CN108919572A - Light emitting device and backlight module using same - Google Patents
Light emitting device and backlight module using same Download PDFInfo
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- CN108919572A CN108919572A CN201810763176.0A CN201810763176A CN108919572A CN 108919572 A CN108919572 A CN 108919572A CN 201810763176 A CN201810763176 A CN 201810763176A CN 108919572 A CN108919572 A CN 108919572A
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- 239000000758 substrate Substances 0.000 claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 238000004020 luminiscence type Methods 0.000 claims description 59
- 239000010409 thin film Substances 0.000 claims description 18
- 230000008878 coupling Effects 0.000 claims description 13
- 238000010168 coupling process Methods 0.000 claims description 13
- 238000005859 coupling reaction Methods 0.000 claims description 13
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 claims description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- 239000010408 film Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims 1
- 230000000737 periodic effect Effects 0.000 description 24
- 239000004973 liquid crystal related substance Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 210000004209 hair Anatomy 0.000 description 3
- 238000009740 moulding (composite fabrication) Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- -1 ITO) it is made Chemical compound 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1334—Constructional arrangements; Manufacturing methods based on polymer dispersed liquid crystals, e.g. microencapsulated liquid crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134318—Electrodes characterised by their geometrical arrangement having a patterned common electrode
Abstract
A light emitting device and a backlight module are provided, the light emitting device includes a substrate, a driving circuit, an insulating layer, a metal pattern layer and a light emitting unit. The drive circuit is arranged on the substrate, the insulating layer is arranged on the substrate and covers the drive circuit, and the metal pattern layer is arranged on the insulating layer. The metal pattern layer comprises a plurality of connecting pads and a reflecting layer, the connecting pads are separated from each other and are respectively and electrically coupled with the driving circuit, and the reflecting layer is separated from the connecting pads and is positioned on the periphery of the connecting pads. The light emitting unit is arranged on the connecting pads. The backlight module comprises a light-emitting device, a scattering layer and an opposite substrate. The scattering layer is arranged on the insulating layer, the metal pattern layer and the light-emitting unit. The opposite substrate is opposite to the substrate, and the scattering layer is arranged between the light-emitting device and the opposite substrate.
Description
Technical field
The present invention relates to a kind of light emitting devices, and in particular to a kind of light emitting device that can be used for display device with use its
Backlight module.
Background technique
Present ultra-thin display device, most of is liquid crystal display.Liquid crystal display generally includes liquid crystal display panel and back
Optical module, wherein liquid crystal display panel itself will not shine, and backlight module then can be used as light source.Backlight module has alignment liquid crystal display panel
Light-emitting surface, and area source (light can be evenly distributed injection from light-emitting surface), the light of this area source can be formed on light-emitting surface
Line can pass through liquid crystal display panel, and the elements such as driving circuit, liquid crystal molecule and colored filter in liquid crystal display panel can then determine often
Unit pixel particular point in time allow across light quantity, finally will form image on the display surface of liquid crystal display panel.And it is
Liquid crystal display panel is allowed to generate quality preferable image, backlight module need to be capable of forming the area source that light is evenly distributed.
In order to which light can equably be projected from light-emitting surface, existing backlight module in addition to include luminous component other than,
It further include multilayer optical device (such as prismatic lens, diffusion barrier, light guide plate and reflector plate), effect is allowed caused by luminous component
Light can be uniformly distributed by modes such as the scatterings, refraction and diffusion of these optical elements.The luminous component of existing backlight module
Straight-down negative and two kinds of side entering type can be divided into, since straight-down negative luminous component can be more more uniform than side entering type luminous component, and due to
At present the technology of light emitting diode graduallys mature, therefore the product using light emitting diode as luminous component becomes increasingly popular.It is carrying on the back
Optical module using upper, by light emitting diode arrange at array form using the product as straight-down negative luminous component it is also luxuriant based on
Stream.
As described in the prior art, existing backlight module, under having significant proportion that can be used as directly using light emitting diode matrix
Formula luminous component.Even if but using this straight-down negative luminous component, in order to make light more uniform, in existing backlight module
Multilayer optical device be still indispensable, such as prismatic lens, diffusion barrier and reflector plate.These multilayer optical devices can allow back
The volume of optical module is larger, thicker and heavier.Also, in the production of backlight module, in addition to needing to manufacture prismatic lens respectively, expanding
It dissipates film, reflector plate, light emitting diode matrix and is arranged except the substrate of these light emitting diode matrixs, it will also be one by one by these portions
Part group, which erects, to be come.Due to production process time and effort consuming, production cost will certainly be allowed high.
In view of this, the present invention proposes a kind of light emitting device and the backlight module using it, can be generated to backlight module
Uniform area source, moreover it is possible to reduce volume, thickness and the weight of backlight module, while production cost can also be reduced.
Summary of the invention
In an embodiment of the present invention, a kind of light emitting device include substrate, driving circuit, insulating layer, metal pattern layer with
Luminescence unit.Driving circuit is set on substrate, and insulating layer is set on substrate and covers driving circuit, and metal pattern layer is set
It is placed on insulating layer.Metal pattern layer includes multiple connection gaskets and reflecting layer, and multiple connection gaskets are separated from each other and the electrical coupling of difference
Driving circuit is connect, reflecting layer separates and be located at the periphery of multiple connection gaskets with multiple connection gaskets.Luminescence unit is set to multiple companies
On connection pad.
In an embodiment of the present invention, reflecting layer is at least one opening, and multiple connection gaskets are located in this opening.
In an embodiment of the present invention, reflecting layer has the multiple separated regions being separated from each other, multiple separated region difference
Positioned at the surrounding of multiple connection gaskets.
In an embodiment of the present invention, light emitting device further includes multiple conductive patterns, and each conductive pattern is located at corresponding company
Between connection pad and driving circuit and couple connection gasket and driving circuit.
In an embodiment of the present invention, multiple conductive patterns are as made by indium tin oxide.
In an embodiment of the present invention, driving circuit includes thin film transistor (TFT), and thin film transistor (TFT) couples corresponding multiple companies
One of connection pad.
In an embodiment of the present invention, in the vertical direction of substrate, reflecting layer and thin film transistor (TFT) are overlapped.
In an embodiment of the present invention, metal pattern layer is as made by aluminium, copper or silver.
In an embodiment of the present invention, between the adjacent connection gasket center of two be provided in the connection gasket of luminescence unit away from
From between 10 microns and 900 microns.
In an embodiment of the present invention, a kind of backlight module includes foregoing light emitting device, scattering layer and opposite base
Plate.Scattering layer is set on insulating layer, metal pattern layer and luminescence unit.Opposite substrate is oppositely arranged with substrate, wherein scattering
Layer is set between light emitting device and opposite substrate.
In an embodiment of the present invention, scattering layer is high polymer dispersed liquid crystal.
In conclusion the light emitting device of embodiment according to the present invention and using its backlight module, not only backlight module
It can produce uniform area source, can also reduce volume, thickness and the weight of backlight module, while can also reduce production cost.
Describe detailed features and advantage of the invention in detail in embodiments below, content is enough to make any ability
Field technique personnel understand technology contents of the invention and implement accordingly, and according to content disclosed in this specification, claim
And attached drawing, it is any to be familiar with relevant art and be readily understood upon the relevant purpose of the present invention and advantage.
Detailed description of the invention
Fig. 1 show the top view of the light emitting device of first embodiment of the invention；
Fig. 2 show the diagrammatic cross-section at the line segment 2-2 of Fig. 1；
Fig. 3 show the partial top view of the light emitting device of Fig. 1；
Fig. 4 show the diagrammatic cross-section of the light emitting device of another embodiment of the present invention；
Fig. 5 show the partial top view of the light emitting device of Fig. 4；
Fig. 6 show the top view of the light emitting device of second embodiment of the invention；
Fig. 7 show the top view of the light emitting device of third embodiment of the invention；
Fig. 8 show the top view of the light emitting device of fourth embodiment of the invention；And
Fig. 9 show the schematic side view of the backlight module of one embodiment of the invention.
Description of symbols：
20 backlight modules
30 light emitting devices
100 substrates
200 driving circuits
210 semiconductor layers
220 incoming lines
222 lower layer's incoming lines
230 outlet lines
232 lower layer's outlet lines
240 control routes
250 connection lines
260 surrounding routes
Route around 262 lower layers
270 auxiliary electrodes
300 insulating layers
400 metal pattern layers
410 connection gaskets
4101 first connection gaskets
4102 second connection gaskets
412 connection gasket centers
415 connections pair
420 reflecting layer
422 openings
The separated region 424a, 424b, 424c
426 periodic patterns
500 luminescence units
600 conductive patterns
610 perimeter conductive patterns
700 scattering layers
702 high polymer dispersed liquid crystals
710 opposite substrates
720 sealing elements
D drain electrode
Dis distance
Dv vertical direction
G grid
S source electrode
TFT thin film transistor (TFT)
Specific embodiment
Fig. 1 and Fig. 2 are please referred to, Fig. 1 show the top view of the light emitting device 30 of first embodiment of the invention, shown in Fig. 2
For the diagrammatic cross-section at the line segment 2-2 of Fig. 1.In the present embodiment, light emitting device 30 is used for the backlight module of liquid crystal display
In, and as straight-down negative luminous component, to allow the backlight module to can produce area source, but not limited to this.Such as Fig. 1 and Fig. 2 institute
Show, in the present embodiment, light emitting device 30 includes substrate 100, driving circuit 200, insulating layer 300, metal pattern layer 400 and hair
Light unit 500.For convenience of explanation, driving circuit is not shown in Fig. 1.
As shown in Fig. 2, driving circuit 200 is to be set on substrate 100, and insulating layer 300 may include the first insulating layer
301, second insulating layer 302, third insulating layer 303, insulating layer 300 are set on substrate 100, and the third in insulating layer 300
Insulating layer 303 can cover driving circuit 200.And metal pattern layer 400 is set on the third insulating layer 303 in insulating layer 300,
And metal pattern layer 400 includes multiple connection gaskets 410 and reflecting layer 420.As shown in Figures 1 and 2, multiple connection gaskets 410 are those
This separation, and these connection gaskets 410 can distinguish electric property coupling driving circuit 200.Reflecting layer 420 and multiple connection gaskets 410
It is separated from each other, and reflecting layer 420 is located at the periphery of multiple connection gaskets 410, and luminescence unit 500 is then set to multiple connections
On pad 410.
In the present embodiment, two adjacent and electrically isolated connection gaskets 410 are considered as one group, and one group of connection gasket 410 is (also
Referred to as 415) connection is to being for being electrically connected a luminescence unit 500.For example, two connection gaskets 410, i.e., one connection is to 415 points
The positive electrode and negative electrode of corresponding luminescence unit 500 are not connected.In other words, it connects and luminescence unit 500 is identical to 415 quantity
Quantity.
Although it will be understood that light emitting device shown in FIG. 1 30 includes four luminescence units 500, and this four luminous single
Member 500 is arranged as two multiplied by two array, however the arrangement form of quantity and array herein in regard to luminescence unit 500, be for
Can be become apparent from terms of description is with attached drawing it is understandable, rather than for limiting the present invention.In different embodiments, luminescence unit
500 quantity can be fewer of more than four with design according to demand, and if array made of luminescence unit 500 arranges defines
It is x multiplied by y, then x and y can regard demand and respectively any positive integer.In different embodiments, the arrangement of luminescence unit 500
Mode is also possible to irregular distribution or is arranged as the form of special pattern, and is not limited to x multiplied by the array of y.Some
In embodiment, substrate 100 can be glass substrate, but not limited to this.
In the present embodiment, reflecting layer 420 has at least one opening 422, and is provided with one group of company in each opening 422
Connection pad 410, also known as connection is to 415 (that is, two connection gaskets 410 for connecting the positive and negative electrode of the same luminescence unit 500).Such as Fig. 1
Shown, in the present embodiment, there are four openings 422 for the tool of reflecting layer 420, and light emitting device 30 has four groups of connection gaskets 410.Each group
Connection gasket 410 is located in each opening 422.Pass through, aligned in luminescence unit 500 and after engaging, towards substrate 100 and edge
Under the upright projection of vertical direction Dv (as shown in Figure 2), reflecting layer 420 can be individually around each luminescence unit 500.When each
When a luminescence unit 500 shines, it can be used to reflect luminescence unit 500 around the reflecting layer 420 of each luminescence unit 500 and be penetrated
Light out.
In some embodiments, metal pattern layer 400 can be and be made of metal materials such as aluminium, copper or silver.Driving circuit 200
It can be formed for conductive material such as metal wire, and luminescence unit 500 is light emitting diode.As shown in Figure 1, in the present embodiment,
Each connection gasket 410 has a connection gasket center 412, this connection gasket center 412 may be defined as each connection gasket 410 in top view
Geometric center position, such as：When connection gasket is rectangle, a few conjunction centers are cornerwise point of intersection；When connection gasket is round,
A few conjunction centers are the center point.Also, each connection is separated with one between two connection gasket centers, 412 meeting of two connection gaskets 410 in 415
Distance Dis, this distance Dis can be between 10 microns and 900 microns.
Referring to figure 3., Fig. 3 show the partial top view of the light emitting device 30 of Fig. 1.For ease of description, Fig. 3 is only shown
Wherein one group of connection gasket 410 and the partially reflecting layer 420 of the part Fig. 1, and luminescence unit 500 is omitted, and the connection gasket in Fig. 3
410, reflecting layer 420 is to draw in a perspective fashion with insulating layer 300, is located at connection gasket 410, reflecting layer 420 and insulation with display
Driving circuit 200 and other elements under layer 300.
As shown in Figure 2 and Figure 3, in the present embodiment, driving circuit 200 includes thin film transistor (TFT) TFT.Thin film transistor (TFT)
TFT can couple one of corresponding multiple connection gaskets 410.In the present embodiment, a connection corresponds to a film crystalline substance to 415
Body pipe TFT, the i.e. quantity of thin film transistor (TFT) TFT are identical to connecting to 415 quantity and the quantity of luminescence unit 500, so not with
This is limited, and can also regard demand in other embodiments and the corresponding luminescence unit of multiple thin film transistor (TFT) TFT.Each film is brilliant
Body pipe TFT can couple corresponding connection to 415 one of connection gaskets 410, and be supplied to hair via the connection gasket of coupling 410
500 driving voltage of light unit.
In the present embodiment, driving circuit 200 further includes incoming line 220, output line other than thin film transistor (TFT) TFT
Road 230, control route 240 and connection line 250.Thin film transistor (TFT) TFT includes semiconductor layer 210, grid G, source S and drain electrode
D.In this, for convenience of explanation, one of one group two connection gaskets 410 are defined as the first connection gasket 4101, and wherein
Another be defined as the second connection gasket 4102.Incoming line 220 couples source S, source S coupling semiconductor layer 210.Semiconductor layer
210 coupling drain Ds, drain D coupling connection road 250, and the first connection gasket 4101 is coupled via connection line 250.First connects
Connection pad 4101 couples the cathode of luminescence unit 500, anode the second connection gasket 4102 of coupling of luminescence unit 500, and second connects
Pad 4102 then couples outlet line 230.In other embodiments, the first connection gasket 4101 also can couple luminescence unit 500 just
Pole, and the second connection gasket 4102 can couple the cathode of luminescence unit 500.Further, in the present embodiment, insulating layer 300 wraps
Include the first insulating layer 301, second insulating layer 302 and third insulating layer 303.As shown in Fig. 2, the first insulating layer 301, second insulate
Layer 302 is sequentially laminated with third insulating layer 303.First insulating layer 301 on the substrate 100, and grid G (control route 240)
With semiconductor layer 210 across the first insulating layer 301 (such as gate insulating layer, can be oxide skin(coating)), second insulating layer 302
Covering control grid G (control route 240), and third insulating layer 303 covers source S (incoming line 220) and drain D.In other words
It says, the position of 220 coupling semiconductor layer 210 of incoming line is the source S of thin film transistor (TFT) TFT, and the coupling of connection line 250 is partly led
The position of body layer 210 is the drain D of thin film transistor (TFT) TFT.The grid G coupling control route 240 of thin film transistor (TFT) TFT, grid G
Across the first insulating layer 301 between semiconductor layer 210, control between route 240 and incoming line 220 across second insulating layer
302, and control between route 240 and outlet line 230 also across second insulating layer 302.In this embodiment, outlet line
The lower of 230 corresponding second connection gaskets 410 can further include auxiliary electrode 270, and the setting of auxiliary electrode 270 is in substrate 100 and output
Between route 230, auxiliary electrode 270 and outlet line 230 are electrically connected, to reduce the impedance of circuit.
In some embodiments, control route 240 and incoming line 220 can be respectively coupled to external control module (figure
Do not show), the control module can apply a degree of voltage by controlling route 240, and semiconductor layer 210 is made to form conducting shape
State, at this point, electric power or signal can input to luminescence unit 500 by incoming line 220, make luminescence unit 500 according to electric power or
Signal shines.In some embodiments, control module can be connected by controlling thin film transistor (TFT) corresponding to each light emitting device 30
Or disconnect, multiple luminescence units 500 of light emitting device 30 are carried out individual control, luminescence unit 500 any one or more is made to shine,
Do not shine or adjust brightness.In other words, when this light emitting device 30 is applied to the backlight module of display device, this display device can
By the control module, light emitting device 30 is dimmed according to the different zones on its display surface.For example, working as display surface institute
In the image of display, a certain region is dark scene, then can control one or more in the light emitting device 30 corresponding to this region
A luminescence unit 500 makes this one or more luminescence unit 500 reduce brightness or not shine.
As shown in Figure 2 and Figure 3, in the present embodiment, on the vertical direction Dv of substrate 100, reflecting layer 420 and described thin
Film transistor TFT can be overlapped.For example, the meeting of reflecting layer 420 and semiconductor layer 210, incoming line 220 and control route 240 are in base
It is overlapped on the vertical direction Dv of plate 100.
In the present embodiment, driving circuit 200, insulating layer 300, connection gasket 410 can be by developing, losing with reflecting layer 420
The techniques direct formings such as quarter, deposition and/or sputter on the substrate 100, then luminescence unit 500 are aligned and engages (bonding)
Onto corresponding connection gasket 410, the production of light emitting device 30 so can be completed.In other words, substrate 100, driving circuit 200,
Insulating layer 300, connection gasket 410, reflecting layer 420 and luminescence unit 500 technique can be and combine, and non-predetermined point
All parts group Zhi Zuo not be stood together again after all parts.In the present embodiment, connection gasket 410 can be with reflecting layer 420
Same metal layer is formed via after patterning, for example, i.e., after forming insulating layer 300, forms one layer of metal layer, then lead to
Metal pattern layer 400 is formed after crossing yellow light, development, etch process, the part of metal pattern layer 400 is as connection gasket 410, part
As reflecting layer 420.
The diagrammatic cross-section of the light emitting device 30 of another embodiment of the present invention, Fig. 5 are shown with Fig. 5, Fig. 4 referring to figure 4.
It is shown the partial top view of the light emitting device 30 of Fig. 4, and for ease of description, Fig. 4 and Fig. 5 illustrate only light emitting device 30
Part.As shown in figs. 4 and 5, in the present embodiment, driving circuit 200 also can only include incoming line 220 and outlet line
230, without semiconductor layer 210 and control route 240.If defining each group of two connection gaskets 410 (i.e. connection pair
It one of 415) is the first connection gasket 4101, and wherein another is the second connection gasket 4102, then incoming line 220 can coupling
It is connected to the first connection gasket 4101, the first connection gasket 4101 can couple one end of luminescence unit 500, the other end of luminescence unit 500
The second connection gasket 4102 can be coupled, and the second connection gasket 4102 can then couple outlet line 230.Incoming line 220 may be coupled to
External control module (not shown), the control module can be by 220 input electric power of incoming line or signal to luminescence unit
500, so that luminescence unit 500 is shone according to electric power or signal.In the case, control module can be to multiple hairs of light emitting device 30
Light unit 500 carries out whole control, so that Integral luminous unit 500 is shone, not luminous or adjustment brightness, also, this luminous dress
The structure for setting 30 is simplified, and production cost can be reduced.In some embodiments, if multiple incoming lines 220 be respectively coupled to it is single
A or multiple one group of luminescence units 500, the control module also can be for other 220 input electric power of incoming line or letters
Number, individually to control single one or more one group of luminescence units 500.
As shown in figs. 4 and 5, in the present embodiment, driver circuit 200 further includes that lower layer's incoming line 222 and lower layer are defeated
Route 232 out.Lower layer's incoming line 222 is between incoming line 220 and substrate 100, incoming line 220 and lower layer's input line
Road 222 is stacked on one another and connects.Lower layer's outlet line 232 between outlet line 230 and substrate 100, outlet line 230 with
Lower layer's outlet line 232 is stacked on one another and connects.When incoming line 220 and lower layer's incoming line 222 all to input it is identical come
The electric power or signal in source, line impedance can reduce；Likewise, when outlet line 230 and lower layer's outlet line 232 are all to export
The electric power or signal of identical source, line impedance can also reduce.In other words, lower layer's incoming line 222 and lower layer's outlet line
232 facilitate the transmission of electric power or signal.In some embodiments, incoming line 220 is stacked on one another with lower layer incoming line 222
But it is (for example, can be separated by insulating layer 300 among incoming line 220 and lower layer's incoming line 222) electrically isolated from one another, then defeated
The electric power or signal of separate sources can also be inputted respectively by entering route 220 and lower layer's incoming line 222；Likewise, outlet line 230
It is stacked on one another with lower layer incoming line 232 but electrically isolated from one another, then outlet line 230 can also divide with lower layer outlet line 232
Not Shu Chu separate sources electric power or signal.
In some embodiments, light emitting device 30 can further include multiple conductive patterns 600, as shown in figures 2 or 4.Respectively lead
Electrical pattern 600 is between corresponding connection gasket 410 and driving circuit 200, and each conductive pattern 600 can couple correspondence
Connection gasket 410 and driving circuit 200.In some embodiments, multiple conductive patterns 600 are by indium tin oxide (Indium
Tin oxide, ITO) it is made, and indium tin oxide can be connected between corresponding connection gasket 410 and driving circuit 200,
The adhesive force for connection gasket 410 can be increased, facilitate the connection relationship being bonded between pad 410 and driving circuit 200.
In some embodiments, reflecting layer 420 can have periodically or regular relative to each luminescence unit 500.
As shown in Figure 1, in the present embodiment, reflecting layer 420 is relative to (or each luminescence unit of each group connection gasket 410
500) there can be periodic pattern 426.For example, reflecting layer 420 is centered around with specific periodicity or regularity by taking Fig. 1 as an example
Around each group connection gasket 410 (or each luminescence unit 500), and form the periodic pattern 426 of " mouth " font.Reflecting layer 420
This periodical or regularity periodic pattern 426, light caused by luminescence unit 500 can be made, can be more regularly
It is reflected and is spread, keep the distribution of light more uniform.
Fig. 6 is please referred to, Fig. 6 show the top view of the light emitting device of second embodiment of the invention.Implement with aforementioned first
The difference of example is that the reflecting layer 420 of the present embodiment has multiple separated region 424a for being separated from each other, and reflecting layer 420 be with
Specific periodical or regularity configuration is around each group connection gasket 410 (or each luminescence unit 500).Specifically, anti-
Penetrating layer 420 includes multiple periodic patterns 426, each periodic pattern 426 includes multiple separated region 424a, and each period
Multiple separated region 424a of pattern 426 can with it is specific periodically or regularity configuration is (or corresponding in corresponding connection gasket 410
Luminescence unit 500) surrounding.In the present embodiment, each periodic pattern 426 includes four separated region 424a, and each
Four separated region 424a of a periodic pattern 426 are located at the surrounding of each group connection gasket 410 (or each luminescence unit 500)
And form discrete " mouth " font.In the present embodiment, the separated region 424a of two adjacent periodic patterns 426 can be with that
This links together.
Fig. 7 is please referred to, Fig. 7 show the top view of the light emitting device of third embodiment of the invention.In the present embodiment, instead
Penetrating layer 420 includes multiple periodic patterns 426, each periodic pattern 426 includes two separated region 424b, and each period
It is (or corresponding that two separated region 424b of pattern 426 can be centered around corresponding connection gasket 410 with specific periodicity or regularity
Luminescence unit 500) surrounding.In the present embodiment, two separated region 424b of each periodic pattern 426 are respectively around each
Group connection gasket 410 (or each luminescence unit 500), and form two concentric polygons.So, it is not limited, in other realities
It applies in example, may be, for example, concentric circles.In the present embodiment, two adjacent periodic patterns 426 can be connected to each other.For example, phase
The outside separated region 424b (the outside person of the separated region 424b of i.e. two concentric circles) of two adjacent periodic patterns 426 understands that
This connection.
Fig. 8 is please referred to, Fig. 8 show the top view of the light emitting device of fourth embodiment of the invention.In the present embodiment, instead
Penetrating layer 420 includes multiple periodic patterns 426, each periodic pattern 426 includes eight separated region 424c, and each period
Eight separated region 424c of pattern 426 can with it is specific periodically or regularity configuration is (or corresponding in corresponding connection gasket 410
Luminescence unit 500) surrounding.In the present embodiment, eight separated region 424c of each periodic pattern 426 are arranged respectively at
Around each group connection gasket 410 (or each luminescence unit 500) and formed radial.In the present embodiment, two adjacent week
Part that phase pattern 426 does not overlap each other but it is respectively independent.Also, in the present embodiment, the eight of each periodic pattern 426
A separated region 424c's is equal in magnitude；And in other embodiments, eight separated region 424c of each periodic pattern 426 are big
Small configuration can also have periodical or regularity, for example, the separated region 424c between adjacent periods pattern 426 is smaller,
And the separated region 424c for being located at 426 outside of periodic pattern (side far from other periodic patterns 426) is larger, this configuration is also
Help to enhance the light volume reflection on the outside of light emitting device, keeps light diffusion effect more uniform.
Fig. 9 is please referred to, Fig. 9 show the schematic side view of the backlight module 20 of one embodiment of the invention.A kind of backlight mould
Light emitting device 30, scattering layer 700 and the opposite substrate 710 of block 20 including aforementioned any embodiment, wherein scattering layer 700 is located at pair
To between substrate 710 and light emitting device 30.Scattering layer 700 is set to the insulating layer 300 of light emitting device 30, metal pattern layer 400
On luminescence unit 500, and opposite substrate 710 is oppositely arranged with substrate 100.
In the present embodiment, scattering layer 700 can be high polymer dispersed liquid crystal (Polymer Dispersed Liquid
Crystal, PDLC) 702.In some embodiments, scattering layer 700 also can be macromolecule network liquid crystal (Polymer Network
Liquid Crystal, PNLC).In the present embodiment, backlight module 20 further includes sealing element 720.Sealing element 720, which is located at, to shine
The periphery of device 30 and opposite substrate 710, and couple light emitting device 30 and opposite substrate 710.Also, sealing element 720 can will be high
Molecular dispersions crystalline substance 702 is limited between light emitting device 30 and opposite substrate 710.500 institute of luminescence unit on light emitting device 30
The light of injection can be reflected and be scattered by the high polymer dispersed liquid crystal 702 in scattering layer 700, and can be further by reflecting layer
420 periodic pattern 426 reflects, in this way, which light can be between scattering layer 700 and light emitting device 30 by constantly reflecting
With reflection and spread apart come, final light by opposite substrate 710 light-emitting surface (one side i.e. far from light emitting device 30) project when,
It will form the area source with excellent homogeneity.
As shown in figure 9, in the present embodiment, driving circuit 200 may also include route around route 260 around and lower layer
262, and light emitting device 30 can further include perimeter conductive pattern 610.Route 262 is located at substrate around surrounding route 260 and lower layer
It on 100 and is stacked on one another, perimeter conductive pattern 610 connects surrounding route 260 by insulating layer 300.In some embodiments, all
Route 262 for example can be connected to thin film transistor (TFT) TFT, incoming line 220 or output circuit 230 around contour road 260 and lower layer,
But not limited to this.Also, due on perimeter conductive pattern 610 and not set luminescence unit 500, scattering layer 700 need not cover
It covers on perimeter conductive pattern 610.
In conclusion the light emitting device 30 of embodiment according to the present invention and the backlight module 20 using it, can pass through
The periodic pattern 426 in reflecting layer 420, the light for allowing each luminescence unit part 500 to be issued can be further by periodic pattern 426
Reflection, and the scattering layer 700 in backlight module 20 also facilitates the refraction and scattering of light, and light can more uniformly be expanded
It dissipates, to generate uniform area source.In addition to this, the driving circuit 200 of light emitting device 30, reflecting layer 420 and connection gasket 410
(and conductive pattern layer 600) can be formed by the technique of integration on the substrate 100, to reduce volume, the thickness of backlight module 20
With weight, while production cost can be also reduced.
Although technology contents of the invention are disclosed as above with preferred embodiment, however, it is not to limit the invention,
Anyone skilled in the art make a little variation and retouching not departing from design of the invention, should all be covered by the present invention
In the range of, therefore protection scope of the present invention is subject to view as defined in claim.
Claims (11)
1. a kind of light emitting device, including：
One substrate；
One drive circuit is set on the substrate；
One insulating layer is set on the substrate and covers the driving circuit；
One metal pattern layer is set on the insulating layer, which includes：
Multiple connection gaskets are separated from each other and distinguish the electric property coupling driving circuit；And
One reflecting layer separates with multiple connection gasket and is located at the periphery of multiple connection gasket；And
One luminescence unit is set on multiple connection gasket.
2. light emitting device as described in claim 1, wherein the reflecting layer is at least one opening, and multiple connection gasket is located at
In the opening.
3. light emitting device as described in claim 1, wherein the reflecting layer has the multiple separated regions being separated from each other, multiple
Separated region is located at the surrounding of multiple connection gasket.
4. light emitting device as described in claim 1, further includes：Multiple conductive patterns, respectively the conductive pattern is located at corresponding be somebody's turn to do
Between connection gasket and the driving circuit and couple the connection gasket and the driving circuit.
5. light emitting device as claimed in claim 4, wherein multiple conductive pattern is as made by indium tin oxide.
6. light emitting device as described in claim 1, wherein the driving circuit includes a thin film transistor (TFT), the thin film transistor (TFT) coupling
Connect one of corresponding multiple connection gasket.
7. light emitting device as claimed in claim 6, wherein in the vertical direction of the substrate, the reflecting layer and the film crystal
Pipe overlapping.
8. light emitting device as described in claim 1, wherein the metal pattern layer is as made by aluminium, copper or silver.
9. light emitting device as described in claim 1, two be provided in multiple connection gasket of the luminescence unit are adjacent
The distance between connection gasket center is between 10 microns and 900 microns.
10. a kind of backlight module, including：
Light emitting device as described in one of claims 1 to 9；
One scattering layer is set on the insulating layer, the metal pattern layer and the luminescence unit；And
One opposite substrate is oppositely arranged with the substrate, and wherein the scattering layer is set between the light emitting device and the opposite substrate.
11. backlight module as claimed in claim 10, wherein the scattering layer is high polymer dispersed liquid crystal.
Applications Claiming Priority (2)
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|---|---|---|---|
| TW107109912 | 2018-03-22 | ||
| TW107109912A TWI662335B (en) | 2018-03-22 | 2018-03-22 | Lighting device and backlight module using the same |
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| CN108919572A true CN108919572A (en) | 2018-11-30 |
| CN108919572B CN108919572B (en) | 2021-07-20 |
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| WO2022233075A1 (en) * | 2021-05-07 | 2022-11-10 | 惠州华星光电显示有限公司 | Thin-film transistor device, backlight module, and display panel |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN108919572B (en) | 2021-07-20 |
| TWI662335B (en) | 2019-06-11 |
| TW201940942A (en) | 2019-10-16 |
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