CN109004072A - A kind of flip LED chips and preparation method thereof - Google Patents
A kind of flip LED chips and preparation method thereof Download PDFInfo
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- CN109004072A CN109004072A CN201810843269.4A CN201810843269A CN109004072A CN 109004072 A CN109004072 A CN 109004072A CN 201810843269 A CN201810843269 A CN 201810843269A CN 109004072 A CN109004072 A CN 109004072A
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- 239000000758 substrate Substances 0.000 claims abstract description 128
- 239000000919 ceramic Substances 0.000 claims abstract description 123
- 229910002704 AlGaN Inorganic materials 0.000 claims description 19
- 239000000843 powder Substances 0.000 claims description 17
- 238000002161 passivation Methods 0.000 claims description 15
- 239000002243 precursor Substances 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
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Abstract
The invention discloses a kind of flip LED chips, used substrate is the fluorescence ceramics substrate that fluorescent grain is distributed with, and it is disposed with N-shaped epitaxial layer, luminescent layer and p-type epitaxial layer in the first surface of fluorescence ceramics substrate, and form the structure of flip LED chips.Some light caused by luminescent layer can inject above-mentioned fluorescence ceramics substrate, to excite the fluorescent grain in fluorescence ceramics substrate to generate the light of corresponding color, there is light caused by fluorescent grain complementary to generate the light of pre-set color with produced by luminescent layer and through the light of fluorescence ceramics substrate, so as to avoid the light-emitting area in flip LED chips from covering fluorescent glue.Avoid setting fluorescent glue that from can effectively increasing the heat resistance of flip LED chips, to effectively increase the reliability and service life of LED component.The present invention also provides a kind of preparation method of flip LED chips, prepared flip LED chips equally have above-mentioned beneficial effect.
Description
Technical field
The present invention relates to LED technology fields, more particularly to a kind of flip LED chips and preparation method thereof.
Background technique
As the continuous progress of science and technology, LED (light emitting diode) technology have obtained great development in recent years.Compared to such as biography
The lighting apparatus of system, LED has many advantages, such as that service life length, high efficient and reliable, brightness of illumination are uniform, is free of noxious material, extensive
It applies in the field of the people's daily life such as medical treatment, illumination.
At this stage, in order to allow the LED component for being equipped with flip LED chips that can launch the light of pre-set color, lead to
Often need to be packaged flip LED chips.As the simplest CSP of structure (chip-scale) is encapsulated in the prior art, it is also desirable to
The light-emitting area of flip LED chips covers one layer of fluorescent glue doped with fluorescent grain, passes through flip LED chips emitted light
Excitation and light complementation and generate the light of pre-set color.
But which kind of encapsulation technology no matter is used, at least thicker glimmering of a layer thickness can be covered on flip LED chips surface
Optical cement, it is poor so as to cause the heat resistance of LED component, but since LED component is commonly used in illumination, operating ambient temperature is logical
It is often higher, so that the reliability and service life of LED component in the prior art are usually lower.
Summary of the invention
The object of the present invention is to provide a kind of flip LED chips, can produce without encapsulation pre-
If the light of color；Another object of the present invention is to provide a kind of preparation method of flip LED chips, prepared upside-down mounting
LED chip can produce the light of pre-set color without encapsulation.
In order to solve the above technical problems, the present invention provides a kind of flip LED chips, comprising:
Fluorescence ceramics substrate；Wherein, fluorescent grain is distributed in the fluorescence ceramics substrate；
Positioned at the N-shaped epitaxial layer of the fluorescence ceramics substrate first surface；
Positioned at the N-shaped epitaxial layer backwards to the luminescent layer in the fluorescence ceramics one side of substrate surface light emitting region；
Positioned at the luminescent layer backwards to the p-type epitaxial layer on fluorescence ceramics one side of substrate surface；
Positioned at the p-type epitaxial layer backwards to the p-electrode on fluorescence ceramics one side of substrate surface；
Positioned at the N-shaped epitaxial layer backwards to the n-electrode in the fluorescence ceramics one side of substrate surface electrode region.
Optionally, the fluorescent grain is yellow fluorescence particle；The light that the luminescent layer is issued is blue ray.
Optionally, the N-shaped epitaxial layer is n-type GaN layer；The p-type epitaxial layer is p-type GaN layer.
Optionally, the flip LED chips further include:
P-type AlGaN layer between the p-type GaN layer and the luminescent layer.
Optionally, the first surface of the fluorescence ceramics substrate is etched with nano graph in advance.
Optionally, the substrate of the fluorescence ceramics substrate is aluminium oxide or silicon carbide.
Optionally, the flip LED chips further include:
Cover the passivation layer of the N-shaped epitaxial layer side wall, the luminescent layer side wall and the p-type epitaxial layer side wall.
Optionally, the luminescent layer is Quantum well active district.
Optionally, the flip LED chips further include:
Positioned at the p-type epitaxial layer backwards to the specular layer on fluorescence ceramics one side of substrate surface.
The present invention also provides a kind of preparation methods of flip LED chips, comprising:
Fluorescent grain and base powder are mixed into precursor powder；
It is sintered the precursor powder and is solidified into fluorescence ceramics substrate；
In the first surface epitaxial growth N-shaped epitaxial layer of the fluorescence ceramics substrate；
In the N-shaped epi-layer surface epitaxial growth luminescent layer；
In the luminous layer surface epitaxial growth p-type epitaxial layer；
The p-type epitaxial layer and the luminescent layer are etched with the electrode zone of the exposure N-shaped epi-layer surface；
P-electrode is set on the p-type epitaxial layer surface, and in the electrode zone of N-shaped epi-layer surface setting n electricity
Pole, the flip LED chips are made.
A kind of flip LED chips provided by the present invention, used substrate are the fluorescence ceramics that fluorescent grain is distributed with
Substrate, and it is disposed with N-shaped epitaxial layer, luminescent layer and p-type epitaxial layer in the first surface of fluorescence ceramics substrate, wherein sending out
Photosphere is located only within N-shaped epitaxial layer backwards to the light emitting region on fluorescence ceramics one side of substrate surface, makes pottery in type epitaxial layer backwards to fluorescence
The electrode zone on porcelain one side of substrate surface is provided with n-electrode, while setting in p-type epitaxial layer backwards to fluorescence ceramics one side of substrate surface
It is equipped with p-electrode, to constitute the structure of flip LED chips.Some light caused by luminescent layer can inject above-mentioned fluorescence ceramics
Substrate has light caused by fluorescent grain so that the fluorescent grain in fluorescence ceramics substrate be excited to generate the light of corresponding color
Line can be complementary to generate the light of pre-set color with produced by luminescent layer and through the light of fluorescence ceramics substrate, and no longer
It needs to be packaged flip LED chips the light that could generate pre-set color, so as to avoid the hair in flip LED chips
Optical surface covers fluorescent glue.The temperature that can be born due to fluorescent glue avoids setting fluorescent glue that from can having only at 200 DEG C or so
Effect increases the heat resistance of flip LED chips, to effectively increase the reliability and service life of LED component.
The present invention also provides a kind of preparation method of flip LED chips, prepared flip LED chips equally have upper
Beneficial effect is stated, is no longer repeated herein.
Detailed description of the invention
It, below will be to embodiment or existing for the clearer technical solution for illustrating the embodiment of the present invention or the prior art
Attached drawing needed in technical description is briefly described, it should be apparent that, the accompanying drawings in the following description is only this hair
Bright some embodiments for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is a kind of structural schematic diagram of flip LED chips provided by the embodiment of the present invention；
Fig. 2 is a kind of structural schematic diagram of specific flip LED chips provided by the embodiment of the present invention；
Fig. 3 is a kind of flow chart of flip LED chips preparation method provided by the embodiment of the present invention.
In figure: 1. fluorescence ceramics substrates, 2.n type epitaxial layer, 3. luminescent layers, 4.p type epitaxial layer, 41.p type AlGaN layer,
5.p electrode, 6.n electrode, 7. specular layers, 8. passivation layers.
Specific embodiment
Core of the invention is to provide a kind of upside-down mounting flip LED chips.At this stage, in order to allow flip LED chips to generate
The light of pre-set color is in the prior art required to be arranged fluorescent glue in the light-emitting area of flip LED chips, and fluorescent glue
For the temperature that can be born only at 200 DEG C or so, the heat resistance that setting fluorescent glue will result directly in LED component is poor, so that existing
There are reliability and the service life of the LED component in technology usually lower.
And a kind of flip LED chips provided by the present invention, used substrate are the fluorescence pottery that fluorescent grain is distributed with
Ceramic liner bottom, and it is disposed with N-shaped epitaxial layer, luminescent layer and p-type epitaxial layer in the first surface of fluorescence ceramics substrate, wherein
Luminescent layer is located only within N-shaped epitaxial layer backwards to the light emitting region on fluorescence ceramics one side of substrate surface, in type epitaxial layer backwards to fluorescence
The electrode zone of one side surface of ceramic substrate is provided with n-electrode, while in p-type epitaxial layer backwards to fluorescence ceramics one side of substrate surface
It is provided with p-electrode, to constitute the structure of flip LED chips.Some light caused by luminescent layer can inject above-mentioned fluorescence pottery
Ceramic liner bottom has caused by fluorescent grain so that the fluorescent grain in fluorescence ceramics substrate be excited to generate the light of corresponding color
Light can be complementary to generate the light of pre-set color with produced by luminescent layer and through the light of fluorescence ceramics substrate, without
It needs to be packaged flip LED chips the light that could generate pre-set color again, so as to avoid in flip LED chips
Light-emitting area covers fluorescent glue.The temperature that can be born due to fluorescent glue avoids setting fluorescent glue can be with only at 200 DEG C or so
The heat resistance of flip LED chips is effectively increased, to effectively increase the reliability and service life of LED component.
In order to enable those skilled in the art to better understand the solution of the present invention, with reference to the accompanying drawings and detailed description
The present invention is described in further detail.Obviously, described embodiments are only a part of the embodiments of the present invention, rather than
Whole embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative work premise
Under every other embodiment obtained, shall fall within the protection scope of the present invention.
Referring to FIG. 1, Fig. 1 is a kind of structural schematic diagram of flip LED chips provided by the embodiment of the present invention.
Referring to Fig. 1, in embodiments of the present invention, the flip LED chips include:
Fluorescence ceramics substrate 1；Wherein, fluorescent grain is distributed in the fluorescence ceramics substrate 1；Positioned at the fluorescence ceramics
The N-shaped epitaxial layer 2 of 1 first surface of substrate；Positioned at the N-shaped epitaxial layer 2 backwards to the 1 side surface light emitting of fluorescence ceramics substrate
The luminescent layer 3 in region；Positioned at the luminescent layer 3 backwards to the p-type epitaxial layer 4 of 1 one side surface of fluorescence ceramics substrate；Positioned at institute
State p-electrode 5 of the p-type epitaxial layer 4 backwards to 1 one side surface of fluorescence ceramics substrate；Positioned at the N-shaped epitaxial layer 2 backwards to described
The n-electrode 6 in 1 side surface electrode region of fluorescence ceramics substrate.
Above-mentioned fluorescence ceramics substrate 1 is added with substrate made of prepared by fluorescent grain in ceramic material.In this hair
It specifically will use substrate of the fluorescence ceramics substrate 1 as production flip LED chips in bright embodiment.Under normal conditions, fluorescence is made pottery
Fluorescent grain in ceramic liner bottom 1 can be evenly distributed in fluorescence ceramics substrate 1.Specifically, the substrate of fluorescence ceramics substrate 1 is usual
For polycrystalline material, above-mentioned fluorescent grain is usually generally evenly distributed between the crystal grain gap of polycrystalline material, i.e., above-mentioned fluorescent grain
Usually will not the physical properties such as lattice constant to polycrystalline material impact.
In embodiments of the present invention, the substrate of above-mentioned fluorescence ceramics substrate 1 can be aluminium oxide or silicon carbide.It is i.e. above-mentioned glimmering
Light ceramic substrate 1 is specifically as follows the doping fluorescent particle in alpha-alumina crystals (sapphire) and the fluorescence ceramics substrate 1 that is formed,
The fluorescence ceramics substrate 1 for being also possible to the doping fluorescent particle in carborundum crystals (SiC) and being formed.Certainly, of the invention real
It applies the specific material of the substrate in relation to fluorescence ceramics substrate 1 in example and is not specifically limited, it is depending on the circumstances.Related fluorescence
The specific preparation flow of ceramic substrate 1 will be described in detail in following inventive embodiments, no longer be repeated herein.
In embodiments of the present invention, N-shaped epitaxial layer 2 is located at the first surface of fluorescence ceramics substrate 1.So-called first surface,
For the surface of N-shaped epitaxial layer 2 to be arranged i.e. in fluorescence ceramics substrate 1, in embodiments of the present invention in fluorescence ceramics substrate 1
The specific location of first surface is simultaneously not specifically limited.Above-mentioned N-shaped epitaxial layer 2 be located at the first surface of fluorescence ceramics substrate 1 and
It is fixedly connected with fluorescence ceramics substrate 1.The effect of the N-shaped epitaxial layer 2 is in the operating condition, to provide electronics to luminescent layer 3,
To realize the coupling in hole and electronics in luminescent layer 3, and then generate the light of required color.Specifically, above-mentioned N-shaped extension
Layer 2 is usually n-type GaN layer, certainly, in embodiments of the present invention for the specific material of N-shaped epitaxial layer 2 and specific thickness etc.
Relevant parameter is simultaneously not specifically limited, depending on the circumstances.
In embodiments of the present invention, luminescent layer 3 is located at the N-shaped epitaxial layer 2 backwards to the 1 side table of fluorescence ceramics substrate
The light emitting region in face.As in order to guarantee light caused by luminescent layer 3 need through fluorescence ceramics substrate 1 and outwardly pass
It passs, LED chip provided by the embodiment of the present invention is specially flip LED chips, and N-shaped epitaxial layer 2 is served as a contrast backwards to fluorescence ceramics at this time
1 one side surface of bottom is generally divided into two regions: wherein light emitting region is for being arranged luminescent layer 3；And electrode zone is for setting
N-electrode 6 is set, the particular content in relation to n-electrode 6 will be described in detail in subsequent content.
Above-mentioned luminescent layer 3 is located at light emitting region of the N-shaped epitaxial layer 2 backwards to 1 one side surface of fluorescence ceramics substrate, and shines
Layer 3 is fixedly connected with N-shaped epitaxial layer 2.The effect of the luminescent layer 3 is that in the operating condition, reception is transmitted by N-shaped epitaxial layer 2
The electronics to come over and the hole for having p-type epitaxial layer 4 to pass over, the electronics and hole can couple in luminescent layer 3,
To generate light.Specifically, above-mentioned luminescent layer 3 is usually Quantum well active district, so-called Quantum well active district is alternately arranged
Luminescent layer 3 made of well layer and barrier layer stack, the specific structure in relation to Quantum well active district are referred to the prior art,
In embodiments of the present invention and it is not specifically limited.It should be noted that at this stage in order to enable flip LED chips can be sent out
White light is projected, needs above-mentioned luminescent layer 3 that can specifically launch blue light under normal conditions, corresponding above-mentioned fluorescence ceramics substrate 1
In fluorescent grain be specially yellow fluorescence particle.In working condition, a part for the blue light that above-mentioned luminescent layer 3 is issued can
To excite the above-mentioned yellow fluorescence particle emission yellow light being entrained in fluorescence ceramics substrate 1, which can be mutual with remaining blue light
It mends to form white light, flip LED chips provided by the embodiment of the present invention is allowed outwardly to emit white light.Work as luminescent layer
3 when needing outwardly to emit blue light, which is specifically as follows the Quantum well active district of InGaN/AlGaN structure.
In embodiments of the present invention, p-type epitaxial layer 4 is located at luminescent layer 3 backwards to 1 one side surface of fluorescence ceramics substrate.Usually
In the case of, the above-mentioned needs of p-type epitaxial layer 4 are fixedly connected with luminescent layer 3.The effect of the p-type epitaxial layer 4 is in working condition
Under, hole is provided to luminescent layer 3, to realize the coupling in hole and electronics in luminescent layer 3, and then generates the light of required color
Line.Specifically, above-mentioned p-type epitaxial layer 4 is usually p-type GaN layer, certainly, in embodiments of the present invention for p-type epitaxial layer 4
The specific relevant parameters such as material and specific thickness are simultaneously not specifically limited, depending on the circumstances.
In embodiments of the present invention, p-electrode 5 is located at p-type epitaxial layer 4 backwards to 1 one side surface of fluorescence ceramics substrate, p-electrode 5
By being in contact to realize being electrically connected between p-electrode 5 and p-type epitaxial layer 4 with p-type epitaxial layer 4.In relation to the specific of p-electrode 5
Material in embodiments of the present invention and is not specifically limited, and the material of above-mentioned p-electrode 5 can be specially pure metal or alloy etc.
Deng.In embodiments of the present invention, n-electrode 6 is located at electrode zone of the N-shaped epitaxial layer 2 backwards to 1 one side surface of fluorescence ceramics substrate, n
Electrode 6 realizes being electrically connected between n-electrode 6 and N-shaped epitaxial layer 2 by being in contact with N-shaped epitaxial layer 2.Related n-electrode 6
Specific material in embodiments of the present invention and be not specifically limited, the material of above-mentioned n-electrode 6 can be specially pure metal or conjunction
Gold etc..It should be noted that the above-mentioned needs of n-electrode 6 are isolated with luminescent layer 3 and p-type epitaxial layer 4, it is under normal conditions
Allow n-electrode 6 not to be in contact with luminescent layer 3 and p-type epitaxial layer 4 and realize it is mutually isolated, to avoid n-electrode 6 and p-electrode 5 it
Between short circuit.
In working condition, n-electrode 6 and the meeting of p-electrode 5 and extraneous power electric connection, extraneous power supply can be in work shapes
Voltage is applied by first n-electrode 6 and p-electrode 5 when state, to drive in electronics and the p-type epitaxial layer 4 in N-shaped epitaxial layer 2
Hole be moved in luminescent layer 3, so that the coupling of electron-hole pair occur, and then generate light.
A kind of flip LED chips provided by the embodiment of the present invention, used substrate are fluorescent grain is distributed with glimmering
Light ceramic substrate 1, and be disposed with outside N-shaped epitaxial layer 2, luminescent layer 3 and p-type in the first surface of fluorescence ceramics substrate 1
Prolong layer 4, wherein luminescent layer 3 is located only within light emitting region of the N-shaped epitaxial layer 2 backwards to 1 one side surface of fluorescence ceramics substrate, outside type
Prolong electrode zone of the layer backwards to 1 one side surface of fluorescence ceramics substrate and be provided with n-electrode 6, while in p-type epitaxial layer 4 backwards to fluorescence
1 one side surface of ceramic substrate is provided with p-electrode 5, to constitute the structure of flip LED chips.Some light caused by luminescent layer 3
Above-mentioned fluorescence ceramics substrate 1 can be injected, to excite the light of the fluorescent grain generation corresponding color in fluorescence ceramics substrate 1
Line, have light caused by fluorescent grain can with produced by luminescent layer 3 and through the light of fluorescence ceramics substrate 1 it is complementary to
The light of pre-set color is generated, and no longer needs to be packaged flip LED chips the light that could generate pre-set color, thus
Fluorescent glue can be covered to avoid in the light-emitting area of flip LED chips.The temperature that can be born due to fluorescent glue is only at 200 DEG C
Left and right avoids setting fluorescent glue that from can effectively increasing the heat resistance of flip LED chips, to effectively increase the reliable of LED component
Property and service life.
It, in the present invention can be into order to further improve the properties of flip LED chips provided by the present invention
One step optimizes the properties of flip LED chips, and detailed content will be described in detail in following inventive embodiments.
Referring to FIG. 2, Fig. 2 is a kind of structural schematic diagram of specific flip LED chips provided by the embodiment of the present invention.
It is different from foregoing invention embodiment, the embodiment of the present invention is on the basis of foregoing invention embodiment, further
The structure of flip LED chips is specifically limited.Remaining content is described in detail in foregoing invention embodiment,
This is no longer repeated.
Referring to fig. 2, in embodiments of the present invention, the p-type epitaxial layer 4 is specially p-type GaN layer, the flip LED chips
It further include the p-type AlGaN layer 41 between the p-type GaN layer and the luminescent layer 3.I.e. above-mentioned p-type AlGaN layer 41 is usually
The luminescent layer 3 is covered backwards to 1 one side surface of fluorescence ceramics substrate, while p-type GaN layer blanket p-type AlGaN layer 41 is backwards to fluorescence
1 one side surface of ceramic substrate.
The hole of larger concentration can be usually adulterated in above-mentioned p-type GaN layer, so that current-carrying with higher in p-type GaN layer
Sub- concentration.But the forbidden bandwidth of p-type GaN layer is wider, needing to apply biggish voltage could make hole mobile.Therefore at this
In inventive embodiments, p-type AlGaN layer 41 can be set between p-type GaN layer and luminescent layer 3.The forbidden band of p-type AlGaN layer 41 is wide
It spends lower, is provided with after p-type AlGaN layer 41 to be equivalent in forbidden band and increases step, to effectively have adjusted p-type
The energy in hole in GaN layer allows hole to be first moved to p-type AlGaN layer from p-type GaN layer under the driving of lesser voltage
41, then it is moved to luminescent layer 3 from p-type AlGaN layer 41 under the driving of lesser voltage, to reduce required when the movement of driving hole
Voltage, to improve the mobile efficiency of carrier in flip LED chips.
Preferably, in embodiments of the present invention, the first surface of the fluorescence ceramics substrate 1 is etched in advance
Nano graph.It i.e. in embodiments of the present invention, can be using techniques such as exposure mask, photoetching, in the first surface of fluorescence ceramics substrate 1
Nano graph is etched, so that the fluorescence ceramics substrate 1 that surface has nano graph is made in fluorescence ceramics substrate 1, forms class
It is similar to the structure of NPSS (Sapphire Substrate that surface has nano graph).
Etching nano-pattern by the first surface in fluorescence ceramics substrate 1 can be in the first table of fluorescence ceramics substrate 1
Face forms air column, to effectively reduce the stress and dislocation of the subsequent film layer in the growth of 1 first surface of fluorescence ceramics substrate.
In embodiments of the present invention, it for the nano-pattern that specifically etches and is not specifically limited, it is depending on the circumstances.Equally at this
The inventive embodiments of specific depth in to(for) nano-pattern is equally not specifically limited.
Preferably, in embodiments of the present invention, the flip LED chips further include being located at the p-type epitaxial layer 4 to carry on the back
To the specular layer 7 of 1 one side surface of fluorescence ceramics substrate.The i.e. described specular layer 7 usually setting and p-type epitaxial layer
Between 4 and p-electrode 5.
Above-mentioned specular layer 7 is mainly used for reflexing to fluorescence for light is as much as possible caused by above-mentioned luminescent layer 3
Ceramic substrate 1, to improve the amount of light of flip LED chips.Under normal conditions, above-mentioned luminescent layer 3 can to all the winds emit
Light, and above-mentioned specular layer 7 can will be served as a contrast to the light emitted backwards to 1 side of fluorescence ceramics substrate to towards fluorescence ceramics
The direction at bottom 1 is reflected, to improve the amount of light of flip LED chips.Specifically, in embodiments of the present invention, the mirror surface is anti-
Penetrating layer 7 is mainly metal foil made by metallic aluminium or aluminum titanium alloy.Certainly, in embodiments of the present invention for mirror surface
The specific material in reflecting layer 7 is simultaneously not specifically limited, depending on the circumstances.Under normal conditions, the needs of specular layer 7 have
Good electric conductivity, to guarantee to be electrically connected between p-type epitaxial layer 4 and p-electrode 5.
Preferably, in embodiments of the present invention, the flip LED chips further include covering 2 side of N-shaped epitaxial layer
The passivation layer 8 of 4 side wall of wall, 3 side wall of the luminescent layer and the p-type epitaxial layer.I.e. above-mentioned passivation layer 8 usually requires covering upside-down mounting
The surface that LED chip is in contact with external environment, to protect flip LED chips to be not easily susceptible to the corrosion and destruction of external environment.
Under normal conditions, above-mentioned passivation layer 8 also needs to cover the side wall of fluorescence ceramics substrate 1, fluorescence ceramics substrate 1 backwards to first surface
Second surface and N-shaped the epitaxial layer 2 exposed surface in external environment in 1 one side surface of fluorescence ceramics substrate.When
So, it if being additionally provided with other film layers in flip LED chips, is usually required on the surface that the film layer is in contact with external environment
Passivation layer 8 is set.It should be noted that above-mentioned passivation layer 8 will not usually be covered on the surface of p-electrode 5 and n-electrode 6, so that
It obtains n-electrode 6 and p-electrode 5 can be with extraneous power electric connection.
Under normal conditions, during preparing above-mentioned flip LED chips, be arranged above-mentioned n-electrode 6 and p-electrode 5 it
Before, processing can be passivated to the surface of flip LED chips, thus on the surface that flip LED chips are in contact with external environment
Form a passivation layer 8.When p-electrode 5 is arranged, etched portions passivation layer 8 is needed to expose p-type epitaxial layer 4；It is being arranged accordingly
When n-electrode 6, need etched portions passivation layer 8 with the electrode zone on above-mentioned 2 surface of N-shaped epitaxial layer of exposure.Pass through above-mentioned passivation layer
8 can improve the current spreading problem of luminescent layer 3 in flip LED chips while effective protection flip LED chips, reduce
Electric current pile up effect improves the light output rate of flip LED chips.Specific material and design parameter in relation to above-mentioned passivation layer 8
In the embodiment of the present invention and it is not specifically limited, it is depending on the circumstances as long as passivation effect can be played.
A kind of flip LED chips provided by the embodiment of the present invention, by the way that p is arranged between p-type GaN layer and luminescent layer 3
Type AlGaN layer 41 can reduce voltage required when the movement of driving hole, so that it is mobile to improve carrier in flip LED chips
Efficiency；Nano-pattern is etched by the first surface in fluorescence ceramics substrate 1, can be effectively reduced subsequent in fluorescence ceramics lining
The stress and dislocation of the film layer of 1 first surface of bottom growth, to improve the quality of flip LED chips；By in p-type epitaxial layer
4 are arranged specular layer 7 backwards to 1 one side surface of fluorescence ceramics substrate, can effectively improve the amount of light of flip LED chips；It is logical
Cross the surface that flip LED chips are in contact with external environment setting passivation layer 8 can with effective protection flip LED chips not vulnerable to
To corrosion and damage.
The preparation method for being provided for the embodiments of the invention a kind of flip LED chips below is introduced, and is described below
Preparation method can correspond to each other reference with above-described flip LED chips.
Referring to FIG. 3, Fig. 3 is a kind of flow chart of flip LED chips preparation method provided by the embodiment of the present invention.
Referring to Fig. 3, in embodiments of the present invention, the preparation method of the flip LED chips includes:
S101: fluorescent grain and base powder are mixed into precursor powder.
In this step, fluorescent grain and base powder can be mixed into precursor powder.Specifically, in this step,
Fluorescent grain, base powder can be equal to pure water and be mixed into precursor pulp ,if needed can also be into precursor pulp
Catalytic materials powder is added, and process adequately mixes；It will be dried in precursor pulp later, to obtain precursor
End.Specific ingredient in relation to precursor powder is referred to the prior art, in embodiments of the present invention and is not specifically limited.
S102: sintered precursor powder is simultaneously solidified into fluorescence ceramics substrate.
In this step, precursor powder can be heated to molten condition, and gradually cooling so that precursor powder solidify,
And finally obtain fluorescence ceramics substrate.Under normal conditions, it after precursor powder solidification, can obtain with ceramics pole, usual feelings
Need to cut ceramics pole flakiness under condition to obtain fluorescence ceramics substrate.Under normal conditions, it is also necessary to which fluorescence ceramics are served as a contrast
The pretreatment such as is cleaned, is polished in bottom, to guarantee the first surface relative clean, smooth of fluorescence ceramics substrate.
After the above preprocessing, the techniques such as exposure mask, photoetching can be further used, the first of fluorescence ceramics substrate
Surface etch goes out nano graph, to being made fluorescence ceramics substrate, similar to NPSS, (surface has the sapphire of nano graph
Substrate) structure.Specific structure in relation to fluorescence ceramics substrate is described in detail in foregoing invention embodiment, herein no longer
It is repeated.
S103: in the first surface epitaxial growth N-shaped epitaxial layer of fluorescence ceramics substrate.
It in this step, can be in the first surface epitaxial growth N-shaped epitaxial layer of fluorescence ceramics substrate.Specifically, in this step
MOCVD device can be specifically used in rapid, in the first surface epitaxial growth N-shaped epitaxial layer of fluorescence ceramics substrate.Outside related N-shaped
The specific structure for prolonging layer is described in detail in foregoing invention embodiment, is no longer repeated herein.The related above-mentioned N-shaped of setting
The design parameter of MOCVD device is referred to the prior art when epitaxial layer, in embodiments of the present invention and is not specifically limited.
S104: in N-shaped epi-layer surface epitaxial growth luminescent layer.
MOCVD device can be specifically used in this step, in N-shaped epi-layer surface epitaxial growth luminescent layer.Related hair
The specific structure of photosphere is described in detail in foregoing invention embodiment, is no longer repeated herein.The related above-mentioned hair of setting
The design parameter of MOCVD device is referred to the prior art when photosphere, in embodiments of the present invention and is not specifically limited.
S105: in luminous layer surface epitaxial growth p-type epitaxial layer.
In this step, MOCVD device can be specifically used, in the surface epitaxial growth p-type epitaxial layer of luminescent layer.It is related
The specific structure of p-type epitaxial layer is described in detail in foregoing invention embodiment, is no longer repeated herein.In related setting
The design parameter of MOCVD device is referred to the prior art when stating p-type epitaxial layer, does not do specific limit in embodiments of the present invention
It is fixed.
If set p-type epitaxial layer is that p-type GaN layer can first sent out accordingly before this step in this step
Photosphere surface epitaxial growth p-type AlGaN layer, then in this step in the surface epitaxial growth p-type GaN layer of p-type AlGaN layer.?
When p-type AlGaN layer is set, MOCVD device can be specifically used, in the surface epitaxial growth p-type AlGaN layer of luminescent layer.Related p
The specific structure of type AlGaN layer is described in detail in foregoing invention embodiment, is no longer repeated herein.In related setting
The design parameter of MOCVD device is referred to the prior art when stating p-type AlGaN layer, does not do in embodiments of the present invention specific
It limits.
S106: etching p-type epitaxial layer and luminescent layer are with the electrode zone of exposing n-type epi-layer surface.
It in this step, can etch away sections p-type epitaxial layer and part luminescent layer.Specifically, N-shaped epitaxial layer can be carried on the back
Into fluorescence ceramics one side of substrate surface, p-type epitaxial layer corresponding to electrode zone and luminescent layer are etched away, and have exposed N-shaped
Epitaxial layer backwards to fluorescence ceramics one side of substrate surface electrode zone, so that flip LED chips are made in the next steps.It is related
The concrete technology of etching is referred to the prior art, in embodiments of the present invention and is not specifically limited.
S107: being arranged p-electrode on p-type epitaxial layer surface, and n-electrode be arranged in the electrode zone of N-shaped epi-layer surface, with
Flip LED chips are made.
In this step, specifically p-electrode can be set on the surface of p-type epitaxial layer, to guarantee that p-electrode can be with p-type extension
Layer electrical connection；N can be set in electrode zone of the N-shaped epitaxial layer backwards to fluorescence ceramics one side of substrate surface in this step accordingly
Electrode, to guarantee that n-electrode is electrically connected with N-shaped epitaxial layer.Under normal conditions, n-electrode cannot be with above-mentioned luminescent layer and p-type extension
Layer contact, to avoid that short circuit occurs between p-electrode and n-electrode.Specific structure in relation to above-mentioned n-electrode and p-electrode has existed
It is described in detail in foregoing invention embodiment, is no longer repeated herein.After having executed above-mentioned process, that is, it can be made into this hair
Flip LED chips provided by bright embodiment.
A kind of preparation method of flip LED chips provided by the embodiment of the present invention, it is prepared made of flip LED chips
Some light caused by middle luminescent layer can inject above-mentioned fluorescence ceramics substrate, to excite the fluorescence in fluorescence ceramics substrate
Particle generates the light of corresponding color, have light caused by fluorescent grain can with produced by luminescent layer and through fluorescence ceramics
The light complementation of substrate is to generate the light of pre-set color, and no longer needing to be packaged flip LED chips could generate
The light of pre-set color, so as to avoid the light-emitting area in flip LED chips from covering fluorescent glue.Since fluorescent glue can be held
The temperature received avoids setting fluorescent glue that from can effectively increasing the heat resistance of flip LED chips, to have only at 200 DEG C or so
Effect increases the reliability and service life of LED component.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with it is other
The difference of embodiment, same or similar part may refer to each other between each embodiment.For being filled disclosed in embodiment
For setting, since it is corresponded to the methods disclosed in the examples, so being described relatively simple, related place is referring to method part
Explanation.
Professional further appreciates that, unit described in conjunction with the examples disclosed in the embodiments of the present disclosure
And algorithm steps, can be realized with electronic hardware, computer software, or a combination of the two, in order to clearly demonstrate hardware and
The interchangeability of software generally describes each exemplary composition and step according to function in the above description.These
Function is implemented in hardware or software actually, the specific application and design constraint depending on technical solution.Profession
Technical staff can use different methods to achieve the described function each specific application, but this realization is not answered
Think beyond the scope of this invention.
The step of method described in conjunction with the examples disclosed in this document or algorithm, can directly be held with hardware, processor
The combination of capable software module or the two is implemented.Software module can be placed in random access memory (RAM), memory, read-only deposit
Reservoir (ROM), electrically programmable ROM, electrically erasable ROM, register, hard disk, moveable magnetic disc, CD-ROM or technology
In any other form of storage medium well known in field.
Finally, it is to be noted that, herein, relational terms such as first and second and the like be used merely to by
One entity or operation are distinguished with another entity or operation, without necessarily requiring or implying these entities or operation
Between there are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant meaning
Covering non-exclusive inclusion, so that the process, method, article or equipment for including a series of elements not only includes that
A little elements, but also including other elements that are not explicitly listed, or further include for this process, method, article or
The intrinsic element of equipment.In the absence of more restrictions, the element limited by sentence "including a ...", is not arranged
Except there is also other identical elements in the process, method, article or apparatus that includes the element.
A kind of flip LED chips provided by the present invention and preparation method thereof are described in detail above.Herein
Apply that a specific example illustrates the principle and implementation of the invention, the explanation of above example is only intended to help
Understand method and its core concept of the invention.It should be pointed out that for those skilled in the art, not taking off
, can be with several improvements and modifications are made to the present invention under the premise of from the principle of the invention, these improvement and modification also fall into this
In invention scope of protection of the claims.
Claims (10)
1. a kind of flip LED chips characterized by comprising
Fluorescence ceramics substrate；Wherein, fluorescent grain is distributed in the fluorescence ceramics substrate；
Positioned at the N-shaped epitaxial layer of the fluorescence ceramics substrate first surface；
Positioned at the N-shaped epitaxial layer backwards to the luminescent layer in the fluorescence ceramics one side of substrate surface light emitting region；
Positioned at the luminescent layer backwards to the p-type epitaxial layer on fluorescence ceramics one side of substrate surface；
Positioned at the p-type epitaxial layer backwards to the p-electrode on fluorescence ceramics one side of substrate surface；
Positioned at the N-shaped epitaxial layer backwards to the n-electrode in the fluorescence ceramics one side of substrate surface electrode region.
2. flip LED chips according to claim 1, which is characterized in that the fluorescent grain is yellow fluorescence particle；Institute
Stating the light that luminescent layer is issued is blue ray.
3. flip LED chips according to claim 1, which is characterized in that the N-shaped epitaxial layer is n-type GaN layer；The p
Type epitaxial layer is p-type GaN layer.
4. flip LED chips according to claim 3, which is characterized in that the flip LED chips further include:
P-type AlGaN layer between the p-type GaN layer and the luminescent layer.
5. flip LED chips according to claim 1, which is characterized in that first table of the fluorescence ceramics substrate
Face is etched with nano graph in advance.
6. flip LED chips according to claim 5, which is characterized in that the substrate of the fluorescence ceramics substrate is oxidation
Aluminium or silicon carbide.
7. flip LED chips according to claim 1, which is characterized in that the flip LED chips further include:
Cover the passivation layer of the N-shaped epitaxial layer side wall, the luminescent layer side wall and the p-type epitaxial layer side wall.
8. flip LED chips according to claim 1, which is characterized in that the luminescent layer is Quantum well active district.
9. according to claim 1 to flip LED chips described in any one of 8 claims, which is characterized in that the flip LED
Chip further include:
Positioned at the p-type epitaxial layer backwards to the specular layer on fluorescence ceramics one side of substrate surface.
10. a kind of preparation method of flip LED chips characterized by comprising
Fluorescent grain and base powder are mixed into precursor powder；
It is sintered the precursor powder and is solidified into fluorescence ceramics substrate；
In the first surface epitaxial growth N-shaped epitaxial layer of the fluorescence ceramics substrate；
In the N-shaped epi-layer surface epitaxial growth luminescent layer；
In the luminous layer surface epitaxial growth p-type epitaxial layer；
The p-type epitaxial layer and the luminescent layer are etched with the electrode zone of the exposure N-shaped epi-layer surface；
P-electrode is set on the p-type epitaxial layer surface, and n-electrode is set in the electrode zone of the N-shaped epi-layer surface, with
The flip LED chips are made.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103748699A (en) * | 2011-08-31 | 2014-04-23 | 旭化成电子材料株式会社 | Optical substrate and semiconductor light-emitting element |
| CN105390583A (en) * | 2015-10-28 | 2016-03-09 | 江苏新广联半导体有限公司 | White light flip chip and preparation method thereof |
| CN106653968A (en) * | 2016-12-12 | 2017-05-10 | 上海芯元基半导体科技有限公司 | III-V nitride growth-used composite substrate, device structure and preparation method |
| CN106784217A (en) * | 2016-12-12 | 2017-05-31 | 上海芯元基半导体科技有限公司 | Compound substrate, semiconductor device structure and preparation method thereof |
| CN208521964U (en) * | 2018-07-27 | 2019-02-19 | 宁波升谱光电股份有限公司 | A kind of flip LED chips |
-
2018
- 2018-07-27 CN CN201810843269.4A patent/CN109004072B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103748699A (en) * | 2011-08-31 | 2014-04-23 | 旭化成电子材料株式会社 | Optical substrate and semiconductor light-emitting element |
| CN105390583A (en) * | 2015-10-28 | 2016-03-09 | 江苏新广联半导体有限公司 | White light flip chip and preparation method thereof |
| CN106653968A (en) * | 2016-12-12 | 2017-05-10 | 上海芯元基半导体科技有限公司 | III-V nitride growth-used composite substrate, device structure and preparation method |
| CN106784217A (en) * | 2016-12-12 | 2017-05-31 | 上海芯元基半导体科技有限公司 | Compound substrate, semiconductor device structure and preparation method thereof |
| CN208521964U (en) * | 2018-07-27 | 2019-02-19 | 宁波升谱光电股份有限公司 | A kind of flip LED chips |
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