CN108983512A - Thin-film transistor array base-plate and liquid crystal display panel - Google Patents
Thin-film transistor array base-plate and liquid crystal display panel Download PDFInfo
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- CN108983512A CN108983512A CN201810954958.2A CN201810954958A CN108983512A CN 108983512 A CN108983512 A CN 108983512A CN 201810954958 A CN201810954958 A CN 201810954958A CN 108983512 A CN108983512 A CN 108983512A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
Abstract
The present invention discloses a kind of thin-film transistor array base-plate and liquid crystal display panel, the thin-film transistor array base-plate includes substrate, thin film transistor (TFT), public electrode and pixel electrode, thin-film transistor array base-plate further includes being limited to form multiple pixel units by scan line and data line, thin film transistor (TFT) includes grid, semiconductor layer, source electrode and drain electrode, the first notch and the second notch are offered on the pixel electrode of each pixel unit, so that pixel electrode and the coupled capacitor of the data line close to the first side of this pixel unit and the coupled capacitor of pixel electrode and the data line close to this pixel unit second side are of substantially equal.Thin-film transistor array base-plate and liquid crystal display panel provided by the invention, by opening up notch on the pixel electrode, coupled capacitor between so entire pixel electrode and two sides data line is with regard to of substantially equal, to keep two sides data line essentially identical to the coupled voltages of pixel electrode, to avoid or weaken crosstalk phenomenon.
Description
Technical field
The present invention relates to technical field of liquid crystal display, more particularly to a kind of thin-film transistor array base-plate and liquid crystal display
Panel.
Background technique
Liquid crystal display panel have image quality is good, small in size, light-weight, low driving voltage, low-power consumption, radiationless and manufacture at
This relatively low advantage is occupied an leading position in flat display field.
Liquid crystal display on existing market is largely backlight liquid crystal display comprising liquid crystal display panel and back
Optical mode group.The working principle of liquid crystal display panel is that liquid crystal point is poured between thin-film transistor array base-plate and color membrane substrates
Son, and apply driving voltage to control the direction of rotation of liquid crystal molecule, by the light refraction of backlight module on two plate bases
Picture is generated out.
Array substrate includes a plurality of grid line and data line, and orthogonal a plurality of grid line and multiple data lines form
Multiple pixel units, and thin film transistor (TFT), pixel electrode and storage capacitance etc. are provided in each pixel unit.Work as grid line
When being driven, thin film transistor (TFT) is in the conductive state, and gray scale voltage signal is sent under corresponding data and is loaded into pixel
Electrode, so that generating corresponding electric field between pixel electrode and public electrode, the liquid crystal molecule in liquid crystal layer is then in electric field
Under the action of change in orientation occurs, shown with the image for realizing different.
Crosstalk phenomenon would generally occur for available liquid crystal display panel, as shown in figure 4, due to the presence of crosstalk phenomenon, a-quadrant
There are apparent luminance differences with B area.
Summary of the invention
The object of the present invention is to provide thin-film transistor array base-plates and LCD display that one kind can improve crosstalk phenomenon
Plate.
The embodiment of the present invention provides a kind of thin-film transistor array base-plate, including substrate, thin film transistor (TFT), public electrode and
Pixel electrode, the thin film transistor (TFT), the public electrode and the pixel electrode are set on the substrate, and the common electrical
Insulation gap is arranged between pole and the pixel electrode, and the thin-film transistor array base-plate further includes by scan line and data line
Restriction forms multiple pixel units, and the thin film transistor (TFT) includes grid, semiconductor layer, source electrode and drain electrode, and the grid is set to
On the substrate, the source electrode and the drain electrode are set on the semiconductor layer and contact with the semiconductor layer, the source electrode
It is spaced apart from each other setting with the drain electrode, wherein the drain electrode is electrically connected with the pixel electrode, the grid and the scanning
Line is electrically connected, the source electrode and the data line electrical connection, and the is offered on the pixel electrode of each pixel unit
One notch and the second notch, so that the coupled capacitor and institute of the pixel electrode and the data line of close the first side of this pixel unit
The coupled capacitor for stating pixel electrode and the data line close to this pixel unit second side is of substantially equal.
Preferably, first notch and second notch are opened in the edge of the pixel electrode.
Preferably, the data line close to the first side of the pixel unit is adjacent with first notch, close to institute
The data line for stating second side of pixel unit is adjacent with second notch, with the source electrode electricity in each pixel unit
Property connection the data line close to second side of the pixel unit, the length of second notch is equal to first notch
Length, and the edge of first notch and the distance between described data line close to the first side are less than second notch
Edge and close to second side the distance between the data line.
Preferably, the distance between the edge of first notch and described data line of close first side are equal to the leakage
The distance between pole and the source electrode, the length of first notch are equal to the drain electrode and make with the source electrode with capacitive coupling
With the length of position, there is no capacitive coupling effect between the edge and the data line of second notch.
Preferably, the distance between the edge of first notch and described data line of close first side are less than the leakage
The distance between pole and the source electrode, the length of first notch are equal to the drain electrode and make with the source electrode with capacitive coupling
With the length of position, there are capacitive coupling effects between the edge and the data line of second notch.
Preferably, the thin film transistor (TFT) of each pixel unit is provided close to the pixel electrode in this pixel unit
First end position, first notch and second notch are located at first of the pixel electrode in this pixel unit
End.
The present invention also provides a kind of thin-film transistor array base-plates, including substrate, thin film transistor (TFT), public electrode and pixel
Electrode, the thin film transistor (TFT), the public electrode and the pixel electrode be set to the substrate on, and the public electrode and
Insulation gap is arranged between the pixel electrode, and the thin-film transistor array base-plate further includes being limited by scan line and data line
Multiple pixel units are formed, the thin film transistor (TFT) includes grid, semiconductor layer, source electrode and drain electrode, and the grid is set to described
On substrate, the source electrode and the drain electrode are set on the semiconductor layer and contact with the semiconductor layer, the source electrode and institute
It states drain electrode and is spaced apart from each other setting, wherein the drain electrode is electrically connected with the pixel electrode, the grid and scan line electricity
Property connection, the source electrode and the data line electrical connection offer second on the pixel electrode of each pixel unit and lack
Mouthful, so that the coupled capacitor and the pixel electrode of the pixel electrode and the data line of close the first side of this pixel unit
It is of substantially equal with the coupled capacitor of the data line close to this pixel unit second side.
Preferably, second notch is opened in the edge of the pixel electrode.
Preferably, the thin film transistor (TFT) of each pixel unit is provided close to of the pixel electrode in this pixel unit
The position of one end, second notch are located at the first end of the pixel electrode in this pixel unit.
The embodiment of the present invention also provides a kind of liquid crystal display panel, including above-mentioned thin-film transistor array base-plate, color film base
Plate and the liquid crystal layer between thin-film transistor array base-plate and color membrane substrates.
Thin-film transistor array base-plate and liquid crystal display panel provided by the invention, it is scarce by opening up on the pixel electrode
Mouthful, then the coupled capacitor between entire pixel electrode and two sides data line is with regard to of substantially equal, to make two sides data line pair
The coupled voltages of pixel electrode are essentially identical, to avoid or weaken crosstalk phenomenon.
Detailed description of the invention
Fig. 1 is a kind of schematic cross-sectional view of thin-film transistor array base-plate；
Fig. 2 is the planar structure schematic diagram of thin-film transistor array base-plate shown in Fig. 1；
Fig. 3 is the floor map of a pixel unit of thin-film transistor array base-plate shown in Fig. 1；
Fig. 4 is the drive waveforms figure of the data line of thin-film transistor array base-plate shown in Fig. 1；
Fig. 5 is thin-film transistor array base-plate crosstalk display effect schematic diagram shown in Fig. 1 shown in Fig. 1；
Fig. 6 is the schematic cross-sectional view of the thin-film transistor array base-plate of first embodiment of the invention；
Fig. 7 is the planar structure schematic diagram of thin-film transistor array base-plate shown in Fig. 6；
Fig. 8 is the schematic cross-sectional view figure of the thin-film transistor array base-plate of second embodiment of the invention；
Fig. 9 is the schematic cross-sectional view of the thin-film transistor array base-plate of third embodiment of the invention；
Figure 10 is the schematic cross-sectional view of the thin-film transistor array base-plate of fourth embodiment of the invention；
Figure 11 is the structural schematic diagram of the liquid crystal display panel of one embodiment of the invention.
Specific embodiment
It is of the invention to reach the technical approach and effect that predetermined goal of the invention is taken further to illustrate, below in conjunction with
Accompanying drawings and embodiments, to a specific embodiment of the invention, structure, feature and its effect, detailed description is as follows.
As shown in Figure 1 to Figure 3, a kind of thin-film transistor array base-plate includes substrate 11, the protection of thin film transistor (TFT) 13, first
Layer 15, public electrode 16, the second protective layer 17 and pixel electrode 18, thin film transistor (TFT) 13 are set on substrate 11, the first protective layer
15 are covered on thin film transistor (TFT) 13, and public electrode 16 is set on the first protective layer 15, and the second protective layer 17 covers public electrode
16, pixel electrode 18 is set on the second protective layer 17.The thin-film transistor array base-plate further includes by scan line 19 and data line
20 restrictions form multiple pixel unit P.Thin film transistor (TFT) 13 includes grid 132, semiconductor layer 134, source electrode 136 and drain electrode 138,
Grid 132 is set on substrate 11, and source electrode 136 and drain electrode 138 are set on semiconductor layer 134 and contact with semiconductor layer 134, source electrode
136 are spaced apart from each other setting with drain electrode 138, wherein drain electrode 138 is electrically connected with pixel electrode 18, grid 132 and 19 electricity of scan line
Property connection, source electrode 136 and data line 20 are electrically connected.The grid 132 of thin film transistor (TFT) 13 is equipped with passivation layer 139, semiconductor
Layer 134 is set on the passivation layer 139.
Find after study, due near 16 right side thin film transistor (TFT) of pixel electrode between source electrode 136 and data line 20
There are coupled capacitors, and left side does not have, therefore coupled capacitor and pixel electrode between pixel electrode 16 and left data line 20
Coupled capacitor between 16 and right side data line 20 is different, to will lead to left and right sides data line to the coupled voltages of pixel electrode
Difference, so as to cause the appearance of crosstalk phenomenon.Specifically, when the drive waveforms of data line are waveform shown in Fig. 4, pixel electrode
With the coupled capacitor Cdp=0.66fF of left data line, the coupled capacitor Cdp=0.78fF of pixel electrode and right side data line,
Left side negative polarity data line lies prostrate (its to coupled voltages V1=(- 4.28- (- 1.86)) the * 0.66/145=-0.011 of pixel electrode
In, 145 be the storage capacitance in pixel unit), coupled voltages V2=(4.32- of the right side positive polarity data line to pixel electrode
1.92) * 0.78/145=-0.013 volt (wherein, 145 be the storage capacitance in pixel unit), V1 and V2 have differed 2mV, therefore
Result in the appearance of crosstalk phenomenon.Crosstalk phenomenon generate when image display effect referring to Fig. 5, the area A and the area B have towards brightness
Difference.
First embodiment
Fig. 6 is the schematic diagram of the section structure of the thin-film transistor array base-plate of first embodiment of the invention；Fig. 7 is Fig. 6 institute
Show the planar structure schematic diagram of thin-film transistor array base-plate.As shown in Figure 5 and Figure 6, in the present embodiment, thin film transistor (TFT) array
Substrate includes substrate 31, thin film transistor (TFT) 33, the first protective layer 35, public electrode 36, the second protective layer 37 and pixel electrode 38,
Thin film transistor (TFT) 33 is set on substrate 31, and the first protective layer 35 is covered on thin film transistor (TFT) 33, and public electrode 36 is set to first
On protective layer 35, the second protective layer 37 covers public electrode 36, and pixel electrode 38 is set on the second protective layer 37.The film crystal
Pipe array substrate further includes being limited to form multiple pixel unit P by scan line 39 and data line 403, is set in each pixel unit P
There are a pixel electrode 38 and a thin film transistor (TFT) 33.Thin film transistor (TFT) 33 includes grid 332, semiconductor layer 334, source electrode
336 and drain electrode 338, grid 332 be set to substrate 31 on, source electrode 336 and drain electrode 338 be set to semiconductor layer 334 on simultaneously and semiconductor
Layer 334 contacts, and source electrode 336 and drain electrode 338 are spaced apart from each other setting, wherein drain electrode 338 is electrically connected with pixel electrode 38, grid
332 are electrically connected with scan line 39, and source electrode 336 and data line 40 are electrically connected.The grid 332 of thin film transistor (TFT) is equipped with passivation
Layer 339, semiconductor layer 334 are set on the passivation layer 339.Specifically, the pixel electrode 38 in each pixel unit P passes through contact
Corresponding drain electrode 338 is electrically connected in Kong Yuben pixel unit P.
In the present embodiment, the thin film transistor (TFT) of each pixel unit P is provided close to the pixel electrode 38 in this pixel unit P
First end position, the first side of the first end of the pixel electrode 38 in this pixel unit P offers the first notch 382, with
The opposite second side in first side offers the second notch 384, and the edge of the first notch 382 and the data line 40 close to the first side
The distance between W1 be equal to drain electrode the distance between 338 and source electrode 336 W2 (width of W2, that is, thin film transistor (TFT) channel), first
The length L1 of notch 382 is equal to the length L2 that drain electrode 338 has capacitive coupling active position with source electrode 336, the second notch 384
Between the distance between edge and the data line 40 of close second side larger edge and data line 40 for making the second notch 384 W3
There is no capacitive coupling effect, the distance between the edge of the first notch 382 and the data line 40 of close first side W1 are less than second
The distance between the edge of notch 384 and the data line 40 of close second side W3, the length L3 of the second notch 384 are equal to first and lack
The length L1 of mouth 382.
By opening up the first notch 382 and the second notch 384 on pixel electrode 38, so that the edge of the first notch 382
Just it is equal to coupled capacitor between source electrode 336 and drain electrode 338 the coupled capacitor between the data line 40 of the first side, and the
The setting of two notches 384 is so that second side of pixel electrode 38 and the coupled capacitor of data line 40 reduce, that is to say, that I in Fig. 6
The coupled capacitor at place is equal to the coupled capacitor at II, and the coupled capacitor at III is essentially 0, then entire pixel electrode 38 and two
Coupled capacitor between side data line 40 is with regard to of substantially equal, to make left and right sides data line 40 to the coupling electricity of pixel electrode 38
Press it is essentially identical, to avoid or weaken crosstalk phenomenon.Specifically, the coupled capacitor of pixel electrode 38 and left data line 40
Cdp=0.75fF, the coupled capacitor Cdp=0.78fF of pixel electrode 38 and right side data line 40, left side negative polarity data line 40
To the coupled voltages of pixel electrode 38
(wherein, 145 be the storage electricity in pixel unit to V3=(- 4.28- (- 1.86)) * 0.75/145=-0.0125 volt
Hold), coupled voltages of the right side positive polarity data line 40 to pixel electrode 38
V4=(4.32-1.92) * 0.78/145=-0.013 volt (wherein, 145 be the storage capacitance in pixel unit), V3
0.5mV has been differed only by with V4, has reduced crosstalk phenomenon significantly.
In the present embodiment, the distance between the edge due to the first notch 382 and the data line 40 close to the first side W1 etc.
In drain electrode the distance between 338 and source electrode 336 W2, the length L1 of the first notch 382, which is equal to drain electrode 338 and source electrode 336, has electricity
Hold the length L2 of coupling position, the distance between the edge of the second notch 384 and the data line 40 of close second side W3 make
Obtaining does not have capacitive coupling effect between the edge and data line 40 of the second notch 384, the edge of the first notch 382 and close first
Edge of the distance between the data line 40 of the side W1 less than the second notch 384 and the distance between the data line 40 close to second side
W3, therefore the size of the coupled capacitor at I, at II and at III can be controlled very accurately, manufacture can be controlled more conveniently
Coupled capacitor size in the process guarantees the control effect to crosstalk phenomenon.
In other embodiments, the first notch 382 can be made of multiple sub- notches, and the second notch 384 can also be by multiple sons
Notch composition, only needs its overall size to meet related request.
Second embodiment
As shown in figure 8, the thin-film transistor array base-plate of second embodiment and the thin film transistor (TFT) array of first embodiment
The structure of substrate is substantially similar, and difference is, the second notch 384 is only opened up on the pixel electrode 38 of second embodiment, is not opened up
First notch 382 reduces the coupled capacitor of 38 second side of pixel electrode by opening up the second notch 384, and makes reduced coupling
Capacitor is substantially equal to coupled capacitor between source electrode 336 and drain electrode 338.
3rd embodiment
As shown in figure 9, the thin-film transistor array base-plate of 3rd embodiment and the thin film transistor (TFT) array of first embodiment
The structure of substrate is substantially similar, and difference is, the first notch 382 and second opened up on the pixel electrode 38 of 3rd embodiment lacks
The size of mouth 384 is different from the first embodiment, the edge of the first notch 382 and the distance between the data line 40 close to the first side
W1 is less than drain electrode the distance between 338 and source electrode 336 W2, and the length L1 of the first notch 382 is equal to drain electrode 338 to be had with source electrode 336
There is the length L2 of capacitive coupling active position, there are capacitive coupling effect between the edge and data line 40 of the second notch 384,
The edge of one notch 382 and close to the first side the distance between data line 40 W1 less than the edge of the second notch 384 with it is close
The distance between the data line 40 of second side W3, the length L3 of the second notch 384 are equal to the length L1 of the first notch 382.In this way,
Coupled capacitor at I is greater than the coupled capacitor at II, and the coupled capacitor at III substantially corresponds to the coupling electricity at I and at II
The difference held.Compared to first embodiment, the present embodiment is more difficult to control to the size of coupled capacitor, can obtain preferable the by experiment
The size of one notch 382 and the second notch 384.
Fourth embodiment
As shown in Figure 10, the thin film transistor (TFT) array of the thin-film transistor array base-plate of fourth embodiment and first embodiment
The structure of substrate is substantially similar, and difference is, the first notch 382 and second opened up on the pixel electrode 38 of fourth embodiment lacks
The position of mouth 384 is different from the first embodiment, and in the present embodiment, the first notch 382 and the second notch 384 are opened in pixel electrode
38 second end opposite with first end.It is appreciated that the first notch 382 and the second notch 384 can also be opened in pixel electrode
38 middle part, that is to say, that the first notch 382 and the second notch 384 are unrestricted in the position of the first side and second side.
5th embodiment
As shown in figure 11, invention additionally discloses a kind of liquid crystal display panels comprising above-mentioned thin-film transistor array base-plate,
Color membrane substrates 50 and the liquid crystal layer 70 between thin-film transistor array base-plate and color membrane substrates 50.
The above is only presently preferred embodiments of the present invention, are not intended to limit the present invention in any form, although this
Invention has been disclosed in a preferred embodiment above, and however, it is not intended to limit the invention, any person skilled in the art,
It does not depart within the scope of technical solution of the present invention, when the technology contents using the disclosure above make a little change or are modified to equivalent
The equivalent embodiment of variation, but without departing from the technical solutions of the present invention, according to the technical essence of the invention to the above reality
Any simple modification, equivalent change and modification made by example are applied, all of which are still within the scope of the technical scheme of the invention.
Claims (10)
1. a kind of thin-film transistor array base-plate, including substrate (31), thin film transistor (TFT) (33), public electrode (36) and pixel electricity
Pole (38), the thin film transistor (TFT) (33), the public electrode (36) and the pixel electrode (38) are set to the substrate (31)
On, and insulation gap is arranged between the public electrode (36) and the pixel electrode (38), the thin film transistor (TFT) array base
Plate further includes being limited to be formed multiple pixel units (P) by scan line (39) and data line (40), thin film transistor (TFT) (33) packet
Grid (332), semiconductor layer (334), source electrode (336) and drain electrode (338) are included, the grid (332) is set to the substrate (31)
On, the source electrode (336) and the drain electrode (338) are set on the semiconductor layer (334) and connect with the semiconductor layer (334)
Touching, the source electrode (336) and the drain electrode (338) are spaced apart from each other setting, wherein the drain electrode (338) and the pixel electrode
(38) it is electrically connected, the grid (332) and the scan line (39) are electrically connected, the source electrode (336) and the data line
(40) it is electrically connected, which is characterized in that offer the first notch on the pixel electrode (38) of each pixel unit (P)
, (382) and the second notch (384) so that the pixel electrode (38) and the data line (40) close to the first side of this pixel unit
The basic phase of coupled capacitor of data line (40) of the coupled capacitor with the pixel electrode (38) and close to this pixel unit second side
Deng.
2. thin-film transistor array base-plate as described in claim 1, which is characterized in that first notch (382) and described
Second notch (384) is opened in the edge of the pixel electrode (38).
3. thin-film transistor array base-plate as claimed in claim 2, which is characterized in that close to the of the pixel unit (P)
The data line (40) of side is adjacent with first notch (382), close to the pixel unit (P) second side it is described
Data line is adjacent with second notch (384), the institute being electrically connected with the source electrode (336) in each pixel unit (P)
State the second side of data line (40) close to the pixel unit (P), the length (L3) of second notch (384) is equal to described the
The length (L1) of one notch (382), and the edge of first notch (382) and close to the first side the data line (40) it
Between distance (W1) be less than second notch (384) edge and close to second side the distance between the data line (40)
(W3)。
4. thin-film transistor array base-plate as claimed in claim 3, which is characterized in that the edge of first notch (382)
With the distance between the data line (40) (W1) close to the first side be equal to the drain electrode (338) and the source electrode (336) it
Between distance (W2), the length (L1) of first notch (382) is equal to the drain electrode (338) to be had with the source electrode (336)
The length (L2) of capacitive coupling active position, without electricity between the edge and the data line (40) of second notch (384)
Hold coupling.
5. thin-film transistor array base-plate as claimed in claim 3, which is characterized in that the edge of first notch (382)
With the distance between the data line (40) (W1) close to the first side be less than the drain electrode (338) and the source electrode (336) it
Between distance (W2), the length (L1) of first notch (382) is equal to the drain electrode (338) to be had with the source electrode (336)
There is electricity between the edge and the data line (40) of second notch (384) in the length (L2) of capacitive coupling active position
Hold coupling.
6. thin-film transistor array base-plate as described in claim 1, which is characterized in that each pixel unit (P) it is described thin
Film transistor is provided close to the position of the first end of the pixel electrode (38) in this pixel unit (P), first notch
It is located at the first end of the pixel electrode (38) in this pixel unit (P) with second notch.
7. a kind of thin-film transistor array base-plate, including substrate (31), thin film transistor (TFT) (33), public electrode (36) and pixel electricity
Pole (38), the thin film transistor (TFT) (33), the public electrode (36) and the pixel electrode (38) are set to the substrate (31)
On, and insulation gap is arranged between the public electrode (36) and the pixel electrode (38), the thin film transistor (TFT) array base
Plate further includes being limited to be formed multiple pixel units (P) by scan line (39) and data line (40), thin film transistor (TFT) (33) packet
Grid (332), semiconductor layer (334), source electrode (336) and drain electrode (338) are included, the grid (332) is set to the substrate (31)
On, the source electrode (336) and the drain electrode (338) are set on the semiconductor layer (334) and connect with the semiconductor layer (334)
Touching, the source electrode (336) and the drain electrode (338) are spaced apart from each other setting, wherein the drain electrode (338) and the pixel electrode
(38) it is electrically connected, the grid (332) and the scan line (39) are electrically connected, the source electrode (336) and the data line
(40) it is electrically connected, which is characterized in that offer the second notch on the pixel electrode (38) of each pixel unit (P)
(384), so that the pixel electrode (38) and close to the first side of this pixel unit the data line (40) coupled capacitor with
The pixel electrode (38) and the coupled capacitor of the data line (40) close to this pixel unit second side are of substantially equal.
8. thin-film transistor array base-plate as claimed in claim 7, which is characterized in that second notch (384) is opened in
The edge of the pixel electrode (38).
9. thin-film transistor array base-plate as claimed in claim 7, which is characterized in that the film of each pixel unit (P) is brilliant
Body pipe is provided close to the position of the first end of the pixel electrode (38) in this pixel unit (P), and second notch is located at
The first end of the pixel electrode (38) in this pixel unit (P).
10. a kind of liquid crystal display panel, which is characterized in that including thin film transistor (TFT) as described in any one of claims 1-9
Array substrate, color membrane substrates (50) and the liquid crystal layer (70) being set between thin-film transistor array base-plate and color membrane substrates (50).
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| CN201810954958.2A CN108983512B (en) | 2018-08-21 | 2018-08-21 | Thin film transistor array substrate and liquid crystal display panel |
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| CN201810954958.2A CN108983512B (en) | 2018-08-21 | 2018-08-21 | Thin film transistor array substrate and liquid crystal display panel |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111427201A (en) * | 2020-04-30 | 2020-07-17 | 京东方科技集团股份有限公司 | Array substrate and display panel |
| WO2023206148A1 (en) * | 2022-04-27 | 2023-11-02 | 京东方科技集团股份有限公司 | Array substrate and display panel |
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