CN109032401B

CN109032401B - Conductive laminated structure, preparation method of conductive laminated structure and touch panel

Info

Publication number: CN109032401B
Application number: CN201810703651.5A
Authority: CN
Inventors: 胡江平
Original assignee: Guangzhou Guoxian Technology Co Ltd
Current assignee: Guangzhou Guoxian Technology Co Ltd
Priority date: 2018-06-30
Filing date: 2018-06-30
Publication date: 2021-11-12
Anticipated expiration: 2038-06-30
Also published as: CN109032401A

Abstract

The invention provides a conductive laminated structure, a preparation method of the conductive laminated structure and a touch panel, wherein an opening exposing a routing layer is formed on an adhesion increasing layer corresponding to a frame area, and a nano metal wire conductive layer fills the opening to be in contact with the routing layer, so that the contact area of the nano metal wire conductive layer and routing is increased, the conductive performance and the sensitivity are further increased, and the design requirement of a narrow frame can be met; furthermore, the size of the opening close to one end of the routing layer is larger than that of the opening far away from one end of the routing layer, the opening is filled with the nano metal wire conducting layer, so that the nano metal wire conducting layer is connected with the adhesion promotion layer in a buckling mode through the opening, the adhesion force of the nano metal wire conducting layer and the adhesion promotion layer is increased, and the adhesion force of the nano metal wire conducting layer and the substrate is indirectly enhanced.

Description

Conductive laminated structure, preparation method of conductive laminated structure and touch panel

Technical Field

The invention relates to the technical field of display, in particular to a conductive laminated structure, a preparation method of the conductive laminated structure and a touch panel.

Background

With the rapid development of science and technology, the development and design of scientific and technological products considering human factors has gradually become a trend. Touch panels (Touch panels) have been increasingly used in fields such as tourist guide systems, automatic teller machines, portable electronic products, and industrial control systems because of their convenient usage.

The touch panel positions a touch position by receiving a touch of a contact such as a finger or a touch pen, and displays a desired image by reading an instruction of the touch position through the controller. A transparent electrode of a touch electrode of a conventional touch panel is usually made of Indium Tin Oxide (ITO), which has high light transmittance and good electrical conductivity. However, the ITO has a large sheet resistance, and when the ITO is applied to a large-sized touch panel, the conductivity and sensitivity of the touch panel cannot be ensured. In addition, the overall cost of ITO is very expensive and very vulnerable. Therefore, at present, the nano metal wire has gradually become a material replacing ITO. However, the conventional process for fabricating the nano metal lines has difficulty in satisfying the requirements of adhesion and narrow frame at the same time.

Disclosure of Invention

The invention aims to provide a conductive laminated structure, a preparation method of the conductive laminated structure and a touch panel, which can meet the design requirements of adhesion and narrow frames at the same time.

In order to achieve the above object, the present invention provides a conductive laminated structure comprising:

the substrate comprises a visible area and a frame area surrounding the visible area;

a routing layer located on a frame region of the substrate;

the adhesion promotion layer is positioned on the visible area and the frame area of the substrate and covers the routing layer, an opening for exposing the routing layer is formed in the adhesion promotion layer, and the opening is arranged around the visible area;

and the nano metal wire conducting layer fills the opening and covers the adhesion promoting layer so as to be electrically connected with the wiring layer through the opening.

Optionally, the size of the opening near one end of the routing layer is larger than the size of the opening far from one end of the routing layer, so that the nano metal wire conducting layer is connected with the adhesion promotion layer in a snap-in manner through the opening.

Optionally, the shape of the cross section of the opening along the thickness direction of the tackifying layer is an inverted T shape; alternatively, the shape of the cross section of the opening in the thickness direction of the anchor layer is trapezoidal.

Optionally, the routing layer includes a plurality of traces, a gap is formed between each of the traces, the gap exposes a portion of the substrate, and the nanometal wire conductive layer filled in the opening covers the plurality of traces and the substrate exposed by the gap.

The invention also provides a preparation method of the conductive laminated structure, which comprises the following steps:

providing a substrate, wherein the substrate comprises a visible area and a frame area surrounding the visible area;

forming a wiring layer on the frame area of the substrate;

forming an adhesion promotion layer on a visible area and a frame area of the substrate, wherein the adhesion promotion layer covers the wiring layer, an opening for exposing the wiring layer is formed in the adhesion promotion layer of the frame area, and the opening is arranged around the visible area;

and forming a nano metal wire conducting layer on the adhesion promoting layer, wherein the nano metal wire conducting layer fills the opening and covers the adhesion promoting layer so as to be electrically connected with the wiring layer through the opening.

Optionally, the step of forming the adhesion promoting layer and the opening includes:

forming a first insulating layer on a visible area and a frame area of the substrate, wherein a first opening is formed in the first insulating layer of the frame area;

and forming a second insulating layer on the first insulating layer, wherein a second opening aligned with the first opening is formed in the second insulating layer of the frame area, the first opening and the second opening form the opening, and the first insulating layer and the second insulating layer form the adhesion-promoting layer.

Optionally, after forming the first opening and before forming the second insulating layer, the method for manufacturing a conductive stacked structure further includes:

coating a nano-metal wire solution in the first opening;

and heating and curing the nano metal wire solution coated on the first opening.

Optionally, after forming the second opening, the method for preparing the conductive laminated structure further includes:

coating a nano metal wire solution on the second insulating layer and in the second opening;

and heating and curing the nano metal wire solution on the second insulating layer and in the second opening, wherein the nano metal wire solution cured in the first opening, the second opening and on the second insulating layer forms the nano metal wire conducting layer.

sequentially forming a third insulating layer and a fourth insulating layer on the substrate;

forming a third opening in the third insulating layer and the fourth insulating layer, the third opening penetrating the third insulating layer and the fourth insulating layer;

and removing the third insulating layer on the side wall of the third opening to widen one end of the third opening close to the substrate to form the opening, wherein the residual third insulating layer and the residual fourth insulating layer form the adhesion promoting layer.

The invention provides a touch panel which comprises the conductive laminated structure.

In the conductive laminated structure, the preparation method of the conductive laminated structure and the touch panel provided by the invention, the opening exposing the routing layer is formed on the adhesion increasing layer corresponding to the frame area, the opening surrounds the visible area, and the nano metal wire conductive layer fills the opening to be in contact with the routing layer, so that the contact area between the nano metal wire conductive layer and the routing is increased, the conductive performance and the sensitivity are further increased, and the design requirement of a narrow frame can be met.

Furthermore, the size of the opening close to one end of the routing layer is larger than that of the end close to the routing layer, the opening is filled with the nano metal wire conducting layer, the nano metal wire conducting layer is connected with the adhesion-promoting layer in a buckling mode through the opening, the nano metal wire conducting layer is combined with the adhesion-promoting layer more tightly, the adhesion force of the nano metal wire conducting layer and the adhesion-promoting layer is increased, the nano metal wire conducting layer is more difficult to fall off from the substrate, and the adhesion force of the nano metal wire conducting layer and the substrate is indirectly enhanced.

Drawings

Fig. 1 is a schematic diagram of a conductive stacked structure according to an embodiment of the present invention;

FIG. 2a is a schematic view of an opening provided in an embodiment of the present invention;

FIG. 2b is a schematic view of two openings provided in an embodiment of the present invention;

FIG. 3 is a schematic diagram of another conductive stack-up structure provided by an embodiment of the present invention;

fig. 4 is a flowchart of a method for manufacturing a conductive stacked structure according to an embodiment of the present invention;

FIG. 5 is a schematic diagram of a routing layer formed on a substrate according to an embodiment of the present invention;

fig. 6 is a schematic diagram illustrating a first insulating layer formed according to an embodiment of the invention;

fig. 7 is a schematic diagram illustrating a first opening formed in a first insulating layer according to an embodiment of the invention;

fig. 8 is a schematic diagram illustrating a second insulating layer formed according to an embodiment of the invention;

fig. 9 is a schematic diagram illustrating a second opening formed in a second insulating layer according to an embodiment of the invention;

FIG. 10 is a schematic diagram of forming a conductive layer of a nano-metal line according to an embodiment of the present invention;

FIG. 11 is a schematic diagram illustrating the formation of a third opening according to an embodiment of the present invention;

fig. 12 is a schematic view of widening the third opening according to an embodiment of the present invention;

fig. 13 is a schematic diagram of forming a touch electrode according to an embodiment of the invention;

the structure comprises a substrate 1, a visible area 11, a frame area 12, a wiring layer 2, an adhesion-promoting layer 3, a first insulating layer 31, a second insulating layer 32, a third insulating layer 33, a fourth insulating layer 34, an opening 4, a first opening 41, a second opening 42, a third opening 43, a conducting layer 5, a nanometer metal wire 51, a first subsection 52 and a second subsection.

Detailed Description

In the current process for preparing a conductive stacked structure including a nano metal wire, a nano metal wire solution is generally directly coated on a substrate to form a nano metal wire conductive layer. However, the adhesion of the conductive layer of the nano-metal wire to the substrate is poor, so an adhesion promoting layer needs to be further coated on the conductive layer of the nano-metal wire to improve the adhesion between the conductive layer of the nano-metal wire and the substrate. However, although the adhesion problem of the nano metal wire conductive layer is solved by coating the adhesion promoting layer, the material of the nano metal wire conductive layer and the material of the adhesion promoting layer are mutually blended, so that the contact area between the nano metal wire conductive layer and the wiring is greatly reduced, and the conductive performance of the touch panel is reduced. Therefore, in order to increase the contact area between the nano metal wire conductive layer and the trace, the size of the frame area is increased, but the design requirement of narrow frame development cannot be met. That is, it is difficult for the process to satisfy the requirements of adhesion and narrow frame.

Based on the above findings, the application provides a conductive laminated structure, a preparation method of the conductive laminated structure and a touch panel, an opening which exposes the routing layer is formed on the adhesion promoting layer corresponding to the frame area, the opening surrounds the visible area, the nano metal wire conductive layer fills the opening to contact with the routing layer, the contact area of the nano metal wire conductive layer and the routing line is increased, the conductive performance and the sensitivity are increased, and the design requirement of a narrow frame can be met.

The following describes in more detail embodiments of the present invention with reference to the schematic drawings. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.

Please refer to fig. 1, which is a schematic diagram of a conductive stacked structure according to the present embodiment. The conductive laminated structure is formed on a substrate 1, the substrate 1 comprises a visible area 11 and a frame area 12 surrounding the visible area 11, the conductive laminated structure comprises a routing layer 2, and the routing layer 2 is located on the frame area 12 of the substrate 1; the adhesion promotion layer 3 is positioned on the visible area 11 and the frame area 12 of the substrate 1 and covers the routing layer 2, an opening 4 for exposing the routing layer 2 is formed in the adhesion promotion layer 3 of the frame area 12, and the opening 4 is arranged around the visible area 11; and the nano metal wire conducting layer 5 fills the opening 4 and covers the adhesion promoting layer 3, so that the nano metal wire conducting layer 5 is electrically connected with the wiring layer 2 through the opening 4.

Specifically, referring to fig. 2a and 2b, the frame region 12 of the substrate 1 has a certain width, the visible region 11 is generally used for transparent display, and the frame region 12 is generally opaque to protrude the display content of the visible region 11. In one embodiment, the substrate 1 has a square shape, and the frame region 12 has a square ring shape.

With continued reference to fig. 1, the routing layer 2 covers the border area 12 of the substrate 1, i.e. the routing layer 2 is in direct contact with the substrate 1, and the adhesion between the routing layer 2 and the substrate 1 is greater compared to nano-metal wires. Further, the routing layer 2 includes a plurality of routing lines, each routing line has a gap therebetween, preferably, the gaps between two adjacent routing lines are equal, and each routing line can be used for leading out the touch electrode of the visible area 11 in a subsequent process. The gap exposes a part of the substrate 1, so that the part of the nano metal wire conducting layer 5 embedded in the opening 4 can be contacted with the substrate 1 at intervals, and the adhesion between the wiring layer 2 and the nano metal wire conducting layer 5 is good, so that the nano metal wire conducting layer 5 can be further prevented from being separated from the substrate 1. In this embodiment, since the frame area 12 is in a square ring shape, each of the traces is also in a square ring shape.

Further, the adhesion promotion layer 3 covers the wiring layer 2 and the substrate 1 corresponding to the visible area 11, and the adhesion promotion layer 3 is usually an organic substance with viscosity for enhancing the adhesion between the nano metal wire conductive layer 5 and the substrate 1. At least part of the material of the adhesion promoting layer 3 can be mutually fused with the material of the nano metal wire conducting layer 5 in the thickness direction of the material, so that the nano metal wire conducting layer 5 is better attached to the substrate 1, and the nano metal wires in the nano metal wire conducting layer 5 are not easy to move due to the adhesion of the material of the adhesion promoting layer 3, the lap joint is firmer, and the conductivity and the sensitivity of the conductive laminated structure are further improved.

Further, the opening 4 is formed in the adhesion promoting layer 3 corresponding to the frame region 12, as shown in fig. 2a and 2b, the opening 4 is located in the frame region 12 and surrounds the visible area 11, and it may be an overall ring shape for the opening 4. The number of the ring-shaped openings 4 may be 1, and is "back" as shown in fig. 2 a. The number of the annular openings 4 may be plural, for example, 2, as shown in fig. 2b, which may further enhance the adhesion between the nano metal wire conductive layer 5 and the adhesion promoting layer 3, so that the nano metal wire conductive layer 5 is less likely to fall off from the substrate 1. The opening 4 is spaced from the inner edge and the outer edge of the frame region 12 for subsequent filling of the conductive layer material of the nano metal wire. The bottom of the opening 4 exposes a part of the wiring layer 2 and a part of the substrate 1, and the nano metal wire conducting layer 5 fills the opening 4 and extends to cover the adhesion promoting layer 3. The nanometer metal wire conducting layer 5 filled in the opening 4 covers a part of the wiring layer 2, and compared with the mode that the traditional nanometer metal wire extends out of the adhesion promotion layer and is lapped with the wiring layer, the contact area of the nanometer metal wire conducting layer 5 and the wiring layer 2 is increased to some extent, so that the conduction performance is increased, the conduction capability is ensured, the frame can be reduced adaptively, and the design requirement of a narrow frame is met.

Further, as shown in fig. 3, in a direction perpendicular to the substrate 1, a cross-sectional width H of one end of the opening 4 close to the routing layer 2 is larger than a cross-sectional width H' of one end of the opening 4 close to the routing layer 2, so that the opening 4 has a structure with a smaller top and a larger bottom, the nanometal wire conductive layer 5 forms a snap-fit connection with the adhesion-promoting layer 3 through the opening 4, so as to increase an adhesion force between the nanometal wire conductive layer 5 and the adhesion-promoting layer 3, and the adhesion-promoting layer 3 is in contact with the substrate 1, so that the adhesion force between the nanometal wire conductive layer 5 and the substrate 1 is indirectly increased. Alternatively, the shape of the cross section of the opening 4 along the thickness direction thereof may be an inverted "T" shape (as shown in fig. 1), and the forming step of the inverted "T" shaped opening 4 is simple and has low requirements on processes and equipment; alternatively, the shape of the cross section of the opening 4 along the thickness direction thereof may be trapezoidal (as shown in fig. 3), that is, the sidewall of the opening 4 is inclined to further enhance the adhesion between the nano metal wire conductive layer 5 and the adhesion promoting layer 3; of course, the opening 4 may also have other shapes, which are not illustrated here.

Referring to fig. 4, which is a flowchart illustrating a method for forming a conductive stacked structure according to the present embodiment, the method for forming the conductive stacked structure includes:

s1: providing a substrate, wherein the substrate comprises a visible area and a frame area surrounding the visible area;

s2: forming a wiring layer on the frame area of the substrate;

s3: forming an adhesion promotion layer on a visible area and a frame area of the substrate, wherein the adhesion promotion layer covers the wiring layer, an opening for exposing the wiring layer is formed in the adhesion promotion layer of the frame area, and the opening is arranged around the visible area;

s4: and forming a nano metal wire conducting layer on the adhesion promoting layer, wherein the nano metal wire conducting layer fills the opening and covers the adhesion promoting layer so as to be electrically connected with the wiring layer through the opening.

Specifically, referring to fig. 5, a substrate 1 is first provided, and the substrate 1 provides a support for the whole conductive laminated structure. The substrate 1 may be a rigid substrate formed of, for example, glass, metal, or a ceramic material, or may be a rigid substrate formed of, for example, acryl, Polymethylmethacrylate (PMMA), polyacrylonitrile-butadiene-styrene (ABS), Polyamide (PA), Polyimide (PI), polybenzimidazole Polybutylene (PB), polybutylene terephthalate (PBT), Polycarbonate (PC), Polyetheretherketone (PEEK), Polyetherimide (PEI), Polyethersulfone (PES), Polyethylene (PE), polyethylene terephthalate (PET), polyethylene tetrafluoroethylene (ETFE), polyethylene oxide, polyglycolic acid (PGA), polymethylpentene (PMP), Polyoxymethylene (POM), polyphenylene ether (PPE), polypropylene (PP), Polystyrene (PS), Polytetrafluoroethylene (PTFE), Polyurethane (PU), polyvinyl chloride (PVC), polyvinyl fluoride (PVF), or polyvinyl fluoride (PVF), A flexible substrate formed of any suitable insulating material, such as polyvinylidene chloride (PVDC), polyvinylidene fluoride (PVDF), or styrene-acrylonitrile (SAN), and the invention is not limited thereto. In this embodiment, the substrate 1 is a flexible substrate.

Next, the routing layer 2 is formed on the frame area 12 of the substrate 1, and as shown in fig. 5, the routing layer 2 covers the frame area 12 and directly contacts the substrate 1. The material of the routing layer 4 may be one or more of silver, gold, indium tin oxide, or graphene, in this embodiment, the material of the routing layer 2 is nano silver, the routing layer 2 is formed by a printing process, and then the routing layer 2 is etched into a plurality of traces by a laser etching process.

Referring to fig. 6 and 7, a first insulating layer 31 is formed on the substrate 1, and a first opening 41 is formed on the first insulating layer 31 corresponding to the frame region 12. Specifically, as shown in fig. 6, the first insulating layer 31 covers the routing layer 2 and the substrate 1 corresponding to the visible area 11, as shown in fig. 7, the first opening 41 is located in the first insulating layer 31 corresponding to the frame area 12, a cross-sectional width h of the first opening 41 is smaller than a width of the frame area 12, and a portion of the routing layer 2 is exposed by the first opening 41, as can also be seen from fig. 2a or 2b, the first opening 41 is disposed around the visible area 11.

Referring next to fig. 8, a nano-wire solution is coated in the first opening 41, and the nano-wire solution is a suspension solution formed by dissolving nano-wires in a specific solvent, such as water, an aqueous solution, an ionic solution, a saline solution, a supercritical fluid, oil or a mixture thereof. The solvent may also contain additives such as dispersants, surfactants, cross-linking agents, stabilizers, wetting agents or thickeners. After filling the first opening 41 with the nano-metal wire solution, heating and drying are performed to solidify the nano-metal wire solution in the first opening 41 to form a first subsection 51 of the nano-metal wire conductive layer 5, where the first subsection 51 fills the first opening 41.

With continued reference to fig. 8 and 9, the second insulating layer 32 is formed, the second insulating layer 32 covers the first insulating layer 31, and then a second opening 42 is formed in the second insulating layer 32 directly above the first opening 41, such that the first opening 41 is aligned with the second opening 42. The cross-sectional width h of the first opening 41 is larger than the cross-sectional width h' of the second opening 42, so that the snap-fit connection is conveniently formed subsequently. The first opening 41 and the second opening 42 constitute the opening 4, and the first insulating layer 31 and the second insulating layer 32 constitute the adhesion promoting layer 3.

Optionally, the first insulating layer 31 and the second insulating layer 32 may be made of the same material, so that the same process may be used to form the first opening 41 and the second opening 42, thereby saving the manufacturing cost. The material of the first insulating layer 31 and the second insulating layer 32 may be one or more of high molecular polymer, oxide, nitride, etc., the high molecular polymer may be polyvinyl alcohol (PVA), polyvinyl butyral (PVB resin), polyaniline (PAN or PANI), polyphenylene ether (PPE), polyphenylene acetylene (PPV), poly 3, 4-ethylenedioxythiophene (PEDOT), polystyrene sulfonic acid (PSS), poly 3-hexylthiophene (P3HT), poly 3-octylthiophene (P3OT), poly C-61-butyric acid-methyl ester (PCBM), poly [ 2-methoxy-5- (2-ethyl-hexyloxy) -1, 4-phenylene ethylene ] (MEH-PPV), etc., and the nitride may be silicon nitride, and the oxide may be silicon oxide. In this embodiment, the first insulating layer 31 and the second insulating layer 32 are made of a transparent optical adhesive prepared by using one or more adhesive materials such as polyamide resin, polyurethane resin, and epoxy resin.

Coating a transparent optical cement solution on the substrate 1 by adopting a spraying or spin coating process, and then forming the first insulating layer 31 or the second insulating layer 32 after heating and curing; in this embodiment, the first opening 41 and the second opening 42 are formed by exposure and development, but if the first insulating layer 31 or the second insulating layer 32 is made of a material other than transparent optical adhesive, the first opening 41 and the second opening 42 may be formed in other manners, and the present invention is not limited thereto. Further, if the opening 4 having a trapezoidal cross section as shown in fig. 3 is to be formed, the accuracy of the exposure apparatus used for exposure and development can be increased accordingly, and if the accuracy of the exposure apparatus is sufficiently high, the sidewalls of the first opening 41 and the second opening 42 can still be made to be inclined by the exposure and development method.

Next, referring to fig. 10, the nano metal wire solution is coated on the second insulating layer 32 and in the opening 4. Specifically, the nano-metal wire solution is coated on the second insulating layer 32 and in the second opening 42, and is heated and cured to form a second sub-portion 52 of the nano-metal wire 5, wherein the second sub-portion 52 fills the second opening 42. The first subsection 51 is in contact with and communicated with the second subsection 52, so that the first subsection 51 and the second subsection 52 jointly form the nano metal wire conductive layer 5, the cross section width h of the first opening 41 is larger than the cross section width h' of the second opening 42, so that the number of nano metal wires in the first opening 41 is larger than that of the nano metal wires in the second opening 42, the nano metal wire conductive layer 5 is in snap-fit connection with the adhesion-promoting layer 3, and the adhesion force of the nano metal wire conductive layer 5 and the adhesion-promoting layer 3 is increased. Optionally, the nano metal wire conductive layer 5 includes a matrix and nano metal wires embedded in the matrix, the nano metal wires are overlapped through molecular force to form a conductive network, and the matrix is used for protecting the nano metal wires from being affected by external environments such as corrosion and abrasion. The nano-metal wire solution is formed on the adhesion promotion layer 3 by the coating method, which includes but is not limited to: inkjet, broadcast, gravure, letterpress, flexography, nanoimprint, screen printing, blade coating, spin coating, pin drawing (stylus), slot coating, or flow coating.

Further, as shown in fig. 11, in order to form the opening 4 having a small top and a large bottom, first, a third insulating layer 33 and a fourth insulating layer 34 may be formed on the substrate 1, then a third opening 43 may be formed in the third insulating layer 33 and the fourth insulating layer 34, the third opening 43 may penetrate the third insulating layer 33 and the fourth insulating layer 34 and expose a portion of the routing layer 2, and then, as shown in fig. 12, the third insulating layer 33 on the sidewall of the third opening 43 may be removed to widen the end of the third opening 43 close to the substrate 1, so that the dimension of the opening 4 close to the end of the substrate 1 is larger than the dimension of the end far from the substrate 1, thereby forming the opening 4.

Alternatively, when the third insulating layer 33 and the fourth insulating layer 34 are both inorganic layers, for example: the third insulating layer 33 is made of silicon oxide, the fourth insulating layer 34 is made of silicon nitride, the third insulating layer 33 on the inner wall of the third opening 43 can be etched by adopting a dry etching process, and the etching gas can be NF (NF), for example₃Or SF₆The etching rate of the one or more of the above-mentioned materials to silicon oxide is faster than that of silicon nitride, the third insulating layer 33 on the inner wall of the third opening 43 can be etched, and the influence on the fourth insulating layer 34 on the inner wall of the third opening 43 is small, so that the formed opening 4 has a structure with a small top and a large bottom, and the etching gas does not influence the wiring layer 2.

Alternatively, when the third insulating layer 33 is an organic layer and the fourth insulating layer 34 is an inorganic layer, for example: when the third insulating layer 33 is made of photoresist and the fourth insulating layer 34 is made of silicon oxide or silicon nitride, the photoresist on the inner wall of the third opening 43 may be dissolved by glass liquid, and the glass liquid has little influence on the silicon oxide or silicon nitride, so that the formed opening 4 has a structure with a small top and a large bottom. Of course, when the third insulating layer 33 is made of other organic materials, other organic solvents may be selected, and no examples are given here.

Alternatively, when the third insulating layer 33 and the fourth insulating layer 34 are both organic layers, an appropriate organic solvent may be selected according to the difference between the molecular weights of the third insulating layer 33 and the fourth insulating layer 34, so that the dissolution rate of the organic solvent to the third insulating layer 33 is faster than that of the fourth insulating layer 34, and the end of the third opening 43 close to the substrate 1 is widened to form the opening 4.

After the opening 4 is formed by a method of forming the third opening 43 and widening the size of one end of the third opening close to the substrate 1, the nano metal wire conducting layer 5 can be formed in the opening 4 and on the second insulating layer 32 at one time, so that the preparation process is simplified, and the preparation efficiency is improved.

Optionally, as shown in fig. 13, in this embodiment, after the nano metal wire conductive layer 5 is formed, a laser etching process is further adopted to etch the nano metal wire conductive layer 5, so as to form a discrete touch electrode in the visible area 11, and the plurality of traces are overlapped with the touch electrode through a subsequent process.

In view of the above, the present embodiment further provides a touch panel, which includes the conductive laminated structure. Further, the touch panel further comprises a cover plate and an attaching layer, wherein the attaching layer is located between the conductive laminated structure and the cover plate to attach the conductive laminated structure to the cover plate. The cover of the border region 12 may be coated with an opaque decorative material to highlight the graphics displayed in the visible region 11.

It is understood that the nano-metal wires herein may be nano-wires of gold (Au), silver (Ag), platinum (Pt), copper (Cu), cobalt (Co), palladium (Pd), etc. The silver nanowire is preferably a silver nanowire because silver has the characteristics of good conductivity, good light transmittance and the like.

In summary, in the conductive stacked structure, the method for manufacturing the conductive stacked structure, and the touch panel provided in the embodiments of the present invention, the opening exposing the routing layer is formed on the adhesion promoting layer corresponding to the frame region, and the nano metal wire conductive layer fills the opening to contact with the routing layer, so that the contact area between the nano metal wire conductive layer and the routing is increased, the conductive performance and the sensitivity are further increased, and the design requirement of the narrow frame can be met; furthermore, the size of the opening close to one end of the routing layer is larger than that of the opening far away from one end of the routing layer, the opening is filled with the nano metal wire conducting layer, so that the nano metal wire conducting layer is connected with the adhesion promotion layer in a buckling mode through the opening, the adhesion force of the nano metal wire conducting layer and the adhesion promotion layer is increased, and the adhesion force of the nano metal wire conducting layer and the substrate is indirectly enhanced.

The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any way. It will be understood by those skilled in the art that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims

1. An electrically conductive laminated structure, comprising:

a routing layer located on a frame region of the substrate;

a nano metal wire conductive layer filling the opening and covering the adhesion promoting layer to be electrically connected with the routing layer through the opening;

the size of the opening close to one end of the routing layer is larger than that of the opening far away from one end of the routing layer, so that the nano metal wire conducting layer is connected with the adhesion promotion layer in a buckling mode through the opening.

2. The conductive laminate structure of claim 1, wherein a cross-section of the opening in a thickness direction of the adhesion layer has an inverted "T" shape; alternatively, the shape of the cross section of the opening in the thickness direction of the anchor layer is trapezoidal.

3. The conductive stack structure of claim 1, wherein the routing layer comprises a plurality of traces, each of the traces has a gap therebetween, the gap exposes a portion of the substrate, and the opening is filled with a conductive layer of nano-metal wires covering the plurality of traces and the substrate exposed by the gap.

4. A method of making a conductive laminate structure, comprising:

forming a wiring layer on the frame area of the substrate;

forming a nano metal wire conducting layer on the adhesion promoting layer, wherein the nano metal wire conducting layer fills the opening and covers the adhesion promoting layer so as to be electrically connected with the wiring layer through the opening;

5. The method of manufacturing a conductive laminated structure according to claim 4, wherein the step of forming the adhesion promoting layer and the opening includes:

6. The method of manufacturing a conductive laminated structure according to claim 5, further comprising, after forming the first opening and before forming the second insulating layer:

coating a nano-metal wire solution in the first opening;

7. The method of manufacturing the conductive laminated structure according to claim 5 or 6, further comprising, after forming the second opening:

8. The method of manufacturing a conductive laminated structure according to claim 4, wherein the step of forming the adhesion promoting layer and the opening includes:

9. A touch panel comprising the conductive laminated structure according to any one of claims 1 to 3.