CN109022792A - The processing method of target to be processed - Google Patents

The processing method of target to be processed Download PDF

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Publication number
CN109022792A
CN109022792A CN201710426729.9A CN201710426729A CN109022792A CN 109022792 A CN109022792 A CN 109022792A CN 201710426729 A CN201710426729 A CN 201710426729A CN 109022792 A CN109022792 A CN 109022792A
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target
processed
processing method
acid solution
processing
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CN109022792B (en
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吴景晖
姚力军
钟翔
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NINGBO CHAMPION NEW MATERIALS Co Ltd
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NINGBO CHAMPION NEW MATERIALS Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B7/00—Working up raw materials other than ores, e.g. scrap, to produce non-ferrous metals and compounds thereof; Methods of a general interest or applied to the winning of more than two metals
    • C22B7/001—Dry processes
    • C22B7/003—Dry processes only remelting, e.g. of chips, borings, turnings; apparatus used therefor
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B34/00—Obtaining refractory metals
    • C22B34/10—Obtaining titanium, zirconium or hafnium
    • C22B34/12—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08
    • C22B34/1295—Refining, melting, remelting, working up of titanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/10—Other heavy metals
    • C23G1/106—Other heavy metals refractory metals
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00—Technologies related to metal processing
    • Y02P10/20—Recycling

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Geology (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)

Abstract

The present invention provides a kind of processing method of target to be processed, comprising: provides target to be processed；The first pickling processes are carried out to the target to be processed by the first acid solution, form initial target, first acid solution and the target to be processed occur the first chemical reaction, remove some materials of target material surface to be processed；The second pickling processes are carried out to the initial target by the second acid solution, second chemical reaction occurs for second acid solution and the initial target, remove some materials of initial target material surface, the rate that the rate of second chemical reaction is chemically reacted less than first.The processing method can be improved the rate of recovery of target to be processed.

Description

The processing method of target to be processed
Technical field
The present invention relates to semiconductor sputtering target manufacturing field more particularly to a kind of processing methods of target to be processed.
Background technique
Target is also referred to as sputtering target material, it is existed by magnetron sputtering, multi-arc ion coating or other kinds of coating system The sputtering source for forming various function films is sputtered on substrate under appropriate process conditions.Briefly, target is exactly high speed lotus Can particle bombardment target material, in high energy laser weapon, different capacity density, different output waveforms, different wave length When laser interacts from different targets, different killing damage effects can be generated.Replace different targets (such as aluminium, copper, no Become rusty steel, titanium, nickel target etc.), different membrane systems (such as superhard, wear-resisting, corrosion-resistant alloy film) can be obtained.Sputtering target material is generally right Material requirements is relatively high, and the high purity titanium that titanium sputtering target material needs to reach using purity 4N (99.99%) or more is that raw material just may be used To be made.
Target is taken as after sputtering source used, and the only sub-fraction of sputter vaporization, most of material is still in target On material matrix, this some materials is waste and old reason target, these waste and old target chinese raw materialies are titanium, referred to as waste and old titanium Target.
Titanium and its alloy have the advantages that high specific gravity intensity and corrosion-resistant strong, and product is widely used in Aeronautics and Astronautics neck In domain and shipbuilding, atomic energy industry.In daily life and consumer product area, the application of titanium or titanium alloy also causes sizable emerging Interest；But due to titanium article higher cost, extensive use is restricted.The recovery utilization rate for improving waste and old titanium target material can have Effect reduces the cost of titanium article, increases the application of titanium article.
However, the prior art is very low to the rate of recovery of waste and old target.
Summary of the invention
Problems solved by the invention is to provide a kind of processing method of target to be processed, can be improved returning for target to be processed Yield.
To solve the above problems, the present invention provides a kind of processing method of target to be processed, comprising: provide target to be processed Material；The first pickling processes are carried out to the target to be processed by the first acid solution, form initial target, first acid solution The first chemical reaction occurs with the target material surface material to be processed, removes some materials of target material surface to be processed；Pass through Diacid solution carries out the second pickling processes to the initial target, forms purification target, second acid solution and described initial Second chemical reaction occurs for target material surface material, removes some materials of initial target material surface, the speed of second chemical reaction Rate of the rate less than the first chemical reaction.
Optionally, the material of the target to be processed is titanium.
Optionally, first acid solution includes HF.
Optionally, first acid solution further includes HCl.
Optionally, the concentration of HCl is 5%~7% in first acid solution, HCl and HF in first acid solution Mass values are 4.5~5.5.
The processing method of target to be processed as claimed in claim 4, which is characterized in that first pickling processes when Between be 27min~33min.
Optionally, second acid solution includes HF.
Optionally, second acid solution further includes HNO3。
Optionally, HNO in second acid solution3Concentration be 25%~35%；HNO in second acid solution3With HF Mass values be 4.5~5.5.
Optionally, the time of second pickling processes is 1.8h~2.2h；The temperature of second acid solution is 45 DEG C ~50 DEG C.
Optionally, before first pickling processes, further includes: by acid deoiling agent solution to the target to be processed Carry out decontamination processing.
Optionally, the concentration of acid deoiling agent is 10%~20% in the acid deoiling agent solution.
Optionally, the volume ratio of the acid deoiling agent solution and the target to be processed is 1.8~2.2.
Optionally, before first pickling processes, further includes: carry out scrub processing to the target material surface to be processed.
It optionally, further include that the first cleaning is carried out to the target to be processed by the first cleaning agent after scrub processing Processing, first cleaning agent are water.
Optionally, further includes: the second cleaning treatment is carried out to the purification target by the second cleaning agent, described second is clear Lotion is water.
It optionally, further include that drying and processing is carried out to the purification target after second cleaning treatment.
Optionally, drying and processing, the parameter packet of the drying and processing are carried out to the purification target by vacuum oven Include: the vacuum degree in the vacuum oven is greater than 100Pa, and drying temperature is 120 DEG C~150 DEG C, and drying time is 1h~2h.
Optionally, further includes: melting processing is carried out to the purification target.
Optionally, melting processing is carried out to the purification target by electron beam cold hearth vacuum melting furnace.
Compared with prior art, technical solution of the present invention has the advantage that
In the processing method for the target to be processed that technical solution of the present invention provides, by the first acid solution to described to be processed Target carries out the first pickling processes.First acid solution and the target to be processed occur first and chemically react, and described first Chemical reaction can remove some materials of the target material surface to be processed, inhale so as to remove the target material surface to be processed Attached foreign atom improves the purity of the target to be processed.Second is carried out to the target to be processed by the second acid solution Second chemical reaction occurs for pickling processes, second acid solution and the target to be processed.Second chemical reaction velocity Less than the speed of first chemical reaction, it can be improved the brightness of the purification target material surface, reduce the purification target The roughness on surface, so as to reduce target to be processed to the adsorbance of foreign atom, so as to improve target to be processed Recovery utilization rate.
Further, first acid solution includes HCl and HF.HCl can be improved the speed of the first pickling processes, to mention The recovery efficiency of high target to be processed.
Further, second acid solution includes HF and HNO3, HNO3It can make the target material surface passivation to be processed, drop The speed of low second pickling processes keeps target material surface to be processed bright, reduces target to be processed to the adsorption capacity of foreign atom. HNO3The hydrogen-sucking amount that target to be processed during the second pickling processes can also be reduced, improves the recycling of target to be processed Rate.
Further, decontamination processing is carried out to the target to be processed by acid deoiling agent solution, can remove it is described to The impurity such as the greasy dirt of target material surface are handled, the purity of the target to be processed is improved.
Further, after second pickling processes, further includes: carry out melting processing to the target to be processed.It is described Melting processing can remove the impurity in the target to be processed, and can carry out moulding again to the target to be processed.
Detailed description of the invention
Fig. 1 is the flow chart of each step of one embodiment of processing method of waste and old titanium target material of the invention；
Fig. 2 to Fig. 5 is the structural schematic diagram of each step of one embodiment of processing method of waste and old titanium target material of the invention.
Specific embodiment
The prior art is very low to the recovery utilization rate of target to be processed.
Now in conjunction with the processing method of waste and old titanium target material, the very low reason of the recovery utilization rate of target to be processed is analyzed:
There are mainly two types of waste and old titanium target material processing modes: one is be taken as useless titanium material to undersell；Another kind is to pass through Machining cuts part titanium plate or titanium grain from waste and old titanium target material.
The first processing method does not re-use titanium target material, so as to cause the waste of titanium material.Second of processing side Although method makes waste and old titanium target material obtain simple recycling, but since titanium target material is after sputtering, surface due to by The bombardment of energetic ion and become coarse, it is stronger to the suction-operated of impurity.In addition, since titanium target material is formed after sputtering Waste and old titanium target material surface temperature it is higher be easy with the external world impurity react, cause titanium target material purity lower.Therefore, described The titanium material that can satisfy purity requirement in waste and old titanium target material is less.When being machined to the waste and old titanium target material, greatly Titanium material is measured to be removed, it is very low so as to cause the recovery utilization rate of titanium.
To solve the technical problem, the present invention provides a kind of processing methods of target to be processed, comprising: passes through first Acid solution carries out the first pickling processes to the target to be processed；After first pickling processes, pass through the second acid solution pair The target to be processed carries out second pickling processes.Wherein, the first pickling processes can remove in the target to be processed The impurity such as oxide, to improve the purity of the target to be processed.Second pickling processes can be described to be processed Target material surface forms fine and close protective layer, reduces target to be processed to the adsorption capacity of foreign atom, and then can be improved wait locate Manage the recovery utilization rate of target.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention Specific embodiment be described in detail.
Fig. 1 is the flow chart of each step of one embodiment of processing method of target to be processed of the invention.
Referring to FIG. 1, the processing method of the target to be processed includes:
S1: target to be processed is provided；
S2: decontamination processing is carried out to the target to be processed by acid deoiling agent solution；
S3: after decontamination processing, scrub processing is carried out to the target material surface to be processed；
S4 carries out the first pickling processes to the target to be processed by the first acid solution, forms initial target, and described the First chemical reaction occurs for one acid solution and the target material surface material to be processed, removes the part material of target material surface to be processed Material；
S5 carries out the second pickling processes to the initial target by the second acid solution, is formed and purify target, and described second Second chemical reaction occurs for acid solution and the initial target surfacing, removes some materials of initial target material surface, described Rate of the rate of second chemical reaction less than the first chemical reaction；
S6 carries out melting processing to the purification target.
Fig. 2 to Fig. 5 is the structural schematic diagram of each step of one embodiment of processing method of present invention target to be processed.It ties below Attached drawing is closed to be described in detail.
Referring to FIG. 2, executing step S1, target 100 to be processed is provided.
The target to be processed 100 is the remaining target after sputtering.
For target after sputtering, surface becomes coarse due to the bombardment by energetic ion, and surface has pit-hole, leads It causes used in the absorption to impurity relatively by force, so that the target to be processed can adsorb the foreign atoms such as a large amount of carbon, hydrogen, oxygen and nitrogen, 100 surface of target to be processed also has the impurity such as a large amount of greasy dirt and iron.It is formed after sputtering additionally, due to target 100 surface temperature of target to be processed it is higher, be easy a large amount of foreign atom of absorption, especially form oxide layer on surface.Separately Outside, the target to be processed 100 makes the target material surface to be processed have scratch, institute during carrying, storing due to colliding with It states and is easy accumulated impurity in scratch.
In the present embodiment, the material of the target 100 to be processed is titanium.The target to be processed 100 is waste and old titanium target material.
With continued reference to FIG. 2, executing step S2, the target 100 to be processed is carried out by acid deoiling agent solution 101 Decontamination processing.
The decontamination processing is used to remove the greasy dirt on 100 surface of target to be processed.
If the content of acid deoiling agent is too low in the acid deoiling agent solution 101, it is unfavorable for removing described to be processed The greasy dirt on 100 surface of target；If the too high levels of acid deoiling agent in the acid deoiling agent solution 101, be easy increase at This.Specifically, the concentration of acid deoiling agent is 10%~20% in the acid deoiling agent solution 101 in the present embodiment.
If the volume ratio of the acid deoiling agent solution 101 and the target 100 to be processed is too small, it is unfavorable for removing The greasy dirt on 100 surface of target to be processed；If the body of the acid deoiling agent solution 101 and the target 100 to be processed Product ratio is excessive, is easy to increase the waste of acid deoiling agent solution 101.Specifically, the acid deoiling agent solution 101 with it is described The volume ratio of target 100 to be processed is 1.8~2.2, and in the present embodiment, the acid deoiling agent solution 101 is with described wait locate The volume ratio for managing target 100 is 2.
Referring to FIG. 3, executing step S3, after cleaning, scrub processing is carried out to 100 surface of target to be processed.
It is described rinse processing it is miscellaneous for removing greasy dirt, iron filings in the 100 surface pit-hole of target to be processed and scratch etc. Matter.
Scrub processing is carried out to 100 surface of target to be processed by hairbrush 102.
In the scrub treatment process, operator needs band rubber acid-proof gloves, prevents 100 table of target to be processed The skin of acid deoiling agent solution 101 (as shown in Figure 2) the etching operation person in face.
After the scrub processing, further includes: carry out the first cleaning to the target 100 to be processed by the first cleaning agent Processing.
First cleaning treatment is used to remove the acid deoiling agent solution 101 on 100 surface of target to be processed.
In the present embodiment, first cleaning agent is water.
Referring to FIG. 4, step S4 is executed, by the first acid solution 103 to the target 100 (as shown in Figure 3) to be processed The first pickling processes are carried out, initial target 110 is formed, first acid solution 103 is sent out with the target material surface material to be processed Raw first chemical reaction, removes some materials on 100 surface of target to be processed.
First chemical reaction can remove some materials on 100 surface of target to be processed, so as to remove The foreign atom of 100 adsorption of target to be processed improves the purity of the target 100 to be processed.
In the present embodiment, first pickling processes can be also used for removing the oxidation on 100 surface of target to be processed Layer.
In the present embodiment, after the scrub processing, the first pickling processes are carried out to the target 100 to be processed.
In the present embodiment, first acid solution 103 includes HCl and HF.In other embodiments, first acid solution It only include HF.
HCl, which is added, in the present embodiment, in HF can increase reacting for the first acid solution 103 and titanium, so as to the first change The reaction rate of reaction is learned, production efficiency is improved；However, HCl is easy target 100 to be processed during the first pickling processes of increase Hydrogen-absorbing ability.
It is to be processed during the first pickling processes of easy increase if the excessive concentration of HCl in first acid solution 103 The hydrogen-absorbing ability of target 100 reduces the purity of initial target 110 after the first pickling processes；If in first acid solution 103 The concentration of HCl is too low, is easily reduced formation efficiency.Specifically, the concentration of HCl is 5%~7% in first acid solution 103.
Under conditions of the concentration of HCl is certain in first acid solution 103, if HCl in first acid solution 103 Too small with the mass values of HF, the concentration of HF is larger in the first acid solution 103, is easy to increase the loss of titanium；If described first The mass values of HCl and HF are excessive in acid solution 103, and the concentration for stating HF in the first acid solution 103 is smaller, are easily reduced production effect Rate.Specifically, the mass values of HCl and HF are 4.5~5.5, such as 5 in first acid solution 103 in the present embodiment.
If the time of first pickling processes is too short, it is unfavorable for removing the impurity that the target to be processed 100 adsorbs Atom；If the overlong time of first pickling processes, it is easy to increase the loss of titanium in target 100 to be processed.Specifically, this In embodiment, the time of first pickling processes is 27min~33min.
Referring to FIG. 5, by the second acid solution 104 to second pickling of the initial progress (as shown in Figure 4) of target 110 at Reason, forms purification target 120, and second acid solution 104 and initial 110 surfacing of target generation, second chemistry are anti- It answers, removes some materials on initial 110 surface of target, the speed that the rate of second chemical reaction is chemically reacted less than first Rate.
Second chemical reaction velocity is less than the speed of first chemical reaction, can be improved the purification target The brightness on 110 surfaces reduces the roughness on purification 110 surface of target, so as to reduce target to be processed 110 to miscellaneous The adsorbance of matter atom, so as to improve the recovery utilization rate of target 100 to be processed.
In the present embodiment, second acid solution 104 includes HNO3And HF.HF can with except the initial target 110 it is anti- It answers.HNO is added in HF3It can make 110 surface passivation of initial target, make 120 surface-brightening of purification target, so as to Enough purification targets 120 that reduces improve the pure of titanium in purification target 120 to the adsorption capacity of the foreign atoms such as carbon, hydrogen, oxygen and nitrogen Degree.In addition, HNO is added in HF3The reaction rate that can reduce the second acid solution 104 with initial old target 110, to make to purify 120 surface-brightening of target, and loss of the HF to titanium in purification target 120 can be reduced.
HNO is added in HF3It can also reduce during second pickling processes, the suction Hydrogen Energy of target 100 to be processed Power improves the recovery utilization rate of target to be processed.Its reaction mechanism are as follows:
3Ti+4HNO3+ 12HF=3TiF4+8H2O+4NO
If HNO in second acid solution 1043Concentration it is too low, be unfavorable for reducing the second pickling processes process In initial target 110 hydrogen-sucking amount.Therefore, HNO in second acid solution 1043Concentration it is unsuitable too small, second acid is molten HNO in liquid 1043Concentration be greater than 20%.Specifically, in the present embodiment, HNO in second acid solution 1043Concentration be 25%~35%.
HNO in second acid solution 1043Concentration it is certain under conditions of, if HNO in second acid solution 1043 Excessive with the mass values of HF, the concentration of HF is too low, is unfavorable for removing the foreign atom that the initial target 110 adsorbs；If HNO in second acid solution 1043Too small with the mass values of HF, the excessive concentration of HF is easy to produce waste of material.Specifically , in the present embodiment, HNO in second acid solution 1043Mass values with HF are 4.5~5.5, such as 5.
If the temperature of second acid solution 104 is excessively high, it is easy to cause the rate of second pickling processes too fast, from And it is unfavorable for making 100 surface-brightening of target to be processed, and be easy to increase loss of the HF to titanium in initial target 110；If described The temperature of second acid solution 104 is too low, is easy to keep the rate of second pickling processes excessively slow, to reduce production efficiency.Tool Body, in the present embodiment, the temperature of the second acid solution 104 is 45 DEG C~50 DEG C.
If the overlong time of second pickling processes, it is easy to increase loss of the HF to titanium in initial target 110；If The time of second pickling processes is too short, is unfavorable for removing the foreign atom that the initial target 110 adsorbs, is unfavorable for purifying The light on 120 surface of target.Specifically, the time of second pickling processes is 1.8h~2.2h in the present embodiment.
After second pickling processes, further includes: it is clear to carry out second to the purification target 120 by the second cleaning agent Wash processing.
Second cleaning treatment is used to remove first acid solution and the second acid solution on purification 120 surface of target.
In the present embodiment, second cleaning agent is water.
It further include that drying and processing is carried out to the purification target 120 after second cleaning treatment.
The drying and processing is for removing second cleaning agent, to inhibit to purify target described in the dioxygen oxidation in air Material 120.
In the present embodiment, the purification target 120 is dried by vacuum oven.
If the vacuum degree in the vacuum oven is too small, 120 surface of purification target is oxidized easily.Therefore, In the present embodiment, the vacuum degree in the vacuum oven is greater than 100Pa.
If drying temperature is too low, it is easily reduced the efficiency of drying and processing；If the excessively high easy increase energy of drying temperature Waste.Specifically, the drying temperature is 120 DEG C~150 DEG C.
If drying time is too short, it is not easy to make to purify the sufficiently drying of target 120, to be easy to make to purify 120 quilt of target Oxidation；If drying time is too long, it is easily reduced production efficiency.Specifically, drying time is 1h~2h in the present embodiment.
After the drying and processing, further includes: the purification target 120 is made to be cooled to taking-out temperature with vacuum oven； It is cooled to after taking-out temperature, takes out the purification target 120.
If the taking-out temperature is excessively high, after taking out the purification target 120, the easy absorption carbon of purification target 120, The atoms such as hydrogen, oxygen, nitrogen reduce so as to cause purification 120 purity of target, and therefore, the taking-out temperature is less than 30 degree, cooling time For 3h~5h.
Step S6 is executed, after second pickling processes, to the purification target 120 progress melting processing.
The melting processing can further remove the impurity in the purification target 120, and can be to the purification target Material 120 carries out moulding again.
In the present embodiment, after the drying and processing, melting processing is carried out to the purification target 120.
Melting processing is carried out to the purification target 120 by electron beam cold hearth vacuum melting furnace.Electron beam cold hearth vacuum Vacuum degree is higher in smelting furnace, can reduce absorption of the purification target 120 to foreign atom.Electron beam cold hearth vacuum melting simultaneously Furnace can remove density in purification target 120 and be greater than titanium density and the impurity less than titanium density, to have to titanium good Refining effect.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute Subject to the range of restriction.

Claims (20)

1. a kind of processing method of target to be processed characterized by comprising
Target to be processed is provided；
The first pickling processes are carried out to the target to be processed by the first acid solution, form initial target, first acid is molten First chemical reaction occurs for liquid and the target material surface material to be processed, removes some materials of target material surface to be processed；
The second pickling processes are carried out to the initial target by the second acid solution, form purification target, second acid solution The second chemical reaction occurs with the initial target surfacing, removes some materials of initial target material surface, described second changes Learn rate of the rate less than the first chemical reaction of reaction.
2. the processing method of target to be processed as described in claim 1, which is characterized in that the material of the target to be processed is Titanium.
3. the processing method of target to be processed as claimed in claim 1 or 2, which is characterized in that first acid solution includes HF。
4. the processing method of target to be processed as claimed in claim 3, which is characterized in that first acid solution further includes HCl。
5. the processing method for the target to be processed stated as claimed in claim 4, which is characterized in that HCl in first acid solution Concentration be 5%~7%, the mass values of HCl and HF are 4.5~5.5 in first acid solution.
6. the processing method of target to be processed as claimed in claim 4, which is characterized in that the time of first pickling processes For 27min~33min.
7. the processing method of target to be processed as claimed in claim 1 or 2, which is characterized in that second acid solution includes HF。
8. the processing method of target to be processed as claimed in claim 7, which is characterized in that second acid solution further includes HNO3。
9. the processing method of target to be processed as claimed in claim 8, which is characterized in that HNO in second acid solution3's Concentration is 25%~35%；HNO in second acid solution3Mass values with HF are 4.5~5.5.
10. the processing method of target to be processed as claimed in claim 9, which is characterized in that second pickling processes when Between be 1.8h~2.2h；The temperature of second acid solution is 45 DEG C~50 DEG C.
11. the processing method of target to be processed as described in claim 1, which is characterized in that before first pickling processes, Further include: decontamination processing is carried out to the target to be processed by acid deoiling agent solution.
12. the processing method of target to be processed as claimed in claim 11, which is characterized in that in the acid deoiling agent solution The concentration of acid deoiling agent is 10%~20%.
13. the processing method of target to be processed as claimed in claim 11, which is characterized in that the acid deoiling agent solution with The volume ratio of the target to be processed is 1.8~2.2.
14. the processing method of target to be processed as described in claim 1, which is characterized in that before first pickling processes, Further include: scrub processing is carried out to the target material surface to be processed.
15. the processing method of target to be processed as claimed in claim 14, which is characterized in that after scrub processing, further include The first cleaning treatment is carried out to the target to be processed by the first cleaning agent, first cleaning agent is water.
16. the processing method of target to be processed as described in claim 1, which is characterized in that further include: pass through the second cleaning agent Second cleaning treatment is carried out to the purification target, second cleaning agent is water.
17. the processing method of target to be processed as claimed in claim 16, which is characterized in that second cleaning treatment it It afterwards, further include that drying and processing is carried out to the purification target.
18. the processing method of target to be processed as claimed in claim 17, which is characterized in that by vacuum oven to described It purifies target and carries out drying and processing, the parameter of the drying and processing includes: that the vacuum degree in the vacuum oven is greater than 100Pa, drying temperature are 120 DEG C~150 DEG C, and drying time is 1h~2h.
19. the processing method of target to be processed as described in claim 1, which is characterized in that further include: to the purification target Carry out melting processing.
20. the processing method of target to be processed as claimed in claim 19, which is characterized in that molten by electron beam cold hearth vacuum Furnace carries out melting processing to the purification target.
CN201710426729.9A 2017-06-08 2017-06-08 Treatment method of target material to be treated Active CN109022792B (en)

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CN111378977A (en) * 2018-12-28 2020-07-07 宁波江丰电子材料股份有限公司 Target material processing method
CN114887963A (en) * 2022-04-29 2022-08-12 宁波江丰电子材料股份有限公司 Method for cleaning titanium target material

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CN102534517A (en) * 2011-12-27 2012-07-04 余姚康富特电子材料有限公司 Making method for target assembly
CN103447535A (en) * 2012-05-30 2013-12-18 宁波江丰电子材料有限公司 Target manufacturing method

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CN102534517A (en) * 2011-12-27 2012-07-04 余姚康富特电子材料有限公司 Making method for target assembly
CN103447535A (en) * 2012-05-30 2013-12-18 宁波江丰电子材料有限公司 Target manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111378977A (en) * 2018-12-28 2020-07-07 宁波江丰电子材料股份有限公司 Target material processing method
CN114887963A (en) * 2022-04-29 2022-08-12 宁波江丰电子材料股份有限公司 Method for cleaning titanium target material

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