CN108933194A - A kind of memristor and preparation method thereof based on schottky junction modulation - Google Patents
A kind of memristor and preparation method thereof based on schottky junction modulation Download PDFInfo
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- CN108933194A CN108933194A CN201710372367.XA CN201710372367A CN108933194A CN 108933194 A CN108933194 A CN 108933194A CN 201710372367 A CN201710372367 A CN 201710372367A CN 108933194 A CN108933194 A CN 108933194A
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- 238000002360 preparation method Methods 0.000 title claims description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 22
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 11
- 238000002207 thermal evaporation Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 230000006870 function Effects 0.000 abstract description 10
- 230000015654 memory Effects 0.000 abstract description 8
- 230000033228 biological regulation Effects 0.000 abstract description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 210000004556 brain Anatomy 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 241000282326 Felis catus Species 0.000 description 1
- 229910002781 RbAg4I5 Inorganic materials 0.000 description 1
- 229910052946 acanthite Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000013528 artificial neural network Methods 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 210000005036 nerve Anatomy 0.000 description 1
- 239000011664 nicotinic acid Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000006403 short-term memory Effects 0.000 description 1
- FSJWWSXPIWGYKC-UHFFFAOYSA-M silver;silver;sulfanide Chemical compound [SH-].[Ag].[Ag+] FSJWWSXPIWGYKC-UHFFFAOYSA-M 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000003319 supportive effect Effects 0.000 description 1
- 210000000225 synapse Anatomy 0.000 description 1
- 230000003977 synaptic function Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
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Abstract
The present invention provides a kind of memristor based on schottky junction modulation, including upper metal electrode layer, lower metal electrode layer and the polycrystalline metal oxide layer between the upper metal electrode layer and the lower metal electrode layer, wherein, the work function of the lower metal electrode layer and the polycrystalline metal oxide layer matches, and the work function of the upper metal electrode layer is higher than the work function of the polycrystalline metal oxide layer.The modulation of memristor of the invention based on schottky junction reduces dependence of the memory resistor for material conductivity, while making the regulation of resistance more flexible.
Description
Technical field
The invention belongs to area information storages, and in particular to a kind of memristor and its preparation side based on schottky junction modulation
Method.
Background technique
With the development of science and technology with the progress in epoch, people to device it is intelligentized require it is higher and higher, it is desirable to be able to
The simulation of the brain to organism, especially people is realized by intelligent device.For this purpose, researcher has done a large amount of work
Make, IBM Corporation was once simulated using brain of the computer to cat, however, the number of required computer and circuit element
Amount is huge.The imagination of all remote supermans of the complexity and power consumption of this design.
Since 2008, Strukov et al. utilized TiO2Double membrane structure come since realizing first memory resistor in kind,
Memristor receives people due to its unique nonlinear transmission characteristic, and the application prospect in terms of bionic simulation
Extensive attention.It is changed the mechanism based on Ion transfer and atom, also some materials are successfully utilized (such as in some researchers：
IGZO、Ag2S、RbAg4I5,Si:Ag and WOxDeng) prepare memory resistor.Meanwhile these memory resistors are also to some basic
Synaptic function is simulated, including：Plasticity (the spike-timing-dependent that discharge time relies on
Plasticity (STDP)), it is long when/short-term memory, study forgetting rules etc..This sees people for artificial Neural Network Simulation
Hope is arrived.However, up to the present, the research of memristor is still at the initial stage, the physical model for constructing memristor more has
Limit.Memristor material and model are further designed and improved to accuracy, expansion " the inorganic mind for promoting nerve synapse human simulation
Through cynapse device " function actively promote effect.
Summary of the invention
Therefore, the purpose of the present invention is to provide a kind of memristors based on schottky junction modulation, including upper metal electrode
Layer, lower metal electrode layer and the polycrystalline metal oxide between the upper metal electrode layer and the lower metal electrode layer
Layer, wherein the work function of the lower metal electrode layer and the fermi level of the polycrystalline metal oxide layer match, it is described on
The work function of metal electrode layer is higher than the fermi level of the polycrystalline metal oxide layer.
Memristor according to the present invention, it is preferable that the resistivity of the material of the polycrystalline metal oxide layer is 104-105
Ω*cm。
Memristor according to the present invention, it is preferable that the material of the polycrystalline metal oxide layer is ZnO, TiO2Or WO3。
Memristor according to the present invention, it is preferable that the polycrystalline metal oxide layer with a thickness of 50-100nm.
Memristor according to the present invention, it is preferable that the material of the lower metal electrode layer is Al or Zn.
Memristor according to the present invention, it is preferable that the lower metal electrode layer with a thickness of 200nm.
Memristor according to the present invention, it is preferable that the material of the upper metal electrode layer is Pt or Au.
Memristor according to the present invention, it is preferable that the upper metal electrode layer with a thickness of 80-100nm.
Memristor according to the present invention, it is preferable that the shape of the upper metal electrode layer is circular array.
The present invention also provides a kind of preparation methods of memristor, include the following steps：
Step 1：Prepare lower metal electrode layer on a si substrate using thermal evaporation method；
Step 2：Polycrystalline metal oxide layer is prepared on the lower metal electrode layer using magnetically controlled sputter method；And
Step 3：Metal electrode layer is prepared on the polycrystalline metal oxide layer using thermal evaporation method.
Compared with prior art, the modulation of memristor of the invention based on schottky junction reduces memory resistor for material
Expect the dependence of electric conductivity, while making the regulation of resistance more flexible.
Detailed description of the invention
Embodiments of the present invention is further illustrated referring to the drawings, wherein：
Fig. 1 is the structural schematic diagram according to the memristor of the embodiment of the present invention；
Fig. 2 is the rectification characteristic curve figure according to the memristor of the embodiment of the present invention under positive back bias voltage；
Fig. 3 is the current-voltage test characteristic curve graph according to the memristor of the embodiment of the present invention under continuous positive bias；
Fig. 4 is the current-voltage test characteristic curve graph according to the memristor of the embodiment of the present invention under continuous back bias voltage；
Fig. 5 is the variation diagram according to the electric current of the memristor of the embodiment of the present invention with scanning voltage number；And
Fig. 6 is the working principle diagram according to the memristor of the embodiment of the present invention.
Specific embodiment
In order to make the purpose of the present invention, technical solution and advantage are more clearly understood, and are passed through below in conjunction with attached drawing specific real
Applying example, the present invention is described in more detail.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention,
It is not intended to limit the present invention.
The embodiment of the present invention provides a kind of memristor based on schottky junction modulation, and structure is as shown in Figure 1, include thickness
Spend the Zn film of about 200nm, the polycrystalline ZnO films of thickness about 100nm on Zn film and thickness on ZnO film about
The Pt film of 150nm, the shape of Pt film are the circular array of diameter 400um, wherein Zn film is used as lower electrode, Pt film
As top electrode, the resistivity of ZnO film is about 104The work function and the fermi level phase of ZnO film of Ω * cm, Zn film
With to which Ohmic contact be presented, the work function of Pt film is higher than the fermi level of ZnO film to which Schottky contacts be presented.
The preparation method of the memristor of the present embodiment includes the following steps：
Step 1：Using the Zn film of thermal evaporation method evaporation thickness about 200nm on a si substrate as lower electrode；
Step 2：The polycrystalline ZnO films of a layer thickness about 100nm are deposited in Zn film using magnetically controlled sputter method.Specifically
Preparation condition is：Room temperature is lower than 5.0 × 10-4The base vacuum of Pa, high-purity ratio are 1:1 oxygen and sputtering argon,
The sputtering power of the growth pressure of 2Pa, ZnO ceramic sputter targets and 120W；
Step 3：The Pt film of thickness about 150nm is prepared on ZnO film using thermal evaporation method as top electrode, benefit
Make to power on the circular array of extremely shape diameter 400um with mask plate, thermal evaporation vacuum degree is 3.0 × 10-4Pa；
Step 4：Si substrate is removed, to obtain Zn/ZnO/Pt memristor.
According to other embodiments of the invention, in the preparation method of memristor of the invention, Si substrate can not be removed,
Si substrate only plays a supportive role, and has no effect on the use of memristor.
Fig. 2 shows rectification characteristic curve figure of the Zn/ZnO/Pt memristor according to an embodiment of the present invention under positive back bias voltage.
Fig. 3 shows current-voltage test characteristic curve of the Zn/ZnO/Pt memristor according to an embodiment of the present invention under continuous positive bias
Figure.Fig. 4 shows current-voltage test characteristic of the Zn/ZnO/Pt memristor according to an embodiment of the present invention under continuous back bias voltage
Curve graph.During the test, it is specified that being positive direction from Pt electrode to Zn electrode.Referring to Fig. 3, when a two-way forward scan
When voltage (0-5V-0) is applied on device, it has been found that the voltage scanning of 0-5V and the voltage scanning of 5V-0, their electric current
Value is not overlapped.When yet another forward scan voltage (0-5V-0) is applied on device, the electric current of device entirety can all subtract
It is small, and the resistance of device gradually increases.That is the resistance of device is gradually increased with the effect of forward voltage.Referring to figure
4, when a two-way negative sense scanning voltage (0--5V-0) is applied on device, equally there is the phenomenon that electric current is not overlapped, and
Whole electric current gradually increases, and the resistance of device is to be gradually reduced；That is the resistance of device is with backward voltage
It acts on and is gradually reduced, show memristor behavior.Fig. 5 be according to the electric current of the Zn/ZnO/Pt memristor of the embodiment of the present invention with
The variation diagram of scanning voltage number shown in Fig. 3 and Fig. 4, it can be seen that device current under the action of forward bias by
Reduction gradually gradually increases under the action of reverse biased, that is to say, that：Under the action of forward bias, device resistance increases
Add, under backward voltage effect, device resistance reduces.Show that external voltage has modulating action to the resistance of memory resistor.
Fig. 6 is to show memristor model according to the working principle diagram of the Zn/ZnO/Pt memristor of the embodiment of the present invention：
For Zn/ZnO/Pt memory resistor, its initial state is presented rectification characteristic and illustrates referring to fig. 2 at the interface Pt/ZnO
There are schottky junctions.Due to that can have a large amount of Lacking oxygen defects in polycrystalline ZnO films, in Pt/ZnO schottky junction built in field
Under effect, Lacking oxygen can be deposited in the interface Pt/ZnO.When negative bias acts on the electrode side Pt, electrons are infused from Pt electrode
Enter to the interface Pt/ZnO, can be captured by the Lacking oxygen that interface is accumulated.The content of Lacking oxygen will reduce, so that the gesture of schottky junction
It builds width and barrier height all increases, the resistance of device can gradually increase.When forward bias acts on the electrode side Pt, Pt/
The electronics at the interface ZnO is separated with Lacking oxygen, and the barrier width and barrier height of schottky junction can reduce, and makes the resistance of device can be by
It is decrescence small, realize " memory " of memristor.
According to other embodiments of the invention, middle layer can be using any other Polycrystalline Metals oxidation well known in the art
Object, such as TiO2、WO3Resistivity Deng, metal oxide is 104-105Ω * cm, with a thickness of 50-100nm.
According to other embodiments of the invention, lower electrode can use the fermi level of work function and polycrystalline metal oxide
Other metal electrodes to match, such as Al.
According to other embodiments of the invention, top electrode can be higher than Fermi's energy of polycrystalline metal oxide using work function
Other metal electrodes of grade, such as Au, top electrode with a thickness of 80-100nm.In addition, the shape of top electrode is also not necessarily limited to circle
Array can use any other shapes well known in the art.
Although the present invention has been described by means of preferred embodiments, the present invention is not limited to described here
Embodiment, without departing from the present invention further include made various changes and variation.
Claims (10)
1. a kind of memristor based on schottky junction modulation, including upper metal electrode layer, lower metal electrode layer and on described
Polycrystalline metal oxide layer between metal electrode layer and the lower metal electrode layer, wherein the function of the lower metal electrode layer
The fermi level of function and the polycrystalline metal oxide layer matches, and the work function of the upper metal electrode layer is higher than described more
The fermi level of brilliant metal oxide layer.
2. memristor according to claim 1, wherein the resistivity of the material of the polycrystalline metal oxide layer is 104-
105Ω*cm。
3. memristor according to claim 2, wherein the material of the polycrystalline metal oxide layer is ZnO, TiO2Or
WO3。
4. memristor according to claim 1, wherein the polycrystalline metal oxide layer with a thickness of 50-100nm.
5. memristor according to claim 1, wherein the material of the lower metal electrode layer is Al or Zn.
6. memristor according to claim 1, wherein the lower metal electrode layer with a thickness of 200nm.
7. memristor according to claim 1, wherein the material of the upper metal electrode layer is Pt or Au.
8. memristor according to claim 1, wherein the upper metal electrode layer with a thickness of 80-100nm.
9. memristor according to claim 1, wherein the shape of the upper metal electrode layer is circular array.
10. a kind of preparation method of memristor according to claim 1 to 9, includes the following steps：
Step 1：Prepare lower metal electrode layer on a si substrate using thermal evaporation method；
Step 2：Polycrystalline metal oxide layer is prepared on the lower metal electrode layer using magnetically controlled sputter method；And
Step 3：Metal electrode layer is prepared on the polycrystalline metal oxide layer using thermal evaporation method.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112563415A (en) * | 2020-11-30 | 2021-03-26 | 中国科学院微电子研究所 | Multifunctional synapse device and manufacturing method thereof |
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