CN108896104A - Pressure and temperature sensor based on wafer bonding and preparation method thereof - Google Patents
Pressure and temperature sensor based on wafer bonding and preparation method thereof Download PDFInfo
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- CN108896104A CN108896104A CN201810503373.9A CN201810503373A CN108896104A CN 108896104 A CN108896104 A CN 108896104A CN 201810503373 A CN201810503373 A CN 201810503373A CN 108896104 A CN108896104 A CN 108896104A
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- metal layer
- pressure
- bonding
- circular areas
- border circular
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D21/00—Measuring or testing not otherwise provided for
- G01D21/02—Measuring two or more variables by means not covered by a single other subclass
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D11/00—Component parts of measuring arrangements not specially adapted for a specific variable
Abstract
The invention discloses the production methods of a kind of pressure based on wafer bonding and temperature sensor.Method includes：1) metal layer is made on silicon wafer；The metal layer includes centrally located border circular areas and surrounds the border circular areas and be equipped with the annular region in gap with border circular areas；2) filled polymer and piezoelectricity particle；3) structure that two steps 2) obtain is directed at bonding up and down；4) it punches, fills metal.The present invention is based on the pressure of wafer bonding and temperature sensors can be realized low temperature, low pressure, quickly metal disk is bonded together, and at the same time, realizes being electrically connected for vertical direction, the resistance value of vertical direction is sensitive to pressure and temperature.
Description
Technical field
The invention belongs to microelectromechanical systems fields, specifically design a kind of pressure and temperature sensing based on wafer bonding
Device and preparation method thereof.
Background technique
MEMS sensor is a kind of sensor greatly applied recently.Compared with previous traditional various kinds of sensors,
It has the advantages that device volume is small, light-weight, low energy consumption, inertia is small, high reliablity, response time are short, and mechanical electric
Function admirable.In addition the designing technique and manufacturing process of a series of integrated circuits can be used just because of MEMS sensor,
To facilitate it high-precision, low cost produce by batch, greatly reduce production cost.MEMS sensor, in water
Sharp water power, railway traffic, intelligent building, production automatic control, aerospace, military project, petrochemical industry, oil well, electric power, ship, lathe, pipe
There is boundless application space in the multiple fields such as road, medical treatment.Using numerous MEMS sensors, we can measure pressure
The big portion of power, power, acceleration, angular speed, flow, magnetic field, imaging, gas componant, ion and molecular concentration and biomass etc.
Divide parameter, meets the needs of life and production comprehensively.
Wafer bonding is typically used to make MEMS pressure sensor, however few at present same constantly based on wafer bonding
Between pressure and temperature sense method.
Summary of the invention
It is an object of the invention to overcome the deficiencies of the prior art and provide a kind of pressure and temperature based on wafer bonding
Sensor and preparation method thereof.
The invention discloses the production methods of a kind of pressure based on wafer bonding and temperature sensor comprising following step
Suddenly：
1) metal layer is made on silicon wafer；The metal layer includes centrally located border circular areas and the encirclement circle
Region and the annular region that gap is equipped with border circular areas；
2) filled polymer and piezoelectricity particle；
Gap spin on polymers between the border circular areas and ring region of the metal layer；In the metal layer
Border circular areas fills piezoelectricity particle；
3) it is bonded；
The structure that two steps 2) obtain is directed at bonding up and down；
4) it punches, fills metal.
To punching on the upper lower silicon slice of the structure of step 3) acquisition, punch position is located at metal layer central circular, beats
Hole depth is until bare metal layer；Metal is filled in gained hole to get pressure and temperature sensor based on wafer bonding.
Preferably, the step 1) is specially:
1.1) silicon chip surface splash-proofing sputtering metal layer；
1.2) in metal layer corresponding position spin coating photoresist as mask, photoetching；
1.3) metal of wet etching corresponding position, then removes photoresist.
Preferably, the step 2) is specially:
2.1) the gap spin on polymers between the border circular areas of the metal layer and ring region；
2.2) dry etching；
2.3) piezoelectricity particle is filled in the border circular areas of the metal layer.
Preferably, the drilling method of the step 4) is to be punched using the method for deep etching.
Preferably, the metal layer material is copper or aluminium, with a thickness of 50 microns.
Preferably, in the step 2), polymer is BCB glue film, and piezoelectricity particle is graphite particle.
Preferably, the graphite particle diameter is less than 300 μm.
Preferably, in the step 4), the aperture of punching is 50 microns, and silicon wafer thickness is 500 microns.
Preferably, the technological parameter of the bonding steps is；Bonding time is 3min, and bonding pressure is 0.1MPa, key
Closing temperature is 150 DEG C.
Compared with prior art, the present invention possessed have the beneficial effect that：
1) it can be realized low temperature, low pressure, quickly metal disk be bonded together, at the same time, realize vertical direction
Be electrically connected.
2) resistance value of vertical direction is sensitive to pressure and temperature, and pressure sensor and temperature sensor may be implemented.
Detailed description of the invention
Fig. 1 is silicon chip surface splash-proofing sputtering metal layer schematic diagram；
Fig. 2 is spin coating photoresist as mask schematic diagram；
Fig. 3 is that metal layer schematic diagram is made on silicon wafer；
Fig. 4 is gap filling polymer schematic diagram；
Fig. 5 is dry etching schematic diagram；
Fig. 6 is filling piezoelectricity particle schematic diagram；
Fig. 7 is bonding process schematic diagram of the present invention；
Fig. 8 is method punching and the filling metal schematic diagram of deep etching；
Fig. 9 is impressed pressure schematic diagram.
Specific embodiment
The production method of pressure and temperature sensor based on wafer bonding of the invention comprising following steps：
1) metal layer is made on silicon wafer；The metal layer includes centrally located border circular areas and the encirclement circle
Region and the annular region that gap is equipped with border circular areas；
2) filled polymer and piezoelectricity particle；
Gap spin on polymers between the border circular areas and ring region of the metal layer；In the metal layer
Border circular areas fills piezoelectricity particle；
3) it is bonded；
The structure that two steps 2) obtain is directed at bonding up and down；
4) it punches, fills metal.
To punching on the upper lower silicon slice of the structure of step 3) acquisition, punch position is located at metal layer central circular, beats
Hole depth is until bare metal layer；Metal is filled in gained hole to get pressure and temperature sensor based on wafer bonding.
In one particular embodiment of the present invention, specific manufacturing process is as follows：
1, prepare N-shaped<100>Twin polishing silicon wafer is as silicon substrate, sputteringMetal layer, as shown in Figure 1；
2. making window by lithography, as shown in Figure 2 in surface of silicon spin coating photoresist；
3. carrying out wet etching using metal erosion solution, corrode bonding glue filling gap out, as shown in Figure 3
4. spin coating is bonded glue on silicon wafer, photoresist spinner first revolves 10s with low speed 500rps, is followed by 2000rp revolving speed spin coating
10min, as shown in Figure 4.
5. being bonded glue using oxygen plasma etch, microscope carrier power is 600W, and etch period 2min etches piezoelectricity
Grain filling gap, as shown in Figure 5
6. filling conductive particle, conductive particle is preferably the graphite particle within 300 μm of diameter, as shown in Figure 6.
7. alignment bonding, as shown in fig. 7, bonding time is 3min, bonding pressure is 0.1MPa, and bonding temperature is 150 DEG C.
8. the place for needing vertical vias to connect carries out DRIE over etching with exposure mask, through-hole is formed.Wherein, SF6Gas stream
Amount is 130sccm, C4F8Gas flow is 100sccm, and microscope carrier power is 600W, APC (automatic pressure control) selection 60.Per quarter
9s post-passivation 7s is lost, etching and passivation is allowed alternately to ultimately form satisfactory through-hole, gold is filled by the way of plating
Belong to copper, forms copper vias, as shown in Figure 8.
As described in Figure 9, pressure of the present invention and the working principle of temperature sensor are：When impressed pressure effect, conductive
Grain is under pressure, and resistance changes.Pressure can be speculated according to the variation of resistance
When additional constant pressure, the variation of temperature will lead to the variation of polymer elasticity modulus, cause under constant pressure
The pressure that conductive particle is subject under different temperatures is different, so as to cause resistance variations, to speculate temperature change.Of the invention
The resistance value of device vertical direction is sensitive to pressure and temperature, and pressure sensor and temperature sensor may be implemented.
Claims (10)
1. a kind of production method of pressure and temperature sensor based on wafer bonding, it is characterised in that including：
1) metal layer is made on silicon wafer；The metal layer includes centrally located border circular areas and the encirclement border circular areas
And the annular region in gap is equipped with border circular areas；
2) filled polymer and piezoelectricity particle；
Gap spin on polymers between the border circular areas and ring region of the metal layer；In the circle of the metal layer
Area filling piezoelectricity particle；
3) it is bonded；
The structure that two steps 2) obtain is directed at bonding up and down；
4) it punches, fills metal；
To punching on the upper lower silicon slice of the structure of step 3) acquisition, punch position is located at metal layer central circular, and punching is deep
Degree is until bare metal layer；Metal is filled in gained hole to get pressure and temperature sensor based on wafer bonding.
2. manufacturing method according to claim 1, it is characterised in that the step 1) is specially:
1.1) silicon chip surface splash-proofing sputtering metal layer；
1.2) in metal layer corresponding position spin coating photoresist as mask, photoetching；
1.3) metal of wet etching corresponding position, then removes photoresist.
3. manufacturing method according to claim 1, it is characterised in that the step 2) is specially:
2.1) the gap spin on polymers between the border circular areas of the metal layer and ring region；
2.2) dry etching, to etch piezoelectricity particle packing gaps；
2.3) piezoelectricity particle is filled in the border circular areas of the metal layer.
4. manufacturing method according to claim 1, it is characterised in that the drilling method of the step 4) is using deep
The method of erosion is punched.
5. manufacturing method according to claim 1, it is characterised in that the metal layer material be copper or aluminium, with a thickness of
50 microns.
6. manufacturing method according to claim 1, it is characterised in that in the step 2), polymer is BCB glue film, pressure
Electric particle is graphite particle.
7. production method according to claim 6, it is characterised in that the graphite particle diameter is less than 300 μm.
8. manufacturing method according to claim 1, it is characterised in that in the step 4), the aperture of punching is 50 micro-
Rice, silicon wafer thickness are 500 microns.
9. manufacturing method according to claim 1, it is characterised in that the technological parameter of the bonding steps is；When bonding
Between be 3min, bonding pressure be 0.1MPa, bonding temperature be 150 DEG C.
10. such as any one of the claim 1-9 preparation-obtained pressure and temperature sensor based on wafer bonding of method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810503373.9A CN108896104B (en) | 2018-05-23 | 2018-05-23 | Pressure and temperature sensor based on wafer bonding and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810503373.9A CN108896104B (en) | 2018-05-23 | 2018-05-23 | Pressure and temperature sensor based on wafer bonding and manufacturing method thereof |
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| CN108896104A true CN108896104A (en) | 2018-11-27 |
| CN108896104B CN108896104B (en) | 2020-11-10 |
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| CN201810503373.9A Expired - Fee Related CN108896104B (en) | 2018-05-23 | 2018-05-23 | Pressure and temperature sensor based on wafer bonding and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113776592A (en) * | 2021-09-10 | 2021-12-10 | 中国电子科技集团公司第四十八研究所 | Gas and pressure composite sensor and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103247570A (en) * | 2013-05-10 | 2013-08-14 | 华进半导体封装先导技术研发中心有限公司 | Manufacturing method for silicon through holes and silicon through hole interconnection |
| CN104617029A (en) * | 2015-01-07 | 2015-05-13 | 中国电子科技集团公司第五十五研究所 | Method for improving semiconductor wafer bonding alignment precision |
| EP3098836A1 (en) * | 2015-05-27 | 2016-11-30 | Honeywell International Inc. | Low temperature wafer bonding |
| CN106206930A (en) * | 2016-07-15 | 2016-12-07 | 中国电子科技集团公司第十三研究所 | Pressure transducer and preparation method thereof |
| CN206132279U (en) * | 2016-09-29 | 2017-04-26 | 苏州工业园区纳米产业技术研究院有限公司 | High temperature pressure sensor |
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2018
- 2018-05-23 CN CN201810503373.9A patent/CN108896104B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103247570A (en) * | 2013-05-10 | 2013-08-14 | 华进半导体封装先导技术研发中心有限公司 | Manufacturing method for silicon through holes and silicon through hole interconnection |
| CN104617029A (en) * | 2015-01-07 | 2015-05-13 | 中国电子科技集团公司第五十五研究所 | Method for improving semiconductor wafer bonding alignment precision |
| EP3098836A1 (en) * | 2015-05-27 | 2016-11-30 | Honeywell International Inc. | Low temperature wafer bonding |
| CN106206930A (en) * | 2016-07-15 | 2016-12-07 | 中国电子科技集团公司第十三研究所 | Pressure transducer and preparation method thereof |
| CN206132279U (en) * | 2016-09-29 | 2017-04-26 | 苏州工业园区纳米产业技术研究院有限公司 | High temperature pressure sensor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113776592A (en) * | 2021-09-10 | 2021-12-10 | 中国电子科技集团公司第四十八研究所 | Gas and pressure composite sensor and preparation method thereof |
| CN113776592B (en) * | 2021-09-10 | 2023-11-24 | 中国电子科技集团公司第四十八研究所 | Gas and pressure composite sensor and preparation method thereof |
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| CN108896104B (en) | 2020-11-10 |
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Granted publication date: 20201110 |