CN109037120B - Film deposition device - Google Patents
Film deposition device Download PDFInfo
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- CN109037120B CN109037120B CN201811100613.7A CN201811100613A CN109037120B CN 109037120 B CN109037120 B CN 109037120B CN 201811100613 A CN201811100613 A CN 201811100613A CN 109037120 B CN109037120 B CN 109037120B
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- 230000008021 deposition Effects 0.000 title claims abstract description 41
- 238000009826 distribution Methods 0.000 claims abstract description 92
- 239000000376 reactant Substances 0.000 claims abstract description 61
- 238000005192 partition Methods 0.000 claims abstract description 30
- 238000009828 non-uniform distribution Methods 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims description 40
- 238000000926 separation method Methods 0.000 claims description 21
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 abstract description 136
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000005452 bending Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 16
- 230000001276 controlling effect Effects 0.000 description 12
- 230000015654 memory Effects 0.000 description 8
- 229940095676 wafer product Drugs 0.000 description 5
- 238000011161 development Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to the technical field of semiconductor manufacturing, in particular to a film deposition device. The film deposition apparatus includes: an adjustment section including a partition surface disposed toward a wafer surface and a plurality of spouts located at the partition surface for delivering a reactant to the wafer surface; and the control part is used for respectively controlling whether each nozzle is opened or not so as to realize the non-uniform distribution of the reactant density on the surface of the wafer. The invention can form a film layer with non-uniform thickness distribution on the surface of the wafer, realizes the balance of the wafer bending degree distribution, is suitable for wafers with various shapes, and effectively improves the quality of wafer products.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a film deposition device.
Background
With the development of planar flash memories, the production process of semiconductors has made tremendous progress. But in recent years, the development of planar flash memory has met with various challenges: physical limits, current development technology limits, stored electron density limits, and the like. In this context, to address the difficulties encountered with planar flash memories and the pursuit of lower unit cell production costs, various three-dimensional (3D) flash memory structures have been developed, such as 3D NOR flash and 3D NAND flash.
The 3D NAND memory uses the small volume and large capacity as starting points, uses the high integration of stacking the storage units layer by layer in a three-dimensional mode as a design concept, produces the memory with high storage density per unit area and high performance of the storage units, and has become the mainstream technology of the design and production of the emerging memory.
However, after the wafer is processed by various semiconductor processes, the curvature distribution of the wafer cannot reach equilibrium, so that the wafer is in a warped state, and the quality of a wafer product is seriously affected.
Therefore, how to improve the curvature distribution of the wafer and improve the quality of the wafer product is a technical problem to be solved at present.
Disclosure of Invention
The invention provides a film deposition device which is used for solving the problem of unbalanced curvature distribution of a wafer after a multi-step treatment process in the prior art so as to improve the quality of a wafer product.
In order to solve the above problems, the present invention provides a film deposition apparatus, comprising:
an adjustment section including a partition surface disposed toward a wafer surface and a plurality of spouts located at the partition surface for delivering a reactant to the wafer surface;
and the control part is used for respectively controlling whether each nozzle is opened or not so as to realize the non-uniform distribution of the density of the reactant on the surface of the wafer.
Preferably, the control part is further configured to obtain a curvature distribution of the wafer, and control whether each nozzle is opened according to the curvature distribution, so that the thickness of the film layer generated by the reactant is unevenly distributed on the surface of the wafer.
Preferably, a plurality of the spouts are uniformly distributed over the entire partition surface.
Preferably, the regulating part comprises a zone control gas disk; the zone control gas panel includes:
a gas chamber for containing the reactant in a gaseous state;
the separation surface comprises a first separation surface positioned on one side of the gas chamber facing the wafer.
Preferably, the plurality of spouts includes a plurality of nozzle holes provided on the first partition surface.
Preferably, the nozzle holes are regular hexagonal holes.
Preferably, the wafer processing apparatus further comprises a reaction chamber for accommodating the wafer; the adjustment portion includes an alignment structure; the alignment structure includes:
the separation plate is positioned in the reaction chamber and is used for adjusting the density distribution of the reactants in a plasma state on the surface of the wafer; the method comprises the steps of carrying out a first treatment on the surface of the
The separation surface comprises a second separation surface which is arranged towards one side of the wafer in the separation plate.
Preferably, a plurality of the spouts includes a plurality of alignment holes provided on the second partition surface.
Preferably, the wafer is a saddle wafer or a bowl wafer.
Preferably, the film deposition device is a plasma chemical vapor deposition device.
According to the film deposition device provided by the invention, the film with non-uniform thickness distribution is deposited on the surface of the wafer by controlling the density distribution of the reactant on the surface of the wafer, and the non-uniform thickness distribution stress is applied to the wafer by using the film with non-uniform thickness distribution, so that the balance of the wafer bending distribution is finally realized, and the quality of wafer products is effectively improved; the film deposition device provided by the invention has a wide application range, and can balance the curvature distribution of wafers with various shapes.
Drawings
FIG. 1 is a schematic view of the overall structure of a film deposition apparatus according to an embodiment of the present invention;
FIG. 2A is a schematic view of the structure of a zone control gas disk according to an embodiment of the present invention with all nozzle holes open;
FIG. 2B is a schematic view of a portion of a partitioned control gas panel in which nozzle holes are opened according to an embodiment of the present invention;
FIG. 3 is a schematic view of an alignment structure in an embodiment of the invention;
fig. 4 is a flow chart of a method of balancing wafer bow distribution in accordance with an embodiment of the present invention.
Detailed Description
The following describes in detail the specific embodiments of the film deposition apparatus provided in the present invention with reference to the accompanying drawings.
The wafer may have an unbalanced curvature distribution during the manufacturing process and during the subsequent fabrication of electronic devices on the wafer surface, resulting in warpage of the wafer. The occurrence of wafer warpage causes various problems, such as falling of stacked films on the surface of the wafer, wafer breakage, unstable layout alignment performance, failure of the subsequent process to suck the wafer Cheng Xipan, failure of the subsequent process, and finally unstable performance of the wafer product, and reduced yield and yield of the wafer product.
Bowl wafers are a common state of unbalanced wafer bow distribution. For bowl-shaped wafers, the bow distribution is typically balanced by depositing a film on the back side of the wafer (the surface opposite the front side where the device structures are formed or where the device structures are preformed) to balance the bow distribution in the X-direction as well as in the Y-direction (the direction perpendicular to the X-direction). This is because the main reason for the wafer with unbalanced curvature distribution is stress, and by depositing the film layer on the back surface, the stress on the front surface of the wafer can be counteracted, so as to improve the problem of unbalanced wafer curvature distribution.
Although the bowl-shaped wafer can adopt the existing film deposition device to deposit the film on the back of the wafer so as to balance the curvature distribution, the bowl-shaped wafer is very easy to be converted into a saddle-shaped wafer after being processed by various manufacturing processes of a three-dimensional device (such as a 3D NAND memory). Saddle wafers, due to their structural particularities, currently have no effective way to balance their bow profile.
In order to solve the above-mentioned problems, the present embodiment provides a film deposition apparatus, and fig. 1 is a schematic overall structure of the film deposition apparatus according to the embodiment of the present invention. As shown in fig. 1, the film deposition apparatus provided in this embodiment includes an adjusting section and a control section 15.
The adjusting part comprises a separation surface arranged towards the surface of the wafer 10 and a plurality of nozzles positioned on the separation surface, wherein the nozzles are used for conveying reactants to the surface of the wafer 10; the control part 15 is configured to control whether each of the nozzles is opened, so as to implement non-uniform distribution of the reactant density on the surface of the wafer 10. Preferably, the wafer 10 is a saddle wafer or a bowl wafer.
Specifically, the film deposition apparatus includes a reaction chamber for accommodating a wafer, the wafer 10 is placed on the surface of a support table 11 in the reaction chamber, and the reactant is isolated from the wafer 10 by the separation surface. Each of the nozzles has an independent opening and closing function, and the control part 15 can control whether each nozzle is opened or not, respectively. Since the reactants are transferred to the surface of the wafer 10 through the nozzles, the path of the reactants transferred to the surface of the wafer 10 can be adjusted by controlling whether each nozzle is opened, so as to control the non-uniform density distribution of the reactants on the surface of the wafer 10, and finally, the surface of the wafer 10 is deposited to form a film layer with non-uniform thickness distribution.
Preferably, the control part is further configured to obtain a curvature distribution of the wafer, and control whether each nozzle is opened according to the curvature distribution, so that the thickness of the film layer generated by the reactant is unevenly distributed on the surface of the wafer.
Specifically, the control unit 15 in this embodiment may obtain the curvature distribution of the wafer 10, further adjust the thickness distribution of the film deposited on the surface of the wafer 10 according to the curvature distribution of the wafer 10, and balance the curvature distribution of the wafer 10 by using different stresses of different thicknesses of the film to offset the stresses of different sizes in different areas on the surface of the wafer 10.
In order to enable the film deposition device to be suitable for wafers with various shapes, the application range of the film deposition device is enlarged, and preferably, a plurality of nozzles are uniformly distributed on the whole separation surface. In this way, the nozzles at different positions on the separation surface can be opened as required, so as to accurately adjust the density distribution of the reactant on the surface of the wafer 10, and form a film layer with various thickness distributions.
Fig. 2A is a schematic structural view of the partition control gas panel according to the embodiment of the present invention when all nozzle holes are opened, and fig. 2B is a schematic structural view of the partition control gas panel according to the embodiment of the present invention when part of the nozzle holes are opened. In order to simplify the structure of the film deposition apparatus, it is preferable that the adjusting part includes a zone control gas disk as shown in fig. 1, 2A, and 2B; the zone control gas panel includes: a gas chamber 131 for containing the reactant in a gaseous state; the separation surface comprises a first separation surface 21 on the side of the gas chamber 131 facing the wafer 10. More preferably, a plurality of the spouts includes a plurality of nozzle holes 132 provided on the first partition surface 21.
In particular, the zone control gas disk may be located at the top of the reaction chamber and the wafer 10 is located on the support table 11 located at the bottom of the reaction chamber. The housing 20 of the zone control gas disk surrounds the gas chamber 31, and the reactant in the gas state is transferred from the outside to the gas chamber 131 and is transferred to the surface of the wafer 10 through the nozzle holes 132 on the first partition surface 21.
In order to simplify the control step, the first partition surface 21 may be divided into a plurality of first sub-areas 211, each first sub-area 211 includes a plurality of (e.g. 1 or more) nozzle holes 132 therein, and the control section 15 may be capable of controlling all the nozzle holes 132 in each first sub-area 211 to be simultaneously opened and simultaneously closed, so as to implement adjustment of the density distribution of the gaseous reactants flowing to the surface of the wafer 10 through partition control. Specifically, according to the curvature distribution of the wafer 10, the control portion 15 may cause the nozzle holes 132 in one or more first sub-regions to be simultaneously opened, and the nozzle holes in other first sub-regions to be closed, for example, cause the nozzle holes 132 in the first sub-region (e.g., one or more first sub-regions included in a dashed frame in fig. 2B) located at the edge of the first partition surface 21 to be completely closed, and cause the nozzle holes 132 in other first sub-regions to be completely opened, so as to assume the state shown in fig. 2B.
In this embodiment, the cross-sectional shape of the nozzle hole 132 along the radial direction is hexagonal, and those skilled in the art may select other shapes of nozzle holes, such as circular, as required.
In order to achieve fine adjustment of the thickness distribution of the film deposited on the surface of the wafer 10, the opening size of the nozzle hole 132 may also be controlled, that is, the proportion of the opening portion of the nozzle hole 132 in the cross section in the radial direction of the nozzle hole 132 may be adjusted.
Fig. 3 is a schematic view of an alignment structure in an embodiment of the present invention. Preferably, as shown in fig. 1 and 3, the adjusting part includes an alignment structure; the alignment structure includes: a separation plate 141 located in the reaction chamber, wherein the separation plate 141 is used for adjusting the density distribution of the reactants in a plasma state on the surface of the wafer 10; the partition surface includes a second partition surface 143 of the partition plate 141 disposed toward the wafer 10 side. More preferably, a plurality of the spouts includes a plurality of alignment holes 142 provided on the second partition surface 143.
Specifically, a radio frequency signal is applied to the reaction chamber such that a radio frequency electric field is formed inside the reaction chamber. The partition 141 divides the reaction chamber into a first chamber 121 and a second chamber 122, and the wafer 10 is placed in the second chamber 122. After the gaseous reactant enters the first chamber 121, for example, after entering the first chamber 121 from the zonal control gas disk, glow discharge occurs in the first chamber 121, generating the reactant in a plasma state, and the reactant in a plasma state is transferred to the surface of the wafer 10 through the alignment holes 142. The control portion 15 may open and close a part of the alignment holes 142 according to the curvature distribution of the wafer 10, for example, the alignment holes 142 located in the edge regions on two opposite sides of the second partition surface 143 may be completely closed, and the alignment holes 142 in other regions may be completely opened.
In order to simplify the control procedure, the second partition surface 143 may be divided into a plurality of second sub-areas, each of which includes a plurality of alignment holes 142, and the control part 15 may control all of the alignment holes 142 in each of the second sub-areas to be simultaneously opened and simultaneously closed, so that the adjustment of the reactant density distribution of the plasma state flowing to the surface of the wafer 10 is achieved through the partition control.
In order to simplify the overall structure of the film deposition device, the film deposition device further comprises a plurality of collimators; the collimators are arranged in the alignment holes 142 one by one; the control part 15 is connected with a plurality of collimators at the same time and is used for respectively controlling whether each collimator is opened or not. That is, the control part 15 is connected to a plurality of collimators at the same time, and controls whether the alignment holes 142 are opened by controlling whether the collimators are opened.
The alignment structure and the partition control gas disk may be simultaneously disposed in the film deposition apparatus, or only the partition control gas disk or the alignment structure may be disposed, which may be selected by a person skilled in the art according to actual needs. When the alignment structure and the partition control gas disk are simultaneously disposed in the reaction chamber of the film deposition apparatus, the alignment structure is located between the partition control gas disk and the wafer 10.
Preferably, the film deposition device is a plasma chemical vapor deposition device. In other embodiments, the film deposition apparatus may also be a plasma physical vapor deposition apparatus.
Moreover, the present embodiment also provides a method for balancing wafer curvature distribution, fig. 4 is a flowchart of a method for balancing wafer curvature distribution in the embodiment of the present invention, where the device used for balancing wafer curvature distribution may be a film deposition device as shown in fig. 1, fig. 2A, fig. 2B, and fig. 3, and of course, a person skilled in the art may select other devices as needed to achieve the balancing of wafer curvature, and this embodiment is described by taking the film deposition device as an example. As shown in fig. 1 to 4, the method for balancing the wafer bending degree distribution according to the present embodiment includes the following steps:
in step S41, a wafer 10 is provided. The wafer 10 may be a single crystal wafer that has not undergone any processing, or may be a semi-finished wafer that has undergone multiple semiconductor processing processes (e.g., plating, photolithography, deposition, polishing, etc.). The material of the wafer may be Si, ge, siGe, SOI (Silicon On Insulator ) or GOI (Germanium On Insulator, germanium on insulator), etc. Preferably, the wafer is a saddle wafer or a bowl wafer.
In step S42, the bow distribution of the wafer 10 is obtained.
Preferably, the specific step of obtaining the curvature distribution of the wafer 10 includes:
dividing the surface of the wafer 10 into a plurality of areas according to a preset rule;
and obtaining the curvature of each region on the surface of the wafer 10, and obtaining the curvature distribution of the wafer 10.
Specifically, the surface of the wafer 10 may be divided into a plurality of areas according to a predetermined path, and the curvature of each area is measured respectively, so as to obtain the curvature distribution of the whole wafer 10. The greater the number of regions, the smaller the area of the individual regions, and the more accurate the bow distribution, thereby facilitating balancing the bow distribution of the wafer 10.
In step S43, the density distribution of the reactant on the surface of the wafer 10 is adjusted according to the curvature distribution, so as to form a film layer with non-uniform thickness distribution on the surface of the wafer 10.
Preferably, the specific step of adjusting the thickness distribution of the film deposited on the surface of the wafer 10 according to the curvature distribution includes:
judging whether the curvature corresponding to a region is larger than a preset value, if so, increasing the thickness of the film layer on the surface of the region. The specific value of the preset value can be set according to the requirement of the process.
For a region with the curvature larger than a preset value, increasing the stress applied to the region by the film layer by increasing the thickness of the film layer deposited on the surface of the region, so as to fully offset the stress of the region; and conversely, for the area with the curvature smaller than the preset value, the thickness of the film deposited on the surface of the area can be correspondingly reduced, and the stress applied to the area by the film is reduced.
Preferably, the wafer 10 is placed in a reaction chamber; the specific step of adjusting the density distribution of the reactant on the surface of the wafer according to the curvature distribution comprises the following steps:
and adjusting the density distribution of the reactant in the reaction chamber according to the curvature distribution.
Specifically, the reactants are transferred from the outside to the reaction chamber, and the density distribution of the reactants on the surface of the wafer 10 can be realized by adjusting the density distribution of the reactants in the reaction chamber, so that the adjustment of the thickness distribution of the film layer deposited on the surface of the wafer 10 is realized, and finally, the stress with different magnitudes and/or directions is applied to different areas on the surface of the wafer 10, so that the curvature distribution of the wafer 10 is balanced.
Preferably, the reaction chamber is a reaction chamber for performing a plasma chemical vapor deposition process.
In other embodiments, the reaction chamber may also be a reaction chamber that performs a plasma physical vapor deposition process.
In order to further simplify the step of balancing the wafer bow distribution, it is preferred that the specific step of adjusting the density distribution of the reactants in the reaction chamber according to the bow distribution comprises:
and adjusting the direction of the gaseous reactant entering the reaction chamber according to the curvature distribution, and controlling the density distribution of the gaseous reactant in the reaction chamber.
In order to further simplify the operation steps, more preferably, the specific step of adjusting the direction of the gaseous reactants into the reaction chamber according to the tortuosity distribution comprises:
providing a zone control gas disk having a plurality of nozzle holes through which the reactant in a gaseous state enters the reaction chamber;
and respectively controlling whether each nozzle hole is opened according to the curvature distribution so as to adjust the direction of the gaseous reactant entering the reaction chamber.
The gaseous reactant is adjusted to enter the reaction chamber, so that the density distribution of the gaseous reactant in the reaction chamber can be adjusted; moreover, since the gaseous reactants generate plasma within the reaction chamber, the density distribution of the gaseous reactants within the chamber determines the density distribution of the reactants in the plasma state within the reaction chamber, thereby controlling the thickness distribution of the film deposited on the surface of the wafer 10.
In order to further simplify the step of balancing the wafer bow distribution, it is preferred that the specific step of adjusting the density distribution of the reactants in the reaction chamber according to the bow distribution comprises:
and adjusting the direction of the reactant in the plasma state to be transmitted to the surface of the wafer according to the curvature distribution, and controlling the density distribution of the reactant in the plasma state on the surface of the wafer.
In order to further simplify the operation steps, more preferably, the specific step of adjusting the direction of transfer of the reactant in the plasma state to the wafer surface according to the curvature distribution includes:
providing a separator plate having a plurality of alignment holes through which the reactant in a plasma state is transferred to the wafer surface;
and respectively controlling whether each alignment hole is opened according to the curvature distribution so as to adjust the direction of the reactant in the plasma state to be transmitted to the surface of the wafer.
According to the method for balancing the wafer curvature distribution, the direction of the gaseous reactants entering the reaction chamber and the direction of the plasma reactants transmitted to the surface of the wafer can be adjusted simultaneously according to the curvature distribution, and only the direction of the gaseous reactants entering the reaction chamber or the direction of the plasma reactants transmitted to the surface of the wafer can be adjusted independently, so that wafers in different shapes can be flexibly adapted. When the direction of the gaseous reactant entering the reaction chamber and the direction of the plasma-state reactant being transferred to the wafer surface are simultaneously adjusted according to the curvature distribution, the transfer directions of the gaseous reactant and the plasma-state reactant are preferably the same, so as to simplify the control step.
According to the film deposition device provided by the embodiment, the film with the non-uniform thickness distribution is deposited on the surface of the wafer by controlling the density distribution of the reactant on the surface of the wafer, and the non-uniform thickness distribution stress is applied to the wafer by using the film with the non-uniform thickness distribution, so that the balance of the wafer bending distribution is finally realized, and the quality of wafer products is effectively improved; the film deposition device and the method for balancing the wafer bending degree distribution have wide application range and can balance the bending degree distribution of wafers with various shapes.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (9)
1. A film deposition apparatus, comprising:
the wafer is placed on a supporting table at the bottom of the reaction chamber;
an adjustment section including a partition surface provided toward the wafer surface and a plurality of spouts located at the partition surface for delivering a reactant to the wafer surface, the spouts being located above the support table;
the control part is used for respectively controlling whether each nozzle is opened or not so as to realize the non-uniform distribution of the density of the reactant on the surface of the wafer;
the control part is also used for obtaining the curvature distribution of the wafer and controlling whether each nozzle is opened or not according to the curvature distribution, so that the thickness of the film layer generated by the reactant is unevenly distributed on the surface of the wafer.
2. The film deposition apparatus of claim 1, wherein a plurality of said spouts are uniformly distributed throughout said dividing surface.
3. The film deposition apparatus according to claim 1, wherein the adjusting section includes a zone control gas disk; the zone control gas panel includes:
a gas chamber for containing the reactant in a gaseous state;
the separation surface comprises a first separation surface positioned on one side of the gas chamber facing the wafer.
4. The film deposition apparatus of claim 3, wherein a plurality of the spouts comprise a plurality of nozzle holes provided on the first partition surface.
5. The film deposition apparatus of claim 4, wherein the nozzle holes are regular hexagonal holes.
6. A film deposition apparatus as claimed in claim 1 or claim 3, wherein the adjustment portion comprises an alignment structure; the alignment structure includes:
the separation plate is positioned in the reaction chamber and is used for adjusting the density distribution of the reactants in a plasma state on the surface of the wafer;
the separation surface comprises a second separation surface which is arranged towards one side of the wafer in the separation plate.
7. The film deposition apparatus of claim 6, wherein a plurality of the spouts comprise a plurality of alignment holes provided on the second partition surface.
8. The film deposition apparatus of claim 1, wherein the wafer is a saddle wafer or a bowl wafer.
9. The film deposition apparatus of claim 1, wherein the film deposition apparatus is a plasma chemical vapor deposition apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811100613.7A CN109037120B (en) | 2018-09-20 | 2018-09-20 | Film deposition device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811100613.7A CN109037120B (en) | 2018-09-20 | 2018-09-20 | Film deposition device |
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| CN109037120A CN109037120A (en) | 2018-12-18 |
| CN109037120B true CN109037120B (en) | 2023-11-28 |
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| CN112439582A (en) * | 2019-08-30 | 2021-03-05 | 长鑫存储技术有限公司 | Spraying device, semiconductor processing equipment and method for spraying reactants |
| CN111933547A (en) * | 2020-07-07 | 2020-11-13 | 长江存储科技有限责任公司 | Wafer surface film layer deposition device, deposition method and semiconductor device |
| CN112164646B (en) * | 2020-09-18 | 2022-03-11 | 长江存储科技有限责任公司 | Wafer adjusting method, adjusting device, bonding control method and control device |
| CN112951763B (en) * | 2021-01-25 | 2022-03-29 | 长江存储科技有限责任公司 | Film layer growth method, device, equipment and system |
| CN113667963A (en) * | 2021-08-26 | 2021-11-19 | 长江存储科技有限责任公司 | Machine table, film forming control method, controller and system |
| CN114318303A (en) * | 2021-12-24 | 2022-04-12 | 芯盟科技有限公司 | Semiconductor processing equipment and using method thereof |
| CN116083887B (en) * | 2023-02-02 | 2024-02-06 | 上海铂世光半导体科技有限公司 | CVD vacuum reactor with pneumatic seal |
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