CN108933196A - Flexible base board and preparation method thereof, flexible OLED devices and display device - Google Patents
Flexible base board and preparation method thereof, flexible OLED devices and display device Download PDFInfo
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- CN108933196A CN108933196A CN201711351998.XA CN201711351998A CN108933196A CN 108933196 A CN108933196 A CN 108933196A CN 201711351998 A CN201711351998 A CN 201711351998A CN 108933196 A CN108933196 A CN 108933196A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y02E10/549—Organic PV cells
Abstract
A kind of flexible base board, including polymeric substrates and the barrier anti-reflection film system structure being formed on the polymeric substrates；Wherein, the barrier anti-reflection film system structure includes one or more anti-reflection units of barrier, the antireflection layer for obstructing anti-reflection unit and including inorganic water oxygen barrier layer and being formed on the inorganic water oxygen barrier layer；When the barrier anti-reflection film system structure includes the anti-reflection unit of multiple barriers, the inorganic water oxygen barrier layer and the alternately laminated setting of the antireflection layer；The refractive index of the inorganic water oxygen barrier layer is n, wherein 1.45<N≤2.35, the refractive index of the antireflection layer is less than or equal to 1.45, and the refractive index of the inorganic water oxygen barrier layer is greater than the refractive index of the polymeric substrates.The light transmission rate of the flexible base board is high and has good water and oxygen barrier property, the light emission rate of flexible OLED devices can be improved, and extend the service life of flexible OLED devices.
Description
Technical field
The present invention relates to OLED field of display technology, and in particular to a kind of flexible base board and preparation method thereof, flexibility OLED
Device and display device.
Background technique
It is aobvious that organic electroluminescence device (Organic Light-Emitting Diode, OLED) is also known as organic electric laser
Show, organic luminous semiconductor.Compared with traditional LC D, OLED is not necessarily to backlight, and when electric current passes through organic function layer, organic material is just
It can shine, greatly reduce the thickness and energy consumption of display screen.OLED is since with self-luminous, visual angle is wide, the high and low function of contrast
The advantages that Flexible Displays can be achieved in consumption, is applied to the fields such as mobile phone screen of new generation, computer monitor, full-color TV, by
Everybody extensive concern.
Currently, organic electroluminescence device is mostly prepared on rigid substrates, can be made using flexible substrate material
The display device of full flexible.Flexible OLED devices use scope that is flexible, light-weight, easy to carry, having widened OLED greatly,
It is an important development direction of OLED.
Since flexible OLED devices are very sensitive to water and oxygen, luminous organic material and active metal cathode all hold very much
Easily react and reduce light extraction efficiency with water, oxygen, influence device service life, therefore it is required that steam permeability (WVTR) and
Oxygen permeability (O2TR) to be lower than 10 respectively-6g/m2D and 10-5g/m2·d.However flexibility OLED is often used polymeric substrates
Water oxygen barrier property it is poor, WVTR and O2TR value is generally 100~102Magnitude, and the light transmission rate of polymeric substrates is lower,
To influence the light extraction efficiency of OLED device.
Summary of the invention
Based on this, it is necessary to provide a kind of flexible base board with good water oxygen barriering effect and high transmittance.
A kind of flexible base board, which is characterized in that increase including polymeric substrates, the barrier being formed on the polymeric substrates
Permeable membrane architecture；
Wherein, the barrier anti-reflection film system structure includes one or more anti-reflection units of barrier, the anti-reflection unit of barrier
Including inorganic water oxygen barrier layer and the antireflection layer that is formed on the inorganic water oxygen barrier layer, and the barrier anti-reflection film system structure
It is contacted with the inorganic water oxygen barrier layer with the polymeric substrates；When the anti-reflection unit of barrier is multiple, the barrier
Multiple inorganic water oxygen barrier layers and multiple alternately laminated settings of the antireflection layer in anti-reflection film system structure；
The refractive index of the inorganic water oxygen barrier layer is n, wherein 1.45<The refractive index of n≤2.35, the antireflection layer is less than
Or it is equal to 1.45, and the refractive index of the inorganic water oxygen barrier layer is greater than the refractive index of the polymeric substrates.
Above-mentioned flexible base board is made of by being arranged on polymeric substrates with overlapped way the film layer of different refractivity
It obstructs anti-reflection film system structure and reaches promotion to reduce when light enters air from polymeric substrates by the reflection occurred when interface
The light transmission rate of flexible base board, so that the light emission rate of flexible OLED devices is improved, meanwhile, barrier anti-reflection film system structure has good
Water oxygen barrier property, the water and oxygen barrier property of flexible base board can be enhanced, extend the service life of flexible OLED devices.
The material of the inorganic water oxygen barrier layer is selected from TiO in one of the embodiments,2With at least one in SiNxOy
Kind, wherein 0<X≤4/3,0≤y<2, and the atom number ratio of O and N is 0~50 in SiNxOy:100.
Further, the material of the inorganic water oxygen barrier layer is SiNxOy, wherein 1≤x≤4/3,0≤y≤0.5, and
O and N atom number ratio is 0~10 in SiNxOy：100.
The material of the antireflection layer is selected from MgF in one of the embodiments,2And at least one of SiCx ' Oy ',
In, 0≤x '≤0.2,0≤y '≤2, and C and O atom number ratio are 0~10 in SiCx ' Oy '：100.
Further, the material of the antireflection layer is SiCx ' Oy ', wherein 0≤x '≤0.1,1.8≤y '≤2, and
C and O atom number ratio are 4~6 in SiCx ' Oy '：100.
In one of the embodiments, the inorganic water oxygen barrier layer of single layer with a thickness of 50nm~1000nm, single layer
The antireflection layer with a thickness of 50nm~1000nm.
The quantity of the anti-reflection unit of barrier described in the barrier anti-reflection film system structure is 2~4 in one of the embodiments,
It is a.
In order to enhance water oxygen barrier and the antireflective effect of flexible base board, while avoiding the thickness of device too thick, the barrier
2~4 anti-reflection units of barrier can be set in anti-reflection film system structure.
The polymeric substrates are polyimide substrate (abbreviation PI substrate) or polyethers sulfuryl in one of the embodiments,
Plate (PES substrate), the polymeric substrates with a thickness of 5 μm~3000 μm.
The another object of the application is to provide the preparation method of above-mentioned flexible base board, specifically includes following steps：
In forming the inorganic water oxygen barrier layer on the polymeric substrates；
In forming the antireflection layer on the water oxygen barrier layer to get flexible base board.
The further object of the application is to provide a kind of flexible OLED devices, and the flexible OLED devices include above-mentioned flexibility
Substrate and the organic illuminator layer being formed on the flexible base board.
The application also provides a kind of display device comprising above-mentioned flexible base board.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of an embodiment flexible OLED devices；
Fig. 2 is the structural schematic diagram of an embodiment flexible base board.
Specific embodiment
To facilitate the understanding of the present invention, a more comprehensive description of the invention is given in the following sections with reference to the relevant attached drawings.In attached drawing
Give presently preferred embodiments of the present invention.But the invention can be realized in many different forms, however it is not limited to this paper institute
The embodiment of description.On the contrary, purpose of providing these embodiments is keeps the understanding to the disclosure more thorough
Comprehensively.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein "and/or" includes one or more phases
Any and all combinations of the listed item of pass.
As shown in Fig. 1~2, the flexible OLED devices 100 of an embodiment, including flexible base board 10 and it is formed in flexible base
Organic illuminator layer 30 on plate 10；The flexible base board 10 includes polymeric substrates 11 and is formed on polymeric substrates 11
Obstruct anti-reflection film system structure 12.
Wherein, as shown in Fig. 2, barrier anti-reflection film system structure 12 includes one or more anti-reflection units 121 of barrier, barrier increases
Saturating unit 121 is made of inorganic water oxygen barrier layer 1212 and antireflection layer 1214 and antireflection layer 1214 is located at inorganic water oxygen barrier layer
On 1212；When obstructing anti-reflection film system structure 12 includes the anti-reflection unit 121 of multiple barriers, inorganic water oxygen barrier layer 1212 and increasing
The alternately laminated setting of permeable layers 1214；The refractive index of inorganic water oxygen barrier layer 1212 be n, 1.45<N≤2.35, antireflection layer 1214
Refractive index be less than or equal to 1.45, and the refractive index of inorganic water oxygen barrier layer 1212 be greater than polymeric substrates 11 refractive index.
Above-mentioned flexible OLED devices 100, by being arranged on the polymeric substrates 11 of flexible base board 10 by refractive index difference
The barrier anti-reflection film system structure 12 that is formed with overlapped way of film layer, passed through with reducing when light enters air from polymeric substrates 11
The reflection of interface Fa Shisheng reaches the transmitance for promoting flexible OLED devices flexible base board, to improve flexible OLED devices
Light emission rate, meanwhile, barrier anti-reflection film system structure 12 has good water oxygen barrier property, and the water oxygen of flexible OLED devices can be enhanced
Barrier property extends the service life of flexible OLED devices.
Polymeric substrates 11 are polyimide substrate (abbreviation PI substrate) or polyether sulfone substrate in one of the embodiments
(PES substrate), polymeric substrates 11 with a thickness of 5 μm~3000 μm.
Polymeric substrates suitable for flexible OLED devices must satisfy following property：Optical transmittance will reach after ITO plated film
To 80% or more, that is, reach the level of glass substrate；Have resistant to high temperatures and higher anti-UV ageing properties；Water vapor rejection requirement
Reach 1ug/m2D, oxygen barrier property are at least up to 10-5g/m2D etc..However, high-temperature stability is asking of primarily solving
Topic, because thin film transistor (TFT) (TFT) panel process temperatures are up to 300~400 DEG C, and the glass transition temperature of polymeric substrates
(Tg) general all at 200 DEG C hereinafter, if PET (polyethylene terephthalate) is 78 DEG C, PEN (poly- naphthalenedicarboxylic acid ethylene glycol
Ester) be 120 DEG C, directly result in can process temperatures it is low, be less suitable for use in exploitation flexible OLED devices.Therefore, select have compared with
The polymeric substrates of high glass-transition temperature, such as PES, PI substrate, the Tg of PES substrate is 203 DEG C, and the Tg of PI substrate is 340
DEG C, higher TFT process temperatures can be born, ITO is being sputtered on substrate or at other layer, PI or PES substrate be less susceptible to because by
Thermal deformation and have a adverse impact.It can lead to ITO conductive film resistance simultaneously to avoid deposit ITO conductive film at low temperature
The problems such as rate height, poor transparency.
The material of inorganic water oxygen barrier layer 1212 is selected from TiO in one of the embodiments,2Or at least one in SiNxOy
Kind, wherein 0<X≤4/3,0≤y<2, and the atom number ratio of O and N is 0~50 in SiNxOy:100.
SiNxOy and TiO2Good water oxygen barrier property is all had, therefore, can be used as the inorganic water oxygen of polymeric substrates
Barrier layer.Meanwhile SiNxOy and TiO2 are also high-index material, SiO2Refractive index be 1.45, by mix N atom, can
To improve SiO2Refractive index, N atom content is higher in SiNxOy, and refractive index is higher, when 0<X≤4/3,0≤y<2, and O with
N atom number ratio is 0~50:When 100, the refractive index of SiNxOy is between 1.45~2.35, and TiO2Refractive index be
2.35。
Further, the material of inorganic water oxygen barrier layer 1212 is SiNxOy, wherein 1≤x≤4/3,0≤y≤0.5, and
O and N atom number ratio is 0~10 in SiNxOy：100, the refractive index of inorganic water oxygen barrier layer 1212 is about 2.3.
The material of antireflection layer 1214 is selected from MgF in one of the embodiments,2Or at least one of SiCx ' Oy ',
In, 0≤x '≤0.2,0≤y '≤2, and C and O atom number ratio are 0~10 in SiCx ' Oy '：100.
MgF2Refractive index be 1.38, be to obstruct excellent antireflection layer low-index material in anti-reflection film system structure.SiCx'
C atom content more high refractive index is lower in Oy ', as 0≤x '≤0.2,0≤y '≤2, and C and O atom number in SiCx ' Oy '
Ratio is 0~10：When 100, the refractive index of SiCx ' Oy ' is 1.40~1.45, meets the needs of antireflection layer design, and SiCx '
Cost is relatively low by Oy ', while MgF2Or SiCx ' Oy ' is used as inorganic material, equally has good water oxygen barrier property, and can be with
Buffer layer when flexible OLED devices prepare anode layer is served as, damage of the sputtering to polymeric substrates is reduced.
Further, the material of antireflection layer 1214 is SiCx ' Oy ', wherein 0≤x '≤0.1,1.8≤y '≤2, and
C and O atom number ratio are 4~6 in SiCx ' Oy '：100, the refractive index of antireflection layer 1214 is about 1.40.
Further, in order to enhance water oxygen barrier and antireflective effect, while guaranteeing the thickness of flexible OLED devices, such as scheme
Shown in 2, barrier anti-reflection film system structure 12 includes 2~4 anti-reflection units 121 of barrier.Preferably, barrier anti-reflection film system structure 12 is wrapped
Include 4 anti-reflection units 121 of barrier.
It is appreciated that when obstructing anti-reflection film system structure 12 includes the anti-reflection unit 121 of multiple barriers, multiple anti-reflection lists of barrier
The inorganic water oxygen barrier material of member may be the same or different.Similarly, the anti-reflection layer material of multiple anti-reflection units of barrier can
With identical, can also be different.Nothing can be adjusted by adjusting the constituent of SiNxOy and/or the constituent of SiCx ' Oy '
The refractive index of machine water oxygen barrier layer and/or antireflection layer, thus the antireflective effect being optimal.
For the light λ of single wavelength0For, as film thickness d=λ0/ 4, the refractive index n of inorganic water oxygen barrier layer needs to meet：
N in formula0For the refractive index of medium, and the medium in OLED device is mainly nitrogen, and refractive index is about 1；n2It is poly-
The refractive index of polymer substrates；n1For the refractive index of antireflection layer, n is the refractive index of inorganic water oxygen barrier layer.
By taking PI substrate as an example, n2About 1.52, so working as n=1.23n1When, it is best to the antireflective effect of PI substrate.
For a certain wave band, multiple anti-reflection units of barrier are set, by changing SiNxOy (0<X≤4/3,0≤y<2) group
The refractive index of inorganic water oxygen barrier layer is controlled between 1.45 (SiO2)~2.35 (SiNx) at ingredient, or passes through change
The constituent of SiCx ' Oy ' (0≤x '≤0.2,0≤y '≤2) make antireflection layer refractive index control 1.40 (SiCx ')~
1.45 (SiO2), to form a variety of anti-reflection units of different barriers, n is adjustable, n2It is adjustable and matched with n, it can be achieved that optimal
Antireflective effect, and widen barrier anti-reflection film system structure and polymeric substrates match window.
In one of the embodiments, the inorganic water oxygen barrier layer 1212 of single layer with a thickness of 50nm~1000nm, single layer
Antireflection layer 1214 with a thickness of 50nm~1000nm.By depositing the inorganic water oxygen barrier layer of suitable thickness, can not only drop
The caking property of metal and polymeric substrates also can be improved in the transmitance of low steam and oxygen.
Organic illuminator layer 30 includes anode layer 31, cathode layer 33 and is formed in anode layer in one of the embodiments,
Organic luminous layer 32 between 31 and cathode layer 33.
Further, organic luminous layer 32 includes hole injection layer (HIL) 321, hole transmission layer (HTL) 322, luminescent layer
(EML) 323, electron transfer layer (ETL) 324 and electron injecting layer (EIL) 325.It is appreciated that organic luminous layer 32 may include
Hole injection layer (HIL) 321, hole transmission layer (HTL) 322, luminescent layer (EML) 323, electron transfer layer (ETL) 324 and electronics
All layers of implanted layer (EIL) 325, also can according to need including it is therein one or more layers.
The above-mentioned flexible OLED devices of the application, by the way that the adjustable barrier anti-reflection film of refractive index is arranged on polymeric substrates
Architecture has widened the match window of barrier anti-reflection film system structure and polymeric substrates, has improved flexible OLED devices polymer
The transmitance of substrate improves the light emission rate of flexible OLED devices.And SiNxOy or TiO2With good water oxygen barrier property, enhancing
The water and oxygen barrier property of flexible oled substrate PI, can extend the service life of flexible OLED devices.Meanwhile MgF2With SiCxOy's
Property is stablized, MgF2Buffer layer can be served as while being used as antireflection layer with SiCxOy layers, reduce sputtering sedimentation anode to polymerization
The damage of object substrate.
Another embodiment herein provides the preparation method of above-mentioned flexible OLED devices, specifically includes following steps：
S01：Barrier anti-reflection film system structure 12 is formed in preparation on polymeric substrates 11.
Specifically, first preparing the inorganic water oxygen barrier layer of the transparent densification of one layer of 50~1000nm on polymeric substrates 11
1212, the antireflection layer 1214 of one layer of 50~1000nm is prepared on inorganic water oxygen barrier layer 1212.According to barrier anti-reflection film system
The concrete condition of structure can repeat the preparation step of inorganic water oxygen barrier layer and antireflection layer.
PECVD (Plasma Enhanced Chemical Vapor is used in one of the embodiments,
Deposition, plasma enhanced chemical vapor deposition method) in depositing Ti O on polymeric substrates 1102Or SiNxOy material,
Form inorganic water oxygen barrier layer 1212.
With TiO2Or SiNxOy is material, the inorganic water oxygen barrier layer to be formed is deposited using PECVD, not only deposition velocity
Fastly, and quality of forming film is good, and pin hole is few, is not easily cracked, and has good water and oxygen barrier property.
It in vapor deposition on inorganic water oxygen barrier layer 1212 or is sputtered using vapour deposition method or sputtering method in one of the embodiments,
MgF2Material forms antireflection layer 1214.
In one of the embodiments, using PECVD in depositing SiCx ' Oy ' material, shape on inorganic water oxygen barrier layer 1212
At antireflection layer 1214.
S02：Organic emitter layers 30 are formed in preparation in barrier anti-reflection film system structure 12.
Specifically, in the anode layer 31, the You Jifa that are sequentially depositing organic illuminator layer 30 in barrier anti-reflection film system structure 20
Photosphere 32 and cathode layer 33.Wherein organic luminous layer 32 includes hole injection layer 321, hole transmission layer 322, luminescent layer 323, electricity
Sub- transmitting layer 3 24 and electron injecting layer 325.
In one of the embodiments, in sputtering ITO (tin indium oxide) in barrier anti-reflection film system structure 12, deposition forms sun
Pole layer 31.It is appreciated that the material of anode layer 31 is not limited to ITO, it can also be the transparent conductive polymers such as Au (gold), polyaniline
Deng.
Further, anode layer 31 with a thickness of 50nm~150nm.
Hole injection layer 321,322 and of hole transmission layer are successively printed on anode layer 31 in one of the embodiments,
Electron transfer layer 324, electron injecting layer 325 and cathode layer 33 is successively deposited in luminescent layer 323 on luminescent layer 323.It can manage
Solution, 33 material of cathode layer are not limited to Al (aluminium), can also be other cathode materials.
S03：Polymeric substrates 11 are removed into glass substrate to get flexible OLED devices 100 after encapsulation.
Further include the steps that preparing polymeric substrates 11 before step S01 in one of the embodiments,.
Specially：The coated polymeric on clean glass substrate, it is toasted to obtain polymeric substrates 11.It is appreciated that
It is polymer-coated that a variety of coating methods progress such as including spin coating can be used.
Further, the glass transition temperature of polymer is higher than 200 DEG C.Preferably, polymer is PI or PES.
Further, polymeric substrates 11 with a thickness of 5~3000 μm.
This patent also provides the display equipment of an embodiment, and it includes above-mentioned flexible OLED devices.
The following are specific embodiments
Embodiment 1
S1, on the glass substrate spin coating PI obtain PI substrate through overbaking, and the transmitance for being detected PI substrate is 90%.
S2, using PECVD on PI substrate depositing Ti O2, form inorganic water oxygen barrier layer.
S3, MgF is deposited on inorganic water oxygen barrier layer using vapour deposition method2, form antireflection layer.
S4, it deposits to form anode layer in sputtering ITO on antireflection layer.
S5, HIL/HTL/EML is successively printed on the anode layer.
S6, ETL/EIL/ cathode is successively deposited on EML.
PI is removed into glass substrate after S7, encapsulation, obtains flexible OLED devices.
Embodiment 2
S1, on the glass substrate spin coating PI obtain PI substrate after toasted.
S2, SiNxOy is deposited on PI substrate using PECVD, forms inorganic water oxygen barrier layer.
S3, SiCx ' Oy ' is deposited on inorganic water oxygen barrier layer using PECVD, forms antireflection layer.
S4, it deposits to form anode layer in sputtering ITO on antireflection layer.
S5, HIL/HTL/EML is successively printed on the anode layer.
S6, ETL/EIL/ cathode is successively deposited on EML.
PI is removed into glass substrate after S7, encapsulation, obtains flexible OLED devices.
Embodiment 3
S1, on the glass substrate spin coating PI obtain PI substrate after toasted.
S2, SiNxOy is deposited on PI substrate using PECVD, forms inorganic water oxygen barrier layer.S3, using PECVD
SiCx ' Oy ' is deposited on inorganic water oxygen barrier layer, forms antireflection layer.S4, S2~S3 step 4 time is repeated.
S5, it deposits to form anode layer in sputtering ITO on antireflection layer.
S6, HIL/HTL/EML is successively printed on the anode layer.
S7, ETL/EIL/ cathode is successively deposited on EML.
PI is removed into glass substrate after S8, encapsulation, obtains flexible OLED devices.
Embodiment 4
S1, on the glass substrate spin coating PI obtain PI substrate after toasted.
S2, using PECVD on PI substrate depositing Ti O2, form inorganic water oxygen barrier layer.
S3, SiCx ' Oy ' is deposited on inorganic water oxygen barrier layer using PECVD, forms antireflection layer.S4, S2~S3 is repeated
Step 4 time.
S5, it deposits to form anode layer in sputtering ITO on antireflection layer.
S6, HIL/HTL/EML is successively printed on the anode layer.
S7, ETL/EIL/ cathode is successively deposited on EML.
PI is removed into glass substrate after S8, encapsulation, obtains flexible OLED devices.
Embodiment 5
S1, on the glass substrate spin coating PES obtain PES substrate after toasted.
S2, SiNxOy is deposited on PES substrate using PECVD, forms inorganic water oxygen barrier layer.S3, using PECVD
SiCx ' Oy ' is deposited on inorganic water oxygen barrier layer, forms antireflection layer.S4, S2~S3 step 4 time is repeated.
S5, it deposits to form anode layer in sputtering ITO on antireflection layer.
S6, HIL/HTL/EML is successively printed on the anode layer.
S7, ETL/EIL/ cathode is successively deposited on EML.
PI is removed into glass substrate after S8, encapsulation, obtains flexible OLED devices.
Comparative example 1
Comparative example 1 is substantially the same manner as Example 3, the difference is that, the material of the inorganic water oxygen barrier layer of comparative example 1 is used
SiO2Instead of SiNxOy.
Comparative example 2
Comparative example 2 is substantially the same manner as Example 3, the difference is that, comparative example 2 does not have step S2, i.e. antireflection layer is direct
It is deposited on PI substrate.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of flexible base board, which is characterized in that increase including polymeric substrates and the barrier being formed on the polymeric substrates
Permeable membrane architecture；
Wherein, the barrier anti-reflection film system structure includes one or more anti-reflection units of barrier, and the anti-reflection unit of barrier includes
Inorganic water oxygen barrier layer and the antireflection layer being formed on the inorganic water oxygen barrier layer, and the barrier anti-reflection film system structure is with institute
Inorganic water oxygen barrier layer is stated to contact with the polymeric substrates；When the anti-reflection unit of barrier is multiple, the barrier is anti-reflection
Multiple inorganic water oxygen barrier layers and multiple alternately laminated settings of the antireflection layer in film structure；
The refractive index of the inorganic water oxygen barrier layer is n, wherein 1.45<The refractive index of n≤2.35, the antireflection layer is less than or waits
In 1.45, and the refractive index of the inorganic water oxygen barrier layer is greater than the refractive index of the polymeric substrates.
2. flexible base board as described in claim 1, which is characterized in that the material of the inorganic water oxygen barrier layer is selected from TiO2With
At least one of SiNxOy, wherein 0<X≤4/3,0≤y<2, and in SiNxOy O and N atom number ratio be 0~
50:100；And/or
The material of the antireflection layer is selected from MgF2And at least one of SiCx ' Oy ', wherein 0≤x '≤0.2,0≤y '≤2, and
C and O atom number ratio are 0~10 in SiCx ' Oy '：100.
3. flexible OLED devices as claimed in claim 2, which is characterized in that the material of the inorganic water oxygen barrier layer is
SiNxOy, wherein 1≤x≤4/3,0≤y≤0.5, and O and N atom number ratio is 0~10 in SiNxOy：100.
4. flexible base board as claimed in claim 2, which is characterized in that the material of the antireflection layer is SiCx ' Oy ', wherein 0
≤ x '≤0.1,1.8≤y '≤2, and C and O atom number ratio are 4~6 in SiCx ' Oy '：100.
5. flexible base board as described in claim 1, which is characterized in that the inorganic water oxygen barrier layer of single layer with a thickness of
50nm~1000nm, the antireflection layer of single layer with a thickness of 50nm~1000nm.
6. flexible base board as described in claim 1, which is characterized in that barrier described in the barrier anti-reflection film system structure is anti-reflection
The quantity of unit is 2~4.
7. flexible base board as described in any one of claims 1 to 6, which is characterized in that the polymeric substrates be PI substrate or
PES substrate, the polymeric substrates with a thickness of 5 μm~3000 μm.
8. the preparation method of flexible base board as described in any one of claim 1~7, which is characterized in that include the following steps：
In forming the inorganic water oxygen barrier layer on the polymeric substrates；
In forming the antireflection layer on the water oxygen barrier layer to get flexible base board.
9. a kind of flexible OLED devices, which is characterized in that including the described in any item flexible base boards of claim 1~7.
10. including the display device of flexible base board as described in any one of claims 1 to 7.
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| CN108933196B (en) | 2022-03-01 |
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