CN109032434A - Photosensitive sensor and display based on thin film transistor (TFT) - Google Patents
Photosensitive sensor and display based on thin film transistor (TFT) Download PDFInfo
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- CN109032434A CN109032434A CN201810972213.9A CN201810972213A CN109032434A CN 109032434 A CN109032434 A CN 109032434A CN 201810972213 A CN201810972213 A CN 201810972213A CN 109032434 A CN109032434 A CN 109032434A
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- film transistor
- tft
- thin film
- photosensitive sensor
- capacitor
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Nonlinear Science (AREA)
- Human Computer Interaction (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a kind of photosensitive sensor and display based on thin film transistor (TFT), photosensitive sensor includes thin film transistor (TFT), capacitor and detection circuit, and capacitor is connect with thin film transistor (TFT)；Detection circuit detects the voltage value at capacitor both ends every preset time period, and determines the trigger signal that photosensitive sensor senses using the voltage value detected.Wherein, when photosensitive sensor is absorbed into optical radiation signal, the dark current in thin film transistor (TFT) increases, and the size of dark current is in proportionate relationship in the size and thin film transistor (TFT) of the voltage value at capacitor both ends.Compared to existing technologies, since the manufacturing process of thin film transistor (TFT) is simple, the cost of touch sensing system can be effectively reduced, simultaneously, if setting thin film transistor (TFT) only incudes the optical radiation signal of specific band (ultraviolet to infrared band), after thin film transistor (TFT) is applied to touch sensing system, moreover it is possible to reduce the probability that accidentally touching occurs.
Description
Technical field
The present invention relates to sensor technical field more particularly to a kind of photosensitive sensors and display based on thin film transistor (TFT)
Device.
Background technique
With the development of touch sensible technology, touch sensible has started to penetrate into various industries, wherein existing touching
Touching induction technology mainly includes capacitor and resistive touch induction technology based on induction physics Parameters variation, and based on actively
The touch sensible technology of infrared sensor realizes since both induction technologies require special sensor component, because
This touch sensing system higher cost for utilizing both induction technologies to realize, and be also easy to occur accidentally to touch.
Summary of the invention
The main purpose of the present invention is to provide a kind of photosensitive sensor and display based on thin film transistor (TFT), it is intended to solve
Touch sensing system higher cost certainly in the prior art and easy the technical issues of accidentally touching.
To achieve the above object, first aspect present invention provides a kind of photosensitive sensor based on thin film transistor (TFT), the light
Dependent sensor includes thin film transistor (TFT), capacitor and detection circuit, and the capacitor is connect with the thin film transistor (TFT), the detection electricity
Road and the capacitance connection；
The detection circuit detects the voltage value at the capacitor both ends every preset time period, and utilizes the voltage detected
Value determines the trigger signal that the photosensitive sensor senses, wherein when the photosensitive sensor is absorbed into optical radiation signal,
Dark current in the thin film transistor (TFT) increases, dark electricity in the size of the voltage value at the capacitor both ends and the thin film transistor (TFT)
The size of stream is in proportionate relationship.
Optionally, the wavelength value interval of the optical radiation signal is the wavelength value interval of near infrared light.
Optionally, the photosensitive sensor further includes one or two auxiliary thin film transistor (TFT), and the thin film transistor (TFT) includes
First connectivity port and second connection end mouth, when the auxiliary thin film transistor (TFT) is one, the auxiliary thin film transistor (TFT) and described the
One connectivity port or second connection end mouth connection, when the auxiliary thin film transistor (TFT) is two, two auxiliary thin film transistor (TFT)s point
It is not connect with first connectivity port with second connection end mouth, the capacitor is connect with first connectivity port.
Optionally, when the auxiliary thin film transistor (TFT) is one, and the auxiliary thin film transistor (TFT) and first connectivity port
When connection, the thin film transistor (TFT) uses AC pulse signal；When the auxiliary thin film transistor (TFT) is one, and the auxiliary film crystal
When pipe is connect with the second connection end mouth, the thin film transistor (TFT) uses DC pulse signal.
Optionally, when the auxiliary thin film transistor (TFT) is two, the thin film transistor (TFT) uses DC pulse signal.
Optionally, the photosensitive sensor is driven using integrated gate drive circuitry.
Optionally, for the photosensitive sensor when in running order, the thin film transistor (TFT) is in reverse-bias state.
Optionally, the display includes photosensitive sensor, integrated gate drive circuitry and pixel array, the photosensitive biography
Sensor and the integrated gate drive circuitry and pixel array are integrally formed；
The photosensitive sensor is the photosensitive sensor that first aspect present invention provides.
Photosensitive sensor provided by the present invention based on thin film transistor (TFT), including thin film transistor (TFT), capacitor and detection electricity
Road, capacitor are connect with thin film transistor (TFT)；Detection circuit detects the voltage value at capacitor both ends every preset time period, and utilizes detection
To voltage value determine trigger signal that photosensitive sensor senses.Wherein, when photosensitive sensor is absorbed into optical radiation signal,
Dark current in thin film transistor (TFT) increases, in the size and thin film transistor (TFT) of the voltage value at capacitor both ends the size of dark current be in than
Example relationship.Compared to existing technologies, since the manufacturing process of thin film transistor (TFT) is simple, touch sensible can be effectively reduced
The cost of system, meanwhile, if setting thin film transistor (TFT) only incudes the optical radiation signal of specific band (ultraviolet to infrared band),
After thin film transistor (TFT) is applied to touch sensing system, moreover it is possible to reduce the probability that accidentally touching occurs.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those skilled in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 is the circuit diagram of the photosensitive sensor based on thin film transistor (TFT) in the embodiment of the present invention；
Fig. 2 is another circuit diagram of the photosensitive sensor based on thin film transistor (TFT) in the embodiment of the present invention；
Fig. 3 is the another circuit diagram of the photosensitive sensor based on thin film transistor (TFT) in the embodiment of the present invention.
Specific embodiment
In order to make the invention's purpose, features and advantages of the invention more obvious and easy to understand, below in conjunction with the present invention
Attached drawing in embodiment, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described reality
Applying example is only a part of the embodiment of the present invention, and not all embodiments.Based on the embodiments of the present invention, those skilled in the art
Member's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
Photosensitive sensor provided in the embodiment of the present invention includes thin film transistor (TFT), capacitor and detection circuit, capacitor with
Thin film transistor (TFT) connection；When photosensitive sensor is when in running order, detection circuit every preset time period (a such as frame width),
The voltage value at capacitor both ends is detected, and determines the trigger signal that photosensitive sensor senses using the voltage value detected, wherein
When photosensitive sensor is absorbed into optical radiation signal, dark current in thin film transistor (TFT) increases, the voltage value at capacitor both ends it is big
The small size with dark current in thin film transistor (TFT) is in proportionate relationship.
It is understood that different trigger signals can cause the electric conductivity of thin film transistor (TFT) that different degrees of change occurs
Become, and after the electric conductivity of thin film transistor (TFT) changes, the voltage value at above-mentioned capacitor both ends can be caused to occur naturally corresponding
Change, therefore, by detecting the voltage value at capacitor both ends, and using the situation of change of the voltage value, that is, can determine that photosensitive biography
The trigger signal that sensor senses.
Embodiment in order to better understand the present invention, referring to Fig. 1, Fig. 1 is to be based on film crystal in the embodiment of the present invention
The circuit diagram of the photosensitive sensor of pipe provides a kind of photosensitive sensor in the embodiment of the present invention, which includes
Thin film transistor (TFT) M1Auxiliary thin film transistor (TFT) M2Capacitor C and detection circuit (not shown), wherein auxiliary thin film transistor (TFT) M2Including the first son
Thin film transistor (TFT) M21With the second sub- thin film transistor (TFT) M22, the first sub- thin film transistor (TFT) M21With thin film transistor (TFT) M1First connection
Port 1 connects, the second sub- thin film transistor (TFT) M22With thin film transistor (TFT) M1Second connection end mouth 2 connect, capacitor C and above-mentioned first
Connectivity port 1 connects, thin film transistor (TFT) M1Using DC pulse signal.
Wherein, in photosensitive sensor normal use, at interval of the time of a frame width, the first sub- thin film transistor (TFT) M21Meeting
It is driven and is connected by AC pulse signal AC1 first, capacitor C is discharged, is then again charged to capacitor C first after certain voltage value
Sub- thin film transistor (TFT) M21It closes, at this time thin film transistor (TFT) M1It is maintained at reverse-bias state always, when in the same frame width
In time, if thin film transistor (TFT) M1It is excited by any light source, then will lead to thin film transistor (TFT) M1In dark current increase, from
And capacitor C is caused to be discharged into certain voltage value, when according to the sub- thin film transistor (TFT) M of timing second22It is driven by AC pulse signal AC2
When dynamic conducting, the voltage value on capacitor C can be perceived by external sample circuit, then according to the change of the voltage value perceived
Change can be accurately judged to the trigger signal that photosensitive sensor senses.
Photosensitive sensor provided by the present invention based on thin film transistor (TFT), including thin film transistor (TFT), capacitor and detection electricity
Road, capacitor are connect with thin film transistor (TFT)；Detection circuit detects the voltage value at capacitor both ends every preset time period, and utilizes detection
To voltage value determine trigger signal that photosensitive sensor senses.Wherein, when photosensitive sensor is absorbed into optical radiation signal,
Dark current in thin film transistor (TFT) increases, in the size and thin film transistor (TFT) of the voltage value at capacitor both ends the size of dark current be in than
Example relationship.Compared to existing technologies, since the manufacturing process of thin film transistor (TFT) is simple, touch sensible can be effectively reduced
The cost of system, meanwhile, if setting thin film transistor (TFT) only incudes the optical radiation signal of specific band (ultraviolet to infrared band),
After thin film transistor (TFT) is applied to touch sensing system, moreover it is possible to reduce the probability that accidentally touching occurs.
Further, based on the above embodiment, another photosensitive sensor is also provided in the embodiment of the present invention, is please referred to
Fig. 2, Fig. 2 are another circuit diagram of the photosensitive sensor based on thin film transistor (TFT) in the embodiment of the present invention, the light sensor
Device includes thin film transistor (TFT) M1, auxiliary thin film transistor (TFT) M2And capacitor C, auxiliary thin film transistor (TFT) M2With thin film transistor (TFT) M1First connect
The connection of port 1 is connect, capacitor C is connect with the first connectivity port 1.
Wherein, thin film transistor (TFT) M1Using AC pulse signal.
Further, based on the above embodiment, another photosensitive sensor is provided again in the embodiment of the present invention, is please referred to
Fig. 3, Fig. 3 are the another circuit diagram of the photosensitive sensor based on thin film transistor (TFT) in the embodiment of the present invention, the light sensor
Device includes thin film transistor (TFT) M1, auxiliary thin film transistor (TFT) M2And capacitor C, auxiliary thin film transistor (TFT) M2With thin film transistor (TFT) M1Second connect
The connection of port 2 is connect, capacitor C is connect with the first connectivity port 1.Wherein, thin film transistor (TFT) M1Using DC pulse signal.
Wherein, the induction to extraneous contact or non-contact type signal may be implemented in above-mentioned photosensitive sensor, such as use pair
The continuous acquisition of multispectral (such as from ultraviolet to near-infrared) signal realizes touch sensible.Alternatively, above-mentioned photosensitive sensor can be only
Incude the optical signal of specific band, the wavelength optical signal similar with the wavelength of near infrared light is such as only incuded, to reduce above-mentioned
The probability of accidentally touching occurs for photosensitive sensor.
In addition, above-mentioned photosensitive sensor can be using GOA (Gate Driver On Array integrates gate driving) circuit
It drives, can thus cancel the driving circuit of traditional photosensitive sensor external, and light sensor system can be further reduced
The cost of system.Wherein, above-mentioned photosensitive sensor can be applied to industrial environment, nuclear industry environment, other radiation environments or the mankind
The environment of cisco unity malfunction and life；Or it is used for safety precaution field, such as residential quarters monitoring, unmanned island monitors and nobody
Desert monitoring etc..
Further, the present invention also provides a kind of display based on thin film transistor (TFT), which includes light sensor
Device, GOA circuit and pixel array, and photosensitive sensor and GOA circuit and pixel array are integrally formed.Wherein, above-mentioned photosensitive biography
Sensor is any one photosensitive sensor provided in the above embodiment of the present invention.
Wherein, photosensitive sensor is integrally formed after processing together with GOA circuit and pixel array, and display can be greatly decreased
Demand of the Qi Mozu factory to third party's touch sensible device (such as resistance, capacitance type sensor and active infrared sensor) is shown
Cost can be greatly decreased in Shi Qimozu factory.
In addition, the surface of display is due to being not covered with after photosensitive sensor is processed together with GOA circuit and pixel array
Touch perception device, therefore the light transmittance of display can also be increased.
In addition, after photosensitive sensor is processed together with LCD, the surface of display is due to the touch perceptron that is not covered with
Part, therefore the light transmittance of LCD can also be increased.
Wherein, the above-mentioned photosensitive sensor based on thin film transistor (TFT) can use a-Si amorphous silicon technology, LTPS (Low
Temperature Poly-silicon, low temperature polycrystalline silicon) and technology and CGS (Contiunuous Grain Silicon, continuously
Granular crystal silicon) technology processed.
Display based on thin film transistor (TFT) provided by the embodiment of the present invention, including photosensitive sensor and GOA circuit and
Pixel array, and photosensitive sensor and GOA circuit and pixel array are integrally formed, compared to existing technologies, due to above-mentioned
Display does not need third party's touch sensible device, therefore can effectively reduce the production cost of display.
In the above-described embodiments, it all emphasizes particularly on different fields to the description of each embodiment, there is no the portion being described in detail in some embodiment
Point, it may refer to the associated description of other embodiments.
It is right the above are to a kind of description of photosensitive sensor and display based on thin film transistor (TFT) provided by the present invention
In those skilled in the art, thought according to an embodiment of the present invention has change in specific embodiments and applications
Become place, to sum up, the contents of this specification are not to be construed as limiting the invention.
Claims (8)
1. a kind of photosensitive sensor based on thin film transistor (TFT), which is characterized in that the photosensitive sensor include thin film transistor (TFT),
Capacitor and detection circuit, the capacitor are connect with thin film transistor (TFT), the detection circuit and the capacitance connection；
The detection circuit detects the voltage value at the capacitor both ends every preset time period, and true using the voltage value detected
The trigger signal that the fixed photosensitive sensor senses, wherein described when the photosensitive sensor is absorbed into optical radiation signal
Dark current in thin film transistor (TFT) increases, dark current in the size of the voltage value at the capacitor both ends and the thin film transistor (TFT)
Size is in proportionate relationship.
2. photosensitive sensor as described in claim 1, which is characterized in that the wavelength value interval of the optical radiation signal is close
The wavelength value interval of infrared light.
3. multispectral photosensitive sensor as described in claim 1, which is characterized in that the photosensitive sensor further include one or
Two auxiliary thin film transistor (TFT)s, the thin film transistor (TFT) include the first connectivity port and second connection end mouth, the auxiliary film crystal
At Guan Weiyi, the auxiliary thin film transistor (TFT) is connect with first connectivity port or the second connection end mouth, described auxiliary thin
When film transistor is two, two auxiliary thin film transistor (TFT)s are connect with first connectivity port with second connection end mouth respectively, institute
Capacitor is stated to connect with first connectivity port.
4. photosensitive sensor as claimed in claim 3, which is characterized in that and described when the auxiliary thin film transistor (TFT) is one
When auxiliary thin film transistor (TFT) is connect with first connectivity port, the thin film transistor (TFT) uses AC pulse signal；When described auxiliary thin
Film transistor is one, and when the auxiliary thin film transistor (TFT) is connect with the second connection end mouth, the thin film transistor (TFT) use
DC pulse signal.
5. photosensitive sensor as claimed in claim 3, which is characterized in that described when the auxiliary thin film transistor (TFT) is two
Thin film transistor (TFT) uses DC pulse signal.
6. the photosensitive sensor as described in claim 1 to 5 any one, which is characterized in that the photosensitive sensor is using collection
It is driven at gate driving circuit.
7. photosensitive sensor as claimed in claim 6, which is characterized in that the photosensitive sensor when in running order,
The thin film transistor (TFT) is in reverse-bias state.
8. a kind of display based on thin film transistor (TFT), which is characterized in that the display includes photosensitive sensor, integrated grid
Driving circuit and pixel array, the photosensitive sensor and the integrated gate drive circuitry and pixel array are integrally formed；
The photosensitive sensor is photosensitive sensor described in claim 1 to 7 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810972213.9A CN109032434A (en) | 2018-08-24 | 2018-08-24 | Photosensitive sensor and display based on thin film transistor (TFT) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810972213.9A CN109032434A (en) | 2018-08-24 | 2018-08-24 | Photosensitive sensor and display based on thin film transistor (TFT) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109032434A true CN109032434A (en) | 2018-12-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810972213.9A Pending CN109032434A (en) | 2018-08-24 | 2018-08-24 | Photosensitive sensor and display based on thin film transistor (TFT) |
Country Status (1)
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5480810A (en) * | 1994-06-17 | 1996-01-02 | General Electric Company | Method of fabricating a radiation imager with common passivation dielectric for gate electrode and photosensor |
| CN101770316A (en) * | 2010-01-08 | 2010-07-07 | 友达光电股份有限公司 | Optical sensing device and display with optical sensing device |
| CN102520828A (en) * | 2011-10-24 | 2012-06-27 | 友达光电股份有限公司 | Light-sensitive input device and display device |
| CN105044952A (en) * | 2015-08-27 | 2015-11-11 | 京东方科技集团股份有限公司 | Optical sensor and driving method thereof |
-
2018
- 2018-08-24 CN CN201810972213.9A patent/CN109032434A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5480810A (en) * | 1994-06-17 | 1996-01-02 | General Electric Company | Method of fabricating a radiation imager with common passivation dielectric for gate electrode and photosensor |
| CN101770316A (en) * | 2010-01-08 | 2010-07-07 | 友达光电股份有限公司 | Optical sensing device and display with optical sensing device |
| CN102520828A (en) * | 2011-10-24 | 2012-06-27 | 友达光电股份有限公司 | Light-sensitive input device and display device |
| CN105044952A (en) * | 2015-08-27 | 2015-11-11 | 京东方科技集团股份有限公司 | Optical sensor and driving method thereof |
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Application publication date: 20181218 |
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