CN109037091A - A kind of slice battery reference plate and its scaling method - Google Patents
A kind of slice battery reference plate and its scaling method Download PDFInfo
- Publication number
- CN109037091A CN109037091A CN201810602727.5A CN201810602727A CN109037091A CN 109037091 A CN109037091 A CN 109037091A CN 201810602727 A CN201810602727 A CN 201810602727A CN 109037091 A CN109037091 A CN 109037091A
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- Prior art keywords
- cell piece
- slice
- full wafer
- piece
- reference plate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67271—Sorting devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67282—Marking devices
Abstract
The present invention discloses a kind of scaling method for being sliced battery reference plate, belong to photovoltaic art, comprising: test the short circuit current for obtaining full wafer cell piece and the short circuit current for being sliced cell piece by QE, full wafer cell piece is tested using cell piece detection board, the light intensity of regulating cell piece detection board, keep the short circuit current measured identical as the short circuit current of full wafer cell piece, using the light intensity of the detection board of cell piece at this time as the etalon optical power of test full wafer cell piece；Slice cell piece is connected to obtain false full wafer with false piece；False full wafer is identical as full wafer battery plate shape；Cell piece detection board detects slice cell piece under etalon optical power, obtains the open-circuit voltage Uoc and fill factor FF of slice cell piece.By the reference plate that the scaling method is demarcated be able to solve slice after due to without slice battery reference plate to cell piece detect board calibrate, caused by slice cell piece be unable to test and by efficiency stepping problem.The present invention also provides slice battery reference plates.
Description
Technical field
The present invention relates to photovoltaic technology field, specially a kind of slice battery reference plate and its scaling method.
Background technique
With the continuous development and progress of photovoltaic industry technology, crystal silicon component power is always in fast lifting, half and folded
The contour power crystal silicon sun component of piece is increasingly becoming the main flow direction of photovoltaic industry development.
Slice battery component design encapsulation can preferably reduce power loss, output power be improved, as well as excellent
The circuit design of change enhances the heat resistanceheat resistant spot ability of component.Crystal silicon material internal flaw is unevenly distributed and battery process difference
Property, causes the spectral response of battery each region not fully consistent so as to slice battery be different.It is raw at present
In producing line, due to there is no to be sliced battery reference plate, to can not carry out retesting stepping to slice battery, cause to exist in this way
There is phenomena such as light and shade piece under component EL (electroluminescent) detection, most in same battery strings in each slice battery of difference
The overall output power of component is influenced eventually.
Summary of the invention
Aiming at the problems existing in the prior art, the present invention provides a kind of scaling method for being sliced battery reference plate, solves
The problem of currently without slice battery reference plate.
A kind of scaling method being sliced battery reference plate, includes the following steps:
Test to obtain the absolute spectral response of full wafer cell piece by QE, by the absolute spectral response of full wafer cell piece with
AM1.5 spectrum is integrated, and the short circuit current of full wafer cell piece is obtained；
The absolute spectral response for testing to obtain slice cell piece by QE, will be sliced the absolute spectral response of cell piece with
AM1.5 spectrum is integrated, and the short circuit current of slice cell piece is obtained；
The full wafer cell piece to be tested using cell piece detection board, regulating cell piece detects the light intensity of board,
Keep the short circuit current measured identical as the short circuit current of the full wafer cell piece, using cell piece at this time detection board light intensity as
Test the etalon optical power of the full wafer cell piece；
Slice cell piece is connected with false piece, obtains false full wafer；The shape of the vacation full wafer and the full wafer cell piece
Shape is identical；
The false full wafer is put into cell piece detection board, cell piece detection board detects under the etalon optical power to be cut
Piece cell piece obtains the open-circuit voltage Uoc and fill factor FF of slice cell piece.
Preferably, in the QE test, the hot spot of measurement is equal to or more than the area of cell piece.
Preferably, before detecting slice cell piece under etalon optical power using cell piece detection board, cell piece is adjusted
The probe arrangement on board is detected, matches the arrangement of probe on cell piece detection board with the shape of full wafer battery.
Preferably, when detecting slice cell piece under etalon optical power using cell piece detection board, cell piece detection machine
The upper probe of platform is the tack probe that diameter is 1.5mm, and bottom probe is plum blossom probe.
Preferably, when that will be sliced cell piece and connect with false piece, slice cell piece and vacation piece use insulating tape to connect with
Make to be sliced between cell piece and false piece and insulate.
It preferably, will be false before the step of detecting slice cell piece under etalon optical power using cell piece detection board
The corresponding bottom probe in piece position is extracted, so that bottom probe is not contacted with false piece；It is set in the corresponding upper probe in false piece position
Insulating tape is set, so that insulating between upper probe and false piece.
Preferably, before being tested using cell piece detection board the full wafer cell piece, using Fraunhofer
Level-one standard film calibrates cell piece detection board.
Preferably, when calibrating using Fraunhofer level-one standard film to cell piece detection board, the temperature of environment is tested
Spending Tcell is 24 DEG C -26 DEG C, and the voltage of test and the difference of nominal voltage are -1~1mV.
The present invention also provides a kind of slice battery reference plates, and above-mentioned scaling method is demarcated to obtain through the invention.
Compared with prior art, the invention has the following beneficial technical effects:
The scaling method of slice battery reference plate of the invention by QE test, obtain the short circuit current of full wafer cell piece with
And the short circuit current of slice cell piece；The full wafer cell piece is tested using cell piece detection board, obtains testing whole
The etalon optical power of piece cell piece；Cell piece detection board detects slice cell piece under etalon optical power, obtains slice cell piece
Open-circuit voltage Uoc and fill factor FF, so far complete slice battery reference plate short circuit current, short-circuit voltage Uoc and filling because
Sub- FF data scaling, scaling method of the invention are solved the problems, such as currently without slice battery reference plate.
The slice battery reference plate obtained by calibrating of scaling method through the invention can be used in carrying out slice cell piece
Detection classification, it is simple to operate, it solves after being sliced due to carrying out school to cell piece monitor station machine without slice battery reference plate
Standard, caused by slice cell piece be unable to test and by efficiency stepping problem.
Detailed description of the invention
Fig. 1 is a kind of flow chart of scaling method for being sliced battery reference plate provided in an embodiment of the present invention.
Specific embodiment
Below with reference to specific embodiment, the present invention is described in further detail, it is described be explanation of the invention and
It is not to limit.
As shown in Figure 1, the step of scaling method preferred embodiment of present invention slice battery reference plate, is as follows:
Step 1, it tests to obtain the absolute spectral response of full wafer cell piece by QE, the absolute spectrum of full wafer cell piece is rung
It should be integrated with AM1.5 spectrum, obtain the short circuit current Isc of full wafer cell pieceIt is whole。
The absolute spectral response for testing to obtain slice cell piece by QE, will be sliced the absolute spectral response of cell piece with
AM1.5 spectrum is integrated, and the short circuit current Isc of slice cell piece is obtainedIt cuts。
Step 2, cell piece detection board is calibrated using Fraunhofer level-one standard film, when calibration, adjusts temperature
Compensation and room temperature, make to test 24 DEG C -26 DEG C of temperature Tcell of environment, the difference of the voltage of test and nominal voltage for -1~
1mV；
Step 3, the full wafer cell piece is tested using the cell piece detection board after step 2 calibration, adjusts electricity
Pond piece detects the light intensity of board, makes the short circuit current Isc measuredIt surveysWith the short circuit current Isc of full wafer cell pieceIt is wholeIt is identical, it will at this time
Cell piece detects the light intensity of board as the etalon optical power for testing the full wafer cell piece；
Step 4, slice cell piece is connected with false piece, obtains false full wafer；The shape of false full wafer and the shape of full wafer cell piece
Shape is identical；
Step 5, cell piece detection board detects slice cell piece under the etalon optical power that step 3 obtains, and obtains slice electricity
The open-circuit voltage Uoc and fill factor FF of pond piece.
It is sliced cell piece short circuit current IscIt cuts, the short circuit current of the slice cell piece detected, open-circuit voltage Uoc and fill out
Calibration value of the factor FF as slice cell piece to be calibrated is filled, is so far cut using the slice cell piece as slice battery reference plate
The calibration of piece battery reference plate is completed, as slice battery reference plate initial data.In use, with the slice battery reference plate of calibration
To slice battery stepping.
For the convenience of description, the short circuit current Isc that full wafer cell piece will be obtained in above-mentioned steps 1It is wholeThe step of be named as step
Rapid A；It will obtain the short circuit current Isc of slice cell pieceIt cutsThe step of be named as B.
It is understood that step A and step B can be carried out simultaneously in above-mentioned steps 1；Step can also first be carried out
A, it is rear to carry out step B；Step B can also be first carried out, it is rear to carry out step A.It will also be appreciated that the present invention for step B what
Shi Jinhang is not particularly limited, such as step B can also be placed on to any one laggard of step 2, step 3, step 4, step 5
Row.
As the preferred embodiment of the present invention: in the QE test, the hot spot of measurement is equal to or more than the area of cell piece.
As the preferred embodiment of the present invention: detecting slice cell piece under etalon optical power using cell piece detection board
Before, the probe arrangement on adjustment cell piece detection board makes the arrangement of probe and full wafer battery on cell piece detection board
Shape matching.
As the preferred embodiment of the present invention: detecting slice cell piece under etalon optical power using cell piece detection board
When, the upper probe of cell piece detection board is the tack probe that diameter is 1.5mm, and bottom probe is plum blossom probe.
As the preferred embodiment of the present invention: when that will be sliced cell piece and connect with false piece, slice cell piece is adopted with vacation piece
It is connected with insulating tape and is insulated so as to be sliced between cell piece and false piece.It in this way can be to avoid false piece to the shadow of slice cell piece
It rings.
As the preferred embodiment of the present invention: detecting slice cell piece under etalon optical power using cell piece detection board
The step of before, the corresponding bottom probe in false piece position is extracted, so that bottom probe is not contacted with vacation piece；False piece position is corresponding
Upper probe on insulating tape is set so that insulating between upper probe and false piece.It is further reduced false panel region in this way
Influence to test result further increases calibration accuracy.
As the preferred embodiment of the present invention: the cell piece detection board detects board using halm.
The above-mentioned scaling method that slice battery reference plate of the invention provides through the invention is demarcated to obtain.
It should be noted that slice battery reference plate provided by the invention is used for calibration battery built-in testing board, pass through calibration
Cell slice test board detection slice electrical performance of cell parameter afterwards, then according to slice cell piece efficiency, to slice battery
Piece carries out stepping.
The specific embodiment that the present invention is lifted is only the annotation to the invention spirit, person skilled in the art of the present invention
It can modify to the specific embodiment of description or similar method substitutes, without departing from spirit of the invention.
Claims (9)
1. a kind of scaling method for being sliced battery reference plate, which comprises the steps of:
It tests to obtain the absolute spectral response of full wafer cell piece by QE, by the absolute spectral response and AM1.5 of full wafer cell piece
Spectrum is integrated, and the short circuit current of full wafer cell piece is obtained；
It tests to obtain the absolute spectral response of slice cell piece by QE, the absolute spectral response and AM1.5 of cell piece will be sliced
Spectrum is integrated, and the short circuit current of slice cell piece is obtained；
The full wafer cell piece is tested using cell piece detection board, regulating cell piece detects the light intensity of board, makes to survey
The short circuit current obtained is identical as the short circuit current of the full wafer cell piece, using the light intensity of the detection board of cell piece at this time as test
The etalon optical power of the full wafer cell piece；
Slice cell piece is connected with false piece, obtains false full wafer；The shape of the vacation full wafer and the shape of the full wafer cell piece
It is identical；
The false full wafer is put into cell piece detection board, cell piece detection board detects slice electricity under the etalon optical power
Pond piece obtains the open-circuit voltage and fill factor of slice cell piece.
2. the scaling method of slice battery reference plate as described in claim 1, which is characterized in that in the QE test, measurement
Hot spot be equal to or more than cell piece area.
3. the scaling method of slice battery reference plate as described in claim 1, which is characterized in that using cell piece detection machine
Before platform detects slice cell piece under etalon optical power, the probe on adjustment cell piece detection board is arranged, and detects cell piece
The arrangement of probe is matched with the shape of full wafer battery on board.
4. the scaling method of slice battery reference plate as claimed in claim 3, which is characterized in that using cell piece detection machine
When platform detects slice cell piece under etalon optical power, the upper probe of cell piece detection board is that the tack that diameter is 1.5mm is visited
Needle, bottom probe are plum blossom probe.
5. the scaling method of slice battery reference plate as described in claim 1, which is characterized in that cell piece and vacation will be sliced
When piece connects, it is sliced cell piece and false piece is connected using insulating tape and insulated so as to be sliced between cell piece and false piece.
6. the scaling method of slice battery reference plate as described in claim 1, which is characterized in that using cell piece detection machine
Before platform detects the step of slice cell piece under etalon optical power, the corresponding bottom probe in false piece position is extracted, so that bottom
Probe is not contacted with false piece；Insulating tape is set in the corresponding upper probe in false piece position so that upper probe and false piece it
Between insulate.
7. the scaling method of slice battery reference plate as described in claim 1, which is characterized in that using cell piece detection machine
Before platform tests the full wafer cell piece, cell piece detection board is calibrated using Fraunhofer level-one standard film.
8. the scaling method of slice battery reference plate as claimed in claim 7, which is characterized in that use Fraunhofer level-one
When standard film calibrates cell piece detection board, the temperature Tcell for testing environment is 24 DEG C -26 DEG C, the voltage and mark of test
The difference of constant voltage is -1~1mV.
9. a kind of slice battery reference plate, which is characterized in that the slice battery reference plate passes through claim 1-8 any one
The scaling method is demarcated to obtain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810602727.5A CN109037091B (en) | 2018-06-12 | 2018-06-12 | Sliced battery reference piece and calibration method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810602727.5A CN109037091B (en) | 2018-06-12 | 2018-06-12 | Sliced battery reference piece and calibration method thereof |
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| Publication Number | Publication Date |
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| CN109037091A true CN109037091A (en) | 2018-12-18 |
| CN109037091B CN109037091B (en) | 2021-06-15 |
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| CN201810602727.5A Active CN109037091B (en) | 2018-06-12 | 2018-06-12 | Sliced battery reference piece and calibration method thereof |
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| CN109714001A (en) * | 2018-12-27 | 2019-05-03 | 苏州阿特斯阳光电力科技有限公司 | A kind of detection method of solar battery cutting damage |
| CN112289698A (en) * | 2020-10-28 | 2021-01-29 | 天合光能股份有限公司 | Calibration method of sliced battery standard slice |
| CN114843369A (en) * | 2022-04-28 | 2022-08-02 | 晶科能源(海宁)有限公司 | Monitoring method of solar cell preparation process |
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| CN114843369A (en) * | 2022-04-28 | 2022-08-02 | 晶科能源(海宁)有限公司 | Monitoring method of solar cell preparation process |
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| CN109037091B (en) | 2021-06-15 |
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