CN106159110A - A kind of AgNWs thin film, light emitting diode with quantum dots and preparation method thereof - Google Patents
A kind of AgNWs thin film, light emitting diode with quantum dots and preparation method thereof Download PDFInfo
- Publication number
- CN106159110A CN106159110A CN201610823480.0A CN201610823480A CN106159110A CN 106159110 A CN106159110 A CN 106159110A CN 201610823480 A CN201610823480 A CN 201610823480A CN 106159110 A CN106159110 A CN 106159110A
- Authority
- CN
- China
- Prior art keywords
- agnws
- thin film
- preparation
- layer
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention open a kind of AgNWs thin film, light emitting diode with quantum dots and preparation method thereof, method includes step: first by lauryl sodium sulfate aqueous solution that volume ratio is 150:1 ~ 20:1 and dimethyl dodecyl amine oxide aqueous solution, add 48 ~ 52mg/mLAgNWs aqueous solution, Vibratory Mixing, forms the mixed liquor containing bubble not of uniform size；Then above-mentioned mixed liquor is coated on substrate, naturally dries after annealing, obtain AgNWs thin film.The present invention, by rocking AgNWs aqueous solution energetically, forms a large amount of bubbles not of uniform size, and this bubble can be as the accole of AgNWs growth, and AgNWs is easily in bubble marginal growth, and self assembly.Then it is air-dried, after annealing, obtain the AgNWs thin film with satisfactory electrical conductivity and light transmission.The inventive method is simple, and cost is cheap, it is easy to processing, is a kind of method substituting ito transparent electrode.
Description
Technical field
The present invention relates to LED technology field, particularly relate to a kind of AgNWs thin film, light emitting diode with quantum dots and
Its preparation method.
Background technology
Semiconductor-quantum-point has the optico-electronic properties that size adjustable is humorous, be widely used in light emitting diode,
Solaode and biological fluorescent labelling.Quantum dot synthetic technology was through the development of more than 20 years, and people can synthesize respectively
Planting high-quality nano material, its photoluminescence efficiency can reach more than 85%.Owing to quantum dot has dimension adjustable
The features such as luminescence, isolychn width, photoluminescence efficiency height and heat stability, therefore using quantum dot as the quantum dot of luminescent layer
Light emitting diode (QLED) is display of future generation and the solid-state illumination light source of great potential.
Light emitting diode with quantum dots (QLED) is because possessing the plurality of advantages such as high brightness, low-power consumption, wide colour gamut, easy processing in recent years
Obtain and pay close attention in illumination and display field widely and study.Through development for many years, QLED technology obtains huge
Development.From the point of view of the documents and materials of open report, the external quantum efficiency of the highest redness and green QLED already more than or
Person close to 20%, show the internal quantum efficiency of red green QLED actually already close to 100% the limit.But, complete as high-performance
It is red green that colour display screen shows that indispensable blue QLED is whether far below at electro-optical efficiency at present
QLED, thus limit QLED application in terms of full-color display.
Due to lacking of indium, the application causing ITO is limited, and academia always searches for substituting ITO and does the material of electrode
Material, AgNWs is a kind of transparent conductor that can do electrode, but after being self-assembly of electrode due to it, its light transmittance and electricity
Conductance has certain restriction.
Therefore, prior art has yet to be improved and developed.
Summary of the invention
In view of above-mentioned the deficiencies in the prior art, it is an object of the invention to provide a kind of AgNWs thin film, quantum dot light emitting two
Pole pipe and preparation method thereof, it is intended to solving after existing AgNWs is self-assembly of electrode, its light transmittance and electrical conductivity have a fixed limit
The problem of system.
Technical scheme is as follows:
A kind of preparation method of AgNWs thin film, wherein, including step:
First by water-soluble with dimethyl dodecyl amine oxide for lauryl sodium sulfate aqueous solution that volume ratio is 150:1 ~ 20:1
Liquid mixes, and adds 48 ~ 52mg/mLAgNWs aqueous solution, Vibratory Mixing, forms the mixing containing bubble not of uniform size
Liquid；
Then above-mentioned mixed liquor is coated on substrate, naturally dries after annealing, obtain AgNWs thin film.
The preparation method of described AgNWs thin film, wherein, described lauryl sodium sulfate aqueous solution is the 12 of 2-4wt%
Alkylsurfuric acid sodium water solution.
The preparation method of described AgNWs thin film, wherein, described dimethyl dodecyl amine oxide aqueous solution is 32-
The dimethyl dodecyl amine oxide aqueous solution of 34wt%.
The preparation method of described AgNWs thin film, wherein, by turbula shaker Vibratory Mixing.
The preparation method of described AgNWs thin film, wherein, the thickness of described mixed liquor coating is 0.1 ~ 2mm.
The preparation method of described AgNWs thin film, wherein, anneals at 180 ~ 220 DEG C.
The preparation method of described AgNWs thin film, wherein, anneal duration is 18 ~ 22min.
A kind of AgNWs thin film, wherein, uses the preparation method of arbitrary described AgNWs thin film to be prepared from.
A kind of preparation method of light emitting diode with quantum dots, wherein, including step:
A, on cathode layer, it is sequentially prepared electron injecting layer and electron transfer layer；
B, prepare quantum dot light emitting layer on the electron transport layer；
C, on quantum dot light emitting layer, it is sequentially prepared hole transmission layer and anode layer, forms QLED；Wherein, described anode layer is
AgNWs thin film as mentioned above.
A kind of light emitting diode with quantum dots, it is characterised in that use the preparation of light emitting diode with quantum dots as above
Method is prepared from, and described light emitting diode with quantum dots includes cathode layer, electron injecting layer, electric transmission the most successively
Layer, quantum dot light emitting layer, hole transmission layer and anode layer.
Beneficial effect: the present invention, by rocking AgNWs aqueous solution energetically, forms a large amount of bubbles not of uniform size, this gas
Bubble can be as the accole of AgNWs growth, and AgNWs is easily in bubble marginal growth, and self assembly.Then it is air-dried, move back
The AgNWs thin film with satisfactory electrical conductivity and light transmission is obtained after fire.The inventive method is simple, and cost is cheap, it is easy to processing is raw
Produce, be a kind of method substituting ito transparent electrode.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention a kind of AgNWs thin film preferred embodiment.
Fig. 2 is the flow chart of the preparation method preferred embodiment of a kind of light emitting diode with quantum dots of the present invention.
Fig. 3 is the structural representation of the present invention a kind of light emitting diode with quantum dots preferred embodiment.
Detailed description of the invention
The present invention provides a kind of AgNWs thin film, light emitting diode with quantum dots and preparation method thereof, for making the mesh of the present invention
, technical scheme and effect clearer, clear and definite, the present invention is described in more detail below.Should be appreciated that described herein
Specific embodiment only in order to explain the present invention, be not intended to limit the present invention.
A kind of preparation method preferred embodiment of the AgNWs thin film of the present invention, it includes step:
First by water-soluble with dimethyl dodecyl amine oxide for lauryl sodium sulfate aqueous solution that volume ratio is 150:1 ~ 20:1
Liquid mixes, and adds 48 ~ 52mg/mLAgNWs aqueous solution, Vibratory Mixing, forms the mixing containing bubble not of uniform size
Liquid；
Above-mentioned steps is specifically, by the lauryl sodium sulfate aqueous solution of 2-4wt% that volume ratio is 150:1 ~ 20:1 and 32-
The dimethyl dodecyl amine oxide aqueous solution of 34wt%, adds 48 ~ 52mg/mLAgNWs aqueous solution (such as 50mg/
MLAgNWs aqueous solution) mixing, by turbula shaker Vibratory Mixing, form the mixed liquor containing bubble not of uniform size.
Preferably, lauryl sodium sulfate aqueous solution of the present invention: dimethyl dodecyl amine oxide (LDAO) aqueous liquid
Long-pending ratio is 120:1 ~ 80:1.This is because lauryl sodium sulfate aqueous solution: dimethyl dodecyl amine oxide (LDAO) is water-soluble
When liquid volume ratio is close to 150:1, mixture bubble showed increased, but too much bubble become AgNWs self assembly depend on thing,
Thus forming the densest AgNWs thin film so that AgNWs film conductivity improves, and light transmission weakens.Sodium lauryl sulphate
Aqueous solution: when dimethyl dodecyl amine oxide (LDAO) aqueous solution volume ratio is close to 20:1, mixture bubble reduces, and is formed relatively
For sparse AgNWs thin film so that the light transmittance of AgNWs thin film improves naturally, but electric conductivity is poor simultaneously.Above-mentioned in the present invention
In the range of preferably, the AgNWs thin film prepared has high electric conductivity and light transmittance simultaneously.
Then above-mentioned mixed liquor is coated on substrate, naturally dries after annealing, obtain AgNWs thin film.
Above-mentioned steps specifically, then above-mentioned mixed liquor is coated on substrate (such as glass), after naturally drying 180 ~
220 DEG C (such as 200 DEG C) annealing, 18 ~ 22min(such as 20min), obtain AgNWs thin film.Preferably, the thickness of described solution coating is
0.1~2mm。
The present invention, by rocking AgNWs aqueous solution energetically, forms a large amount of bubbles not of uniform size, and this bubble can conduct
The accole of AgNWs growth, AgNWs is easily in bubble marginal growth, and self assembly.Then it is air-dried, had after annealing
There is the AgNWs thin film of satisfactory electrical conductivity and light transmission.The inventive method is simple, and cost is cheap, it is easy to processing, is that one is replaced
Method for ito transparent electrode.
The present invention provides a kind of AgNWs thin film, its use arbitrary described AgNWs thin film preparation method preparation and
Become.Shown in Fig. 1, Fig. 1 is the structural representation of the present invention a kind of AgNWs thin film preferred embodiment, the AgNWs of Fig. 1 structure
Thin film has good light transmittance and electrical conductivity.
The present invention also provides for the application of a kind of AgNWs thin film, wherein, described AgNWs thin film is used as light emitting diode
Anode, described AgNWs thin film is also used as the negative electrode of solaode.AgNWs thin film the most of the present invention can apply to
Substituting ito anode in light emitting diode with quantum dots device, described AgNWs thin film can also be applied to solar battery pas height printing opacity
The cathode material of high conductance.
Specifically, the present invention also provides for the flow chart of the preparation method preferred embodiment of a kind of light emitting diode with quantum dots,
As in figure 2 it is shown, include step:
S100, on cathode layer, it is sequentially prepared electron injecting layer and electron transfer layer；
In step S100 of the present invention, described cathode layer can be silver or aluminum.The present invention can be at negative electrode in the way of using spin coating
Electron injecting layer is prepared on Ceng；Described electron injecting layer can be but be not limited to PEDOT:PSS, molybdenum oxide, vanadium oxide, tungsten oxide
In one.The present invention then can prepare electron transfer layer by the way of spin coating on electron injecting layer；Described electronics passes
Defeated layer can be but be not limited to one or more in Poly-TPD, PVK, CBP.
S200, prepare quantum dot light emitting layer on the electron transport layer；
In step S200 of the present invention, described quantum dot light emitting layer can be CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, ZnTe,
GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InSb, AlAs, AlP, CuInS, CuInSe and various nucleocapsid
At least one in structure quantum point or alloy structure quantum dot.
S300, on quantum dot light emitting layer, it is sequentially prepared hole transmission layer and anode layer, forms QLED；Wherein, described
Anode layer is AgNWs thin film described above.
In step S300 of the present invention, and then preparing hole transmission layer on quantum dot light emitting layer, most common of which is empty
The material of cave transport layer is the N-shaped ZnO with high electronic transmission performance, can also be the metals such as the Ca of low work function, Ba, also
Can be CsF, LiF, CsCO3And Alq3Deng compound-material.
The present invention also provides for a kind of light emitting diode with quantum dots, wherein, uses light emitting diode with quantum dots as above
Preparation method be prepared from, described light emitting diode with quantum dots includes cathode layer, electron injecting layer, electronics the most successively
Transport layer, quantum dot light emitting layer, hole transmission layer and anode layer.
Fig. 3 is the structural representation of the present invention a kind of light emitting diode with quantum dots preferred embodiment, as it is shown on figure 3, this
Bright light emitting diode with quantum dots includes cathode layer 1, electron injecting layer 2, electron transfer layer 3, quantum dot light emitting the most successively
Layer 4, hole transmission layer 5 and anode layer 6；Wherein, the material of described anode layer is AgNWs thin film described above.
In sum, a kind of AgNWs thin film of present invention offer, light emitting diode with quantum dots and preparation method thereof.This
Bright by AgNWs aqueous solution is rocked energetically, form a large amount of bubbles not of uniform size, this bubble can be as AgNWs growth
Accole, AgNWs is easily in bubble marginal growth, and self assembly.Then it is air-dried, after annealing, obtain that there is satisfactory electrical conductivity
AgNWs thin film with light transmission.The inventive method is simple, and cost is cheap, it is easy to processing, is a kind of replacement transparent electricity
The method of pole.
It should be appreciated that the application of the present invention is not limited to above-mentioned citing, for those of ordinary skills, can
To be improved according to the above description or to convert, all these modifications and variations all should belong to the guarantor of claims of the present invention
Protect scope.
Claims (10)
1. the preparation method of an AgNWs thin film, it is characterised in that include step:
First by water-soluble with dimethyl dodecyl amine oxide for lauryl sodium sulfate aqueous solution that volume ratio is 150:1 ~ 20:1
Liquid mixes, and adds 48 ~ 52mg/mLAgNWs aqueous solution, Vibratory Mixing, forms the mixing containing bubble not of uniform size
Liquid；
Then above-mentioned mixed liquor is coated on substrate, naturally dries after annealing, obtain AgNWs thin film.
The preparation method of AgNWs thin film the most according to claim 1, it is characterised in that described sodium lauryl sulphate water
Solution is the lauryl sodium sulfate aqueous solution of 2-4wt%.
The preparation method of AgNWs thin film the most according to claim 1, it is characterised in that described dodecyl dimethyl oxygen
Change the dimethyl dodecyl amine oxide aqueous solution that amine aqueous solution is 32-34wt%.
The preparation method of AgNWs thin film the most according to claim 1, it is characterised in that stirred by turbula shaker vibration
Mix.
The preparation method of AgNWs thin film the most according to claim 1, it is characterised in that the thickness of described mixed liquor coating
It is 0.1 ~ 2mm.
The preparation method of AgNWs thin film the most according to claim 1, it is characterised in that anneal at 180 ~ 220 DEG C.
The preparation method of AgNWs thin film the most according to claim 1, it is characterised in that anneal duration is 18 ~ 22min.
8. an AgNWs thin film, it is characterised in that the preparation method of employing AgNWs thin film as described in claim 1 ~ 7 is arbitrary
It is prepared from.
9. the preparation method of a light emitting diode with quantum dots, it is characterised in that include step:
A, on cathode layer, it is sequentially prepared electron injecting layer and electron transfer layer；
B, prepare quantum dot light emitting layer on the electron transport layer；
C, on quantum dot light emitting layer, it is sequentially prepared hole transmission layer and anode layer, forms QLED；Wherein, described anode layer is
AgNWs thin film described in claim 8.
10. a light emitting diode with quantum dots, it is characterised in that use light emitting diode with quantum dots as claimed in claim 9
Preparation method be prepared from, described light emitting diode with quantum dots includes cathode layer, electron injecting layer, electronics the most successively
Transport layer, quantum dot light emitting layer, hole transmission layer and anode layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610823480.0A CN106159110A (en) | 2016-09-14 | 2016-09-14 | A kind of AgNWs thin film, light emitting diode with quantum dots and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610823480.0A CN106159110A (en) | 2016-09-14 | 2016-09-14 | A kind of AgNWs thin film, light emitting diode with quantum dots and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106159110A true CN106159110A (en) | 2016-11-23 |
Family
ID=57341025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610823480.0A Pending CN106159110A (en) | 2016-09-14 | 2016-09-14 | A kind of AgNWs thin film, light emitting diode with quantum dots and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106159110A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112108157A (en) * | 2019-06-20 | 2020-12-22 | 天津城建大学 | Ag2S quantum dot sensitized nano-lobate InVO4Method for producing thin film |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002202737A (en) * | 2000-12-28 | 2002-07-19 | Nec Corp | Method of manufacturing light-emitting element, and the light-emitting element |
| CN102352082A (en) * | 2011-07-15 | 2012-02-15 | 宁波大学 | Preparation method of micron / submicron gold nanoparticle ring and gold ring |
| CN105206761A (en) * | 2015-09-25 | 2015-12-30 | 南方科技大学 | Light emitting diode and preparation method thereof |
| CN105845834A (en) * | 2016-04-07 | 2016-08-10 | 上海大学 | Inverted green light quantum dot film electroluminescence device |
-
2016
- 2016-09-14 CN CN201610823480.0A patent/CN106159110A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002202737A (en) * | 2000-12-28 | 2002-07-19 | Nec Corp | Method of manufacturing light-emitting element, and the light-emitting element |
| CN102352082A (en) * | 2011-07-15 | 2012-02-15 | 宁波大学 | Preparation method of micron / submicron gold nanoparticle ring and gold ring |
| CN105206761A (en) * | 2015-09-25 | 2015-12-30 | 南方科技大学 | Light emitting diode and preparation method thereof |
| CN105845834A (en) * | 2016-04-07 | 2016-08-10 | 上海大学 | Inverted green light quantum dot film electroluminescence device |
Non-Patent Citations (2)
| Title |
|---|
| TAKEHIRO TOKUNO: "Transparent Electrodes Fabricated via the Self-Assembly of Silver Nanowires Using a Bubble Template", 《LANGMUIR》 * |
| 陈世龙等: "纳米Ag链的制备及其在聚氨酯基柔性导电复合材料中的应用", 《复合材料学报》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112108157A (en) * | 2019-06-20 | 2020-12-22 | 天津城建大学 | Ag2S quantum dot sensitized nano-lobate InVO4Method for producing thin film |
| CN112108157B (en) * | 2019-06-20 | 2023-05-12 | 天津城建大学 | Ag (silver) alloy 2 S quantum dot sensitized nano leaf-shaped InVO 4 Method for producing film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105655495B (en) | Quantum dot light emitting device and preparation method thereof and liquid crystal display device | |
| CN103345884B (en) | double-side display device and preparation method thereof | |
| Yang et al. | Organometal halide perovskite quantum dots: synthesis, optical properties, and display applications | |
| CN105096749B (en) | A kind of display device and preparation method thereof | |
| CN105259683B (en) | The preparation method and COA type array base paltes of COA type array base paltes | |
| CN105304684B (en) | Colour display device and preparation method thereof | |
| CN102610725B (en) | Semiconductor quantum dot light-emitting diode and preparing method thereof | |
| CN105242449A (en) | Preparation method for quantum dot colored film substrate and quantum dot colored film substrate | |
| CN105261709A (en) | Organic light emitting device of doping quantum dots and manufacturing method thereof | |
| CN106098720A (en) | Micro-light emitting diode indicator | |
| WO2019148747A1 (en) | Display panel and display device | |
| CN107275499A (en) | A kind of light emitting diode with quantum dots and preparation method thereof | |
| CN107331789B (en) | OLED display panel and preparation method thereof | |
| CN106229393A (en) | A kind of light emitting diode and preparation method thereof | |
| CN103869391A (en) | Color reinforcing film, and utilization structure, utilization method and manufacturing method of the color reinforcing film | |
| CN105826483A (en) | Quantum dot light-emitting diode and preparation method thereof | |
| CN104021735B (en) | A kind of quantum dot light emitting display screen and preparation method thereof | |
| CN105304829A (en) | Double-sided emission quantum dot light emitting diode and manufacturing method thereof | |
| CN205666251U (en) | Spontaneous white light emitting diode | |
| CN104681736A (en) | OLED (Organic Light Emitting Diode) unit, manufacturing method of OLED unit and display panel | |
| CN106159102A (en) | Lamination QLED device and preparation method thereof | |
| WO2020093309A1 (en) | Display panel and manufacturing method therefor | |
| CN103346164A (en) | Organic light-emitting device with adjustable color and manufacturing method thereof | |
| CN109935704A (en) | QLED device and preparation method thereof | |
| CN107204401A (en) | A kind of QLED devices and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161123 |
|
| RJ01 | Rejection of invention patent application after publication |