CN108872267A - A kind of plasma complex dielectric permittivity transient state Microwave reflection measurement method and device - Google Patents
A kind of plasma complex dielectric permittivity transient state Microwave reflection measurement method and device Download PDFInfo
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Abstract
The invention belongs to plasma diagnostics technical fields, it is related to Microwave Measurement Technique, a kind of plasma complex dielectric permittivity transient state Microwave reflection measurement method and device is specifically provided, measuring device of the present invention is based on shock tube experiment platform, its measurement method handles received reflection signal to obtain the true reflection coefficient of shock wave tube wall surface by calibration and cancellation techniques, removes the influence of test macro itself reflection signal；Recycle obtained shock wave tube wall surface reflection coefficient is counter to push away plasma complex dielectric permittivity variation in shock tube；Simultaneously, for the anti-function for pushing away plasma complex dielectric permittivity of shock wave tube wall reflection coefficient, there are ambiguities, the present invention solves the problems, such as this using the approximation of plasma complex dielectric permittivity linear change in a short time, to effectively realize plasma complex dielectric permittivity instantaneous measurement.
Description
Technical field
The invention belongs to plasma diagnostics technical fields, are related to Microwave Measurement Technique, specifically provide a kind of based on shock tube
The plasma complex dielectric permittivity transient state Microwave reflection measurement method and device of experiment porch.
Background technique
Plasma is mainly electric by charged ion and freely as the 4th state of substance for being different from solid, liquids and gases
Son is constituted, it appear that the labile state of height excitation, therefore be difficult persistently to exist in the natural environment.Artificial generation plasma
There are many kinds of the modes of body, shock tube as it is a kind of applied to experimental study generation high-density plasma equipment, wait from
Daughter can only generate inside it and there are the times to last only for about several hundred a microseconds, although Langmuir probe diagnostic method by
Applied to measurement plasma electron density and collision frequency, but since the characteristics of its invasive approach will affect plasma in pipe
The Density Distribution of body leads to test error, thus applied microwave diagnostic method plasma electron density and collision frequency into
Row non-cpntact measurement has better application prospect.Microwave diagnostics method can be divided into transmission and method for reflection, transmission method benefit again
Plasma electron density and collision frequency are pushed away come counter by the variation of plasma amplitude-phase with electromagnetic wave, due to high density
Plasma is very big to the decaying of electromagnetic wave even to occur signal cut off phenomenon, therefore the plasma density test of transmission method
It is very high that range receives the requirement of signal dynamics test scope to system hardware；In contrast, reflection side rule using electromagnetic wave with etc.
The back wave that gas ions interaction generates changes to analyze plasma electron density and collision frequency, since there is no signal
Cut off phenomenon, and the influence that plasma changes reflected signal amplitude is relatively small, therefore method for reflection connects system hardware
It is lower by the requirement of signal dynamic testing range, there is stronger applicability.Due to the electron density and collision frequency of plasma
There is one-to-one equivalence relation with its equivalent complex dielectric permittivity, be based on this, the present invention provides a kind of based on shock tube experiment
The plasma complex dielectric permittivity transient state Microwave reflection measurement method and device of platform.
Summary of the invention
The purpose of the present invention is to provide a kind of, and the plasma complex dielectric permittivity transient state based on shock tube experiment platform is micro-
Wave reflection measurement method and device are handled to obtain shock wave tube wall table by calibration and cancellation techniques to received reflection signal
The true reflection coefficient in face removes the influence of test macro itself reflection signal；Recycle obtained shock wave tube wall surface reflection
Coefficient is counter to push away plasma complex dielectric permittivity variation in shock tube；Meanwhile plasma is pushed away for shock wave tube wall reflection coefficient is counter
For the function of complex dielectric permittivity there are ambiguity, the present invention utilizes plasma complex dielectric permittivity linear change in a short time
Approximation solve the problems, such as this, thus realize comprising hardware testing operation and the complete test method of software calculation processing.
To achieve the above object, the technical solution adopted by the present invention is：
A kind of plasma complex dielectric permittivity transient state Microwave reflection measurement device, including signal source, offset extension set, receive
Machine, industrial personal computer, lens, electromagnetic horn, shock tube and two microwave dark rooms；It is characterized in that, the electromagnetic horn is set with lens
It is placed in the first microwave dark room, the signal source output signal is described micro- by offseting extension set excitation electromagnetic horn transmitting microwave
Wave is by lensing in plasma in shock tube；The plasma part transmission, part are reflected, and the transmitted wave enters
Second microwave dark room is simultaneously absorbed；The back wave, which returns to be received and passed through by electromagnetic horn along original route, offsets extension set arrival
Receiver, the industrial personal computer measure receiver signal and data processing and export plasma complex dielectric permittivity.
Above-mentioned plasma complex dielectric permittivity transient state Microwave reflection measurement method, which is characterized in that include the following steps：
Step 1：Opening signal source blocks the window of the first microwave dark room using absorbing material, and adjusting offsets extension set
Attenuator phase shifter makes the reception signal of receiver tend to noise, measures and records and receives signal at this time, is denoted as E1*；
Step 2：It keeps signal source and to offset extension set state constant, take down absorbing material, carry out plasma transient experiment
And record receiver and receive signal, obtain discrete reception signal data：
Data=[data (1), data (2), data (3) ..., data (T)]
Wherein, T is total number of sample points：T=M × N, N are sampling number in the default single treatment period, and M is at single
Manage the quantity of period；
Step 3：Above-mentioned discrete reception signal is calibrated, the reflection coefficient Γ of shock wave tube wall is obtained1(n)：
Step 4：Reflection coefficient Γ based on shock wave tube wall1(n), plasma complex dielectric permittivity is calculated：
According to the reflection coefficient Γ of shock wave tube wall1(n) objective function is constructed：
M=1,2,3 ..., M
Wherein, a is plasma dielectric constant initial value, c is loss initial value, b is plasma change in dielectric constant
Rate, e are Dissipation change rate, Δ εr' it is the dimension for presetting change in dielectric constant rate, Δ ε "rFor the dimension for presetting Dissipation change rate；
Zin4=η0,
Wherein, η0Represent the characteristic impedance of air, ηTRepresent the characteristic impedance of shock wave tube wall, ηpRepresent the spy of plasma
Property impedance：k0It is wave number of the electromagnetic wave in free space, εTFor the dielectric constant of shock wave tube wall, εrFor plasma
The complex dielectric permittivity of body, d1For the thickness of shock wave tube wall, d2For plasma thickness；
Initialize plasma dielectric constant initial value a1=1, initial value c is lost1=0, enable objective function F be minimized,
Solve plasma change in dielectric constant rate b1With Dissipation change rate e1；According to more new formula：
am=am-1+bm-1Δε′r, cm=cm-1+em-1Δε″r
Plasma dielectric constant initial value and loss initial value are updated, enables objective function F be minimized, solves plasma
Body change in dielectric constant rate and Dissipation change rate, until at the beginning of obtaining the plasma dielectric constant of M sections of single treatment periods
Initial value aM, loss initial value cM, plasma change in dielectric constant rate bMAnd Dissipation change rate eM, then obtain plasma and be situated between again
Electric constant.
The beneficial effects of the present invention are：
The present invention provides a kind of plasma complex dielectric permittivity transient state Microwave reflection measurement based on shock tube experiment platform
Method and device handles received reflection signal to obtain the true anti-of shock wave tube wall surface by calibration and cancellation techniques
Coefficient is penetrated, the influence of test macro itself reflection signal is removed；Recycle obtained shock wave tube wall surface reflection coefficient it is counter push away it is sharp
Plasma complex dielectric permittivity changes in wave duct；Meanwhile complex dielectric permittivity is linear in a short time using plasma by the present invention
The approximate processing of variation effectively realizes plasma complex dielectric permittivity instantaneous measurement.
Detailed description of the invention
Fig. 1 is plasma complex dielectric permittivity transient state Microwave reflection measurement schematic device of the present invention.
Fig. 2 is present invention calibration and cancellation process schematic illustration.
Fig. 3 is shock tube electromagnetic model of the present invention.
Fig. 4 is middle-high density of embodiment of the present invention state plasma complex dielectric permittivity test result figure.
Fig. 5 is middle density state plasma complex dielectric permittivity test result figure in the embodiment of the present invention.
Fig. 6 is low-density state plasma complex dielectric permittivity test result figure in the embodiment of the present invention.
Specific embodiment
The present invention is described in further details below in conjunction with drawings and examples.
The present invention provides a kind of plasma complex dielectric permittivity transient state Microwave reflection measurement device, and structure is as shown in Figure 1；
Including signal source, offset extension set, receiver, industrial personal computer, lens, electromagnetic horn, shock tube and two microwave dark rooms；The loudspeaker
Antenna and lens are set in the first microwave dark room, and the signal source output signal is by offseting extension set excitation electromagnetic horn transmitting
Microwave, the microwave is by lensing in plasma in shock tube；The plasma part transmission, part are reflected, institute
Transmitted wave is stated into the second microwave dark room and is absorbed；The back wave returns along original route and is received and passed through by electromagnetic horn
It offsets extension set and reaches receiver, the industrial personal computer is measured to receiver signal and data processing and to export plasma multiple
Dielectric constant.Measurement method based on above-mentioned measuring device in the present invention is divided into two parts, and first part is to utilize calibration and right
The technology that disappears obtains the variation of shock tube surface reflection coefficient；Second part is to be led to according to the shock tube surface reflection coefficient that measurement obtains
The objective function for crossing setting, which optimizes, counter pushes away in shock tube the variation of plasma complex dielectric permittivity.
Wherein, it calibrates and to offset principle as shown in Figure 2；Present invention test includes that the result of three kinds of different conditions carries out school
Standard is described in detail below：
1, test mode one
As shown in Fig. 2 (a), lens, electromagnetic horn, waveguide coaxial converter and radio-frequency cable are considered as an entirety,
The window of first microwave dark room is blocked using absorbing material in step 1；Its electromagnetism spy is characterized with two port scattering matrix
Property, port 1 is that radio-frequency cable feeds entry port, and port 2 is the exit facet of lens, and collision matrix expression is as follows：
Wherein, S11For the reflection coefficient of 1 port, S12For 1 port to the transmission coefficient of 2 ports, S21For 2 ports to 1 port
Transmission coefficient, S22For the reflection coefficient of 2 ports；
In the case where not carrying out offseting operation, the back wave E1 tested can be expressed as follows：
E1=E0 (S12S21Γ+S11)
Since background is absorbing material under the state, Γ can be considered 0, that is, the reflection of background be not present, and above formula can be rewritten as：
E1=E0S11
It offsets operation and is divided into that hardware offsets and software offsets two steps, hardware offsets i.e. using directional coupler by portion
Distribution penetrates signal and is coupled to reception signal branch, makes to reflect signal E1 under coupled signal and the state by attenuator and phase shifter
Constant amplitude reverse phase, make under this state to receive signal as small as possible；But it is limited to manual operation since hardware offsets and is extremely difficult to manage
That thinks offsets effect, it is therefore desirable to and software offsets, and receives signal to system under this state and measures and determine its amplitude-phase,
Then reception signal at this time becomes known quantity E1* from E1, and expression is as follows：
E1*=E0S11-E0*
Wherein, E0* is the coupled signal that hardware offsets introducing；
The purpose for offseting operation is to remove the letter of reflection caused by electromagnetic horn, lens and waveguide coaxial converter
Number to test shock wave tube wall surface emission ratio influence；
2, test mode two
As shown in Fig. 2 (b), when not generating plasma in shock tube, visible interior, which is full of air and is in, stablizes shape
State, transmitting signal remain unchanged, and carry out offseting operation before transient test experiment, then the receiver in transient test experimentation
Receive reflection signal E2 to be represented by：
E2=E0S12S21Γ0+E1*
Γ0It is the reflection coefficient of plane wave vertical incidence shock wave tube wall when being full of air in shock tube；
3, test mode three
As shown in Fig. 2 (c), when generating plasma in shock tube, visible interior is full of plasma and meets uniform
Distribution, transmitting signal remain unchanged, and carry out offseting operation before transient test experiment, then the shape in transient test experimentation
State receiver receives reflection signal E3 and is represented by：
E3=E0S12S21Γ1+E1*
Γ1It is the reflection coefficient of plane wave vertical incidence shock wave tube wall when being full of plasma in shock tube.
In the present embodiment, plasma complex dielectric permittivity transient state Microwave reflection measurement process is as follows：
Step 1：According to shown in Fig. 1, connection system sets up experiment porch；
Step 2：Opening signal source, according to shown in Fig. 2 (a), setting test mode one is (by the window of the first microwave dark room
Blocked using absorbing material), the attenuator phase shifter that adjusting offsets extension set makes the reception signal of receiver tend to noise, and measurement is simultaneously
Record receives signal at this time, is denoted as E1*；
Step 3：It keeps signal source and to offset extension set state constant, take down absorbing material, device is made to keep preparing experiment shape
State；Then, it carries out plasma transient experiment and records receiver to receive signal, obtain discrete reception signal data：
Data=[data (1), data (2), data (3) ..., data (T)]
Wherein, T is total number of sample points：T=M × N, N are sampling number in the default single treatment period, and M is at single
Manage the quantity of period；It should be noted that：Data (1) is data (i.e. two E2 of the test mode) value for not generating plasma,
Remainder is according to the value for being accordingly to be regarded as three E3 of test mode；
Step 4：Above-mentioned discrete reception signal is calibrated, the reflection coefficient Γ of shock wave tube wall is obtained1(n)：
Step 5：Reflection coefficient Γ based on shock wave tube wall1(n), plasma complex dielectric permittivity is calculated.
In the present invention, shock tube surface reflection coefficient computation model in shock tube each region as shown in figure 3, only consider
Primary event, η0Represent the characteristic impedance of air, ηTRepresent the characteristic impedance of Teflon, ηpThe characteristic impedance of plasma is represented,k0It is wave number of the electromagnetic wave in free space, εTFor the dielectric constant of Teflon, εrFor plasma
Complex dielectric permittivity；Γ2、Γ3、Γ4Respectively represent the reflection coefficient of T2, T3, T4 interface, Zin、Zin2、Zin3、Zin4Generation respectively
The input impedance of table T1, T2, T3, T4 interface, expression are as follows：
Zin4=η0
And shock tube surface reflection coefficient Γ is represented by：
In shock tube test, the dielectric constant of plasma and loss are as Time Continuous changes, such as by εrDepending on
For the function of time, then reflection coefficient expression formula is represented by Γ=f (εr), in a short period of time, one can consider that being situated between
Electric constant and loss change linearly at any time, that is, may be assumed that ε 'r(t)=a+bt, ε "r(t)=c+et, a and c are represented at single
The initial value of dielectric constant and loss in the period is managed, b and e represent rate of change, therefore, number will be measured in calculating process of the present invention
According to being divided into M single treatment period, and in each single treatment period include N number of sampled point；
For the single processing period, further for analysis is facilitated, by time normalization, and for the ease of optimizing,
The dimension of change rate is set, then above formula is variable turns toUnknown number at this time only has
B and e, since the change in dielectric constant of plasma is smaller, the dimension Δ ε ' of the present embodiment medium dielectric constant microwave medium change raterIt is set as
0.0001, the dimension Δ ε " of Dissipation change raterIt is set as 0.0001；Reflection coefficient expression formula is represented by this time：
The measurement problem of dielectric constant and loss at this time, has become an optimization computation problem, and test value function is
Γ1, optimization object function is represented by：
Wherein, m=1,2,3 ..., M indicate m-th of single treatment period.
The present embodiment measures the plasma of high, normal, basic three kinds of density states, and signal source frequency uses 10GHz,
It has carried out that hardware offsets and software offsets respectively before the experiments, has been measured according to technical solution of the present invention, concrete outcome
As shown in Fig. 4, Fig. 5, Fig. 6, the present invention can distinguish different densities plasmoid completely as can be known from the results, it was demonstrated that the present invention
It is feasible effective.
The above description is merely a specific embodiment, any feature disclosed in this specification, except non-specifically
Narration, can be replaced by other alternative features that are equivalent or have similar purpose；Disclosed all features or all sides
Method or in the process the step of, other than mutually exclusive feature and/or step, can be combined in any way.
Claims (2)
1. a kind of plasma complex dielectric permittivity transient state Microwave reflection measurement device, including signal source, offset extension set, receiver,
Industrial personal computer, lens, electromagnetic horn, shock tube and two microwave dark rooms；It is characterized in that, the electromagnetic horn is set to lens
In first microwave dark room, the signal source output signal is by offseting extension set excitation electromagnetic horn transmitting microwave, the microwave warp
Lensing is crossed in plasma in shock tube；The plasma part transmission, part are reflected, and the transmitted wave enters second
Microwave dark room is simultaneously absorbed；The back wave, which returns to be received and passed through by electromagnetic horn along original route, offsets extension set arrival reception
Machine, the industrial personal computer measure receiver signal and data processing and export plasma complex dielectric permittivity.
2. a kind of plasma complex dielectric permittivity transient state Microwave reflection measurement method, which is characterized in that include the following steps：
Step 1：Opening signal source blocks the window of the first microwave dark room using absorbing material, adjusts the decaying for offseting extension set
Device phase shifter makes the reception signal of receiver tend to noise, measures and records and receives signal at this time, is denoted as E1*；
Step 2：It keeps signal source and to offset extension set state constant, take down absorbing material, carry out plasma transient experiment and simultaneously remember
It records receiver and receives signal, obtain discrete reception signal data：
Data=[data (1), data (2), data (3) ..., data (T)]
Wherein, T is total number of sample points：T=M × N, N are sampling number in the default single treatment period, when M is single treatment
Between section quantity；
Step 3：Above-mentioned discrete reception signal is calibrated, the reflection coefficient Γ of shock wave tube wall is obtained1(n)：
Step 4：Reflection coefficient Γ based on shock wave tube wall1(n), plasma complex dielectric permittivity is calculated：
According to the reflection coefficient Γ of shock wave tube wall1(n) objective function is constructed：
M=1,2,3 ..., M
Wherein, a is plasma dielectric constant initial value, c is loss initial value, b is plasma change in dielectric constant rate, e
For Dissipation change rate, Δ ε 'rFor the dimension for presetting change in dielectric constant rate, Δ ε "rFor the dimension for presetting Dissipation change rate；
Zin4=η0,
Wherein, η0Represent the characteristic impedance of air, ηTRepresent the characteristic impedance of shock wave tube wall, ηpRepresent the characteristic resistance of plasma
It is anti-：k0It is wave number of the electromagnetic wave in free space, εTFor the dielectric constant of shock wave tube wall, εrFor plasma
Complex dielectric permittivity, d1For the thickness of shock wave tube wall, d2For plasma thickness；
Initialize plasma dielectric constant initial value a1=1, initial value c is lost1=0, it enables objective function F be minimized, solves
Plasma change in dielectric constant rate b1With Dissipation change rate e1；According to more new formula：
am=am-1+bm-1Δε′r, cm=cm-1+em-1Δε″r
Plasma dielectric constant initial value and loss initial value are updated, objective function F is enabled to be minimized, solves plasma Jie
Electric constant change rate and Dissipation change rate, until obtaining the plasma dielectric constant initial value of M sections of single treatment periods
aM, loss initial value cM, plasma change in dielectric constant rate bMAnd Dissipation change rate eM, then obtaining plasma, to answer dielectric normal
Number.
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