CN109031829A - Electrostatic prevention structure and display device - Google Patents
Electrostatic prevention structure and display device Download PDFInfo
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- CN109031829A CN109031829A CN201810968912.6A CN201810968912A CN109031829A CN 109031829 A CN109031829 A CN 109031829A CN 201810968912 A CN201810968912 A CN 201810968912A CN 109031829 A CN109031829 A CN 109031829A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Geometry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
This application discloses a kind of electrostatic prevention structures of display panel, comprising: one is formed in the short-circuited conducting sleeve in array substrate；Multiple electrostatic protection devices, each electrostatic protection device includes the input terminal formed by the first conduction region, the output end formed by the second conduction region and the first passage and second channel that are connected between the input terminal and the output end, the input terminal receives corresponding input signal, the output end is connected with the short-circuited conducting sleeve, the corresponding input signal is released by the first passage and/or the second channel, wherein, the multiple electrostatic protection device is divided into multiple groups, every group includes ipsilateral the first electrostatic protection device and the second electrostatic protection device for being located at the short-circuited conducting sleeve, second conduction region of first electrostatic protection device and second conduction region of second electrostatic protection device are adjacent and connected.The area that electrostatic prevention structure can be reduced improves the space utilization rate of display panel.
Description
Technical field
The present invention relates to electrostatic protection field, relate more specifically to a kind of electrostatic prevention structure and display device.
Background technique
Thin Film Transistor-LCD (Thin Film Transistor Liquid Crystal Display, TFT-
LCD) have the characteristics that small in size, low in energy consumption, manufacturing cost is relatively low and radiationless, occupied in current flat panel display market
Leading position.
In the semiconductor device, Electro-static Driven Comb (Electro-Static Discharge, ESD) is a kind of common shows
As Electro-static Driven Comb phenomenon will lead to the breakdown of dielectric, so as to cause the drift of threshold voltage or gate electrode and source, electric leakage
Short circuit between pole.Array substrate is one of important component of TFT-LCD, is easy to occur during its manufacture and use quiet
Electric release phenomenon.By taking TFT-LCD array substrate as an example, because thin film transistor (TFT) is formed on insulating substrate glass substrate, accumulation
Electrostatic charge at each electrode of thin film transistor (TFT) is easy to accumulation and forms very high voltage level.Work as accumulation of electrostatic charge
To after certain degree, the dielectric film for separate gate electrodes and source, drain electrode is possible to puncture, thus
Lead to the short circuit between source electrode and gate electrode.Even if there is no breakdown, the accumulation of electrostatic charge can also cause for dielectric
Voltage differences between gate electrode and source electrode cause the threshold voltage of thin film transistor (TFT) that drift occurs and changes thin film transistor (TFT)
Working characteristics.
Electro-static Driven Comb phenomenon damages TFT-LCD in order to prevent, short-circuited conducting sleeve can be arranged in substrate peripheral, pass through electrostatic protection
The electrostatic charge that device will build up on is distributed to each grid line or data line, so that entire panel is kept same current potential, prevents
Punch-through occurs for panel itself.
Fig. 1 shows the circuit diagram of the electrostatic prevention structure for display device of the prior art.As shown in Figure 1, data
One end of line 120 is connected with source electrode drive circuit 160, and the other end is made up of electrostatic protection device 170 and public electrode wire 130
Short-circuited conducting sleeve connection；One end of grid line 110 is connected with gate driving circuit 150, and the other end passes through electrostatic protection device 170 and public affairs
Common-battery polar curve 130 constitutes short-circuited conducting sleeve and connects (not shown).It is quiet when occurring on a grid line 110 (or data line 120)
When electric release phenomenon, electrostatic charge can be divided by the electrostatic protection device 170 connecting with grid line 110 (or data line 120)
It is scattered in the short-circuited conducting sleeve of the composition of public electrode wire 130.
Fig. 2 shows the partial structure diagrams of the electrostatic prevention structure for display device of the prior art.Static protector
Part 170 is ESD (Electro-Static Discharge) structure, and the ESD structure generally comprises multiple thin film transistor (TFT)s, is led to
The opening of thin film transistor (TFT) is crossed by the electrostatic transfer on protected circuit to dredging on line, prevents the static shock of protected circuit
It wears.Fig. 2 shows electrostatic protection device 170 include the first transistor 171 and second transistor 172.The grid of the first transistor 171
Pole is connected by the first via hole 173 with data line 120, and source electrode and the data line 120 of the first transistor 171 are connected directly, drain electrode
It is connected by the second via hole 174 with public electrode wire 130.The grid of second transistor 172 is connected with public electrode wire 130, the
The source electrode of two-transistor 172 is connected with data line 120, and drain electrode is connected by the second via hole 174 with public electrode wire 130.
Wherein, the first transistor 171 and second transistor 172 are switching tube, when the electrostatic on data line 120 is larger,
The threshold voltage being applied on the first transistor 171 is larger, and the first transistor 171 is opened in the open state, therefore data
Electrostatic on line 120 is transferred on public electrode wire 130 by the first transistor 171 and the second via hole 174.Simultaneously as second
The grid of transistor 172 is connected directly with public electrode wire 130, thus second transistor 172 be also turned on it is in the open state,
Electrostatic on data line 120 is transferred on public electrode wire 130 by second transistor 172 and the second via hole 174.Therefore data
Electrostatic on line 120 can be by rising on the first transistor 171 and second transistor 172 transmitted in both directions to public electrode wire 130
To the effect of electrostatic protection.
In the ESD protection circuit of the prior art, space shared by the ESD structure of electrostatic protection device is larger, nothing
Method meets the requirement of narrow frame design.
Summary of the invention
In view of this, being further decreased quiet the purpose of the present invention is to provide a kind of electrostatic prevention structure and display device
Narrow frame design is realized in space shared by electric protective device.
A kind of electrostatic prevention structure of the display panel provided according to an aspect of the present invention a characterized by comprising shape
At in the short-circuited conducting sleeve in array substrate；Multiple electrostatic protection devices, each electrostatic protection device include by the first conduction region
The input terminal of formation, the output end formed by the second conduction region and be connected between the input terminal and the output end
One channel and second channel, the input terminal receive corresponding input signal, and the output end is connected with the short-circuited conducting sleeve, corresponding
The input signal released by the first passage and/or the second channel, wherein the multiple electrostatic protection device
It is divided into multiple groups, every group includes ipsilateral the first electrostatic protection device and the second electrostatic protection device for being located at the short-circuited conducting sleeve, institute
Second conduction region for stating the first electrostatic protection device is adjacent with second conduction region of second electrostatic protection device
And it is connected.
Preferably, each electrostatic protection device includes the first transistor and second transistor, the first transistor
First end and control terminal be shorted and be connected to form the defeated of the electrostatic protection device with the second end of the second transistor
Enter end, the first end and control terminal of the second transistor are shorted and are connected to form institute with the second end of the first transistor
State the output end of electrostatic protection device.
Preferably, the first transistor and the second transistor are realized by thin film transistor (TFT) respectively.
Preferably, described in every group in electrostatic protection device, second conduction region of first electrostatic protection device
Gap is not present between second conduction region of second electrostatic protection device.
Preferably, the multiple groups electrostatic protection device is distributed in the one or both sides of the short-circuited conducting sleeve.
Preferably, the short-circuited conducting sleeve is formed in the first conductive layer, and described the first of each electrostatic protection device is conductive
Area and the second conduction region are formed in the second conductive layer, in the electrostatic protection device described in every group, first electrostatic protection device
Second conduction region and second conduction region of second electrostatic protection device pass through public via hole and the short circuit
Ring is connected.
Preferably, it is relatively distributed in electrostatic protection device described in two groups of the short-circuited conducting sleeve two sides and shares the public mistake
Hole.
Preferably, the short-circuited conducting sleeve extends in a first direction in first conductive layer, each static protector
First conduction region and the second conduction region of part extend in a second direction in second conductive layer, the second direction with
The first direction is vertical.
Preferably, multiple input signals corresponding with the multiple electrostatic protection device are mentioned by multiple signal ports
For the multiple signal port is along the direction arrangement parallel with the short-circuited conducting sleeve and is set to the ipsilateral of the short-circuited conducting sleeve.
A kind of display device is provided according to another aspect of the present invention, which is characterized in that including above-mentioned electrostatic prevention structure,
Wherein, the short-circuited conducting sleeve is public electrode wire, and the input signal is gate drive signal or source data signal.
In electrostatic prevention structure provided by the invention and display device, electrostatic prevention structure includes multiple being connected respectively with signal wire
Electrostatic protection device, multiple electrostatic protection devices are divided into multiple groups, and every group includes that the first ipsilateral electrostatic of short-circuited conducting sleeve is arranged in is anti-
Device and the second electrostatic protection device are protected, by by the second conduction region of the first electrostatic protection device and the second electrostatic protection device
It is adjacent and connected, reduce the spacing between the first electrostatic protection device and the second electrostatic protection device, electrostatic prevention structure can be reduced
Area, in preferred embodiment, multiple electrostatic protection devices are set in turn in the two sides of short-circuited conducting sleeve, can further subtract
The area of small electrostatic prevention structure improves the space utilization rate of display panel.
Detailed description of the invention
By referring to the drawings to the description of the embodiment of the present invention, above-mentioned and other purposes of the invention, feature and
Advantage will be apparent from.
Fig. 1 shows the circuit diagram of the electrostatic prevention structure for display device of the prior art.
Fig. 2 shows the partial structure diagrams of the electrostatic prevention structure for display device of the prior art.
Fig. 3 shows the circuit diagram of the electrostatic prevention structure for display device of first embodiment of the invention.
Fig. 4 shows the partial structure diagram of the electrostatic prevention structure for display device of first embodiment of the invention.
Fig. 5 shows the circuit diagram of the electrostatic prevention structure for display device of second embodiment of the invention.
Fig. 6 shows the partial structure diagram of the electrostatic prevention structure for display device of second embodiment of the invention.
Specific embodiment
Hereinafter reference will be made to the drawings, and the present invention will be described in more detail.In various figures, identical element is using similar attached
Icon is remembered to indicate.For the sake of clarity, the various pieces in attached drawing are not necessarily to scale.In addition, may not show in figure
Certain well known parts out.
Many specific details of the invention, such as structure, material, size, the processing work of component is described hereinafter
Skill and technology, to be more clearly understood that the present invention.But it just as the skilled person will understand, can not press
The present invention is realized according to these specific details.
It should be appreciated that being known as being located at another floor, another area when by a floor, a region when describing the structure of component
When domain " above " or " top ", can refer to above another layer, another region, or its with another layer, it is another
Also comprising other layers or region between a region.Also, if by part turnover, this layer, a region will be located at it is another
Layer, another region " following " or " lower section ".
Fig. 3 shows the circuit diagram of the electrostatic prevention structure for display device of first embodiment of the invention.
As shown in figure 3, the electrostatic prevention structure of first embodiment of the invention include the short-circuited conducting sleeve 220 being disposed on the substrate and
Multiple electrostatic protection devices 230.Each electrostatic protection device 230 includes the input terminal of the first conduction region 21 composition, second
The first passage and second channel between output end and input terminal and output end that conduction region 22 is constituted, electrostatic protection device
230 are connected by input terminal with signal wire to receive corresponding input signal, are connect, are inputted with short-circuited conducting sleeve 220 by output end
Signal is released by first passage and/or second channel.As shown in figure 3, the electrostatic prevention structure of first embodiment of the invention is used
In display device, multiple electrostatic protection devices 230 are set to the same side of short-circuited conducting sleeve 220, the first end and source electrode of data line 210
Driving circuit 270 is connected, and second end is connected by electrostatic protection device 230 and short-circuited conducting sleeve 220.In addition, multiple static protectors
Part 230 divides for multiple groups, every group include positioned at short-circuited conducting sleeve 220 ipsilateral the first electrostatic protection device 230-1 and the second electrostatic it is anti-
Protect device 230-2, the second conduction region 22 of the first electrostatic protection device 230-1 and the second conduction of the second protective device 230-2
Area 22 is adjacent and connected.Certainly, the position of the electrostatic protection device 230 on data line 210 is only shown in figure, it should be noted that
Electrostatic protection device 230 equally can be set on grid line 250, in other embodiments of the invention, the first of grid line 250
End is connected with gate driving circuit 260, and second end is connected by electrostatic protection device 230 and short-circuited conducting sleeve 220.
In addition, in some embodiments of the invention, in the first end of data line 210 (grid line 250), i.e., being driven with source electrode
The connected one end of dynamic circuit 270 (gate driving circuit 260), can also be connected by electrostatic protection device 230 and short-circuited conducting sleeve 220
It connects.
Fig. 4 shows the partial structure diagram of the electrostatic prevention structure for display device of first embodiment of the invention.
As shown in figure 4, electrostatic prevention structure 200 includes the multiple electrostatic protection devices 230 being connected with signal wire, pass through electrostatic
Electrostatic charge on protected circuit is transferred on short-circuited conducting sleeve by the conducting of protective device 230, to prevent protected circuit from sending out
Raw electrostatic breakdown.Wherein, the signal wire in the present embodiment includes grid line and/or data line, and short-circuited conducting sleeve is, for example, public electrode
Line is illustrated by data line of signal wire below.
As shown in figure 4, the first electrostatic protection device 230-1 is connected to data line 210-1 and short-circuited conducting sleeve 220, the second electrostatic
Protective device 230-2 is connected to data line 210-2 and short-circuited conducting sleeve 220.Data line 210-1 and data line 210-2 have respectively to
First electrostatic protection device 230-1 and the second electrostatic protection device 230-2 provides the signal port of input signal, multiple signal ends
Opening's edge the direction parallel with short-circuited conducting sleeve 220 arrange and be set to the ipsilateral of short-circuited conducting sleeve.
The structure of multiple electrostatic protection devices 230 is identical, is double tft structure, as shown in figure 4, static protector
In part 230, the source electrode 231 of first thin film transistor (TFT) passes through the gate electrode of the first via hole 241 and first thin film transistor (TFT)
234 connections, while connects with the drain electrode of second thin film transistor (TFT) 233, the input terminal of formation electrostatic protection device 230-1 the
One conduction region 21, the first conduction region 21 are connect with the signal port of data line 210-1 to receive input signal.Second film crystalline substance
The source electrode 235 of body pipe and the gate electrode 236 of second thin film transistor (TFT) are connect by the second via hole 242, at the same with first
The drain electrode 232 of thin film transistor (TFT) connects, and forms the second conduction region of output end 22 of electrostatic protection device 230-1.
Wherein, short-circuited conducting sleeve 220 is formed in the first conductive layer, and along first direction (such as in Fig. 4 in the first conductive layer
Transverse direction) extend.First conduction region 21 and the second conduction region 22 are formed in the second conductive layer, and along in the second conductive layer
Two directions (such as longitudinal direction in Fig. 4) extend.As shown in figure 4, the extending direction of short-circuited conducting sleeve 220 and the first conduction region 21 and
The extending direction of second conduction region 22 is vertical.In addition, the second conductive layer is located above the first conductive layer, the second conduction region 22 passes through
Via hole is connect with short-circuited conducting sleeve 220.
As shown in figure 4, the first electrostatic protection device 230-1 and the second electrostatic protection device 230-2 are disposed adjacent, and all
Positioned at the top of short-circuited conducting sleeve 220, while the second conduction region 22 and the second electrostatic protection device of the first electrostatic protection device 230-1
The second conduction region 22 of 230-2 is adjacent and connected.Preferably, the second conduction region 22 of the first electrostatic protection device 230-1 and
Gap is not present between the second conduction region 22 of two electrostatic protection device 230-2.In addition, the first electrostatic protection device 230-2
The second conduction region 22 of second conduction region 22 and the second electrostatic protection device 230-1 all pass through public via hole (such as the in Fig. 4
Two via holes 242) it is connect with short-circuited conducting sleeve 220.
In addition, electrostatic prevention structure 200 further includes ITO (Indium Tin Oxides, nano indium tin metal oxide) layer
(not shown), ITO layer be located at the top of the second conductive layer and pass through third via hole 243 and electrostatic protection device 230 the
The gate electrode connection of one thin film transistor (TFT), ITO layer are connect by the 4th via hole 244 with short-circuited conducting sleeve 220.
Wherein, Fig. 4 shows the electrostatic protection device 230 of the thin film transistor (TFT) using the cross structure of falling grid, but this hair
It is bright to be not limited thereto system, in embodiments of the invention other, use that source, leakage, that three electrode of grid is located at semiconductor layer is same
The planar structure of side, such as source, leakage, three electrode of grid are located at the positive grid planar structure on the upside of semiconductor layer, Huo Zheyuan, leakage, grid three
Electrode is located at the planar structure of falling grid on the downside of semiconductor layer.In other embodiments of the invention, electrostatic discharge protector 230
The thin film transistor (TFT) used is located on the upside of semiconductor layer for gate electrode, and the positive grid that source, drain electrode are located on the downside of semiconductor layer interlock
Structure, those skilled in the art can select the structure of thin film transistor (TFT) as the case may be.
It is anti-by the electrostatic on adjacent data line 210 in the electrostatic prevention structure 200 that first embodiment of the invention provides
It protects device 230 and shares the second conduction region 22 and public via hole, such as connect in Fig. 4 with data line 210-1 and data line 210-2
Electrostatic protection device 230-1 and electrostatic protection device 230-2 shares the second conduction region 22 and public via hole, reduces antistatic knot
The area of structure 200 is conducive to the area utilization for improving display panel.
Multiple electrostatic protection devices 230 are set to common electrical by the electrostatic prevention structure 200 that first embodiment of the invention provides
Polar curve it is ipsilateral, such as upside or downside, space utilization rate is low, cause very large space to waste, in view of this, the present invention provide
Preferred embodiment, the problem low to ESD protection circuit space utilization rate are improved.
Fig. 5 shows the circuit diagram of the electrostatic prevention structure for display device of second embodiment of the invention.
As shown in figure 5, multiple electrostatic protection devices 330 are arranged in the electrostatic prevention structure 300 of second embodiment of the invention
First end in the two sides of short-circuited conducting sleeve 320, such as data line 310 is connected with source electrode drive circuit 370, and second end passes through multiple quiet
Electric protective device 330 is connect with short-circuited conducting sleeve 320, and plurality of electrostatic protection device 330 is set in turn in the upper and lower of short-circuited conducting sleeve 320
Two sides；Meanwhile in other embodiments of the present invention, the first end of grid line 350 and gate driving circuit 360, second end passes through
Multiple electrostatic protection devices 330 are connect with short-circuited conducting sleeve 320, wherein multiple electrostatic protection devices 330 are set in turn in short-circuited conducting sleeve
The left and right sides.
In addition, in some embodiments of the invention, in the first end of data line 310 (grid line 350), i.e., being driven with source electrode
The connected one end of dynamic circuit 370 (gate driving circuit 360), can in the same way by electrostatic protection device 330 with it is short
Road ring 320 connects.
Fig. 6 shows the partial structure diagram of the electrostatic prevention structure for display device of second embodiment of the invention.
As shown in fig. 6, the first electrostatic protection device 330-1, the second electrostatic protection device 330-2, third static protector
Part 330-3 and the 4th electrostatic protection device 330-4 is respectively arranged at the two sides up and down of short-circuited conducting sleeve 320, the first static protector
Part 330-1 connection data line 310-1 and short-circuited conducting sleeve 320；Second electrostatic protection device 330-2 connection data line 310-4 and short circuit
Ring 320；Third electrostatic protection device 330-3 connection data line 310-2 and short-circuited conducting sleeve 320；4th electrostatic protection device 330-4 connects
Meet data line 310-3 and short-circuited conducting sleeve 320.Wherein, the first electrostatic protection device 330-1 and the second electrostatic protection device 330-2 are set
It is placed in the upper surface of short-circuited conducting sleeve 320；Third electrostatic protection device 330-3 and the 4th electrostatic protection device 330-4 are set to short-circuited conducting sleeve
Below 320.Preferably, the first electrostatic protection device 330-1, the second electrostatic protection device 330-2, third electrostatic protection device
330-3 and the 4th electrostatic protection device 330-4 passes through public via hole (such as second via hole 342 in Fig. 6) and short-circuited conducting sleeve
320 connections.
In addition, electrostatic protection device 330-1, electrostatic protection device 330-2, electrostatic protection device 330-3 and electrostatic are anti-
The connection relationship of the structure and itself and data line 310 and short-circuited conducting sleeve 320 of protecting device 330-4 is identical with Fig. 4, no longer goes to live in the household of one's in-laws on getting married herein
It states.
Multiple electrostatic protection devices 330 in electrostatic prevention structure 300 that second embodiment of the invention provides are set in turn in
The two sides of short-circuited conducting sleeve 320 can further reduce the area of electrostatic prevention structure, improve the space utilization rate of display panel.
According to another aspect of the present invention, a kind of display device is provided, wherein the display device includes above-mentioned antistatic
Structure, and above-mentioned short-circuited conducting sleeve is public electrode wire, and input signal is gate drive signal or source data signal.
In conclusion in electrostatic prevention structure provided by the invention and display device, electrostatic prevention structure include it is multiple respectively with
The connected electrostatic protection device of signal wire, multiple electrostatic protection devices are divided into multiple groups, and every group includes that short-circuited conducting sleeve is arranged in is ipsilateral
First electrostatic protection device and the second electrostatic protection device, by by the first electrostatic protection device and the second electrostatic protection device
Second conduction region is adjacent and connected, reduces the spacing between the first electrostatic protection device and the second electrostatic protection device, can reduce
The area of electrostatic prevention structure, in preferred embodiment, multiple electrostatic protection devices are set in turn in the two sides of short-circuited conducting sleeve, can be with
The further area for reducing electrostatic prevention structure, improves the space utilization rate of display panel.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
It is as described above according to the embodiment of the present invention, these embodiments details all there is no detailed descriptionthe, also not
Limiting the invention is only the specific embodiment.Obviously, as described above, can make many modifications and variations.This explanation
These embodiments are chosen and specifically described to book, is principle and practical application in order to better explain the present invention, thus belonging to making
Technical field technical staff can be used using modification of the invention and on the basis of the present invention well.The present invention is only by right
The limitation of claim and its full scope and equivalent.
Claims (10)
1. a kind of electrostatic prevention structure of display panel characterized by comprising
One is formed in the short-circuited conducting sleeve in array substrate；
Multiple electrostatic protection devices, each electrostatic protection device includes the input terminal formed by the first conduction region, by second
The output end that conduction region is formed and the first passage and second channel being connected between the input terminal and the output end, institute
It states input terminal and receives corresponding input signal, the output end is connected with the short-circuited conducting sleeve, and the corresponding input signal passes through
The first passage and/or the second channel are released,
Wherein, the multiple electrostatic protection device is divided into multiple groups, and every group includes the first ipsilateral electrostatic for being located at the short-circuited conducting sleeve
Protective device and the second electrostatic protection device, second conduction region and second electrostatic of first electrostatic protection device
Second conduction region of protective device is adjacent and connected.
2. electrostatic prevention structure according to claim 1, which is characterized in that each electrostatic protection device includes first brilliant
Body pipe and second transistor, the first end and control terminal of the first transistor are shorted and the second end with the second transistor
Be connected to form the input terminal of the electrostatic protection device, the first end of the second transistor be shorted with control terminal and with it is described
The second end of the first transistor is connected to form the output end of the electrostatic protection device.
3. electrostatic prevention structure according to claim 2, which is characterized in that the first transistor and the second transistor
It is realized respectively by thin film transistor (TFT).
4. electrostatic prevention structure according to claim 1, which is characterized in that in the electrostatic protection device described in every group,
Second conduction region of first electrostatic protection device and second conduction of second electrostatic protection device
Gap is not present between area.
5. electrostatic prevention structure according to claim 1, which is characterized in that the multiple groups electrostatic protection device is distributed in described
The one or both sides of short-circuited conducting sleeve.
6. electrostatic prevention structure according to claim 5, which is characterized in that the short-circuited conducting sleeve is formed in the first conductive layer, often
First conduction region of a electrostatic protection device and the second conduction region are formed in the second conductive layer, the electrostatic described in every group
In protective device,
Second conduction region of first electrostatic protection device and second conduction of second electrostatic protection device
Area is connected by public via hole with the short-circuited conducting sleeve.
7. electrostatic prevention structure according to claim 6, which is characterized in that be relatively distributed in the two of the short-circuited conducting sleeve two sides
The group electrostatic protection device shares the public via hole.
8. electrostatic prevention structure according to claim 6, which is characterized in that short-circuited conducting sleeve edge in first conductive layer
First direction extends, and first conduction region and the second conduction region of each electrostatic protection device are in second conductive layer
Inside extend in a second direction, the second direction is vertical with the first direction.
9. electrostatic prevention structure according to claim 5, which is characterized in that corresponding with the multiple electrostatic protection device more
A input signal is provided by multiple signal ports, and the multiple signal port is arranged along the direction parallel with the short-circuited conducting sleeve
And it is set to the ipsilateral of the short-circuited conducting sleeve.
10. a kind of display device, which is characterized in that including electrostatic prevention structure as described in any one of claim 1 to 9, wherein
The short-circuited conducting sleeve is public electrode wire, and the input signal is gate drive signal or source data signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810968912.6A CN109031829B (en) | 2018-08-23 | 2018-08-23 | Anti-static structure and display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810968912.6A CN109031829B (en) | 2018-08-23 | 2018-08-23 | Anti-static structure and display device |
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| CN109031829A true CN109031829A (en) | 2018-12-18 |
| CN109031829B CN109031829B (en) | 2022-06-14 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN110969934A (en) * | 2019-12-16 | 2020-04-07 | 京东方科技集团股份有限公司 | Array substrate and display panel |
| CN110969934B (en) * | 2019-12-16 | 2021-12-07 | 京东方科技集团股份有限公司 | Array substrate and display panel |
| CN111243429A (en) * | 2020-02-13 | 2020-06-05 | 京东方科技集团股份有限公司 | Display panel and display device |
| CN111243429B (en) * | 2020-02-13 | 2021-11-09 | 京东方科技集团股份有限公司 | Display panel and display device |
| US11570877B2 (en) | 2020-02-13 | 2023-01-31 | Boe Technology Group Co., Ltd. | Display panel and display apparatus |
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| Publication number | Publication date |
|---|---|
| CN109031829B (en) | 2022-06-14 |
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