CN108866478A - Photomask manufacturing method and mask plate - Google Patents
Photomask manufacturing method and mask plate Download PDFInfo
- Publication number
- CN108866478A CN108866478A CN201810777200.6A CN201810777200A CN108866478A CN 108866478 A CN108866478 A CN 108866478A CN 201810777200 A CN201810777200 A CN 201810777200A CN 108866478 A CN108866478 A CN 108866478A
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- material layer
- polymer material
- mask plate
- layer
- production method
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Production method the present invention relates to mask plate technical field, the production method for proposing a kind of mask plate, the mask plate includes：Polymer material layer is formed on bearing substrate；Coining glue is formed on polymer material layer；It is imprinted using mold corresponding with exposure mask plate pattern to coining glue；To after coining coining glue and polymer material layer perform etching, to form reticle pattern on polymer material layer；Bearing substrate is removed from polymer material layer, to form mask plate.The disclosure can form relatively thin polymer material layer as mask plate by above-mentioned technique.On the one hand, the higher aperture of density can be formed on relatively thin polymer material layer as reticle pattern；On the other hand, the density of high molecular material is smaller, and when throwing the net polymer material layer, the yield force of each position of polymer material layer is more uniform, so that the pattern on mask plate is more evenly.
Description
Technical field
The present invention relates to mask plate technical field more particularly to a kind of photomask manufacturing methods and mask plate.
Background technique
Mask plate is a kind of plate body structure with aperture, and the aperture on mask plate forms the mask pattern of mask plate, is led to
Pattern corresponding with mask pattern can be formed on substrate by crossing mask pattern.For example, being generallyd use in OLED manufacturing process
R, G, B luminescent material are vaporized on the correspondence mask pattern opening area in array substrate by mask plate.
In the related technology, the production method of mask plate generally comprises etching method, laser method and galvanoplastic.Etching method and swash
Light method is that the aperture pattern of mask plate is formed on the plate of mask plate, and galvanoplastic are to deposit to form mask plate in metal substrate
Pattern.
However, traditional mask plate plate is usually with invar alloy (Invar) for material, invar alloy forms plate
Thickness is usually 20~50 microns.When making mask plate by etching method or laser method, the thickness of invar alloy plate is limited
The density of aperture on mask plate.When making the mask plate of high density aperture using galvanoplastic, need by the way of armstrong's patent
The mask plate of formation on metallic substrates is removed from metal substrate, this method has certain damage to mask plate.
It should be noted that the information in the invention of above-mentioned background technology part is only used for reinforcing the reason to background of the invention
Solution, therefore may include the information not constituted to the prior art known to persons of ordinary skill in the art.
Summary of the invention
The purpose of the present invention is to provide a kind of production method of mask plate and mask plates.This method passes through coining, etching
The methods of form the mask plate of high molecular material composition a kind of, so that height can not be formed by solving on mask plate in the related technology
The technical issues of density open cell.
Other characteristics and advantages of the invention will be apparent from by the following detailed description, or partially by the present invention
Practice and acquistion.
According to an aspect of the present invention, a kind of production method of mask plate is provided, this method includes：
Polymer material layer is formed on bearing substrate；
Coining glue is formed on the polymer material layer；
It is imprinted using mold corresponding with exposure mask plate pattern to the coining glue；
To after the coining the coining glue and polymer material layer perform etching, thus in the high molecular material
The reticle pattern is formed on layer；
The bearing substrate is removed from the polymer material layer, to form mask plate.
In a kind of exemplary embodiment of the invention, the polymer material layer is polyimides, poly terephthalic acid second
Any one in diol ester, cyclic olefin polymer.
In a kind of exemplary embodiment of the invention, the bearing substrate is transparent substrate, described by the bearing substrate
Include from polymer material layer removing：
Using the side far from the high molecular material of transparent substrate described in laser irradiation, thus by the transparent substrate
It is removed from the polymer material layer.
It is described also to be wrapped before formation coining glue on the polymer material layer in a kind of exemplary embodiment of the invention
It includes：Etching barrier layer is formed on the polymer material layer, the speed that is etched of the etching barrier layer is less than the high score
The speed that sub- material layer is etched.
In a kind of exemplary embodiment of the invention, after being performed etching to the coining glue and by the carrying base
Plate is removed from the polymer material layer：Protective layer is formed on the etching barrier layer.
In a kind of exemplary embodiment of the invention, form protective layer on the etching barrier layer further includes later：?
The polymer material layer forms magnetosphere far from the etching barrier layer side.
In a kind of exemplary embodiment of the invention, in the polymer material layer far from etching barrier layer side shape
Further include later at magnetosphere：Remove the protective layer.
According to an aspect of the present invention, a kind of mask plate is provided, which includes：
Polymer material layer is formed with reticle pattern on the polymer material layer；The polymer material layer is poly-
Acid imide, polyethylene terephthalate, any one in cyclic olefin polymer.
According to an aspect of the present invention, the polymer material layer with a thickness of 0.5um-3um.
According to an aspect of the present invention, the mask plate further includes：Etching barrier layer and magnetosphere.Etching barrier layer position
In the side of the polymer material layer；Magnetosphere is located at the other side of the polymer material layer, is used for the mask plate
It is adsorbed in array substrate.
The present invention provides a kind of photomask manufacturing method and mask plate.The disclosure can be with shape by techniques such as coining, etchings
At relatively thin polymer material layer as mask plate.On the one hand, can to form density on relatively thin polymer material layer higher
Aperture is as reticle pattern；On the other hand, the density of high molecular material is smaller, when throwing the net polymer material layer,
The yield force of each position of polymer material layer is more uniform, so that the pattern on mask plate is more evenly.
It should be understood that above general description and following detailed description be only it is exemplary and explanatory, not
It can the limitation present invention.
Detailed description of the invention
The drawings herein are incorporated into the specification and forms part of this specification, and shows and meets implementation of the invention
Example, and be used to explain the principle of the present invention together with specification.It should be evident that the accompanying drawings in the following description is only the present invention
Some embodiments for those of ordinary skill in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 is a kind of flow chart of exemplary embodiment of disclosure photomask manufacturing method；
The knot of Fig. 2-Fig. 8 each film layer structure variation when being the production method of the mask plate provided using the present exemplary embodiment
Structure schematic diagram；
Fig. 9 is the cross-sectional view of mold in a kind of exemplary embodiment of the disclosure；
Figure 10 is a kind of open structural schematic diagram of exemplary embodiment of mask plate；
Figure 11 is a kind of open cross-sectional view of exemplary embodiment of mask plate；
Figure 12 is the comparison diagram of disclosure mask plate with yield force distribution each when exposure mask analogue simulation is thrown the net in the related technology.
Specific embodiment
Example embodiment is described more fully with reference to the drawings.However, example embodiment can be real in a variety of forms
It applies, and is not understood as limited to example set forth herein；On the contrary, these embodiments are provided so that the present invention will more comprehensively and
Completely, and by the design of example embodiment comprehensively it is communicated to those skilled in the art.Identical appended drawing reference indicates in figure
Same or similar structure, thus the detailed description that them will be omitted.
Although the term of relativity, such as "upper" "lower" is used to describe a component of icon for another in this specification
The relativeness of one component, but these terms are in this manual merely for convenient, for example, with reference to the accompanying drawings described in show
The direction of example.It is appreciated that, if making it turn upside down the device overturning of icon, the component described in "upper" will
As the component in "lower".Term of other relativities, such as "high" " low " "top" "bottom" " left side " " right side " etc. are also made to have similar
Meaning.When certain structure is at other structures "upper", it is possible to refer to that certain structural integrity is formed in other structures, or refer to certain structure
It is " direct " to be arranged in other structures, or refer to that certain structure is arranged in other structures by the way that another structure is " indirect ".
Term "one", " one ", " described " to indicate there are one or more elements/component part/etc.；Term " packet
Include " and " having " to indicate the open meaning being included and refer to that the element/component part/in addition to listing waits it
Outside also may be present other element/component part/etc..
The present exemplary embodiment provides a kind of production method of mask plate, and as Figure 1-Figure 8, Fig. 1 is disclosure exposure mask
A kind of version flow chart of exemplary embodiment of production method.Fig. 2-Fig. 8 is the mask plate provided using the present exemplary embodiment
The structural schematic diagram of each film layer structure variation when production method.This method includes：
Step S1：Polymer material layer is formed on bearing substrate；
Step S2：Coining glue is formed on the polymer material layer；
Step S3：It is imprinted using mold corresponding with exposure mask plate pattern to the coining glue；
Step S4：To after the coining the coining glue and polymer material layer perform etching, thus in the height
The reticle pattern is formed on molecular material layer；
Step S5：The bearing substrate is removed from the polymer material layer, to form mask plate.
The present invention provides a kind of photomask manufacturing method and mask plate.The disclosure can be with shape by techniques such as coining, etchings
At relatively thin polymer material layer as mask plate.On the one hand, can to form density on relatively thin polymer material layer higher
Aperture can be applied to the vapor deposition process of display panel luminescent material by the mask plate that this method makes as reticle pattern
In, to meet the production of high pixel display panel；On the other hand, the density of high molecular material is smaller, to high molecular material
Layer is when being thrown the net, each position of polymer material layer influenced by self gravity it is smaller so that polymer material layer is each
The yield force of a position is more uniform, and the mask pattern on mask plate is more evenly.
Above-mentioned steps are described in detail below：
Step S1：Polymer material layer is formed on bearing substrate.As shown in Fig. 2, in the present exemplary embodiment, Ke Yitong
It crosses coating processes and coats high molecular material on bearing substrate 1, due to the property of high molecular material itself, high molecular material can be with
Form relatively thin polymer material layer 2.Wherein, high molecular material can be polyimides, polyethylene terephthalate, ring
Any one in olefin polymer, the thickness of polymer material layer can be 0.5um-3um.
Step S2：Coining glue 3 is formed on the polymer material layer 2.In the present exemplary embodiment, step is being carried out
S4：To after the coining the coining glue and polymer material layer perform etching when, due to coining glue 3 be organic matter, pressure
The fast speed that is etched of glue 3 is printed, before being cut through, coining glue 3 may be etched polymer material layer 2.This example
Property embodiment in, on the polymer material layer 2 formed coining glue 3 before can also include：On the polymer material layer 2
Etching barrier layer 4 is formed, the speed that is etched of the etching barrier layer 4 can be less than what the polymer material layer 2 was etched
Speed.In step 4：To after the coining the coining glue and polymer material layer perform etching when, first to etching hinder
Barrier 4 and coining glue 3 perform etching, and mask pattern, the position of opening on etching barrier layer 4 are initially formed on etching barrier layer 4
After cutting through, start to perform etching macromolecule layer, after imprinting glue and being etched, on etching barrier layer 4 position of opening with
Outer part can stop etching substance, and engraving confrontation polymer material layer is avoided to damage.Etching barrier layer 4
The speed that is etched less than the polymer material layer 2 of the speed that is etched etching barrier layer can be improved stop etching substance
Time, to guarantee before etching barrier layer is etched, polymer material layer is cut through.Wherein, etching barrier layer can be with
SiOx is selected, with to avoid etching barrier layer thermal change occurs in process for the lower thin-film material of the thermal expansion coefficients such as SiN
Shape, the thickness of etching barrier layer can choose as 300 Ethylmercurichlorendimides~3000 Ethylmercurichlorendimides.
Step S3：It is imprinted using mold corresponding with exposure mask plate pattern to the coining glue.As shown in figure 9, being
The cross-sectional view of mold in a kind of exemplary embodiment of the disclosure.Mold may include plate-like body 51 and be located at plate-like body 51 1
Stamping and crowing 52 on side could be formed with anticol layer 53 on stamping and crowing 52.Imprint convex 52 and opening on mask pattern
Hole is corresponding.As shown in figure 3, the stamping and crowing using mold squeezes to coining glue and can form exposure mask on coining glue 3
Pattern.Anticol layer 53 separates convenient for mold with coining glue.
Step S4：To after coining the coining glue and polymer material layer perform etching, as shown in figure 4, passing through quarter
Erosion can form the reticle pattern on the polymer material layer.In step 4, inductively coupled plasma can use
(ICP) lithographic technique performs etching coining glue and polymer material layer.When being formed with etch stopper on polymer material layer
When layer, step 4 also needs to perform etching etching barrier layer.
Step S5：The bearing substrate is removed from the polymer material layer, to form mask plate.This exemplary reality
It applies in example, after bearing substrate is removed from polymer material layer, since polymer material layer is relatively thin, in no supporting role
Under, polymer material layer is easy to happen bending damage.In the present exemplary embodiment, as shown in figure 5, being carried out to the coining glue
Can also include after etching and by the bearing substrate before polymer material layer removing：In the etch stopper
Protective layer 5 is formed on layer.Protective layer 5 may include substrate and adhesion layer, and substrate can choose and be selected as polyimides, is poly- to benzene
Naphthalate, clear polyimides etc., adhesion layer can choose pressure sensitive adhesive, PU type glue material etc..
In the present exemplary embodiment, the bearing substrate can be transparent substrate, can use transparent described in laser irradiation
The side far from the high molecular material of substrate, so that the transparent substrate be removed from the polymer material layer.Such as Fig. 6
Shown, it is close that the side far from the polymer material layer of transparent substrate described in laser irradiation can destroy polymer material layer
The molecular structure of transparent transparent substrate side, so that transparent substrate be removed.Wherein, it is resistant to high temperature that transparent substrate, which can choose,
High temp glass, quartz, any one in machine glass.It should be understood that in other exemplary embodiments, there are also more
Selection can remove bearing substrate from polymer material layer, for example, impregnated by removing liquid medicine etc., these belong to this public affairs
The protection scope opened.
In the present exemplary embodiment, as shown in fig. 7, can also be wrapped after forming protective layer on the etching barrier layer
It includes：Magnetosphere 6 is formed far from the etching barrier layer side in the polymer material layer.Magnetosphere can make mask plate exist
It is bonded under magnetic fields with substrates into intimate, to avoid generating shade when mask pattern is deposited on substrate.Wherein it is possible to select
The modes such as vapor deposition, sputtering form magnetosphere in high score material layer, and magnetosphere can choose invar alloy, dilval, nickel cobalt
One of ferrimagnets such as alloy or Perminvar or a variety of compositions.Magnetospheric thickness can choose as 0.5um-
5um。
In the present exemplary embodiment, as shown in figure 8, in the polymer material layer far from etching barrier layer side shape
Can also include later at magnetosphere：Remove the protective layer, to form mask plate, wherein removing protective layer can use it is upper
The laser lift-off technique stated.
The present exemplary embodiment also provides a kind of mask plate, and as shown in Figure 10,11, Figure 10 is a kind of open example of mask plate
Property embodiment structural schematic diagram, Figure 11 is a kind of open cross-sectional view of exemplary embodiment of mask plate.The mask plate includes height
Molecular material layer 7 is formed with reticle pattern 71 on the polymer material layer；The polymer material layer be polyimides,
Any one in polyethylene terephthalate, cyclic olefin polymer.Wherein, multiple cover can be set on a mask plate
Film figure, Tu10Zhong, there are two mask patterns for setting on mask plate, and it is heavy which can carry out patterns to two substrates simultaneously
Product.
In the present exemplary embodiment, the thickness of the polymer material layer can be 0.5um-3um.
In the present exemplary embodiment, the mask plate further includes：Etching barrier layer 8 and magnetosphere 9.Etching barrier layer 8
In the side of the polymer material layer 7；Magnetosphere 9 is located at the other side of the polymer material layer 7, is used for the exposure mask
Version is adsorbed in array substrate.
It is disclosure mask plate and exposure mask analogue simulation in the related technology as shown in figure 12 in the present exemplary embodiment
The comparison diagram of each yield force distribution when net.Wherein, when right side is thrown the net for the mask plate that the disclosure provides using the drawing force of 4N, respectively
The distribution map of yield force on a position, it is mask plate made of material that left side, which is in the related technology with invar alloy (Invar),
When net on each position yield force distribution map.Obviously, the pulling force that the mask plate that the disclosure provides needs when throwing the net is smaller, and covers
In film version each position yield force distribution it is more uniform, therefore the disclosure provide mask plate when throwing the net, on mask pattern
Each clear size of opening it is more uniform.
The mask plate that the present exemplary embodiment provides can be made up of above-mentioned photomask manufacturing method, cover with above-mentioned
Specific description has been carried out in film version production method technical characteristic having the same and working principle, above content, herein not
It repeats again.The mask plate that the present exemplary embodiment provides is displayed in plate face production, and the luminescent materials such as R, G, B sink
Product, to realize the production of high-resolution display panel.
Those skilled in the art after considering the specification and implementing the invention disclosed here, will readily occur to its of the disclosure
His embodiment.This application is intended to cover any variations, uses, or adaptations of the disclosure, these modifications, purposes or
Adaptive change follow the general principles of this disclosure and including the undocumented common knowledge in the art of the disclosure or
Conventional techniques.The description and examples are only to be considered as illustrative, and the true scope and spirit of the disclosure are by claim
It points out.
It should be understood that the present disclosure is not limited to the precise structures that have been described above and shown in the drawings, and
And various modifications and changes may be made without departing from the scope thereof.The scope of the present disclosure is only limited by the attached claims.
Claims (10)
1. a kind of production method of mask plate, which is characterized in that including：
Polymer material layer is formed on bearing substrate；
Coining glue is formed on the polymer material layer；
It is imprinted using mold corresponding with exposure mask plate pattern to the coining glue；
To after coining the coining glue and polymer material layer perform etching, to be formed on the polymer material layer
The reticle pattern；
The bearing substrate is removed from the polymer material layer, to form mask plate.
2. the production method of mask plate according to claim 1, which is characterized in that the polymer material layer is that polyamides is sub-
Amine, polyethylene terephthalate, any one in cyclic olefin polymer.
3. the production method of mask plate according to claim 1, which is characterized in that the bearing substrate is transparent substrate,
It is described to include from polymer material layer removing by the bearing substrate：
Side using transparent substrate described in laser irradiation far from the polymer material layer, thus by the transparent substrate from
The polymer material layer removing.
4. the production method of mask plate according to claim 1, which is characterized in that described on the polymer material layer
Further include before forming coining glue：
Etching barrier layer is formed on the polymer material layer, the speed that is etched of the etching barrier layer is less than the high score
The speed that sub- material layer is etched.
5. the production method of mask plate according to claim 4, which is characterized in that performing etching it to the coining glue
Further include before polymer material layer removing afterwards and by the bearing substrate：
Protective layer is formed on the etching barrier layer.
6. the production method of mask plate according to claim 5, which is characterized in that formed protect on the etching barrier layer
Further include after sheath：
Magnetosphere is formed far from the etching barrier layer side in the polymer material layer.
7. the production method of mask plate according to claim 5, which is characterized in that in the polymer material layer far from institute
It states after etching barrier layer side forms magnetosphere and further includes：
Remove the protective layer.
8. a kind of mask plate, which is characterized in that including：
Polymer material layer is formed with reticle pattern on the polymer material layer；The polymer material layer is that polyamides is sub-
Amine, polyethylene terephthalate, any one in cyclic olefin polymer.
9. mask plate according to claim 8, which is characterized in that the polymer material layer with a thickness of 0.5um-3um.
10. mask plate according to claim 8, which is characterized in that the mask plate further includes：
Etching barrier layer, positioned at the side of the polymer material layer；
Magnetosphere, positioned at the other side of the polymer material layer, for the mask plate to be adsorbed in array substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810777200.6A CN108866478B (en) | 2018-07-16 | 2018-07-16 | Mask manufacturing method and mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810777200.6A CN108866478B (en) | 2018-07-16 | 2018-07-16 | Mask manufacturing method and mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108866478A true CN108866478A (en) | 2018-11-23 |
| CN108866478B CN108866478B (en) | 2023-07-21 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810777200.6A Active CN108866478B (en) | 2018-07-16 | 2018-07-16 | Mask manufacturing method and mask |
Country Status (1)
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| CN (1) | CN108866478B (en) |
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| CN113817981A (en) * | 2020-06-18 | 2021-12-21 | 中国科学技术大学 | Mask and manufacturing method thereof |
| CN113817981B (en) * | 2020-06-18 | 2022-09-30 | 中国科学技术大学 | Mask and manufacturing method thereof |
| CN116162893A (en) * | 2023-02-17 | 2023-05-26 | 京东方科技集团股份有限公司 | Mask plate and evaporation device |
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| CN108866478B (en) | 2023-07-21 |
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