CN109037058A - A kind of manufacturing method of MPS diode - Google Patents
A kind of manufacturing method of MPS diode Download PDFInfo
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- CN109037058A CN109037058A CN201810872296.4A CN201810872296A CN109037058A CN 109037058 A CN109037058 A CN 109037058A CN 201810872296 A CN201810872296 A CN 201810872296A CN 109037058 A CN109037058 A CN 109037058A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 150000002500 ions Chemical class 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 238000005530 etching Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 230000008569 process Effects 0.000 claims abstract description 14
- 238000000137 annealing Methods 0.000 claims abstract description 10
- 230000003647 oxidation Effects 0.000 claims abstract description 10
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 10
- 238000002203 pretreatment Methods 0.000 claims abstract description 10
- 238000002360 preparation method Methods 0.000 claims abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 21
- 238000005468 ion implantation Methods 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- 230000001413 cellular effect Effects 0.000 claims description 4
- 230000000717 retained effect Effects 0.000 claims 1
- 230000005611 electricity Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention relates to semiconductor chip fabrication process technical fields, and in particular to a kind of manufacturing method of MPS diode.A kind of manufacturing method of MPS diode, the manufacturing method of the MPS diode is the following steps are included: provide the substrate for having front and back；The first Doped ions are injected in preset ion implanted region on substrate, form the first ion implanted region and the second ion implanted region；It is settled out dielectric layer；Etching removes dielectric layer, removes photoresist after etching；Short annealing oxidation forms oxide layer on the second exposed ion implanted region surface and substrate schottky region front；Pre-treatment is carried out to the oxide layer, gets rid of the oxide layer, the second ion implanted region surface of exposure and substrate schottky region front；The surface preparation in the front and the second ion implanted region of substrate schottky region prepares metal layer.The manufacturing method of the MPS diode can be avoided because surface state difference causes schottky junction to leak electricity big problem, promote the FRD electric property and reliability of MPS diode.
Description
Technical field
The present invention relates to semiconductor chip fabrication process technical fields, and in particular to a kind of MPS(mixing PIN and Schottky)
The manufacturing method of diode.
Background technique
MPS(Merged P-i-N/Schottky) diode is known as PIN and Schottky compound diode.It is a kind of
The new device that the function of PIN diode and Schottky diode is combined.Mainstream machining processes are as follows: photoetching injection, it is high
Temperature promotes and forms anode p type island region domain；N+ cut-off ring is made in photoetching injection；ILD dielectric layer deposition；Chemical wet etching contact hole；Then
Front metal technique forms P-i-N anode staggered with schottky.
The naked silicon of schottky area passes through ILD dielectric layer deposition to existing MPS diode in the fabrication process, and hole etching is gone
Glue etc. has high temperature, and plasma bombardment process will cause silicon face damage, since schottky junction is very sensitive to this damage,
Cause the electric leakage of MPS diode finished product high, the problems such as poor reliability.
Summary of the invention
In order to solve the deficiencies in the prior art, the present invention provides a kind of manufacturing method of MPS diode, described
The manufacturing method of MPS diode can be avoided because surface state difference causes schottky junction to leak electricity big problem, promote MPS diode
FRD electric property and reliability.
The technical solution provided according to the present invention, a kind of manufacturing method of MPS diode, the manufacture of the MPS diode
Method the following steps are included:
S110: the substrate for having front and back is provided；
S210: injecting the first Doped ions on substrate in preset ion implanted region, the first ion implanted region is formed, first
It is injected on ion implanted region using the second Doped ions, forms the second ion implanted region on the first ion implanted region；
S310: dielectric layer is settled out on the surface and substrate schottky region of the second ion implanted region；
S410: being performed etching removal dielectric layer, removed photoresist after etching using wet process, the second ion implanted region surface of exposure and substrate Xiao
Special base area front；
S510: short annealing oxidation forms oxidation on exposed the second ion implanted region surface and substrate schottky region front
Layer；
S610: carrying out pre-treatment to the oxide layer, gets rid of the oxide layer, the second ion implanted region surface of exposure and substrate
Schottky region front；
S710: the surface preparation in the front and the second ion implanted region of the substrate schottky region prepares metal layer, thus institute
The contact surface for stating substrate schottky region and the metal layer forms Schottky contacts, in second ion implanted region and the gold
The contact surface for belonging to layer forms Ohmic contact.
Further, in the S110: the step of N-type FZ substrate step that offer has front and back carries out later:
S111: in the front growth field oxygen layer of the substrate；
S112: ion implantation window is formed using chemical wet etching field ring and cellular in preset ion implanted region, reservation will be described
The field oxygen layer of the substrate schottky region at ion implantation window interval；
The step S310 is specifically included: being precipitated on the surface of the second ion implanted region and the field oxygen layer surface of substrate schottky region
Dielectric layer out；
The step S410 is specifically included: being performed etching removal and is located at the second ion implanted region surface and substrate schottky region oxygen
The dielectric layer of layer surface and field oxygen layer positioned at substrate schottky region are removed photoresist using wet process after etching, exposure the second ion note
Enter area surface and substrate schottky region front；
Further, short annealing described in step S510 oxidation carried out in 800 ~ 1000 DEG C, short annealing oxidation when
Between be 8 ~ 10 seconds, formed with a thickness of the oxide layer within 5nm.
Further, the substrate uses N-type FZ type.
Further, step S610 specifically: pre-treatment is carried out to the oxide layer with HF acid, gets rid of the oxidation
Layer, the second ion implanted region surface of exposure and substrate schottky region front.
From the manufacturing method described above that can be seen that MPS diode provided by the invention, have compared with prior art
Following advantages: after the present invention etches in hole, being removed photoresist using pure wet process, and repairs silicon face using RTO, and by containing HF acid
Pre-treatment promotes MPS structure FRD electric property and reliability to avoid causing schottky junction electric leakage big because of surface state difference.
Detailed description of the invention
Fig. 1 to Fig. 7 is second of embodiment manufacturing process sectional view of the invention.
Fig. 8 is the process of present invention production MPS diode.
1. substrate, 2. first ion implanted regions, 3. second ion implanted regions, 4. schottky regions, 5. dielectric layers, 6. oxidations
Layer, 7. metal layers, 8. oxygen layer, 9. injection windows.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in more detail.
The first embodiment: a kind of manufacturing method of MPS diode, as shown in figure 8, the manufacturer of the MPS diode
Method specifically includes:
S110: the N-type FZ substrate 1 for having front and back is provided；
S210: injecting the first Doped ions on substrate 1 in preset ion implanted region, forms the first ion implanted region 2, high temperature
It promotes, is injected on the first ion implanted region 2 using the second Doped ions, form second on the first ion implanted region 2
Ion implanted region 3；
S310: dielectric layer 5 is settled out on 1 schottky region 4 of surface and substrate of the second ion implanted region 3；
S410: being performed etching removal dielectric layer 5, removed photoresist after etching using wet process, exposure 3 surface of the second ion implanted region and substrate
1 schottky region, 4 front；
S510:800 DEG C of short annealing aoxidizes 10 seconds, exposed 3 surface of the second ion implanted region and 1 schottky region 4 of substrate just
It is formed on face with a thickness of 4nm oxide layer 6；
S610: carrying out pre-treatment to the oxide layer 6 with HF acid, gets rid of the oxide layer 6, the second ion implanted region 3 of exposure
4 front of surface and 1 schottky region of substrate；
S710: the surface preparation in the front and the second ion implanted region 3 of 1 schottky region 4 of substrate prepares metal layer 7, from
And 1 schottky region 4 of substrate and the contact surface of the metal layer 7 form Schottky contacts, in second ion implanted region 3
Ohmic contact is formed with the contact surface of the metal layer 7.
It can be understood that the present embodiment is removed photoresist using pure wet process compared with etching injury silicon face in the prior art, and benefit
Silicon face can be repaired with short annealing, and by the pre-treatment containing HF acid, to avoid leading to Schottky because of surface state difference
Junction leakage TV university promotes MPS structure FRD electric property and reliability.
Second of embodiment: a kind of manufacturing method of MPS diode, the manufacturing method of the MPS diode specifically include:
S110: the N-type FZ substrate 1 for having front and back is provided.
S111: referring to Fig.1, in the front growth field oxygen layer 8 of the substrate 1；
S112: referring to Fig. 2, ion implantation window 9 is formed using chemical wet etching field ring and cellular in preset ion implanted region, is protected
Stay the field oxygen layer 8 for 1 schottky region 4 of substrate for being spaced the ion implantation window 9；
S210: referring to Fig. 3, the first Doped ions are injected in the ion implantation window 9 on substrate 1, form the first ion implanting
Area 2 is injected on the first ion implanted region 2 using the second Doped ions, on the first ion implanted region 2 formed second from
Sub- injection region 3；
S310: referring to Fig. 4, Jie is settled out on 8 surface of field oxygen layer of 1 schottky region 4 of surface and substrate of the second ion implanted region 3
Matter layer 5；
S410: it referring to Fig. 5, performs etching removal and is located at 3 surface of the second ion implanted region and 1 schottky region of substrate 4,8 table of oxygen layer
The dielectric layer 5 in face and field oxygen layer 8 positioned at 1 schottky region 4 of substrate are removed photoresist using wet process after etching, exposure the second ion note
Enter 4 front of 3 surface of area and 1 schottky region of substrate；
S510: referring to Fig. 6,1000 DEG C of short annealings are aoxidized 8 seconds, in exposed 1 Xiao of 3 surface of the second ion implanted region and substrate
It is formed on special 4 front of base area with a thickness of 5nm oxide layer 6；
S610: referring to Fig. 7, carrying out pre-treatment to the oxide layer 6 with HF acid, gets rid of the oxide layer 6, the second ion of exposure
4 front of 3 surface of injection region and 1 schottky region of substrate；
S710: the surface preparation in the front and the second ion implanted region 3 of 1 schottky region 4 of substrate prepares metal layer 7, from
And 1 schottky region 4 of substrate and the contact surface of the metal layer 7 form Schottky contacts, in second ion implanted region 3
Ohmic contact is formed with the contact surface of the metal layer 7.
The third embodiment: a kind of manufacturing method of MPS diode, the manufacturing method of the MPS diode is specifically wrapped
It includes:
S110: the N-type FZ substrate 1 for having front and back is provided.
S111: in the front growth field oxygen layer 8 of the substrate 1；
S112: ion implantation window 9 is formed using chemical wet etching field ring and cellular in preset ion implanted region, reservation will be described
The field oxygen layer 8 for 1 schottky region 4 of substrate that ion implantation window 9 is spaced；
S210: injecting the first Doped ions in the ion implantation window 9 on substrate 1, forms the first ion implanted region 2, the
It is injected on one ion implanted region 2 using the second Doped ions, forms the second ion implanted region on the first ion implanted region 2
3；
S310: dielectric layer 5 is settled out on 8 surface of field oxygen layer of 1 schottky region 4 of surface and substrate of the second ion implanted region 3；
S410: the medium that removal is located at 48 surfaces of oxygen layer in 3 surface of the second ion implanted region and 1 schottky region of substrate is performed etching
Layer 5 and the field oxygen layer 8 positioned at 1 schottky region 4 of substrate is removed photoresist using wet process after etching, exposure 3 surface of the second ion implanted region
With 1 schottky region of substrate, 4 front；
S510:900 DEG C of short annealing aoxidizes 9 seconds, exposed 3 surface of the second ion implanted region and 1 schottky region 4 of substrate just
It is formed on face with a thickness of 3nm oxide layer 6；
S610: carrying out pre-treatment to the oxide layer 6 with HF acid, gets rid of the oxide layer 6, the second ion implanted region 3 of exposure
4 front of surface and 1 schottky region of substrate；
S710: the surface preparation in the front and the second ion implanted region 3 of 1 schottky region 4 of substrate prepares metal layer 7, from
And 1 schottky region 4 of substrate and the contact surface of the metal layer 7 form Schottky contacts, in second ion implanted region 3
Ohmic contact is formed with the contact surface of the metal layer 7.
It should be understood by those ordinary skilled in the art that: the above is only a specific embodiment of the present invention, and
It is not used in the limitation present invention, all any modification, equivalent substitution, improvement and etc. within purport of the invention, done should all include
Within protection scope of the present invention.
Claims (5)
1. a kind of manufacturing method of MPS diode, which is characterized in that the manufacturing method of the MPS diode the following steps are included:
S110: the substrate (1) for having front and back is provided；
S210: injecting the first Doped ions on substrate (1) in preset ion implanted region, is formed the first ion implanted region (2),
Injected on the first ion implanted region (2) using the second Doped ions, on the first ion implanted region (2) formed second from
Sub- injection region (3)；
S310: dielectric layer (5) are settled out on the surface and substrate (1) schottky region (4) of the second ion implanted region (3)；
S410: performing etching removal dielectric layer (5), is removed photoresist after etching using wet process, exposure the second ion implanted region (3) surface and
Substrate (1) schottky region (4) front；
S510: short annealing oxidation, on exposed the second ion implanted region (3) surface and substrate (1) schottky region (4) front
It is formed oxide layer (6)；
S610: carrying out pre-treatment to the oxide layer (6), get rid of the oxide layer (6), exposure the second ion implanted region (3)
Surface and substrate (1) schottky region (4) front；
S710: the surface preparation in the front and the second ion implanted region (3) of the substrate (1) schottky region (4) prepares metal
Layer (7), so that the contact surface of the substrate (1) schottky region (4) and the metal layer (7) forms Schottky contacts, described
Second ion implanted region (3) and the contact surface of the metal layer (7) form Ohmic contact.
2. the manufacturing method of MPS diode as described in claim 1, which is characterized in that in the S110: offer has front
The step of being carried out later with N-type FZ substrate (1) step at the back side:
S111: in front growth field oxygen layer (8) of the substrate (1)；
S112: ion implantation window (9) are formed using chemical wet etching field ring and cellular in preset ion implanted region, are retained institute
State the field oxygen layer (8) of substrate (1) schottky region (4) at ion implantation window (9) interval；
The step S310 is specifically included: in the surface of the second ion implanted region (3) and the field oxygen of substrate (1) schottky region (4)
Layer (8) surface is settled out dielectric layer (5)；
The step S410 is specifically included: being performed etching removal and is located at the second ion implanted region (3) surface and substrate (1) Schottky
The dielectric layer (5) on area (4) field oxygen layer (8) surface and the field oxygen layer (8) for being located at substrate (1) schottky region (4), use after etching
Wet process is removed photoresist, exposure the second ion implanted region (3) surface and substrate (1) schottky region (4) front.
3. the manufacturing method of MPS diode as described in claim 1, which is characterized in that quickly moved back described in step S510
Fire oxidation carries out in 800 ~ 1000 DEG C, and the time of short annealing oxidation is 8 ~ 10 seconds, is formed with a thickness of the oxide layer within 5nm
(6).
4. the manufacturing method of MPS diode as described in claim 1, which is characterized in that the substrate (1) uses N-type FZ
Type.
5. the manufacturing method of MPS diode as described in claim 1, which is characterized in that step S610 specifically: right with HF acid
The oxide layer (6) carries out pre-treatment, gets rid of the oxide layer (6), exposure the second ion implanted region (3) surface and substrate
(1) schottky region (4) front.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810872296.4A CN109037058A (en) | 2018-08-02 | 2018-08-02 | A kind of manufacturing method of MPS diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810872296.4A CN109037058A (en) | 2018-08-02 | 2018-08-02 | A kind of manufacturing method of MPS diode |
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| Publication Number | Publication Date |
|---|---|
| CN109037058A true CN109037058A (en) | 2018-12-18 |
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| CN201810872296.4A Pending CN109037058A (en) | 2018-08-02 | 2018-08-02 | A kind of manufacturing method of MPS diode |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102437201A (en) * | 2011-11-25 | 2012-05-02 | 中国科学院微电子研究所 | Sic junction barrier schottky diode and manufacturing method thereof |
| CN102479677A (en) * | 2010-11-29 | 2012-05-30 | 无锡华润上华半导体有限公司 | Semiconductor device and manufacture method thereof |
| CN103594367A (en) * | 2012-08-15 | 2014-02-19 | 中芯国际集成电路制造(上海)有限公司 | Transistor and forming method thereof |
| CN106057914A (en) * | 2016-07-27 | 2016-10-26 | 西安电子科技大学 | Double step field plate terminal based 4H-SiC Schottky diode and manufacturing method thereof |
| US20170076949A1 (en) * | 2014-02-27 | 2017-03-16 | Semiconductor Components Industries, Llc | Semiconductor device and manufacturing method thereof |
-
2018
- 2018-08-02 CN CN201810872296.4A patent/CN109037058A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102479677A (en) * | 2010-11-29 | 2012-05-30 | 无锡华润上华半导体有限公司 | Semiconductor device and manufacture method thereof |
| CN102437201A (en) * | 2011-11-25 | 2012-05-02 | 中国科学院微电子研究所 | Sic junction barrier schottky diode and manufacturing method thereof |
| CN103594367A (en) * | 2012-08-15 | 2014-02-19 | 中芯国际集成电路制造(上海)有限公司 | Transistor and forming method thereof |
| US20170076949A1 (en) * | 2014-02-27 | 2017-03-16 | Semiconductor Components Industries, Llc | Semiconductor device and manufacturing method thereof |
| CN106057914A (en) * | 2016-07-27 | 2016-10-26 | 西安电子科技大学 | Double step field plate terminal based 4H-SiC Schottky diode and manufacturing method thereof |
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