CN105206761A - Light emitting diode and preparation method thereof - Google Patents
Light emitting diode and preparation method thereof Download PDFInfo
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- CN105206761A CN105206761A CN201510622188.8A CN201510622188A CN105206761A CN 105206761 A CN105206761 A CN 105206761A CN 201510622188 A CN201510622188 A CN 201510622188A CN 105206761 A CN105206761 A CN 105206761A
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
- H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The embodiment of the invention provides a light-emitting diode, which comprises a substrate, and a first electrode, a light-emitting functional layer and a second electrode which are sequentially stacked on the surface of the substrate, wherein the light-emitting functional layer at least comprises a light-emitting layer, the second electrode is made of gallium alloy, the melting point of the gallium alloy is lower than 30 ℃, the gallium alloy is in a liquid state at room temperature, and the surface of the gallium alloy is provided with a natural oxide layer. The LED adopts the gallium alloy metal electrode, and the gallium alloy has fluidity, deformability and plasticity at room temperature, so that the LED can be formed by printing, printing and coating methods, the whole LED is prepared without vacuum evaporation equipment, and a real full-printed photoelectric device is realized. In addition, the light-emitting diode adopts the gallium alloy metal electrode, so that the stability is good and the efficiency is high. The embodiment of the invention also provides a preparation method of the light-emitting diode.
Description
Technical field
The present invention relates to quantum dot or field of organic electroluminescence, particularly relate to a kind of light-emitting diode and preparation method thereof.
Background technology
Based on Organic Light Emitting Diode (OLED), light emitting diode with quantum dots (QDLED) printed form display because of have with low cost, color is true to nature, can the particular advantages such as flexibility, be expected to become main flow Display Technique of future generation.Printing technology is considered to solve OLED/QDLED high cost and realize large-area effective way, there is vast potential for future development, this technology can make OLED/QDLED display screen in conjunction with liquid functional material and advanced printing equipment, utilance and the production efficiency of material can be improved, reduce manufacturing cost, improve production capacity.
Typical OLED/QDLED device generally comprises hole transmission layer, luminescent layer, electron transfer layer and reflective rear electrode.When preparing OLED/QDLED device, each functional material is all dissolved in suitable organic solvent, is made into " ink ", and the method via spin coating, inkjet printing or silk screen printing makes film.Major part carrier transmission material, polymer luminescent material, organic and quantum dot light emitting material all can be made into " ink ", and by printing/and the method for printing makes film.But the back electrode of device, is usually adopted metal material as Mg:Ag, Al, Ag, Au, Cu etc., still must be obtained by the method for vacuum evaporation, incompatible with the technique of print/printing; And the introducing of vacuum equipment, reduce production efficiency, improve into product cost.And the groundwork of current printing technology in the world and achievement concentrate in printing luminescent material and functional layer, the correlation technique adopting printed cathode to prepare OLED/QDLED does not almost have, and therefore can't be referred to as real all print Display Technique.Can type metal electrode, be one of crucial problem of all print Display Technique, and not yet have perfect solution at present.
Therefore, for realizing real all print display device, solve the crucial problem of all print Display Technique, must develop be applicable to OLED/QDLED can type metal electrode.In recent years, based on the electric conducting material of nano silver wire, Graphene and carbon nano-tube, because the method by spin coating/printing makes conductive film, be considered to one of solution, but nano silver wire/graphene/carbon nano-tube conductive film is transparent, and as the back electrode of device, require that electrode has higher light reflectivity, to make light from a direction outgoing.Therefore nano silver wire/graphene/carbon nano-tube conductive film is also not suitable as the back electrode of device, and they are often used as the hearth electrode of device to replace traditional ITO electrode.Ye You research team is by printing the back electrode of the method fabricate devices of conductive silver glue, but conductive silver glue contains organic solvent, and in the process of film forming, organic solvent can penetrate into device, and then destroys the functional layer below electrode.For alleviating the destruction of organic solvent, the thicker resilient coating of one deck can be inserted between organic function layer and back electrode.The introducing of resilient coating, hinders the injection of charge carrier to a certain extent, and may not necessarily stop the infiltration of organic solvent completely; On the other hand, after having printed conductive silver glue, device must at high temperature have been annealed, and with evaporation of organic solvent, in high-temperature annealing process, the performance of most of organic functional material can suffer damage.Therefore, based on the printable back electrode of conductive silver glue, because it contains organic solvent, and the back electrode of all print device is not suitable as.
Summary of the invention
Given this, embodiment of the present invention first aspect provides a kind of light-emitting diode, and the second electrode of this light-emitting diode and back electrode adopt gallium alloy material, cannot realize problem prepared by all print photoelectric device well in order to solve prior art.
First aspect, embodiments provide a kind of light-emitting diode, comprise substrate, and be cascading at the first electrode of described substrate surface, light emitting functional layer and the second electrode, described light emitting functional layer at least comprises luminescent layer, and the material of described second electrode is gallium alloy, and the fusing point of described gallium alloy is lower than 30 DEG C, be at room temperature liquid, the surface of described second electrode has one deck natural oxide layer.
Light-emitting diode of the present invention, its second electrode adopts gallium alloy material, and this gallium alloy material at room temperature has liquid character, easily deformation occurs, easily obtain the pattern of conformal (conformal), the method therefore by printing, printing or apply is shaping.By printing, printing or the gallium alloy of coating molding, there is not pin hole in surface compact, therefore the present invention adopts the stability of the photoelectric device of gallium alloy metal electrode better, longer service life.
Preferably, described gallium alloy is gallium-indium alloy or is gallium-indium-tin alloy.
Preferably, in described gallium-indium alloy, the mass percentage of gallium is 50-90%, and the mass percentage of indium is 10-50%; In described gallium-indium-tin alloy, the mass percentage of gallium is less than 90% for being more than or equal to 50%, and the mass percentage of indium is 10-30%, and the mass percentage of tin is less than or equal to 20% for being greater than 0.
More preferably, in described gallium-indium alloy, the mass percentage of gallium is 60-75%, and the mass percentage of indium is 25-40%; In described gallium-indium-tin alloy, the mass percentage of gallium is 60-75%, and the mass percentage of indium is 10-25%, and the mass percentage of tin is 5-15%.
Further preferably, in described gallium-indium alloy, the mass percentage of gallium is 75%, and the mass percentage of indium is 25%; In described gallium-indium-tin alloy, the mass percentage of gallium is 68%, and the mass percentage of indium is 22%, and the mass percentage of tin is 10%.
Preferably, the thickness of described natural oxide layer is 1-5nm, and the material of described natural oxide layer is gallium oxide.
The surface tension of natural oxide layer is larger than gallium alloy, and therefore oxide layer can serve as the cutis elastica of gallium alloy, and gallium alloy, under the protection of oxide layer cutis elastica, can keep certain shape and not flow arbitrarily, thus be conducive to shaping.
Preferably, described light emitting functional layer comprises and is cascading at the hole injection layer of described first electrode surface, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer; Or comprise and being cascading at the electron injecting layer of described first electrode surface, electron transfer layer, luminescent layer, hole transmission layer and hole injection layer.Namely in the present invention, light-emitting diode can be forward or inverted structure.According to actual needs, lumination of light emitting diode functional layer of the present invention can also arrange electronic barrier layer, hole blocking layer etc.In the present invention, the layers of materials such as hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer can adopt common used material in industry, and the thickness of its each layer can set according to actual needs.
In the present invention, the material of described substrate and the first electrode can adopt common used material in industry.Such as, described substrate can be the substrates such as glass, quartz, plastics or resin.Described first electrode can be ito thin film, and thickness is 10-500nm.
Light-emitting diode of the present invention comprises light emitting diode with quantum dots or Organic Light Emitting Diode.
The light-emitting diode that embodiment of the present invention first aspect provides, because its second electrode adopts gallium alloy material, and this gallium alloy material at room temperature has mobility, deformation behavior and plasticity, by printing, the method of printing or coating is shaping, and not containing organic solvent, there is conductivity high, light reflectivity is high, work function is suitable, without the need to advantages such as post annealed process, it is ideal printed electrode material, thus make the preparation of whole light-emitting diode without the need to adopting vacuum evaporation equipment, achieve real all print photoelectric device, solve prior art and cannot realize problem prepared by all print photoelectric device well.In addition, the light-emitting diode that the embodiment of the present invention provides is owing to adopting gallium alloy metal electrode, and efficiency is high, good stability, long service life.
Second aspect, embodiments provides a kind of preparation method of above-mentioned light-emitting diode, comprises the following steps:
There is provided a substrate, stack gradually preparation first electrode and light emitting functional layer at described substrate surface, described light emitting functional layer at least comprises luminescent layer;
Get gallium alloy, described gallium alloy is fully oxidized in atmosphere, then by described gallium alloy printing, print or be coated in described light emitting functional layer surface, form the second electrode, obtain light-emitting diode; Or the second substrate is provided, by described fully oxidized after gallium alloy printing, print or be coated in described second substrate surface, form the second electrode, described second electrode and described light emitting functional layer fit together, and adopt ultra-violet curing glue to fix, obtain light-emitting diode;
The fusing point of described gallium alloy is lower than 30 DEG C, and described gallium alloy is at room temperature liquid, and the surface of described second electrode has one deck natural oxide layer.
Preferably, described gallium alloy is gallium-indium alloy or is gallium-indium-tin alloy.
Preferably, in described gallium-indium alloy, the mass percentage of gallium is 50-90%, and the mass percentage of indium is 10-50%; In described gallium-indium-tin alloy, the mass percentage of gallium is less than 90% for being more than or equal to 50%, and the mass percentage of indium is 10-30%, and the mass percentage of tin is less than or equal to 20% for being greater than 0.
More preferably, in described gallium-indium alloy, the mass percentage of gallium is 60-75%, and the mass percentage of indium is 25-40%; In described gallium-indium-tin alloy, the mass percentage of gallium is 60-75%, and the mass percentage of indium is 10-25%, and the mass percentage of tin is 5-15%.
Further preferably, in described gallium-indium alloy, the mass percentage of gallium is 75%, and the mass percentage of indium is 25%; In described gallium-indium-tin alloy, the mass percentage of gallium is 68%, and the mass percentage of indium is 22%, and the mass percentage of tin is 10%.
Preferably, the thickness of described natural oxide layer is 1-5nm, and the material of described natural oxide layer is gallium oxide.
Described gallium alloy is fully oxidized in atmosphere, make described gallium alloy surface form one deck natural oxide layer and realize by stirring.
Preferably, described light emitting functional layer comprises and is cascading at the hole injection layer of described first electrode surface, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer; Or comprise and being cascading at the electron injecting layer of described first electrode surface, electron transfer layer, luminescent layer, hole transmission layer and hole injection layer.Namely in the present invention, light-emitting diode can be forward or inverted structure.According to actual needs, lumination of light emitting diode functional layer of the present invention can also arrange electronic barrier layer, hole blocking layer etc.In the present invention, the layers of materials such as hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer can adopt common used material in industry, and the thickness of its each layer can set according to actual needs.In the present invention, above-mentioned each functional layer can adopt the modes such as hot evaporation, printing, printing or coating to prepare.
In the present invention, the material of described substrate and the first electrode can adopt common used material in industry.Such as, described substrate can be the substrates such as glass, quartz, plastics or resin.Described first electrode can be ito thin film.Described second substrate can be the substrates such as glass, quartz, plastics or resin.The encapsulation cover plate of device is also served as in second substrate simultaneously.Ultra-violet curing glue of the present invention can adopt the conventional solidification glue used in industry, adopts ultraviolet light polymerization.
Light-emitting diode of the present invention comprises light emitting diode with quantum dots or Organic Light Emitting Diode.
The preparation method of the light-emitting diode that embodiment of the present invention second aspect provides, owing to adopting liquid gallium alloy material as electrode material, therefore by printing, obtained second electrode of method of printing or coating, without the need to adopting the vacuum evaporation equipment of expensive expense material, save this link of vacuum evaporation completely, technique is simple, with low cost, and owing to not containing organic solvent, do not need annealing in process, therefore the performance of device is not affected, embodiment of the present invention preparation method achieves the preparation of real all print photoelectric device, solve the crucial problem of all print technology of preparing, have broad application prospects.
The advantage of the embodiment of the present invention will partly be illustrated in the following description, and a part is apparent according to specification, or can be known by the enforcement of the embodiment of the present invention.
Accompanying drawing explanation
Fig. 1 is the structural representation of the light emitting diode with quantum dots in the embodiment of the present invention 1;
Fig. 2 is the preparation flow of the light emitting diode with quantum dots of the invention process 1;
Fig. 3 is the structural representation of the light emitting diode with quantum dots in the embodiment of the present invention 2;
Fig. 4 is the preparation flow of the light emitting diode with quantum dots of the embodiment of the present invention 2;
Fig. 5 is the Current density-voltage-light characteristic figure of the light emitting diode with quantum dots in the embodiment of the present invention 1 and reference examples 1;
Fig. 6 is the current efficiency-current density characteristics figure of the light emitting diode with quantum dots in the embodiment of the present invention 1 and reference examples 1;
Fig. 7 is the Current density-voltage-light characteristic figure of the light emitting diode with quantum dots in the embodiment of the present invention 2 and reference examples 2;
Fig. 8 is the current efficiency-current density characteristics figure of the light emitting diode with quantum dots in the embodiment of the present invention 2 and reference examples 2;
Fig. 9 is the brightness-time response figure of the light emitting diode with quantum dots in the embodiment of the present invention 2 and reference examples 2.
Embodiment
The following stated is the preferred implementation of the embodiment of the present invention; should be understood that; for those skilled in the art; under the prerequisite not departing from embodiment of the present invention principle; can also make some improvements and modifications, these improvements and modifications are also considered as the protection range of the embodiment of the present invention.
Multiple embodiment is divided to be further detailed the embodiment of the present invention below.Wherein, the embodiment of the present invention is not limited to following specific embodiment.Not changing in the scope of principal right, carrying out that can be suitable is changed and implements.
Embodiment 1
The structural representation of the light emitting diode with quantum dots that Fig. 1 provides for the present embodiment.As shown in Figure 1, this light emitting diode with quantum dots has been cascading glass substrate 101, ito thin film 102, hole injection layer 103, hole transmission layer 104, luminescent layer 105, electron transfer layer 106 and the second electrode 107 from lower to upper.The material of described second electrode 107 is gallium-indium alloy, and in described gallium-indium alloy, the mass percentage of gallium is 75%, and the mass percentage of indium is 25%; Described second electrode 107 surface has the natural oxide layer that a layer thickness is 1-5nm.
The preparation method of the light emitting diode with quantum dots that the present embodiment provides, comprises the following steps:
A () gets ito glass substrate, be labeled as substrate 1, and adopt laser ablation or photoetching technique to produce electrode pattern on substrate 1, then use glass cleaning solution ultrasonic cleaning, the process of its ultrasonic cleaning is ultrasonic 30min under the condition of 70 DEG C.Then, with deionized water ultrasonic cleaning 30min, finally ito glass electrode base board is dried stand-by.
B substrate 1 after step (a) process is adopted UV ozone process 15min by (), then make light emitting functional layer on substrate 1, hole injection layer is prepared in spin coating in its surface successively particularly, hole transmission layer, quantum dot light emitting layer, electron transfer layer.Wherein, the material of hole injection layer is poly-(3,4-rthylene dioxythiophene)-polystyrolsulfon acid (PEDOT:PSS), and the rotating speed of spin coating is 3000r/min, baking temperature 150 DEG C, time 10min; The material of hole transmission layer is poly-(9-vinyl carbazole) (PVK), and the concentration of PVK is 10mg/mL, and adopt chlorobenzene as solvent, the rotating speed of spin coating is 1500r/min, baking temperature 120 DEG C, time 20min; The material of quantum dot light emitting layer is CdSe/ZnS nuclear shell structure quantum point, and surface ligand is oleic acid, and concentration is 20mg/mL, and adopt normal octane as solvent, the rotating speed of spin coating is 1500r/min, baking temperature 100 DEG C, time 5-6min; The material of electron transfer layer is ZnO nano particle, and concentration is 20mg/mL, and adopt n-butanol as solvent, the rotating speed of spin coating is 2000r/min, baking temperature 60 DEG C, time 30min.
C () provides another glass substrate, be labeled as substrate 2, get liquid gallium indium alloy, in described gallium-indium alloy, the mass percentage of gallium is 75%, the mass percentage of indium is 25%, described liquid gallium indium alloy is stirred in atmosphere, makes it fully oxidized, form the natural oxide layer that a layer thickness is 1-5nm on surface, again by described liquid gallium indium alloy coating on a substrate 2, gallium-indium alloy second electrode is prepared.
D substrate 1 and substrate 2 fit together by (), namely electron transfer layer and the second electrode are fitted, and use ultra-violet curing glue to fix, and obtain forward light emitting diode with quantum dots.
Embodiment 2
The structural representation of the light emitting diode with quantum dots that Fig. 3 provides for the present embodiment.As shown in Figure 3, this light emitting diode with quantum dots has been cascading glass substrate 201, ito thin film 202, electron transfer layer 203, luminescent layer 204, electronic barrier layer 205, hole transmission layer 206, hole injection layer 207 and the second electrode 208 from lower to upper.The material of described second electrode 208 is gallium-indium-tin alloy, and in described gallium-indium-tin alloy, the mass percentage of gallium is 68%, and the mass percentage of indium is 22%, and the mass percentage of tin is 10%; Described second electrode 208 surface has the natural oxide layer that a layer thickness is 1-5nm.
The preparation method of the light emitting diode with quantum dots that the present embodiment provides, comprises the following steps:
A () gets ito glass substrate, be labeled as substrate 1, and adopt laser ablation or photoetching technique to produce electrode pattern on substrate 1, then use glass cleaning solution ultrasonic cleaning, the process of its ultrasonic cleaning is ultrasonic 30min under the condition of 70 DEG C.Then, with deionized water ultrasonic cleaning 30min, finally ito glass electrode base board is dried stand-by.
B substrate 1 after step (a) process is adopted UV ozone process 15min by (), then light emitting functional layer is made on substrate 1: prepare electron transfer layer successively in its surface successively particularly, quantum dot light emitting layer, electronic barrier layer, hole transmission layer, hole injection layer.Wherein, electron transfer layer adopts the method preparation of spin coating, and material therefor is ZnO nano particle, and concentration is 20mg/mL, and adopt n-butanol as solvent, the rotating speed of spin coating is 2000r/min, and the time is 60s, baking temperature 120 DEG C, time 30min; Quantum dot light emitting layer is also the method preparation adopting spin coating, and material therefor is CdSe/ZnS nuclear shell structure quantum point, and surface ligand is oleic acid, and the rotating speed of spin coating is 1500r/min, and the time is 60s, baking temperature 100 DEG C, time 5-6min; The material preparing electronic barrier layer is 4,4', 4 " and-three (carbazole-9-base) triphenylamine (TCTA); The material preparing hole transmission layer is N, N'-diphenyl-N, N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB); The material preparing hole injection layer is: 2,3,6,7,10,11-, six cyano group-Isosorbide-5-Nitrae, 5,8,9,12-six azepine benzophenanthrene (HATCN); Electronic barrier layer, hole transmission layer, hole injection layer adopts hot evaporation coating method, and evaporation deposition rate is
thickness is respectively 30nm, 40nm, 10nm.
C () provides another glass substrate, be labeled as substrate 2, get liquid gallium indium stannum alloy, in alloy, the mass percentage of gallium is 68%, the mass percentage of indium is 22%, and the mass percentage of tin is 10%, is stirred in atmosphere by described liquid gallium indium stannum alloy, make it fully oxidized, form the natural oxide layer that a layer thickness is 1-5nm on surface, then by described liquid gallium indium stannum alloy coating on a substrate 2, prepare gallium-indium-tin alloy second electrode.
D substrate 1 and substrate 2 fit together by (), namely hole injection layer and the second electrode are fitted, and use ultra-violet curing glue to fix, and obtain being inverted light emitting diode with quantum dots.
Embodiment 3
A preparation method for light emitting diode with quantum dots, comprises the following steps:
A () gets ito glass substrate, adopt laser ablation or photoetching technique to produce electrode pattern on substrate, then use glass cleaning solution ultrasonic cleaning, the process of its ultrasonic cleaning is ultrasonic 30min under the condition of 70 DEG C.Then, with deionized water ultrasonic cleaning 30min, finally ito glass electrode base board is dried stand-by.
B substrate after step (a) process is adopted UV ozone process 15min by (), then on substrate, make light emitting functional layer, hole injection layer is prepared in spin coating in its surface successively particularly, hole transmission layer, quantum dot light emitting layer, electron transfer layer.Wherein, the material of hole injection layer is PEDOT:PSS, and the rotating speed of spin coating is 3000r/min, baking temperature 150 DEG C, time 10min; The material of hole transmission layer is the concentration of PVK, PVK is 10mg/mL, and adopt chlorobenzene as solvent, the rotating speed of spin coating is 1500r/min, baking temperature 120 DEG C, time 20min; The material of quantum dot light emitting layer is CdSe/ZnS nuclear shell structure quantum point, and surface ligand is oleic acid, and concentration is 20mg/mL, and adopt normal octane as solvent, the rotating speed of spin coating is 1500r/min, baking temperature 100 DEG C, time 5-6min; The material of electron transfer layer is ZnO nano particle, and concentration is 20mg/mL, and adopt n-butanol as solvent, the rotating speed of spin coating is 2000r/min, baking temperature 60 DEG C, time 30min.
C () gets liquid gallium indium alloy, in described gallium-indium alloy, the mass percentage of gallium is 75%, the mass percentage of indium is 25%, is stirred in atmosphere by described liquid gallium indium alloy, makes it fully oxidized, the natural oxide layer that a layer thickness is 1-5nm is formed on surface, again described liquid gallium indium alloy is adopted the method printing of inkjet printing or silk screen printing on the electron transport layer, prepare gallium-indium alloy second electrode, obtain forward light emitting diode with quantum dots.
Embodiment 4
A preparation method for light emitting diode with quantum dots, comprises the following steps:
A () gets ito glass substrate, adopt laser ablation or photoetching technique to produce electrode pattern on substrate, then use glass cleaning solution ultrasonic cleaning, the process of its ultrasonic cleaning is ultrasonic 30min under the condition of 70 DEG C.Then, with deionized water ultrasonic cleaning 30min, finally ito glass electrode base board is dried stand-by.
B substrate after step (a) process is adopted UV ozone process 15min by (), then on substrate, light emitting functional layer is made: prepare electron transfer layer successively in its surface successively particularly, quantum dot light emitting layer, electronic barrier layer, hole transmission layer, hole injection layer.Wherein, electron transfer layer adopts the method preparation of spin coating, and material therefor is ZnO nano particle, and concentration is 20mg/mL, and adopt n-butanol as solvent, the rotating speed of spin coating is 2000r/min, and the time is 60s, baking temperature 120 DEG C, time 30min; Quantum dot light emitting layer is also the method preparation adopting spin coating, and material therefor is CdSe/ZnS nuclear shell structure quantum point, and surface ligand is oleic acid, and the rotating speed of spin coating is 1500r/min, and the time is 60s, baking temperature 100 DEG C, time 5-6min; The material preparing electronic barrier layer is TCTA; The material preparing hole transmission layer is NPB; The material preparing hole injection layer is HATCN; Electronic barrier layer, hole transmission layer, hole injection layer adopts hot evaporation coating method, and evaporation deposition rate is
thickness is respectively 30nm, 40nm, 10nm.
C () gets liquid gallium indium stannum alloy, in alloy, the mass percentage of gallium is 68%, and the mass percentage of indium is 22%, and the mass percentage of tin is 10%; Described liquid gallium indium stannum alloy is stirred in atmosphere, make it fully oxidized, the natural oxide layer that a layer thickness is 1-5nm is formed on surface, again described liquid gallium indium stannum alloy is adopted the method printing of inkjet printing or silk screen printing on the electron transport layer, prepare gallium-indium-tin alloy second electrode, obtain being inverted light emitting diode with quantum dots.
Embodiment 5
The difference of the present embodiment and embodiment 1 is only, in described gallium-indium alloy, the mass percentage of gallium is 80%, and the mass percentage of indium is 20%.
Embodiment 6
The difference of the present embodiment and embodiment 1 is only, in described gallium-indium alloy, the mass percentage of gallium is 70%, and the mass percentage of indium is 30%.
Embodiment 7
The difference of the present embodiment and embodiment 1 is only, in described gallium-indium alloy, the mass percentage of gallium is 65%, and the mass percentage of indium is 35%.
Embodiment 8
The difference of the present embodiment and embodiment 2 is only, in described gallium-indium-tin alloy, the mass percentage of gallium is 60%, and the mass percentage of indium is 25%, and the mass percentage of tin is 15%.
Embodiment 9
The difference of the present embodiment and embodiment 2 is only, in described gallium-indium-tin alloy, the mass percentage of gallium is 70%, and the mass percentage of indium is 15%, and the mass percentage of tin is 15%.
Embodiment 10
The difference of the present embodiment and embodiment 2 is only, in described gallium-indium-tin alloy, the mass percentage of gallium is 75%, and the mass percentage of indium is 20%, and the mass percentage of tin is 5%.
Reference examples 1
A preparation method for light emitting diode with quantum dots, comprises the following steps:
A () gets ito glass substrate, adopt laser ablation or photoetching technique to produce electrode pattern on substrate, then use glass cleaning solution ultrasonic cleaning, the process of its ultrasonic cleaning is ultrasonic 30min under the condition of 70 DEG C.Then, with deionized water ultrasonic cleaning 30min, finally ito glass electrode base board is dried stand-by.
B substrate after step (a) process is adopted UV ozone process 15min by (), then on substrate, light emitting functional layer is made: hole injection layer is prepared in spin coating in its surface successively particularly, hole transmission layer, quantum dot light emitting layer, electron transfer layer.Wherein, the material of hole injection layer is PEDOT:PSS, and the rotating speed of spin coating is 3000r/min, baking temperature 150 DEG C, time 10min; The material of hole transmission layer is the concentration of PVK, PVK is 10mg/mL, and adopt chlorobenzene as solvent, the rotating speed of spin coating is 1500r/min, baking temperature 120 DEG C, time 20min; The material of quantum dot light emitting layer is CdSe/ZnS nuclear shell structure quantum point, and surface ligand is oleic acid, and concentration is 20mg/mL, and adopt normal octane as solvent, the rotating speed of spin coating is 1500r/min, baking temperature 100 DEG C, time 5-6min; The material of electron transfer layer is ZnO nano particle, and concentration is 20mg/mL, and adopt n-butanol as solvent, the rotating speed of spin coating is 2000r/min, baking temperature 60 DEG C, time 30min.
C () adopts the method for vacuum evaporation on described hole injection layer, deposit the aluminium film of 150nm, form the second electrode, obtain light emitting diode with quantum dots.
Fig. 5 is the Current density-voltage-light characteristic figure of the light emitting diode with quantum dots in the embodiment of the present invention 1 and reference examples 1; Fig. 6 is the current efficiency-current density characteristics figure of the light emitting diode with quantum dots in the embodiment of the present invention 1 and reference examples 1; As can be seen from Figure, adopt gallium alloy metal electrode provided by the invention, light emitting diode with quantum dots shows better performance.
Reference examples 2
A preparation method for light emitting diode with quantum dots, comprises the following steps:
A () gets ito glass substrate, adopt laser ablation or photoetching technique to produce electrode pattern on substrate, then use glass cleaning solution ultrasonic cleaning, the process of its ultrasonic cleaning is ultrasonic 30min under the condition of 70 DEG C.Then, with deionized water ultrasonic cleaning 30min, finally ito glass electrode base board is dried stand-by.
B substrate after step (a) process is adopted UV ozone process 15min by (), then on substrate, light emitting functional layer is made: prepare electron transfer layer successively in its surface successively particularly, quantum dot light emitting layer, electronic barrier layer, hole transmission layer, hole injection layer.Wherein, electron transfer layer adopts the method preparation of spin coating, and material therefor is ZnO nano particle, and concentration is 20mg/mL, and adopt n-butanol as solvent, the rotating speed of spin coating is 2000r/min, and the time is 60s, baking temperature 120 DEG C, time 30min; Quantum dot light emitting layer is also the method preparation adopting spin coating, and material therefor is CdSe/ZnS nuclear shell structure quantum point, and surface ligand is oleic acid, and the rotating speed of spin coating is 1500r/min, and the time is 60s, baking temperature 100 DEG C, time 5-6min; The material preparing electronic barrier layer is TCTA; The material preparing hole transmission layer is NPB; The material preparing hole injection layer is HATCN; Electronic barrier layer, hole transmission layer, hole injection layer adopts hot evaporation coating method, and evaporation deposition rate is
thickness is respectively 30nm, 40nm, 10nm.
C () adopts the method for vacuum evaporation on described hole injection layer, deposit the aluminium film of 150nm, form the second electrode, obtain light emitting diode with quantum dots.
Fig. 7 is the Current density-voltage-light characteristic figure of the light emitting diode with quantum dots in the embodiment of the present invention 2 and reference examples 2; Fig. 8 is the current efficiency-current density characteristics figure of the light emitting diode with quantum dots in the embodiment of the present invention 2 and reference examples 2; Fig. 9 is the brightness-time response figure of the light emitting diode with quantum dots in the embodiment of the present invention 2 and reference examples 2.As can be seen from Figure, adopt gallium alloy metal electrode provided by the invention, light emitting diode with quantum dots shows higher efficiency, the longer life-span.
Should be understood that, the above-mentioned statement for present pre-ferred embodiments is comparatively detailed, and therefore can not think the restriction to scope of patent protection of the present invention, scope of patent protection of the present invention should be as the criterion with claims.
Claims (10)
1. a light-emitting diode, comprise substrate, and be cascading at the first electrode of described substrate surface, light emitting functional layer and the second electrode, described light emitting functional layer at least comprises luminescent layer, it is characterized in that, the material of described second electrode is gallium alloy, and the fusing point of described gallium alloy is lower than 30 DEG C, be at room temperature liquid, the surface of described second electrode has one deck natural oxide layer.
2. light-emitting diode according to claim 1, is characterized in that, described gallium alloy is gallium-indium alloy or is gallium-indium-tin alloy.
3. light-emitting diode according to claim 2, is characterized in that, in described gallium-indium alloy, the mass percentage of gallium is 50-90%, and the mass percentage of indium is 10-50%; In described gallium-indium-tin alloy, the mass percentage of gallium is less than 90% for being more than or equal to 50%, and the mass percentage of indium is 10-30%, and the mass percentage of tin is less than or equal to 20% for being greater than 0.
4. light-emitting diode according to claim 1, is characterized in that, the thickness of described natural oxide layer is 1-5nm, and the material of described natural oxide layer is gallium oxide.
5. light-emitting diode according to claim 1, is characterized in that, described light emitting functional layer comprises and is cascading at the hole injection layer of described first electrode surface, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer; Or comprise and being cascading at the electron injecting layer of described first electrode surface, electron transfer layer, luminescent layer, hole transmission layer and hole injection layer.
6. a preparation method for light-emitting diode, is characterized in that, comprises the following steps:
There is provided a substrate, stack gradually preparation first electrode and light emitting functional layer at described substrate surface, described light emitting functional layer at least comprises luminescent layer;
Get gallium alloy, described gallium alloy is fully oxidized in atmosphere, then by described gallium alloy printing, print or be coated in described light emitting functional layer surface, form the second electrode, obtain light-emitting diode; Or the second substrate is provided, by described fully oxidized after gallium alloy printing, print or be coated in described second substrate surface, form the second electrode, described second electrode and described light emitting functional layer fit together, and adopt ultra-violet curing glue to fix, obtain light-emitting diode;
The fusing point of described gallium alloy is lower than 30 DEG C, and described gallium alloy is at room temperature liquid, and the surface of described second electrode has one deck natural oxide layer.
7. the preparation method of light-emitting diode according to claim 6, is characterized in that, described gallium alloy is gallium-indium alloy or is gallium-indium-tin alloy.
8. the preparation method of light-emitting diode according to claim 7, is characterized in that, in described gallium-indium alloy, the mass percentage of gallium is 50-90%, and the mass percentage of indium is 10-50%; In described gallium-indium-tin alloy, the mass percentage of gallium is less than 90% for being more than or equal to 50%, and the mass percentage of indium is 10-30%, and the mass percentage of tin is less than or equal to 20% for being greater than 0.
9. the preparation method of light-emitting diode according to claim 6, is characterized in that, the thickness of described natural oxide layer is 1-5nm, and the material of described natural oxide layer is gallium oxide.
10. the preparation method of light-emitting diode according to claim 6, it is characterized in that, described light emitting functional layer comprises and is cascading at the hole injection layer of described first electrode surface, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer; Or comprise and being cascading at the electron injecting layer of described first electrode surface, electron transfer layer, luminescent layer, hole transmission layer and hole injection layer.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106159110A (en) * | 2016-09-14 | 2016-11-23 | Tcl集团股份有限公司 | A kind of AgNWs thin film, light emitting diode with quantum dots and preparation method thereof |
| WO2017128457A1 (en) * | 2016-01-25 | 2017-08-03 | 深圳市华星光电技术有限公司 | Quantum dot light-emitting device and manufacturing method therefor and liquid crystal display device |
| CN108365016A (en) * | 2018-01-31 | 2018-08-03 | 云南靖创液态金属热控技术研发有限公司 | A kind of liquid metal flexibility rectifier diode |
| CN108449863A (en) * | 2018-05-07 | 2018-08-24 | 北京梦之墨科技有限公司 | A kind of multilayer circuit |
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| WO2022143558A1 (en) * | 2020-12-31 | 2022-07-07 | Tcl科技集团股份有限公司 | Method for preparing quantum dot light-emitting diode |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002075820A1 (en) * | 2001-03-16 | 2002-09-26 | Elam-T Limited | Electroluminescent devices |
| US20060066224A1 (en) * | 2004-07-30 | 2006-03-30 | Dai Nippon Printing Co., Ltd. | Organic functional element, organic EL element, organic semiconductor element, organic TFT element and method for producing the same |
| CN101916831A (en) * | 2010-06-30 | 2010-12-15 | 华南理工大学 | Method for preparing organic light-emitting diode (OLED) display screen by full printing process |
| CN102802346A (en) * | 2011-05-27 | 2012-11-28 | 中国科学院理化技术研究所 | Liquid metal printed circuit board and preparation method thereof |
| CN102956737A (en) * | 2011-08-17 | 2013-03-06 | 苏州捷迪纳米科技有限公司 | Carbon nanotube solar cell and preparation method thereof |
-
2015
- 2015-09-25 CN CN201510622188.8A patent/CN105206761B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002075820A1 (en) * | 2001-03-16 | 2002-09-26 | Elam-T Limited | Electroluminescent devices |
| US20060066224A1 (en) * | 2004-07-30 | 2006-03-30 | Dai Nippon Printing Co., Ltd. | Organic functional element, organic EL element, organic semiconductor element, organic TFT element and method for producing the same |
| CN101916831A (en) * | 2010-06-30 | 2010-12-15 | 华南理工大学 | Method for preparing organic light-emitting diode (OLED) display screen by full printing process |
| CN102802346A (en) * | 2011-05-27 | 2012-11-28 | 中国科学院理化技术研究所 | Liquid metal printed circuit board and preparation method thereof |
| CN102956737A (en) * | 2011-08-17 | 2013-03-06 | 苏州捷迪纳米科技有限公司 | Carbon nanotube solar cell and preparation method thereof |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017128457A1 (en) * | 2016-01-25 | 2017-08-03 | 深圳市华星光电技术有限公司 | Quantum dot light-emitting device and manufacturing method therefor and liquid crystal display device |
| US10050220B2 (en) | 2016-01-25 | 2018-08-14 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Quantum dot light emitting element including water/alcohol soluble conjugated polymer based electron injection/electron transporting layer, manufacturing method thereof and liquid crystal display device |
| CN106159110A (en) * | 2016-09-14 | 2016-11-23 | Tcl集团股份有限公司 | A kind of AgNWs thin film, light emitting diode with quantum dots and preparation method thereof |
| CN108365016A (en) * | 2018-01-31 | 2018-08-03 | 云南靖创液态金属热控技术研发有限公司 | A kind of liquid metal flexibility rectifier diode |
| CN108365016B (en) * | 2018-01-31 | 2021-02-02 | 云南靖创液态金属热控技术研发有限公司 | Liquid metal flexible rectifier diode |
| CN108449863A (en) * | 2018-05-07 | 2018-08-24 | 北京梦之墨科技有限公司 | A kind of multilayer circuit |
| CN109103095A (en) * | 2018-08-03 | 2018-12-28 | 清华大学 | A kind of diode and preparation method thereof |
| CN109545991A (en) * | 2018-10-24 | 2019-03-29 | 东北石油大学 | Application of the gold nano bipyramid in OLED device |
| CN112125512A (en) * | 2020-10-10 | 2020-12-25 | 深圳市汇坤科技有限公司 | Explosion-proof screen and application thereof in terminal for children |
| CN112125512B (en) * | 2020-10-10 | 2023-08-18 | 深圳市汇坤科技有限公司 | Explosion-proof screen and application thereof in terminal for children |
| WO2022143558A1 (en) * | 2020-12-31 | 2022-07-07 | Tcl科技集团股份有限公司 | Method for preparing quantum dot light-emitting diode |
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