CN108962873A - Compound double damask structure and preparation method thereof - Google Patents

Compound double damask structure and preparation method thereof Download PDF

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Publication number
CN108962873A
CN108962873A CN201811025919.0A CN201811025919A CN108962873A CN 108962873 A CN108962873 A CN 108962873A CN 201811025919 A CN201811025919 A CN 201811025919A CN 108962873 A CN108962873 A CN 108962873A
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dielectric layer
branch
conductive
conducting wire
layer
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CN108962873B (en
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不公告发明人
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Changxin Memory Technologies Inc
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Changxin Memory Technologies Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5283—Cross-sectional geometry

Abstract

The present invention provides a kind of compound double damask structure and preparation method thereof, including top dielectric, bottom dielectric layer；At least two layers of intermediate dielectric layer between top dielectric, bottom dielectric layer；First damascene structure, including the first top metal conducting wire being formed in top dielectric, and with the first top metal conducting wire integrally connected and through the first conductive plug of at least two layers intermediate dielectric layer；Second damascene structure, including be at least partly formed in top dielectric the second top metal conducting wire, connect and run through the first intermetallic metal conducting wire of one layer of intermediate dielectric layer with the second conductive plug of the bottom integrally connected of the second top metal conducting wire and with the second conductive plug bottom.The present invention substitutes multilayer Damascus technics by compound dual damascene process, greatly simplifies processing step, improves production efficiency；And the metal interconnection structure by being interspersed realizes the raising of wiring density, and then greatlys save cost.

Description

Compound double damask structure and preparation method thereof
Technical field
The present invention relates to semiconductor devices and manufacturing fields, more particularly to a kind of compound double damask structure and its system Preparation Method.
Background technique
With the continuous diminution of transistor size, the quantity of transistor constantly rises in integrated circuit, the crystalline substance of substantial amounts The signal of body pipe is integrated to need more and more highdensity metal interconnecting layers to realize connection, the electricity of the following metal interconnecting wires Resistance and parasitic capacitance have seriously affected integrated circuit high speed development.
The material of conventional metals interconnection line uses aluminium, in order to overcome the resistance and parasitic capacitance of metal interconnecting wires, semiconductor For industry from metal aluminum interconnecting technological development to metal copper interconnecting line technique, the formation of copper lines cannot pass through traditional aluminum steel work The subtractive etch process of skill goes to realize, therefore, dual damascene process comes into being.Usually first etching is logical for dual damascene process Copper is filled in hole, then etching groove in through-hole and groove, finally planarization process is carried out to copper, in every two layers of dielectric layer Form a double damask structure.Situation more for metal interconnecting layer, will realize the company of tungsten plug and second metal layer Connecing must be by the first metal layer and the first via hole；Realize that the connection of the first metal layer and third metal layer must be by the One via hole, second metal layer and the second via hole, need repeated multiple times dual damascene process, are just able to achieve tungsten plug and second Connection between the connection of metal layer more than metal layer or non-conterminous two metal layers, processing step is relatively cumbersome, Production efficiency is also relatively low as a result,.
Therefore, for these reasons, semiconductor structure and processing step how are improved, the metal interconnection of spanning multilayer is simplified The processing step of line connection, and then improve production efficiency, it has also become one of those skilled in the art's urgent problem to be solved.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of compound double damask structures And preparation method thereof, complex process, production efficiency for solving the metal interconnecting wires across multilayer in the prior art be low, integrated level The problems such as low.
In order to achieve the above objects and other related objects, the present invention provides a kind of compound double damask structure, described multiple Double damask structure is closed to include at least:
Top dielectric, bottom dielectric layer and between the top dielectric and the bottom dielectric layer extremely Few two layers of intermediate dielectric layer, is provided with first Damascus in the top dielectric and at least two layers of intermediate dielectric layer Structure and the second damascene structure；
First damascene structure includes the first top metal conducting wire being formed in the top dielectric, and With the first conductive plug of the first top metal conducting wire integrally connected, first conductive plug is through at least two layers described Intermediate dielectric layer；
Second damascene structure includes the second top metal being at least partly formed in the top dielectric Conducting wire, with the second conductive plug of the bottom integrally connected of the second top metal conducting wire and with second conductive plugs The first intermetallic metal conducting wire of bottom connection is filled in, it is perforative that the first intermetallic metal conducting wire is formed in first conductive plug Not being electrically connected in one layer and with first conductive plug wherein in the intermediate dielectric layer, second conductive plug runs through Wherein it is located at different layers in one layer and with the first intermetallic metal conducting wire at least two layers of intermediate dielectric layer.
Preferably, at least two layers of intermediate dielectric layer includes two layers of intermediate dielectric layer, the bottom of first conductive plug Portion is connected to the top of the bottom dielectric layer；Second conductive plug runs through wherein one layer of two layers of intermediate dielectric layer, institute It states the first intermetallic metal conducting wire to be formed in another layer of two layers of intermediate dielectric layer, the bottom of the first intermetallic metal conducting wire connects Pass to the top of the bottom dielectric layer.
Preferably, at least two layers of intermediate dielectric layer includes three layers of intermediate dielectric layer；First conductive plug runs through The bottom of three layers of intermediate dielectric layer, first conductive plug is connected to the top of the bottom dielectric layer；Described second Damascene structure further includes the third conductive plug with the bottom integrally connected of the first intermetallic metal conducting wire, and described second Conductive plug, the first intermetallic metal conducting wire and the third conductive plug successively extend through intermediate Jie of respective layer Electric layer, and the bottom of the third conductive plug is connected to the top of the bottom dielectric layer.
Preferably, mutually isolated the first conductive structure and the second conductive structure, institute are provided in the bottom dielectric layer It states the first damascene structure and is connected to first conductive structure, second damascene structure is connected to described second and leads Electric structure.
Preferably, first conductive structure and second conductive structure are tungsten plug.
Preferably, first conductive structure and second conductive structure are metal line.
Preferably, arbitrary neighborhood double layer of metal is led in first damascene structure and second damascene structure Orthographic projection of the line in the bottom dielectric layer has overlapping region.
Preferably, the body layer material of first and second conductive plug and the first and second top metals conducting wire Including copper.
Preferably, first damascene structure and second damascene structure are in each conducting wire side wall to its bottom The surface of conductive plug is all provided with barrier layer.
Preferably, each layer of upper surface of at least two layers of intermediate dielectric layer and the bottom dielectric layer is each formed with quarter Lose stop-layer.
It is highly preferred that the material of the etching stop layer includes silicon nitride, the top dielectric, it is at least two layers described in Between dielectric layer and the material of the bottom dielectric layer include silica.
Preferably, first damascene structure includes the first branch and the second branch, second Damascus knot Structure includes third branch and the 4th branch；It is all provided in first branch intermediate dielectric layer corresponding with second branch It sets conductive plug or is respectively provided with plain conductor, in the third branch intermediate dielectric layer corresponding with the 4th branch Setting conductive plug is respectively provided with plain conductor, and appoints in first damascene structure and second damascene structure Orthographic projection of the adjacent two layers plain conductor in the bottom dielectric layer of anticipating has overlapping region.
Preferably, first mutually isolated branch's conductive structure, the second branch conduction are provided in the bottom dielectric layer Structure, third branch conductive structure and the 4th branch's conductive structure, first branch are connected to the first branch conduction knot Structure, second branch are connected to second branch conductive structure, and it is conductive that the third branch is connected to the third branch Structure, the 4th branch are connected to the 4th branch's conductive structure.
Preferably, first branch conductive structure, second branch conductive structure, third branch conductive structure And the 4th branch's conductive structure is tungsten plug.
Preferably, first branch conductive structure, second branch conductive structure, third branch conductive structure And the 4th branch's conductive structure is metal line.
Preferably, two conductive plugs of the same plain conductor are connected in second branch and the third branch It is interspersed, two conductive plugs alignment point of the same plain conductor is connected in first branch and the 4th branch Cloth.
Preferably, second branch and the third branch are stepped, second branch and the third branch Ladder extending direction it is opposite.
Preferably, at least two layers of intermediate dielectric layer includes nine layers of intermediate dielectric layer；First branch and described Two branches include the first top metal conducting wire being formed in the top dielectric, integrally connect with first plain conductor The first conductive plug for connecing, the second intermetallic metal conducting wire being connect with first conductive plug bottom, with described second among 4th conductive plug of the bottom integrally connected of plain conductor, the third intermetallic metal being connect with privates embolism bottom Conducting wire and the 5th conductive plug with the bottom integrally connected of the third intermetallic metal conducting wire, first branch and described The first top metal conducting wire in two branches is connected with each other；The third branch and the 4th branch include be formed in it is described The second top metal conducting wire in top dielectric, the second conduction with the bottom integrally connected of the second top metal conducting wire Embolism, the first intermetallic metal conducting wire being connect with second conductive plug bottom, the bottom with the first intermetallic metal conducting wire The third conductive plug of portion's integrally connected, the 4th intermetallic metal conducting wire being connect with third conductive plug bottom, with it is described In 6th conductive plug of the bottom integrally connected of the 4th intermetallic metal conducting wire, the third branch and the 4th branch Two top metal conducting wires are connected with each other；Wherein, first conductive plug, the third conductive plug, the 4th conductive plugs Plug and the 6th conductive plug extend through corresponding three layers of intermediate dielectric layer, second conductive plug and described the Five conductive plugs extend through one layer of corresponding intermediate dielectric layer.
Preferably, the second intermetallic metal conducting wire in second branch and the first intermetallic metal in the third branch Orthographic projection of the conducting wire in the bottom dielectric layer has overlapping region.
In order to achieve the above objects and other related objects, the present invention provides a kind of preparation side of compound double damask structure Method, comprising:
1) bottom dielectric layer is provided, in forming the first intermediate dielectric layer in the bottom dielectric layer；
2) etch step 1) first intermediate dielectric layer in the structure that is formed is to form primary intermediate sulcus slot, and in institute It states and fills metal material in first groove, form the first intermetallic metal conducting wire；
3) the second intermediate dielectric layer and a top dielectric are formed in the body structure surface that step 2) is formed, etches the top Dielectric layer, second intermediate dielectric layer and first intermediate dielectric layer, to form first through hole, the first through hole is at least It is through to the bottom of first intermediate dielectric layer, while etching the top dielectric and second intermediate dielectric layer, with Form the second through-hole, the upper surface of the second through-hole exposure the first intermetallic metal conducting wire；
4) top dielectric is etched, to form the first top channel and the second top channel, first top ditch Slot and the first through hole penetrate through, and second top channel and second through-hole penetrate through；
5) metal material is filled in first top channel and the first through hole, forms the first top of integrally connected Portion's plain conductor and the first conductive plug, in forming the first damascene structure in the bottom dielectric layer；Simultaneously in described Metal material is filled in second top channel and second through-hole, forms the second top metal conducting wire and second of integrally connected Conductive plug, in forming the second damascene structure in the bottom dielectric layer.
Preferably, it is respectively formed one layer of intermediate dielectric layer in step 1) and step 2), first conductive plug is through described First intermediate dielectric layer and second intermediate dielectric layer, the bottom of first conductive plug are connected to the bottom dielectric layer Top；Second conductive plug runs through second intermediate dielectric layer, and the first intermetallic metal conducting wire is through described the One intermediate dielectric layer, the bottom of the first intermetallic metal conducting wire are connected to the top with the bottom dielectric layer.
Preferably, further comprise:
1) in sequentially forming third intermediate dielectric layer and the first intermediate dielectric layer in the bottom dielectric layer；
2) the third intermediate dielectric layer and first intermediate dielectric layer are etched, to form third through-hole, the third The upper surface of the through-hole exposure bottom dielectric layer, etches first intermediate dielectric layer then to form the primary intermediate sulcus Slot, the primary intermediate sulcus slot and the third through-hole penetrate through, and fill out in the primary intermediate sulcus slot and the third through-hole Metal material is filled, the first intermetallic metal conducting wire and third conductive plug of integrally connected are formed；
3) second intermediate dielectric layer and the top dielectric are formed in the body structure surface that step 2) is formed, etches institute Top dielectric, second intermediate dielectric layer, first intermediate dielectric layer and the first intermediate dielectric layer are stated, described in being formed First through hole, the first through hole are through to the bottom of the third intermediate dielectric layer, at the same etch the top dielectric and Second intermediate dielectric layer, to form second through-hole, the second through-hole exposure the first intermetallic metal conducting wire Upper surface；
Then step 4) and step 5) are executed, to form the first damascene structure and the two the second damascene structures.
Preferably, mutually isolated the first conductive structure and the second conductive structure, institute are provided in the bottom dielectric layer It states the first damascene structure and is connected to first conductive structure, second damascene structure is connected to described second and leads Electric structure.
Preferably, first conductive structure and second conductive structure are tungsten plug.
Preferably, first conductive structure and second conductive structure are metal line.
Preferably, arbitrary neighborhood double layer of metal is led in first damascene structure and second damascene structure Orthographic projection of the line in the bottom dielectric layer has overlapping region.
Preferably, the body layer material of first and second conductive plug and the first and second top metals conducting wire Including copper.
It preferably, further include that the through-hole surfaces penetrated through in side wall to its bottom of each groove form resistance before filling metal material The step of barrier.
It preferably, further include forming etching stop layer respectively at the upper surface of counter structure before forming each intermediate dielectric layer The step of.
Preferably, the material of the etching stop layer includes silicon nitride, the top dielectric, each intermediate dielectric layer and institute The material for stating bottom dielectric layer includes silica.
Preferably, first damascene structure includes the first branch and the second branch, second Damascus knot Structure includes third branch and the 4th branch；It is all provided in first branch intermediate dielectric layer corresponding with second branch It sets conductive plug or is respectively provided with plain conductor, in the third branch intermediate dielectric layer corresponding with the 4th branch Setting conductive plug is respectively provided with plain conductor, and appoints in first damascene structure and second damascene structure Orthographic projection of the adjacent two layers plain conductor in the bottom dielectric layer of anticipating has overlapping region.
Preferably, first mutually isolated branch's conductive structure, the second branch conduction are provided in the bottom dielectric layer Structure, third branch conductive structure and the 4th branch's conductive structure, first branch are connected to the first branch conduction knot Structure, second branch are connected to second branch conductive structure, and it is conductive that the third branch is connected to the third branch Structure, the 4th branch are connected to the 4th branch's conductive structure.
Preferably, first branch conductive structure, second branch conductive structure, third branch conductive structure And the 4th branch's conductive structure is tungsten plug.
Preferably, first branch conductive structure, second branch conductive structure, third branch conductive structure And the 4th branch's conductive structure is metal line.
Preferably, two conductive plugs of the same plain conductor are connected in second branch and the third branch It is interspersed, two conductive plugs alignment point of the same plain conductor is connected in first branch and the 4th branch Cloth.
Preferably, second branch and the third branch are stepped, second branch and the third branch Ladder extending direction it is opposite.
As described above, compound double damask structure and preparation method thereof of the invention, has the advantages that
Compound double damask structure of the invention and preparation method thereof is substituted more by compound dual damascene process Layer dual damascene process, greatly simplifies processing step, improves production efficiency；And the metal interconnection structure by being interspersed is real The raising of existing wiring density, and then greatly save cost.
Detailed description of the invention
Fig. 1 is shown as metal interconnection structure schematic diagram in the prior art.
Fig. 2 is shown as the flow diagram of the preparation method of compound double damask structure of the invention.
Fig. 3 is shown as the schematic diagram that embodiment one forms bottom dielectric layer.
Fig. 4 is shown as embodiment one in the schematic diagram for forming the first intermediate dielectric layer in bottom dielectric layer.
Fig. 5 is shown as the schematic diagram that embodiment one forms primary intermediate sulcus slot in the first intermediate dielectric layer.
Fig. 6 is shown as the schematic diagram that embodiment one forms the first intermetallic metal conducting wire in primary intermediate sulcus slot.
Fig. 7 is shown as embodiment one in forming showing for the second intermediate dielectric layer and top dielectric in the first intermediate dielectric layer It is intended to.
Fig. 8 is shown as embodiment one and forms in top dielectric, the second intermediate dielectric layer and the first intermediate dielectric layer One through-hole forms the schematic diagram of the second through-hole in the second intermediate dielectric layer and the first intermediate dielectric layer.
Fig. 9 is shown as the signal that embodiment one forms the first top channel and the second top channel in top dielectric Figure.
Figure 10 is shown as the first top metal conducting wire and the first conductive plug that embodiment one forms integrally connected, forms one The schematic diagram of second top metal conducting wire and the second conductive plug of body connection.
Figure 11 is shown as the schematic diagram that embodiment two forms bottom dielectric layer.
Figure 12 is shown as embodiment two in forming third intermediate dielectric layer and the first intermediate dielectric layer in bottom dielectric layer Schematic diagram.
Figure 13 is shown as embodiment two and forms showing for third through-hole in third intermediate dielectric layer and the first intermediate dielectric layer It is intended to.
Figure 14 is shown as the schematic diagram that embodiment two forms primary intermediate sulcus slot in the first intermediate dielectric layer.
Figure 15 is shown as the signal for the first intermetallic metal conducting wire and third conductive plug that embodiment dimorphism is attached Figure.
Figure 16 is shown as embodiment two in forming the second interlevel dielectric in third intermediate dielectric layer and the first intermediate dielectric layer The schematic diagram of layer and top dielectric.
Figure 17 is shown as embodiment two in top dielectric, the second intermediate dielectric layer, the first intermediate dielectric layer and third Between form first through hole in dielectric layer, the signal of the second through-hole is formed in the second intermediate dielectric layer and the first intermediate dielectric layer Figure.
Figure 18 is shown as the signal that embodiment two forms the first top channel and the second top channel in top dielectric Figure.
Figure 19 is shown as the first top metal conducting wire and the first conductive plug that embodiment dimorphism is attached, and forms one The schematic diagram of second top metal conducting wire and the second conductive plug of body connection.
Figure 20 is shown as the schematic top plan view of compound damascene structure of the invention.
Figure 21 is shown as the schematic diagram of the compound damascene structure of embodiment three.
Component label instructions
The the first~the second interconnection structure of 1a, 1b
211 bottom dielectric layers
212,213 first, second conductive structure
The first, second tungsten plug of 212a, 213a
212b, 213b metal line
The branch's conductive structure of 212a1,212a2,213a1,21,3a2 first~the 4th
214a, 214b, 214c, 214d, 214e, 214f, 214g, the first~the 9th intermediate dielectric layer
214h、214i
214a ', 214b ', 214c ', 214d ', 214e ', 214f ', the first~the tenth etching stop layer
214g’、214h’、214i’、214j’
215 primary intermediate sulcus slots
216, the 230,232,234, first~the 4th intermetallic metal conducting wire
The barrier layer 216a, 223a, 225a, 230a, 232a, 234a first~the 6th
217 top dielectrics
218 first through hole
219 second through-holes
220 first top channels
221 second top channels
222, the 224,229,231,233, the 235 first~the 6th conductive plug
223 first top metal conducting wires
225 second top metal conducting wires
226 first damascene structures
The first, second branch of 226a, 226b
227 second damascene structures
227a, 227b third, the 4th branch
228 third through-holes
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from Various modifications or alterations are carried out under spirit of the invention.
Please refer to FIG. 1 to FIG. 21.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way The basic conception of invention, only shown in schema then with related component in the present invention rather than package count when according to actual implementation Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its Assembly layout kenel may also be increasingly complex.
As shown in Figure 1, the first interconnection structure 1a is for realizing two conductive structures in bottom dielectric layer (not shown) Interconnection, wherein plain conductor horizontal extension in intermediate dielectric layer (not shown) in the first interconnection structure 1a.By In being routed to obtain limitation, when there are the second interconnection structure 1b, the first interconnection structure 1a and the second interconnection structure 1b It can only be arranged side by side, such wire laying mode leads to that the wiring density of each layer plain conductor is low, layout area waste, directly affects The integrated level of chip.The present invention solves the problems, such as that wiring density is low by compound double damask structure, while improving production effect Rate.
Embodiment one
As shown in Fig. 2~Figure 10, the present embodiment provides a kind of preparation methods of compound double damask structure, comprising:
11) bottom dielectric layer 211 is provided, in forming the first intermediate dielectric layer 214a in the bottom dielectric layer 211.
Specifically, as shown in figure 3, be provided in the bottom dielectric layer 211 mutually isolated the first conductive structure 212 and Second conductive structure 213, in the present embodiment, first conductive structure 212 and the second conductive structure 213 are respectively the first tungsten Fill in 212a and the second tungsten plug 213a.Active area on the first tungsten plug 212a and the second tungsten plug 213a and silicon wafer passes through gold Belong to the connection of silicide (not shown), the material of the metal silicide includes but is not limited to titanium silicide or cobalt silicide.It is described First tungsten plug 212a and the second tungsten plug 213a avoids the metal in processing procedure reaction for connecting metal layer and the active area The surface that copper is diffused into the active area forms unstable reactant, and then influences the electrical property that metal layer is connect with active area Energy.
Specifically, as shown in figure 4, in the present embodiment, using including physical vapour deposition (PVD) (Physical Vapor Deposition, PVD) or chemical vapor deposition (Chemical Vapor Deposition, CVD) or those skilled in the art It is contemplated that other deposition methods in being sequentially depositing the first etching stop layer 214a ' and described in the bottom dielectric layer 211 First intermediate dielectric layer 214a.
12) etch step 11) formed structure in the first intermediate dielectric layer 214a to form primary intermediate sulcus slot 215, and metal material is filled in the primary intermediate sulcus slot 215, form the first intermetallic metal conducting wire 216.The metal material Material includes but is not limited to copper or aluminium.
Specifically, as shown in figure 5, being sequentially etched the first intermediate dielectric layer 214a and first etching stop layer 214a ', to form the primary intermediate sulcus slot 215, the top of the exposure of the primary intermediate sulcus slot 215 second tungsten plug 213a Portion.In the present embodiment, using include plasma etching method or it may occur to persons skilled in the art that other lithographic methods.
Specifically, as shown in fig. 6, the inner surface (side wall and bottom) in the primary intermediate sulcus slot 215 forms the first resistance Then barrier 216a fills metal material in the groove that the first barrier layer 216a is surrounded.
13) the second intermediate dielectric layer 214b and a top dielectric 217 are formed in the body structure surface that step 12) is formed, carved The top dielectric 217, the second intermediate dielectric layer 214b and the first intermediate dielectric layer 214a are lost, to form first Through-hole 218, the first through hole 218 are at least through to the bottom of the first intermediate dielectric layer 214a, while etching the top Portion's dielectric layer 217 and the second intermediate dielectric layer 214b, to form the second through-hole 219, described in the exposure of the second through-hole 219 The upper surface of first intermetallic metal conducting wire 216.
Specifically, as shown in fig. 7, in the present embodiment, using physical vapour deposition (PVD) (Physical Vapor Deposition, PVD) or chemical vapor deposition (Chemical Vapor Deposition, CVD) Jie among described first The surface of electric layer 214a sequentially forms the second etching stop layer 214b ', the second intermediate dielectric layer 214b, third etching stop layer 214c ' and top dielectric 217.
Specifically, as shown in figure 8, being sequentially etched the top dielectric 217, the third etching stop layer 214c ', institute State the second intermediate dielectric layer 214b, the second etching stop layer 214b ', the first intermediate dielectric layer 214a and described first Etching stop layer 214a ', to form the first through hole 218, the top of the exposure of the first through hole 218 first tungsten plug 212a Portion.
Specifically, as shown in figure 8, etching the top dielectric 217, the third etching stop layer 214c ', institute simultaneously The second intermediate dielectric layer 214b and the second etching stop layer 214b ' is stated, to form second through-hole 219, described second The top of the exposure of through-hole 219 first intermediate dielectric layer 216.
It should be noted that in the present embodiment, the top bore of the first through hole 218 and second through-hole 219 Greater than bottom bore, and the bore of the first through hole 218 and second through-hole 219 distinguishes continuous gradation.In practical application In, being set as needed for the bore of the first through hole 218 and second through-hole 219 is not limited to this embodiment.
14) top dielectric 217 is etched, it is described to form the first top channel 220 and the second top channel 221 First top channel 220 and first through hole perforation 218, second top channel 221 is passed through with second through-hole 219 It is logical.
Specifically, as shown in figure 9, being sequentially etched the top dielectric 217 and the third etching stop layer 214c ', To form first top channel 220 and second top channel 221, first top channel 220 and described first Through-hole 218 penetrates through, and the bottom width of first top channel 220 is greater than the top bore of the first through hole 218；It is described Second top channel 221 is penetrated through with second through-hole 219, and the bottom width of second top channel 221 is greater than described The top bore of second through-hole 219.
15) metal material is filled in second top channel 221 and second through-hole 219, forms integrally connected The second top metal conducting wire 225 and the second conductive plug 224, in forming the second damascene in the bottom dielectric layer 211 Remove from office structure 227；Metal material is filled in first top channel 220 and the first through hole 218 simultaneously, formation integrally connects The the first top metal conducting wire 223 and the first conductive plug 222 connect, in the first big horse of formation in the bottom dielectric layer 211 Scholar removes from office structure 223.
Specifically, as shown in Figure 10, it is formed in the inner surface of first top channel 220 and the first through hole 218 Second barrier layer 223a forms third barrier layer in the inner surface of second top channel 221, second through-hole 219 225a, each barrier layer is mutually indepedent and integrally connected；Then in the second barrier layer 223a groove surrounded and the third Metal material is filled respectively in the groove that barrier layer 225a is surrounded, to form the first top metal conducting wire of integrally connected 223 and first conductive plug 222, the second top metal conducting wire 225 of integrally connected and second conductive plug 224。
It should be noted that in the present embodiment, the thickness of each intermediate dielectric layer includes 100~1000 nanometers, it can basis Actual needs setting, is not limited to this embodiment.The top dielectric 217, each intermediate dielectric layer and the bottom dielectric layer 211 material includes silica, and the material of each etching stop layer includes silicon nitride, the material on each barrier layer include tantalum nitride or Tantalum, it includes copper or aluminium that filling, which forms plain conductor and the body layer metal material of conductive plug, and each material can be according to actual needs Setting, is not limited to this embodiment.
As shown in Figure 10, the compound double damask structure of the present embodiment includes:
Top dielectric 217, bottom dielectric layer 211 and between the top dielectric 217 and the bottom dielectric layer The first intermediate dielectric layer 214a and the second intermediate dielectric layer 214b between 211, in the top dielectric 217, described first The first damascene structure 226 and the second damascene are provided in intermediate dielectric layer 214a and the second intermediate dielectric layer 214b Remove from office structure 227.
Specifically, the bottom dielectric layer 211 is set to bottom, in the first intermediate dielectric layer 214a and described second Between dielectric layer 214b be set in turn in the bottom dielectric layer 211, the top dielectric 217 is set among described second On dielectric layer 214b, the bottom dielectric layer 211, the first intermediate dielectric layer 214a, the second intermediate dielectric layer 214b And the material of the top dielectric 217 includes silica.
It should be noted that in the present embodiment, the bottom dielectric layer 211, the first intermediate dielectric layer 214a, institute The upper surface for stating the second intermediate dielectric layer 214b is respectively formed etching stop layer.
Specifically, in the present embodiment, be provided in the bottom dielectric layer 211 mutually isolated the first tungsten plug 212a and Second tungsten plug 213a, in practical applications, the conductive structure being arranged in the bottom dielectric layer 211 may include metal line, institute The material for stating metal line includes copper or aluminium, is not limited to this embodiment.
Specifically, first damascene structure 226 include the first top-level metallic conducting wire 223 and with first top layer First conductive plug 222 of 223 integrally connected of plain conductor.The first top-level metallic conducting wire 223 is formed in the top and is situated between In electric layer 217, in the present embodiment, the first top-level metallic conducting wire 223 is connected to top and the institute of the top dielectric 217 State the bottom of third etching stop layer 214c '.First conductive plug 222 runs through the second intermediate dielectric layer 214b and institute The first intermediate dielectric layer 214a is stated, in the present embodiment, first conductive plug 222 is connected to the first top-level metallic conducting wire 223 bottom and the top of the first tungsten plug 212a.
It should be noted that the first top-level metallic conducting wire 223 and first conductive plug 222 of integrally connected Side wall and bottom are provided with the second barrier layer 223a, the second barrier layer 223a integrally connected.
Specifically, second damascene structure 227 includes the second top-level metallic conducting wire 225 and second top layer It second conductive plug 224 of 225 integrally connected of plain conductor and is connected among the first of 224 bottom of the second conductive plug Plain conductor 216.The second top-level metallic conducting wire 225 is formed in the top dielectric 217, in the present embodiment, institute It states the second top-level metallic conducting wire 225 and is connected to the top of the top dielectric 217 and the bottom of the third etching stop layer 214c ' Portion.Second conductive plug 224 runs through the second intermediate dielectric layer 214b, in the present embodiment, second conductive plugs The bottom of 222 connection the first top-level metallic conducting wire 223 of plug and the bottom of the second etching stop layer 214b '.Described One intermetallic metal conducting wire 216 is formed in the first intermediate dielectric layer 214a, in the present embodiment, first intermetallic metal Conducting wire 216 is connected to the bottom of second conductive plug 224 and the top of the second tungsten plug 213a.
It should be noted that the second top-level metallic conducting wire 225 and second conductive plug 224 of integrally connected Side wall and bottom are provided with third barrier layer 225a, the third barrier layer 225a integrally connected.First intermetallic metal is led The side wall of line 216 and bottom are provided with the first barrier layer 216a, the first barrier layer 216a integrally connected.
In the present embodiment, the first top-level metallic conducting wire 223, first conductive plug 222, second top layer The body layer material of plain conductor 225 and the first intermetallic metal conducting wire 216 includes copper.
In the present embodiment, the first intermetallic metal conducting wire 216 is located at the perforative centre of first conductive plug 222 Wherein in one layer of dielectric layer, can be by first damascene structure for upper and lower level wiring than the interconnection structure of comparatively dense 226 and the intermetallic metal conducting wire of second damascene structure 227 be set in different intermediate dielectric layers, avoided together with this The layout area occupied in one intermediate dielectric layer is excessive, leads to the waste of layout area in other intermediate dielectric layers, by mutual Staggered mode improves wiring density, while simplifying the processing step of the metal interconnection across multilayer intermediate dielectric layer.
Embodiment two
As shown in Fig. 2, Figure 11~Figure 20, the present embodiment provides a kind of preparation method of compound double damask structure, with Embodiment one the difference is that, intermediate dielectric layer in the present embodiment is three layers, is included the following steps:
21) bottom dielectric layer 211 is provided, in sequentially forming third intermediate dielectric layer in the bottom dielectric layer 211 214c and the first intermediate dielectric layer 214a.
Specifically, as shown in figure 11, the first mutually isolated conductive structure 212 is provided in the bottom dielectric layer 211 And second conductive structure 213, in the present embodiment, first conductive structure 212 and the second conductive structure 213 are respectively first Metal line 212b and the second metal line 213b.The first metal line 212b and the second metal line 213b is gold Belong to the random layer in wiring layer, can realize this implementation by the first metal line 212b and the second metal line 213b Compound damascene structure and lower metal interconnection structure be electrically connected.
Specifically, as shown in figure 12, in the present embodiment, using physical vapour deposition (PVD) (Physical Vapor Deposition, PVD) or chemical vapor deposition (Chemical Vapor Deposition, CVD) or those skilled in the art Member it is contemplated that other deposition methods in being sequentially depositing the 4th etching stop layer 214d ', third in the bottom dielectric layer 211 Intermediate dielectric layer 214c, the first etching stop layer 214a ' and the first intermediate dielectric layer 214a.
22) etch step 21) formed structure in the third intermediate dielectric layer 214c and first interlevel dielectric Layer 214a, to form third through-hole 228, then the upper surface of the exposure of third through-hole 228 bottom dielectric layer 211 is carved Lose the first intermediate dielectric layer 214a to form the primary intermediate sulcus slot 215, the primary intermediate sulcus slot 215 and described the The perforation of three through-holes 228, and metal material is filled in the primary intermediate sulcus slot 215 and the third through-hole 228, form one The the first intermetallic metal conducting wire 216 and third conductive plug 229 of connection.
Specifically, as shown in figure 13, the first intermediate dielectric layer 214a, first etching stop layer are sequentially etched 214a ', the third intermediate dielectric layer 214c and the 4th etching stop layer 214d ', to form the third through-hole 228, The top of the exposure of the second through-hole 228 second metal line 213b.
It should be noted that in the present embodiment, the top bore of the third through-hole 228 is greater than bottom bore, and institute State the bore difference continuous gradation of third through-hole 228.In practical applications, the bore of the third through-hole 228 can be as needed It is set, is not limited to this embodiment.
Specifically, as shown in figure 14, the first intermediate dielectric layer 214a and first etching stop layer are sequentially etched 214a ', to form the primary intermediate sulcus slot 215, the primary intermediate sulcus slot 215 is penetrated through with the third through-hole 228, and institute The bottom width for stating primary intermediate sulcus slot 215 is greater than the top bore of the third through-hole 228.
Specifically, as shown in figure 15, it is formed in the inner surface of the primary intermediate sulcus slot 215 and the third through-hole 228 First barrier layer 216a, the first barrier layer 216a integrally connected；Then the groove surrounded in the first barrier layer 216a Middle filling metal material, to form the first intermetallic metal conducting wire 216 and the third conductive plug 229 of integrally connected. In the present embodiment, the metal material includes copper.
23) the second intermediate dielectric layer 214b and a top dielectric 217 are formed in the body structure surface that step 22) is formed, carved The top dielectric 217, the second intermediate dielectric layer 214b and the first intermediate dielectric layer 214a are lost, to form first Through-hole 218, the first through hole 218 are at least through to the bottom of the first intermediate dielectric layer 214a, while etching the top Portion's dielectric layer 217 and the second intermediate dielectric layer 214b, to form the second through-hole 219, described in the exposure of the second through-hole 219 The upper surface of first intermetallic metal conducting wire 216.
Specifically, as shown in Figure 16~Figure 17, step is the same as example 1, and will not repeat them here.
24) top dielectric 217 is etched, it is described to form the first top channel 220 and the second top channel 221 First top channel 220 and first through hole perforation 218, second top channel 221 is passed through with second through-hole 219 It is logical.
Specifically, as shown in figure 18, step is the same as example 1, and will not repeat them here.
25) metal material is filled in second top channel 221 and second through-hole 219, forms integrally connected The second top metal conducting wire 225 and the second conductive plug 224, in forming the second damascene in the bottom dielectric layer 211 Remove from office structure 227；Metal material is filled in first top channel 220 and the first through hole 218 simultaneously, formation integrally connects The the first top metal conducting wire 223 and the first conductive plug 222 connect, in the first big horse of formation in the bottom dielectric layer 211 Scholar removes from office structure 223.
Specifically, as shown in figure 19, step is the same as example 1, and will not repeat them here.
It should be noted that in the present embodiment, the material of each structure and the setting of size are the same as example 1, herein It does not repeat one by one.
As shown in figure 19, the compound double damask structure of the present embodiment includes:
Top dielectric 217, bottom dielectric layer 211 and between the top dielectric 217 and the bottom dielectric layer Third intermediate dielectric layer 214c, the first intermediate dielectric layer 214a and the second intermediate dielectric layer 214b between 211, at the top Dielectric layer 217, the third intermediate dielectric layer 214c, the first intermediate dielectric layer 214a and second intermediate dielectric layer The first damascene structure 226 and the second damascene structure 227 are provided in 214b.
Specifically, the bottom dielectric layer 211 is set to bottom, the third intermediate dielectric layer 214c, in described first Between dielectric layer 214a and the second intermediate dielectric layer 214b be set in turn in the bottom dielectric layer 211, the top is situated between Electric layer 217 is set on the second intermediate dielectric layer 214b, the bottom dielectric layer 211, the third intermediate dielectric layer 214c, the first intermediate dielectric layer 214a, the second intermediate dielectric layer 214b and the top dielectric 217 material packet Include silica.
It should be noted that in the present embodiment, the bottom dielectric layer 211, the third intermediate dielectric layer 214c, institute State the first intermediate dielectric layer 214a, the upper surface of the second intermediate dielectric layer 214b is respectively formed etching stop layer.
Specifically, in the present embodiment, the first mutually isolated metal line is provided in the bottom dielectric layer 211 212b and the second metal line 213b, in practical applications, the conductive structure being arranged in the bottom dielectric layer 211 may include tungsten Plug, is not limited to this embodiment.
Specifically, first damascene structure 226 include the first top-level metallic conducting wire 223 and with first top layer First conductive plug 222 of 223 integrally connected of plain conductor.The first top-level metallic conducting wire 223 is formed in the top and is situated between In electric layer 217, in the present embodiment, the first top-level metallic conducting wire 223 is connected to top and the institute of the top dielectric 217 State the bottom of third etching stop layer 214c '.First conductive plug 222 runs through the second intermediate dielectric layer 214b, institute State the first intermediate dielectric layer 214a and third intermediate dielectric layer 214c, in the present embodiment, first conductive plug 222 It is connected to the bottom of the first top-level metallic conducting wire 223 and the top of the first metal line 212b.
It should be noted that the first top-level metallic conducting wire 223 and first conductive plug 222 of integrally connected Side wall and bottom are provided with the second barrier layer 223a, the second barrier layer 223a integrally connected.
Specifically, second damascene structure 227 includes the second top-level metallic conducting wire 225 and second top layer Second conductive plug 224 of 225 integrally connected of plain conductor is connected among the first of 224 bottom of the second conductive plug Plain conductor 216 and third conductive plug 229 with 216 integrally connected of the first intermetallic metal conducting wire.Second top layer Plain conductor 225 is formed in the top dielectric 217, and in the present embodiment, the second top-level metallic conducting wire 225 is connected to The top of the top dielectric 217 and the bottom of the third etching stop layer 214c '.Second conductive plug 224 passes through The second intermediate dielectric layer 214b is worn, in the present embodiment, second conductive plug 222 is connected to first top-level metallic The bottom of conducting wire 223 and the bottom of the second etching stop layer 214b '.The first intermetallic metal conducting wire 216 is formed in institute It states in the first intermediate dielectric layer 214a, in the present embodiment, the first intermetallic metal conducting wire 216 is connected to second conductive plugs The bottom of plug 224 and the bottom of the first etching stop layer 214a '.The third conductive plug 229 is in the third Between dielectric layer 214c, in the present embodiment, the third conductive plug 229 is connected to the bottom of the first intermetallic metal conducting wire 216 Portion and the top of the second metal line 213b.
It should be noted that the second top-level metallic conducting wire 225 and second conductive plug 224 of integrally connected Side wall and bottom are provided with third barrier layer 225a, the third barrier layer 225a integrally connected.Described the first of integrally connected The side wall and bottom of intermetallic metal conducting wire 216 and the third conductive plug 229 are provided with the first barrier layer 216a, and described first Barrier layer 216a integrally connected.
In the present embodiment, the first top-level metallic conducting wire 223, first conductive plug 222, second top layer The body layer material of plain conductor 225, the first intermetallic metal conducting wire 216 and the third conductive plug 229 includes copper.
In the present embodiment, the first intermetallic metal conducting wire 216 is located at the perforative centre of first conductive plug 222 Wherein in one layer of dielectric layer, can be by first damascene structure for upper and lower level wiring than the interconnection structure of comparatively dense 226 and the intermetallic metal conducting wire of second damascene structure 227 be set in different intermediate dielectric layers, avoided together with this The layout area occupied in one intermediate dielectric layer is excessive, leads to the waste of layout area in other intermediate dielectric layers, by mutual Staggered mode improves wiring density, while simplifying the processing step of the metal interconnection across multilayer intermediate dielectric layer.
As shown in figure 20, the intermetallic metal conducting wire 216 of compound damascene structure of the invention is formed in the first conductive plugs One layer in 221 perforative intermediate dielectric layers is filled in, the arrangement density of plain conductor horizontally in interconnection structure can be effectively improved, And then reduce cost.
It should be noted that formation conductive plug and intermetallic metal are led arbitrarily between top dielectric and bottom dielectric layer Line, and the structure of the intermetallic metal wire crossbar distribution in different damascene structures is included in the present invention, it is different herein One repeats.
Embodiment three
As shown in figure 21, the present embodiment provides a kind of compound damascene structure, not with embodiment one and embodiment two It is with place, the compound damascene structure of the present embodiment includes nine layers of intermediate dielectric layer, and each damascene structure wraps Kuo Liangge branch, specific structure include:
Top dielectric 217, bottom dielectric layer 211 and between the top dielectric 217 and the bottom dielectric layer The 9th intermediate dielectric layer 214i, the 8th intermediate dielectric layer 214h, the 7th intermediate dielectric layer 214g, the 6th centre between 211 are situated between Electric layer 214f, the 5th intermediate dielectric layer 214e, the 4th intermediate dielectric layer 214d, third intermediate dielectric layer 214c, the first centre are situated between It is big to be provided with first in the top dielectric 217 and each intermediate dielectric layer by electric layer 214a and the second intermediate dielectric layer 214b Ma Shige structure 226 and the second damascene structure 227.
As shown in figure 21, the material of the top dielectric 217, each intermediate dielectric layer and the bottom dielectric layer 211 with Embodiment one and embodiment two are identical, will not repeat them here.
Specifically, the first mutually isolated branch conductive structure 212a1, second are provided in the bottom dielectric layer 211 Branch conductive structure 212a2, third branch conductive structure 213a1 and the 4th branch conductive structure 213a2, in the present embodiment, The first branch conductive structure 212a1, the second branch conductive structure 212a2, the third branch conductive structure 213a1 And the 4th branch conductive structure 213a2 is tungsten plug, is not limited to this embodiment.
As shown in figure 21, first damascene structure 226 includes the first branch 226a and the second branch 226b, described First branch 226a is connected to the first branch conductive structure 212a1, and the second branch 226b is connected to described second point Branch conductive structure 212a2.
Specifically, the first branch 226a and the second branch 226b includes being formed in the top dielectric The first top metal conducting wire 223 in 217, with the first conductive plug 222 of 223 integrally connected of the first plain conductor, with Second intermetallic metal conducting wire 230 of 222 bottom of the first conductive plug connection, with the second intermetallic metal conducting wire 223 4th conductive plug 231 of bottom integrally connected, the third intermetallic metal conducting wire being connect with 231 bottom of privates embolism 232 and the 5th conductive plug 233 with the bottom integrally connected of the third intermetallic metal conducting wire 232, first branch The first top metal conducting wire 223 in 226a and the second branch 226b is connected with each other.
As shown in figure 21, second damascene structure 227 includes third branch 227a and the 4th branch 227b, described Third branch 227a is connected to the third branch conductive structure 213a1, and the 4th branch 227b is connected to described 4th point Branch conductive structure 213a2.
Specifically, the third branch 227a and the 4th branch 227b includes being formed in the top dielectric The second top metal conducting wire 225 in 217, the second conduction with the bottom integrally connected of the second top metal conducting wire 225 Embolism 224, the first intermetallic metal conducting wire 216 being connect with 224 bottom of the second conductive plug and first intermetallic metal In the third conductive plug 229 of the bottom integrally connected of conducting wire 216, the 4th connect with 229 bottom of third conductive plug Between plain conductor 234, the 6th conductive plug 235 with the bottom integrally connected of the 4th intermetallic metal conducting wire 234, described the The second top metal conducting wire 225 in three branch 227a and the 4th branch 227b is connected with each other.
Specifically, first conductive plug 222, the third conductive plug 229, the 4th conductive plug 231 and 6th conductive plug 235 extends through corresponding three layers of intermediate dielectric layer, second conductive plug 224 and described 5th conductive plug 233 extends through one layer of corresponding intermediate dielectric layer.
Specifically, in the present embodiment, it is connected in the second branch 226b and third branch 227a same described Two conductive plugs of plain conductor are interspersed, and connect same institute in the first branch 226a and the 4th branch 227b Two conductive plug aligned fashions of plain conductor are stated, and the second branch 226b and third branch 227a is in ladder Shape, the second branch 226b are opposite with the ladder extending direction of the third branch 227a.
Specifically, first damascene structure and second damascene structure are in each conducting wire side wall to its bottom The surface of conductive plug is all provided with barrier layer, is denoted as respectively: the first barrier layer 216a, the second barrier layer 223a, third stop Layer 225a, the 4th barrier layer 230a, the 5th barrier layer 232a, the 6th barrier layer 234a.
Specifically, each layer of upper surface of each intermediate dielectric layer and the bottom dielectric layer 211 is respectively formed etching stop layer, It is denoted as respectively: the first etching stop layer 214a ', the second etching stop layer 214b ', third etching stop layer 214c ', the 4th etching Stop-layer 214d ', the 5th etching stop layer 214e ', the 6th etching stop layer 214f ', the 7th etching stop layer 214g ', the 8th Etching stop layer 214h ', the 9th etching stop layer 214i ', the tenth etching stop layer 214j '.
It should be noted that adjacent any intermetallic metal conducting wire is in the bottom in compound damascene structure of the invention Orthographic projection on dielectric layer 211 can overlap, and therefore, the interconnection structure compared to Fig. 1, the present invention can greatly save chip area, And then it improves integrated level, reduce cost.
In conclusion the present invention provides a kind of compound double damask structure and preparation method thereof, by compound double big Ma Shige technique substitutes multilayer Damascus technics, greatly simplifies processing step, improves production efficiency；And by being interspersed Metal interconnection structure realizes the raising of wiring density, and then greatlys save cost.So the present invention effectively overcomes the prior art In various shortcoming and have high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as At all equivalent modifications or change, should be covered by the claims of the present invention.

Claims (36)

1. a kind of compound double damask structure characterized by comprising
Top dielectric, bottom dielectric layer and between the top dielectric and the bottom dielectric layer at least two Layer intermediate dielectric layer, is provided with the first damascene structure in the top dielectric and at least two layers of intermediate dielectric layer And second damascene structure；
First damascene structure includes the first top metal conducting wire being formed in the top dielectric, and with institute The first conductive plug of the first top metal conducting wire integrally connected is stated, first conductive plug is described among at least two layers Dielectric layer；
Second damascene structure include the second top metal conducting wire being at least partly formed in the top dielectric, With the second conductive plug of the bottom integrally connected of the second top metal conducting wire and with second conductive plug bottom Connection the first intermetallic metal conducting wire, the first intermetallic metal conducting wire be formed in first conductive plug it is perforative it is described in Between not being electrically connected in one layer and with first conductive plug wherein in dielectric layer, second conductive plug through it is described extremely Wherein one layer and it is located at different layers with the first intermetallic metal conducting wire in few two layers of intermediate dielectric layer.
2. compound double damask structure according to claim 1, it is characterised in that: at least two layers of intermediate dielectric layer Including two layers of intermediate dielectric layer, the bottom of first conductive plug is connected to the top of the bottom dielectric layer；Described second Conductive plug runs through wherein one layer of two layers of intermediate dielectric layer, and the first intermetallic metal conducting wire is formed in two layers of intermediate dielectric layer Another layer in, the bottom of the first intermetallic metal conducting wire is connected to the top of the bottom dielectric layer.
3. compound double damask structure according to claim 1, it is characterised in that: at least two layers of intermediate dielectric layer Including three layers of intermediate dielectric layer；First conductive plug runs through three layers of intermediate dielectric layer, first conductive plug Bottom is connected to the top of the bottom dielectric layer；Second damascene structure further includes leading with first intermetallic metal The third conductive plug of the bottom integrally connected of line, second conductive plug, the first intermetallic metal conducting wire and described Three conductive plugs successively extend through the intermediate dielectric layer of a respective layer, and the bottom of the third conductive plug is connected to The top of the bottom dielectric layer.
4. compound double damask structure according to claim 1, it is characterised in that: be provided in the bottom dielectric layer Mutually isolated the first conductive structure and the second conductive structure, first damascene structure are connected to the described first conductive knot Structure, second damascene structure are connected to second conductive structure.
5. compound double damask structure according to claim 4, it is characterised in that: first conductive structure and described Second conductive structure is tungsten plug.
6. compound double damask structure according to claim 4, it is characterised in that: first conductive structure and described Second conductive structure is metal line.
7. compound double damask structure according to claim 1, it is characterised in that: first damascene structure and Orthographic projection of the arbitrary neighborhood double layer of metal conducting wire in the bottom dielectric layer has overlapping in second damascene structure Region.
8. compound double damask structure according to claim 1, it is characterised in that: first and second conductive plug And the body layer material of the first and second top metals conducting wire includes copper.
9. compound double damask structure according to claim 1, it is characterised in that: first damascene structure and Second damascene structure is all provided with barrier layer on the surface of each conducting wire side wall to its bottom conductive embolism.
10. compound double damask structure according to claim 1, it is characterised in that: at least two layers of interlevel dielectric Each layer of upper surface of layer and the bottom dielectric layer is each formed with etching stop layer.
11. compound double damask structure according to claim 10, it is characterised in that: the material of the etching stop layer Including silicon nitride, the top dielectric, at least material of two layers of intermediate dielectric layer and the bottom dielectric layer include oxygen SiClx.
12. compound double damask structure according to claim 1, it is characterised in that: first damascene structure Including the first branch and the second branch, second damascene structure includes third branch and the 4th branch；Described first point Conductive plug is respectively provided in the branch intermediate dielectric layer corresponding with second branch or is respectively provided with plain conductor, the third Conductive plug is respectively provided in branch's intermediate dielectric layer corresponding with the 4th branch or is respectively provided with plain conductor, and described Arbitrary neighborhood double layer of metal conducting wire is in the bottom dielectric layer in first damascene structure and second damascene structure On orthographic projection have overlapping region.
13. compound double damask structure according to claim 12, it is characterised in that: be arranged in the bottom dielectric layer There are first mutually isolated branch's conductive structure, second branch's conductive structure, third branch conductive structure and the 4th branch conductive Structure, first branch are connected to first branch conductive structure, and second branch is connected to second branch and leads Electric structure, the third branch are connected to third branch conductive structure, and the 4th branch is connected to the 4th branch Conductive structure.
14. compound double damask structure according to claim 13, it is characterised in that: the first branch conduction knot Structure, second branch conductive structure, third branch conductive structure and the 4th branch's conductive structure are tungsten plug.
15. compound double damask structure according to claim 13, it is characterised in that: the first branch conduction knot Structure, second branch conductive structure, third branch conductive structure and the 4th branch's conductive structure are metal line.
16. compound double damask structure according to claim 12, it is characterised in that: second branch and described Two conductive plugs that the same plain conductor is connected in three branches are interspersed, first branch and the 4th branch Two conductive plug aligned fashions of the middle same plain conductor of connection.
17. compound double damask structure according to claim 16, it is characterised in that: second branch and described Three branches are stepped, and second branch is opposite with the ladder extending direction of the third branch.
18. compound double damask structure according to claim 12, it is characterised in that: at least two layers of interlevel dielectric Layer includes nine layers of intermediate dielectric layer；First branch and second branch include being formed in the top dielectric First top metal conducting wire and the first conductive plug of the first plain conductor integrally connected and first conductive plug Second intermetallic metal conducting wire of bottom connection, the 4th conductive plugs with the bottom integrally connected of the second intermetallic metal conducting wire Plug, the third intermetallic metal conducting wire being connect with privates embolism bottom and the bottom with the third intermetallic metal conducting wire The first top metal conducting wire in 5th conductive plug of integrally connected, first branch and second branch mutually interconnects It connects；The third branch and the 4th branch include the second top metal conducting wire being formed in the top dielectric, It is connect with the second conductive plug of the bottom integrally connected of the second top metal conducting wire, with second conductive plug bottom The first intermetallic metal conducting wire, with the third conductive plug of the bottom integrally connected of the first intermetallic metal conducting wire, with it is described The bottom integrally connected of the 4th intermetallic metal conducting wire and the 4th intermetallic metal conducting wire of third conductive plug bottom connection The second top metal conducting wire in 6th conductive plug, the third branch and the 4th branch is connected with each other；Wherein, described First conductive plug, the third conductive plug, the 4th conductive plug and the 6th conductive plug extend through correspondence Three layers of intermediate dielectric layer, second conductive plug and the 5th conductive plug extend through one layer it is corresponding described Intermediate dielectric layer.
19. compound double damask structure according to claim 18, it is characterised in that: second in second branch Intermetallic metal conducting wire has with orthographic projection of the first intermetallic metal conducting wire in the third branch in the bottom dielectric layer Overlapping region.
20. a kind of preparation method of compound double damask structure characterized by comprising
1) bottom dielectric layer is provided, in forming the first intermediate dielectric layer in the bottom dielectric layer；
2) etch step 1) first intermediate dielectric layer in the structure that is formed is to form primary intermediate sulcus slot, and in described the Metal material is filled in one groove, forms the first intermetallic metal conducting wire；
3) the second intermediate dielectric layer and a top dielectric are formed in the body structure surface that step 2) is formed, etches the top dielectric Layer, second intermediate dielectric layer and first intermediate dielectric layer, to form first through hole, the first through hole at least runs through The extremely bottom of first intermediate dielectric layer, while the top dielectric and second intermediate dielectric layer are etched, to be formed Second through-hole, the upper surface of the second through-hole exposure the first intermetallic metal conducting wire；
4) etch the top dielectric, to form the first top channel and the second top channel, first top channel with The first through hole perforation, second top channel and second through-hole penetrate through；
5) metal material is filled in first top channel and the first through hole, forms the first conductive plugs of integrally connected Plug and the first top metal conducting wire, in forming the first damascene structure in the bottom dielectric layer；Simultaneously in described second Metal material is filled in top channel and second through-hole, forms the second conductive plug and the second top metal of integrally connected Conducting wire, in forming the second damascene structure in the bottom dielectric layer.
21. the preparation method of compound double damask structure according to claim 20, it is characterised in that: step 1) and step It is rapid 2) in be respectively formed one layer of intermediate dielectric layer, first conductive plug is in first intermediate dielectric layer and described second Between dielectric layer, the bottom of first conductive plug is connected to the top of the bottom dielectric layer；Second conductive plug passes through Second intermediate dielectric layer is worn, the first intermetallic metal conducting wire is among first intermediate dielectric layer, described first The bottom of plain conductor is connected to the top with the bottom dielectric layer.
22. the preparation method of compound double damask structure according to claim 20, it is characterised in that: further packet It includes:
1) in sequentially forming third intermediate dielectric layer and the first intermediate dielectric layer in the bottom dielectric layer；
2) the third intermediate dielectric layer and first intermediate dielectric layer are etched, to form third through-hole, the third through-hole The upper surface of the exposure bottom dielectric layer, etches first intermediate dielectric layer then to form the primary intermediate sulcus slot, The primary intermediate sulcus slot and the third through-hole penetrate through, and gold is filled in the primary intermediate sulcus slot and the third through-hole Belong to material, forms the first intermetallic metal conducting wire and third conductive plug of integrally connected；
3) second intermediate dielectric layer and the top dielectric are formed in the body structure surface that step 2) is formed, etches the top Portion's dielectric layer, second intermediate dielectric layer, first intermediate dielectric layer and the first intermediate dielectric layer, to form described first Through-hole, the first through hole are through to the bottom of the third intermediate dielectric layer, while etching the top dielectric and described Second intermediate dielectric layer, to form second through-hole, the upper table of the second through-hole exposure the first intermetallic metal conducting wire Face；
Then step 4) and step 5) are executed, to form the first damascene structure and the second damascene structure.
23. the preparation method of compound double damask structure according to claim 20, it is characterised in that: the bottom is situated between Mutually isolated the first conductive structure and the second conductive structure are provided in electric layer, first damascene structure is connected to institute The first conductive structure is stated, second damascene structure is connected to second conductive structure.
24. the preparation method of compound double damask structure according to claim 23, it is characterised in that: described first leads Electric structure and second conductive structure are tungsten plug.
25. the preparation method of compound double damask structure according to claim 23, it is characterised in that: described first leads Electric structure and second conductive structure are metal line.
26. the preparation method of compound double damask structure according to claim 20, it is characterised in that: described first is big In Ma Shige structure and second damascene structure arbitrary neighborhood double layer of metal conducting wire in the bottom dielectric layer just Projection has overlapping region.
27. the preparation method of compound double damask structure according to claim 20, it is characterised in that: first He The body layer material of second conductive plug and the first and second top metals conducting wire includes copper.
28. the preparation method of compound double damask structure according to claim 20, it is characterised in that: filling metal material Further include the steps that the through-hole surfaces penetrated through in side wall to its bottom of each groove form barrier layer before material.
29. the preparation method of compound double damask structure according to claim 20, it is characterised in that: form each centre Further include the steps that forming etching stop layer respectively at the upper surface of counter structure before dielectric layer.
30. the preparation method of compound double damask structure according to claim 29, it is characterised in that: the etch-stop Only the material of layer includes silicon nitride, and the material of the top dielectric, each intermediate dielectric layer and the bottom dielectric layer includes oxygen SiClx.
31. the preparation method of compound double damask structure according to claim 20, it is characterised in that: described first is big Ma Shige structure includes the first branch and the second branch, and second damascene structure includes third branch and the 4th branch； It is respectively provided with conductive plug in first branch intermediate dielectric layer corresponding with second branch or is respectively provided with metal and lead Line is respectively provided with conductive plug in the third branch intermediate dielectric layer corresponding with the 4th branch or is respectively provided with metal Conducting wire, and in first damascene structure and second damascene structure arbitrary neighborhood double layer of metal conducting wire described Orthographic projection in bottom dielectric layer has overlapping region.
32. the preparation method of compound double damask structure according to claim 31, it is characterised in that: the bottom is situated between First mutually isolated branch's conductive structure, second branch's conductive structure, third branch conductive structure and are provided in electric layer Four branch's conductive structures, first branch are connected to first branch conductive structure, and second branch is connected to described Second branch's conductive structure, the third branch are connected to third branch conductive structure, and the 4th branch is connected to institute State the 4th branch's conductive structure.
33. the preparation method of compound double damask structure according to claim 32, it is characterised in that: described first point Branch conductive structure, second branch conductive structure, third branch conductive structure and the 4th branch's conductive structure are Tungsten plug.
34. the preparation method of compound double damask structure according to claim 32, it is characterised in that: described first point Branch conductive structure, second branch conductive structure, third branch conductive structure and the 4th branch's conductive structure are Metal line.
35. the preparation method of compound double damask structure according to claim 31, it is characterised in that: described second point Two conductive plugs that the same plain conductor is connected in branch and the third branch are interspersed, first branch and institute State two conductive plug aligned fashions that the same plain conductor is connected in the 4th branch.
36. the preparation method of compound double damask structure according to claim 35, it is characterised in that: described second point Branch and the third branch are stepped, and second branch is opposite with the ladder extending direction of the third branch.
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