CN108956709A - Gas sensor sensitive material and preparation method thereof - Google Patents
Gas sensor sensitive material and preparation method thereof Download PDFInfo
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- CN108956709A CN108956709A CN201810498418.8A CN201810498418A CN108956709A CN 108956709 A CN108956709 A CN 108956709A CN 201810498418 A CN201810498418 A CN 201810498418A CN 108956709 A CN108956709 A CN 108956709A
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- 239000000463 material Substances 0.000 title claims abstract description 73
- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 59
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910001634 calcium fluoride Inorganic materials 0.000 claims abstract description 39
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 37
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 37
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 37
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 37
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 37
- 229910002666 PdCl2 Inorganic materials 0.000 claims abstract description 30
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 230000035945 sensitivity Effects 0.000 claims abstract description 22
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 claims abstract description 15
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 claims description 23
- 238000001238 wet grinding Methods 0.000 claims description 13
- 150000004703 alkoxides Chemical class 0.000 claims description 6
- 239000011297 pine tar Substances 0.000 claims description 6
- 229940068124 pine tar Drugs 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 3
- 239000012528 membrane Substances 0.000 abstract description 31
- 230000007774 longterm Effects 0.000 abstract description 17
- 239000002002 slurry Substances 0.000 abstract description 9
- 239000006185 dispersion Substances 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract description 4
- 238000013461 design Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- 230000005764 inhibitory process Effects 0.000 abstract description 4
- 239000004615 ingredient Substances 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 94
- 230000000052 comparative effect Effects 0.000 description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 14
- 238000000034 method Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 9
- 238000005245 sintering Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 235000019441 ethanol Nutrition 0.000 description 8
- 238000000576 coating method Methods 0.000 description 7
- 239000011230 binding agent Substances 0.000 description 6
- 238000009472 formulation Methods 0.000 description 6
- 239000011259 mixed solution Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000002105 nanoparticle Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000012018 catalyst precursor Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910006213 ZrOCl2 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- -1 oxygen ions Chemical class 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003837 high-temperature calcination Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 description 1
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 description 1
- IPCAPQRVQMIMAN-UHFFFAOYSA-L zirconyl chloride Chemical compound Cl[Zr](Cl)=O IPCAPQRVQMIMAN-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
- G01N27/127—Composition of the body, e.g. the composition of its sensitive layer comprising nanoparticles
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The invention discloses a kind of gas sensor sensitive materials and preparation method thereof.Wherein, the gas sensor sensitive material contains following component: Zr-SnO286~96wt%, Sb2O31~6wt%, SiO20.5~3.5wt%, CaF20.2~2.5wt%, PdCl21~4wt%.Rationally by sensitive formula design, prepared air-sensitive slurry is uniform, and by SnO for technical solution of the present invention2Trace doped Zr element is carried out, effectively inhibition SnO2Grain growth, and effectively avoid being introduced directly into ZrO2And the problem of leading to bad dispersion, then by rationally controlling CaF2、Sb2O3、SiO2With a small amount of PdCl2Deng proportion, significantly improves sensitive membrane stability and improve the gas-sensitive reaction activity of sensitive membrane;Meanwhile the size of each recipe ingredient is rationally controlled, improve gas sensor sensitivity and long-term working stability.
Description
Technical field
The present invention relates to gas sensor materials, in particular to gas sensor sensitive material and preparation method thereof.
Background technique
Core one of of the gas sensitive material as semiconductor gas sensor, to the actually detected ability of sensor
Play a significant role.When preparing semiconductor gas sensor, the formula of size of sensitive material prepares most important, directly affects
The characteristic of sensor.Currently, the formula of the sensitive material slurry of the overwhelming majority designs and prepares method and is not able to satisfy sensor
Requirement, the sensitivity of the sensor of preparation is lower and long-term working stability is poor, this directly affects and limit these biographies
The practical application area of sensor.
Summary of the invention
The main object of the present invention is to provide gas sensor sensitive material, it is intended to solve existing gas sensor sensitive material and exist
When being applied to semiconductor gas sensor, the sensitivity of prepared sensor is lower, the poor problem of long-term working stability.
To achieve the above object, the present invention proposes that a kind of gas sensor sensitive material, the gas sensor sensitive material contain
There is following component: Zr-SnO286~96wt%, Sb2O31~6wt%, SiO20.5~3.5wt%, CaF20.2~2.5%
Wt%, PdCl21~4wt%.
Optionally, the gas sensor sensitive material contains following component: Zr-SnO291~95wt%, Sb2O32.5~
4wt%, SiO20.5~2.5wt%, CaF20.5~1.5%wt%, PdCl20.5~2wt%.
Optionally, the Zr-SnO2In, the doping of Zr is 0.8~1.5wt%.
Optionally, the Zr-SnO2In powdered, and partial size is 20~80nm.
Optionally, the Sb2O3In powdered, and partial size is 20~60nm.
Optionally, the SiO2In powdered, and partial size is 20~60nm.
Optionally, the CaF2In powdered, and partial size is 20~60nm.
Optionally, the gas sensor sensitive material also includes and the Zr-SnO2, Sb2O3, SiO2, CaF2And PdCl2
The liquid carrier mixed.
Optionally, the liquid carrier is water-ethanol-pine tar mixed alkoxide solution.
The invention also discloses a kind of preparation methods of gas sensor sensitive material, include the following steps:
By Zr-SnO2, Sb2O3, SiO2, CaF2And PdCl2It mixes and is scattered in liquid carrier, it is sensitive to obtain gas sensor
Material.
Optionally, described by Zr-SnO2, Sb2O3, SiO2, CaF2And PdCl2It mixes and is scattered in liquid carrier specifically:
By the Zr-SnO2, Sb2O3, SiO2, CaF2, PdCl2It is mixed with liquid carrier, and carries out wet-milling.
Optionally, the liquid carrier is water-ethanol-pine tar mixed alkoxide solution.
Rationally by formula design, prepared air-sensitive slurry is uniform, and by SnO for technical solution of the present invention2It carries out
Trace doped Zr element, effectively inhibition SnO2Grain growth, and effectively avoid being introduced directly into ZrO2And lead to asking for bad dispersion
Topic, then by rationally controlling CaF2、Sb2O3、SiO2With a small amount of PdCl2Deng proportion, significantly improves sensitive membrane stability and improve quick
Feel the gas-sensitive reaction activity of film;Meanwhile the size of each recipe ingredient is rationally controlled, improve gas sensor sensitivity and long-term
Job stability.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
The structure shown according to these attached drawings obtains other attached drawings.
Fig. 1 is the sensitivity of gas sensor and 1 sample of comparative example to 100ppm alcohol gas prepared by Examples 1 to 3
With temperature change curve graph;
Fig. 2 is the long-term working stability curve of 1 sample of gas sensor and comparative example prepared by Examples 1 to 3;
Fig. 3 is the long-term working stability curve of 2 gas sensor of comparative example;
Fig. 4 is the scanning electron microscope (SEM) photograph of sensitive membrane after 3 gas sensor of embodiment continuously works on power 2 months;
Fig. 5 is the scanning electron microscope (SEM) photograph of sensitive membrane after 2 gas sensor of comparative example continuously works on power 2 months.
The embodiments will be further described with reference to the accompanying drawings for the realization, the function and the advantages of the object of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.Base
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts it is all its
His embodiment, shall fall within the protection scope of the present invention.
It is to be appreciated that the directional instruction (such as up, down, left, right, before and after ...) of institute is only used in the embodiment of the present invention
In explaining in relative positional relationship, the motion conditions etc. under a certain particular pose (as shown in the picture) between each component, if should
When particular pose changes, then directionality instruction also correspondingly changes correspondingly.
In addition, the description for being such as related to " first ", " second " in the present invention is used for description purposes only, and should not be understood as
Its relative importance of indication or suggestion or the quantity for implicitly indicating indicated technical characteristic.Define as a result, " first ",
The feature of " second " can explicitly or implicitly include at least one of the features.In addition, the technical side between each embodiment
Case can be combined with each other, but must be based on can be realized by those of ordinary skill in the art, when the combination of technical solution
Conflicting or cannot achieve when occur will be understood that the combination of this technical solution is not present, also not the present invention claims guarantor
Within the scope of shield.
The present invention proposes that a kind of gas sensor sensitive material, the gas sensor sensitive material contain following component: Zr-
SnO286~96wt%, Sb2O31~6wt%, SiO20.5~3.5wt%, CaF20.2~2.5%wt%, PdCl21~
4wt%.
With Zr-SnO2Nano particle is sensitive material, and large specific surface area, gap structure is abundant, surface and inside activity
Height, in air, surface can largely adsorb oxygen molecule, under certain heating temperature, the oxygen of chemisorption will with O- or
The formation of O2- exists, and due to the absorption of these negative oxygen ions, sensitive material surface forms certain electronics dissipation layer, causes
SnO2High potential barrier is generated between particle, and sensitive material sheet resistance is caused to increase.When sensitive material encounters reducibility gas (such as H2、
CO、CH4Deng) after, reducibility gas reacts with the negative oxygen ion for being adsorbed on sensitive material surface, and the electronics that oxygen is captured
It is released back into sensitive material surface, to make the reduction of sensitive material resistance.Therefore, sensing element is prepared by above-mentioned sensitive material
When, by detecting the conductance variation of sensing element to realize the detection to gas.
Due to SnO2For nano particle under long-term hot environment, crystal grain will appear growth, and air-sensitive performance will appear drift,
Long-term working stability is poor, for this purpose, in synthesis SnO2In the process, by introducing basic zirconium chloride ZrOCl2, wherein Zr element participates in
SnO2The growth of crystal grain, thus than directly adulterating ZrO2It being capable of SnO in significantly more efficient inhibition sensitive membrane2The growth of crystal grain guarantees
It is formed by the long-term working stability and sensitivity of sensitive membrane, also, Zr doping can enhance absorption of the sensitive membrane to gas,
The operating temperature of gas sensor is reduced, and the appropriate doping of Zr element can reduce sensitive film resistance, favorably improve sensitivity.
Meanwhile SnO further is improved by introducing Binder Phase2The long-term working stability of base sensitive membrane introduces Binder Phase
Sensitive material particle can be made to connect, tense during the sintering process, is fixed, and sensitive membrane and matrix is made to be strongly adhered to one
It rises, promotes the long-term working stability of gas sensor.Wherein, SiO2Play the basic framework of Binder Phase;Sb2O3Reduce sensitive material
Expect the potential barrier at granular boundary, reduces the resistance of sensitive membrane, it is advantageous to improve material sensitivity.CaF2It can be effectively reduced Binder Phase
The surface melting temperature of middle each component during the sintering process, meanwhile, guarantee the electrical property and chemical property of entire Binder Phase, is conducive to
Improve the long-term working stability and sensitivity of sensitive membrane.In addition, PdCl2As catalyst precursor, in subsequent formula of size
Nanoscale simple substance Pd or PdO will be generated in treatment process, is catalyzed gas-sensitive reaction, improve sensitivity and gas-selectively.
Further, the gas sensor sensitive material contains following component: Zr-SnO291~95wt%, Sb2O3 2.5
~4wt%, SiO20.5~2.5wt%, CaF20.5~1.5%wt%, PdCl20.5~2wt%.
Further, the Zr-SnO2In, the doping of Zr is 0.8~1.5wt%.Pure SnO2Resistance it is very big, when mixing
Miscellaneous a certain amount of Zr, can make Zr-SnO2In effective density of donors Nd, pass through Zr-SnO2The electron charge density on surface increases,
Resistance substantially reduces, and is conducive to improve sensitivity.Prior art progress can be used in the doping of Zr, for example, by using collosol and gel legal system
It is standby, first by SnCl4And ZrOCl2It is dispersed in water according to setting ratio mixing, and a certain amount of ammonium hydroxide is added, by the molten of generation
Glue gel washs drying, and high-temperature calcination obtains Zr-SnO2Powder.
Further, the Zr-SnO2In powdered, and partial size is 20~80nm.
Further, the Sb2O3In powdered, and partial size is 20~60nm.
Further, the SiO2In powdered, and partial size is 20~60nm.
Further, the CaF2In powdered, and partial size is 20~60nm.
The partial size of sensitive material directly affects the gas-sensitive property of material, and partial size is smaller, and specific surface area is bigger, and active site is got over
It is more, it is stronger to the detectability of VOC gas.SnO2As main sensitive material, when partial size is less than 100nm, Zr-SnO2Nano material
And sensitivity lower to the detectable limit of gas is higher, the Zr-SnO synthesized in the application2The partial size of nano particle be 20~
80nm.When preparing slurry and sensitive membrane, in order to reduce other components (such as Sb as far as possible2O3, SiO2、CaF2) to Zr-SnO2
The covering of nano grain surface, as far as possible holding Zr-SnO2The contact area of nano particle and detection gas guarantees that response is sensitive
Degree, so Sb2O3, SiO2、CaF2Equal particles are as appropriate as possible, and partial size is close to SnO2The size of nano particle.
Those skilled in the art are known, PdCl2As catalyst precursor, will be given birth in subsequent formula of size treatment process
At nanoscale simple substance Pd or PdO, catalytic action is played, therefore to presoma PdCl2It does not need to limit its partial size.
Partial size described above is statistical data, is a value range, is such as tested using laser diffraction analyzer.
Further, the gas sensor sensitive material also includes and the Zr-SnO2, Sb2O3, SiO2, CaF2With
PdCl2The liquid carrier mixed.Liquid carrier is equivalent to carrier, controls the rheological behavior of slurry, by gas sensor sensitivity material
Material is prepared into the form of slurry, in order to make gas sensor.The dosage of liquid carrier can depend on the gas sensor of subsequent preparation
The difference of type and it is different.When the dosage of liquid carrier is more, slurry more dilutes, when the dosage of liquid carrier is few, slurry
It is more thick.To those skilled in the art, the dosage of liquid carrier can depend on actual conditions and adjust.
Further, the liquid carrier is water-ethanol-pine tar mixed alkoxide solution.
The invention also provides a kind of preparation methods of gas sensor sensitive material, include the following steps: Zr-SnO2,
Sb2O3, SiO2, CaF2And PdCl2It mixes and is scattered in liquid carrier, obtain gas sensor sensitive material.
Further, described by Zr-SnO in order to remarkably promote the evenly dispersed of each component2, Sb2O3, SiO2, CaF2With
PdCl2It mixes and is scattered in liquid carrier specifically:
By the Zr-SnO2, Sb2O3, SiO2, CaF2, PdCl2It is mixed with liquid carrier, and carries out wet-milling.
The application uses wet-milling, and the number of components that the application introduces are more, for more uniform these components of dispersion, uses
Wet-milling dispersion is more more effective than ultrasonic disperse.During wet-milling, in the environment of working at high speed, strong shear action can
Keep each inorganic component dispersion more uniform.
Further, the liquid carrier is water-ethanol-pine tar mixed alkoxide solution.
The consistency of ethyl alcohol is lower, but readily volatilized, causes the coating processes for preparing gas sensor more difficult, and quickly wave
Hair is easy to cause the sensitive membrane to be formed crack occur, influences the performance of gas sensor;The consistency of terpinol is higher, it is not easy to wave
Hair, the drying of sensitive membrane is slower, influences element production.Since ethyl alcohol is readily volatilized, during wet-milling, ethyl alcohol volatilization will lead to
Rate faster, causes the consistency of slurry higher and higher, is unfavorable for following process etc., therefore, prepares water-ethanol-terpinol mixing
Solution is conducive to improve coating processes, the stability of sensitive membrane and the performance of final gas sensor as dispersion solvent.
Below with reference to specific embodiment, present invention is described, it should be noted that these embodiments are only to describe
Property, without limiting the invention in any way.
The preparation step of heater-type sintering-type gas sensor is as follows:
Step 1: by with a pair of of gold electrode and four Pt leads ceramic tube and the welding of Ni-Cr alloy heater strip
On six leg bases;
Step 2: gas sensor sensitive material being coated on ceramic pipe surface, and in 700 DEG C of sintering 4h, obtains heater-type and burns
Junction type gas sensor.
Following embodiment prepares corresponding heater-type sintering-type gas sensor according to above-mentioned preparation step.
Embodiment 1
A kind of preparation method of gas sensor sensitive material, includes the following steps:
Weigh Zr-SnO292wt%, Sb2O34wt%, SiO21.5wt%, CaF21wt%, PdCl21.5wt%, will
Each component is mixed in water-ethanol-terpinol mixed solution that volume ratio is 1:2:2, ball mill wet-milling 5 hours, obtains gas
Quick element sensitive material.
Wherein, the Zr-SnO2In, the doping of Zr is 1.4wt%.
The SnO2Partial size be 20~80nm.
The Sb2O3Partial size be 20~60nm.
The SiO2Partial size be 20~60nm.
The CaF2Partial size be 20~60nm.
Pass through coating, sintering preparation heater-type sintering-type gas sensor (tool using the gas sensor sensitive material of acquisition
Body step referring to aforementioned heater-type sintering-type gas sensor preparation step).
Embodiment 2
A kind of preparation method of gas sensor sensitive material, includes the following steps:
Weigh Zr-SnO292wt%, Sb2O34wt%, SiO21.5wt%, CaF21wt%, PdCl21.5wt%, will
Each component is mixed in water-ethanol-terpinol mixed solution that volume ratio is 1:2:2, ball mill wet-milling 5 hours, obtains gas
Quick element sensitive material.
Wherein, the Zr-SnO2In, the doping of Zr is 1.4wt%.
The SnO2Partial size be 20~80nm.
The Sb2O3Partial size be 20~60nm.
The SiO2Partial size be 20~60nm.
The CaF2Partial size be 20~60nm.
Pass through coating, sintering preparation heater-type sintering-type gas sensor (tool using the gas sensor sensitive material of acquisition
Body step referring to aforementioned heater-type sintering-type gas sensor preparation step).
Embodiment 3
A kind of preparation method of gas sensor sensitive material, includes the following steps:
Weigh Zr-SnO294.5wt%, Sb2O33wt%, SiO20.5wt%, CaF20.5wt%, PdCl2
Each component is mixed in water-ethanol-terpinol mixed solution that volume ratio is 1:2:2 by 1.5wt%, and ball mill wet-milling 5 is small
When, obtain gas sensor sensitive material.
Wherein, the Zr-SnO2In, the doping of Zr is 1.4wt%.
The SnO2Partial size be 20~80nm.
The Sb2O3Partial size be 20~60nm.
The SiO2Partial size be 20~60nm.
The CaF2Partial size be 20~60nm.
Pass through coating, sintering preparation heater-type sintering-type gas sensor (tool using the gas sensor sensitive material of acquisition
Body step referring to aforementioned heater-type sintering-type gas sensor preparation step).
Embodiment 4
A kind of preparation method of gas sensor sensitive material, includes the following steps:
Weigh Zr-SnO286wt%, Sb2O36wt%, SiO23.5wt%, CaF20.5wt%, PdCl24wt%, will
Each component is mixed in volume ratio 1:2:2 water-ethanol-terpinol mixed solution, ball mill wet-milling 5 hours, obtains gas sensitive element
Part sensitive material.
Wherein, the Zr-SnO2In, the doping of Zr is 1.4wt%.
The SnO2Partial size be 20~80nm.
The Sb2O3Partial size be 20~60nm.
The SiO2Partial size be 20~60nm.
The CaF2Partial size be 20~60nm.
Pass through coating, sintering preparation heater-type sintering-type gas sensor (tool using the gas sensor sensitive material of acquisition
Body step referring to aforementioned heater-type sintering-type gas sensor preparation step).
Embodiment 5
A kind of preparation method of gas sensor sensitive material, includes the following steps:
Weigh Zr-SnO293wt%, Sb2O31wt%, SiO22.5wt%, CaF22.5wt%, PdCl21wt%, will
Each component is mixed in volume ratio 1:2:2 water-ethanol-terpinol mixed solution, ball mill wet-milling 5 hours, obtains gas sensitive element
Part sensitive material.
Wherein, the Zr-SnO2In, the doping of Zr is 1.4wt%.
The SnO2Partial size be 20~80nm.
The Sb2O3Partial size be 20~60nm.
The SiO2Partial size be 20~60nm.
The CaF2Partial size be 20~60nm.
Pass through coating, sintering preparation heater-type sintering-type gas sensor (tool using the gas sensor sensitive material of acquisition
Body step referring to aforementioned heater-type sintering-type gas sensor preparation step).
Comparative example 1
The heater-type sintering-type gas sensor MQ-3B of Zhengzhou Wei Sheng Science and Technology Ltd. production.
Comparative example 2
This comparative example is similar to Example 1, and difference is, gas sensor sensitive material is only by SnO2Wet-milling dispersion is in water-
It is prepared in ethyl alcohol-terpinol mixed solution.
Analysis test
Gas-sensitive property test is carried out using the WS-30A air-sensitive tester of Zhengzhou Wei Sheng Science and Technology Ltd. production.First to
The sample room of tester is passed through zero level air, until the resistance of gas sensor is constant;Then, tested gas is passed through to sample room
Body (e.g., ethyl alcohol etc.), this experiment is using 100ppm ethyl alcohol as test object, at this point, measurement voltage is 5V.Recording voltage becomes at any time
The adsorption curve of change, curve to be adsorbed reach balance, stop injection gas, and test terminates.It can be calculated from adsorption curve
The sensitivity of gas sensor.
Since ingredient of the national standard for TVOC gas does not have clear stipulaties, it is contemplated that basic condition in the industry (ethyl alcohol
Gas is demarcated), therefore this experiment is test gas with alcohol gas.
The resistance of the gas sensor of each embodiment and comparative example 2 of table 1
Embodiment 1 | Embodiment 2 | Embodiment 3 | Embodiment 4 | Embodiment 5 | Comparative example 2 | |
Resistance (M Ω) | 5.1 | 4.5 | 2.2 | 8.2 | 12.6 | 76 |
As shown in Figure 1, the heater-type sintering-type gas sensor best effort that embodiment 1 is prepared into embodiment 5
Temperature is 280 DEG C, hence it is evident that lower than 360 DEG C of comparative example 1, therefore can significantly reduce energy consumption.Embodiment 1 is prepared into embodiment 5
Obtained heater-type sintering-type gas sensor sensitivity is respectively 15.7,20.6,26.8,13.1,11.2, is above comparative example
The 10.5 of 1.By Fig. 1 to Fig. 3 it is found that the spirit for the heater-type sintering-type gas sensor that embodiment 1 is prepared into embodiment 3
Sensitivity and long-term working stability and comparative example 1 quite, are significantly better than comparative example 2.
The mechanical performance of the long-term working stability and sensitive membrane of gas sensor it is closely related, pass through 2 He of comparison diagram
Fig. 3 is it is found that by formula design, and the drift of the gas sensor sensitivity of the present embodiment significantly improves, i.e. job stability
It is significantly improved, wherein the SiO in formula2And CaF2Itself could act as fluxing agent and Binder Phase, be conducive to improve institute's shape
At sensitive membrane mechanical strength, so that sensitive membrane is not easy to burst apart under long-term work environment and is fallen off, and guarantee entire bonding
The electrical property and chemical property of phase are conducive to the long-term working stability and sensitivity that improve sensitive membrane.Meanwhile Sb2O3Introducing
The potential barrier that can be effectively reduced excitable material pellet interface, reduces the resistance of sensitive membrane, and ensure that the work of sensitive membrane is steady
The qualitative and a large amount of reaction active sites of the sensitive film surface of holding are advantageous to improve material sensitivity.Further, suitable by introducing
PdCl2, as catalyst precursor, it will generate nanoscale simple substance Pd or PdO in subsequent formula of size treatment process, efficiently
It is catalyzed gas-sensitive reaction, significantly improves the sensitivity of sensitive membrane.Importantly, adulterating SnO in situ by Zr2Nano particle is closing
At SnO2In the process, by introducing Zr, it is made to participate in SnO2The growth of crystal grain, thus than directly adulterating ZrO2It can be more efficient
Inhibition sensitive membrane in SnO2The growth of crystal grain at high temperature guarantees the long-term working stability and sensitivity of sensitive membrane, also,
Zr adulterates the operating temperature that can be effectively reduced gas sensor, and the appropriate doping of Zr can reduce sensitive film resistance, favorably mention
It is highly sensitive.
As shown in Figures 4 and 5, sensitive membrane prepared by inventive formulation is introduced in the case where 2 months persistently work on power, sensitive membrane
Still comparatively dense and smooth (embodiment 2) is generated without apparent crack, and is persistently powered on without inventive formulation at 2 months
Under work, sensitive membrane appearance is significantly burst apart phenomenon (comparative example 2), this also further illustrates that inventive formulation can improve sensitive membrane
Mechanical performance.Sb2O3Middle Sb adulterates Sn2+ lattice, and the appropriate doping of Zr favorably improves conductance, meanwhile, CaF2More added with
The surface melting temperature of each component during the sintering process in the reduction formula of effect, it is easier to form fine and close network, reduce particle
Between surface contacted resistance, improve sensitive membrane conductance.
As shown in table 1, the comparative example 2 without inventive formulation, sensitive film resistance is 76M Ω, and introduces inventive formulation
The sensitive film resistance of Examples 1 to 5 be 5.1,4.5,2.2,8.2,12.6M Ω respectively, hence it is evident that be lower than comparative example 2, this also says
Bright inventive formulation can improve the electrical property of sensitive membrane.
The above description is only a preferred embodiment of the present invention, is not intended to limit the scope of the invention, all at this
Under the inventive concept of invention, using equivalent structure transformation made by description of the invention and accompanying drawing content, or directly/use indirectly
It is included in other related technical areas in scope of patent protection of the invention.
Claims (10)
1. a kind of gas sensor sensitive material, which is characterized in that the gas sensor sensitive material contains following component: Zr-SnO2
86~96wt%, Sb2O31~6wt%, SiO20.5~3.5wt%, CaF20.2~2.5%wt%, PdCl21~4wt%.
2. gas sensor sensitive material as described in claim 1, which is characterized in that the gas sensor sensitive material contain as
Lower component: Zr-SnO291~95wt%, Sb2O32.5~4wt%, SiO20.5~2.5wt%, CaF20.5~1.5%
Wt%, PdCl20.5~2wt%.
3. gas sensor sensitive material as described in claim 1, which is characterized in that the Zr-SnO2In, the doping of Zr is
0.8~1.5wt%.
4. gas sensor sensitive material as claimed any one in claims 1 to 3, which is characterized in that the Zr-SnO2In powder
Last shape, and partial size is 20~80nm.
5. gas sensor sensitive material as claimed any one in claims 1 to 3, which is characterized in that the Sb2O3And/or institute
State SiO2In powdered, and partial size is 20~60nm.
6. gas sensor sensitive material as claimed any one in claims 1 to 3, which is characterized in that the CaF2In powder
Shape, and partial size is 20~60nm.
7. gas sensor sensitive material as claimed any one in claims 1 to 3, which is characterized in that the gas sensor is quick
Feeling material also includes and the Zr-SnO2, Sb2O3, SiO2, CaF2And PdCl2The liquid carrier mixed.
8. gas sensor sensitive material as claimed in claim 7, which is characterized in that the liquid carrier is water-ethanol-pine tar
Mixed alkoxide solution.
9. a kind of preparation method of gas sensor sensitive material, which comprises the steps of:
By Zr-SnO2, Sb2O3, SiO2, CaF2And PdCl2It mixes and is scattered in liquid carrier, obtain gas sensor sensitivity material
Material.
10. the preparation method of gas sensor sensitive material as claimed in claim 9, which is characterized in that described by Zr-SnO2,
Sb2O3, SiO2, CaF2And PdCl2It mixes and is scattered in liquid carrier specifically:
By the Zr-SnO2, Sb2O3, SiO2, CaF2, PdCl2It is mixed with liquid carrier, and carries out wet-milling;
And/or the liquid carrier is water-ethanol-pine tar mixed alkoxide solution.
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