CN109016731A - 一种高温ptc材料及电路保护元件 - Google Patents
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Abstract
本发明为一种高温PTC材料及电路保护元件，由高分子复合材料芯层以及复合于芯层两面的导电金属箔片构成。高分子复合材料芯层包含高分子基材、导电填料、梯形共轭高分子交联助剂和偶联剂。本发明采用梯形共轭高分子材料作为吸酸的交联助剂，与聚合物基体相容性好，且酸吸收后可部分半导化，不会造成元件阻值升高。
Description
技术领域
本发明属于电子材料和电子元件领域，涉及一种高温PTC材料及电路保护元件。
背景技术
正温度系数(PTC)材料的电阻率随温度的升高而增大，高分子与导电填料共混可制得的复合材料(PPTC)具有较低的室温电阻率，随温度升高电阻率增加并在某个温度点电阻急剧升高，在大电流状态下电阻急剧增加实现电路关断，并可在故障排除后自行恢复低阻状态。因此PPTC材料广泛应用于各类电子线路保护元器件上。应用于汽车的过电流保护组件通常较高温度下使用，并可能长时间暴露于潮湿环境中，需要具备良好环境稳定性。作为目前PPTC应用最为广泛的基材，高密度聚乙烯(HDPE)仍很难适应汽车电子的使用环境。目前用于较高温度下工作的PPTC基材多为PVDF等各种含氟聚乙烯材料，PVDF在辐射交联过程中产生HF等有害气体，对元件电导率和服役性能都有较大影响，因此，会加入氢氧化镁等吸酸性的交联助剂用于中和HF等气体，但吸收后仍然会造成性能劣化，另外，氢氧化镁等无机颗粒在聚合物基体中的相容性以及造成的电阻升高等问题也是元件性能的重要制约。
发明内容
针对现有技术缺陷，本发明的目的在于提供一种高温PTC材料及电路保护元件，由高分子复合材料芯层以及复合于芯层两面的导电金属箔片构成。高分子复合材料芯层包含高分子基材、导电填料、交联助剂和偶联剂，其特征在于：所述高分子基材为聚偏氟乙烯PVDF，占高温PTC材料体积分数的40％-70％；所述导电填掉粒径为0.05微米到10微米，占高温PTC材料体积份数的30％-55％，其粒径为0.05微米到10微米，所述交联助剂为梯形共轭高分子，占高温PTC材料体积份数的5％-10％，所述导电填料分散于所述的聚合物基体之中；偶联剂占体积分数0-1％。
所述导电填料包括金属颗粒、金属碳化物颗粒、金属硼化物颗粒、炭黑、碳纳米管、石墨烯等或其组合。
所述偶联剂为单烷氧基型钛酸酯偶联剂、单烷氧基焦磷酸酯型偶联剂、螯合型钛酸酯偶联剂、配位型钛酸酯偶联剂、季铵盐型钛酸酯偶联剂中的一种或其组合。
所述交联助剂为梯形共轭高分子，包括聚对苯二胺、聚间苯二胺、聚1，5-萘二胺、聚1，4-萘二胺、聚1，8-萘二胺中的一种或其组合。
所述的两个金属箔片包括镍箔、铜箔、镀镍铜箔中的一种，均含粗糙表面和较光滑表面，粗糙表面与所述导电复合材料芯层直接接触，两个金属箔片的光滑表面与分别导电部件焊接串接于被保护电路中。
高温PTC材料及电路保护元件制作流程包括：
(1)将原材料按照设定体积比混料；
(2)通过开炼机压延，得到高温PTC复合材料基层，将复合材料基层置于两层金属箔之间，通过热压合的方法将它们紧密结合在一起；
(3)采用冲片工艺得到设计尺寸规格的芯片，30-160kGy剂量的电子束辐照交联老化，得到高温PTC电路保护元件。
本发明采用梯形共轭高分子材料作为吸酸的交联助剂，与聚合物基体相容性好，且酸吸收后可部分半导化，不会造成元件阻值升高。
本发明的内容和特点已揭示如上，然而前面叙述的本发明仅仅简要地或只涉及本发明的特定部分，本发明的特征可能比在此公开的内容涉及的更多。因此，本发明的保护范围应不限于实施例所揭示的内容，而应该包括在不同部分中所体现的所有内容的组合，以及各种不背离本发明的替换和修饰，并为本发明的权利要求书所涵盖。
附图说明
图1采用本发明制成电感型PTC过流保护元件结构示意图。1-导电金属箔片；2-电感型高分子复合材料芯层。
具体实施方式
实施例1：
将聚偏氟乙烯PVDF、导电填料碳黑、交联助剂聚对苯二胺按体积比65％∶30％∶5％配料。经密炼混料得到电感型PTC复合材料。将上述熔融混合好的导电复合材料通过开炼机压延，得到厚度为0.30-0.40毫米的高温PTC复合材料芯层。
将复合材料基层按图1所示置于两层镍箔之间，通过热压合的方法将它们紧密结合在一起。然后经冲片工序冲成3mm*4mm导电复合材料芯片，30kGy剂量的电子束辐照交联老化，得到高温PTC过流保护元件。
实施例2：
将聚偏氟乙烯PVDF、导电填料碳化钨、交联助剂聚间苯二胺按体积比45％∶45％∶10％配料，经密炼混料得到电感型PTC复合材料。将上述熔融混合好的导电复合材料通过开炼机压延，得到厚度为0.30-0.40毫米的高温PTC复合材料芯层。
将复合材料基层按图1所示置于两层镀镍铜箔之间，通过热压合的方法将它们紧密结合在一起。然后经冲片工序冲成6mm*6mm导电复合材料芯片，50kGy剂量的电子束辐照交联老化，得到高温PTC过流保护元件。
实施例3：
将聚偏氟乙烯PVDF、导电填料二硼化钛、交联助剂聚1，5-萘二胺和单烷氧基焦磷酸酯型偶联剂按体积比49％∶45％∶5％∶1％配料，经密炼混料得到高温PTC复合材料。将上述熔融混合好的复合材料通过开炼机压延，得到厚度为0.40-0.50毫米的复合材料基层。
将复合材料基层按图1所示置于两层镍箔之间，通过热压合的方法将它们紧密结合在一起。然后经冲片工序冲成5mm*8mm导电复合材料芯片，60kGy剂量的电子束辐照交联老化，得到高温PTC过流保护元件。
实施例4：
将聚偏氟乙烯PVDF、导电填料碳化钛、交联助剂聚1，8-萘二胺和季铵盐型钛酸酯偶联剂按体积比60％∶39.5％∶5％∶0.5％配料，经密炼混料得到高温PTC复合材料。将上述熔融混合好的导电复合材料通过开炼机压延，得到厚度为0.50-0.55毫米的复合材料基层。
将复合材料基层按图1所示置于两层镀镍铜箔之间，通过热压合的方法将它们紧密结合在一起。然后经冲片工序冲成5mm*8mm导电复合材料芯片，100kGy剂量的电子束辐照交联老化，得到高温PTC过流保护元件。
实施例5：
将聚偏氟乙烯PVDF、导电填料碳化钛、交联助剂聚1，4-萘二胺和螯合型钛酸酯偶联剂按体积比50％∶41％∶8％∶1％配料，经密炼混料得到高温PTC复合材料。将上述熔融混合好的复合材料通过开炼机压延，得到厚度为0.30-0.35毫米的导电复合材料基层。
将复合材料基层按图1所示置于两层镀镍铜箔之间，通过热压合的方法将它们紧密结合在一起。然后经冲片工序冲成Φ7.5mm导电复合材料芯片，80kGy剂量的电子束辐照交联老化，得到高温PTC过流保护元件。
Claims (6)
1.一种高温PTC材料及电路保护元件，由高分子复合材料芯层以及复合于芯层两面的导电金属箔片构成。高分子复合材料芯层包含高分子基材、导电填料、交联助剂和偶联剂，其特征在于：所述高分子基材为聚偏氟乙烯PVDF，占高温PTC材料体积分数的40％-70％；所述导电填掉粒径为0.05微米到10微米，占高温PTC材料体积份数的30％-55％，其粒径为0.05微米到10微米，所述交联助剂为梯形共轭高分子，占高温PTC材料体积份数的5％-10％，所述导电填料分散于所述的聚合物基体之中；偶联剂占体积分数0-1％。
2.根据权利要求1所述一种高温PTC材料及电路保护元件，其特征在于，所述导电填料包括金属颗粒、金属碳化物颗粒、金属硼化物颗粒、炭黑、碳纳米管、石墨烯等或其组合。
3.根据权利要求1所述一种高温PTC材料及电路保护元件，其特征在于，所述偶联剂为单烷氧基型钛酸酯偶联剂、单烷氧基焦磷酸酯型偶联剂、螯合型钛酸酯偶联剂、配位型钛酸酯偶联剂、季铵盐型钛酸酯偶联剂中的一种或其组合。
4.根据权利要求1所述一种高温PTC材料及电路保护元件，其特征在于，所述交联助剂为梯形共轭高分子，包括聚对苯二胺、聚间苯二胺、聚1，5-萘二胺、聚1，4-萘二胺、聚1，8-萘二胺中的一种或其组合。
5.根据权利要求1所述一种高温PTC材料及电路保护元件，其特征在于，所述的两个金属箔片包括镍箔、铜箔、镀镍铜箔中的一种，均含粗糙表面和较光滑表面，粗糙表面与所述导电复合材料芯层直接接触，两个金属箔片的光滑表面与分别导电部件焊接串接于被保护电路中。
6.根据权利要求1所述一种高温PTC材料及电路保护元件，其特征在于：制作流程包括：
(1)将原材料按照设定体积比混料；
(2)通过开炼机压延，得到高温PTC复合材料基层，将复合材料基层置于两层金属箔之间，通过热压合的方法将它们紧密结合在一起；
(3)采用冲片工艺得到设计尺寸规格的芯片，30-160kGy剂量的电子束辐照交联老化，得到高温PTC电路保护元件。
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