CN108931494B - Terahertz attenuation total reflection detection device based on high-resistance silicon and application method thereof - Google Patents
Terahertz attenuation total reflection detection device based on high-resistance silicon and application method thereof Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 68
- 239000010703 silicon Substances 0.000 title claims abstract description 68
- 238000001514 detection method Methods 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 67
- 238000001228 spectrum Methods 0.000 claims abstract description 11
- 230000003287 optical effect Effects 0.000 claims description 11
- 238000005102 attenuated total reflection Methods 0.000 claims description 9
- 238000010146 3D printing Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000001328 terahertz time-domain spectroscopy Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
- G01N2021/1725—Modulation of properties by light, e.g. photoreflectance
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- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
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- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
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- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention provides a terahertz attenuation total reflection detection device based on high-resistance silicon and a use method thereof, and the terahertz attenuation total reflection detection device comprises a sample cell frame, an inverted triangular prism-shaped high-resistance silicon prism fixed below the sample cell frame, wherein the middle part of the sample cell frame is provided with a hollowed part, the bottom surface of the triangular prism-shaped high-resistance silicon prism and the hollowed part form a sample cell cavity for placing a resolution object, the upper surface of the hollowed part is detachably connected with a sample cell cover, the terahertz wave is utilized to generate attenuation total reflection inside the high-resistance silicon prism, and then an evanescent wave is formed at the bottom of the prism to react with a sample, so that terahertz spectrum detection of a water-containing and powdery sample is realized, and the terahertz spectrum detection device is simple in structure and convenient to debug. The terahertz attenuation total reflection detection device based on high-resistance silicon is used, and has potential engineering application value in the aspect of distinguishing the composition components of an object and analyzing the physical and chemical properties of the object.
Description
Technical Field
The invention relates to a terahertz attenuation total reflection detection device based on high-resistance silicon and a use method thereof.
Background
Terahertz (THz) is one of the units of fluctuation frequency. The THz frequency band is approximately between 0.1 and 10THz, and is a novel radiation source with a plurality of unique advantages. Most DNA molecules and biomacromolecules have characteristic vibration and rotation energy levels related to structures in terahertz wave bands, and have unique responses to terahertz waves. Therefore, the Terahertz wave band has unique characteristic spectrums in the Terahertz wave band, and according to the fingerprint spectrums, the Terahertz time-domain spectroscopy technology (Terahertz time-domain spectroscopy, THz-TDS) can distinguish the composition components of the object, analyze the physical and chemical properties of the object, and provide relevant theoretical basis and detection technology for anti-drug, anti-terrorism, explosion elimination and the like. However, water in the environment has strong absorption characteristics to terahertz waves, and a transmission type or reflection type terahertz time-domain spectrum system is directly adopted for detection: for aqueous samples, the terahertz signal obtained by the test is very weak; for a powdery sample, the sample must be compressed into a block before the detection, which damages the molecular structure of the sample to some extent, and causes inconvenience to the detection.
Disclosure of Invention
The invention improves the problems, namely the technical problem to be solved by the invention is that the existing detection of the water-containing and powdery samples by adopting the terahertz wave band detection means has the defect of weak signal detection trouble.
The specific embodiments of the invention are: the terahertz attenuation total reflection detection device based on the high-resistance silicon is characterized by comprising a sample cell frame and an inverted triangular prism-shaped high-resistance silicon prism fixed below the sample cell frame, wherein the middle part of the sample cell frame is provided with a hollowed-out part, the bottom surface of the triangular prism-shaped high-resistance silicon prism and the hollowed-out part form a sample cell cavity for placing a resolution object, and the upper surface of the hollowed-out part is detachably connected with a sample cell cover.
Further, sample cell frame lower part fixedly connected with base, the base lateral part is provided with linear moving platform, linear moving platform includes the base plate, be provided with longitudinal rail on the base plate, sliding fit has the fly leaf on the longitudinal rail, the fly leaf lateral part extends there is the fixed block, the fixed block middle part is fixed with adjusting screw, the base plate lateral part extends there is the base, adjusting screw's lower extreme and base screw thread fit, base and fly leaf fixed connection realize the reciprocates of fly leaf through adjusting screw.
Further, a sealing ring is arranged between the sample tank cover and the bottom surface of the triangular prism-shaped high-resistance silicon prism.
Further, the sample cell frame includes the frame body that the cross-section is the U type, sample cell frame lower part fixedly connected with spacing triangular prism shape high resistance silicon prism's support frame, the support frame is provided with a pair of and a pair of support frame face in opposite directions have with triangular prism shape high resistance silicon prism both sides matched with inclined plane in order to spacing triangular prism shape high resistance silicon prism.
Further, the sample cell cover is fixed on the sample cell frame through a penetrating screw, and a butterfly nut is arranged on the screw.
Furthermore, a crutch-shaped linear moving platform fixing plate is fixedly connected to the side of the linear moving platform.
The invention also discloses a use method of the terahertz attenuated total reflection detection device based on the high-resistance silicon, which comprises the following steps of:
(1) Fixing the linear moving platform fixing plate on the optical platform, so as to fix the sample cell frame on the optical platform;
(2) When the detection is carried out, a sample is put into the sample cell chamber, and then the sample cell cover is covered to enable the powder sample to be tightly distributed at the bottom of the triangular prism-shaped high-resistance silicon prism;
(3) In the terahertz system is built at the side of the optical platform, the terahertz system comprises a terahertz transmitter and a terahertz detector, the terahertz transmitter and the terahertz detector are respectively arranged at two sides of a terahertz attenuation total reflection detection device of high-resistance silicon, terahertz waves emitted by the terahertz transmitter are parallel to one side of a triangular prism-shaped high-resistance silicon prism and are incident in parallel, attenuation total reflection occurs in the prism, evanescent waves are formed at the bottom of the prism to react with a sample, the evanescent waves are parallel to the other side of the prism, the handle of the linear moving platform is rotated, the triangular prism-shaped high-resistance silicon prism is adjusted to the optimal position, the terahertz signal intensity detected by the terahertz detector can be strongest, and the terahertz signals are transmitted to a signal processing system to form a terahertz detection spectrum of the sample.
Furthermore, the terahertz attenuation total reflection detection device based on the high-resistance silicon is manufactured by adopting PLA three-dimensional printing materials for a sample cell frame, a support frame, a sample cell cover, a sample cell frame base and a linear moving platform support plate.
Compared with the prior art, the invention has the following beneficial effects:
(1) According to the terahertz attenuated total reflection detection device based on the high-resistance silicon, the terahertz waves are utilized to generate attenuated total reflection in the high-resistance silicon prism, then evanescent waves are formed at the bottom of the prism to react with the sample, so that terahertz spectrum detection of the water-containing and powdery sample is realized, and the device is simple in structure and convenient to debug. The terahertz attenuation total reflection detection device based on high-resistance silicon is used, and has potential engineering application value in the aspect of distinguishing the composition components of an object and analyzing the physical and chemical properties of the object.
(2) In addition, the design of the sample cell cover plate of the terahertz attenuation total reflection detection device based on high-resistance silicon adopts the sample cell cover with the raised middle, and when the terahertz spectrum detection of the powder sample is carried out, the powder sample is tightly distributed at the bottom of the triangular prism-shaped high-resistance silicon prism by pressing the sample cell cover, so that the detection effect is improved.
(3) The triangular prism-shaped prism selects high-quality high-resistance silicon as a processing material, so that the characteristic that the high-resistance silicon has small loss in the terahertz frequency band can be fully exerted, and the intensity of terahertz ATR detection signals is ensured.
(4) The embodiment utilizes the advantage that the linear moving platform can realize high-precision positioning, thereby realizing that the triangular prism-shaped high-resistance silicon prism is conveniently and rapidly adjusted to the optimal position in the sample detection process, and enabling the terahertz signal intensity detected by the terahertz detector to reach the strongest.
In addition, the embodiment of the invention adopts a rapid forming method capable of utilizing three-dimensional printing, adopts PLA three-dimensional printing materials to process parts such as a sample cell frame, a triangular prism-shaped high-resistance silicon prism supporting plate, a sample cell cover with a raised middle part, a sample cell frame base, a linear moving platform supporting plate and the like, and greatly reduces the processing period and cost and the whole weight of the detection device.
Drawings
FIG. 1 is a side view of an ATR detection apparatus of the present invention;
FIG. 2 is a front view of the ATR detection apparatus of the present invention;
FIG. 3 is a left side view of the ATR detection apparatus of the present invention;
FIG. 4 is a side view of the ATR detection apparatus of the present invention without a sample cell cover;
FIG. 5 is a cross-sectional view of the sample cell cover of the ATR detection device of the present invention;
FIG. 6 is a schematic diagram of the detection principle of the invention;
fig. 7 is a schematic structural view of a support frame according to the present invention.
Detailed Description
The invention will be described in further detail with reference to the drawings and the detailed description.
As shown in fig. 1 to 7, a terahertz attenuated total reflection detection device based on high-resistance silicon comprises a sample cell frame 10, an inverted triangular prism-shaped high-resistance silicon prism 20 fixed below the sample cell frame 10, wherein a hollowed-out portion 110 is arranged in the middle of the sample cell frame 10, a sample cell cavity 120 for accommodating a resolution object is formed by the bottom surface of the triangular prism-shaped high-resistance silicon prism and the hollowed-out portion 110, and a sample cell cover 130 is detachably connected to the upper surface of the hollowed-out portion.
In this embodiment, the cross section of the sample cell frame 10 is in an inverted U-shaped structure, the bottom surface of the triangular prism-shaped high-resistance silicon prism 20, i.e. the end with a larger cross section faces upwards, and in this embodiment, the bottom surface of the triangular prism-shaped high-resistance silicon prism 20 can shield the hollowed-out portion 110, and the bottom surface of the triangular prism-shaped high-resistance silicon prism 20 forms a placement platform for placing the articles to be tested.
The upper surface of fretwork portion 110 is detachably connected with sample cell lid 130 and is used for shielding sample cell cavity 120, utilizes a word head screw 131 to fix sample cell lid 130 in this embodiment sample cell frame on, and a word head screw 131 runs through the both ends of sample cell lid 130, is provided with wing nut 132 on the word head screw 131 and can lock sample cell lid 130 through wing nut 132, can realize leading and location the installation of the bellied sample cell lid in the middle of being through a word head screw 131.
In order to improve the tightness of the matching surface between the sample cell cover 130 and the bottom surface of the triangular prism-shaped high-resistance silicon prism 20, a sealing ring is arranged between the sample cell cover 130 and the bottom surface of the triangular prism-shaped high-resistance silicon prism 20.
In order to conveniently place the triangular prism shaped high-resistance silicon prism 20, a supporting frame 30 for limiting the triangular prism shaped high-resistance silicon prism is fixedly connected to the lower portion of the sample cell frame 10, a pair of supporting frames 30 are arranged, opposite faces of the supporting frames are provided with inclined planes matched with two sides of the triangular prism shaped high-resistance silicon prism to limit the triangular prism shaped high-resistance silicon prism, and a notch 310 exposing the lower portion of the triangular prism shaped high-resistance silicon prism is arranged at the lower portion of the supporting frame 30.
The opposite surfaces of the supporting frame 30 are mutually matched with the triangular prism-shaped high-resistance silicon prism 20 to support the triangular prism-shaped high-resistance silicon prism 20, and the supporting frame 30 is fixed on the lower portion of the sample cell frame 10 through screws.
In this embodiment, the lower portion of the sample cell frame 10 is fixedly connected with the base 140, the side portion of the base 140 is provided with the linear moving platform 150, the linear moving platform adopted in this embodiment is generally a conventional single-axis, X-axis or Z-axis linear moving platform, the sample cell frame 10 and the triangular prism-shaped high-resistance silicon prism 20 thereof are driven to integrally move by the screw-nut pair, in this embodiment, the triangular prism-shaped high-resistance silicon prism 20 is fixedly connected with the base 140, and the base is further fixedly connected with the linear moving platform 150, and in this embodiment, the linear moving platform 150 can be a manual displacement platform of the model of the THORLABS company, LNR 25M.
The specific linear moving platform 150 includes the base plate 151, be provided with the longitudinal rail 152 on the base plate 151, sliding fit has fly leaf 153 on the longitudinal rail, the fly leaf lateral part extends there is fixed block 154, fixed block 154 middle part is fixed with adjusting screw 155, is provided with the scale on the general high accuracy linear moving platform 150 its condition screw rod, the base 151 lateral part extends there is base 158, adjusting screw's lower extreme and base screw thread fit, base and fly leaf fixed connection promptly realize the reciprocates of fly leaf through adjusting screw.
A crutch-shaped linear motion stage fixing plate 156 is fixedly connected to the side of the linear motion stage 150, and in this embodiment, the linear motion stage fixing plate 156 is fixed to the linear motion stage 150 by means of a hexagon socket head cap screw 157.
In this embodiment, the sample cell frame base is fixed on one side of the linear moving platform by the cylindrical head screw 111 during installation, then the sample cell frame with the triangular prism-shaped high-resistance silicon prism is fixed on the sample cell frame base by the hexagonal head screw, and the lifting and positioning of the triangular prism-shaped high-resistance silicon prism can be conveniently, quickly and accurately realized by rotating the screw rod of the linear moving platform, and when the terahertz spectrum detection system is built, the fixing plate 156 of the linear moving platform is fixed on the optical platform by the hexagonal head screw, so that the whole terahertz ATR detection device is fixed on the optical platform.
When in use, (1) the linear moving platform fixing plate is fixed on the optical platform, so that the sample cell frame is fixed on the optical platform;
(2) When the detection is carried out, a sample is put into the sample cell chamber, and then the sample cell cover is covered to enable the powder sample to be tightly distributed at the bottom of the triangular prism-shaped high-resistance silicon prism;
(3) In the terahertz system built beside the optical platform, the terahertz system comprises a terahertz transmitter 410 and a terahertz detector 420, the terahertz transmitter 410 and the terahertz detector 420 are respectively arranged on two sides of a terahertz attenuated total reflection detection device of high-resistance silicon, terahertz waves emitted by the terahertz transmitter are parallel incident from one surface of a triangular prism-shaped high-resistance silicon prism 20, attenuated total reflection occurs in the prism, evanescent waves are formed at the bottom of the prism to react with a sample, the evanescent waves are parallel emitted from the other surface of the prism, a handle of the linear moving platform is rotated, the triangular prism-shaped high-resistance silicon prism is adjusted to an optimal position, the terahertz signal intensity detected by the terahertz detector can be strongest, and the terahertz waves are transmitted to a signal processing system 430 to form a terahertz detection spectrum of the sample 100.
In this embodiment, the terahertz attenuation total reflection detection device based on high-resistance silicon uses PLA three-dimensional printing materials to manufacture a sample cell frame, a support frame, a sample cell cover, a sample cell frame base, and a linear moving platform support plate.
Any of the above-described embodiments of the present invention disclosed herein, unless otherwise stated, if they disclose a numerical range, then the disclosed numerical range is the preferred numerical range, as will be appreciated by those of skill in the art: the preferred numerical ranges are merely those of the many possible numerical values where technical effects are more pronounced or representative. Since the numerical values are more and cannot be exhausted, only a part of the numerical values are disclosed to illustrate the technical scheme of the invention, and the numerical values listed above should not limit the protection scope of the invention.
If the terms "first," "second," etc. are used herein to define a part, those skilled in the art will recognize that: the use of "first" and "second" is used merely to facilitate distinguishing between components and not otherwise stated, and does not have a special meaning.
Meanwhile, if the above invention discloses or relates to parts or structural members fixedly connected with each other, the fixed connection may be understood as follows unless otherwise stated: detachably fixed connection (e.g. using bolts or screws) can also be understood as: the non-detachable fixed connection (e.g. riveting, welding), of course, the mutual fixed connection may also be replaced by an integral structure (e.g. integrally formed using a casting process) (except for obviously being unable to use an integral forming process).
In addition, terms used in any of the above-described aspects of the present disclosure to express positional relationship or shape have meanings including a state or shape similar to, similar to or approaching thereto unless otherwise stated.
Any part provided by the invention can be assembled by a plurality of independent components, or can be manufactured by an integral forming process.
Finally, it should be noted that the above-mentioned embodiments are only for illustrating the technical scheme of the present invention and are not limiting; while the invention has been described in detail with reference to the preferred embodiments, those skilled in the art will appreciate that: modifications may be made to the specific embodiments of the present invention or equivalents may be substituted for part of the technical features thereof; without departing from the spirit of the invention, it is intended to cover the scope of the invention as claimed.
Claims (3)
1. The terahertz attenuation total reflection detection device based on the high-resistance silicon is characterized by comprising a sample cell frame, an inverted triangular prism-shaped high-resistance silicon prism fixed below the sample cell frame, wherein the middle part of the sample cell frame is provided with a hollowed-out part, the bottom surface of the triangular prism-shaped high-resistance silicon prism and the hollowed-out part form a sample cell cavity for placing a resolution object, and the upper surface of the hollowed-out part is detachably connected with a sample cell cover;
the lower part of the sample cell frame is fixedly connected with a base, the side part of the base is provided with a linear moving platform, the linear moving platform comprises a base plate, a longitudinal guide rail is arranged on the base plate, a movable plate is slidably matched on the longitudinal guide rail, a fixed block is extended on the side part of the movable plate, an adjusting screw is fixed in the middle of the fixed block, a base is extended on the side part of the base plate, the lower end of the adjusting screw is in threaded fit with the base, the base is fixedly connected with the movable plate, and the movable plate can move up and down through the adjusting screw;
a sealing ring is arranged between the sample tank cover and the bottom surface of the triangular prism-shaped high-resistance silicon prism;
the sample cell frame comprises a frame body with a U-shaped section, the lower part of the sample cell frame is fixedly connected with a support frame of a limit triangular prism-shaped high-resistance silicon prism, the support frame is provided with a pair of support frames, and the opposite surfaces of the pair of support frames are provided with inclined planes matched with two sides of the triangular prism-shaped high-resistance silicon prism so as to limit the triangular prism-shaped high-resistance silicon prism;
the sample cell cover is fixed on the sample cell frame through a penetrating screw, and a butterfly nut is arranged on the screw;
and a crutch-shaped linear moving platform fixing plate is fixedly connected to the side of the linear moving platform.
2. The method for using the terahertz attenuated total reflection detection device based on the high-resistance silicon is characterized by comprising the following steps of:
(1) Fixing the linear moving platform fixing plate on the optical platform, so as to fix the sample cell frame on the optical platform;
(2) When the detection is carried out, a sample is put into the sample cell chamber, and then the sample cell cover is covered to enable the powder sample to be tightly distributed at the bottom of the triangular prism-shaped high-resistance silicon prism;
(3) The terahertz system is built at the side of the optical platform and comprises a terahertz transmitter and a terahertz detector, the terahertz transmitter and the terahertz detector are respectively arranged at two sides of a terahertz attenuation total reflection detection device of high-resistance silicon, terahertz waves emitted by the terahertz transmitter are parallel to one side of a triangular prism-shaped high-resistance silicon prism and are incident in parallel, attenuation total reflection occurs in the prism, evanescent waves are formed at the bottom of the prism to react with a sample, the evanescent waves are parallel to the other side of the prism, the handle of the linear moving platform is rotated, the triangular prism-shaped high-resistance silicon prism is adjusted to the optimal position, the terahertz signal intensity detected by the terahertz detector can be strongest, and the terahertz signals are transmitted to the signal processing system to form a terahertz detection spectrum of the sample.
3. The method for using the terahertz attenuated total reflection detection device based on the high-resistance silicon according to claim 2, wherein the terahertz attenuated total reflection detection device based on the high-resistance silicon is manufactured by adopting PLA three-dimensional printing materials for a sample cell frame, a support frame, a sample cell cover, a sample cell frame base and a linear moving platform support plate.
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| CN201810682839.6A CN108931494B (en) | 2018-06-28 | 2018-06-28 | Terahertz attenuation total reflection detection device based on high-resistance silicon and application method thereof |
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| CN110553997A (en) * | 2019-09-09 | 2019-12-10 | 中国人民解放军陆军军医大学第一附属医院 | Early cancer detection method based on terahertz attenuated total reflection mode |
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| WO2012132647A1 (en) * | 2011-03-29 | 2012-10-04 | 浜松ホトニクス株式会社 | Terahertz-wave spectrometer |
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| CN107421915A (en) * | 2017-09-08 | 2017-12-01 | 中国工程物理研究院流体物理研究所 | A kind of living cells based on terahertz time-domain decay total reflection spectrum monitors experimental method in real time |
| DE202017006067U1 (en) * | 2017-11-24 | 2018-01-18 | Anja Müller | Dismountable bracket for ATR elements |
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