CN109037064A - A kind of black phosphorus alkene waveform thin film transistor (TFT) and preparation method for flexible display - Google Patents
A kind of black phosphorus alkene waveform thin film transistor (TFT) and preparation method for flexible display Download PDFInfo
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- CN109037064A CN109037064A CN201810848820.4A CN201810848820A CN109037064A CN 109037064 A CN109037064 A CN 109037064A CN 201810848820 A CN201810848820 A CN 201810848820A CN 109037064 A CN109037064 A CN 109037064A
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- -1 black phosphorus alkene Chemical class 0.000 title claims abstract description 106
- 239000010409 thin film Substances 0.000 title claims abstract description 66
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 239000010408 film Substances 0.000 claims abstract description 50
- 239000004642 Polyimide Substances 0.000 claims abstract description 44
- 229920001721 polyimide Polymers 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 14
- 230000005669 field effect Effects 0.000 claims abstract description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 16
- 230000009466 transformation Effects 0.000 claims description 16
- 229910052582 BN Inorganic materials 0.000 claims description 9
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 9
- 239000005062 Polybutadiene Substances 0.000 claims description 8
- 230000009471 action Effects 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 8
- 229920002857 polybutadiene Polymers 0.000 claims description 8
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 8
- 238000011084 recovery Methods 0.000 claims description 8
- 238000001771 vacuum deposition Methods 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052796 boron Inorganic materials 0.000 abstract description 3
- 239000011241 protective layer Substances 0.000 abstract description 3
- 230000008020 evaporation Effects 0.000 abstract description 2
- 238000001704 evaporation Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 44
- 239000000463 material Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 8
- 238000010998 test method Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention belongs to the technical fields of flexible electronic displays, provide a kind of black phosphorus alkene waveform thin film transistor (TFT) and preparation method for flexible display.Then this method deposits black phosphorus alkene nano thin-film in substrate surface by applying pretension to flexible polyimide substrate, and form nitridation boron protective layer; slow release pretension again; black phosphorus alkene film is set to form waveform, black phosphorus alkene waveform field-effect thin film transistor (TFT) is made in further electrode evaporation.It is compared with the traditional method, waveform thin film transistor (TFT) prepared by the present invention, not only there is good flexibility, critical stretching strain and critical compressive strain are higher, and it is with good stability, carrier mobility and current switch are higher, can be used in flexible electronic displays.
Description
Technical field
The invention belongs to the technical fields of flexible electronic displays, provide a kind of black phosphorus alkene wave for flexible display
Shape thin film transistor (TFT) and preparation method.
Background technique
In recent years, two dimensional crystal material becomes the new direction of semiconductor material research because of its superior electrical characteristic.After stone
After black alkene, molybdenum disulfide, recently, a kind of New Two Dimensional semiconductor material-black phosphorus, and the corresponding field-effect of preparation are brilliant
Body tube device, it would be possible to substitute traditional silicon, become the basic material of electronic circuit.Black phosphorus two dimensional crystal has good electricity
Transport factor, there are also very high leakage current modulation rates, similar with the traditional material silicon of electronic circuit.In addition to superior electrical property with
Outside, the optical property of black phosphorus also has big advantage compared with the other materials including silicon and molybdenum sulfide.
The great advantage that black phosphorus surmounts graphene, which is that, possesses energy gap, makes it easier to carry out optical detection.Moreover, its energy
Gap is can be adjusted by the black phosphorus number of plies stacked on a silicon substrate, can absorb visible-range and communicate with infrared
The wavelength of line range.In addition, also electronic signal can be changed into light because black phosphorus is a kind of direct gap semiconductor, be a kind of property
Semiconductor material that can be extremely excellent.
One important directions of black phosphorus development are to prepare transistor, and long term object is then the realization black phosphorus thunder in silicon wafer
The manufacturing process of component flexible electronic device with its unique ductility and its efficiently, inexpensive is penetrated, there is wide application prospect.
Compared with other two dimensional crystal materials, two-dimentional black phosphorus monocrystal material is more stable, but its monocrystalline is not easy to grow under normal pressure,
There is fabulous application prospect, but the disadvantage of its flexible difference limits the application in flexible display in the application of display.
Chinese invention patent application number 201710344614.5 discloses a kind of flexible thin-film transistor and its manufacturing method,
It include: flexible substrates；Inorganic insulation layer on a flexible substrate is set；And the film crystal on inorganic insulation layer is set
Pipe；Wherein, the surface of inorganic insulation layer towards thin film transistor (TFT) side is provided with coarse structure.But it is undesirable to there is flexibility, easily
The problem of cracking.
Chinese invention patent application number 201410276830.7 discloses a kind of flexible thin-film transistor, comprising: flexible base
Plate；Barrier layer is set on the flexible base board；Grid is set on the barrier layer；Gate insulating layer is set to
On barrier layer and cover the grid；Active semiconductor layer is set on the gate insulating layer；And source/drain electrode,
Be set on the active semiconductor layer and with the active semiconductor layer be in electrical contact, wherein barrier layer be include silicon nitride
The stepped construction of layer, silicon oxide layer and alumina layer.But there is flexible poor, easy to crack, the disadvantage of useful life longevity difference.
In conclusion since material of the flexible display for transistor is more demanding, and existing black phosphorus crystal tubing
Material is flexible poor, and easy fracture, useful life longevity is undesirable, has seriously affected application and Flexible Displays of the black phosphorus in flexible display
The development of device, therefore black phosphorus alkene waveform thin film transistor (TFT) of the exploitation for flexible display has great significance.
Summary of the invention
As it can be seen that the thin film transistor (TFT) of prior art preparation has the shortcomings that poor flexibility, easy fracture, flexible display is affected
Service life.In response to this, it is proposed that a kind of black phosphorus alkene waveform thin film transistor (TFT) and system for flexible display
Preparation Method, it is flexible while so that transistor has excellent electric property, it is not easy to break, have preferably using durable
Property.
To achieve the above object, specific technical solution of the present invention is as follows:
A kind of preparation method of the black phosphorus alkene waveform thin film transistor (TFT) for flexible display, the waveform thin film transistor (TFT) preparation
Specific step is as follows:
(1) apply pretension to flexible polyimide substrate, so that substrate is in tensional state, then at reduced pressure conditions by red phosphorus
Heating deposition is in polyimide-based plate surface, and after cooling, pressurization makes red phosphorus be converted into black phosphorus alkene by phase transformation at normal temperature, is made
Black phosphorus alkene nano thin-film；
(2) it is shifted by dry method, using polybutadiene and polymethyl methacrylate as polymeric support layer, under the action of nitrogen pressure
Black phosphorus alkene nano thin-film is heated to certain temperature, boron nitride is transferred to the surface of black phosphorus alkene film layer, forms passivation protection
Layer；
(3) pretension of slow release polyimide substrate, during the deformation of substrate slowly restores, black phosphorus alkene film layer
Deformation occurs therewith, forms wavy film, i.e. black phosphorus alkene waveform film；
(4) Cr/Au electrode is deposited in the channel two sides of black phosphorus alkene by vacuum coating equipment, black phosphorus alkene waveform field-effect film is made
Transistor.
Preferably, step (1) described polyimide substrate with a thickness of 0.5 ~ 1.5mm, pre-draw ratio is 0.5 ~ 2 times.
Preferably, the temperature of step (1) described heating deposition is 200 ~ 300 DEG C, and decompressed pressure is 0.05 ~ 0.2Pa.
Preferably, the pressure of step (1) described phase transformation is 7 ~ 10GPa.
Preferably, black phosphorus alkene nano thin-film made from step (1) with a thickness of 5 ~ 15nm.
Preferably, the heating temperature of step (2) the black phosphorus alkene nano thin-film is 110 ~ 140 DEG C.
Preferably, the deformation recovery time of step (3) described polyimide substrate is 5 ~ 30s.
The present invention also provides a kind of black phosphorus alkene waves for flexible display that a kind of above-mentioned preparation method is prepared
Shape thin film transistor (TFT).The waveform thin film transistor (TFT) is by applying pretension to flexible polyimide substrate, then in substrate
Surface deposits black phosphorus alkene nano thin-film, and forms nitridation boron protective layer, then slow release pretension, and black phosphorus alkene film is made to form wave
Shape, further electrode evaporation and be made.
It is and existing the present invention provides a kind of black phosphorus alkene waveform thin film transistor (TFT) and preparation method for flexible display
Technology is compared, and the feature and excellent effect protruded is:
1. black phosphorus alkene waveform thin film transistor (TFT) prepared by the present invention, by applying pretension to flexible polyimide substrate, in base
During the tensile deformation of plate is replied, driving black phosphorus alkene film, deformation occurs and is bent, and waveform film is formed, so that obtained
Transistor has certain flexibility, is able to cooperate the deformation of flexible display and not broken.
2. preparation method of the invention shifts to form nitridation boron protective layer, can restrain black in black phosphorus alkene film surface dry method
The surface oxidation of phosphorus alkene, with good stability, the carrier mobility of transistor obtained dramatically increases, and can maintain compared with
High current on/off ratio.
Specific embodiment
In the following, the present invention will be further described in detail by way of specific embodiments, but this should not be interpreted as to the present invention
Range be only limitted to example below.Without departing from the idea of the above method of the present invention, according to ordinary skill
The various replacements or change that knowledge and customary means are made, should be included in the scope of the present invention.
Embodiment 1
(1) apply pretension to flexible polyimide substrate, so that substrate is in tensional state, then at reduced pressure conditions by red phosphorus
Heating deposition is in polyimide-based plate surface, and after cooling, pressurization makes red phosphorus be converted into black phosphorus alkene by phase transformation at normal temperature, is made
Black phosphorus alkene nano thin-film；Polyimide substrate with a thickness of 0.9mm, pre-draw ratio is 0.9 times；The temperature of heating deposition is
260 DEG C, decompressed pressure 0.11Pa；The pressure of phase transformation is 9GPa；Black phosphorus alkene nano thin-film with a thickness of 9nm；
(2) it is shifted by dry method, using polybutadiene and polymethyl methacrylate as polymeric support layer, under the action of nitrogen pressure
Black phosphorus alkene nano thin-film is heated to certain temperature, boron nitride is transferred to the surface of black phosphorus alkene film layer, forms passivation protection
Layer；The heating temperature of black phosphorus alkene nano thin-film is 130 DEG C；
(3) pretension of slow release polyimide substrate, during the deformation of substrate slowly restores, black phosphorus alkene film layer
Deformation occurs therewith, forms wavy film, i.e. black phosphorus alkene waveform film；The deformation recovery time of polyimide substrate is
22s；
(4) Cr/Au electrode is deposited in the channel two sides of black phosphorus alkene by vacuum coating equipment, black phosphorus alkene waveform field-effect film is made
Transistor.
Test method:
(1) carrier mobility: carrying out the measurement of carrier mobility using flight time (TOF) method, is tested using traditional TOF
Device is tested under light pulse excitation, and test environment temperature is 25 DEG C, and relative humidity 55% does photoelectric current and time
At logarithm (i.e. logI-logt curve), the turning point t that photoelectric current has a deformation is obtainedtr, according to formula L=d/ttrE is calculated
Carrier mobility, wherein d is the film thickness of transistor device produced by the present invention；
(2) current on/off ratio: the electricity for carrying out thin film transistor (TFT) produced by the present invention referring to 2015 standard of IEC61000-4-5 is special
Property test, test equipment be HP4156B Semiconductor Parameter Analyzer, test environment temperature be 25 DEG C, relative humidity 55% obtains
To the switching characteristic and transconductance curve of thin film transistor (TFT), according to the ratio I of on-state current and off-state currenton/IoffElectricity is calculated
Flow on-off ratio；
(3) critical stretching strain and compressive strain: range is used to measure thin film transistor (TFT) produced by the present invention for micro- puller system of 250N
Stress σ-strain stress curve, using the opposite variation of resistance test measuring apparatus metal thin film resistor in stretching and compression process
The variation of strain stress, Δ=(R-R0)/R0, wherein R0For the resistance value for stretching or compressing preceding metallic film, R is stretching or compressed
The resistance value of metallic film in journey；Obtain εiAnd εc, metal foil in stretching and compression process is observed continuously by flying-spot microscope
The micro-crack percentage of film changes, and draws micro-crack percentage f with the change curve of strain stress, and then directly obtain critical drawing and answer
Become and critical compressive strain；
The data obtained is as shown in table 1.
Embodiment 2
(1) apply pretension to flexible polyimide substrate, so that substrate is in tensional state, then at reduced pressure conditions by red phosphorus
Heating deposition is in polyimide-based plate surface, and after cooling, pressurization makes red phosphorus be converted into black phosphorus alkene by phase transformation at normal temperature, is made
Black phosphorus alkene nano thin-film；Polyimide substrate with a thickness of 0.7mm, pre-draw ratio is 0.7 times；The temperature of heating deposition is
230 DEG C, decompressed pressure 0.08Pa；The pressure of phase transformation is 8Gpa；Black phosphorus alkene nano thin-film with a thickness of 8nm；
(2) it is shifted by dry method, using polybutadiene and polymethyl methacrylate as polymeric support layer, under the action of nitrogen pressure
Black phosphorus alkene nano thin-film is heated to certain temperature, boron nitride is transferred to the surface of black phosphorus alkene film layer, forms passivation protection
Layer；The heating temperature of black phosphorus alkene nano thin-film is 115 DEG C；
(3) pretension of slow release polyimide substrate, during the deformation of substrate slowly restores, black phosphorus alkene film layer
Deformation occurs therewith, forms wavy film, i.e. black phosphorus alkene waveform film；The deformation recovery time of polyimide substrate is
12s；
(4) Cr/Au electrode is deposited in the channel two sides of black phosphorus alkene by vacuum coating equipment, black phosphorus alkene waveform field-effect film is made
Transistor.
Test method and embodiment 1 are consistent, and the data obtained is as shown in table 1.
Embodiment 3
(1) apply pretension to flexible polyimide substrate, so that substrate is in tensional state, then at reduced pressure conditions by red phosphorus
Heating deposition is in polyimide-based plate surface, and after cooling, pressurization makes red phosphorus be converted into black phosphorus alkene by phase transformation at normal temperature, is made
Black phosphorus alkene nano thin-film；Polyimide substrate with a thickness of 1.3mm, pre-draw ratio is 1.7 times；The temperature of heating deposition is
280 DEG C, decompressed pressure 0.16Pa；The pressure of phase transformation is 9GPa；Black phosphorus alkene nano thin-film with a thickness of 12nm；
(2) it is shifted by dry method, using polybutadiene and polymethyl methacrylate as polymeric support layer, under the action of nitrogen pressure
Black phosphorus alkene nano thin-film is heated to certain temperature, boron nitride is transferred to the surface of black phosphorus alkene film layer, forms passivation protection
Layer；The heating temperature of black phosphorus alkene nano thin-film is 130 DEG C；
(3) pretension of slow release polyimide substrate, during the deformation of substrate slowly restores, black phosphorus alkene film layer
Deformation occurs therewith, forms wavy film, i.e. black phosphorus alkene waveform film；The deformation recovery time of polyimide substrate is
24s；
(4) Cr/Au electrode is deposited in the channel two sides of black phosphorus alkene by vacuum coating equipment, black phosphorus alkene waveform field-effect film is made
Transistor.
Test method and embodiment 1 are consistent, and the data obtained is as shown in table 1.
Embodiment 4
(1) apply pretension to flexible polyimide substrate, so that substrate is in tensional state, then at reduced pressure conditions by red phosphorus
Heating deposition is in polyimide-based plate surface, and after cooling, pressurization makes red phosphorus be converted into black phosphorus alkene by phase transformation at normal temperature, is made
Black phosphorus alkene nano thin-film；Polyimide substrate with a thickness of 0.7mm, pre-draw ratio is 1.2 times；The temperature of heating deposition is
220 DEG C, decompressed pressure 0.1Pa；The pressure of phase transformation is 8GPa；Black phosphorus alkene nano thin-film with a thickness of 10nm；
(2) it is shifted by dry method, using polybutadiene and polymethyl methacrylate as polymeric support layer, under the action of nitrogen pressure
Black phosphorus alkene nano thin-film is heated to certain temperature, boron nitride is transferred to the surface of black phosphorus alkene film layer, forms passivation protection
Layer；The heating temperature of black phosphorus alkene nano thin-film is 120 DEG C；
(3) pretension of slow release polyimide substrate, during the deformation of substrate slowly restores, black phosphorus alkene film layer
Deformation occurs therewith, forms wavy film, i.e. black phosphorus alkene waveform film；The deformation recovery time of polyimide substrate is
15s；
(4) Cr/Au electrode is deposited in the channel two sides of black phosphorus alkene by vacuum coating equipment, black phosphorus alkene waveform field-effect film is made
Transistor.
Test method and embodiment 1 are consistent, and the data obtained is as shown in table 1.
Embodiment 5
(1) apply pretension to flexible polyimide substrate, so that substrate is in tensional state, then at reduced pressure conditions by red phosphorus
Heating deposition is in polyimide-based plate surface, and after cooling, pressurization makes red phosphorus be converted into black phosphorus alkene by phase transformation at normal temperature, is made
Black phosphorus alkene nano thin-film；Polyimide substrate with a thickness of 1.2mm, pre-draw ratio is 1.5 times；The temperature of heating deposition is
280 DEG C, decompressed pressure 0.14Pa；The pressure of phase transformation is 9GPa；Black phosphorus alkene nano thin-film with a thickness of 13nm；
(2) it is shifted by dry method, using polybutadiene and polymethyl methacrylate as polymeric support layer, under the action of nitrogen pressure
Black phosphorus alkene nano thin-film is heated to certain temperature, boron nitride is transferred to the surface of black phosphorus alkene film layer, forms passivation protection
Layer；The heating temperature of black phosphorus alkene nano thin-film is 130 DEG C；
(3) pretension of slow release polyimide substrate, during the deformation of substrate slowly restores, black phosphorus alkene film layer
Deformation occurs therewith, forms wavy film, i.e. black phosphorus alkene waveform film；The deformation recovery time of polyimide substrate is
22s；
(4) Cr/Au electrode is deposited in the channel two sides of black phosphorus alkene by vacuum coating equipment, black phosphorus alkene waveform field-effect film is made
Transistor.
Test method and embodiment 1 are consistent, and the data obtained is as shown in table 1.
Embodiment 6
(1) apply pretension to flexible polyimide substrate, so that substrate is in tensional state, then at reduced pressure conditions by red phosphorus
Heating deposition is in polyimide-based plate surface, and after cooling, pressurization makes red phosphorus be converted into black phosphorus alkene by phase transformation at normal temperature, is made
Black phosphorus alkene nano thin-film；Polyimide substrate with a thickness of 1mm, pre-draw ratio is 1.4 times；The temperature of heating deposition is 250
DEG C, decompressed pressure 1.2Pa；The pressure of phase transformation is 8GPa；Black phosphorus alkene nano thin-film with a thickness of 11nm；
(2) it is shifted by dry method, using polybutadiene and polymethyl methacrylate as polymeric support layer, under the action of nitrogen pressure
Black phosphorus alkene nano thin-film is heated to certain temperature, boron nitride is transferred to the surface of black phosphorus alkene film layer, forms passivation protection
Layer；The heating temperature of black phosphorus alkene nano thin-film is 125 DEG C；
(3) pretension of slow release polyimide substrate, during the deformation of substrate slowly restores, black phosphorus alkene film layer
Deformation occurs therewith, forms wavy film, i.e. black phosphorus alkene waveform film；The deformation recovery time of polyimide substrate is
18s；
(4) Cr/Au electrode is deposited in the channel two sides of black phosphorus alkene by vacuum coating equipment, black phosphorus alkene waveform field-effect film is made
Transistor.
Test method and embodiment 1 are consistent, and the data obtained is as shown in table 1.
Comparative example 1
In preparation process, pretension is not applied to flexible polyimide substrate, thin film transistor (TFT) obtained is planar shaped, other systems
Standby condition and embodiment 6 are consistent.
Test method and embodiment 1 are consistent, and the data obtained is as shown in table 1.
Comparative example 2
In preparation process, not formed boron nitride passivation protection layer, other preparation conditions and embodiment 6 are consistent.
Test method and embodiment 1 are consistent, and the data obtained is as shown in table 1.
Table 1:
Claims (8)
1. a kind of preparation method of the black phosphorus alkene waveform thin film transistor (TFT) for flexible display, which is characterized in that the waveform
Specific step is as follows for thin film transistor (TFT) preparation:
(1) apply pretension to flexible polyimide substrate, so that substrate is in tensional state, then at reduced pressure conditions by red phosphorus
Heating deposition is in polyimide-based plate surface, and after cooling, pressurization makes red phosphorus be converted into black phosphorus alkene by phase transformation at normal temperature, is made
Black phosphorus alkene nano thin-film；
(2) it is shifted by dry method, using polybutadiene and polymethyl methacrylate as polymeric support layer, under the action of nitrogen pressure
Black phosphorus alkene nano thin-film is heated to certain temperature, boron nitride is transferred to the surface of black phosphorus alkene film layer, forms passivation protection
Layer；
(3) pretension of slow release polyimide substrate, during the deformation of substrate slowly restores, black phosphorus alkene film layer
Deformation occurs therewith, forms wavy film, i.e. black phosphorus alkene waveform film；
(4) Cr/Au electrode is deposited in the channel two sides of black phosphorus alkene by vacuum coating equipment, black phosphorus alkene waveform field-effect film is made
Transistor.
2. a kind of preparation method of the black phosphorus alkene waveform thin film transistor (TFT) for flexible display according to claim 1,
Be characterized in that: step (1) described polyimide substrate with a thickness of 0.5 ~ 1.5mm, pre-draw ratio is 0.5 ~ 2 times.
3. a kind of preparation method of the black phosphorus alkene waveform thin film transistor (TFT) for flexible display according to claim 1,
Be characterized in that: the temperature of step (1) described heating deposition is 200 ~ 300 DEG C, and decompressed pressure is 0.05 ~ 0.2Pa.
4. a kind of preparation method of the black phosphorus alkene waveform thin film transistor (TFT) for flexible display according to claim 1,
Be characterized in that: the pressure of step (1) described phase transformation is 7 ~ 10GPa.
5. a kind of preparation method of the black phosphorus alkene waveform thin film transistor (TFT) for flexible display according to claim 1,
It is characterized in that: black phosphorus alkene nano thin-film with a thickness of 5 ~ 15nm made from step (1).
6. a kind of preparation method of the black phosphorus alkene waveform thin film transistor (TFT) for flexible display according to claim 1,
Be characterized in that: the heating temperature of step (2) the black phosphorus alkene nano thin-film is 110 ~ 140 DEG C.
7. a kind of preparation method of the black phosphorus alkene waveform thin film transistor (TFT) for flexible display according to claim 1,
Be characterized in that: the deformation recovery time of step (3) described polyimide substrate is 5 ~ 30s.
8. a kind of black phosphorus alkene waveform for flexible display that any one of claim 1 ~ 7 preparation method is prepared is thin
Film transistor.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810848820.4A CN109037064A (en) | 2018-07-28 | 2018-07-28 | A kind of black phosphorus alkene waveform thin film transistor (TFT) and preparation method for flexible display |
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| CN201810848820.4A CN109037064A (en) | 2018-07-28 | 2018-07-28 | A kind of black phosphorus alkene waveform thin film transistor (TFT) and preparation method for flexible display |
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| CN111785164A (en) * | 2020-06-04 | 2020-10-16 | 华中科技大学 | Stretchable reflection type phase change display device and preparation method thereof |
| CN113471328A (en) * | 2021-07-02 | 2021-10-01 | 中国科学院物理研究所 | Transistor device with stretchable field effect and preparation method and product thereof |
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| CN113471328B (en) * | 2021-07-02 | 2023-10-31 | 中国科学院物理研究所 | Transistor device with stretchable field effect, and preparation method and product thereof |
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