CN108877689A - Liquid crystal display panel and liquid crystal display with it - Google Patents
Liquid crystal display panel and liquid crystal display with it Download PDFInfo
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- CN108877689A CN108877689A CN201810583237.5A CN201810583237A CN108877689A CN 108877689 A CN108877689 A CN 108877689A CN 201810583237 A CN201810583237 A CN 201810583237A CN 108877689 A CN108877689 A CN 108877689A
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 74
- 238000005286 illumination Methods 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims description 45
- 239000004065 semiconductor Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 23
- 239000010408 film Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 230000013011 mating Effects 0.000 claims 1
- 239000002184 metal Substances 0.000 description 15
- 230000003287 optical effect Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 8
- 238000009413 insulation Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/3406—Control of illumination source
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Liquid Crystal (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
Abstract
A kind of liquid crystal display panel and the liquid crystal display with it, the liquid crystal display panel includes photosensitive unit, Master Control Unit, light source controller and backlight, the Master Control Unit is connected with the photosensitive unit and the light source controller, the light source controller is connected with the backlight, the photosensitive unit acquires extraneous illumination intensity information, the liquid crystal display panel further includes temperature-sensitive unit, the temperature-sensitive unit is connected with the Master Control Unit, the extraneous temperature information of the temperature-sensitive unit acquisition, the brightness that the Master Control Unit passes through backlight described in the light-source controller controls by the information that the temperature-sensitive unit and the photosensitive unit acquire.The backlight intensity that the liquid crystal display panel can correspond to conciliation liquid crystal display panel according to extraneous intensity of illumination and the temperature in the external world promotes the service performance of liquid crystal display panel to adjust the brightness of display panel.
Description
Technical field
The present invention relates to the technical fields of liquid crystal display, more particularly to a kind of liquid crystal display panel and have the liquid crystal
Show the liquid crystal display of panel.
Background technique
With the development of display technology, liquid crystal display panel (Liquid Crystal Display, LCD) because its is light,
The advantages that Low emissivity, is more and more welcomed by the people.Liquid crystal display panel includes the thin-film transistor array base-plate being oppositely arranged
With colored filter substrate and sandwiched liquid crystal layer therebetween.
People changes the brightness requirement of display panel as ambient light intensity changes, and needs when daylight environment light is stronger aobvious
Show that panel is brighter, and then the brightness of display panel can reduce at night or in dim room.
In the prior art, to achieve the above object, optical sensor, such as metal-semiconductor-metal can generally be passed through
The optical sensor of (Metal-Semiconductor-Metal, MSM) structure, to detect the intensity of ambient light photograph, and according to the external world
The intensity of intensity adjustment liquid crystal display panel itself light source of illumination, so that the intensity that the brightness of liquid crystal display and ambient light are shone
It is adapted.
Fig. 1 is the structural schematic diagram of the optical sensor of metal-semiconductor-metal (MSM), and Fig. 2 is that metal-is partly led
The light detection schematic illustration of the optical sensor of body-metal structure (MSM).As shown in Figures 1 and 2, metal-semiconductor-metal
The optical sensor of (Metal-Semiconductor-Metal, MSM) structure, may be implemented to convert optical signals to current signal.
As shown in Figures 1 and 2, on substrate 11 formed semiconductor layer 12, on semiconductor layer 12 deposition formed a pair of metal electrodes 13,
14, that is, form the optical sensor of metal-semiconductor-metal.In diagram, two metal electrodes 13,14 are interdigital shape.When
When the light of appropriate wavelength is incident to the optical sensor, the valence-band electrons of semiconductor layer 12 absorb photon energy and transit to conduction band
On, output photo-generate electron-hole is to (carrier) between conduction band and valence band.If applied on two metal electrodes 13,14
Bias, by drift motion or diffusion motion by metal electricity under electric field action of the photo-generated carrier between metal electrode 13,14
Pole 13,14 is captured, and is formed photogenerated current, is made to be connected between metal electrode 13,14.By detecting the size of the photogenerated current, i.e.,
It can be seen that the intensity of corresponding incident light.
It, can be with TFT (the Thin Film Transistor film crystal with amorphous silicon hydride according to above-mentioned principle
Pipe) device as optical sensor can sense ambient by the acquisition to electric current in the TFT device as optical sensor
Intensity, and change according to extraneous intensity of illumination the intensity of illumination of liquid crystal display panel itself light source, so that liquid crystal display
The brightness of device and extraneous intensity of illumination are adapted.
However, the threshold voltage of TFT device can drift about with the difference of operating temperature, this makes electric current in TFT
Intensity and the corresponding relationship of intensity of illumination can change with the difference of operating temperature, this makes automatic sensitive technologies simultaneously
The light that liquid crystal mesogens display panel cannot be accurately adjusted according to extraneous intensity of illumination, reduces making for liquid crystal display panel
Use performance.
Summary of the invention
The purpose of the present invention is to provide liquid crystal display panel and with the display of the liquid crystal display panel, the liquid crystal
Show that panel can correspond to the backlight intensity for reconciling liquid crystal display panel according to extraneous intensity of illumination and the temperature in the external world, to adjust
The brightness for saving display panel, promotes the service performance of liquid crystal display panel.
The embodiment of the present invention provides a kind of liquid crystal display panel, including photosensitive unit, Master Control Unit, light source controller and back
Light source, the Master Control Unit are connected with the photosensitive unit and the light source controller, the light source controller and the backlight
Source is connected, and the photosensitive unit acquires extraneous illumination intensity information, and the liquid crystal display panel further includes temperature-sensitive unit, the sense
Warm unit is connected with the Master Control Unit, and the extraneous temperature information of the temperature-sensitive unit acquisition, the Master Control Unit passes through described
The brightness that temperature-sensitive unit and the information of photosensitive unit acquisition pass through backlight described in the light-source controller controls.
Further, the liquid crystal display panel includes thin-film transistor array base-plate, the thin film transistor (TFT) array base
Plate includes substrate layer and the scan line being formed on substrate layer and data line, is also formed on the thin-film transistor array base-plate
Thin film transistor (TFT) and the photosensitive unit, the thin film transistor (TFT) include first grid, the first semiconductor, the first source electrode and first
Drain electrode, the first grid is connected with the scan line, and first source electrode and described first drains and is spaced apart from each other and and institute
The first semiconductor contact is stated, first source electrode is connected with the data line, and first drain electrode is connected with pixel electrode, described
Photosensitive unit includes second grid, the second semiconductor, the second source electrode and the second drain electrode, and second source electrode and described second drains
Be spaced apart from each other and with second semiconductor contact.
Further, the temperature-sensitive unit is formed on the thin film transistor (TFT), the temperature-sensitive unit include third grid,
Third semiconductor, third source electrode and third drain electrode, the third source electrode and third drain electrode are spaced apart from each other and with described the
Three semiconductor contacts.
Further, the first signal input line, the first current feedback line and the second electric current are also formed on the substrate layer
First signal input line described in feedback line, second source electrode and the third source electrode local is connected, second drain electrode and institute
It states the first current feedback line to be connected, the third drain electrode is connected with the second current feedback line.
Further, it is anti-that the first signal input line, second signal input line, the first electric current are also formed on the substrate layer
Feeder line and second signal feedback line, second source electrode are connected with first signal input line, second source electrode with it is described
Second signal input line is connected, and second drain electrode is connected with the first current feedback line, and the third drains and described the
Two current feedback lines are connected.
Further, the scan line and the data line, which intersect, limits multiple sub-pixels, the temperature-sensitive unit, the sense
Light unit and the thin film transistor (TFT) are both formed in the sub-pixel.
Further, the liquid crystal display panel further includes colored filter substrate, on the colored filter substrate
Relative to light shield layer is provided at the thin film transistor (TFT) and the temperature-sensitive unit, in the thin film transistor (TFT) relative to the sense
Light shield layer is not provided at light unit.
Further, the liquid crystal display panel includes display area and non-display area, the photosensitive unit and described
Temperature-sensitive unit is set to the non-display area, the non-display area is provided with cover board, relative to institute on the cover board
It states and offers opening at photosensitive unit.
Further, the temperature-sensitive unit is temperature-sensitive sticker, and the temperature-sensitive sticker is connected with the Master Control Unit.
The present invention also provides a kind of liquid crystal displays, including above-mentioned liquid crystal display panel.
In conclusion setting of the present invention by temperature-sensitive unit and photosensitive unit, can make Master Control Unit according to the external world
Temperature and intensity of illumination eliminate the variation pair of temperature to control the brightness of itself backlight to adapt to extraneous intensity of illumination
The interference of photosensitive unit more accurately can shine intensity adjustment self brightness according to ambient light, improve making for liquid crystal display panel
Use performance.Further, by third source electrode, third drain electrode and the setting of third semiconductor, and third is mapped to the external world and is partly led
Light on body is stopped, and the acquisition of leakage current, the preferably temperature of reflecting liquid crystal display panel can be passed through；Further
It ground can be according to the processing procedure of thin film transistor (TFT), by thin film transistor (TFT), temperature-sensitive unit and photosensitive unit during entire processing procedure
It is collectively formed on thin-film transistor array base-plate, this undoubtedly reduces processing procedure, significantly reduces cost.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the optical sensor of metal-semiconductor-metal (MSM).
Fig. 2 is the light detection schematic illustration of the optical sensor of metal-semiconductor-metal (MSM).
Fig. 3 is the system block diagram of each module of liquid crystal display panel in the embodiment of the present invention.
The planar structure of thin-film transistor array base-plate in the liquid crystal display panel that Fig. 4 provides for first embodiment of the invention
Schematic diagram.
Fig. 5 is the diagrammatic cross-section in Fig. 3 along thin film transistor (TFT) position.
Fig. 6 is the diagrammatic cross-section in Fig. 3 along temperature-sensitive unit position.
Fig. 7 is the diagrammatic cross-section in Fig. 3 along photosensitive unit position.
Fig. 8 is the planar structure schematic diagram for the thin-film transistor array base-plate that second embodiment of the invention provides.
Specific embodiment
It is of the invention to reach the technical approach and effect that predetermined goal of the invention is taken further to illustrate, below in conjunction with
Accompanying drawings and embodiments, to a specific embodiment of the invention, structure, feature and its effect, detailed description is as follows.
The purpose of the present invention is to provide liquid crystal display panel and with the display of the liquid crystal display panel, the liquid crystal
Show that panel can correspond to the backlight intensity for reconciling liquid crystal display panel according to extraneous intensity of illumination and the temperature in the external world, to adjust
The brightness for saving display panel, promotes the service performance of liquid crystal display panel.
Fig. 3 is the system block diagram of each module of liquid crystal display panel in the embodiment of the present invention, as shown in figure 3, the present invention provides
Liquid crystal display panel include photosensitive unit 22, temperature-sensitive unit 23, Master Control Unit 50, light source controller 60 and backlight 70, always
Control unit 50 is connected with temperature-sensitive unit 23, photosensitive unit 22 and light source controller 60, and light source controller 60 is connected with backlight 70,
Photosensitive unit 22 acquires extraneous illumination intensity information, and temperature-sensitive unit 23 acquires ambient temperature information, and Master Control Unit 50 passes through photosensitive
The information that unit 22 and temperature-sensitive unit 23 acquire controls the brightness of backlight 70 by light source controller 60.
In the present invention, by the setting of photosensitive unit 22 and temperature-sensitive unit 23, Master Control Unit 50 can be made according to the external world
Temperature exclude interference of the temperature factor to photosensitive unit 22, the sensing value of photosensitive unit 22 is modified, and according to amendment
Intensity of illumination afterwards is adjusted the brightness of backlight 70, this can exclude influence of the temperature for TFT threshold voltage, can
Intensity adjustment self brightness is more accurately shone according to ambient light, improves the service performance of liquid crystal display panel.
The planar structure of thin-film transistor array base-plate in the liquid crystal display panel that Fig. 4 provides for first embodiment of the invention
Schematic diagram, Fig. 5 are the diagrammatic cross-section in Fig. 3 along thin film transistor (TFT) position, and Fig. 6 is in place along temperature-sensitive unit institute in Fig. 3
The diagrammatic cross-section set, Fig. 7 are the diagrammatic cross-section in Fig. 3 along photosensitive unit position.Wherein in order to indicate clear, these
The technique of painting that omission is taken in figure, eliminates incoherent film layer, and Fig. 5 to Fig. 7 further illustrates the portion on colored filter substrate
Divide dependency structure, as shown in Figures 4 to 7, liquid crystal display panel provided by the invention includes 21 array substrate 20 of thin film transistor (TFT)
With colored filter substrate 40, and the liquid crystal between 21 array substrate 20 of thin film transistor (TFT) and colored filter substrate 40
Layer (not shown).
In the first embodiment of the present invention, thin-film transistor array base-plate 20 includes substrate layer 24, on substrate layer 24
It is formed with scan line 25, first grid 211, second grid 221 and third grid 231, first grid 211 is connected with scan line 25
(this is connected it can be appreciated that first grid 211 is a part of scan line 25).In scan line 25, first grid 211, second
Gate insulation layer 26 is covered on grid 221 and third grid 231.
The first semiconductor 212, the second semiconductor 222, third semiconductor 232, data line are formed on gate insulation layer 26
27, the first source electrode 213, the second source electrode 223,214, second drain electrode 224 of the drain electrode of third source electrode 233, first, third drain electrode 234, the
One signal input line 31, the first current feedback line 32 and the second current feedback line 33.
Wherein, scan line 25 and data line 27 intersect to limit multiple sub-pixel SP (sub-pixel), first grid 211,
First semiconductor 212, the first source electrode 213 and the first drain electrode 214 form (the TFT Thin Film of thin film transistor (TFT) 21
Transistor), thin film transistor (TFT) 21 is formed in each sub-pixel SP, and is located at scan line 25 and data line 27 and is intersected place
Position attachment.Pixel electrode 28 is also formed in each sub-pixel SP, the first source electrode 213 and the first drain electrode 214 are each other
Every and contacted with the first semiconductor 212, the first source electrode 213 is connected with data line 27, the first drain electrode 214 and 28 phase of pixel electrode
Even.
Second source electrode 223 and 224 interval of the second drain electrode are arranged and contact with the second semiconductor 222, the second source electrode 223,
Photosensitive unit 22 is formed between second drain electrode 224 and the second semiconductor 222.In the present embodiment, photosensitive unit 22 is set to often
In a sub-pixel SP.Further, in the present embodiment, the thin film transistor (TFT) 21 and photosensitive unit in each sub-pixel SP
22 arrange in diagonal line, in favor of saving space.Second source electrode 223 is connected with the first signal input line 31, second drain electrode 224 with
First current feedback line 32 is connected.In order to preferably acquire the electric current of drain electrode in photosensitive unit 22, photosensitive unit 22 can
In the state of being in OFF state always, second grid 221 can not be connected with scan line 25, the light only issued to backlight 70
Stopped.
Third source electrode 233 and 234 interval of third drain electrode are arranged and contact with third semiconductor 232, third source electrode 233,
Temperature-sensitive unit 23 is formed between third drain electrode 234 and third semiconductor 232.In the present embodiment, temperature-sensitive unit 23 is equally arranged
In in each sub-pixel SP, thin film transistor (TFT) 21 and temperature-sensitive unit 23 in each sub-pixel SP are arranged in diagonal line, sense
Warm unit 23 laying adjacent with photosensitive unit 22, so that temperature-sensitive unit 23 can more accurately sense the work temperature of photosensitive unit 22
Degree.Third source electrode 233 is connected with the first signal input line 31, and third drain electrode 234 is connected with the second current feedback line 33.In order to
Enough electric currents for preferably acquiring drain electrode in photosensitive unit 22, temperature-sensitive unit 23 can be always in the state of OFF state, third
Grid 231 can not be connected with scan line 25, and the light only issued to backlight 70 stops.
That is, in the present embodiment, temperature-sensitive unit 23 and the public same signal input line of photosensitive unit 22, but have each
From current feedback line.It is to be appreciated that in other embodiments, temperature-sensitive unit 23 and photosensitive unit 22 also can have respectively
Signal input line, namely second signal input line is also formed on gate insulation layer 26, the second source electrode 223 and the first signal are defeated
Enter line to be connected, third source electrode 233 is connected with second signal input line.
In the present embodiment, scan line 25, first grid 211, second grid 221 and third grid 231 are located on the same floor
In and can be formed via the patterned production of same metal layer.Gate insulation layer 26 cover scan line 25,211 line of first grid,
231 line of 221 line of second grid and third grid.Data line 27, the first source electrode 213, the second source electrode 223, third source electrode 233,
One the 214, second drain electrode 224 of drain electrode, the 234, first signal input line 31 of third drain electrode, the first current feedback line 32 and the second electric current
During feedback line 33 is located on the same floor, and it can be formed by the patterned production of same metal layer.
Further, in the present embodiment, thin-film transistor array base-plate 20 further includes passivation layer 29, the covering of passivation layer 29
Gate insulation layer 26, data line 27, the first source electrode 213, the second source electrode 223,214, second drain electrode of the drain electrode of third source electrode 233, first
224, the 234, first signal input line 31 of third drain electrode, the first current feedback line 32 and the second current feedback line 33, passivation layer 29
212 (the i.e. ditch of thin film transistor (TFT) 21 of the first semiconductor also exposed between the first source electrode of covering 213 and the first drain electrode 214 simultaneously
Road area), the second semiconductor 222 (i.e. the channel region of photosensitive unit 22) for exposing between the second source electrode 223 and the second drain electrode 224,
And the third semiconductor 232 (i.e. the channel region of temperature-sensitive unit 23) exposed between third source electrode 233 and third drain electrode 234.Picture
Plain electrode 28 is formed on passivation layer 29, is corresponded at the position of the first drain electrode 214 in passivation layer 29 and is provided with through-hole 291, as
Plain electrode 28 is connected by through-hole 291 with the first drain electrode 214.
As shown in Figures 5 to 7, the colored filter of three color of light shield layer 41 and red, green, blue is formed on colored filter substrate 40
Light film 43, light shield layer 41 is covered on the position at 23 place of thin film transistor (TFT) 21 and temperature-sensitive unit, but does not cover photosensitive unit
The corresponding position of 22 channel region, that is, the light shield layer 41 above the channel region for corresponding to each photosensitive unit 22 is moved
Except forming jagged 42, and due to the presence of second grid 221, the light that the backlight 70 of liquid crystal display panel can be stopped to issue
Line exposes to photosensitive unit 22, and therefore, photosensitive unit 22 only will receive the irradiation of ambient；Due to corresponding to temperature-sensitive unit 23
The position of channel region still covered by light shield layer 41, while the light that backlight 70 issues is stopped by third grid 231, so
The channel region of temperature-sensitive unit 23 not will receive the irradiation of light.
As shown in figure 4, in the present embodiment, a temperature-sensitive unit 23 and photosensitive unit are added in normal sub-pixel SP
22, it is integrated in temperature-sensitive unit 23 and photosensitive unit 22 on 21 array of thin film transistor (TFT), since temperature-sensitive unit 23 not will receive outside
The irradiation of boundary's light, collected leakage current only will receive the influence of temperature, therefore, pass through leakage current in temperature-sensitive unit 23
Acquisition, the temperature of available liquid crystal display panel.Due to photosensitive unit 22 can by the irradiation of external light source, lead to
The acquisition for crossing 22 leakage current of photosensitive unit can be derived that extraneous intensity of illumination.Master Control Unit 50 according to temperature and intensity of illumination,
Influence of the temperature for TFT threshold voltage can be excluded, the brightness of backlight 70 can be more accurately adjusted, so that liquid crystal display
The brightness of panel and ambient light are adapted.
Further, by the way that temperature-sensitive unit 23 and photosensitive unit 22 to be formed in same processing procedure with thin film transistor (TFT) 21
On 21 array of thin film transistor (TFT), processing procedure, save the cost can also be largely saved.
Fig. 8 is the planar structure schematic diagram for the thin-film transistor array base-plate that second embodiment of the invention provides, such as Fig. 8 institute
Show, the difference of thin-film transistor array base-plate 20 and first embodiment of the invention that second embodiment of the invention provides exists
In, display area 81 and non-display area 82 are formed on liquid crystal display panel, above-mentioned sub-pixel SP is located in display area 81,
In the present embodiment, in order to avoid temperature-sensitive unit 23 and photosensitive unit 22 impact the display of liquid crystal display panel, temperature-sensitive
Unit 23 and photosensitive unit 22 are all set in non-display area 82, are covered in the non-display area 82 of liquid crystal display panel
Plate (not shown) offers opening relative to the position where photosensitive unit 22 on the cover board, and ambient can be from opening
It is irradiated on photosensitive unit 22, and is not provided with being open relative to temperature-sensitive region on the cover board, cover board stops ambient to be irradiated to
On temperature-sensitive unit 23.
In the third embodiment of the present invention, temperature-sensitive unit 23 can directly be temperature-sensitive sticker, temperature-sensitive sticker and total
It controls unit 50 to be connected, the temperature signal sensed is transferred in Master Control Unit 50, without passing through the acquisition of leakage current again
To judge the temperature of environment.
In conclusion setting of the present invention by temperature-sensitive unit and photosensitive unit, can make Master Control Unit according to the external world
Temperature and intensity of illumination eliminate the variation pair of temperature to control the brightness of itself backlight to adapt to extraneous intensity of illumination
The interference of photosensitive unit more accurately can shine intensity adjustment self brightness according to ambient light, improve making for liquid crystal display panel
Use performance.Further, by third source electrode, third drain electrode and the setting of third semiconductor, and third is mapped to the external world and is partly led
Light on body is stopped, and the acquisition of leakage current, the preferably temperature of reflecting liquid crystal display panel can be passed through；Further
It ground can be according to the processing procedure of thin film transistor (TFT), by thin film transistor (TFT), temperature-sensitive unit and photosensitive unit during entire processing procedure
It is collectively formed on thin-film transistor array base-plate, this undoubtedly reduces processing procedure, significantly reduces cost.
The above described is only a preferred embodiment of the present invention, be not intended to limit the present invention in any form, though
So the present invention has been disclosed as a preferred embodiment, and however, it is not intended to limit the invention, any technology people for being familiar with this profession
Member, without departing from the scope of the present invention, when the technology contents using the disclosure above make a little change or modification
It is right according to the technical essence of the invention for the equivalent embodiment of equivalent variations, but without departing from the technical solutions of the present invention
Any simple modification, equivalent change and modification made by above embodiments, all of which are still within the scope of the technical scheme of the invention.
Claims (10)
1. a kind of liquid crystal display panel, including photosensitive unit, Master Control Unit, light source controller and backlight, the Master Control Unit
It is connected with the photosensitive unit and the light source controller, the light source controller is connected with the backlight, the photosensitive list
Member acquires extraneous illumination intensity information, it is characterised in that：The liquid crystal display panel further includes temperature-sensitive unit, the temperature-sensitive unit
It is connected with the Master Control Unit, the extraneous temperature information of the temperature-sensitive unit acquisition, the Master Control Unit passes through the temperature-sensitive list
The brightness that the information of the first and described photosensitive unit acquisition passes through backlight described in the light-source controller controls.
2. liquid crystal display panel according to claim 1, it is characterised in that：The liquid crystal display panel includes film crystal
Pipe array substrate, the thin-film transistor array base-plate include substrate layer and the scan line being formed on substrate layer and data line,
It is also formed with thin film transistor (TFT) and the photosensitive unit on the thin-film transistor array base-plate, the thin film transistor (TFT) includes the
One grid, the first semiconductor, the first source electrode and the first drain electrode, the first grid are connected with the scan line, first source
Pole and it is described first drain electrode be spaced apart from each other and with first semiconductor contact, first source electrode and the data line phase
Even, it is described first drain electrode is connected with pixel electrode, the photosensitive unit include second grid, the second semiconductor, the second source electrode and
Second drain electrode, second source electrode and it is described second drain electrode be spaced apart from each other and with second semiconductor contact.
3. liquid crystal display panel according to claim 2, it is characterised in that：It is brilliant that the temperature-sensitive unit is formed in the film
On body pipe, the temperature-sensitive unit include third grid, third semiconductor, third source electrode and third drain electrode, the third source electrode and
Third drain electrode be spaced apart from each other and with the third semiconductor contact.
4. liquid crystal display panel according to claim 3, it is characterised in that：The first signal is also formed on the substrate layer
First described in input line, the first current feedback line and the second current feedback line, second source electrode and the third source electrode local
Signal input line is connected, and second drain electrode is connected with the first current feedback line, the third drain electrode and second electricity
Feedback line is flowed to be connected.
5. liquid crystal display panel according to claim 3, it is characterised in that：The first signal is also formed on the substrate layer
Input line, second signal input line, the first current feedback line and second signal feedback line, second source electrode and first letter
Number input line is connected, and second source electrode is connected with the second signal input line, and described second drains and first electric current
Feedback line is connected, and the third drain electrode is connected with the second current feedback line.
6. liquid crystal display panel according to claim 4 or 5, it is characterised in that：The scan line and the data line are handed over
Fork limits multiple sub-pixels, and the temperature-sensitive unit, the photosensitive unit and the thin film transistor (TFT) are both formed in the sub-pixel
It is interior.
7. liquid crystal display panel according to claim 6, it is characterised in that：The liquid crystal display panel further includes colored filter
Mating plate substrate, relative to being provided with shading at the thin film transistor (TFT) and the temperature-sensitive unit on the colored filter substrate
Layer, in the thin film transistor (TFT) relative to being not provided with light shield layer at the photosensitive unit.
8. liquid crystal display panel according to claim 4 or 5, it is characterised in that：The liquid crystal display panel includes display
Region and non-display area, the photosensitive unit and the temperature-sensitive unit are set to the non-display area, described non-display
Region is provided with cover board, relative to offering opening at the photosensitive unit on the cover board.
9. liquid crystal display panel according to claim 2, it is characterised in that：The temperature-sensitive unit is temperature-sensitive sticker, institute
Temperature-sensitive sticker is stated to be connected with the Master Control Unit.
10. a kind of liquid crystal display, it is characterised in that：Including LCD display described in any one of claim 1 to 9
Plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810583237.5A CN108877689A (en) | 2018-06-05 | 2018-06-05 | Liquid crystal display panel and liquid crystal display with it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810583237.5A CN108877689A (en) | 2018-06-05 | 2018-06-05 | Liquid crystal display panel and liquid crystal display with it |
Publications (1)
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| CN113968185A (en) * | 2021-11-29 | 2022-01-25 | 北京京东方技术开发有限公司 | Rearview mirror, anti-dazzle method of rearview mirror and vehicle |
| CN114582294A (en) * | 2020-11-30 | 2022-06-03 | 京东方科技集团股份有限公司 | Display device and medical equipment |
| CN117809577A (en) * | 2023-12-26 | 2024-04-02 | 深圳创维显示技术有限公司 | Liquid crystal display device and control method thereof |
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