CN109037318A - Three-dimensional storage part and its manufacturing method - Google Patents
Three-dimensional storage part and its manufacturing method Download PDFInfo
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- CN109037318A CN109037318A CN201810833946.4A CN201810833946A CN109037318A CN 109037318 A CN109037318 A CN 109037318A CN 201810833946 A CN201810833946 A CN 201810833946A CN 109037318 A CN109037318 A CN 109037318A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000638 solvent extraction Methods 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Abstract
The present invention provides a kind of three-dimensional storage part and its manufacturing methods.The three-dimensional storage part includes: the multiple grid layers stacked on substrate, and multiple grid layers are divided into the first join domain, nucleus and the second join domain set gradually along first direction；And grid separate slot, comprising: the first sub- grid separate slot is extended in a first direction at least one of the first join domain, nucleus or second join domain；And the second sub- grid separate slot, extend in a second direction in nucleus and the intersection of the first join domain and/or the intersection of nucleus and the second join domain, and connect with the first sub- grid separate slot, second direction is vertical with first direction.Three-dimensional storage part of the invention can make full use of the join domain of piece memory block two sides.
Description
Technical field
The invention mainly relates to semiconductor devices more particularly to a kind of three-dimensional storage part and its manufacturing methods.
Background technique
Three-dimensional storage part would generally include one or more memory blocks piece (plane).Two sides in piece memory block are usual
It can be provided with symmetrical for drawing the join domain of grid.Piece memory block and join domain are typically partitioned into multiple blocks,
Form multiple pieces of memory blocks (block).Under normal circumstances, grid is drawn using the join domain of the same side in multiple pieces of memory blocks,
This results in the corresponding join domain in each piece of memory block than narrow.In addition, in the corresponding join domain in each piece of memory block
It usually will form virtual channel and contact portion, this just makes them very narrow in the arrangement of join domain.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of three-dimensional storage part and its manufacturing methods, take full advantage of
The join domain of piece memory block two sides.
In order to solve the above technical problems, an aspect of of the present present invention provides a kind of three-dimensional storage part, comprising: be stacked on lining
Multiple grid layers on bottom, the multiple grid layer are divided into the first join domain, the core space set gradually along first direction
Domain and the second join domain；And grid separate slot, comprising: the first sub- grid separate slot, in first join domain, the core
At least one of region or second join domain extend along the first direction；And the second sub- grid separate slot, in institute
State the intersection of nucleus and first join domain and/or the boundary of the nucleus and second join domain
Place extends in a second direction, and connect with the described first sub- grid separate slot, and the second direction is vertical with the first direction.
In one embodiment of this invention, the multiple grid layer includes: at least one first grid heap, including is stacked on
On the nucleus and extend to multiple grids of first join domain；And at least one second grid heap, including
It is stacked on the nucleus and extends to multiple grids of second join domain, at least one described second grid heap
It piles up at least one described first grid and is alternately arranged in second direction.
In one embodiment of this invention, the grid separate slot be formed in adjacent first grid heap and second grid heap it
Between.
In one embodiment of this invention, in this second direction, the first grid piles up first bonding pad
Domain has the first width, has the second width in the nucleus, first width is greater than or equal to second width.
In one embodiment of this invention, first width is twice of second width.
In one embodiment of this invention, in this second direction, the second grid piles up second bonding pad
Domain has third width, has the 4th width in the nucleus, the third width is greater than or equal to the 4th width.
In one embodiment of this invention, the third width is twice of the 4th width.
In one embodiment of this invention, it includes multiple first finger grids that the first grid, which piles up the nucleus,
Heap includes multiple second finger grid heaps, the first finger grid heap and the second finger grid heap in first join domain
The grid being located on the same floor is electrically connected to each other.
In one embodiment of this invention, it includes multiple third finger grids that the second grid, which piles up the nucleus,
Heap includes multiple 4th finger grid heaps, the third finger grid heap and the 4th finger grid heap in second join domain
The grid being located on the same floor is electrically connected to each other.
In one embodiment of this invention, the first grid piles up first join domain with hierarchic structure.
In one embodiment of this invention, the second grid piles up second join domain with hierarchic structure.
Another aspect provides a kind of manufacturing methods of three-dimensional storage part, comprising: semiconductor structure is provided,
The semiconductor structure includes spaced multiple grid layers, and the multiple grid layer includes successively dividing along first direction
First join domain, nucleus and the second join domain；It is formed in the semiconductor structure and is prolonged with the semiconductor structure
Stretch the vertical grid separate slot in face；The grid separate slot includes connected the first sub- grid separate slot and the second sub- grid separate slot, described
First sub- grid separate slot is at least one of first join domain, the nucleus or second join domain edge
The first direction extends, intersection of the second sub- grid separate slot in the nucleus and first join domain
And/or the intersection of the nucleus and second join domain extends in a second direction, the second direction with it is described
First direction is vertical.
In one embodiment of this invention, further includes: in first join domain of the multiple grid layer and/or institute
It states the second join domain and forms hierarchic structure.
Compared with prior art, the invention has the following advantages that
The join domain of piece memory block two sides is utilized in three-dimensional storage part of the invention point, makes grid pile in join domain
It with biggish size, reduces and the difficulty of virtual channel structure and contact portion is set in bonding pad, and be conducive to increase empty
The size of quasi- channel and contact portion.
Detailed description of the invention
Fig. 1 is the cross-sectional view of the three-dimensional storage part of some embodiments of the invention.
Fig. 2 is the top view of the three-dimensional storage part of some embodiments of the invention.
Fig. 3 is the top view of the three-dimensional storage part of other embodiments of the invention.
Fig. 4 is the manufacturing method of the three-dimensional storage part of some embodiments of the invention.
Specific embodiment
For the above objects, features and advantages of the present invention can be clearer and more comprehensible, below in conjunction with attached drawing to tool of the invention
Body embodiment elaborates.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
It is different from other way described herein using other and implements, therefore the present invention is by the limit of following public specific embodiment
System.
As shown in the application and claims, unless context clearly prompts exceptional situation, " one ", "one", " one
The words such as kind " and/or "the" not refer in particular to odd number, may also comprise plural number.It is, in general, that term " includes " only prompts to wrap with "comprising"
Include clearly identify the step of and element, and these steps and element do not constitute one it is exclusive enumerate, method or apparatus
The step of may also including other or element.
It is to be understood that narration below provides many different embodiments, to implement some embodiments of the invention
Different patterns.Specific element and arrangement mode as described below only simply clearly describe some embodiments of the invention.Certainly, this
A bit only to illustrate and the restriction of non-present invention.Duplicate label or mark may be used in different embodiments.These are repeated
Only for simply clearly describing some embodiments of the invention, does not represent and have between the different embodiments and/or structure discussed
There is any association.Furthermore when describe a first material layer be set in a second material layer or on when, including the first material
The situation that layer is directly contacted with second material layer.Alternatively, the situation of one or more other materials layers is also separated between possibility, in this feelings
In shape, it may be not directly contacted between first material layer and second material layer.
It should be understood that the element or device of attached drawing can be with the various forms known to person of ordinary skill in the field
In the presence of.Furthermore relativity term, such as " lower " or " bottom " or " higher " or " top " may be used in embodiment, with description
Relativeness of one element of attached drawing for another element.It will be appreciated that if the device overturning of attached drawing is made above and below it
Reverse, then the element described in " lower " side will be as the element in " higher " side.The embodiment of the present invention can cooperate attached drawing
Understand together, attached drawing of the invention is also considered as open a part illustrated.It should be understood that attached drawing of the invention not according to
Ratio is drawn, in fact, the size of element may be zoomed in or out arbitrarily clearly to show feature of the invention, and
In specification and attached drawing, same or like element will be indicated with similar symbol.
Although it will be appreciated that term " first ", " second ", " third " etc. can be used herein to describe various elements, group
At or part, these terms be only used to distinguish different elements, composition or part, should not be defined.
Here, " about ", " about ", " substantial " term be generally represented in the 20% of a given value or range, preferably
It is in 10%, is more preferably in 5% or within 3% or within 2% or within 1% or within 0.5%.Given quantity herein
It is quantity about, that is, in the case where no certain illustrated " about ", " about ", " substantial ", can still implies " about ", " greatly
About ", the meaning of " substantial ".
Unless otherwise defined, whole terms (including technology and scientific words) as used herein have and skill belonging to the present invention
The normally understood identical connotation of the technical staff in art field.It is appreciated that, these terms are for example in usually used dictionary
Define term, should be interpreted to have with the relevant technologies and background of the invention or the consistent meaning of context, without Ying Yiyi
Idealization or excessively formal mode are interpreted, unless having special definition in the embodiment of the present invention.
Fig. 1 is the cross-sectional view of the three-dimensional storage part of some embodiments of the invention.Refering to what is shown in Fig. 1, three-dimensional storage part
100 include substrate 110 and the multiple grid layers 120 being stacked on substrate 110.As shown in Figure 1, can be by substrate 110 and multiple
Grid layer 120 is divided into the first join domain 110a, nucleus 110b and the second join domain 110c along first direction A.It needs
Be provided with wall it is noted that being stacked between multiple grid layers 120 on substrate 110, grid layer 120 and wall it
Between be arranged alternately.In some embodiments, the typically siliceous substrate of substrate 110, such as Si, SOI (silicon-on-insulator),
SiGe, Si:C etc., although this and it is non-limiting.In addition, the trap of some doping can be set as needed on substrate 110, for example, N trap or
Person's p-well.In some embodiments, the material of grid layer 120 is, for example, metal (such as tungsten).In some embodiments, wall
Material is, for example, silica.The material of wall is without being limited thereto, is also possible to other insulating materials.
In nucleus 110b, the memory cell with three dimensional arrangement can be formed and be electrically connected to memory cell
Bit line and wordline (grid).In the first join domain 110a and the second join domain 110c, grid, virtual could be formed with
Channel and contact portion etc..The virtual channel can be used as support member.The contact portion can be used for drawing grid.
Fig. 2 is the top view of the three-dimensional storage part of some embodiments of the invention.Refering to what is shown in Fig. 2, multiple grid layers 120
In grid separate slot 101 can be set.Grid separate slot 101 is perpendicularly through multiple grid layers 120 as shown in Figure 1.Grid every
Slot 101 may include the first sub- sub- grid separate slot 101b of grid separate slot 101a and second.First sub- grid separate slot 101a can be
First join domain 110a, nucleus 110b and/or the second join domain 110c extend along first direction A.Second sub- grid
Separate slot 101b can connect in the intersection and/or nucleus 110b of nucleus 110b and the first join domain 110a and second
Connect the intersection B extension in a second direction of region 110c.It should be noted that second direction B is the side vertical with first direction A
To.
Multiple grid layers 120 can be divided into multiple first grid heaps 121 and multiple second grid heaps by grid separate slot 101
122, multiple first grid heaps 121 are alternately arranged on second direction B with multiple second grid heaps 122.In this way, three-dimensional storage
Part 100 forms multiple pieces of memory blocks of B arrangement in a second direction in nucleus 110b.Refering to what is shown in Fig. 2, grid separate slot
101 can be formed between adjacent first grid heap 121 and second grid heap 122.
In some embodiments, as shown in Figure 1, first grid heap 121 can have ladder in the first join domain 110a
Structure.Similarly, as shown in Figure 1, second grid heap 122 can have hierarchic structure in the second join domain 110c.
In conjunction with referring to fig. 1 and fig. 2, first grid heap 121 may include being stacked on nucleus 110b and extending
To multiple grids of the first join domain 110a.Similarly, second grid heap 122 may include being stacked on nucleus 110b
And extend to multiple grids of the second join domain 110c.
Although in the embodiment shown in Figure 2, three-dimensional storage part 100 includes multiple first grid heaps 121 and multiple the
Two grid piles 122, it is to be understood that, the quantity of first grid heap 121 and/or second grid heap 122 in three-dimensional storage part 100
It can be one.
With continued reference to Fig. 2, on second direction B, first grid heap 121 has the first width in the first join domain 110a
W1 has the second width w2 in nucleus.In the embodiment shown in Figure 2, the first width w1 is greater than the second width w2.It is preferred that
Ground, the first width w1 can be twice of the second width w2.It is appreciated that the first width w1 can also be equal to the second width w2.
Similarly, on second direction B, second grid heap 122 has third width w3 in the second join domain 110c,
Nucleus has the 4th width w4.In the embodiment shown in Figure 2, third width w3 is greater than the 4th width w4.Preferably,
Three width w3 can be twice of the 4th width w4.It is appreciated that third width w3 can also be equal to the 4th width w4.
Fig. 3 is the top view of the three-dimensional storage part of other embodiments of the invention.Refering to what is shown in Fig. 3, in nucleus
The first finger grid separate slot 102 extended along first direction A can be set in first grid heap 121 by 110b, will be in core
First grid heap 121 in the 110b of heart district domain is divided into two the first finger grid heap 121a.That is, by first grid heap
The 121 block memory partitionings formed in nucleus 110b are divided into two finger memory blocks.Although each first grid heap in Fig. 3
It is provided only with a first finger grid separate slot 102 in 121 nucleus 110b, the first grid heap 121 in the region is divided
At two the first finger grid heap 121a, it is to be understood that, it can be arranged in the nucleus 110b of each first grid heap 121
First grid heap 121 in the region is divided into multiple first finger grid heap 121a by multiple first finger grid separate slots 102.Example
Such as, two the first finger grid separate slots 102 can be set in the nucleus 110b of first grid heap 121, it will be in the region
First grid heap 121 be divided into three the first finger grid heap 121a.
Second extended there are three can be set in the first join domain 110a, first grid heap 121 along first direction A
First grid heap 121 in the first join domain 110a is divided into four the second finger grid heaps by finger grid separate slot 103
121b.Although there are three the second finger grid separate slots for setting in the first join domain 110a of each first grid heap 121 in Fig. 3
103, the first grid heap 121 in the region is divided into four the second finger grid heap 121b, it is to be understood that, it can be each
Any number of second finger grid separate slot 103 of setting in first join domain 110a of one grid pile 121, will be in the region
First grid heap 121 is divided into multiple second finger grid heap 121b.For example, can be in the first join domain of first grid heap 121
One the second finger grid separate slot 103 is set in 110a, the first grid heap 121 in the region is divided into two the second finger grids
Heap 121b.Preferably, the number of the second finger grid heap 121b is twice of the number of the first finger grid heap 121a.
In some embodiments, between the second finger grid separate slot 103 and the first finger grid separate slot 102 and grid separate slot 101
It does not interconnect.It changes an angle to say, the grid that the first finger grid heap 121a and the second finger grid heap 121b are located on the same floor
Pole is electrically connected to each other.
It should be noted that, although in Fig. 3, each first grid heap 121 have equal number of first finger grid every
Slot 102 and the second finger grid separate slot 103, it is to be understood that, different first grid heaps 121 can have different number of first
Finger grid separate slot 102 and/or the second finger grid separate slot 103.That is, different first grid heaps 121 is in nucleus
110b may include different number of first finger grid heap 121a.Different first grid heaps 121 is in the first join domain 110a
It may include different number of second finger grid heap 121b.
With continued reference to one shown in Fig. 3, can be set in nucleus 110b, second grid heap 122 along first party
The third finger grid separate slot 104 extended to A, is divided into two thirds for the second grid heap 122 in nucleus 110b
Finger grid heap 122a.That is, the block memory partitioning that second grid heap 122 is formed in nucleus 110b is divided into two
Refer to memory block.Although be provided only in the nucleus 110b of each second grid heap 122 in Fig. 3 a third finger grid every
Second grid heap 122 in the region is divided into two third finger grid heap 122a by slot 104, it is to be understood that, it can be each
The multiple third finger grid separate slots 104 of setting in the nucleus 110b of second grid heap 122, by the second grid in the region
Heap 122 is divided into multiple third finger grid heap 122a.For example, two can be arranged in the nucleus 110b of second grid heap 122
Second grid heap 122 in the region is divided into three third finger grid heap 122a by a third finger grid separate slot 104.
The 4th extended there are three can be set in the second join domain 110c, second grid heap 122 along first direction A
Second grid heap 122 in the second join domain 110c is divided into four the 4th finger grid heaps by finger grid separate slot 105
122b.Although there are three the 4th finger grid separate slots for setting in the second join domain 110c of each second grid heap 122 in Fig. 3
105, the second grid heap 122 in the region is divided into four the 4th finger grid heap 122b, it is to be understood that, it can be each
Any number of 4th finger grid separate slot 105 of setting in second join domain 110c of two grid piles 122, will be in the region
Second grid heap 122 is divided into multiple 4th finger grid heap 122b.For example, can be in the second join domain of second grid heap 122
One the 4th finger grid separate slot 105 is set in 110c, the second grid heap 122 in the region is divided into two the 4th finger grids
Heap 122b.Preferably, the number of the 4th finger grid heap 122b is twice of the number of third finger grid heap 122a.
In some embodiments, between the 4th finger grid separate slot 105 and third finger grid separate slot 104 and grid separate slot 101
It does not interconnect.It changes an angle to say, the grid that third finger grid heap 122a and the 4th finger grid heap 122b are located on the same floor
Pole is electrically connected to each other.
It should be noted that, although in Fig. 3, each second grid heap 122 have equal number of third finger grid every
Slot 104 and the 4th finger grid separate slot 105, it is to be understood that, different second grid heaps 122 can have different number of third
Finger grid separate slot 104 and/or the 4th finger grid separate slot 105.That is, different second grid heaps 122 is in nucleus
110b may include different number of third finger grid heap 122a.Different second grid heaps 122 is in the second join domain 110c
It may include different number of 4th finger grid heap 122b.
Fig. 4 is the manufacturing method of the three-dimensional storage part of some embodiments of the invention.Refering to what is shown in Fig. 4, three-dimensional storage
The manufacturing method 200 of part may include steps of:
Step 210: semiconductor structure is provided.Wherein, semiconductor structure includes spaced multiple grid layers, multiple grid
Pole layer includes the first join domain, nucleus and the second join domain successively divided along first direction.
Step 220: the grid separate slot vertical with the extended surface of semiconductor structure is formed in semiconductor structure.The grid separate slot
It may include connected the first sub- grid separate slot and the second sub- grid separate slot, the first sub- grid separate slot is in the first join domain, core
At least one of heart district domain or the second join domain extend in a first direction, and the second sub- grid separate slot is in nucleus and first
The intersection and/or nucleus of join domain extend in a second direction with the intersection of the second join domain.Wherein, second party
To vertical with first direction.
In some embodiments, the manufacturing method 200 of three-dimensional storage part can also include:
Step 230: forming hierarchic structure in the first join domain of multiple grid layers and/or the second join domain.
The three-dimensional storage as described in above-described embodiment can be for example formed by the manufacturing method 200 of three-dimensional storage part
Part 100.
Although the present invention is described with reference to current specific embodiment, those of ordinary skill in the art
It should be appreciated that above embodiment is intended merely to illustrate the present invention, can also make in the case where no disengaging spirit of that invention
Various equivalent change or replacement out, therefore, as long as to the variation of above-described embodiment, change in spirit of the invention
Type will all be fallen in the range of following claims.
Claims (13)
1. a kind of three-dimensional storage part, comprising:
Multiple grid layers on substrate are stacked, the multiple grid layer is divided into the first connection set gradually along first direction
Region, nucleus and the second join domain；And
Grid separate slot, comprising:
First sub- grid separate slot, in first join domain, the nucleus or second join domain at least
One extends along the first direction；And
Second sub- grid separate slot, in the intersection and/or the nucleus of the nucleus and first join domain
Extend in a second direction with the intersection of second join domain, and is connect with the described first sub- grid separate slot, described
Two directions are vertical with the first direction.
2. three-dimensional storage part according to claim 1, which is characterized in that the multiple grid layer includes:
At least one first grid heap, including being stacked on the nucleus and extending to the multiple of first join domain
Grid；And
At least one second grid heap, including being stacked on the nucleus and extending to the multiple of second join domain
Grid, at least one described second grid heap is piled up at least one described first grid to be alternately arranged in second direction.
3. three-dimensional storage part according to claim 2, which is characterized in that the grid separate slot is formed in adjacent first
Between grid pile and second grid heap.
4. three-dimensional storage part according to claim 2, which is characterized in that in this second direction, the first grid
Pole piles up first join domain with the first width, has the second width in the nucleus, first width is big
In or equal to second width.
5. three-dimensional storage part according to claim 4, which is characterized in that first width is second width
Twice.
6. three-dimensional storage part according to claim 2, which is characterized in that in this second direction, the second gate
Pole piles up second join domain with third width, has the 4th width in the nucleus, the third width is big
In or equal to the 4th width.
7. three-dimensional storage part according to claim 6, which is characterized in that the third width is the 4th width
Twice.
8. three-dimensional storage part according to claim 2, which is characterized in that the first grid piles up the nucleus
It include multiple second finger grid heaps, the first finger grid heap in first join domain including multiple first finger grid heaps
The grid being located on the same floor with the second finger grid heap is electrically connected to each other.
9. three-dimensional storage part according to claim 2, which is characterized in that the second grid piles up the nucleus
It include multiple 4th finger grid heaps, the third finger grid heap in second join domain including multiple third finger grid heaps
The grid being located on the same floor with the 4th finger grid heap is electrically connected to each other.
10. three-dimensional storage part according to claim 2, which is characterized in that the first grid piles up described first and connects
Region is connect with hierarchic structure.
11. three-dimensional storage part according to claim 2, which is characterized in that the second grid piles up described second and connects
Region is connect with hierarchic structure.
12. a kind of manufacturing method of three-dimensional storage part, comprising:
Semiconductor structure is provided, the semiconductor structure includes spaced multiple grid layers, and the multiple grid layer includes
The first join domain, nucleus and the second join domain successively divided along first direction；
The grid separate slot vertical with the extended surface of the semiconductor structure is formed in the semiconductor structure；
The grid separate slot includes connected the first sub- grid separate slot and the second sub- grid separate slot, and the first sub- grid separate slot exists
At least one of first join domain, the nucleus or described second join domain prolong along the first direction
It stretches, intersection and/or the core space of the second sub- grid separate slot in the nucleus and first join domain
Domain and the intersection of second join domain extend in a second direction, and the second direction is vertical with the first direction.
13. the manufacturing method of three-dimensional storage part according to claim 12, which is characterized in that further include:
Hierarchic structure is formed in first join domain of the multiple grid layer and/or second join domain.
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| CN201810833946.4A CN109037318B (en) | 2018-07-26 | 2018-07-26 | Three-dimensional memory device and method of fabricating the same |
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| CN201810833946.4A CN109037318B (en) | 2018-07-26 | 2018-07-26 | Three-dimensional memory device and method of fabricating the same |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110140070A1 (en) * | 2008-08-14 | 2011-06-16 | Sung-Dong Kim | Three-dimensional semiconductor device and methods of fabricating and operating the same |
| US20140103417A1 (en) * | 2012-10-16 | 2014-04-17 | SK Hynix Inc. | Semiconductor device and method of manufacturing the same |
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| US20110140070A1 (en) * | 2008-08-14 | 2011-06-16 | Sung-Dong Kim | Three-dimensional semiconductor device and methods of fabricating and operating the same |
| US20140103417A1 (en) * | 2012-10-16 | 2014-04-17 | SK Hynix Inc. | Semiconductor device and method of manufacturing the same |
| KR20150067811A (en) * | 2013-12-09 | 2015-06-19 | 에스케이하이닉스 주식회사 | Semiconductor device and method of manufacturing the same |
| CN106684086A (en) * | 2015-11-06 | 2017-05-17 | 爱思开海力士有限公司 | Semiconductor device and manufacturing method thereof |
| CN107331667A (en) * | 2016-04-11 | 2017-11-07 | 三星电子株式会社 | The Nonvolatile semiconductor device of channel pattern including non-circular shape |
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