CN108962539B - Metal/oxide three-layer heterojunction film and preparation method thereof - Google Patents
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Abstract
The invention discloses a metal/oxide three-layer heterojunction film and a preparation method thereof, wherein the preparation method comprises the following steps: on a monocrystalline silicon or gadolinium gallium garnet substrate, a platinum film, an yttrium iron garnet film and a cobalt oxide film are sequentially arranged from bottom to top, a three-layer heterojunction structure is formed by covering through an antiferromagnetic oxide CoO, the traditional platinum film/yttrium iron garnet film double-layer heterojunction structure is improved, the spin thermoelectric voltage can be improved by 100% under the same thermal gradient condition, the spin transmission rate is greatly improved, and the thermal stability of a device is enhanced.
Description
Technical Field
The invention belongs to the technical field of magnetic ultrathin film materials, and particularly relates to a metal/oxide three-layer heterojunction film capable of improving the magnitude of a spin thermoelectric effect and a preparation method thereof.
Background
Spintronics is an emerging science of data transmission, processing, and storage by manipulating the spin of electrons. The spin thermoelectric effect is a phenomenon that when a thermal gradient is established in a direction perpendicular to a normal line of a sample and magnetic moments of the sample are longitudinally arranged in a plane in a ferromagnetic/heavy metal heterojunction, a voltage difference is established in the plane of the sample in a transverse direction, and has potential application value in the spin electronics. Most of traditional heterojunction structure materials are based on a silicon substrate or a gadolinium gallium garnet substrate, and are double-layer film heterojunction of an yttrium iron garnet film and a platinum film from bottom to top, and the spin thermoelectric voltage and the spin transmission rate are not high.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention aims to provide a metal/oxide three-layer heterojunction thin film and a preparation method thereof, a platinum film (Pt), an yttrium iron garnet film (YIG) and a cobalt oxide film (CoO) are sequentially arranged on a monocrystalline silicon or gadolinium gallium garnet substrate from bottom to top, the traditional platinum film/yttrium iron garnet film two-layer heterojunction structure is improved, an antiferromagnetic oxide CoO is used for covering to form a three-layer heterojunction structure, the spin thermoelectric voltage is maximally improved by 100% under the same thermal gradient condition, the spin transmission rate is improved, and the thermal stability of a device is enhanced.
The above object of the present invention is achieved by the following technical solutions:
a metal/oxide three-layer heterojunction film takes monocrystalline silicon or gadolinium gallium garnet as a substrate, and the substrate sequentially comprises from inside to outside: a platinum film, an yttrium iron garnet film and a cobalt oxide film; wherein the content of the first and second substances,
the thickness of the platinum film is 3-9 nm;
the thickness of the yttrium iron garnet film is 15-90 nm;
the thickness of the cobalt oxide film is 1.5-6 nm.
Further, the thickness of the platinum film is 4-8 nm, and preferably 6 nm.
Further, the thickness of the yttrium iron garnet film is 30-75 nm, and preferably 50 nm.
Further, the thickness of the cobalt oxide film is 3.0-4.5 nm, and preferably 4.0 nm.
In a second aspect, the preparation method of the metal/oxide three-layer heterojunction thin film specifically comprises the following steps:
s1: the cleaned substrate is placed in a sputtering cavity of a magnetron sputtering device and is vacuumized until the vacuum degree is 2.0 multiplied by 10- 5Introducing argon gas when the pressure is Pa, and maintaining the pressure of the argon gas to be 1-3 mtorr; performing direct-current magnetron sputtering on a Pt target under the conditions that the power is 50-70W and the current is 100mA to obtain a Pt film; wherein the sputtering rate is
S2: standing for 1h after the Pt film grows up, taking out a sample, placing the sample in a cavity of pulse laser deposition equipment, and vacuumizing until the vacuum degree is 2.0 multiplied by 10-6Pa, raising the temperature of the substrate in the cavity to 400 ℃, introducing oxygen, and maintaining the pressure of the oxygen at 1.0-5.0 Pa; at a power of 70-90 mW and a voltageStriking a YIG target by pulse laser under the condition of 18.5-20.5 kV to obtain a YIG film; wherein the laser repetition frequency is 1-8 Hz;
s3: after the laser striking is finished, naturally cooling the temperature in the cavity to normal temperature, taking out the sample, and quickly annealing for 5-10 min in an annealing furnace at the temperature of 800-850 ℃;
s4: placing the annealed material in a magnetron sputtering cavity, and vacuumizing until the vacuum degree is 2.0 multiplied by 10-5When Pa, introducing argon, and maintaining the pressure of the argon at 1-3 mtorr; performing direct-current magnetron sputtering on a Co target under the conditions that the power is 40-60W and the current is 175mA to obtain a Co film; wherein the sputtering rate is
S5: and standing for 1h after the Co film grows, taking out the sample, quickly annealing in an oxygen atmosphere in an annealing furnace at the temperature of 350-450 ℃ for 5-10 min, and oxidizing the Co film to form a CoO film to obtain the Co film.
Further, the sputtering rate of the DC magnetron sputtering Pt target in the step S1 is
Further, the repetition frequency of the laser of the step S2 when the pulse laser strikes the YIG target is 3-5 Hz.
Further, the sputtering rate of the DC magnetron sputtering Co target in the step S4 is
Compared with the prior art, the invention has the beneficial effects that:
the invention is characterized in that a platinum film (Pt), an yttrium iron garnet film (YIG) and a cobalt oxide film (CoO) are sequentially arranged on a monocrystalline silicon or gadolinium gallium garnet substrate from bottom to top, the spinning thermoelectric voltage is maximally improved by 100% under the same thermal gradient condition, the spinning transmission rate is improved, and the thermal stability of a device is enhanced.
Secondly, the reversed platinum film/yttrium iron garnet film adopts a high-speed annealing mode, so that the formation of the yttrium iron garnet film is ensured, and the performance of the platinum film is not lost after short-time high-temperature treatment.
And thirdly, the three-layer heterojunction structure is formed by covering the antiferromagnetic oxide CoO, so that the surface oxidation of the sample is better prevented, the thermal stability of the sample is improved, and the cost is reduced compared with the traditional covering gold film and the like.
Drawings
FIG. 1 shows a metal/oxide three-layer heterojunction film of the present invention and a conventional platinum film/yttrium iron garnet film two-layer heterojunction film VSSEComparative plot of voltage.
Detailed Description
The technical solutions of the present invention will be described in detail below with reference to the accompanying drawings, but the scope of the present invention is not limited to the following embodiments.
A computer is adopted to control a multifunctional magnetron sputtering device AJA and a pulsed laser deposition device PLD, Gadolinium Gallium Garnet (GGG) is used as a substrate to prepare samples of a GGG/Pt/YIG/CoO film and a GGG/Pt/YIG film, and the specific steps are as follows:
putting the cleaned substrate into a sputtering cavity, vacuumizing until the background vacuum degree of the cavity is reduced to 2.0 multiplied by 10-5When Pa, introducing argon, and maintaining the pressure of the argon at 1-3 mtorr; the method adopts a magnetron sputtering mode to perform direct current sputtering on a Pt target, the power is 50-70W, the current is 100mA, and the sputtering rate is
And standing for 1h after the growth is finished to form a platinum film with the thickness of 3-9 nm, and taking out a sample.
Placing into PLD cavity of pulsed laser deposition equipment, vacuumizing, and waiting for background vacuum of cavity to reduce to 2.0 × 10-6When Pa is needed, the temperature in the cavity is raised to 400 ℃, oxygen is introduced, and the oxygen pressure is maintained at 1.0-5.0 Pa; adopting pulse laser to strike a YIG target, wherein the power is 70-90 mW, the voltage is 18.5-20.5 kV, the laser repetition frequency is 1-8 Hz, and after the laser striking is finished, an yttrium iron garnet film with the thickness of 15-90 nm is formed,and taking out the sample after the temperature in the cavity is naturally reduced to normal temperature.
Annealing in a rapid annealing furnace at 800-850 ℃ for 5-10 min.
After the annealing is finished, the sample is put into the magnetron sputtering cavity again, the vacuum pumping is carried out, and the background vacuum degree of the cavity is reduced to 2.0 multiplied by 10-5When Pa, introducing argon, and maintaining the pressure of the argon at 1-3 mtorr; adopting a magnetron sputtering mode, sputtering a Co target by direct current, wherein the power is 40-60W, the current is 175mA, and the sputtering rate is
After the growth is finished and the standing is carried out for 1h, a sample is taken out.
And (3) annealing the sample in a rapid annealing furnace at 350-450 ℃ for 5-10 min, oxidizing Co to form a cobaltous oxide film with the thickness of 1.5-6 nm, and obtaining the GGG/Pt/YIG/CoO sample.
Example 1
Putting the cleaned substrate Gadolinium Gallium Garnet (GGG) into a sputtering cavity, vacuumizing until the background vacuum degree of the cavity is reduced to 2.0 multiplied by 10-5When Pa, introducing argon, and maintaining the pressure of the argon at 1-3 mtorr; adopting a magnetron sputtering mode to sputter a Pt target by direct current, wherein the power is 50W, the current is 100mA, and the sputtering rate is
After the growth and standing for 1h, a platinum film with the thickness of 3nm is formed, and a sample is taken out.
Placing into PLD cavity of pulsed laser deposition equipment, vacuumizing, and waiting for background vacuum of cavity to reduce to 2.0 × 10-6When Pa is needed, the temperature in the cavity is raised to 400 ℃, oxygen is introduced, and the oxygen pressure is maintained at 1.0-5.0 Pa; and (3) striking the YIG target by using pulse laser, wherein the power is 700mW, the voltage is 18.5kV, the laser repetition frequency is 1Hz, forming an yttrium iron garnet film with the thickness of 15nm after the laser striking is finished, and taking out a sample after the temperature in the cavity is naturally reduced to normal temperature.
Annealing at 800 deg.C for 5min in a rapid annealing furnace, placing the sample into the magnetron sputtering chamber again after annealing, vacuumizing until the background vacuum degree of the chamber is reduced to 2.0 × 10-5When Pa, argon is introduced, and the pressure of argon is maintained1-3 mtorr; adopting a magnetron sputtering mode to sputter a Co target by direct current, wherein the power is 40W, the current is 175mA, and the sputtering rate is
After the growth is finished and the standing is carried out for 1h, a sample is taken out.
And (3) putting the sample into a rapid annealing furnace for annealing at 350 ℃ for 5min, oxidizing Co to form a cobaltous oxide film with the thickness of 1.5nm, and obtaining the GGG/Pt/YIG/CoO sample.
Example 2
The cleaned substrate gadolinium gallium garnet is put into a sputtering cavity, and the sputtering cavity is vacuumized until the background vacuum degree of the cavity is reduced to 2.0 multiplied by 10-5When Pa, introducing argon, and maintaining the pressure of the argon at 1-3 mtorr; adopting a magnetron sputtering mode to perform direct current sputtering on a Pt target, wherein the power is 70W, the current is 100mA, and the sputtering rate is
After the growth and standing for 1h, a platinum film with the thickness of 9nm is formed, and a sample is taken out.
Placing into PLD cavity of pulsed laser deposition equipment, vacuumizing, and waiting for background vacuum of cavity to reduce to 2.0 × 10-6When Pa is needed, the temperature in the cavity is raised to 400 ℃, oxygen is introduced, and the oxygen pressure is maintained at 1.0-5.0 Pa; and (3) striking the YIG target by using pulse laser, wherein the power is 90mW, the voltage is 20.5kV, the laser repetition frequency is 8Hz, forming an yttrium iron garnet film with the thickness of 90nm after the laser striking is finished, and taking out a sample after the temperature in the cavity is naturally reduced to normal temperature.
Annealing at 850 deg.C for 10min in a rapid annealing furnace, placing the sample into the magnetron sputtering chamber again after the annealing is completed, vacuumizing until the background vacuum degree of the chamber is reduced to 2.0 × 10-5When Pa, introducing argon, and maintaining the pressure of the argon at 1-3 mtorr; adopting a magnetron sputtering mode to sputter a Co target by direct current, wherein the power is 60W, the current is 175mA, and the sputtering rate is
After the growth is finished and the standing is carried out for 1h, a sample is taken out.
And (3) annealing the sample in a rapid annealing furnace at 450 ℃ for 10min, oxidizing Co to form a cobaltous oxide film with the thickness of 6nm, and obtaining the GGG/Pt/YIG/CoO sample.
Example 3
The cleaned substrate gadolinium gallium garnet is put into a sputtering cavity, and the sputtering cavity is vacuumized until the background vacuum degree of the cavity is reduced to 2.0 multiplied by 10-5When Pa, introducing argon, and maintaining the pressure of the argon at 1-3 mtorr; adopting a magnetron sputtering mode to perform direct current sputtering on a Pt target, wherein the power is 65W, the current is 100mA, and the sputtering rate is
After the growth and standing for 1h, a platinum film with the thickness of 6nm is formed, and a sample is taken out.
Placing into PLD cavity of pulsed laser deposition equipment, vacuumizing, and waiting for background vacuum of cavity to reduce to 2.0 × 10-6When Pa is needed, the temperature in the cavity is raised to 400 ℃, oxygen is introduced, and the oxygen pressure is maintained at 1.0-5.0 Pa; and (3) striking the YIG target by using pulse laser, wherein the power is 80mW, the voltage is 19.5kV, the laser repetition frequency is 5Hz, forming an yttrium iron garnet film with the thickness of 50nm after the laser striking is finished, and taking out a sample after the temperature in the cavity is naturally reduced to normal temperature.
Annealing in a rapid annealing furnace at 800 ℃ for 8 min; after the annealing is finished, the sample is put into the magnetron sputtering cavity again, the vacuum pumping is carried out, and the background vacuum degree of the cavity is reduced to 2.0 multiplied by 10-5When Pa, introducing argon, and maintaining the pressure of the argon at 1-3 mtorr; adopting a magnetron sputtering mode to sputter a Co target by direct current, wherein the power is 50W, the current is 175mA, and the sputtering rate is
After the growth is finished and the standing is carried out for 1h, a sample is taken out.
And (3) putting the sample into a rapid annealing furnace, annealing for 8min at 400 ℃, oxidizing Co to form a cobaltous oxide film with the thickness of 4nm, and obtaining the GGG/Pt/YIG/CoO sample.
The same procedure as in example 3 was used except that the DC sputtering Co target and the Co film high temperature annealing were not used, and the obtained sample was GGG/Pt/YIG.
The GGG/Pt/YIG/CoO and GGG/Pt/YIG samples were subjected toSpin coating, photoetching and developing to obtain a standard Hall pattern, etching in a multifunctional magnetron sputtering device AJA to obtain a Hall pattern, growing alumina and Cr (for generating thermal gradient) in an atomic layer deposition device and the magnetron sputtering device respectively, taking out a sample, overlaying into I-shaped strips, measuring the spin thermoelectric seebeck effect of GGG/Pt/YIG and GGG/Pt/YIG/CoO of the same sample by using a transport property measurement system to obtain VSSEVoltage, as shown in FIG. 1, it can be seen that V of the GGG/Pt/YIG/CoO sample of the present invention is measured at the same temperatureSSEThe voltage is obviously higher than that of a GGG/Pt/YIG sample without covering CoO, which shows that the antiferromagnetic oxide CoO covers a three-layer heterojunction structure formed, the spin transfer rate is improved, and the thermal stability of the device is enhanced.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention, and the present invention should not be limited by the disclosure of the preferred embodiments. Therefore, it is intended that all equivalents and modifications which do not depart from the spirit of the invention disclosed herein are deemed to be within the scope of the invention.
Claims (6)
1. A metal/oxide three-layer heterojunction film takes monocrystalline silicon or gadolinium gallium garnet as a substrate, and is characterized in that the substrate sequentially comprises from inside to outside: a platinum film with the thickness of 3-9 nm, an yttrium iron garnet film with the thickness of 15-90 nm and a cobalt oxide film with the thickness of 1.5-6 nm;
the preparation method of the metal/oxide three-layer heterojunction film comprises the following steps:
s1: the cleaned substrate is placed in a sputtering cavity of a magnetron sputtering device and is vacuumized until the vacuum degree is 2.0 multiplied by 10-5Introducing argon gas when the pressure is Pa, and maintaining the pressure of the argon gas to be 1-3 mtorr; under the conditions that the power is 50-70W, the current is 100mA and the sputtering rate is
Carrying out direct current magnetron sputtering on a Pt target under the condition to obtain a Pt film, standing for 1h after the Pt film grows, and taking out a sample;
s2: placing the sample in a cavity of a pulsed laser deposition device, and vacuumizing until the vacuum degree is 2.0 multiplied by 10-6Pa, raising the temperature in the cavity to 400 ℃, introducing oxygen, and maintaining the oxygen pressure at 1.0-5.0 Pa; striking a YIG target by pulse laser under the conditions that the power is 70-90 mW, the voltage is 18.5-20.5 kV and the laser repetition frequency is 1-8 Hz to obtain a YIG film, naturally cooling the temperature in the cavity to normal temperature after the laser striking is finished, and taking out a sample;
s3: rapidly annealing the sample in the step S2 in an annealing furnace at the temperature of 800-850 ℃ for 5-10 min;
s4: placing the annealed material in a magnetron sputtering cavity, and vacuumizing until the vacuum degree is 2.0 multiplied by 10-5When Pa, introducing argon, and maintaining the pressure of the argon at 1-3 mtorr; under the conditions that the power is 40-60W, the current is 175mA and the sputtering rate is
Performing direct current magnetron sputtering on a Co target under the condition to obtain a Co film, standing for 1h after the Co film grows, and taking out a sample;
s5: and (5) placing the sample in the step S4 in an annealing furnace with the temperature of 350-450 ℃ for rapid annealing for 5-10 min, and oxidizing the Co film to form a CoO film.
2. The metal/oxide three-layer heterojunction thin film according to claim 1, wherein the thickness of the platinum film is 4 to 8nm, the thickness of the yttrium iron garnet film is 30 to 75nm, and the thickness of the cobalt oxide film is 3.0 to 4.5 nm.
3. The metal/oxide triple-layer heterojunction thin film according to claim 1 or 2, wherein the thickness of said platinum film is 6nm, the thickness of said yttrium iron garnet film is 50nm, and the thickness of said cobalt oxide film is 4.0 nm.
4. The metal/oxide triple-layer heterojunction thin film as claimed in claim 1, wherein in step S1, the sputtering rate of said dc magnetron sputtering Pt target is
5. The metal/oxide triple-layer heterojunction thin film according to claim 1, wherein in the step S2, the laser repetition frequency of the pulsed laser hitting the YIG target is 3 to 5 Hz.
6. The metal/oxide triple-layer heterojunction thin film as claimed in claim 1, wherein in step S4, the sputtering rate of said dc magnetron sputtering Co target is
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|---|---|---|---|---|
| CN104009155A (en) * | 2014-06-13 | 2014-08-27 | 清华大学 | Memristor realizing method based on spinning Hall magnetoresistance effect |
| CN106129245A (en) * | 2016-07-11 | 2016-11-16 | 北京航空航天大学 | Magnetic tunnel-junction based on ferromagnetic insulator |
| CN106784299A (en) * | 2017-02-10 | 2017-05-31 | 中国科学院物理研究所 | Multilayer film heterojunction structure, its preparation method and application |
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| CN106129245A (en) * | 2016-07-11 | 2016-11-16 | 北京航空航天大学 | Magnetic tunnel-junction based on ferromagnetic insulator |
| CN106784299A (en) * | 2017-02-10 | 2017-05-31 | 中国科学院物理研究所 | Multilayer film heterojunction structure, its preparation method and application |
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