CN108878331A - A kind of mass semiconductor wet oxidation unit - Google Patents
A kind of mass semiconductor wet oxidation unit Download PDFInfo
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- CN108878331A CN108878331A CN201810947944.8A CN201810947944A CN108878331A CN 108878331 A CN108878331 A CN 108878331A CN 201810947944 A CN201810947944 A CN 201810947944A CN 108878331 A CN108878331 A CN 108878331A
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- reaction chamber
- wet oxidation
- heating device
- mounting rack
- oxidation unit
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 53
- 238000009279 wet oxidation reaction Methods 0.000 title claims abstract description 36
- 238000006243 chemical reaction Methods 0.000 claims abstract description 74
- 238000010438 heat treatment Methods 0.000 claims abstract description 47
- 238000003384 imaging method Methods 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims description 16
- 239000010453 quartz Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 claims description 5
- 125000004122 cyclic group Chemical group 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 21
- 238000000034 method Methods 0.000 abstract description 17
- 230000003647 oxidation Effects 0.000 abstract description 17
- 230000008569 process Effects 0.000 abstract description 15
- 239000013078 crystal Substances 0.000 abstract description 12
- 238000001816 cooling Methods 0.000 abstract description 5
- 238000005070 sampling Methods 0.000 abstract description 4
- 238000012544 monitoring process Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 26
- 235000012431 wafers Nutrition 0.000 description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 239000008236 heating water Substances 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- GOLCXWYRSKYTSP-UHFFFAOYSA-N Arsenious Acid Chemical compound O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000006213 oxygenation reaction Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
This application provides a kind of mass semiconductor wet oxidation units, it includes vibration-damped table, the turntable being arranged in vibration-damped table, the driving motor for driving turntable to rotate, the multiple reaction chambers being arranged on the turntable, mounting rack, the chamber heating device on mounting rack, the CCD imaging device on mounting rack being arranged in vibration-damped table, the chamber heating device can be moved up and down along the mounting rack, and the turntable is for being respectively moved to wet oxidation position for multiple reaction chambers under the driving of the driving motor.A kind of mass semiconductor wet oxidation unit of the application can carry out the placement of more semiconductor wafer, oxidation and cooling sampling process step by step, realize the accurate wet process oxidation technology under the high efficiency of semiconductor crystal wafer, mass, real time monitoring.
Description
Technical field
This application involves a kind of mass semiconductor wet oxidation units.
Background technique
In the prior art, part of compounds semiconductor devices needs to use wet process oxidation technology in the fabrication process,
Principle is to make semiconductor material and vapor that oxidation reaction occur at a certain temperature to generate oxidation material, to reach optimizer
The purpose of part performance.According to research (Ashby C I H, Bridges MM, the Allerman AA, et of Carol I. et al.
al.Origin of the time dependence of wet oxidation of AlGaAs[J].Applied
physics letters,1999,75(1):73-75.), AlAs is as the common material of compound semiconductor device, certain
At a temperature of can with vapor is anti-raw react generation aluminium oxide (Al2O3),
2AlAs+6H2O(g)→Al2O3+As2O3+6H2(g)
Such as in luminescent device, the material containing Al component is reacted with vapor at a certain temperature generates aluminium oxide
(Al2O3).Since aluminium oxide is a kind of insulating materials and refractive index lower than semiconductor materials such as GaAs and AlAs, limit can achieve
The purpose of electric field and light field in semiconductor laser processed.Since the material containing Al component is reacted with vapor to temperature and water
The concentration of steam is especially sensitive, and the small variation of temperature will change the rate of oxidation reaction, and the variation of concentration also results in oxygen
Change reaction rate change, such as containing Al component material oxidation reaction it is uneven or uncontrolled when, just will affect device
The final performance of part even makes component failure.
Existing wet oxidation device be usually in single cavity to 1 or several chip semiconductor wafers aoxidize it is anti-
It answers, it is difficult to mass wet process oxidation technology fast and efficiently be carried out to more semiconductor wafer.Existing wet oxidation furnace cannot
Accurately adjust the temperature of oxidation reaction and the concentration of gas, it is difficult to strictly control each material cell interior on a large scale
Oxidation rate and depth and its overall uniformity.
Summary of the invention
The application technical problems to be solved are to provide a kind of batch of accurate control more semiconductor material oxidation process
Change semiconductor wet oxidation unit.
In order to solve the above-mentioned technical problem, this application provides a kind of mass semiconductor wet oxidation unit, it includes
Vibration-damped table, the turntable being arranged in vibration-damped table, for drive turntable rotate driving motor, be arranged in it is more on the turntable
A reaction chamber, the mounting rack being arranged in vibration-damped table, the chamber heating device on mounting rack, on mounting rack
CCD imaging device, the chamber heating device can be moved up and down along the mounting rack, and the turntable is used for described
Driving motor driving under multiple reaction chambers are respectively moved to the position of chamber heating devices heat.
Preferably, the reaction chamber includes reaction chamber shell, upper cover, is arranged in the reaction chamber shell
Multilayer quartz holder, the multilayer quartz holder includes multiple cyclic annular object-putting layers being arranged along the vertical direction, described
Object-putting layer there are inwardly projecting multiple fulcrums, multiple fulcrums are along the circumferential uniformly arrangement of object-putting layer.
Preferably, the reaction chamber further includes air inlet pipe, escape pipe, the multiple air inlet branch being connected with air inlet pipe
Pipe, the gas outlet of multiple air intake branches respectively corresponds an object-putting layer.
Preferably, the air inlet pipe, escape pipe and air intake branch are made of quartz material.
Preferably, the bottom of the vibration-damped table is equipped with gas holder, water bath heating device and air valve, the heating water bath
The escape pipe of device and multiple reaction chambers passes through the pluggable connection of gas transmission pipeline respectively, and the air valve has first to connect
Logical state and the second connected state, when air valve is in the first connected state, gas holder is connected with reaction chamber, heating water bath dress
The airflow channel set between reaction chamber is closed；When air valve is in the second connected state, water bath heating device and reaction chamber
Room is connected, and the airflow channel between gas holder and reaction chamber is closed.
Preferably, the chamber heating device includes cylindric shell, is mounted on the inner wall of cylinder shell
Multiple heat-generating pipes, the chamber heating device is for covering outside reaction chamber and heating to reaction chamber.
Preferably, the heat-generating pipe is vertical quartz infrared heating pipe, circumferential direction of multiple heat-generating pipes along cylinder shell
It is uniformly distributed.
Preferably, it is provided with the sliding rail for vertically extending setting on the mounting rack, is arranged on the shell
There are the multiple directive wheels that can be slided up and down along sliding rail.
Preferably, first pulley, second pulley and coiling machine, the cylinder shell are also set up on the mounting rack
Outer wall on be provided with third pulley, the coiling machine is used for the one end of coiling traction rope, the traction rope successively around
First pulley and second pulley are crossed, the other end of the traction rope is fixed on third pulley, when coiling machine coiling and is released
When putting traction rope, traction rope pulls chamber heating device to slide up and down along sliding rail.
Preferably, a L-type support is additionally provided on the mounting rack, the L-type support includes respectively along X-axis and Y
Two slide bars that axis direction extends, CCD imaging device are mounted in the L-type support, and can be along two sliding bars.
By above technical solution, the beneficial effects of the present application are as follows：
1. a kind of mass semiconductor wet oxidation unit of the application has mechanical rotation device, (i.e. turntable and driving turns
The driving motor of disk rotation), the effect of mechanical rotation device is to realize reaction chamber between Sample Room, reaction chamber and sampling room
Rotation and switching, substep carry out the placement, oxidation and cooling sampling process of semiconductor crystal wafer, realize the efficient of semiconductor crystal wafer
Rate, mass wet process oxidation technology.
2. reaction chamber described in equably imports N by multiple air intake branches2/H2/H2O mixed reaction gas guarantees
N2/H2/H2O mixed gas is evenly distributed in each chip semiconductor crystal column surface, guarantees mixed reaction gas and semiconductor crystal wafer
(material) sufficiently and uniformly reacts.
3. the heat-generating pipe of chamber heating device described in is uniformly distributed along the circumferential direction of cylinder shell, is guaranteed in reaction chamber
Form highly stable uniform temperature field, the temperature uniformity of each chip semiconductor wafer.
4.CCD imaging device, according to Al ingredient in semiconductor material with H2O reacts to form Al2O3The change of front and back reflectivity
Change real-time and efficiently to detect wet oxidation process, to accurately judge that oxidation depth and determining that terminating wet oxidation program provides
Realtime graphic and data information.
Referring to following description and accompanying drawings, specific implementations of the present application are disclosed in detail, specify the original of the application
Reason can be in a manner of adopted.It should be understood that presently filed embodiment is not so limited in range.In appended power
In the range of the spirit and terms that benefit requires, presently filed embodiment includes many changes, modifications and is equal.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of multilayer quartz holder.
Fig. 2 is the structural schematic diagram of reaction chamber.
Fig. 3 is the structural schematic diagram that reaction chamber is located in chamber heating device.
Fig. 4 is the structural schematic diagram of chamber heating device and its mounting rack.
Fig. 5 is the structural schematic diagram of another angle of Fig. 4.
Fig. 6 is a kind of structural schematic diagram of mass semiconductor wet oxidation unit described herein.
Fig. 7 is the partial structure diagram of Fig. 6.
Wherein：1, vibration-damped table；11, turntable；
21, mounting rack；22, coiling machine；23, first pulley；24, traction rope；25, second pulley；26, sliding rail；27, L-type
Bracket；28, crossbeam；29, vertical frame；
3, CCD imaging device；
4, reaction chamber；41, reaction chamber shell；42, upper cover；43, air inlet pipe；44, air intake branch；45, escape pipe；
46, vertical bar；47, object-putting layer；471, fulcrum；
5, chamber heating device；51, third pulley；52, heat-generating pipe；53, directive wheel；54, the first notch；
6, water bath heating device；7, gas holder；8, gas feeding duct；9, gas outlet duct；10, air valve；100, the end PC.
Specific embodiment
Below in conjunction with the attached drawing in the application embodiment, the technical solution in the application embodiment is carried out clear
Chu is fully described by, it is clear that described embodiment is only a part of embodiment of the application, rather than whole realities
Apply mode.Based on the embodiment in the application, those of ordinary skill in the art institute without creative efforts
The every other embodiment obtained, shall fall in the protection scope of this application.
It should be noted that it can directly on the other element when element is referred to as " being set to " another element
Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it, which can be, is directly connected to
To another element or it may be simultaneously present centering elements.
Unless otherwise defined, all technical and scientific terms used herein and the technical field for belonging to the application
The normally understood meaning of technical staff is identical.The term used in the description of the present application is intended merely to description tool herein
The purpose of the embodiment of body, it is not intended that in limitation the application.
As illustrated in fig. 1 and 2, the reaction chamber 4 of the application include reaction chamber shell 41, upper cover 42, be arranged in it is described
Multilayer quartz holder in reaction chamber shell 41, the multilayer quartz holder include a vertical bar 46, arrange along the vertical direction
Multiple cricoid object-putting layers 47 on vertical bar 46 are set, and the object-putting layer 47 has inwardly projecting multiple fulcrums 471, more
Along the circumferential direction of object-putting layer 47, uniformly arrangement, the semiconductor crystal wafer being heated are placed on object-putting layer 47 a fulcrum 471.Described
Reaction chamber 4 further includes air inlet pipe 43, escape pipe 45, the multiple air intake branches 44 being connected with air inlet pipe 43, multiple air inlet branch
The gas outlet of pipe 44 respectively corresponds an object-putting layer 47 and is arranged, and air inlet pipe 43, escape pipe 45 and air intake branch 44 are quartz material
It is made.Multiple thermocouples that multiple each object-putting layers 47 respectively correspond setting are additionally provided on reaction chamber shell 41.Described
The working principle of reaction chamber 4 is equably to import N by multiple air intake branches 442/H2/H2O mixed reaction gas guarantees
N2/H2/H2O mixed gas is evenly distributed in each chip semiconductor crystal column surface.
As shown in Fig. 3,4 and 5, the chamber heating device 5 includes cylinder shell, is mounted on the interior of cylinder shell
Multiple heat-generating pipes 52 on wall, the heat-generating pipe 52 are vertical quartz infrared heating pipe 52,5 sets of the chamber heating device
It is heated outside reaction chamber 4, and to reaction chamber 4.Multiple heat-generating pipes 52 are uniformly distributed along the circumferential direction of cylinder shell, are guaranteed anti-
It answers and forms highly stable uniform temperature field, the temperature uniformity of each chip semiconductor wafer in chamber 4.The cylindrical shell
The first notch 54 for being respectively used to evacuation air intake branch 44 and escape pipe 45 that is additionally provided with that Open Side Down on the side wall of body and the
Two notches.
It is provided with a sliding rail 26 for vertically extending setting on the mounting rack 21, is provided on the shell
It can be along multiple directive wheels 53 that sliding rail 26 slides up and down.
A crossbeam 28 is also set up on the mounting rack 21, and vertical frame 29, the sliding rail are provided on the crossbeam 28
26 are also mounted on the crossbeam 28.It is provided with first pulley 23 on the mounting rack 21, is arranged in the vertical frame 29
There is second pulley 25, third pulley 51 is provided on the outer wall of the cylinder shell, is also set up on the mounting rack 21
There is a coiling machine 22, coiling machine 22 is used for the one end of coiling traction rope 24, and the traction rope 24 successively bypasses first pulley
23 and second pulley 25, the other end of the traction rope 24 be fixed on third pulley 51.When 22 coiling of coiling machine and release
When putting traction rope 24, traction rope 24 pulls chamber heating device 5 to move up and down along sliding rail 26.
A L-type support 27 is additionally provided on the mounting rack 21, the L-type support 27 includes respectively along X-axis and Y-axis
Two slide bars that direction extends are equipped with CCD imaging device 3 in the L-type support 27, and the CCD imaging device 3 can
Along two sliding bars.The LED light for the light source specific band (such as 600-1100nm) that CCD imaging device 3 uses, according to semiconductor
The diversity judgement oxidation rate and depth of (i.e. oxygenation level two sides) reflectivity before and after wet oxidation occur for material, observe in real time
Semiconductor samples wet oxidation reaction process in chamber.The CCD imaging device 3 of the application is based on semiconductor material (AlGaAs)
With H2O reaction generates Al2O3Front and back changes the spectral reflectivity of a certain wave band and detects this wet oxidation process, is accurate
Ground judges oxidation depth and determines that terminating wet oxidation program provides realtime graphic and data information.The observation of CCD imaging device 3
Picture is sent to the end PC 100.When oxidation depth reaches setting value, stopping is passed through vapor and is passed through high pure nitrogen, starts pair
Semiconductor samples cooling.
It as shown in Figures 6 and 7, is a kind of mass semiconductor wet oxidation unit of the application comprising vibration-damped table 1 is set
The turntable 11 in vibration-damped table 1 is set, multiple reaction chambers 4 are provided on the turntable 11, the mounting rack 21 is mounted on
In vibration-damped table 1, the bottom of the vibration-damped table 1 is equipped with gas holder 7, water bath heating device 6 and air valve 10.The vibration-damped table 1
Effect be reduce vibration, so that CCD imaging device 3 is accurately observed the wet oxidation process of the sample of micron order size.
The air valve 10 has the first connected state and the second connected state, when air valve 10 is in the first connected state,
Gas holder 7 is connected with reaction chamber 4, and the airflow channel between water bath heating device 6 and reaction chamber 4 is closed, and gas holder 7 passes through gas
Inert gas is delivered to reaction chamber 4 by body conveyance conduit 8；
When air valve 10 is in the second connected state, water bath heating device 6 is connected with reaction chamber 4, gas holder with react
Airflow channel between chamber 4 is closed, and inert gas passes through gas holder 7, into water bath heating device 6, after heating, indifferent gas
The vapor that body carries heating is passed through reaction chamber 4 by gas transmission pipeline 8.
Below by taking Fig. 6 as an example, the working principle of the semiconductor wet oxidation unit is elaborated, in Fig. 6, on turntable 11
It is provided with 3 reaction chambers 4, respectively the first reaction chamber, the second reaction chamber and third reaction chamber.3 reaction chambers
Rotating collar around turntable 11 is to uniform arrangement, and turntable 11 rotates in vibration-damped table 1 under the driving of a driving motor, vibration-damped table
1 be equipped with 3 gas transmission pipelines, 8,3 gas transmission pipelines 8 respectively with the pluggable company of the air inlet pipe of 3 reaction chambers 43
It connects.
The work step of the semiconductor wet oxidation unit：The semiconductor crystal wafer for carrying out wet oxidation is needed to put by multiple
It sets on the multilayer quartz holder of the first reaction chamber；Air valve 10 is adjusted to the first connected state, and inert gas passes through gas holder 7,
Then the distribution for passing through air valve 10 makes in the first reaction chamber into the first reaction chamber full of inert gas.Driving motor drives
Turn disk 11 rotates, and the first reaction chamber is made to be moved to the position that is heated of 5 downside of chamber heating device, and the release of coiling machine 22 is led
Messenger 24, chamber heating device 5 move down rear enclosure outside the first reaction chamber along sliding rail 26, after chamber heating device 5 is powered
First reaction chamber is heated.Air valve 10 is adjusted to the second connected state, and inert gas passes through gas holder 7, fills into heating water bath
6 are set, after heating, the vapor that inert gas carries heating is passed through the first reaction chamber, and the Al component in sample and water steam
The anti-raw reaction of gas generates Al2O3, escape pipe 45 that the indoor gas of chamber passes through is discharged outside chamber, passes through CCD imaging device 3 and observe
The observation picture of wet oxidation reaction process, CCD imaging device 3 is sent to the end PC 100, in the process, can be along L-type support 27
CCD imaging device 3 is adjusted, CCD imaging device 3 is adjusted and arrives best observation position.When oxidation depth reaches setting value, stop
It only is passed through vapor to the first reaction chamber, and is passed through high pure nitrogen, starts to cool down to semiconductor samples, 22 coiling of coiling machine is led
Messenger 24, chamber heating device 5 move upwardly off the first reaction chamber along sliding rail 26.
The semiconductor crystal wafer for carrying out wet oxidation will be needed to be placed on the multilayer quartz holder of the second reaction chamber, driven
Dynamic motor driven turntable 11 rotates, and so that the first reaction chamber is left heating location, while the second reaction chamber is moved to chamber
The heating location of 5 downside of heating device.It is passed through high pure nitrogen into the first reaction chamber, it, will after the first reaction chamber is cooling
The semiconductor crystal wafer that oxidation is completed takes out.Semiconductor in the second reaction chamber and third reaction chamber is sequentially completed by above-mentioned steps
The wet oxidation of wafer.
A kind of mass semiconductor wet oxidation unit of the application can carry out the placement of semiconductor crystal wafer, oxidation step by step
With cooling sampling process, high efficiency, the mass wet process oxidation technology of semiconductor crystal wafer are realized.
It should be noted that in the description of the present application, in the description of the present application, unless otherwise indicated, " multiples' "
It is meant that two or more.
Here the combination of element, ingredient, component or step is described using term "comprising" or " comprising " it is also contemplated that
Substantially the embodiment being made of these elements, ingredient, component or step.Here by using term " can with ", it is intended to illustrate
Described any attribute that " can with " includes all is optional.
It should be understood that above description is to illustrate rather than to be limited.By reading above-mentioned retouch
It states, many embodiments and many applications except provided example all will be aobvious and easy for a person skilled in the art
See.Therefore, the range of this introduction should not be determined referring to foregoing description, but should referring to preceding claims and this
The full scope of the equivalent that a little claims are possessed determines.For comprehensive purpose, all articles and with reference to including special
The disclosure of benefit application and bulletin is all by reference to being incorporated herein.Theme disclosed herein is omitted in preceding claims
Any aspect is not intended to abandon the body matter, also should not be considered as applicant the theme is not thought of as it is disclosed
Apply for a part of theme.
Claims (10)
1. a kind of mass semiconductor wet oxidation unit, which is characterized in that it include vibration-damped table, be arranged in vibration-damped table turn
Disk, the multiple reaction chambers being arranged on the turntable, is arranged in vibration-damped table the driving motor for driving turntable to rotate
Mounting rack, the chamber heating device on mounting rack, the CCD imaging device on mounting rack, the described chamber heating
Device can be moved up and down along the mounting rack, and the turntable is used under the driving of the driving motor will be multiple anti-
Chamber is answered to be respectively moved to the position of chamber heating devices heat.
2. a kind of mass semiconductor wet oxidation unit as described in claim 1, which is characterized in that the reaction chamber
Including reaction chamber shell, upper cover, the multilayer quartz holder being arranged in the reaction chamber shell, the multilayer quartz
Bracket includes multiple cyclic annular object-putting layers being arranged along the vertical direction, and the object-putting layer has inwardly projecting multiple
Point, multiple fulcrums are along the circumferential uniformly arrangement of object-putting layer.
3. a kind of mass semiconductor wet oxidation unit as claimed in claim 2, which is characterized in that the reaction chamber
It further include air inlet pipe, escape pipe, the multiple air intake branches being connected with air inlet pipe, the gas outlet of multiple air intake branches respectively corresponds
One object-putting layer.
4. a kind of mass semiconductor wet oxidation unit as claimed in claim 3, which is characterized in that the air inlet pipe,
Escape pipe and air intake branch are made of quartz material.
5. a kind of mass semiconductor wet oxidation unit as claimed in claim 3, which is characterized in that the vibration-damped table
Bottom is equipped with gas holder, water bath heating device and air valve,
The escape pipe of the water bath heating device and multiple reaction chambers passes through the pluggable connection of gas transmission pipeline respectively,
The air valve has the first connected state and the second connected state,
When air valve is in the first connected state, gas holder is connected with reaction chamber, between water bath heating device and reaction chamber
Airflow channel close；
When air valve is in the second connected state, water bath heating device is connected with reaction chamber, between gas holder and reaction chamber
Airflow channel close.
6. a kind of mass semiconductor wet oxidation unit as described in claim 1, which is characterized in that the chamber heating
Device includes cylindric shell, the multiple heat-generating pipes being mounted on the inner wall of cylinder shell, the chamber heating device
For covering outside reaction chamber and being heated to reaction chamber.
7. a kind of mass semiconductor wet oxidation unit as claimed in claim 6, which is characterized in that the heat-generating pipe is
Vertical quartz infrared heating pipe, multiple heat-generating pipes are uniformly distributed along the circumferential direction of cylinder shell.
8. a kind of mass semiconductor wet oxidation unit as claimed in claim 6, which is characterized in that on the mounting rack
It is provided with the sliding rail for vertically extending setting, the multiple guiding that can be slided up and down along sliding rail are provided on the shell
Wheel.
9. a kind of mass semiconductor wet oxidation unit as claimed in claim 8, which is characterized in that on the mounting rack
First pulley, second pulley and coiling machine are also set up, third pulley is provided on the outer wall of the cylinder shell, it is described
Coiling machine is used for the one end of coiling traction rope, and the traction rope successively bypasses first pulley and second pulley, and described leads
The other end of messenger is fixed on third pulley, and when coiling machine coiling and release traction rope, traction rope pulls chamber heating
Device is slided up and down along sliding rail.
10. a kind of mass semiconductor wet oxidation unit as claimed in claim 9, which is characterized in that the mounting rack
On be additionally provided with a L-type support, the L-type support includes two slide bars extended respectively along X-axis and Y direction, CCD imaging
Device is mounted in the L-type support, and can be along two sliding bars.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810947944.8A CN108878331B (en) | 2018-08-20 | 2018-08-20 | Batch semiconductor wet oxidation device |
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|---|---|---|---|
| CN201810947944.8A CN108878331B (en) | 2018-08-20 | 2018-08-20 | Batch semiconductor wet oxidation device |
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| CN108878331A true CN108878331A (en) | 2018-11-23 |
| CN108878331B CN108878331B (en) | 2024-05-31 |
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| CN201810947944.8A Active CN108878331B (en) | 2018-08-20 | 2018-08-20 | Batch semiconductor wet oxidation device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112864062A (en) * | 2020-12-31 | 2021-05-28 | 湖南三安半导体有限责任公司 | Silicon carbide etching tool |
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