CN108899430A - A kind of light emitting diode with quantum dots and preparation method thereof, display panel - Google Patents
A kind of light emitting diode with quantum dots and preparation method thereof, display panel Download PDFInfo
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- CN108899430A CN108899430A CN201810721343.5A CN201810721343A CN108899430A CN 108899430 A CN108899430 A CN 108899430A CN 201810721343 A CN201810721343 A CN 201810721343A CN 108899430 A CN108899430 A CN 108899430A
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- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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Abstract
The invention discloses a kind of light emitting diode with quantum dots and preparation method thereof, display panel.The light emitting diode with quantum dots, anode, hole transmission layer, quantum dot light emitting layer, electron transfer layer and cathode including being sequentially overlapped setting, the material of the quantum dot light emitting layer includes quantum dot and thermoelectric material.The light emitting diode with quantum dots, the thermoelectric material being arranged in quantum dot light emitting layer, so that the electron concentration around quantum dot improves, while the mobility of electronics is improved, to there are more electronics and hole-recombination to form exciton, so that exciton quantity greatly improves, to improve the luminous efficiency of QLED, in addition, the setting of thermoelectric material further improves the thermal stability of quantum dot, the performance of QLED is improved, the service life of QLED is extended.The display panel that the embodiment of the present invention proposes including the QLED that the embodiment of the present invention proposes, therefore has higher luminous efficiency, and superior performance, the service life is longer.
Description
Technical field
The present invention relates to field of display technology, and in particular to a kind of light emitting diode with quantum dots and preparation method thereof, display
Panel.
Background technique
Quantum dot (Quantum Dot, QD) is a kind of semiconductor nanocrystal materials of the partial size less than 10nm, mainly by
IIB-VIA, IIIA-VA or IVA-VIA race element composition.Typical quantum dot has the monomers such as ZnS, CdSe, PbSe or composite junction
Structure.When quantum dot is by light or electric stimulation, the light of different wave length can be launched, therefore, quantum can be passed through
The size and ingredient of point realize the spectral emissions of different wave length.Quantum dot have emission spectrum is narrow, absorption spectrum is wide, band gap can
The features such as tune, quantum efficiency are high, stability is good, gets more and more people's extensive concerning.
Light emitting diode with quantum dots (Quantum-dot Light Emitting Diodes, QLED) technology, which is used as, most to be had
One of display technology of prospect, QLED structure and Organic Light Emitting Diode (Organic Light Emitting Diodes,
OLED) structure is closely similar, has many advantages, such as that coloration is high, at low cost, energy saving, is widely applied in large scale display field.
However, the QLED in the prior art technical problem that there are luminous efficiencies is low, service life is short, to seriously affect
The performance of QLED display device.
Summary of the invention
The purpose of the embodiment of the present invention is that a kind of light emitting diode with quantum dots and preparation method thereof, display panel are provided, with
The luminous efficiency for improving QLED, extends the service life of QLED.
In order to solve the above-mentioned technical problem, the embodiment of the invention provides a kind of light emitting diode with quantum dots, including successively
Anode, hole transmission layer, quantum dot light emitting layer, electron transfer layer and the cathode being superposed, the material of the quantum dot light emitting layer
Material includes quantum dot and thermoelectric material.
Optionally, the thermoelectric material includes at least one of bismuth telluride, bismuth selenide, antimony telluride.
Optionally, the thermoelectric material is one-dimensional nano structure.
Optionally, the one-dimensional nano structure includes at least one of nano wire, nanometer rods and nanotube.
Optionally, the quantum dot is core-shell structure, and the material of the core of the quantum dot includes CdSe, the quantum dot
The material of shell includes ZnCdS.
Optionally, the material of the electron transfer layer includes at least one of nano zine oxide, nano-titanium oxide.
It optionally, is Ohmic contact between the electron transfer layer and the cathode.
In order to solve the above-mentioned technical problem, the embodiment of the invention also provides a kind of preparation sides of light emitting diode with quantum dots
Method, including：
Form anode；
Hole transmission layer is formed on the anode；
Form quantum dot light emitting layer on the hole transport layer, the material of the quantum dot light emitting layer include quantum dot and
Thermoelectric material；
Electron transfer layer is formed on the quantum dot light emitting layer；
Cathode is formed on the electron transport layer.
Optionally, the quantum dot light emitting layer that formed on the hole transport layer includes：
The thermoelectric material of synthesizing one-dimensional nanostructure；
The thermoelectric material of one-dimensional nano structure is mixed with corresponding quanta point material, under the action of additive, is formed
The plural gel of quantum dot light emitting material；
The plural gel of quantum dot light emitting material is coated on hole transmission layer, forms quantum dot hair by patterning processes
Photosphere.
In order to solve the above-mentioned technical problem, the embodiment of the invention also provides a kind of display panel, including it is above-described
Light emitting diode with quantum dots.
The light emitting diode with quantum dots that the present embodiment proposes, the material of quantum dot light emitting layer includes quantum dot and thermoelectricity material
Material, the setting of thermoelectric material is so that the electron concentration around quantum dot improves, while improving the mobility of electronics, to have more
More electronics and hole-recombination form exciton, so that exciton quantity greatly improves, to improve the luminous efficiency of QLED, separately
Outside, the setting of thermoelectric material further improves the thermal stability of quantum dot, improves the performance of QLED, and extend QLED uses the longevity
Life.The display panel that the embodiment of the present invention proposes has higher hair due to including the QLED of proposition of the embodiment of the present invention
Light efficiency, superior performance, the service life is longer.
Other features and advantages of the present invention will be illustrated in the following description, also, partly becomes from specification
It obtains it is clear that understand through the implementation of the invention.The objectives and other advantages of the invention can be by specification, right
Specifically noted structure is achieved and obtained in claim and attached drawing.
Detailed description of the invention
Attached drawing is used to provide to further understand technical solution of the present invention, and constitutes part of specification, with this
The embodiment of application technical solution for explaining the present invention together, does not constitute the limitation to technical solution of the present invention.
Fig. 1 is the structural schematic diagram of first embodiment of the invention light emitting diode with quantum dots；
Fig. 2 is the material structure schematic diagram of first embodiment of the invention quantum dot light emitting layer；
Fig. 3 shows the overlooking structure diagram of cathode and anode in Fig. 1；
Fig. 4 is the schematic diagram of the preparation method of the light emitting diode with quantum dots of second embodiment of the invention；
Fig. 5 a is that second embodiment of the invention forms the structural schematic diagram after anode；
Fig. 5 b is that second embodiment of the invention forms the structural schematic diagram after hole transmission layer；
Fig. 5 c is that second embodiment of the invention forms the structural schematic diagram after quantum dot light emitting layer；
Fig. 5 d is that second embodiment of the invention forms the structural schematic diagram after electron transfer layer.
Description of symbols：
10- substrate；20- anode；30- hole injection layer；
40- hole transmission layer；50- quantum dot light emitting layer；The first luminous pattern of 51-；
The second luminous pattern of 52-；53 1 third luminous patterns；60 1 electron transfer layers；
70- cathode；80- cover board.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with attached drawing to the present invention
Embodiment be described in detail.It should be noted that in the absence of conflict, in the embodiment and embodiment in the application
Feature can mutual any combination.
Technology contents of the invention will be discussed in detail by specific embodiment below.
First embodiment：
Fig. 1 is the structural schematic diagram of first embodiment of the invention light emitting diode with quantum dots.Fig. 2 is that the present invention first is implemented
The material structure schematic diagram of example quantum dot light emitting layer.As can be seen that the QLED of the present embodiment includes successively folding from Fig. 1 and Fig. 2
Add the substrate 10 set, anode 20, hole injection layer 30, hole transmission layer 40, quantum dot light emitting layer 50, electron transfer layer 60,
Cathode 70 and cover board 80.Wherein, the material of quantum dot light emitting layer 50 includes quantum dot and thermoelectric material.It is easily understood that root
According to needs, electron injecting layer can also be set between electron transfer layer 60 and cathode 70.
At work, hole and electronics are injected into hole injection layer and electron injecting layer from anode and cathode respectively to QLED,
Hole and electronics pass through corresponding hole transmission layer respectively and electron transfer layer arrives at the interface of quantum dot light emitting layer, then, empty
Cave and electronics are compounded to form exciton and give out light.In transmission process, the rate of decay in hole is higher than the rate of decay of electronics
10 times or so, this results in the exciton quantity being compounded to form by electrons and holes to fall sharply.The quantum dot light emitting that the present embodiment proposes
Diode, the material of quantum dot light emitting layer includes quantum dot and thermoelectric material, from figure 2 it can be seen that the setting of thermoelectric material
So that the electron concentration around quantum dot improves, while the mobility of electronics is improved, therefore, the rate of decay in hole is certain
In the case where, the raising of electron concentration and the raising of electron mobility allow have more electronics before the decaying of hole with it is empty
Cave is compounded to form exciton, so that exciton quantity greatly improves, so that the luminous efficiency of QLED is improved, in addition, thermoelectric material
It is arranged and further improves the thermal stability of quantum dot, improve the performance of QLED, extends the service life of QLED.
Thermoelectric material has the various structures such as one-dimentional structure, two-dimensional structure, in order to further increase the luminous efficiency of QLED,
In the present embodiment, thermoelectric material is the thermoelectric material of one-dimensional nano structure, and the thermoelectric material of one-dimensional nano structure can be electricity
The transmission of son provides direct channel, significantly promotes the mobility of electronics, reduces the quenching of electronics, further increase the hair of QLED
Light efficiency.
One-dimensional nano structure includes in the nanotube of the nano wire of one-dimentional structure, the nanometer rods of one-dimentional structure and one-dimentional structure
At least one, wherein the diameter of nanotube be 20nm~30nm.Such one-dimensional nano structure has fabulous thermoelectricity capability
And electronic transmission performance, it can be further improved the luminous efficiency of QLED.
Thermoelectric material includes bismuth telluride (Bi2Te3), bismuth selenide (Bi2Se3), antimony telluride (Sb2Te3At least one of).When
When thermoelectric material is bismuth telluride, the material of quantum dot light emitting layer 50 includes the composite junction of quantum dot and one-dimensional bismuth telluride nano material
Structure.
Thermoelectric material is a kind of using material internal carrier moving, realizes the function that thermal energy and electric energy directly mutually convert
Material.In numerous thermoelectric materials, Bi2Te3It is a kind of thermoelectric material that can be obtained figure of merit (ZT) at normal temperature and be higher than " 1 ".
Based on Seebeck (Seebeck) effect and bohr note (Peltier) effect, Bi2Te3Thermo-electric generation and semiconductor system may be implemented
It is cold.The Bi of one-dimentional structure2Te3Thermoelectric material obtains fabulous heat because it has the advantages that density of electronic states is high, lattice thermal conductivity is low etc.
Electrical property.In addition, one-dimensional Bi2Te3Nano material can also provide direct channel for the transmission of electronics, to promote carrier
Electronic transport performance.
It is easily understood that quantum dot is usually core-shell structure, in the present embodiment, the material of the core of quantum dot includes
CdSe (cadmium selenide), the material of the shell of quantum dot include ZnCdS, are middle layer, the material of middle layer between core and shell
Including CdS (cadmium sulfide).From figure 1 it appears that quantum dot light emitting layer includes the first luminous pattern 51, the second luminous pattern 52
With third luminous pattern 53.First luminous pattern 51, the second luminous pattern 52 and third luminous pattern 53 respectively correspond the first hair
Luminescent material, the second luminescent material and third luminescent material.In the present embodiment, the first luminous pattern 51 emits feux rouges, in order to make
First luminous pattern 51 emits feux rouges, and the core of the first quantum dot in the first luminescent material is rich in cadmium element, and shell is rich in Zn-ef ficiency,
And first quantum dot outer diameter be 6nm~8nm；Second luminous pattern 52 emits blue light, in order to emit the second luminous pattern 52
The shell of blue light, the second quantum dot in the second luminescent material is rich in Zn-ef ficiency and element sulphur, and the outer diameter of the second quantum dot simultaneously
About 10nm；Third luminous pattern 53 emits green light, in order to make third luminous pattern 53 emit green light, in third luminescent material the
The core of three quantum dots is rich in selenium element, and shell is rich in element sulphur, and the outer diameter of third quantum dot is 6nm~8nm.
In order to avoid substrate 10 and cover board 80 impact the transmitting light of light emitting diode with quantum dots, substrate 10 and lid
The material of plate 80 is usually transparent material, such as glass, quartz, polyethylene terephthalate (PET).
Anode 20 is transparent membrane electrode, with a thickness of 30~50nm, in the present embodiment, anode 20 with a thickness of 40nm,
The material of anode 20 may include tin indium oxide.
Hole injection layer 30 is the transparent conductive film of high conductivity, in the present embodiment, the material of hole injection layer 30
It can be the polymer material of poly- 3,4-ethylene dioxythiophene (Poly (3,4-ethylenedioxythiophene), PEDOT),
And poly- (p styrene sulfonic acid) root anion (Poly (4-styrenesulfonate), PSS) is adulterated, that is, hole injection layer 30
Material be (PEDOT：PSS).
The material of hole transmission layer 40 includes poly- ((9,9- dioctyl fluorene -2,7- diyl)-total (4,4 '-(N- (4- sec- fourths
Base phenyl) diphenylamines)) polymer material of (TFB).
Electron transfer layer 60 is nano-particle material, and diameter is 30nm~50nm, such as nano zine oxide (ZnO), nanometer
Titanium oxide (TiO2) etc..
Cathode 70 is metallic film, with a thickness of 250nm~350nm, in the present embodiment, cathode 70 with a thickness of 300nm,
The material of cathode 70 may include aluminium.
In the present embodiment, it is Ohmic contact between electron transfer layer 60 and cathode 70, thus greatly reduces electronics biography
Potential energy difference between defeated layer and cathode further improves the transmission rate of electronics.
Fig. 3 shows the overlooking structure diagram of cathode and anode in Fig. 1.From figure 3, it can be seen that in the present embodiment
In, anode 20 is along the spaced strip shaped electric poles of first direction, and cathode 70 is spaced strip shaped electric poles in a second direction,
Second direction is mutually perpendicular to first direction.The anode and cathode of this structure reduces sun while meeting functional requirement
The overlapping area of pole electrode and cathode electrode reduces the influence of anode electrode and cathode electrode to QLED light transmittance, to mention
The high brightness of QLED.Certainly, the structure of the anode and cathode in Fig. 3 is not the specific restriction to anode and cathode pattern,
In specific implementation, the electrode structure of anode and cathode can be set according to actual needs.
Second embodiment：
Fig. 4 is the schematic diagram of the preparation method of the light emitting diode with quantum dots of second embodiment of the invention.Quantum dot light emitting
The preparation method of diode includes：
S11：Form anode；
S12：Hole transmission layer is formed on anode；
S13：Quantum dot light emitting layer is formed on the hole transport layer, and the material of quantum dot light emitting layer includes quantum dot and thermoelectricity
Material；
S14：Electron transfer layer is formed on quantum dot light emitting layer；
S15：Cathode is formed on the electron transport layer.
Hole transmission layer is formed on anode includes：Hole injection layer is formed on anode, is formed on hole injection layer
Hole transmission layer.
The technical solution of the embodiment of the present invention will be discussed in detail by the preparation process of light emitting diode with quantum dots below.Its
In, described " patterning processes " include coating photoresist, mask exposure, development, etching, stripping photoresist etc. in embodiment
Reason, is the preparation process of existing maturation.The already known processes such as sputtering, vapor deposition, chemical vapor deposition can be used in deposition, and coating can be used
Known coating processes, etching can be used known method, do not do specific restriction herein.
Anode is formed, is specifically included：Deposition anode film on the substrate 10 coats a layer photoresist on anode film；
Photoresist is exposed and is developed using monotone mask plate, unexposed area is formed in anode pattern position, retains photoetching
Glue forms complete exposure area in other positions, and unglazed photoresist exposes anode film；It is thin to the anode of complete exposure area
Film performs etching and removes remaining photoresist, forms the pattern of anode 20, as shown in Figure 5 a.Wherein, the material of substrate is
Bright material, such as glass, quartz, polyethylene terephthalate (PET).Anode is transparent membrane electrode, with a thickness of 30~
50nm, material can be tin indium oxide.
Hole injection layer is formed on anode, forms hole transmission layer on hole injection layer, is specifically included：It is being formed with
Hole injection layer film and hole transport layer film are successively uniformly coated in the substrate of anode 20, then in 110 DEG C~130 DEG C temperature
Annealing process processing is carried out to hole injection layer film and hole transport layer film under degree, the processing time is 25min~35min,
Hole injection layer 30 and hole transmission layer 40 are formed, as shown in Figure 5 b.Wherein, the material of hole injection layer 30 can be
(PEDOT：PSS), the material of hole transmission layer 40 can be poly- ((9,9- dioctyl fluorene -2,7- diyl)-total (4,4 '-(N- (4-
Sec-butyl phenyl) diphenylamines)) polymer material of (TFB).In the present embodiment, the temperature of annealing process is 120 DEG C, the time
For 30min.
Quantum dot light emitting layer is formed on the hole transport layer, and the material of quantum dot light emitting layer includes quantum dot and thermoelectricity material
Material, wherein quantum dot light emitting layer includes the first luminous pattern 51, the second luminous pattern 52 and third luminous pattern 53, the step
Including：
The first luminescent material thin-film is coated in the substrate for forming hole transmission layer 40, is applied on the first luminescent material thin-film
Cover a layer photoresist；Photoresist is exposed and is developed using monotone mask plate, is formed not in the first luminous pattern position
Exposure area retains photoresist, forms complete exposure area in other positions, it is thin to expose the first luminescent material for unglazed photoresist
Film；Remaining photoresist is performed etching and removed to the first luminescent material thin-film of complete exposure area, forms the first illuminated diagram
Case 51；
The second luminescent material thin-film is coated in the substrate for forming the first luminous pattern 51, on the second luminescent material thin-film
Coat a layer photoresist；Photoresist is exposed and is developed using monotone mask plate, in 51 position of the first luminous pattern and
Second luminous pattern position is respectively formed unexposed area, retains photoresist, forms complete exposure area in other positions, non-lithography
Glue exposes the second luminescent material thin-film；Second luminescent material thin-film of complete exposure area is performed etching and removes residue
Photoresist, form the second luminous pattern 52, while exposing the first luminous pattern 51；
Third luminescent material thin-film is coated in the substrate for forming the first luminous pattern 51 and the second luminous pattern 52, the
A layer photoresist is coated on three luminescent material thin-films；Photoresist is exposed and is developed using monotone mask plate, first
51 position of luminous pattern, 52 position of the second luminous pattern and third luminous pattern position are respectively formed unexposed area, retain photoetching
Glue forms complete exposure area in other positions, and unglazed photoresist exposes third luminescent material thin-film；To complete exposure area
Third luminescent material thin-film perform etching and remove remaining photoresist, form third luminous pattern 53, while exposing the
One luminous pattern 51 and the second luminous pattern 52；
100 DEG C~120 DEG C at a temperature of, to the first luminous pattern, the second luminous pattern and third luminous pattern bake
25min~35min forms quantum dot light emitting layer, as shown in Figure 5 c.In the present embodiment, stoving temperature is 110 DEG C, when baking
Between be 30min.
Above using the sequence shape for sequentially forming the first luminous pattern 51, the second luminous pattern 52 and third luminous pattern 53
At quantum dot light emitting layer 50, so it is easy to understand that in specific implementation, in order to form quantum dot light emitting layer, can according to need
The formation order of the first luminous pattern 51 of any setting, the second luminous pattern 52 and third luminous pattern 53.
It will be understood by those skilled in the art that needing to prepare the material of quantum dot light emitting layer first when forming quantum dot light emitting layer
Material, the method for preparing quantum dot emitting layer material are as follows：
It is Bi with thermoelectric material using the thermoelectric material of hot solvent method synthesizing one-dimensional nanostructure2Te3It illustrates：Using
Hot solvent method synthesizing one-dimensional tellurium (Te) nano wire is mutually expanded according to Ke Kendaer (Kirkendall) effect using Te-Bi atom
Scattered effect forms one-dimensional Bi2Te3Nano material.
The thermoelectric material of one-dimensional nano structure is mixed according to a certain percentage with corresponding quanta point material, is formed one-dimensional
The thermoelectric material of nanostructure and the mixture of quanta point material, are added additive into the mixture, in the effect of additive
Under, sol form mixture is made, forms the plural gel of quantum dot luminescent material after standing a period of time.Additive can be second
One or more of base cellulose, terpinol, ethyl alcohol.
The plural gel of the plural gel of the first luminescent material, the second luminescent material can be prepared respectively using the above method
With the plural gel of third luminescent material, during preparing luminescent material, the first luminescent material it is corresponding using the first quantum dot,
Second luminescent material is corresponding corresponding using third quantum dot using the second quantum dot, third luminescent material.
Electron transfer layer 60 is formed on quantum dot light emitting layer 50, it can be using deposition technique on quantum dot light emitting layer 50
Electron-transport film is deposited to form electron transfer layer 60, screen printing technique shape on quantum dot light emitting layer 50 can also be used
At electron transfer layer 60, as fig 5d.Wherein, electron transfer layer 60 is nano-particle material, and diameter is 30nm~50nm, example
Such as nano zine oxide (ZnO), nano-titanium oxide (TiO2) etc..
Cathode is formed on the electron transport layer, including：Cathode thin film is deposited in the substrate for forming electron transfer layer 60,
A layer photoresist is coated on cathode thin film；Photoresist is exposed and is developed using monotone mask plate, in cathode pattern position
It sets to form unexposed area, retains photoresist, form complete exposure area in other positions, it is thin to expose cathode for unglazed photoresist
Film；Remaining photoresist is performed etching and removed to the cathode thin film of complete exposure area, the pattern of cathode 70 is formed, by cover board
80 lids close on cathode 70, as shown in Figure 1.Wherein, cathode 70 is metallic film, with a thickness of 250nm~350nm, in this implementation
Example in, cathode 70 with a thickness of 300nm, the material of cathode 70 may include aluminium.
In order to enable cathode 70 and 60 Ohmic contact of electron transfer layer, form before cathode on the electron transport layer, also need
Ohm processing is carried out to the part of electron transfer layer and cathode contacts, to guarantee Europe between cathode 70 and electron transfer layer 60
Nurse contact.
When preparation includes the display panel of QLED, in order to improve the waterproofness of QLED, QLED display panel can also be wrapped
Include the epoxy resin envelope frame for encapsulating QLED.
3rd embodiment：
Third embodiment of the invention proposes a kind of display panel, which includes the quantum dot in above-described embodiment
Light emitting diode.Display panel can be：Mobile phone, television set, display, laptop, Digital Frame, is led at tablet computer
Any products or components having a display function such as boat instrument.
The display panel of the present embodiment, in order to improve the waterproofness of QLED, which further includes for encapsulating QLED
Envelope frame, the material for sealing frame may include epoxy resin etc..
Although disclosed herein embodiment it is as above, the content only for ease of understanding the present invention and use
Embodiment is not intended to limit the invention.Technical staff in any fields of the present invention is taken off not departing from the present invention
Under the premise of the spirit and scope of dew, any modification and variation, but the present invention can be carried out in the form and details of implementation
Scope of patent protection, still should be subject to the scope of the claims as defined in the appended claims.
Claims (10)
1. a kind of light emitting diode with quantum dots, which is characterized in that anode, hole transmission layer, quantum including being sequentially overlapped setting
Point luminescent layer, electron transfer layer and cathode, the material of the quantum dot light emitting layer include quantum dot and thermoelectric material.
2. light emitting diode with quantum dots according to claim 1, which is characterized in that the thermoelectric material include bismuth telluride,
At least one of bismuth selenide, antimony telluride.
3. light emitting diode with quantum dots according to claim 1, which is characterized in that the thermoelectric material is 1-dimention nano knot
Structure.
4. light emitting diode with quantum dots according to claim 3, which is characterized in that the one-dimensional nano structure includes nanometer
At least one of line, nanometer rods and nanotube.
5. light emitting diode with quantum dots according to claim 1, which is characterized in that the quantum dot is core-shell structure, institute
The material for stating the core of quantum dot includes CdSe, and the material of the shell of the quantum dot includes ZnCdS.
6. light emitting diode with quantum dots according to claim 1, which is characterized in that the material of the electron transfer layer includes
At least one of nano zine oxide, nano-titanium oxide.
7. light emitting diode with quantum dots according to claim 1, which is characterized in that the electron transfer layer and the cathode
Between be Ohmic contact.
8. a kind of preparation method of light emitting diode with quantum dots, which is characterized in that including：
Form anode；
Hole transmission layer is formed on the anode；
Quantum dot light emitting layer is formed on the hole transport layer, and the material of the quantum dot light emitting layer includes quantum dot and thermoelectricity
Material；
Electron transfer layer is formed on the quantum dot light emitting layer；
Cathode is formed on the electron transport layer.
9. preparation method according to claim 8, which is characterized in that described to form quantum dot on the hole transport layer
Luminescent layer includes：
The thermoelectric material of synthesizing one-dimensional nanostructure；
The thermoelectric material of one-dimensional nano structure is mixed with corresponding quanta point material, under the action of additive, forms quantum
The plural gel of point luminescent material；
The plural gel of quantum dot light emitting material is coated on hole transmission layer, forms quantum dot light emitting by patterning processes
Layer.
10. a kind of display panel, which is characterized in that including two pole of quantum dot light emitting described in any one of claim 1~7
Pipe.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261793A (en) * | 2020-01-20 | 2020-06-09 | Tcl华星光电技术有限公司 | Display panel, preparation method thereof and display device |
| CN113130837A (en) * | 2019-12-31 | 2021-07-16 | Tcl集团股份有限公司 | Quantum dot light-emitting diode and preparation method thereof |
| WO2023284728A1 (en) * | 2021-07-15 | 2023-01-19 | 浙江大学 | Light-emitting apparatus, and use method for quantum dot led |
| US11730008B2 (en) | 2021-02-16 | 2023-08-15 | Sharp Kabushiki Kaisha | Light emitting layer including quantum dots with improved charge carrier mobility |
| CN118102767A (en) * | 2024-04-23 | 2024-05-28 | 浙江大学 | LED semiconductor device for optical communication and preparation method thereof |
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