist layer, exposing the photoresist layer, developing the exposed photoresist layer to remove the exposed photoresist, and etching the silver layer to obtain a touch electrode layer; the thickness of the touch electrode layer is 35 mu m; and then forming a protective layer with the thickness of 30 mu m on the touch electrode layer.
(5) Sputtering on the second surface of the flexible substrate to form a titanium dioxide layer by adopting a magnetron sputtering mode, wherein the magnetron sputtering power is 1000W, the magnetron sputtering rate is 20nm/min, the oxygen flow is 80sccm, the argon flow is 1180sccm, and the target base distance of magnetron sputtering is 8 cm; the thickness of the titanium dioxide layer was 15 nm.
(6) Sputtering a second silicon dioxide layer on one surface of the titanium dioxide layer far away from the second surface by adopting a magnetron sputtering mode, wherein the power of magnetron sputtering is 3000W, the rate of magnetron sputtering is 25nm/min, the flow of oxygen is 30sccm, the flow of argon is 800sccm, and the target base distance of magnetron sputtering is 8 cm; the thickness of the second silicon dioxide layer was 25 nm.
Example 6
The flexible touch panel of the embodiment is prepared by the following method:
(1) the method comprises the steps of obtaining a flexible substrate with the thickness of 0.1mm, wherein the flexible substrate is a polyethylene terephthalate substrate, cleaning the flexible substrate in a field, sequentially putting the flexible substrate into water and alcohol for ultrasonic cleaning, and then putting the flexible substrate into alcohol vapor for drying.
(2) Adopting a reactive ion etching mode to conduct roughening treatment on the first surface of the flexible substrate until the roughness of the first surface is 30.1nm, wherein the reactive ion etching power is 75W during roughening treatment, and CF during roughening treatment4And O2Under a mixed gas atmosphere of (5) CF4The gas flow rate of (1) is 250sccm, O2The gas flow rate of (2) was 200sccm, and the roughening treatment was performed for 3 min.
(3) And sputtering on the first surface by adopting a magnetron sputtering mode to form a first silicon dioxide layer, wherein the magnetron sputtering power is 750W, the magnetron sputtering rate is 25nm/min, the oxygen flow is 10sccm, the argon flow is 600sccm, the target base distance of the magnetron sputtering is 8cm, and the thickness of the first silicon dioxide layer is 5 nm.
(4) Sputtering a silver layer on one surface of the first silicon dioxide layer far away from the first surface by adopting a magnetron sputtering mode, wherein the power of magnetron sputtering is 1600W, the rate of magnetron sputtering is 35nm/min, the flow of oxygen is 80sccm, the flow of argon is 100sccm, the target base distance of magnetron sputtering is 8cm, and the silver layer is formed on the surface of the first silicon dioxide layer far away from the first surfaceHas a thickness of 35 μm and a resistivity of 8 x 10-5Omega cm, the surface resistance of the silver layer is 38 omega/cm, and the transmittance of the silver layer is 96 percent.
(5) Coating a photoresist layer on the silver layer, arranging a mask plate on the photoresist layer, exposing the photoresist layer, developing the exposed photoresist layer to remove the exposed photoresist, and etching the silver layer to obtain a touch electrode layer; the thickness of the touch electrode layer is 35 mu m; and then forming a protective layer with the thickness of 30 mu m on the touch electrode layer.
Example 7
The flexible touch panel of the embodiment is prepared by the following method:
(1) the method comprises the steps of obtaining a flexible substrate with the thickness of 0.1mm, wherein the flexible substrate is a polyethylene terephthalate substrate, cleaning the flexible substrate in a field, sequentially putting the flexible substrate into water and alcohol for ultrasonic cleaning, and then putting the flexible substrate into alcohol vapor for drying.
(2) Printing ink on the surface of the flexible substrate in a silk screen mode, attaching a first layer of nano-silver film coated with a photosensitizer, exposing and developing the first layer of nano-silver film coated with the photosensitizer to obtain a first layer of electrode patterns, printing silver paste on the first layer of electrode patterns on the flexible substrate in a silk screen mode, and then carrying out laser dry etching on silver paste wiring.
(3) And then attaching a second layer of the nano-silver film coated with the photosensitizer, exposing and developing the second layer of the nano-silver film coated with the photosensitizer to obtain a second layer of electrode patterns, then silk-screening silver paste on the second layer of electrode patterns, and then laser dry-etching silver paste lines to obtain the flexible touch panel.
The mechanical properties of the flexible touch panels prepared in examples 1 to 7 were tested, and the results are shown in table 1.
The adhesive force of the flexible touch panel is obtained by testing according to a method in the national standard GB/T4477.7-1984 adhesive force test method and tape method of a plating layer of a printing plate;
the hardness of the flexible touch panel is obtained by testing according to the method in the national standard GB/T5934-1986 microhardness method for testing the hardness of the metal coating of the light industry product;
the flexibility of the flexible touch panel is evaluated by the limit bending times of bending until cracks appear on the surface;
the minimum curvature radius of the flexible touch panel is obtained by testing the bending method of the cylinder.
TABLE 1
The electrical properties, reflectivity, and transmittance of the flexible touch panels prepared in examples 1 to 7 were measured, and the results are shown in table 2.
The resistivity of the flexible touch panel is obtained by adopting a resistivity detector of a DX200H model with the swan in the mode of the microan, and the resistance change rate is calculated by adopting the following formula:
the reflectivity and transmissivity of the flexible touch panel were measured using a UV-2600 spectrometer from shimadzu, japan.
TABLE 2
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A preparation method of a flexible touch panel is characterized by comprising the following steps:
obtaining a flexible substrate, wherein the flexible substrate is provided with a first surface and a second surface opposite to the first surface;
carrying out roughening treatment on the first surface until the roughness of the first surface is 29-33 nm;
forming a first silicon dioxide layer on the first surface subjected to the roughening treatment by sputtering;
sputtering one surface of the first silicon dioxide layer far away from the first surface to form a silver layer; and
performing yellow light process treatment on the silver layer to form a touch electrode layer;
further comprising: forming a protective layer on the surface of the touch electrode layer far away from the first silicon dioxide layer;
forming a titanium dioxide layer on the second surface of the flexible substrate in a sputtering mode;
and sputtering the surface of the titanium dioxide layer far away from the second surface to form a second silicon dioxide layer.
2. The method of manufacturing a flexible touch panel according to claim 1, wherein the material of the flexible substrate is at least one selected from polyethylene terephthalate and polyimide;
and/or the thickness of the flexible substrate is 0.01 mm-0.5 mm.
3. The method of claim 1, wherein the roughening of the first surface is performed by Reactive Ion Etching (RIE), wherein the roughening is performed in CF4And O2Under a mixed gas atmosphere of (5) CF4The gas flow rate of (1) is 200sccm to 300sccm, O2The gas flow rate of the gas is 100sccm to 200 sccm; the power of reactive ion etching during the roughening treatment is 60W-80W, and the roughening treatment time is 2 min-4 min.
4. The method of claim 1, wherein the protective layer is a transparent optical adhesive layer.
5. The method for manufacturing a flexible touch panel according to claim 1, wherein a first silicon dioxide layer is formed on the roughened first surface by sputtering in a magnetron sputtering manner, the magnetron sputtering power is 750W to 1000W, the magnetron sputtering rate is 20nm/min to 30nm/min, the oxygen flow is 10sccm to 20sccm, the argon flow is 600sccm to 800sccm, and the target distance of the magnetron sputtering is 6cm to 10 cm;
and/or sputtering a surface of the first silicon dioxide layer far away from the first surface by adopting a magnetron sputtering mode to form a silver layer, wherein the power of the magnetron sputtering is 1500-3000W, the speed of the magnetron sputtering is 30-40 nm/min, the flow of oxygen is 60-100 sccm, the flow of argon is 800-1200 sccm, and the target base distance of the magnetron sputtering is 6-8 cm.
6. The method of claim 1, wherein the silver layer has a resistivity of 8 x 10-5Ω·cm～8*10-4Omega cm, the surface resistance of the silver is 38 omega/cm-42 omega/cm, and the transmittance of the silver layer is 93-96%.
7. The method of claim 1, wherein the first silicon dioxide layer has a thickness of 5nm to 10 nm;
and/or the thickness of the silver layer is 30-50 μm.
8. The method of claim 1, wherein the yellow light processing comprises the following steps:
coating a photoresist layer on the silver layer;
after a mask plate is arranged on the photoresist layer, carrying out exposure treatment on the photoresist layer;
developing the photoresist layer subjected to the exposure treatment to remove the photoresist subjected to the exposure treatment; and
and etching the silver layer to obtain the touch electrode layer.
9. The method of manufacturing a flexible touch panel according to claim 1, wherein the thickness of the titanium dioxide layer is 15nm to 25 nm; and/or the thickness of the second silicon dioxide layer is 25 nm-35 nm.
10. A flexible touch panel prepared by the method for preparing a flexible touch panel according to any one of claims 1 to 9.
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| WO2021168609A1 (en) * | 2020-02-24 | 2021-09-02 | 南昌欧菲显示科技有限公司 | Patterning method for silver nanowire transparent conductive material, and sensor |
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