CN108988796A - A kind of low pressure and low power amplifier and its biasing circuit - Google Patents
A kind of low pressure and low power amplifier and its biasing circuit Download PDFInfo
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- CN108988796A CN108988796A CN201811229431.XA CN201811229431A CN108988796A CN 108988796 A CN108988796 A CN 108988796A CN 201811229431 A CN201811229431 A CN 201811229431A CN 108988796 A CN108988796 A CN 108988796A
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- power amplifier
- biasing circuit
- low pressure
- biasing
- low
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- 239000003990 capacitor Substances 0.000 claims description 9
- 230000005611 electricity Effects 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 12
- 230000001413 cellular effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
Abstract
The present invention provides a kind of low pressure and low power amplifier and its biasing circuit.The biasing circuit includes: the first divider being sequentially connected in series between the input terminal and power ground of the biasing circuit, first diode, the second divider, first divider and the tie point of the first diode are exactly the output end of the biasing circuit, the output end connects the base stage of the low pressure and low power amplifier, it is characterized in that, further include: partial pressure voltage regulator circuit is connected between the output end and the power ground.Present invention improves the performances of power amplifier；And it will not influence the quiescent point of low pressure and low power amplifier；The linear power output of low pressure and low power amplifier under low pressure can be greatly improved using the biasing circuit of this framework.
Description
Technical field
The present invention relates to power amplifier techniques fields, and in particular to a kind of low pressure and low power amplifier and its biasing circuit.
Background technique
NB-IoT (Narrow Band Internet of Things, narrowband Internet of Things) is one of all things on earth internet
Important branch.NB-IoT is implemented in cellular network, only consumes the bandwidth of about 180KHz, can be deployed directly into GSM network
(Global System for Mobile Communications, global system for mobile communications), UMTS network (Universal
Mobile Telecommunications System, Universal Mobile Telecommunications System) or LTE network (Long Term
Evolution, long term evolution), to reduce lower deployment cost, realize smooth upgrade.
NB-IoT is the emerging technology in one, the field IoT, and low power consuming devices is supported to connect in the cellular data of wide area network,
It is regarded as low-power consumption wide area network (LPWAN).NB-IoT supports that stand-by time is long, connecting to the efficient of network connectivity requirements higher device
It connects.It is said that the NB-IoT device battery service life can be improved at least 10 years, while can also provide very comprehensive indoor cellular data
Connection covering.
With the rise of technology of Internet of things and universal, the radio-frequency power amplifier demand applied to NB-IoT is increasingly increased
Greatly.Such NB-IoT radio-frequency power amplifier is more stringent for using time and use environment to have relative to general power amplifier
Requirement.The radio-frequency power amplifier of NB-IOT must have work long hours (longest can be with work for 10 years), under adverse circumstances
The characteristics of work (- 40 degrees Celsius to 85 degrees Celsius), therefore the radio-frequency power amplifier of NB-IoT must have under low pressure
The ability of (1.8V) work.
The use environment of NB-IoT radio frequency amplifier and determine that it must have the spy to work under low pressure using the time
Property.With the increase of rf amplifier output power, the electric current for flowing through biasing circuit will be also gradually increased.Traditional biased electrical
Road is in order to correctly be arranged the quiescent bias point of power amplifier, and biasing resistor resistance value can reach hundred Europe grade, this order of magnitude
Resistance will cause bias voltage reduction under biggish bias current (milliampere grade), and then deteriorate the performance of radio frequency amplifier.
Summary of the invention
The embodiment of the invention provides a kind of biasing circuits of low pressure and low power amplifier, comprising: is sequentially connected in series in institute
State the first divider, first diode, the second divider between the input terminal of biasing circuit and power ground, first partial pressure
Device and the tie point of the first diode are exactly the output end of the biasing circuit, and the output end connects the low pressure and low power
The base stage of amplifier, which is characterized in that further include: partial pressure voltage regulator circuit is connected between the output end and the power ground.
Further, first divider includes biasing resistor.
Further, the biasing resistor is less than or equal to 10 ohm.
Further, second divider includes second resistance.
Further, the partial pressure voltage regulator circuit includes: 3rd resistor, be connected to the output end and the power ground it
Between.
Further, the partial pressure voltage regulator circuit further include: first capacitor, the first capacitor and the 3rd resistor are simultaneously
Connection is connected between the output end and the power ground.
Further, the first capacitor is 2-10pF.
The embodiment of the present invention also provides a kind of low pressure and low power amplifier, including biasing circuit described above.
Further, the base stage of the low pressure and low power amplifier connects the output end of the biasing circuit.
Further, the low pressure and low power amplifier operating voltage is 1.65-1.95V.
The technical solution that the embodiment of the present invention provides, improves the performance of power amplifier；And it will not influence power amplifier
Quiescent point；The linear convergent rate function of radio-frequency power amplifier under low pressure can be greatly improved using the biasing circuit of this framework
Rate.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of biasing circuit composition schematic diagram of traditional low pressure and low power amplifier；
Fig. 2 is a kind of biasing circuit composition schematic diagram for low pressure and low power amplifier that one embodiment of the invention provides；
Fig. 3 be another embodiment of the present invention provides a kind of low pressure and low power amplifier biasing circuit composition schematic diagram；
Fig. 4 is the low pressure and low power amplifier output work of the biasing circuit using conventional bias circuit and using Fig. 3 of the present invention
Rate linearity contrast schematic diagram；
Fig. 5 is a kind of low pressure and low power amplifier composition schematic diagram that one embodiment of the invention provides；
Fig. 6 be another embodiment of the present invention provides a kind of low pressure and low power amplifier composition schematic diagram.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below with reference to drawings and examples,
The specific embodiment progress of technical solution of the present invention in further detail, is clearly illustrated.However, specific implementations described below
Mode and embodiment are for illustrative purposes only, rather than limiting the invention.It only contains a part of the invention and implements
Example, instead of all the embodiments, the other embodiments that those skilled in the art obtain various change of the invention all belong to
In the scope of protection of the invention.
Although it should be understood that the first, second, third, etc. term can be used in this article be used to describe various elements or
Component, but these elements or component should not be limited by these terms.These terms only to distinguish an element or component with
Another element or component.Therefore, the first element or component of following the discussion, holds within the present invention not departing from, is referred to alternatively as
Second element or the second component.
Fig. 1 is a kind of biasing circuit composition schematic diagram of traditional low pressure NB-IOT power amplifier, including biasing resistor
R11, first diode D11, second resistance R12.
Biasing resistor R11, first diode D11, second resistance R12 are sequentially connected in series the input terminal in biasing circuit
Between P11 and power ground, the tie point of biasing resistor R11 and first diode D11 are exactly the output end P12 of biasing circuit, defeated
The base stage of outlet P12 connection low pressure and low power amplifier.
For correct bias low pressure and low power amplifier, biasing resistor R11 needs to be arranged to 100 ohm, output port P12's
Voltage is the power amplifier offset voltage that we need.When the output power of power amplifier is gradually increased, the electricity of biasing resistor R11 is flowed through
Stream can be gradually increased, and the bias voltage of output port P12 can gradually decrease, to affect the working condition of power amplifier, be degrading
The performance of power amplifier.
Fig. 2 is a kind of biasing circuit composition schematic diagram for low pressure and low power amplifier that one embodiment of the invention provides, including
First divider, first diode D21, the second divider, partial pressure voltage regulator circuit.
First divider, first diode D21, the second divider are sequentially connected in series input terminal and electricity in biasing circuit
Between the ground of source, the tie point of the first divider and first diode is exactly the output end of biasing circuit, and output end connects low pressure function
The base stage of rate amplifier.Voltage regulator circuit is divided, is connected between output end and power ground.
First divider includes biasing resistor R21.Second divider includes second resistance R22.Dividing voltage regulator circuit includes
3rd resistor R23.
Biasing resistor R21, first diode D21, second resistance R22 are sequentially connected in series the input terminal in biasing circuit
Between P21 and power ground, the tie point of biasing resistor R21 and first diode D21 are exactly the output end P22 of biasing circuit, defeated
The base stage of outlet P22 connection low pressure and low power amplifier, 3rd resistor R23 are connected between output end P22 and power ground.Output end
The voltage of mouth P22 is the power amplifier offset voltage that we need.
The biasing circuit of the present embodiment, when biasing same bias voltage, since the partial pressure of 3rd resistor R23 acts on,
Biasing resistor R21 can be arranged within 10 ohm, when the electric current for flowing through biasing resistor R21 increases, due to biasing resistor
The resistance of R21 itself reduces, and thus bring pressure drop is greatly reduced, so as to improve the performance of power amplifier.
Fig. 3 be another embodiment of the present invention provides a kind of low pressure and low power amplifier biasing circuit composition schematic diagram, packet
Include the first divider, first diode D31, the second divider, partial pressure voltage regulator circuit.
First divider, first diode D31, the second divider are sequentially connected in series input terminal and electricity in biasing circuit
Between the ground of source, the tie point of the first divider and first diode is exactly the output end of biasing circuit, and output end connects low pressure function
The base stage of rate amplifier.Voltage regulator circuit is divided, is connected between output end and power ground.
First divider includes biasing resistor R31.Second divider includes second resistance R32.Dividing voltage regulator circuit includes
3rd resistor R33 and first capacitor C31.
Biasing resistor R31, first diode D31, second resistance R32 are sequentially connected in series the input terminal in biasing circuit
Between P31 and power ground, the tie point of biasing resistor R31 and first diode D31 are exactly the output end P32 of biasing circuit, defeated
The base stage of outlet P32 connection low pressure NB-IOT power amplifier, 3rd resistor R33 and first capacitor C31 are connected in output in parallel
It holds between P32 and power ground.The voltage of output port P32 is the power amplifier offset voltage that we need.
The biasing circuit of the present embodiment, when biasing same bias voltage, since the partial pressure of 3rd resistor R33 acts on,
Biasing resistor R31 can be arranged within 10 ohm, when the electric current for flowing through biasing resistor R31 increases, due to biasing resistor
The resistance of R31 itself reduces, and thus bring pressure drop is greatly reduced, and due to the pressure stabilization function of first capacitor C31, is made defeated
Outlet voltage is more stable, so as to improve the performance of power amplifier.
Fig. 4 is using conventional bias circuit and using the low pressure and low power amplifier output power of Fig. 3 biasing circuit of the present invention
Linearity contrast schematic diagram.
Effect of the biasing circuit in amplifier circuit is to give amplifier correct biased operating voltage, offset operation electricity
The stabilization of pressure or not it is directly related to the working condition of amplifier.Biased operating voltage once shifts, the performance of amplifier
It will deteriorate.
As shown in figure 4, abscissa is the output power of amplifier, ordinate is amplifier gain.From the point of view of emulation, 41 are
The curve changed using the amplifier gain of the radio-frequency power amplifier of new biasing circuit with output power, 42 is using general
The curve that the amplifier gain of the radio-frequency power amplifier of biasing circuit changes with output power.
Using the radio-frequency power amplifier of general biasing circuit, with the increase of output power, its amplifier gain is pressed
Contracting, and use new biasing circuit radio-frequency power amplifier with output power increase its amplifier gain the linearity more
It is good.
Fig. 5 is a kind of low pressure and low power amplifier composition schematic diagram that one embodiment of the invention provides.
As shown in figure 5, low pressure and low power amplifier 1 includes the biasing circuit of above-mentioned Fig. 2, the base stage of low pressure and low power amplifier connects
The output end P22 of biasing circuit is met, which is 1.65-1.95V.
Fig. 6 be another embodiment of the present invention provides a kind of low pressure and low power amplifier composition schematic diagram.
As shown in fig. 6, low pressure and low power amplifier 2 includes the biasing circuit of above-mentioned Fig. 3, the base stage of low pressure and low power amplifier connects
The output end P32 of biasing circuit is met, which is 1.65-1.95V.
Determine that it must have under low pressure due to the use environment of NB-IoT radio-frequency power amplifier and using the time
The characteristic of work, so biasing circuit of the invention is applied to NB-IoT radio-frequency power amplifier, effect is more preferable.
It should be noted that each embodiment above by reference to described in attached drawing is only to illustrate the present invention rather than limits this
The range of invention, those skilled in the art should understand that, it is right under the premise without departing from the spirit and scope of the present invention
The modification or equivalent replacement that the present invention carries out, should all cover within the scope of the present invention.In addition, signified unless the context
Outside, the word occurred in the singular includes plural form, and vice versa.In addition, unless stated otherwise, then any embodiment
All or part of in combination with any other embodiment all or part of come using.
Claims (10)
1. a kind of biasing circuit of low pressure and low power amplifier, comprising: be sequentially connected in series the biasing circuit input terminal and
The first divider, first diode, the second divider between power ground, first divider and the first diode
Tie point is exactly the output end of the biasing circuit, and the output end connects the base stage of the low pressure and low power amplifier, feature
It is, further includes:
Voltage regulator circuit is divided, is connected between the output end and the power ground.
2. biasing circuit according to claim 1, which is characterized in that first divider includes biasing resistor.
3. biasing circuit according to claim 2, which is characterized in that the biasing resistor is less than or equal to 10 ohm.
4. biasing circuit according to claim 1, which is characterized in that second divider includes second resistance.
5. biasing circuit according to claim 4, which is characterized in that the partial pressure voltage regulator circuit includes:
3rd resistor is connected between the output end and the power ground.
6. biasing circuit according to claim 5, which is characterized in that the partial pressure voltage regulator circuit further include:
First capacitor, the first capacitor and the 3rd resistor are connected in parallel between the output end and the power ground.
7. biasing circuit according to claim 6, which is characterized in that the first capacitor is 2-10pF.
8. a kind of low pressure and low power amplifier, which is characterized in that including the described in any item biasing circuits of claim 1 to 7.
9. low pressure and low power amplifier according to claim 8, which is characterized in that the base stage of the low pressure and low power amplifier connects
Connect the output end of the biasing circuit.
10. low pressure and low power amplifier according to claim 8, which is characterized in that the low pressure and low power amplifier operation electricity
Pressure is 1.65-1.95V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811229431.XA CN108988796A (en) | 2018-10-22 | 2018-10-22 | A kind of low pressure and low power amplifier and its biasing circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811229431.XA CN108988796A (en) | 2018-10-22 | 2018-10-22 | A kind of low pressure and low power amplifier and its biasing circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108988796A true CN108988796A (en) | 2018-12-11 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811229431.XA Pending CN108988796A (en) | 2018-10-22 | 2018-10-22 | A kind of low pressure and low power amplifier and its biasing circuit |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4290026A (en) * | 1978-07-25 | 1981-09-15 | Nippon Electric Co., Ltd. | Power amplifier whose bias voltage changes depending on power supply voltage |
| CN2069550U (en) * | 1989-12-23 | 1991-01-16 | 沈阳冶炼厂 | Dynamic state testing device for electromechanical equipment |
| CN2101355U (en) * | 1991-08-26 | 1992-04-08 | 荆门市曾集镇职业高级中学 | Device for controlling colour lamp by radio music |
| CN1926759A (en) * | 2004-01-05 | 2007-03-07 | 日本电气株式会社 | Amplifier |
| US20080116977A1 (en) * | 2006-10-31 | 2008-05-22 | Sang Hwa Jung | Voltage supply insensitive bias circuits |
| CN208939904U (en) * | 2018-10-22 | 2019-06-04 | 深圳飞骧科技有限公司 | A kind of low pressure and low power amplifier and its biasing circuit |
-
2018
- 2018-10-22 CN CN201811229431.XA patent/CN108988796A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4290026A (en) * | 1978-07-25 | 1981-09-15 | Nippon Electric Co., Ltd. | Power amplifier whose bias voltage changes depending on power supply voltage |
| CN2069550U (en) * | 1989-12-23 | 1991-01-16 | 沈阳冶炼厂 | Dynamic state testing device for electromechanical equipment |
| CN2101355U (en) * | 1991-08-26 | 1992-04-08 | 荆门市曾集镇职业高级中学 | Device for controlling colour lamp by radio music |
| CN1926759A (en) * | 2004-01-05 | 2007-03-07 | 日本电气株式会社 | Amplifier |
| US20080116977A1 (en) * | 2006-10-31 | 2008-05-22 | Sang Hwa Jung | Voltage supply insensitive bias circuits |
| CN208939904U (en) * | 2018-10-22 | 2019-06-04 | 深圳飞骧科技有限公司 | A kind of low pressure and low power amplifier and its biasing circuit |
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Address after: 518000 1601, building 1, shuimuyifang building, No. 286, Nanguang Road, dawangshan community, Nantou street, Nanshan District, Shenzhen, Guangdong Applicant after: Shenzhen Feiyu Technology Co.,Ltd. Address before: 518057 318, 3F, building B, Guoren building, kejizhong Third Road, Science Park, Yuehai street, Nanshan District, Shenzhen City, Guangdong Province Applicant before: LANSUS TECHNOLOGIES Inc. |