CN108858842A - Silicon wafer wire cutting method - Google Patents
Silicon wafer wire cutting method Download PDFInfo
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- CN108858842A CN108858842A CN201810803403.8A CN201810803403A CN108858842A CN 108858842 A CN108858842 A CN 108858842A CN 201810803403 A CN201810803403 A CN 201810803403A CN 108858842 A CN108858842 A CN 108858842A
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- silico briquette
- cut
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
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- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The present invention relates to a kind of silicon wafer wire cutting methods, including：From actinobacillus wheel to take-up pulley cabling, make the old line of a part of the diamond wire on take-up pulley, another part is new line.From take-up pulley to actinobacillus wheel cabling, silico briquette is cut since zero cutting position by new line.After new wire cutting, by the old line on take-up pulley between actinobacillus wheel and take-up pulley reciprocal cabling, move down silico briquette persistently, silico briquette continued to cut.When the height of the non-cut portion of silico briquette residue is h, remaining silico briquette is cut using unidirectional cabling mode.Until diamond wire cuts through the silico briquette, wherein h is 1-5mm.In above-mentioned method for cutting silicon chips, silico briquette and final stage are cut since zero cutting position using new line by unidirectional unwrapping wire mode and cuts remaining silico briquette, is all conducive to the yields for improving silicon wafer.Interlude uses old line to cut silico briquette in a manner of double direction wire arrangement, is conducive to saving line.
Description
Technical field
The present invention relates to silicon wafer line cutting fields, more particularly to silicon wafer wire cutting method.
Background technique
Currently, silico briquette is cut into silicon wafer generally by wire cutting machine by field of silicon chip production.Traditional cutting method is
First silico briquette is cut from zero cutting position with old diamond wire.Since the cutting power of old line is poor, so that conventional method
The yields for the silicon wafer being cut into is lower.
Summary of the invention
Based on this, it is necessary to for the lower problem of yields for the silicon wafer that conventional method is cut into, provide a kind of silicon wafer line
Cutting method.
A kind of silicon wafer wire cutting method, including：
From actinobacillus wheel to take-up pulley cabling, make the old line of a part of the diamond wire on take-up pulley, another part is new line；
From take-up pulley to the reversed cabling of actinobacillus wheel, silico briquette is cut since zero cutting position using new line；
After new wire cutting, move down silico briquette persistently, using the old line on take-up pulley in actinobacillus wheel and
Reciprocal cabling between take-up pulley, continues to cut to silico briquette；
When the height of the non-cut portion of silico briquette residue is h, remaining silico briquette is cut using unidirectional cabling mode, until Buddha's warrior attendant
Line cuts through the silico briquette, and wherein h is 1mm-5mm.
In above-mentioned method for cutting silicon chips, silico briquette is cut since zero cutting position using new line and final stage passes through list
Remaining silico briquette is cut to unwrapping wire mode, is all conducive to the yields for improving silicon wafer.Cutting middle section uses old line with double direction wire arrangement side
Formula cuts silico briquette, is conducive to saving line.
The h is 3mm in one of the embodiments,.
The diameter of the diamond wire is 80 μm in one of the embodiments, and guided wheel slot is away from being 264 μm.
The new line accounts for the 80%- of the height to be cut of silico briquette to the cutting-height of silico briquette in one of the embodiments,
85%.
The height to be cut of the silico briquette is 160mm in one of the embodiments,.
In one of the embodiments, when the height of the non-cut portion of silico briquette residue is zero, continue former direction cabling, and
Silico briquette is set to continue to move down 3mm-4mm.
During the unidirectional unwrapping wire mode of the use cuts remaining silico briquette in one of the embodiments, Buddha's warrior attendant used
Line is old line.
In one of the embodiments, it is described move down silico briquette persistently for:By silico briquette and substrate bonding, pass through machinery
Armband moves substrate and silico briquette persistently moves down, and the substrate is polyurethanes plate.
Detailed description of the invention
Fig. 1 is the schematic diagram of the silicon wafer wire cutting method of the embodiment of the present invention.
Wherein：
110, substrate 120, silico briquette 130, actinobacillus wheel
140, guide wheel 150, take-up pulley 160, diamond wire
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.Many details are explained in the following description in order to fully understand this hair
It is bright.But the invention can be embodied in many other ways as described herein, those skilled in the art can be not
Similar improvement is done in the case where violating intension of the present invention, therefore the present invention is not limited by the specific embodiments disclosed below.
It should be noted that it can directly on the other element when element is referred to as " being fixed on " another element
Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it, which can be, is directly connected to
To another element or it may be simultaneously present centering elements.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term " and or " used herein includes one or more phases
Any and all combinations of the listed item of pass.
The device cut to silicon rod is generally silicon slice linear cutter.Silicon slice linear cutter generally comprises rack, installation
Each line wheel, mechanical arm and control system on the rack.Two line wheels for storing diamond wire 160 are respectively actinobacillus wheel
130 and take-up pulley 150.Two line wheels for being used to form Buddha's warrior attendant gauze are two guide wheels 140.Between two guide wheels 140
Region is cutting region.Namely silico briquette 120 is cut by the Buddha's warrior attendant gauze between two guide wheels 140.Mechanical arm is set
It sets above two guide wheels 140.The cabling mode of diamond wire 160 can be set in advance in control system.Namely pass through program
Control the cabling mode of diamond wire 160 in entire cutting process.
The silicon wafer wire cutting method of the embodiment of the present invention is discussed in detail below in conjunction with attached drawing.
As shown in Figure 1, the silicon wafer wire cutting method of the embodiment of the present invention includes：
S100, from actinobacillus wheel 130 to 150 cabling of take-up pulley, keep a part of the diamond wire 160 on take-up pulley 150 old
Line, another part are new line.
S200, from take-up pulley 150 to the reversed cabling of actinobacillus wheel 130, silico briquette is cut since zero cutting position using new line
120。
It after S300, new wire cutting, moves down silico briquette 120 persistently, utilizes the old line on take-up pulley 150
Reciprocal cabling, continues to cut to silico briquette 120 between actinobacillus wheel 130 and take-up pulley 150.
S400, when the height of the remaining non-cut portion of silico briquette 120 is h, remaining silico briquette is cut using unidirectional cabling mode
120, until diamond wire 160 cuts through the silico briquette 120, wherein h 1mm-5mm.
Required cutting force is larger when 120 initial cut of silico briquette, if at this time with old wire cutting, due to old wire cutting power compared with
It is weak, it is easy to influence silicon wafer quality.Silico briquette 120 is cut since zero cutting position using new line in above-mentioned method for cutting silicon chips.
Since new line cutting force is larger, when cutting, the line bow that new line is formed is smaller, so that silicon wafer stress is relatively uniform, it is not easy to cause
The case where influence silicon wafer quality such as chipping, occurs.Also, final stage cuts remaining silico briquette 120 by unidirectional unwrapping wire mode, this
For sample for single silicon wafer, stress size and Impact direction are relatively stable.So silicon wafer is not easy chipping occur.And then have
Conducive to the higher yields of guarantee.Further, the above method.Old line is used to cut in a manner of double direction wire arrangement in cutting middle section
Silico briquette 120 is conducive to saving line.
Specifically, from actinobacillus wheel 130 to 150 cabling of take-up pulley, making the diamond wire 160 on take-up pulley 150 in step S100
A part be old line, another part is new line.Wherein, if haveing been friends in the past line on actinobacillus wheel 130, pass through actinobacillus wheel 130 to receipts
150 cabling of line wheel, so that the old line on actinobacillus wheel 130 is all arranged on take-up pulley 150.Then, then by actinobacillus wheel 130 to
150 cabling of take-up pulley, so that a part of the diamond wire 160 on take-up pulley 150 is new line.Initial old line on actinobacillus wheel 130
The old diamond wire 160 that can be returned from take-up pulley 150 after last cutting.It is, under original state, actinobacillus wheel
When being all new line on 130, silico briquette 120 can be cut by new line.New line just forms old line after cutting to silico briquette 120.This
The old line in part is located on take-up pulley 150.And this field traditional method is after cutting, by this part on take-up pulley 150
Old line is retracted to actinobacillus wheel 130.So that next time carries out cutting use to new silico briquette 120 by old line.Unwrapping wire is allowed in this way
There is a part of old line on wheel 130.It is understood that when being all new line under original state, on actinobacillus wheel 130, it can be by new
Line cuts silico briquette 120.New line just forms old line after cutting to silico briquette 120.The old line in this part is located on take-up pulley 150.
At this point it is possible to the old line in this part is not back to actinobacillus wheel 130.But from actinobacillus wheel 130 directly to 150 cabling of take-up pulley.By
In being all new line on actinobacillus wheel 130 at this time, so the diamond wire 160 on take-up pulley 150 can partially be new line, another part is old
Line.And new line is located in front of old line.Therefore new line can be first passed through to cut silico briquette 120.
Specifically, in step S200, from take-up pulley 150 to 130 cabling of actinobacillus wheel, through new line since zero cutting position
Cut silico briquette 120.Since the diamond wire 160 of 150 leading portion of take-up pulley is all new line, so new line can be prior to old line from take-up pulley
150 release.Silico briquette 120 is cut since zero cutting position so as to first pass through new line.Zero cutting position is exactly under silico briquette 120
The position that end face has just been contacted with diamond wire 160.Wherein, new line to the depth of cut of silico briquette 120 can be as needed cutting efficiency,
The combined factors such as the consumption of acceptable yields and acceptable new line determine.Specifically, the new line is to silico briquette 120
Cutting-height account for silico briquette 120 height to be cut 80%-85%.For example, the height to be cut of silico briquette 120 is 160mm.Step
In rapid S200, from take-up pulley 150 to 130 cabling of actinobacillus wheel, silico briquette 120 is cut since zero cutting position by new line, and new
Line accounts for the 80%-85% of the height to be cut of silico briquette 120 to the cutting-height of silico briquette 120.Then new line is deep to the cutting of silico briquette 120
Degree is 128mm-136mm.
Specifically, in step S300, after new wire cutting, by the old line on take-up pulley 150 in actinobacillus wheel 130 and take-up
Reciprocal cabling between wheel 150, moves down silico briquette 120 persistently, continues to cut to silico briquette 120.In above-mentioned cutting process,
Old line elder generation cabling on take-up pulley 150 is to actinobacillus wheel 130.Then guide wheel 140 rotates backward, the old line cabling on actinobacillus wheel 130
To take-up pulley 150.Then, guide wheel 140 rotates forward, the old line on take-up pulley 150 again cabling to actinobacillus wheel 130.So circulation
Back and forth.Silico briquette 120 is cut by the cabling of above-mentioned this mode.For example, the height to be cut of silico briquette 120 is 160mm,
If new line accounts for the 80% of the height to be cut of silico briquette 120, that is, new line to the cutting-height of silico briquette 120 to silico briquette 120
Depth of cut is 128mm.In other words, 120 section short transverse 0mm-128mm of silico briquette is cut by new line.New line is cut
After cutting, silico briquette 120 is cut by old line by reciprocal cabling mode.Cutting section can be in 128mm-158mm.Finally
The section 2mm can leave step S400 for, that is, cut remaining silico briquette 120 using unidirectional unwrapping wire mode.
Specifically, in step S400, when the height of the remaining non-cut portion of silico briquette 120 is h, using unidirectional unwrapping wire mode
Remaining silico briquette 120 is cut, and moves down silico briquette 120 persistently, until diamond wire 160 cuts through the silico briquette 120.Wherein, h is
1mm-5mm.For example, can be to use unidirectionally to put at the positions such as 1mm, 3mm or 5mm in the height of the remaining non-cut portion of silico briquette 120
Line mode cuts remaining silico briquette 120.Diamond wire 160 used can derive from actinobacillus wheel 130 in step S400, can also be from receiving
Line wheel 150.It, can be from actinobacillus wheel 130 to the unidirectional cabling of take-up pulley 150 namely after the double direction wire arrangement of step S300.It can also
From take-up pulley 150 to the unidirectional cabling of actinobacillus wheel 130.
In the present embodiment, the h is 3mm.In this way, maximum can be conducive to while guaranteeing higher yields
Limit cuts silico briquette 120 using double direction wire arrangement mode.To be conducive to saving line.
In the present embodiment, the diameter of the diamond wire 160 is 80 μm, and guided wheel slot is away from being 264 μm.The application of this field tradition
The diameter of diamond wire 160 is 85 μm.Traditional diamond wire 160 is since line footpath is larger, when cutting silico briquette 120, loses to silicon material
It is larger.Because the silicon material in the Buddha's warrior attendant gauze between two guide wheels 140 at the corresponding silico briquette 120 of single diamond wire 160 can be ground
Damage consumes.So the diameter of diamond wire 160 is bigger, silicon material abrasion loss is bigger.Correspondingly, also allowing for the silico briquette of same dimension
The quantity of 120 silicon wafers being cut into is fewer.For example, target silicon wafer height is constant.The gold that diameter using the present embodiment is 80 μm
Rigid line 160 cuts the silico briquette 120 of same dimension, and piece rate can be improved 1.51%.It is, if traditional approach can
To cut out 2313 silicon wafers, then in the present embodiment, when the diameter of diamond wire 160 is 80 μm, 2348 silicon wafers can be cut out.This implementation
Example in, guided wheel slot away from size be according to the diameter and target silicon wafer height of diamond wire 160 determine.For example, this field is normal
Target silicon wafer height is 180 μm, so 140 slot pitch of guide wheel is 264 μm in the present embodiment.
In the present embodiment, the height to be cut of the silico briquette 120 can be 160mm.It should be noted that under normal circumstances,
After the height to be cut of silico briquette 120 is cut, also need to continue to cut a distance.For example, in the remaining non-cut portion of silico briquette 120
Height continue former direction cabling when being zero, and silico briquette 120 is made to continue to move down 3mm-4mm.Because silico briquette 120 is just cut
When saturating, diamond wire 160 is inside silico briquette 120, it is not easy to observe.It is difficult to confirm whether silico briquette 120 is cut through.So silico briquette
120 height to be cut needs to be further continued for that silico briquette 120 is made to move down several millimeters after being cut, and ensures that silico briquette in this way
120 are cut through completely.For example, the silico briquette 120 of above-mentioned size is when being cut, the distance that moves down of silico briquette 120 generally can be
164mm or so.
In the present embodiment, after the silico briquette 120 is cut through, continue former direction cabling, until wire cutting operation terminates.Line is cut
It, can be from actinobacillus wheel 130 to 150 cabling of take-up pulley, so that 160 a part of diamond wire on take-up pulley 150 is after cutting operation
Old line, another part are new lines.It is ready so as to carry out wire cutting for next batch silico briquette 120.
It is described that diamond wire used in remaining silico briquette 120 is cut using unidirectional unwrapping wire mode in step S400 in the present embodiment
160 be old line.Be conducive to saving line in this way.For example, this can be passed through by the old line on take-up pulley 150 to 130 cabling of actinobacillus wheel
The old line of section cuts silico briquette 120.It is also possible to the old line on actinobacillus wheel 130 to 150 cabling of take-up pulley, it is old by this section
Line cuts silico briquette 120.
In this implementation, the method that moves down silico briquette 120 persistently：Silico briquette 120 and substrate 110 are bonded, machine is passed through
Tool armband moves substrate 110 and silico briquette 120 persistently moves down, and the substrate 110 is polyurethanes plate.To silico briquette 120 into
It is usually first that silico briquette 120 is be bonded with substrate 110 before line cutting operation, substrate 110 is then connected to silico briquette 120 together
Installation is on the robotic arm.Silico briquette 120 can be driven persistently to move down by the movement of mechanical arm.Substrate 110 can be many with material.
It here is due to polyurethanes plate pair as substrate 110 using polyurethanes plate.Polyurethanes plate is not easy to adhere to Buddha's warrior attendant
Line 160, so advantageously reducing the abrasion that diamond wire 160 occurs in cutting substrate 110.To be conducive to saving line, and
Be conducive to improve the yields of silicon wafer cutting.For example, the substrate 110 includes in parts by weight：Diphenylmethane diisocyanate
45-55 parts of ester, 55-65 parts of polyether polyol, 0.6-1 parts of promotor.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (8)
1. a kind of silicon wafer wire cutting method, which is characterized in that including：
From actinobacillus wheel to take-up pulley cabling, make the old line of a part of the diamond wire on take-up pulley, another part is new line；From receipts
Line wheel cuts silico briquette to the reversed cabling of actinobacillus wheel, using new line since zero cutting position；
After new wire cutting, move down silico briquette persistently, using the old line on take-up pulley in actinobacillus wheel and take-up
Reciprocal cabling between wheel, continues to cut to silico briquette；
When the height of the non-cut portion of silico briquette residue is h, remaining silico briquette is cut using unidirectional cabling mode, until diamond wire is cut
The saturating silico briquette, wherein h is 1mm-5mm.
2. silicon wafer wire cutting method according to claim 1, which is characterized in that the h is 3mm.
3. silicon wafer wire cutting method according to claim 1, which is characterized in that the diameter of the diamond wire is 80 μm, is led
Taking turns slot pitch is 264 μm.
4. silicon wafer wire cutting method according to claim 1, which is characterized in that the new line accounts for the cutting-height of silico briquette
The 80%-85% of the height to be cut of silico briquette.
5. silicon wafer wire cutting method according to claim 4, which is characterized in that the height to be cut of the silico briquette is
160mm。
6. silicon wafer wire cutting method according to claim 1, which is characterized in that in the height of the non-cut portion of silico briquette residue
When being zero, continue former direction cabling, and silico briquette is made to continue to move down 3mm-4mm.
7. silicon wafer wire cutting method according to claim 1, which is characterized in that the unidirectional unwrapping wire mode of the use is cut surplus
During remaining silico briquette, diamond wire used is old line.
8. silicon wafer wire cutting method according to claim 1, which is characterized in that it is described move down silico briquette persistently for:
By silico briquette and substrate bonding, substrate and silico briquette is driven persistently to move down by mechanical arm, the substrate is polyurethanes plate.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810803403.8A CN108858842A (en) | 2018-07-20 | 2018-07-20 | Silicon wafer wire cutting method |
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| CN201810803403.8A CN108858842A (en) | 2018-07-20 | 2018-07-20 | Silicon wafer wire cutting method |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109732796A (en) * | 2019-01-30 | 2019-05-10 | 无锡中环应用材料有限公司 | A kind of cutting method of monocrystalline silicon piece |
| CN110394911A (en) * | 2019-07-26 | 2019-11-01 | 扬州续笙新能源科技有限公司 | A kind of golden steel wire secondary utilization method manufactured suitable for silicon wafer |
| CN110394912A (en) * | 2019-08-07 | 2019-11-01 | 江苏高照新能源发展有限公司 | A kind of efficient monocrystalline silicon piece cutting technique |
| CN110682453A (en) * | 2019-09-29 | 2020-01-14 | 扬州荣德新能源科技有限公司 | Diamond wire anti-cutting method |
| CN112936623A (en) * | 2019-12-10 | 2021-06-11 | 阿特斯光伏电力(洛阳)有限公司 | Cutting method of diamond wire cutting device |
| CN113733377A (en) * | 2021-07-30 | 2021-12-03 | 隆基绿能科技股份有限公司 | Silicon wafer cutting method |
| WO2024045996A1 (en) * | 2022-08-31 | 2024-03-07 | Tcl Zhonghuan Renewable Energy Technology Co., Ltd. | Processing method of cutting through workpiece and processing system |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000141201A (en) * | 1998-11-10 | 2000-05-23 | Tokyo Seimitsu Co Ltd | Cutting method of wire saw |
| CN101628452A (en) * | 2009-07-31 | 2010-01-20 | 宁波升日太阳能电源有限公司 | Method for cutting silicon chips |
| CN103496043A (en) * | 2013-10-16 | 2014-01-08 | 内蒙古中环光伏材料有限公司 | Linear cutting sheave for solar silicon wafers |
| CN107116712A (en) * | 2017-05-26 | 2017-09-01 | 杨凌美畅新材料有限公司 | A kind of method for electroplating diamond wire high efficiency cutting silicon chip |
| CN107379294A (en) * | 2017-07-20 | 2017-11-24 | 阜宁协鑫光伏科技有限公司 | The method of diamond wire recycling cutting silicon chip |
| CN107901256A (en) * | 2017-11-15 | 2018-04-13 | 山东大海新能源发展有限公司 | The device and cutting method of Buddha's warrior attendant wire cutting polysilicon chip |
-
2018
- 2018-07-20 CN CN201810803403.8A patent/CN108858842A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000141201A (en) * | 1998-11-10 | 2000-05-23 | Tokyo Seimitsu Co Ltd | Cutting method of wire saw |
| CN101628452A (en) * | 2009-07-31 | 2010-01-20 | 宁波升日太阳能电源有限公司 | Method for cutting silicon chips |
| CN103496043A (en) * | 2013-10-16 | 2014-01-08 | 内蒙古中环光伏材料有限公司 | Linear cutting sheave for solar silicon wafers |
| CN107116712A (en) * | 2017-05-26 | 2017-09-01 | 杨凌美畅新材料有限公司 | A kind of method for electroplating diamond wire high efficiency cutting silicon chip |
| CN107379294A (en) * | 2017-07-20 | 2017-11-24 | 阜宁协鑫光伏科技有限公司 | The method of diamond wire recycling cutting silicon chip |
| CN107901256A (en) * | 2017-11-15 | 2018-04-13 | 山东大海新能源发展有限公司 | The device and cutting method of Buddha's warrior attendant wire cutting polysilicon chip |
Non-Patent Citations (1)
| Title |
|---|
| 赵礼刚: "金刚石线锯切割半导体陶瓷的机理与工艺研究", 《中国博士学位论文全文数据库 工程科技Ⅰ辑》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109732796A (en) * | 2019-01-30 | 2019-05-10 | 无锡中环应用材料有限公司 | A kind of cutting method of monocrystalline silicon piece |
| CN110394911A (en) * | 2019-07-26 | 2019-11-01 | 扬州续笙新能源科技有限公司 | A kind of golden steel wire secondary utilization method manufactured suitable for silicon wafer |
| CN110394912A (en) * | 2019-08-07 | 2019-11-01 | 江苏高照新能源发展有限公司 | A kind of efficient monocrystalline silicon piece cutting technique |
| CN110682453A (en) * | 2019-09-29 | 2020-01-14 | 扬州荣德新能源科技有限公司 | Diamond wire anti-cutting method |
| CN112936623A (en) * | 2019-12-10 | 2021-06-11 | 阿特斯光伏电力(洛阳)有限公司 | Cutting method of diamond wire cutting device |
| CN113733377A (en) * | 2021-07-30 | 2021-12-03 | 隆基绿能科技股份有限公司 | Silicon wafer cutting method |
| WO2024045996A1 (en) * | 2022-08-31 | 2024-03-07 | Tcl Zhonghuan Renewable Energy Technology Co., Ltd. | Processing method of cutting through workpiece and processing system |
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