CN108878265A - A method of growing mono-crystal gallium nitride film on Si (100) substrate - Google Patents

A method of growing mono-crystal gallium nitride film on Si (100) substrate Download PDF

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CN108878265A
CN108878265A CN201810714565.4A CN201810714565A CN108878265A CN 108878265 A CN108878265 A CN 108878265A CN 201810714565 A CN201810714565 A CN 201810714565A CN 108878265 A CN108878265 A CN 108878265A
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CN108878265B (en
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杨学林
沈波
冯玉霞
张智宏
刘开辉
张洁
许福军
王新强
唐宁
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Peking University
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
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Abstract

The invention discloses one kind to grow the method for mono-crystal gallium nitride film on Si (100) substrate, including：Amorphous SiO is formed on Si (100) substrate2Layer；Single crystal graphene is transferred to Si (100)/SiO2On substrate；Single crystal graphene surface is pre-processed, dangling bonds are generated；Growing AIN nucleating layer；Epitaxial growth GaN film.Since Si (100) surface reconstruction generates two kinds of dangling bonds, cause to be orientated inconsistent when nitride growth in crystal grain face and monocrystalline cannot be formed, the present invention is with amorphous SiO2Two kinds of suspension key informations of layer shielding substrate surface, and six side's templates as needed for graphene offer nitride epitaxial growth, extension have obtained the high-quality GaN monocrystal thin films of continuous uniform, have had laid a good foundation for GaN base device and the integration of Si base device.

Description

A method of growing mono-crystal gallium nitride film on Si (100) substrate
Technical field
The invention belongs to technical field of semiconductors, are related to one kind and grow mono-crystal gallium nitride film on Si (100) substrate Method.
Background technique
Using GaN as the third generation semiconductor material of representative, with forbidden bandwidth is big, breakdown field strength is high, saturated electrons The features such as drift velocity is big, thermal conductivity is high and Radiation hardness is strong can satisfy modern electronic technology to high temperature, high frequency, Gao Gong The requirement of the performances such as rate and Flouride-resistani acid phesphatase.Its white light and purple-light LED, short wavelength laser and ultraviolet detector etc., white The fields such as optical illumination, ultraviolet band sterilization, high-speed color laser printing and non-solar-blind band detection are widely applied；Its microwave power device Part makes the antenna of identical size possess farther distance and search capability because of high power density and the limit of working temperature；Its electric power Electronic device loss is lower, more efficient, plays section in the power generation of electric system, transmission of electricity, power transformation, distribution and scheduling links Efficiency is used, and power consumption is substantially reduced.
Due to the scarcity of homo-substrate, hetero-epitaxy becomes the main way of GaN material and device extension.In hetero-epitaxy In substrate, Si substrate has the advantages that size is big, at low cost and thermal conductivity is good, and GaN base device and module can be with existing Si The complementary metal oxide semiconductor preparation process of integrated circuit is mutually compatible with.GaN base device and Si base microelectronic component it is integrated Broader space will be provided for IC design and application, is the development trend of GaN material and device.But the integrated electricity of Si Si used in the industry of road (100) substrate can not grow monocrystalline GaN material.This is because Si (100) surface atom is quadruple Symmetrically, and surface reconstruction generates two kinds of dangling bonds, causes to be orientated in crystal grain face when nitride growth inconsistent.
Inconsistent problem is orientated when causing to grow GaN for Si (100) surface reconstruction in crystal grain face, is not had at present The solution of effect.In coverage, such as V.Lebedev, et al., J.Crystal Growth 230,426 (2001)； S.Joblot,et al.,J.Crystal Growth 280,44(2005)；F.Schulze,et al., Appl.Phys.Lett.87,133505 (2005), unique solution are to solve substrate using Si (100) substrate of beveling Surface reconstruction problem.But substrate miscut leads to the properties anisotropy such as carrier mobility in Si material, can not actually answer With to limit the integrated development of GaN base device and Si base device.
Summary of the invention
In order to overcome the above-mentioned deficiencies of the prior art, the present invention provides one kind grows monocrystalline nitrogen on Si (100) substrate The method for changing gallium film, first with amorphous SiO2Layer shielding substrate surface reconstruct caused by two kinds of suspension key informations, next with Six side's templates needed for transferable two-dimensional graphene provides nitride epitaxial growth, by carrying out surface preparation to graphene Dangling bonds, and depositing Al N nucleating layer are generated, to grow high-quality GaN monocrystal thin films.The present invention can be achieved on Si (100) substrate The growth of monocrystalline GaN film is had laid a good foundation for GaN base device and the integration of Si base device.
Technical scheme is as follows：
A method of it growing mono-crystal gallium nitride film on Si (100) substrate, includes the following steps：
Step 1：Amorphous SiO is formed on Si (100) substrate2Layer；
Step 2：Single crystal graphene is transferred to Si (100)/SiO that step 1 obtains2On substrate；
Step 3：Single crystal graphene surface is pre-processed, dangling bonds are generated；
Step 4：Growing AIN nucleating layer on single crystal graphene after the pre-treatment；
Step 5：The epitaxial growth GaN single crystal film on AlN nucleating layer.
Preferably, step 1 forms amorphous SiO2The method of layer is chemical vapour deposition technique or thermal oxidation method, SiO2Layer With a thickness of 50nm-1 μm.
Preferably, the number of plies of the single crystal graphene is 1-4 layers.Usually use metal organic chemical compound vapor deposition (MOVCD) or chemical vapor deposition (CVD) method growth single crystal graphene.
The preferred using plasma etching of step 3 or the method for nitrogen treatment pre-process single crystal graphene surface. Wherein, the gas for carrying out plasma etching to single crystal graphene surface is nitrogen, plasma power 50-500W, etching Time is 1-100min.The method for carrying out nitrogen treatment to single crystal graphene surface is NH3Etching, preferably in high-temperature hydrogen atmosphere Lower NH3Etching, etching temperature are 1000-1300 DEG C, NH3Flow is 100-8000sccm, etch period 1-100min.
The growing method of the AlN nucleating layer and GaN single crystal film is selected from metal organic chemical compound vapor deposition, molecular beam One of extension, hydride gas-phase epitaxy and chemical vapor deposition.
Preferably, using MOVCD method growing AIN nucleating layer, growth temperature is 800-1200 DEG C, growth pressure 10- 200mbar, V/III ratio be 150-1500, AlN nucleating layer with a thickness of 1-100nm.
Preferably, using MOVCD method epitaxial growth GaN single crystal film, growth temperature is 1000-1200 DEG C, growth pressure It is by force 10-200mbar, V/III ratio is 500-5000, and growth rate is 1 μm/h-5 μm/h.
The method that the present invention grows mono-crystal gallium nitride film on Si (100) substrate has the advantages that：
(1) by introducing amorphous SiO2Layer and single crystal graphene layer, effectively shield two caused by Si (100) surface reconstruction Kind suspension key information, and six side's templates are provided for the growth of nitride；
(2) by being pre-processed to graphene surface, dangling bonds is formed, provide nucleation for subsequent epitaxial nitride Point；
(3) close by depositing the nucleation that the AlN mutually compatible with extension GaN process improves graphene surface as nucleating layer Degree, provides nucleating point for extension GaN single crystal film.
Detailed description of the invention
Fig. 1 is the flow chart for growing mono-crystal gallium nitride film process on Si (100) substrate according to the present invention.
Fig. 2 is (002) face θ of XRD θ/2 scanning curve (A) and (102) for the GaN that the present invention is grown on Si (100) substrate FaceScanning curve (B).
Fig. 3 is the electron scanning micrograph for the GaN surface topography that the present invention is grown on Si (100) substrate.
Fig. 4 is the GaN surface topography atomic force microscope images that the present invention is grown on Si (100) substrate.
Specific embodiment
Illustrate to make the object, technical solutions and advantages of the present invention clearer, below in conjunction with two kinds of specific embodiments, and Referring to attached drawing, the present invention is described in more detail.The implementation for not being painted or describing in attached drawing is in the technical field Form known to a person of ordinary skill in the art.In addition, though can provide the demonstration of the parameter comprising particular value herein, it is to be understood that ginseng Number is equal to corresponding value without definite, but can be similar to be worth accordingly in acceptable error margin or design constraint.
Embodiment 1：
As shown in Figure 1, growing mono-crystal gallium nitride film on Si (100) substrate, include the following steps：
Step 1：Amorphous SiO is formed in Si (100) substrate thermal oxidation process2Layer, SiO2Layer with a thickness of 50nm-1 μm.
Step 2：Transfer graphene to Si (100)/SiO2On layer, shifted graphene is single crystal graphene, graphene The number of plies is 1-4 layers.
Step 3：Using plasma washing machine to being transferred to Si (100)/SiO2On graphene perform etching, etch gas Body is nitrogen, plasma power 50-500W, etch period 1-100min；
Step 4：Si(100)/SiO2Depositing Al N nucleating layer after/graphene is pre-processed, depositing temperature 800- 1200 DEG C, AlN nucleating layer with a thickness of 1-100nm；
Step 5：The epitaxial growth GaN film on AlN nucleating layer, growth temperature are 1000-1200 DEG C, and growth rate is 1 μ m/h-5μm/h。
Embodiment 2：
Step 1：Amorphous SiO is grown in Si (100) substrate plasma activated chemical vapour deposition (PECVD) method2Layer, SiO2Layer with a thickness of 50nm-1 μm.
Step 2：Transfer graphene to Si (100)/SiO2On layer, shifted graphene is single crystal graphene, graphene The number of plies is 1-4 layers.
Step 3：In Metal Organic Vapor epitaxial reactor, NH is used under high-temperature hydrogen atmosphere3To graphene Surface performs etching to form dangling bonds, NH under high-temperature hydrogen atmosphere3The temperature of etching is 1000-1300 DEG C, NH3Flow is 100- 8000sccm, etch period 1-100min；
Step 4：Si(100)/SiO2In-situ deposition AlN nucleating layer, depositing temperature are after/graphene is pre-processed 800-1200 DEG C, AlN nucleating layer with a thickness of 1-100nm；
Step 5：The epitaxial growth GaN film on AlN nucleating layer, growth temperature are 1000-1200 DEG C, and growth rate is 1 μ m/h-5μm/h。
(002) face θ of XRD θ/2 scanning curve of the GaN grown on Si (100) substrate by the above method and (102) faceScanning curve is as shown in Fig. 2, illustrate that GaN is monocrystalline on Si (100) substrate.The scanning of the GaN surface topography grown Electron micrograph and atomic force microscope images difference are as shown in Figure 3 and Figure 4, it can be seen that on Si (100) substrate GaN forms the film of continuous uniform, and GaN surface atom step appearance is obvious, and end of dislocation is less.
Above-described two kinds of specific embodiments, have carried out into one the purpose of the present invention, technical scheme and beneficial effects Step is described in detail, it should be understood that the above is only a specific embodiment of the present invention, and is not applied to limit this hair Bright, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should be included in the present invention Protection scope within.

Claims (10)

1. a kind of method for growing mono-crystal gallium nitride film on Si (100) substrate, includes the following steps：
1) amorphous SiO is formed on Si (100) substrate2Layer；
2) single crystal graphene is transferred to Si (100)/SiO that step 1) obtains2On substrate；
3) single crystal graphene surface is pre-processed, generates surface dangling bonds；
4) growing AIN nucleating layer on single crystal graphene after the pre-treatment；
5) the epitaxial growth GaN single crystal film on AlN nucleating layer.
2. the method as described in claim 1, which is characterized in that step 1) passes through chemical vapour deposition technique or thermal oxidation method shape At amorphous SiO2Layer, SiO2Layer with a thickness of 50nm-1 μm.
3. the method as described in claim 1, which is characterized in that the number of plies of the single crystal graphene of step 2) transfer is 1-4 layers.
4. the method as described in claim 1, which is characterized in that the method for step 3) using plasma etching or nitrogen treatment Single crystal graphene surface is pre-processed.
5. method as claimed in claim 4, which is characterized in that carry out the gas of plasma etching to single crystal graphene surface For nitrogen, plasma power 50-500W, etch period 1-100min.
6. method as claimed in claim 4, which is characterized in that the method for carrying out nitrogen treatment to single crystal graphene surface is NH3 Etching.
7. method as claimed in claim 6, which is characterized in that carry out NH to single crystal graphene surface under high-temperature hydrogen atmosphere3 Etching, etching temperature are 1000-1300 DEG C, NH3Flow is 100-8000sccm, etch period 1-100min.
8. the method as described in claim 1, which is characterized in that step 4) growing AIN nucleating layer and step 5) grow GaN single crystal The method of film is selected from metal organic chemical compound vapor deposition, molecular beam epitaxy, hydride gas-phase epitaxy and chemical vapor deposition One of.
9. the method as described in claim 1, which is characterized in that step 4) is raw using metal organic chemical compound vapor deposition method Long AlN nucleating layer, growth temperature be 800-1200 DEG C, growth pressure 10-200mbar, V/III ratio be 150-1500, AlN at Stratum nucleare with a thickness of 1-100nm.
10. the method as described in claim 1, which is characterized in that step 5) uses metal organic chemical compound vapor deposition method Epitaxial growth GaN single crystal film, growth temperature are 1000-1200 DEG C, and growth pressure 10-200mbar, V/III ratio is 500- 5000, growth rate is 1 μm/h-5 μm/h.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115050864A (en) * 2022-08-16 2022-09-13 北京大学 Preparation method of single crystal nitride Micro-LED array based on non-single crystal substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115050864A (en) * 2022-08-16 2022-09-13 北京大学 Preparation method of single crystal nitride Micro-LED array based on non-single crystal substrate
CN115050864B (en) * 2022-08-16 2022-11-25 北京大学 Preparation method of single crystal nitride Micro-LED array based on non-single crystal substrate

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