CN109037248A - Imaging sensor and forming method thereof, fingerprint imaging mould group - Google Patents
Imaging sensor and forming method thereof, fingerprint imaging mould group Download PDFInfo
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- CN109037248A CN109037248A CN201710429686.XA CN201710429686A CN109037248A CN 109037248 A CN109037248 A CN 109037248A CN 201710429686 A CN201710429686 A CN 201710429686A CN 109037248 A CN109037248 A CN 109037248A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Human Computer Interaction (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Image Input (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
A kind of imaging sensor and forming method thereof, fingerprint imaging mould group, described image sensor includes: substrate；First lens, discrete is set on the substrate；Photoelectric device, on the substrate between the first lens.First lens can collimate the light of transmission described image sensor, so as to effectively reduce the generation of stray light, increase the ratio of signal light in reflected light, reduce the ratio of noise light, the raising for being conducive to fingerprint imaging mould group signal-to-noise ratio, is conducive to the improvement of fingerprint imaging module performance.
Description
Technical field
The present invention relates to fingerprint imaging field, in particular to a kind of imaging sensor and forming method thereof, fingerprint imaging mould
Group.
Background technique
Fingerprint identification technology is the fingerprint image that human body is collected by imaging sensor, then and in fingerprint recognition system
Existing finger print information is compared, to realize the technology of identification.Due to the uniqueness of its convenience and somatic fingerprint,
Fingerprint identification technology has been widely used in every field, such as: the field of safety check such as public security bureau, customs, the access control system of building,
And consumer product areas such as PC and mobile phone etc..
Imaging mode employed in fingerprint identification technology has optical profile type, condenser type, ultrasonic type etc. a variety of.It is one of
It is the fingerprint image that human body is acquired by optical profile type imaging modules.Optical profile type imaging modules specifically include that cover sheet, image pass
Electronic device (including light source led), leaded light on sensor, integrated chip (IC), flexible circuit board (FPC) and flexible circuit board
The main components such as plate, upper protection shell and lower protection shell.Wherein imaging sensor is to utilize amorphous silicon film transistor (a-
Si TFT), low-temperature polysilicon film transistor (LTPS TFT) or oxide semiconductor thin-film transistor (OS TFT) etc. partly lead
Body technology technology, makes on the glass substrate；Encapsulation is realized by the processes such as cutting, dispensing, bonding later.
But fingerprint imaging mould group in the prior art often has that noise signal is excessive, the too low problem of signal-to-noise ratio.
Summary of the invention
Problems solved by the invention is to provide a kind of imaging sensor and forming method thereof, fingerprint imaging mould group, to inhibit
Noise, enhancing signal, improve the signal-to-noise ratio of fingerprint imaging mould group.
To solve the above problems, the present invention provides a kind of forming method of imaging sensor, comprising:
Substrate is formed, there are multiple the first discrete lens on the substrate；It is formed between the first lens on substrate
Photoelectric device.
Optionally, the step of forming substrate includes: offer initial substrate；The part initial substrate is removed, described in formation
Substrate and first lens.
Optionally, the part initial substrate is removed by way of wet etching.
Optionally, the forming method further include: formed after the substrate, formed before the photoelectric device, to institute
It states substrate and first lens carries out surface topography processing.
Optionally, surface topography processing is carried out to the substrate and first lens by way of dry etching.
Optionally, the forming method further include: formed after the photoelectric device, form on the photoelectric device
Two lens.
Optionally, the material of second lens is organic material；Described is formed by way of mask exposure, development
Two lens.
Optionally, the step of forming second lens further include: after mask exposure, development, carry out baking processing.
Optionally, the forming method further include: formed after the photoelectric device, formed at least saturating around described first
The light shield layer of mirror.
Optionally, the material of the light shield layer is organic material；The shading is formed by way of mask exposure, development
Layer.
Optionally, the light shield layer around first lens and the photoelectric device is formed；Light shield layer is surrounded in surrounding
Photoelectric device on form the second lens.
Optionally, the forming method further include: formed after photoelectric device, formed and cover first lens and described
The encapsulation lamination of photoelectric device.
Optionally, the step of forming the encapsulation lamination includes: to be formed positioned at first lens and the photoelectric device
On planarization layer；Passivation layer is formed on the planarization layer.
Optionally, the forming method further include: it is formed after the photoelectric device, is formed before the planarization layer,
At least isolated material is formed on first lens.
Optionally, the second lens are also formed on the photoelectric device；On first lens and second lens
Form isolated material.
Correspondingly, the present invention also provides a kind of imaging sensors, comprising:
Substrate；First lens, discrete is set on the substrate；Photoelectric device, the substrate between the first lens
On.
Optionally, first lens and the substrate are structure as a whole.
Optionally, the substrate is identical with the material of first lens.
Optionally, described image sensor further include: the second lens are located on the photoelectric device.
Optionally, described image sensor further include: light shield layer, at least around first lens.
Optionally, the absorptivity of the shading layer material is 85% or more.
Optionally, described image sensor further include: the second lens on the photoelectric device；The light shield layer is also
Around second lens.
Optionally, described image sensor further include: encapsulation lamination covers first lens and the photoelectric device.
Optionally, the encapsulation lamination includes: planarization layer, is located on first lens and the photoelectric device；It is blunt
Change layer, is located on the planarization layer.
Optionally, described image sensor further include: isolated material, be located at the planarization layer and first lens it
Between.
Optionally, described image sensor further include: the second lens on the photoelectric device；The isolated material
It is also located between the planarization layer and second lens.
Optionally, the refractive index of the planarization layer material is less than the refractive index of the isolated material.
In addition, the present invention also provides a kind of fingerprint imaging mould groups, comprising:
Light source, for generating initial light；Imaging sensor, described image sensor are imaging sensor of the invention, institute
Stating the first lens makes the initial light form the incident light；Sensing face, the incident light form carrying in the sensing face
There is the reflected light of finger print information；The photoelectric device acquires the reflected light to obtain fingerprint image.
Compared with prior art, technical solution of the present invention has the advantage that
First lens can collimate the light of transmission described image sensor, so as to effectively reduce
The propagation angle for penetrating light propagates transmitted ray with the direction of the vertical substrate surface as far as possible；Therefore there is described image
For sensor application when fingerprint imaging mould group, the setting of first lens can effectively improve the collimation of incident light, reduce
Incident light is transmitted through the incident angle of sensing face, thus increase the ingredient of the smaller light of shooting angle in formed reflected light,
Increase the ratio of signal light in reflected light；And the raising of incident light collimation, additionally it is possible to which the generation for effectively reducing stray light subtracts
The ratio of noise light in few reflected light；So the setting of first lens can effectively improve the noise of fingerprint imaging mould group
Than being conducive to the performance for improving fingerprint imaging mould group.
In optinal plan of the present invention, described image sensor further include: the second lens on the photoelectric device, institute
The incident angle for being transmitted through the photoelectric device light can be effectively reduced by stating the second lens, that is, is reduced the photoelectric device and adopted
Collect the incident angle of light；When therefore there is described image sensor to be applied to fingerprint imaging mould group, second lens are set
The collimation that can also effectively improve reflected light is set, to reduce the ingredient of stray light in reflected light, and then reaches inhibition noise
Purpose, be conducive to the signal-to-noise ratio for improving the fingerprint imaging mould group, be conducive to the performance for improving the fingerprint imaging mould group.
In optinal plan of the present invention, described image sensor further include: light shield layer, the light shield layer is at least around described the
The setting of one lens；In the imaging sensor with the second lens, the light shield layer is also arranged around second lens.It is described
The absorptivity of the material of light shield layer is higher, can be realized the purpose for absorbing stray light, so as to effectively reduce noise signal
Intensity is conducive to the improvement of signal-to-noise ratio, the raising of performance.
Detailed description of the invention
Fig. 1 is a kind of the schematic diagram of the section structure of fingerprint imaging mould group；
Light path schematic diagram when Fig. 2 is the group of fingerprint imaging mould shown in Fig. 1 acquisition fingerprint；
Fig. 3 to Fig. 9 is the corresponding structural schematic diagram of the one each step of embodiment of this hair imaging sensor forming method；
Figure 10 is the schematic diagram of the section structure of one embodiment of fingerprint imaging mould group of the present invention；
Figure 11 is optical path signal of the structure when acquiring fingerprint in box 240 in the group embodiment of fingerprint imaging mould shown in Figure 10
Figure.
Specific embodiment
It can be seen from background technology that fingerprint imaging mould group in the prior art has that noise is excessive, signal-to-noise ratio is lower.
The reason of problem low now in conjunction with a kind of structural analysis of fingerprint imaging mould group its signal-to-noise ratio.
With reference to Fig. 1, a kind of the schematic diagram of the section structure of fingerprint imaging mould group is shown.
The fingerprint imaging mould group is super-thin optical fingerprint imaging modules.The fingerprint imaging mould group is to pass through photoelectricity
Transfer principle realizes fingerprint imaging, comprising: light source 11, is located at the figure at the imaging sensor 12 on the light source 11
As the sensing face 13 on sensor 12.
When acquiring fingerprint, finger is pressed in the sensing face 13；The incident light that the light source 11 generates is in the sense
Reflection and transmission occur on survey face 13；It is formed by reflected light projects to described image sensor 12；Described image sensor
The 12 acquisition reflected lights, and photoelectric conversion and signal processing are carried out, realize the acquisition of fingerprint image.
As shown in Fig. 2, the light source 11 is generally area source or point light source.It is described when the light source 11 is area source
Incident light 21 is by reflecting to form, and form the incident light 21 is reflected into diffusing reflection, so the incident light 21
For the random diffused light in the direction of propagation；When the light source 11 is point light source, the incident light caused by point light source is with one
Fixed angle of divergence outgoing.Therefore, the collimation of the incident light 21 is not very strong, is not necessarily all perpendicular projection to the sensing
On face 13.
Since the collimation of the incident light 21 is weaker, and the incident light 21 is with various angular transmissions to the sensing
On face 13, so the shooting angle of formed reflected light 22 is also random, i.e., it include multiple angle in the described reflected light 22
Spend the light of outgoing；Correspondingly, the angle that the reflected light 22 is transmitted through in described image sensor 12 be also it is random, with
The reflected light 22 of multiple angles projection is acquired by described image sensor 12, to obtain fingerprint image.
But for the acquisition of fingerprint image, fingerprint letter entrained by the reflected light 22 that the vertical sensing face 13 is propagated
Cease more, therefore the reflected light 22 that the vertical sensing face 13 is propagated is effectively to believe for described image sensor 12
Number, i.e., the described reflected light 22 is signal light；And finger print information entrained by the reflected light 22 that other angles are propagated is less, and
The acquisition of useful signal can also be interfered, the incident light 21 transmitted at other angles is noise light.
It is larger that described image sensor 12 causes noise signal to the acquisition for the reflected light 22 that other angles are propagated
The problem of, to easily cause the lower problem of the fingerprint imaging mould group signal-to-noise ratio.
To solve the technical problem, the present invention provides a kind of imaging sensor and forming method thereof, by substrate
Multiple the first discrete lens are set, and are set to the photoelectric device on the substrate between the first lens；It is described to make
First lens collimate the light of transmission described image sensor, to reduce the propagation angle of transmitted ray, make transmitted light
Line is propagated as far as possible with the direction of the vertical substrate surface, and then increases the ratio of signal light in fingerprint imaging mould group internal reflection light
Example, reduces the generation of stray light, achievees the purpose that improve signal-to-noise ratio, improves fingerprint image quality.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
With reference to Fig. 3 to Fig. 9, shows the corresponding structure of the one each step of embodiment of this hair imaging sensor forming method and show
It is intended to.
With reference to Fig. 3, substrate 110 is formed, there are multiple the first discrete lens 121 on the substrate 110.
First lens 121 can collimate the light for transmiting formed imaging sensor, so as to effective
Reduction transmitted ray propagation angle, propagate transmitted ray with the direction on vertical 110 surface of substrate as far as possible.
It should be noted that image sensor application is formed by fingerprint imaging mould group, for obtaining in the present embodiment
Obtain fingerprint image；The setting of first lens 121 can effectively improve the collimation of incident light, reduce incident light and be projected to sense
The incident angle in survey face increases and believes in reflected light so that the ingredient of the smaller light of shooting angle in formed reflected light be made to increase
The ratio of number light；And the raising of incident light collimation, additionally it is possible to effectively reduce the generation of stray light, reduce noise in reflected light
The ratio of light；So the setting of first lens can effectively improve the signal-to-noise ratio of fingerprint imaging mould group, is conducive to raising and refers to
The performance of line imaging modules.
The substrate 110 is used to provide technological operation platform for subsequent technique, is also used to rise in described image sensor
It is acted on to mechanical support.
In the present embodiment, the material of the substrate 110 is glass.Since formed imaging sensor is for constituting ultrathin type
Fingerprint imaging mould group, i.e., in constituted fingerprint imaging mould group, described image sensor between sensing face and light source, so
It sets the material of the substrate 110 to the way of glass, can be improved the transmissivity of incident light produced by light source, be conducive to refer to
The acquisition of print image.In other embodiments of the invention, the material of the substrate be also an option that acrylic or sapphire etc. other
The material or lamination solution structure of light transmission.
The light of 121 pairs of first lens transmission described image sensors collimates.
The substrate 110 has the first face (not indicating in figure) being disposed opposite to each other and the second face (not indicating in figure), described
First lens 121 are located on first face.In the present embodiment, in the fingerprint imaging mould group of integrated formed imaging sensor,
Light source and first lens 121 are located at the two sides of the substrate 110, that is, in constituted fingerprint imaging mould group, light source is located at institute
The side in 110 second face of substrate is stated, incident light caused by light source is propagated along the direction that the first face is directed toward in the second face；So described
First lens 121 are convex lens, are raised in the first face of the substrate 110, i.e., the thickness of described first lens 121 refers to along center
It is gradually reduced on peripherad direction.
First lens 121 are discrete to be set on the first face of the substrate 110, between adjacent first lens 121
With certain interval, so that the formation for subsequent photoelectric device provides space.
It should be noted that the focal length phase of the height and width of first lens 121 with first lens 121
It closes, it is related to the collimating effect of light to first lens 121.So the height of first lens 121 should not be too big
Should not be too small, the width of first lens 121 should not it is too small also should not be too big.
If the height of first lens 121 is too big, if width is too small, i.e., the focal length mistake of described first lens 121
It is small, first lens 121 may be will affect to the collimating effect of transmitted ray, be unfavorable for making transmitted ray in a perpendicular direction
It propagates, and the height of first lens 121 is too big, is also unfavorable for reducing the thickness for being formed by imaging sensor；It is described
If the height of the first lens 121 is too small, if width is too big, i.e., the focal length of described first lens 121 is excessive, also will affect institute
The first lens 121 are stated to the collimating effect of transmitted ray, and if first lens 121 width it is too big, be unfavorable for
Reduce formed image area sensor.
Specifically, the height of first lens 121 is less than or equal to 10 μm in the present embodiment, i.e., the vertical substrate
On the direction on 110 surfaces, the size of first lens 121 is less than or equal to 10 μm；The width of first lens 121 is less than
Or being equal to 10 μm, i.e., on the direction on parallel 110 surface of substrate, the size of first lens is less than or equal to 10 μm.
It should be noted that first lens 121 are projected as justifying on 110 surface of substrate in the present embodiment
Shape.But the projection of the first lens described in other embodiments of the invention may be other shapes.
Specifically, the step of forming substrate 110 includes: to provide initial substrate (not shown)；Remove part institute
Initial substrate is stated, the substrate 110 and first lens 121 are formed.
The initial substrate is used to provide Process ba- sis for the formation of the substrate 110 and first lens 121.
In the present embodiment, the substrate 110 and first lens 121 are glass, so the material of the initial substrate
Material is glass, in other embodiments of the invention, the material of the initial substrate can also for other translucent materials of acrylic lamp or
The laminated material of person's light transmission.
The step of removing the part initial substrate includes: that patterned mask layer 111 is formed in the initial substrate；
It is exposure mask with the patterned mask layer 111, etches the initial substrate, remove some materials of the initial substrate, with
Form the substrate 110 and first lens 121.
Specifically, the step of etching the initial substrate includes: that remove part by way of wet etching described initial
Substrate.The substrate can be effectively improved by the way that wet etching forms the substrate 110 and first lens 121
110 and 121 surface of the first lens planarization, 121 surface shape of 110 surface of substrate and first lens can be made
At good optical surface, to improve the precision of 121 collimating effect of the first lens, the shape of stray light is advantageously reduced
At, be conducive to improve described image sensor performance.
In the present embodiment, the material of the initial substrate is glass, so wet etching forms the substrate 110 and described
The step of first lens 121 includes: that the initial substrate is etched by way of hydrofluoric acid wet etching.
It is formed after the substrate 110 and first lens 121, removes the mask layer 111, expose described first thoroughly
The surface of mirror 121.In the present embodiment, the material of the mask layer 111 is photoresist, it is possible to be gone by ashing or wet process
The mode of glue removes the mask layer 111, to remove the mask layer 111, and reduces and causes to 121 surface of the first lens
The probability of damage.
It should be noted that in the present embodiment, the forming method further include: formed after the substrate 110, to described
Substrate 110 and first lens 121 carry out surface topography processing, so that the table of the substrate 110 and first lens 121
Face forms good optical surface, improves first lens 121 to the precision of transmitted ray collimating effect,
The pattern processing can remove burr and the boundary of the substrate 110 and 121 surface of the first lens, thus
Improve the flatness and smoothness of the substrate 110 and 121 surface of the first lens.In the present embodiment, pass through dry etching
Mode surface topography processing is carried out to the substrate 110 and first lens 121.Specifically, the mistake of the dry etching
Process gas employed in journey includes SF6And Cl2。
It should be noted that the substrate 110 and first lens 121 are described first by etching in the present embodiment
Beginning substrate and be formed simultaneously, so the substrate 110 and first lens 121 are structure as a whole, i.e., described 110 He of substrate
First lens 121 are seamless connected, therefore the substrate 110 is identical with the material of first lens 121.
In other embodiments of the invention, the substrate and first lens can also be divided into two parts, and shape respectively
At.Specifically, the initial substrate also may include substrate and the lens material layer on the substrate；Form the substrate
Include: the removal part lens material layer with the step of first lens, exposes the substrate and be located on the substrate
The first lens.When the substrate and first lens are two parts, the material of the substrate and first lens can
It can also be different with identical.
It should be noted that forming the substrate 110 and institute by initial substrate described in wet etching in the present embodiment
The first lens 121 are stated, and carry out the pattern processing by way of dry etching.Since subsequent photoelectric device is also by half
What semiconductor process was formed, therefore this way that the substrate 110 and first lens 121 are formed by semiconductor technology,
It can be improved processing compatibility, be conducive to the raising of quality and yield, be conducive to the reduction of process costs.
With reference to Fig. 4, the photoelectric device 122 between the first lens 121 on substrate 110 is formed.
The photoelectric device 122 is for acquiring optical signal and realizing the photoelectric conversion of the optical signal to obtain image.
In the present embodiment, image sensor application is formed by fingerprint imaging mould group, for obtaining fingerprint image；Thoroughly
The incident light for penetrating formed imaging sensor is projected in sensing face, forms reflected light in the sensing face, due to it is described enter
It penetrates light to collimate through first lens 121, therefore it is larger to be formed by the lesser light component of shooting angle in reflected light, so
The lesser ratio of shooting angle also increases accordingly in the photoelectric device 122 reflected light collected, i.e., the described photoelectric device 122
In acquired optical signal, signal light ratio is higher, interference light ratio is lower, is conducive to the acquisition of high quality fingerprint image.
The photoelectric device 122 is on the substrate 110 between first lens 121, i.e., the described photoelectric device
122 are located at 110 surface of the substrate that first lens 121 expose, therefore the photoelectric device 122 and first lens
121 are located at the position of same layer, and projection and first lens 121 of the photoelectric device 122 on 110 surface of substrate
Projection on 110 surface of substrate is staggered, and is not overlapped.So first lens 121 can be described to being not affected by
The incident light that photoelectric device 122 influences is collimated, and the transmission of the formed imaging sensor of incident light transmission can be effectively improved
Rate is conducive to the raising of fingerprint image quality.
It should be noted that being formed after the substrate 110 and first lens 121, described in formation in the present embodiment
Photoelectric device 122, i.e., the described photoelectric device 122 are formed after first lens 121.This way can reduce described
Influence of one lens, 121 forming process to 122 performance of photoelectric device, to be conducive to improve the photoelectric device 122
Yield and stability are conducive to improve the yield and stability for being formed by imaging sensor.In other embodiments of the invention,
It can be formed over the substrate after the photoelectric device, form first lens between adjacent photo device.
In the present embodiment, the photoelectric device 122 may include light sensitive diode (not shown) and with the sense
The connected interconnection architecture (not shown) of optical diode.So the light sensitive diode and the interconnection architecture be distributed in it is adjacent
Between first lens 121, it is located in same layer with first lens 121.
Specifically, the formation of the photoelectric device 122 includes a series of film depositions and the semiconductors manufactures work such as graphical
Skill step.The technical process for specifically forming the pixel array is same as the prior art, and details are not described herein by the present invention.Pass through half
Conductor manufacturing process forms the way of the photoelectric device 122, can effectively ensure that be formed by photoelectric device 122 performance and
Yield is conducive to the performance for improving formed imaging sensor.
With reference to Fig. 5 and Fig. 6, in the present embodiment, the forming method further include: formed after the photoelectric device 122, shape
At at least around the light shield layer 123 of first lens 121.Wherein, Fig. 6 is structure edge in box 125 in embodiment illustrated in fig. 5
The overlooking structure diagram in the direction A
The light shield layer 123 is arranged around first lens 121, to limit through 121 transmitted ray of the first lens
Light-emitting angle, can effectively inhibit along other directions propagate light transmission, the generation of stray light can be reduced, be conducive to mention
High first lens 121 can reduce the intensity of noise signal, be conducive to changing for signal-to-noise ratio to the collimating effect of transmitted ray
Kind, performance raising.
As shown in fig. 6, first lens 121 are projected as circle on 110 surface of substrate, so the light shield layer
123 are projected as circular ring shape on 110 surface of substrate.But in other embodiments of the invention, the projection shape of the light shield layer
Shape can change with the variation of first lens shape.
In the present embodiment, the absorptivity of 123 material of light shield layer is 85% or more, that is to say, that the light shield layer 123
Material have comparable absorbing ability, so as to make the light for being projected to the light shield layer 123 largely can be by the screening
Photosphere 123 absorbs, and so as to effectively reduce the generation of stray light, is conducive to improve signal-to-noise ratio.
It should be noted that the thickness of light-emitting angle and the light shield layer 123 through 121 transmitted ray of the first lens
Correlation, thus the thickness of the light shield layer 123 should not it is too big also should not be too small.
If the thickness of the light shield layer 123 is too big, the light-emitting angle of transmitted ray is too small, may will affect light throwing
The transmissivity of described image sensor is penetrated, to influence the intensity of transmitted ray, influences the imaging effect of described image sensor；
If the thickness of the light shield layer 123 is too small, the light-emitting angle of transmitted ray is excessive, may will affect first lens
The limitation of 121 pairs of transmitted ray light-emitting angles is unfavorable for the reduction of stray light, is unfavorable for 121 collimating effect of the first lens
Promotion.Specifically, the thickness of the light shield layer 123 is in 8 μm to 12 μ ms, i.e., the vertical substrate in the present embodiment
On the direction on 110 surfaces, the size of the light shield layer 123 is in 8 μm to 12 μ ms.
It is subsequent also to will form the second lens on the photoelectric device 122 it should be noted that in the present embodiment, it is described
Light shield layer 123 also needs to be arranged around second lens, to limit the angle for being transmitted through the second lens light, and then limits
Make the angle of the acquired light of the photoelectric device 122.Therefore as shown in Figure 5 and Figure 6, the step of forming light shield layer 123
It include: the light shield layer to be formed around first lens 121 and the photoelectric device 122.
In the present embodiment, the material of the light shield layer 123 is organic material, such as resinae dyestuff dispersing type photoresist,
So the step of forming light shield layer 123 includes: to form the light shield layer 123 by way of mask exposure, development.Pass through
This mode forms the way of the light shield layer 123, can effectively improve the processing compatibility to form the light shield layer 123, drop
Low technology difficulty improves yield.
It should be noted that limiting transmitted ray light-emitting angle to enable the light shield layer 123 effectively to play it
Effect, the thickness of the light shield layer 123 are greater than the height of first lens 123, i.e., the direction on vertical 110 surface of substrate
On, the size of the light shield layer 123 is greater than the size of first lens 123.
With reference to Fig. 7 and Fig. 8, in the present embodiment, the forming method further include: second is formed on the photoelectric device thoroughly
Mirror 124.Wherein Fig. 7 is the schematic diagram of the section structure corresponding to Fig. 5, and Fig. 8 is overlooking structure diagram corresponding to Fig. 6.
Second lens 124 are for collimating the light for being transmitted through the photoelectric device 122, so that light be made to use up
Amount can be effectively reduced so that the angle of vertical incidence is projected on the photoelectric device 122 and is acquired by the photoelectric device 122
It is projected to the incident angle of 122 light of photoelectric device, that is, reduces the incidence angle of the acquired light of the photoelectric device 122
Degree；When therefore there is described image sensor to be applied to fingerprint imaging mould group, the setting of second lens 124 can also be effective
The collimation of reflected light is improved, to reduce the ingredient of stray light in reflected light, to achieve the purpose that inhibit noise, is conducive to
The signal-to-noise ratio for improving the fingerprint imaging mould group is conducive to the performance for improving the fingerprint imaging mould group.
In the present embodiment, the photoelectric device 122 and first lens 121 are respectively positioned on the first face of the substrate 110
On, so second lens 124 and first lens 121 are positioned at ipsilateral；And the fingerprint of integrated formed imaging sensor
In imaging modules, incident light caused by light source is propagated along the direction that the first face is directed toward in the second face, so second lens 124
For convex lens, it is raised in the surface of the photoelectric device 122, i.e., the thickness of described first lens 124 is directed toward surrounding side along center
It is gradually reduced upwards.
It should be noted that second lens 124 are projected as circle 110 surface of substrate in the present embodiment.
But the projection of the second lens described in other embodiments of the invention may be other shapes.
In order to enable second lens 124 effectively to realize the effect of collimation, second lens 124 to transmitted ray
Focal length should not it is too big also should not be too small.The height and width phase of the focal length of second lens 124 and second lens 124
It closes, i.e. size in vertical 110 surface direction of substrate of second lens 124 and parallel 110 surface direction of substrate
On size affect the focal lengths of second lens 124.
So the height of second lens 124 should not it is too big also should not be too small, the width of second lens 124 is not
It preferably too greatly also should not be too small.The height of second lens 124 is too big, width is too small, then may make second lens 124
Focal length it is too small, to cause 124 collimating effect of the second lens bad, be unfavorable for transmitted ray with subvertical angle
It is acquired by the photoelectric device 122, and second lens, 124 height is also unfavorable for greatly very much reducing formed imaging sensor
Thickness；The height of second lens 124 is too small, width is too big, then may make the focal length mistake of second lens 124
Greatly, so that 124 collimating effect of the second lens may also be caused bad, and 124 width of the second lens is too big unfavorable
In the area for reducing formed imaging sensor.Specifically, the height of second lens 124 is less than or waits in the present embodiment
In 3 μm, the width of second lens 124 is suitable with the width of the photoelectric device 122, i.e., as shown in figure 8, described second is saturating
Mirror 124 110 surface of substrate projected area and the photoelectric device 122 110 surface of substrate projected area
Quite.
In the present embodiment, the material of second lens 124 is organic material, such as transparent photomask glue.So forming institute
The step of stating the second lens 124 includes: that second lens 124 are formed by way of mask exposure, development.
In addition, in the present embodiment, the step of forming the second lens 124 further include: after mask exposure, development,
Carry out baking processing.Solvent of the baking processing for removing in 124 material of the second lens, makes second lens
124 solidifications.
In addition, the baking processing is also used to adjust the shape of second lens 124.Due to second lens 124
It for organic material, is formed by way of exposing, developing；The process of exposure development is isotropic, thus exposure,
After development, second lens 124 are the shape for forming convex lens；Later in the heating process of the baking processing, described the
Two lens 124 can further be shunk, and the curvature of convex lens increases, and ultimately form suitable second lens 124 of focal length.
Specifically, the baking temperature of the baking processing should not it is too high also should not be too low, baking time it is unsuitable it is too long not yet
It is preferably too short.If second lens may be made if the baking temperature of the baking processing is too high, baking time is too long
124 meeting hypersystoles, to cause the problem that 124 curvature of the second lens is excessive, focal length is too small, but also may increase institute
The heat budget (thermal budget) in imaging sensor forming process is stated, consequently, it is possible to the property of described image sensor
It can impact, be unfavorable for the raising of yield and quality；If if the baking temperature of the baking processing is too low, baking time
It is too short, then it may make 124 undershrinking of the second lens, too small, the focal length mistake so as to cause 124 curvature of the second lens
Big problem, but also the removal of solvent in 124 material of the second lens may be unfavorable for, it is unfavorable for second lens
124 solidification.In the present embodiment, the baking temperature of the baking processing is within the scope of 200 DEG C to 220 DEG C, and baking time is 50
Within the scope of minute to 90 minutes.
In addition, 122 surrounding of photoelectric device is surrounded with the light shield layer 123 in the present embodiment；So forming described the
The step of two lens 124 includes: that the second lens 124 are formed on the photoelectric device 122 that surrounding is surrounded with light shield layer 123.
Light shield layer 123 around second lens 124 setting is projected to 124 light of the second lens for limiting
Incident angle, and then the incident angle for being projected to 122 glazed thread of photoelectric device is limited, other directions biography can be effectively reduced
The light broadcast is projected on the photoelectric device 122, reduces acquisition of the photoelectric device 122 to stray light, is conducive to described
The raising of second lens, 124 collimating effect, is conducive to the inhibition of noise signal.
Specifically, the light shield layer 123 around second lens 124 setting is projected as justifying on 110 surface of substrate
Annular, so second lens 124 are projected as circle on 110 surface of substrate.But in other embodiments of the invention,
The projection of shape of the light shield layer and second lens can change with the variation designed each other.
It should be noted that in order to enable the light shield layer 123 around second lens 124 setting effectively to play
The height of its effect for limiting transmitted ray light-emitting angle, 123 top of light shield layer is greater than the top of second lens 124
Highly, i.e., on the direction on vertical 110 surface of substrate, the size of the light shield layer 123 is greater than second lens 124 and institute
State the sum of the size of photoelectric device 122.
It should also be noted that, the light shield layer 123 is formed before second lens 124 in the present embodiment.This hair
In bright other embodiments, the light shield layer 123 can also be formed after second lens 124 formation.
With reference to Fig. 9, the forming method further include: formed after photoelectric device 122, formed and cover first lens
121 and the photoelectric device 122 encapsulation lamination 140.
In the present embodiment, it is also formed with light shield layer 123 on the substrate 110, is also formed on the photoelectric device 122
Two lens 124；So the step of forming encapsulation lamination 140 includes: to form the covering substrate 110, first lens
121, the encapsulation lamination 140 of the photoelectric device 122, the light shield layer 123 and second lens 124.
The encapsulation lamination 140 is for realizing first lens 121, the photoelectric device 122, the light shield layer 123
And the package isolation of second lens 124 and external environment, avoid exposure in air caused by performance degradation problem.
As shown in figure 9, the step of forming encapsulation lamination 140 includes: to be formed positioned at first lens 121 and described
Planarization layer 141 on photoelectric device 122；Passivation layer 142 is formed on the planarization layer 141.
The planarization layer 141 is filled between adjacent light shield layer 123, improves the flatness on surface, realizes the encapsulation
The package isolation of lamination 140 acts on.
Specifically, improving the filling of the planarization layer 141 to improve the flatness on 141 surface of planarization layer
Effect, in the present embodiment, the step of forming planarization layer 141 includes: that the first filling is formed between adjacent light shield layer 123
Layer (not shown)；The second filled layer (not shown) is formed on the first filled layer.
First filled layer and second filled layer are for constituting the planarization layer, and second filled layer
Top is flushed with the top of the light shield layer 123.It is made up of first filled layer and second filled layer described flat
The way for changing layer, can effectively improve the filling effect of the planarization layer, improve the surface smoothness of the planarization layer, have
Conducive to the quality for improving formed imaging sensor.
It should be noted that in the present embodiment, the forming method further include: formed after the photoelectric device, formed
Before the planarization layer 141, isolated material (not shown) is formed at least on first lens 121；In addition, this reality
It applies in example, the photoelectric device 122 is also formed with the second lens 124；So in first lens 121 and second lens
Isolated material (not shown) is formed on 124.
In order to reduce the planarization layer 141 to the shadow of first lens 121 and 124 collimating effect of the second lens
It rings, the refractive index of the planarization layer material is less than the refractive index of the isolated material.In the present embodiment, the isolated material is
Silicon oxide or silicon nitride, so the refractive index of the isolated material is less than the refractive index of silicon oxide or silicon nitride.For example, described flat
The material of smoothization layer 141 can be the materials such as polyimides.So the material of the planarization layer 141 can pass through coating process
It is formed.
It should be noted that the thickness of the planarization layer 141 should not it is too big also should not be too small.The planarization layer 141
If thickness it is too small, the smooth degree on formed 141 surface of planarization layer may be will affect, be unfavorable for improve institute's formation figure
As the image quality of sensor；If the thickness of the planarization layer 141 is too big, it is unfavorable for formed imaging sensor thickness
Reduction, integrated level raising, it is also possible to cause waste of material, increase technology difficulty the problem of.Specifically, the planarization layer
141 thickness is in 8 μm to 12 μ ms, i.e., in the present embodiment, first filled layer and the second filled layer thickness it
With in 8 μm to 12 μ ms.
The passivation layer 142 be used for protect the planarization layer 141 and covered by the planarization layer 141 first
The structures such as lens 121 and photoelectric device 122 prevent the planarization layer 141 and first lens 121, the photoelectric device
The structures such as 122 are damaged；Furthermore the passivation layer 142 is also used to realize the planarization layer 141 and first lens
121, the structures such as described photoelectric device 122 and external environment are isolated, and prevent the processing of performance degradation phenomenon, such as prevent described
Absorption of the structures such as planarization layer 141 and first lens 121, the photoelectric device 122 to external Environmental Water.
In the present embodiment, the material of the passivation layer 142 is the silicon nitride with higher-density.Other implementations of the present invention
In example, the passivation layer may be the other materials such as aluminium oxide, titanium oxide, silver.In addition, in other embodiments of the invention,
The protective layer can also be laminated construction, such as can be with silicon-nitride and silicon oxide-silicon nitride stack or silicon oxide-silicon nitride-
Silicon oxide stack.So the passivation layer 142 can pass through the film layers such as physical vapour deposition (PVD), chemical vapor deposition atomic layer deposition
Depositional mode is formed.
The thickness of the passivation layer 142 should not it is too big also should not be too small.If the thickness of the passivation layer 142 is too big,
It is unfavorable for the reduction of formed imaging sensor thickness, the raising of integrated level, it is also possible to cause waste of material, increase technology difficulty
The problem of；If the thickness of the passivation layer 142 is too small, it is unfavorable for the planarization layer 141 and first lens
121, the isostructural protection of the photoelectric device 122 and isolation, it is possible that the planarization layer 141 and first lens
121, the phenomenon that the structural damages such as described photoelectric device 122.Specifically, the thickness of the passivation layer 142 existsIt arrivesIn range, i.e., in vertical 110 surface direction of substrate, the size of the passivation layer 142 existsIt arrivesIn range.
Correspondingly, the present invention also provides a kind of imaging sensors.With reference to Fig. 9, it is real to show the image sensor of that present invention one
Apply the schematic diagram of the section structure of example.
Described image sensor includes:
Substrate 110；First lens 121, discrete is set on the substrate 110；Photoelectric device 122 is located at first thoroughly
On substrate 110 between mirror 121.
First lens 121 can collimate the light for transmiting formed imaging sensor, so as to effective
Reduction transmitted ray propagation angle, propagate transmitted ray with the direction on vertical 110 surface of substrate as far as possible.
It should be noted that image sensor application is formed by fingerprint imaging mould group, for obtaining in the present embodiment
Obtain fingerprint image；The setting of first lens 121 can effectively improve the collimation of incident light, reduce incident light and be projected to sense
The incident angle in survey face increases and believes in reflected light so that the ingredient of the smaller light of shooting angle in formed reflected light be made to increase
The ratio of number light；And the raising of incident light collimation, additionally it is possible to effectively reduce the generation of stray light, reduce noise in reflected light
The ratio of light；So the setting of first lens can effectively improve the signal-to-noise ratio of fingerprint imaging mould group, is conducive to raising and refers to
The performance of line imaging modules.
The substrate 110 is used to provide technological operation platform for subsequent technique, is also used to rise in described image sensor
It is acted on to mechanical support.
In the present embodiment, the material of the substrate 110 is glass.Since formed imaging sensor is for constituting ultrathin type
Fingerprint imaging mould group, i.e., in constituted fingerprint imaging mould group, described image sensor between sensing face and light source, so
It sets the material of the substrate 110 to the way of glass, can be improved the transmissivity of incident light produced by light source, be conducive to refer to
The acquisition of print image.In other embodiments of the invention, the material of the substrate be also an option that acrylic or sapphire etc. other
The material or lamination solution structure of light transmission.
The light of 121 pairs of first lens transmission described image sensors collimates.
The substrate 110 has the first face (not indicating in figure) being disposed opposite to each other and the second face (not indicating in figure), described
First lens 121 are located on first face.In the present embodiment, in the fingerprint imaging mould group of integrated formed imaging sensor,
Light source and first lens 121 are located at the two sides of the substrate 110, that is, in constituted fingerprint imaging mould group, light source is located at institute
The side in 110 second face of substrate is stated, incident light caused by light source is propagated along the direction that the first face is directed toward in the second face；So described
First lens 121 are convex lens, are raised in the first face of the substrate 110, i.e., the thickness of described first lens 121 refers to along center
It is gradually reduced on peripherad direction.
It should be noted that the focal length phase of the height and width of first lens 121 with first lens 121
It closes, it is related to the collimating effect of light to first lens 121.So the height of first lens 121 should not be too big
Should not be too small, the width of first lens 121 should not it is too small also should not be too big.
If the height of first lens 121 is too big, if width is too small, i.e., the focal length mistake of described first lens 121
It is small, first lens 121 may be will affect to the collimating effect of transmitted ray, be unfavorable for making transmitted ray in a perpendicular direction
It propagates, and the height of first lens 121 is too big, is also unfavorable for reducing the thickness for being formed by imaging sensor；It is described
If the height of the first lens 121 is too small, if width is too big, i.e., the focal length of described first lens 121 is excessive, also will affect institute
The first lens 121 are stated to the collimating effect of transmitted ray, and if first lens 121 width it is too big, be unfavorable for
Reduce formed image area sensor.
Specifically, the height of first lens 121 is less than or equal to 10 μm in the present embodiment, i.e., the vertical substrate
On the direction on 110 surfaces, the size of first lens 121 is less than or equal to 10 μm；The width of first lens 121 is less than
Or being equal to 10 μm, i.e., on the direction on parallel 110 surface of substrate, the size of first lens is less than or equal to 10 μm.
It should be noted that first lens 121 are projected as justifying on 110 surface of substrate in the present embodiment
Shape.But the projection of the first lens described in other embodiments of the invention may be other shapes.
It should be noted that the substrate 110 and first lens 121 are structure as a whole in the present embodiment, i.e., it is described
Substrate 110 is connected with first lens 121 to be seamless, therefore the material phase of the substrate 110 and first lens 121
Together.In other embodiments of the invention, the substrate and first lens can also be divided into two parts.Specifically, when described
When substrate and first lens are two parts, the material of the substrate and first lens can be the same or different.
The photoelectric device 122 is for acquiring optical signal and realizing the photoelectric conversion of the optical signal to obtain image.
In the present embodiment, image sensor application is formed by fingerprint imaging mould group, for obtaining fingerprint image；Thoroughly
The incident light for penetrating formed imaging sensor is projected in sensing face, forms reflected light in the sensing face, due to it is described enter
It penetrates light to collimate through first lens 121, therefore it is larger to be formed by the lesser light component of shooting angle in reflected light, so
The lesser ratio of shooting angle also increases accordingly in the photoelectric device 122 reflected light collected, i.e., the described photoelectric device 122
In acquired optical signal, signal light ratio is higher, interference light ratio is lower, is conducive to the acquisition of high quality fingerprint image.
The photoelectric device 122 is on the substrate 110 between first lens 121, i.e., the described photoelectric device
122 are located at 110 surface of the substrate that first lens 121 expose, therefore the photoelectric device 122 and first lens
121 are located at the position of same layer, and projection and first lens 121 of the photoelectric device 122 on 110 surface of substrate
Projection on 110 surface of substrate is staggered, and is not overlapped.So first lens 121 can be described to being not affected by
The incident light that photoelectric device 122 influences is collimated, and the transmission of the formed imaging sensor of incident light transmission can be effectively improved
Rate is conducive to the raising of fingerprint image quality.
In the present embodiment, the photoelectric device 122 may include light sensitive diode (not shown) and with the sense
The connected interconnection architecture (not shown) of optical diode.So the light sensitive diode and the interconnection architecture be distributed in it is adjacent
Between first lens 121, it is located in same layer with first lens 121.
As shown in figure 9, in the present embodiment, described image sensor further include: the second lens 124 are located at the phototube
On part 122.
Second lens 124 are for collimating the light for being transmitted through the photoelectric device 122, so that light be made to use up
Amount can be effectively reduced so that the angle of vertical incidence is projected on the photoelectric device 122 and is acquired by the photoelectric device 122
It is projected to the incident angle of 122 light of photoelectric device, that is, reduces the incidence angle of the acquired light of the photoelectric device 122
Degree；When therefore there is described image sensor to be applied to fingerprint imaging mould group, the setting of second lens 124 can also be effective
The collimation of reflected light is improved, to reduce the ingredient of stray light in reflected light, to achieve the purpose that inhibit noise, is conducive to
The signal-to-noise ratio for improving the fingerprint imaging mould group is conducive to the performance for improving the fingerprint imaging mould group.
In the present embodiment, the photoelectric device 122 and first lens 121 are respectively positioned on the first face of the substrate 110
On, so second lens 124 and first lens 121 are positioned at ipsilateral；And the fingerprint of integrated formed imaging sensor
In imaging modules, incident light caused by light source is propagated along the direction that the first face is directed toward in the second face, so second lens 124
For convex lens, it is raised in the surface of the photoelectric device 122, i.e., the thickness of described first lens 124 is directed toward surrounding side along center
It is gradually reduced upwards.
It should be noted that second lens 124 are projected as circle 110 surface of substrate in the present embodiment.
But the projection of the second lens described in other embodiments of the invention may be other shapes.
In order to enable second lens 124 effectively to realize the effect of collimation, second lens 124 to transmitted ray
Focal length should not it is too big also should not be too small.The height and width phase of the focal length of second lens 124 and second lens 124
It closes, i.e. size in vertical 110 surface direction of substrate of second lens 124 and parallel 110 surface direction of substrate
On size affect the focal lengths of second lens 124.
So the height of second lens 124 should not it is too big also should not be too small, the width of second lens 124 is not
It preferably too greatly also should not be too small.The height of second lens 124 is too big, width is too small, then may make second lens 124
Focal length it is too small, to cause 124 collimating effect of the second lens bad, be unfavorable for transmitted ray with subvertical angle
It is acquired by the photoelectric device 122, and second lens, 124 height is also unfavorable for greatly very much reducing formed imaging sensor
Thickness；The height of second lens 124 is too small, width is too big, then may make the focal length mistake of second lens 124
Greatly, so that 124 collimating effect of the second lens may also be caused bad, and second lens, 124 width degree is too very much not
Conducive to the area for reducing formed imaging sensor.Specifically, in the present embodiment, the height of second lens 124 be less than or
Equal to 3 μm, the width of second lens 124 is suitable with the width of the photoelectric device 122, i.e., as shown in figure 8, described second
Lens 124 110 surface of substrate projected area and the photoelectric device 122 110 surface of substrate perspective plane
Product is suitable.
In the present embodiment, the material of second lens 124 is organic material, such as transparent photomask glue.By described second
The material of lens 124 is set as the way of organic matter, can be improved the processing compatibility to form second lens 124, reduces
Technology difficulty improves yield.
In addition, in the present embodiment, described image sensor further include: light shield layer 123, at least around first lens
121。
The light shield layer 123 is arranged around first lens 121, to limit through 121 transmitted ray of the first lens
Light-emitting angle, can effectively inhibit along other directions propagate light transmission, the generation of stray light can be reduced, be conducive to mention
High first lens 121 can reduce the intensity of noise signal, be conducive to changing for signal-to-noise ratio to the collimating effect of transmitted ray
Kind, performance raising.
As shown in fig. 6, first lens 121 are projected as circle on 110 surface of substrate, so the light shield layer
123 are projected as circular ring shape on 110 surface of substrate.But in other embodiments of the invention, the projection shape of the light shield layer
Shape can change with the variation of first lens shape.
In the present embodiment, the absorptivity of 123 material of light shield layer is 85% or more, that is to say, that the light shield layer 123
Material have comparable absorbing ability, so as to make the light for being projected to the light shield layer 123 largely can be by the screening
Photosphere 123 absorbs, and so as to effectively reduce the generation of stray light, is conducive to improve signal-to-noise ratio.
It should be noted that the thickness of light-emitting angle and the light shield layer 123 through 121 transmitted ray of the first lens
Correlation, thus the thickness of the light shield layer 123 should not it is too big also should not be too small.
If the thickness of the light shield layer 123 is too big, the light-emitting angle of transmitted ray is too small, may will affect light throwing
The transmissivity of described image sensor is penetrated, to influence the intensity of transmitted ray, influences the imaging effect of described image sensor；
If the thickness of the light shield layer 123 is too small, the light-emitting angle of transmitted ray is excessive, may will affect first lens
The limitation of 121 pairs of transmitted ray light-emitting angles is unfavorable for the reduction of stray light, is unfavorable for 121 collimating effect of the first lens
Promotion.Specifically, the thickness of the light shield layer 123 is in 8 μm to 12 μ ms, i.e., the vertical substrate in the present embodiment
On the direction on 110 surfaces, the size of the light shield layer 123 is in 8 μm to 12 μ ms.
It should be noted that limiting transmitted ray light-emitting angle to enable the light shield layer 123 effectively to play it
Effect, the thickness of the light shield layer 123 are greater than the height of first lens 123, i.e., the direction on vertical 110 surface of substrate
On, the size of the light shield layer 123 is greater than the size of first lens 123.
In the present embodiment, also there are second lens 124 on the photoelectric device 122；So the light shield layer 123 is also
Around second lens 124.
Light shield layer 123 around second lens 124 setting is projected to 124 light of the second lens for limiting
Incident angle, and then the incident angle for being projected to 122 glazed thread of photoelectric device is limited, other directions biography can be effectively reduced
The light broadcast is projected on the photoelectric device 122, reduces acquisition of the photoelectric device 122 to stray light, is conducive to described
The raising of second lens, 124 collimating effect, is conducive to the inhibition of noise signal.
Specifically, the light shield layer 123 around second lens 124 setting is projected as justifying on 110 surface of substrate
Annular, so second lens 124 are projected as circle on 110 surface of substrate.But in other embodiments of the invention,
The projection of shape of the light shield layer and second lens can change with the variation designed each other.
It should be noted that in order to enable the light shield layer 123 around second lens 124 setting effectively to play
The height of its effect for limiting transmitted ray light-emitting angle, 123 top of light shield layer is greater than the top of second lens 124
Highly, i.e., on the direction on vertical 110 surface of substrate, the size of the light shield layer 123 is greater than second lens 124 and institute
State the sum of the size of photoelectric device 122.
In the present embodiment, the material of the light shield layer 123 is organic material, such as resinae dyestuff dispersing type photoresist.
It sets the material of the light shield layer 123 to the way of organic matter, can be improved the process compatible to form the light shield layer 123
Property, technology difficulty is reduced, yield is improved.
It should be noted that in the present embodiment, described image sensor further include: encapsulation lamination 140, covering described first
Lens 121 and the photoelectric device 122.
In the present embodiment, also there is light shield layer 123 on the substrate 110, also have second on the photoelectric device 122
Lens 124；The encapsulation lamination 140 also covers the light shield layer 123 and second lens 124.
The encapsulation lamination 140 is for realizing first lens 121, the photoelectric device 122, the light shield layer 123
And the package isolation of second lens 124 and external environment, avoid exposure in air caused by performance degradation problem.
In the present embodiment, the encapsulation lamination 140 includes: planarization layer 141, is located at first lens 121 and described
On photoelectric device 122；Passivation layer 142 is located on the planarization layer 141.
The planarization layer 141 is filled between adjacent light shield layer 123, improves the flatness on surface, realizes the encapsulation
The package isolation of lamination 140 acts on.
Specifically, improving the filling of the planarization layer 141 to improve the flatness on 141 surface of planarization layer
Effect, in the present embodiment, the planarization layer 141 include: the first filled layer between adjacent light shield layer 123 (in figure not
It shows)；The second filled layer (not shown) on the first filled layer.
First filled layer and second filled layer are for constituting the planarization layer, and second filled layer
Top is flushed with the top of the light shield layer 123.It is made up of first filled layer and second filled layer described flat
The way for changing layer, can effectively improve the filling effect of the planarization layer, improve the surface smoothness of the planarization layer, have
Conducive to the quality for improving formed imaging sensor.
It should be noted that in the present embodiment, described image sensor further include: isolated material (not shown), position
Between the planarization layer 141 and first lens 121.In addition, described image sensor further includes position in the present embodiment
In the second lens 124 on the photoelectric device 122, the isolated material is also located at the planarization layer and second lens
Between 124.
In order to reduce the planarization layer 141 to the shadow of first lens 121 and 124 collimating effect of the second lens
It rings, the refractive index of 141 material of planarization layer is less than the refractive index of the isolated material.In the present embodiment, the isolation material
Material is silicon oxide or silicon nitride, so the refractive index of the isolated material is less than the refractive index of silicon oxide or silicon nitride.For example, institute
The material for stating planarization layer 141 can be the materials such as polyimides.
It should be noted that the thickness of the planarization layer 141 should not it is too big also should not be too small.The planarization layer 141
If thickness it is too small, the smooth degree on formed 141 surface of planarization layer may be will affect, be unfavorable for improve institute's formation figure
As the image quality of sensor；If the thickness of the planarization layer 141 is too big, it is unfavorable for formed imaging sensor thickness
Reduction, integrated level raising, it is also possible to cause waste of material, increase technology difficulty the problem of.Specifically, the planarization layer
141 thickness is in 8 μm to 12 μ ms, i.e., in the present embodiment, first filled layer and the second filled layer thickness it
With in 8 μm to 12 μ ms.
The passivation layer 142 be used for protect the planarization layer 141 and covered by the planarization layer 141 first
The structures such as lens 121 and photoelectric device 122 prevent the planarization layer 141 and first lens 121, the photoelectric device
The structures such as 122 are damaged；Furthermore the passivation layer 142 is also used to realize the planarization layer 141 and first lens
121, the structures such as described photoelectric device 122 and external environment are isolated, and prevent the processing of performance degradation phenomenon, such as prevent described
Absorption of the structures such as planarization layer 141 and first lens 121, the photoelectric device 122 to external Environmental Water.
In the present embodiment, the material of the passivation layer 142 is the silicon nitride with higher-density.Other implementations of the present invention
In example, the passivation layer may be the other materials such as aluminium oxide, titanium oxide, silver.In addition, in other embodiments of the invention,
The protective layer can also be laminated construction, such as can be with silicon-nitride and silicon oxide-silicon nitride stack or silicon oxide-silicon nitride-
Silicon oxide stack.So the passivation layer 142 can pass through the film layers such as physical vapour deposition (PVD), chemical vapor deposition atomic layer deposition
Depositional mode is formed.
The thickness of the passivation layer 142 should not it is too big also should not be too small.If the thickness of the passivation layer 142 is too big,
It is unfavorable for the reduction of formed imaging sensor thickness, the raising of integrated level, it is also possible to cause waste of material, increase technology difficulty
The problem of；If the thickness of the passivation layer 142 is too small, it is unfavorable for the planarization layer 141 and first lens
121, the isostructural protection of the photoelectric device 122 and isolation, it is possible that the planarization layer 141 and first lens
121, the phenomenon that the structural damages such as described photoelectric device 122.Specifically, the thickness of the passivation layer 142 existsIt arrivesIn range, i.e., in vertical 110 surface direction of substrate, the size of the passivation layer 142 existsIt arrivesIn range.
In addition, the present invention also provides a kind of fingerprint imaging mould groups.With reference to Figure 10, fingerprint imaging mould group one of the present invention is shown
The schematic diagram of the section structure of embodiment.
The fingerprint imaging mould group includes:
Light source 210, for generating initial light；Imaging sensor 220, described image sensor 220 are provided by the present invention
Imaging sensor, first lens make the initial light form the incident light；Sensing face 230, the incident light is in institute
State the reflected light for being formed in sensing face 230 and carrying finger print information；The photoelectric device acquires the reflected light to obtain fingerprint
Image.
First lens can play collimating effect to the initial light, thus make formed incident light with it is smaller enter
Firing angle is projected in the sensing face 230, that is, reduces the incidence angle that the incident light is projected to the sensing face 230, and then make
The ingredient of the smaller light of shooting angle increases in formed reflected light, increases the ratio of signal light in reflected light；And incident light
The raising of collimation, additionally it is possible to effectively reduce the generation of stray light, reduce the ratio of noise light in reflected light；So image sensing
The use of device can effectively improve the signal-to-noise ratio of fingerprint imaging mould group, be conducive to the performance for improving fingerprint imaging mould group.
In conjunction with reference Figure 11, show in the group embodiment of fingerprint imaging mould shown in Figure 10, structure refers in acquisition in box 240
Light path schematic diagram when line.
The light source 210 is for generating initial light.
In the present embodiment, the light source 210 be area source, including light emitting diode (not shown) and be located at the hair
The light guide plate (not shown) of optical diode side.Light caused by the light emitting diode is projected to the light guide plate
It is interior, it conducts to form the initial light 211 of light distribution more evenly through the light guide plate.Area source is set by the light source 210
Way can effectively improve the uniformity of the initial light 211, be conducive to the quality for improving obtained fingerprint image.This hair
In bright other embodiments, the light source may be the light source of the other forms such as linear light source or point light source.For example, the light source can
Think single light emitting diode.
Initial light 211 caused by the light source 210 can be visible light, or black light.Specifically, described
Initial light 211 can be black light, purple light, blue light, green light, sodium yellow, red light, near infrared light or white light etc.
Color.
Described image sensor 220 is for making the initial light 211 form incident light 212.Described image sensor 220 is
The image sensor of that present invention, specific technical solution refer to the specific embodiment of aforementioned imaging sensor, and the present invention is no longer superfluous herein
It states.
The initial light 211 is conducted through the light guide plate and is formed, therefore the initial light 211 includes multiple angle
Spend the direction propagated；The initial light 211 will receive the standard of first lens 221 when transmiting described image sensor 220
Directly, to form incident light 212.
In the present embodiment, described image sensor 220 further include: light shield layer 224.The light shield layer 224 has comparable
Absorbing ability.Therefore the incident light 212 for being projected to the light shield layer 240 can be absorbed by the light shield layer 224.So the shading
The presence of layer 224 can effectively limit the exit direction and shooting angle of formed incident light 212, can effectively reduce to be formed
Incident light 212 in stray light generation, be conducive to inhibit noise, improve signal-to-noise ratio.
The sensing face 230 is for receiving touch.As shown in figure 11, when carrying out fingerprint sensing, the incidence light projection
On to the sensing face 230, reflection or refraction occur in the sensing face 230, carries the anti-of finger print information to be formed
Penetrate light 231.
Specifically, the fingerprint imaging mould group further includes that the upper cover plate to shield (is not marked in figure in the present embodiment
Show), the sensing face 230 is the upper cover plate backwards to the surface of the light source 210.Specifically, the material of the upper cover plate can
Think glass.
Since the incident light 212 collimated through first lens 221 is sensed with approximately perpendicular angular transmission described image
Device 220, therefore the incident light 212 is on approximately perpendicular angular transmission to the sensing face 230, thus formed reflected light
231 with the outgoing of subvertical direction, so signal light intensity is larger in the reflected light 231, noise luminous intensity is smaller.
The reflected light 231 is projected in described image sensor 220 to be acquired by the photoelectric device 222；The photoelectricity
The optical signal of the reflected light 231 is converted to electric signal to obtain fingerprint image by device 222.
In the present embodiment, also there are the second lens 223 on the photoelectric device 222, the reflected light 231 transmits described the
It is just acquired by the photoelectric device 222 after two lens 223, the reflected light 231 is in the process for transmiting second lens 223
In collimating effect by second lens 223, therefore the reflected light 231 with angle vertical as far as possible by the phototube
Part 222 acquires, so the setting of second lens 223 can be played the role of improving signal-to-noise ratio.
To sum up, first lens can collimate the light of transmission described image sensor, so as to effective
The propagation angle for reducing transmitted ray propagates transmitted ray with the direction of the vertical substrate surface as far as possible；Therefore there is institute
The collimation of incident light can be effectively improved by stating imaging sensor, reduce the incident angle that incident light is transmitted through sensing face, can
The generation of stray light is effectively reduced, to increase the ratio of signal light in reflected light, the ratio of noise light is reduced, is conducive to fingerprint
The raising of imaging modules signal-to-noise ratio is conducive to the improvement of fingerprint imaging module performance.Moreover, in optinal plan of the present invention, it is described
Imaging sensor further include: the second lens on the photoelectric device, second lens, which can effectively reduce, to be transmitted through
The incident angle of the photoelectric device light, that is, reduce the incident angle of the acquired light of the photoelectric device；Therefore there is institute
Image sensor application is stated when fingerprint imaging mould group, described image sensor can also effectively improve the collimation of reflected light,
To reduce the ingredient of stray light in reflected light, and then achieve the purpose that inhibit noise.In addition, in optinal plan of the present invention, institute
State imaging sensor further include: light shield layer, the light shield layer are at least arranged around first lens；There are the second lens
In imaging sensor, the light shield layer is also arranged around second lens.The absorptivity of the material of the light shield layer is higher, energy
It is enough to realize that the purpose for absorbing stray light is conducive to improvement, the performance of signal-to-noise ratio so as to effectively reduce the intensity of noise signal
Raising.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (28)
1. a kind of forming method of imaging sensor characterized by comprising
Substrate is formed, there are multiple the first discrete lens on the substrate；
Form the photoelectric device between the first lens on substrate.
2. forming method as described in claim 1, which is characterized in that formed substrate the step of include:
Initial substrate is provided；
The part initial substrate is removed, the substrate and first lens are formed.
3. forming method as claimed in claim 2, which is characterized in that it is described initial to remove part by way of wet etching
Substrate.
4. forming method as claimed in claim 2, which is characterized in that the forming method further include:
It is formed after the substrate, is formed before the photoelectric device, surface shape is carried out to the substrate and first lens
Looks processing.
5. forming method as claimed in claim 4, which is characterized in that the substrate and described by way of dry etching
First lens carry out surface topography processing.
6. forming method as described in claim 1, which is characterized in that the forming method further include: form the phototube
After part, the second lens are formed on the photoelectric device.
7. forming method as claimed in claim 6, which is characterized in that the material of second lens is organic material；
Second lens are formed by way of mask exposure, development.
8. forming method as claimed in claim 7, which is characterized in that the step of forming second lens further include: covering
After film exposure, development, baking processing is carried out.
9. forming method as described in claim 1, which is characterized in that the forming method further include: form the phototube
After part, the light shield layer at least around first lens is formed.
10. forming method as claimed in claim 9, which is characterized in that the material of the light shield layer is organic material；
The light shield layer is formed by way of mask exposure, development.
11. forming method as claimed in claim 9, which is characterized in that formed around first lens and the phototube
The light shield layer of part；
The second lens are formed on the photoelectric device that surrounding is surrounded with light shield layer.
12. forming method as described in claim 1, which is characterized in that the forming method further include: formed photoelectric device it
Afterwards, the encapsulation lamination of covering first lens and the photoelectric device is formed.
13. forming method as claimed in claim 12, which is characterized in that formed the encapsulation lamination the step of include:
Form the planarization layer being located on first lens and the photoelectric device；
Passivation layer is formed on the planarization layer.
14. forming method as claimed in claim 13, which is characterized in that the forming method further include: form the photoelectricity
It after device, is formed before the planarization layer, at least forms isolated material on first lens.
15. forming method as claimed in claim 14, which is characterized in that be also formed with the second lens on the photoelectric device；
Isolated material is formed on first lens and second lens.
16. a kind of imaging sensor characterized by comprising
Substrate；
First lens, discrete is set on the substrate；
Photoelectric device, on the substrate between the first lens.
17. imaging sensor as claimed in claim 16, which is characterized in that first lens and the substrate are integrated knot
Structure.
18. the imaging sensor as described in claim 16 or 17, which is characterized in that the material of the substrate and first lens
Expect identical.
19. imaging sensor as claimed in claim 16, which is characterized in that described image sensor further include: the second lens,
On the photoelectric device.
20. imaging sensor as claimed in claim 16, which is characterized in that described image sensor further include: light shield layer, until
Less around first lens.
21. imaging sensor as claimed in claim 20, which is characterized in that the absorptivity of the shading layer material 85% with
On.
22. imaging sensor as claimed in claim 20, which is characterized in that described image sensor further include: be located at described
The second lens on photoelectric device；
The light shield layer is also around second lens.
23. imaging sensor as claimed in claim 16, which is characterized in that described image sensor further include: encapsulation lamination,
Cover first lens and the photoelectric device.
24. imaging sensor as claimed in claim 23, which is characterized in that the encapsulation lamination includes:
Planarization layer is located on first lens and the photoelectric device；
Passivation layer is located on the planarization layer.
25. imaging sensor as claimed in claim 24, which is characterized in that described image sensor further include: isolated material,
Between the planarization layer and first lens.
26. imaging sensor as claimed in claim 25, which is characterized in that described image sensor further include: be located at described
The second lens on photoelectric device；
The isolated material is also located between the planarization layer and second lens.
27. the imaging sensor as described in claim 25 or 26, which is characterized in that the refractive index of the planarization layer material is small
In the refractive index of the isolated material.
28. a kind of fingerprint imaging mould group characterized by comprising
Light source, for generating initial light；
Imaging sensor, described image sensor is as described in claim 16 to claim 27 any one claim, institute
Stating the first lens makes the initial light form the incident light；
Sensing face, the incident light form the reflected light for carrying finger print information in the sensing face；
The photoelectric device acquires the reflected light to obtain fingerprint image.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710429686.XA CN109037248A (en) | 2017-06-08 | 2017-06-08 | Imaging sensor and forming method thereof, fingerprint imaging mould group |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710429686.XA CN109037248A (en) | 2017-06-08 | 2017-06-08 | Imaging sensor and forming method thereof, fingerprint imaging mould group |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109934144A (en) * | 2019-03-01 | 2019-06-25 | 惠科股份有限公司 | Fingerprint input device and display device |
| CN110059562A (en) * | 2019-03-18 | 2019-07-26 | 昆山丘钛微电子科技有限公司 | Display device and electronic device |
| CN110245631A (en) * | 2019-06-20 | 2019-09-17 | 厦门天马微电子有限公司 | Display panel and fingerprint recognition display device |
| CN110728266A (en) * | 2019-10-30 | 2020-01-24 | 维沃移动通信（杭州）有限公司 | Display module and electronic equipment |
| CN111095274A (en) * | 2019-07-25 | 2020-05-01 | 深圳市汇顶科技股份有限公司 | Fingerprint identification module under screen, LCD optical fingerprint identification system and electronic equipment |
| CN111209803A (en) * | 2019-12-24 | 2020-05-29 | 深圳阜时科技有限公司 | Optical detection device and electronic apparatus |
| CN112861566A (en) * | 2019-11-12 | 2021-05-28 | 上海箩箕技术有限公司 | Fingerprint identification device and fingerprint identification method and forming method thereof |
| CN113296278A (en) * | 2020-02-24 | 2021-08-24 | 宁波激智科技股份有限公司 | Alignment film, interference-reducing alignment film, laminating alignment film, image recognition module and preparation method thereof |
| TWI755076B (en) * | 2020-05-05 | 2022-02-11 | 神盾股份有限公司 | Electronic device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104182727A (en) * | 2014-05-16 | 2014-12-03 | 深圳印象认知技术有限公司 | Ultra-thin fingerprint and palm print collection device, and fingerprint and palm print collection method |
| CN105550664A (en) * | 2016-01-08 | 2016-05-04 | 上海箩箕技术有限公司 | Optical fingerprint sensor module |
| CN106773219A (en) * | 2017-02-07 | 2017-05-31 | 京东方科技集团股份有限公司 | A kind of display device |
-
2017
- 2017-06-08 CN CN201710429686.XA patent/CN109037248A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104182727A (en) * | 2014-05-16 | 2014-12-03 | 深圳印象认知技术有限公司 | Ultra-thin fingerprint and palm print collection device, and fingerprint and palm print collection method |
| CN105550664A (en) * | 2016-01-08 | 2016-05-04 | 上海箩箕技术有限公司 | Optical fingerprint sensor module |
| CN106773219A (en) * | 2017-02-07 | 2017-05-31 | 京东方科技集团股份有限公司 | A kind of display device |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109934144A (en) * | 2019-03-01 | 2019-06-25 | 惠科股份有限公司 | Fingerprint input device and display device |
| CN110059562A (en) * | 2019-03-18 | 2019-07-26 | 昆山丘钛微电子科技有限公司 | Display device and electronic device |
| CN110059562B (en) * | 2019-03-18 | 2021-12-14 | 昆山丘钛生物识别科技有限公司 | Display device and electronic device |
| CN110245631B (en) * | 2019-06-20 | 2021-09-21 | 厦门天马微电子有限公司 | Display panel and fingerprint identification display device |
| CN110245631A (en) * | 2019-06-20 | 2019-09-17 | 厦门天马微电子有限公司 | Display panel and fingerprint recognition display device |
| CN111095274A (en) * | 2019-07-25 | 2020-05-01 | 深圳市汇顶科技股份有限公司 | Fingerprint identification module under screen, LCD optical fingerprint identification system and electronic equipment |
| CN111095274B (en) * | 2019-07-25 | 2023-10-24 | 深圳市汇顶科技股份有限公司 | Under-screen fingerprint identification module, LCD optical fingerprint identification system and electronic equipment |
| CN110728266A (en) * | 2019-10-30 | 2020-01-24 | 维沃移动通信（杭州）有限公司 | Display module and electronic equipment |
| CN112861566A (en) * | 2019-11-12 | 2021-05-28 | 上海箩箕技术有限公司 | Fingerprint identification device and fingerprint identification method and forming method thereof |
| CN111209803A (en) * | 2019-12-24 | 2020-05-29 | 深圳阜时科技有限公司 | Optical detection device and electronic apparatus |
| CN113296278A (en) * | 2020-02-24 | 2021-08-24 | 宁波激智科技股份有限公司 | Alignment film, interference-reducing alignment film, laminating alignment film, image recognition module and preparation method thereof |
| CN113296278B (en) * | 2020-02-24 | 2023-04-18 | 宁波激智科技股份有限公司 | Interference reduction collimation film, laminating type collimation film, image identification module and preparation method |
| TWI755076B (en) * | 2020-05-05 | 2022-02-11 | 神盾股份有限公司 | Electronic device |
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