CN108994723A - A kind of CMP composite trench polishing pad - Google Patents
A kind of CMP composite trench polishing pad Download PDFInfo
- Publication number
- CN108994723A CN108994723A CN201810875035.8A CN201810875035A CN108994723A CN 108994723 A CN108994723 A CN 108994723A CN 201810875035 A CN201810875035 A CN 201810875035A CN 108994723 A CN108994723 A CN 108994723A
- Authority
- CN
- China
- Prior art keywords
- groove
- polishing pad
- composite trench
- pad substrate
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
Abstract
The invention discloses a kind of CMP composite trench polishing pads, including polishing pad substrate and the rotation center being located among polishing pad substrate, it further include the first groove being provided on polishing pad substrate, second groove and third groove, the first groove and second groove, which are connected to end, constitutes the bionical composite trench of petal.The right-handed screw logarithm shape groove that the first groove is made of at least 2 radius curves along the radial distribution of polishing pad substrate and using rotation center as starting point, using the edge of polishing pad substrate as terminal.The negative spiral logarithm shape groove that the second groove is made of at least 2 reversed radius curves along the radial distribution of polishing pad substrate and using rotation center as starting point, by terminal of the edge of polishing pad substrate.The bionical composite trench of the petal of composition makes polishing fluid transport be evenly distributed, improves the polish removal rate to wafer, and the residence time and convenient useless polishing fluid for extending polishing fluid are discharged, and groove is not in blocking at work.
Description
Technical field
The present invention relates to the field chemically mechanical polishing (CMP), specially a kind of CMP composite trench polishing pad.
Background technique
Chemically-mechanicapolish polishing (chemical mechanical polishing, CMP) is by mechanical abrasive action and chemistry
In conjunction with come a kind of micro-nano processing technology for removing workpiece to be machined surfacing, which can make to be processed work oxidation
The super flat, ultra-smooth in part surface, is mainly used in IC and MEMS manufacturing field.In CMP, the chip of rotation is crushed on rotation
On polishing pad, the polishing fluid containing abrasive grain and chemicals flows between chip and polishing pad, and wafer surface material is in polishing fluid
It is continuously removed under the chemical action and abrasive grain of middle chemicals, the mechanism of polishing pad.Polishing pad plays non-during CMP
Normal important role, the complete composition of polishing pad from top to bottom are substrate, gum, substrate, and substrate is exactly to connect with chip
Grinding and polishing is mainly played in the part of touching, and by substrate together with substrate attaching, substrate mainly plays a supportive role gum.In order to protect
Card polishing fluid has sufficient action time on substrate, it will usually carve out groove on substrate to store polishing fluid, and polish
Pad substrate on groove shape and size directly influence the transport of polishing area polishing fluid, be uniformly distributed, residence time and
The mixing efficiency etc. of new and old polishing fluid, in addition polishing effect is contacted pressure by the relative velocity between chip and polishing pad, surface
The influence of the factors such as power and skin-friction force, and these factors are all related with the groove shape on polishing pad substrate.
Currently, polishing of the groove shape on existing polishing pad substrate based on more single annular shape, to wafer
Removal rate is lower, transport to polishing fluid and to be uniformly distributed ability lower.
Summary of the invention
It is an object of the invention to: be with more single annular shape for groove shape on above-mentioned existing polishing pad substrate
It is main, it is lower to the polish removal rate of wafer, transport to polishing fluid and it is uniformly distributed the lower problem of ability, the present invention provides
A kind of CMP composite trench polishing pad.
The technical solution adopted by the invention is as follows:
A kind of CMP composite trench polishing pad, including polishing pad substrate and the rotation center being located among polishing pad substrate, also
Including the first groove, second groove and third groove being provided on polishing pad substrate, the first groove and second groove head and the tail
It is connected and constitutes the bionical composite trench of petal.
Further, to be by least 2 along the radial distribution of polishing pad substrate and with rotation center be the first groove
The right-handed screw logarithm shape groove that starting point, the radius curve using the edge of polishing pad substrate as terminal form.
Further, the first groove be include 2~8 right-handed screw logarithm shape grooves.
Further, to be by least 2 along the radial distribution of polishing pad substrate and with rotation center be the second groove
The negative spiral logarithm shape groove that starting point, the reversed radius curve by terminal of the edge of polishing pad substrate form.
Further, the second groove be include 2~8 negative spiral logarithm shape grooves.
Further, the first groove, second groove and third groove open up as 0~150 ° of angle.
Further, the first groove, second groove and third groove open up as 0.2~2.0mm width.
Further, the first groove, second groove and third groove open up as 0.5~2.5mm depth.
Further, the third groove is at least two concentric ring-shaped groove using rotation center as the center of circle.
Compared to the prior art, the beneficial effects of the present invention are:
1. the present invention is provided with first groove on polishing pad substrate and second groove is connected to end, to constitute petal bionical
Composite trench makes polishing fluid transport be evenly distributed, higher to the polish removal rate of wafer.
2. the present invention is provided with first groove on polishing pad substrate and second groove is connected to end, to constitute petal bionical
Composite trench, residence time and convenient useless polishing fluid discharge, groove is not in blocking at work.
3. it is a certain range of that the present invention, which is provided with first groove, second groove and third groove on polishing pad substrate and opens up,
Angle, width and depth, make polishing fluid transport distribution, and residence time and the discharge of useless polishing fluid reach optimum state.
Detailed description of the invention
Fig. 1 is the structure chart of CMP composite trench polishing pad of the present invention；
Fig. 2 is the polishing speed datagram of single circular ring type groove polishing pad He composite trench polishing pad of the present invention.
In the figure, it is marked as 1- polishing pad substrate, 101- rotation center, 2- first groove, 3- second groove, 4- third ditch
Slot.
Specific embodiment
All features disclosed in this specification can be with any other than mutually exclusive feature and/or step
Mode combines.
It elaborates below with reference to Fig. 1, Fig. 2 to the present invention.
Embodiment 1
A kind of CMP composite trench polishing pad, including polishing pad substrate 1 and the rotation center being located among polishing pad substrate 1
101, it further include the first groove 2, second groove 3 and third groove 4 being provided on polishing pad substrate 1, the first groove 2 and
Two grooves 3, which are connected to end, constitutes the bionical composite trench of petal.
The bionical composite trench of the petal that first groove 2 and second groove 3 are constituted can make polishing fluid transport distribution equal
Even, residence time and convenient useless polishing fluid discharge, groove is not in blocking at work.
Embodiment 2
On the basis of embodiment 1, further, the first groove 2 is by least 2 along polishing pad base to the present embodiment
The radial distribution of material 1 and be starting point with rotation center 101, the radius curve using the edge of polishing pad substrate 1 as terminal forms
Right-handed screw logarithm shape groove, to have the function that be formed the bionical composite trench of petal.
Embodiment 3
The present embodiment is on the basis of embodiment 2, further, the first groove 2 be include 2~8 right-handed screws
Logarithm shape groove, to have the function that be formed multiple bionical petal-shaped composite trench.
Embodiment 4
On the basis of embodiment 1, further, the second groove 3 is by least 2 along polishing pad base to the present embodiment
The radial distribution of material 1 and using rotation center 101 be starting point, using the edge of polishing pad substrate 1 as the reversed radius curve of terminal
The negative spiral logarithm shape groove of composition, to have the function that be formed the bionical composite trench of petal.
Embodiment 5
The present embodiment is on the basis of embodiment 4, further, the second groove 3 be include 2~8 negative spirals
Logarithm shape groove, to have the function that be formed multiple bionical petal-shaped composite trench.
Embodiment 6
The present embodiment is on the basis of embodiment 1,2 or 4 any one, further, the first groove 2, second groove 3
It opens up with third groove 4 as 0~150 ° of angle, to have the function that convenient for useless polishing fluid discharge.
Embodiment 7
The present embodiment is on the basis of embodiment 1,2 or 4 any one, further, the first groove 2, second groove 3
It opens up with third groove 4 as 0.2~2.0mm width, to have the function that polishing fluid uniformly transports distribution.
Embodiment 8
The present embodiment is on the basis of embodiment 1,2 or 4 any one, further, the first groove 2, second groove 3
It opens up with third groove 4 as 0.5~2.5mm depth, to have the function that extend polishing fluid residence time.
Embodiment 9
The present embodiment is on the basis of any one of Examples 1 to 5, and further, the third groove 4 is with rotation center
101 be at least two concentric ring-shaped groove in the center of circle, and the bionical composite trench of connection petal reaches polishing fluid and preferably transports
The effect of distribution.
Experimental section
Reality is compared to polishing wafer respectively with single circular ring type groove polishing pad and composite trench polishing pad of the present invention
It tests, 4 time points, respectively 0.5h, 2h, 5h, 8h is chosen when experiment, diametrically choose 21 in 3 wafers respectively
The removal rate (Removel Rate, RR) of point test wafer, the average value for finally calculating 3 wafer removal rates obtain data
Figure, as shown in Fig. 2, abscissa is 21 test points diametrically chosen on wafer, ordinate is removal rate, removal
Rate unit is A/min, and BL is using the removal rate of wafer when single circular ring type groove polishing pad, and S is using the present invention
The removal rate of wafer when composite trench polishing pad.
From Fig. 2 data can be seen that single circular ring type groove polishing pad to the polish removal rate of wafer 0.5h,
2h, 5h, 8h are below composite trench polishing pad of the present invention to the polish removal rate of wafer, and it will be evident that single in figure
One circular ring type groove polishing pad is to the polish removal rate inequality of 21 test points on wafer, unstable, big rise and fall, originally
Polish removal rate more average temperature of the invention composite trench polishing pad to 21 test points on wafer.
Claims (9)
1. a kind of CMP composite trench polishing pad including polishing pad substrate (1) and is located in the intermediate rotation of polishing pad substrate (1)
The heart (101), which is characterized in that further include the first groove (2), second groove (3) and third ditch being provided on polishing pad substrate (1)
Slot (4), the first groove (2) and second groove (3) are connected to end and constitute the bionical composite trench of petal.
2. a kind of CMP composite trench polishing pad according to claim 1, which is characterized in that the first groove (2) be by
At least 2 along polishing pad substrate (1) radial distribution and with rotation center (101) be starting point, with the edge of polishing pad substrate (1)
The right-handed screw logarithm shape groove formed for the radius curve of terminal.
3. a kind of CMP composite trench polishing pad according to claim 2, which is characterized in that the first groove (2) is packet
Contain 2~8 right-handed screw logarithm shape grooves.
4. a kind of CMP composite trench polishing pad according to claim 1, which is characterized in that the second groove (3) be by
At least 2 along polishing pad substrate (1) radial distribution and with rotation center (101) be starting point, with the edge of polishing pad substrate (1)
The negative spiral logarithm shape groove formed for the reversed radius curve of terminal.
5. a kind of CMP composite trench polishing pad according to claim 4, which is characterized in that the second groove (3) is packet
Contain 2~8 negative spiral logarithm shape grooves.
6. a kind of according to claim 1,2 or 4 described in any item CMP composite trench polishing pads, which is characterized in that described first
Groove (2), second groove (3) and third groove (4) open up as 0~150 ° of angle.
7. a kind of according to claim 1,2 or 4 described in any item CMP composite trench polishing pads, which is characterized in that described first
Groove (2), second groove (3) and third groove (4) open up as 0.2~2.0mm width.
8. a kind of according to claim 1,2 or 4 described in any item CMP composite trench polishing pads, which is characterized in that described first
Groove (2), second groove (3) and third groove (4) open up as 0.5~2.5mm depth.
9. described in any item a kind of CMP composite trench polishing pads according to claim 1~5, which is characterized in that the third ditch
Slot (4) is at least two concentric ring-shaped groove with rotation center (101) for the center of circle.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810875035.8A CN108994723A (en) | 2018-08-03 | 2018-08-03 | A kind of CMP composite trench polishing pad |
| US16/211,238 US20190105753A1 (en) | 2018-08-03 | 2018-12-06 | CMP composite groove polishing pad |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810875035.8A CN108994723A (en) | 2018-08-03 | 2018-08-03 | A kind of CMP composite trench polishing pad |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108994723A true CN108994723A (en) | 2018-12-14 |
Family
ID=64595106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810875035.8A Pending CN108994723A (en) | 2018-08-03 | 2018-08-03 | A kind of CMP composite trench polishing pad |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20190105753A1 (en) |
| CN (1) | CN108994723A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11813714B2 (en) | 2020-03-13 | 2023-11-14 | Samsung Electronics Co., Ltd. | Chemical mechanical polishing pad and chemical mechanical polishing apparatus including the same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113878491A (en) * | 2021-10-20 | 2022-01-04 | 北京烁科精微电子装备有限公司 | Grinding pad and grinding device with densely distributed branches and leaves and grooves |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001138212A (en) * | 1999-11-15 | 2001-05-22 | Toshiro Doi | Precise polishing apparatus |
| JP2013248693A (en) * | 2012-05-31 | 2013-12-12 | Fujibo Holdings Inc | Polishing pad |
| CN203390717U (en) * | 2013-08-05 | 2014-01-15 | 中芯国际集成电路制造(北京)有限公司 | Polishing pad for chemical mechanical polishing |
| US20160023321A1 (en) * | 2008-03-14 | 2016-01-28 | Robert Kerprich | Grooved cmp pads |
| CN105856063A (en) * | 2016-04-22 | 2016-08-17 | 南京航空航天大学 | Polishing pad for uniform flowing of polishing liquid |
| CN107877360A (en) * | 2016-09-29 | 2018-04-06 | 罗门哈斯电子材料Cmp控股股份有限公司 | Chemical mechanical polishing pads with consistent pad surface microtexture |
-
2018
- 2018-08-03 CN CN201810875035.8A patent/CN108994723A/en active Pending
- 2018-12-06 US US16/211,238 patent/US20190105753A1/en not_active Abandoned
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001138212A (en) * | 1999-11-15 | 2001-05-22 | Toshiro Doi | Precise polishing apparatus |
| US20160023321A1 (en) * | 2008-03-14 | 2016-01-28 | Robert Kerprich | Grooved cmp pads |
| JP2013248693A (en) * | 2012-05-31 | 2013-12-12 | Fujibo Holdings Inc | Polishing pad |
| CN203390717U (en) * | 2013-08-05 | 2014-01-15 | 中芯国际集成电路制造(北京)有限公司 | Polishing pad for chemical mechanical polishing |
| CN105856063A (en) * | 2016-04-22 | 2016-08-17 | 南京航空航天大学 | Polishing pad for uniform flowing of polishing liquid |
| CN105856063B (en) * | 2016-04-22 | 2017-09-15 | 南京航空航天大学 | The polishing pad of polishing fluid Uniform Flow |
| CN107877360A (en) * | 2016-09-29 | 2018-04-06 | 罗门哈斯电子材料Cmp控股股份有限公司 | Chemical mechanical polishing pads with consistent pad surface microtexture |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11813714B2 (en) | 2020-03-13 | 2023-11-14 | Samsung Electronics Co., Ltd. | Chemical mechanical polishing pad and chemical mechanical polishing apparatus including the same |
Also Published As
| Publication number | Publication date |
|---|---|
| US20190105753A1 (en) | 2019-04-11 |
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| Date | Code | Title | Description |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181214 |
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| RJ01 | Rejection of invention patent application after publication |