CN108840323A - Coal ash for manufacturing for graphene chip method - Google Patents
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- C01B3/22—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen by decomposition of gaseous or liquid organic compounds
- C01B3/24—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen by decomposition of gaseous or liquid organic compounds of hydrocarbons
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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- C01B2203/12—Feeding the process for making hydrogen or synthesis gas
- C01B2203/1205—Composition of the feed
- C01B2203/1211—Organic compounds or organic mixtures used in the process for making hydrogen or synthesis gas
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Abstract
The present invention relates to technical field of graphene, coal ash for manufacturing is specifically referred to for the method for graphene chip, (1), by flyash after the wet-milling of vertical wet milk and the washing of hypergravity rinsing machine, the substance processed filters in cleaned filter tank, substance not soluble in water send drying machine dry, by the substance after drying after pulverizing magnetic separation iron remover except iron, melting chamber furnaced is sent to be separated.(2), a part of silica molten liquid is sent into fused silica catalyst converter, opens natural gas tank valve difference high-purity graphene and graphene silicon materials and graphene chip.(3), using calcium oxide, titanium oxide and graphene as waste and graphene calcium titanium film battery chip.(4), by all kinds of graphene chip packages at different required graphene IC products.It is raw material using abundant and cheap flyash, low cost is produced for making chip high purity graphite alkene material.
Description
Technical field
The present invention relates to technical field of graphene, in particular to coal ash for manufacturing for the method for graphene chip.
Background technique
China generates more than 500,000,000 tons of all kinds of flyash every year, and has about 3,000,000,000 tons of flyash to stack, both a large amount of to occupy soil
Ground, and serious polluted underground water.It is Chinese urgent problem to the efficient high value added utilization of flyash.
China is that chip height relies on import big country.2017, Chinese chip import volume was 260,100,000,000 dollars, was roughly equal to the people
1,756,100,000,000 yuan of coin.Chinese chip demand accounts for 50% or more the whole world, and domestic brand chip can only confess 8% or so.It is main former
Because first is that chip former material is at high cost and material core is backward in technique, second is that the design of high-end chip is drawn, manufacturing technology and equipment are overall
Fall behind.
Graphene chip work higher cost, complex procedures are prepared currently on the market.
Summary of the invention
The technical problem to be solved by the present invention is to overcome the defects of above-mentioned technology, provide coal ash for manufacturing for graphene chip
Method.
In order to solve the above technical problems, technical solution provided by the invention is method of the coal ash for manufacturing for graphene chip,
Include the following steps：
(1), by flyash after the wet-milling of vertical wet milk and the washing of hypergravity rinsing machine, the substance processed exists
It is filtered in cleaned filter tank, potassium sodium magnesium phosphorus substance soluble easily in water carries out resource circulation utilization, object not soluble in water in aqueous solution
Matter send drying machine dry, by the substance after drying after pulverizing magnetic separation iron remover except iron, melting chamber furnaced is sent to be divided
From.
(2), a part of silica molten liquid is sent into fused silica catalyst converter, opens natural gas tank valve difference
High-purity graphene and graphene silicon materials and graphene chip.A part of silica molten liquid is sent into silicon carbide
Furnace is added high-purity carbon black and produces carbofrax material, produces graphene chip through graphene coating.
(3), using calcium oxide, titanium oxide and graphene as waste and graphene calcium titanium film battery chip.
(4), by all kinds of graphene chip packages at different required graphene IC products.
As an improvement, melting chamber furnaced is separated according to different oxide ester mps in step (1), such as 1560-
The silica molten liquid of 1800 DEG C of acquisition high-purities.1840-1900 DEG C of acquisition titanium oxide molten liquids, 2050-2100 DEG C are obtained
Obtain aluminium oxide molten liquid, 2780-2800 DEG C of acquisition calcium oxide molten liquids.
As an improvement, in step (2),
The temperature of fused silica catalyst converter is 1560-1800 DEG C.
Fused silica catalyst converter complete main exothermic reaction be：
CH4 --- C (graphene)+2H2
The temperature of silicon carbide furnace is 2000-2200 DEG C.
Silicon carbide furnace complete main exothermic reaction be：
SiO2+3C (carbon black) --- SiC+2CO.
Coal ash for manufacturing of the present invention has the following advantages that for the method for graphene chip：It is using abundant and cheap flyash
Raw material, low cost are produced for making chip high purity graphite alkene material.
Detailed description of the invention
1, fused silica valve pipe.2, silica melts catalyst converter pond.3, gas delivering pipe.3, natural gas
Delivery pipe venthole.5, graphene.6, long-distance anti-explosion monitor.
Fig. 1 is schematic diagram of the coal ash for manufacturing of the present invention for the method for graphene chip.
Fig. 2 is coal ash for manufacturing for high purity graphite alkene and graphene chip technology and schematic device.
Fig. 3 is graphene silicon die technique and schematic device.
Fig. 4 is graphene semiconductor chip technology and schematic device.
Fig. 5 is pyrographite alkene semiconductor epitaxial growth chip technology and schematic device.
Fig. 6 is graphene superconductor chip technology and schematic device.
Specific embodiment
Present invention will be described in further detail below with reference to the accompanying drawings.
In conjunction with attached drawing, (1), by flyash after the wet-milling of vertical wet milk and the washing of hypergravity rinsing machine, process
The substance come filters in cleaned filter tank, and potassium sodium magnesium phosphorus substance soluble easily in water carries out resource circulation utilization in aqueous solution, no
The substance for being dissolved in water send drying machine dry, by the substance after drying after pulverizing magnetic separation iron remover except iron, send melting point
It is separated from furnace.
(2), a part of silica molten liquid is sent into fused silica catalyst converter, opens natural gas tank valve difference
High-purity graphene and graphene silicon materials and graphene chip.A part of silica molten liquid is sent into silicon carbide
Furnace is added high-purity carbon black and produces carbofrax material, produces graphene chip through graphene coating.
(3), using calcium oxide, titanium oxide and graphene as waste and graphene calcium titanium film battery chip.
(4), by all kinds of graphene chip packages at different required graphene IC products.
In step (1), melting chamber furnaced is separated according to different oxide ester mps, and such as 1560-1800 DEG C of acquisitions are high
The silica molten liquid of purity.1840-1900 DEG C of acquisition titanium oxide molten liquids, 2050-2100 DEG C of acquisition aluminium oxide meltings
Liquid, 2780-2800 DEG C of acquisition calcium oxide molten liquids.
In step (2),
The temperature of fused silica catalyst converter is 1560-1800 DEG C.
Fused silica catalyst converter complete main exothermic reaction be：
CH4 --- C (graphene)+2H2
The temperature of silicon carbide furnace is 2000-2200 DEG C.
Silicon carbide furnace complete main exothermic reaction be：
SiO2+3C (carbon black) --- SiC+2CO.
Embodiment 1：
With reference to Fig. 2
The first step opens fused silica pipeline valve 1 for fused silica feeding silica melting catalyst converter
In pond 2.
Second step opens natural gas valve, and natural gas is sent into gas delivering pipe 3 through gas delivering pipe venthole 4,
It is decomposed in silica melting catalyst converter pond 2 with the form quick catalysis of " air blowing big gun ", generates graphene 5 and hydrogen.Hydrogen
Send hydrogen gas tank.Graphene is through cooling recyclable device recycling.
The temperature of preferred molten silica catalyst converter is 1560-1800 DEG C.
Fused silica catalyst converter complete main exothermic reaction be：
CH4 --- C (graphene)+2H2 (1)
Third step, opening multiple bearing power mixer power switch are stirred, and keep part graphene fully dispersed to two
It aoxidizes in melted silicon, graphene silicon semiconductor material is made.
4th step opens 6 power switch of long-distance anti-explosion monitor, to temperature, the pressure, gas of silica melting catalyst converter
Body ingredient, flow carry out real-time online anti-explosion surveillance.
Advantage of the present invention：Using natural gas as raw material, using silica molten liquid as catalytic carrier, production high purity graphite alkene drop
80% or more low cost.
Embodiment 2：
With reference to Fig. 3
The first step prepares polysilicon after flyash is extracted silica, and polysilicon is at melting furnace (1300-1650 DEG C)
Graphene is added and produces graphene polysilicon and graphene polysilicon chips.
Polysilicon and graphene are sent into silicon single crystal rod furnace by second step, after 1300-1650 DEG C of production graphene monocrystalline silicon
Produce graphene silicon single crystal wafer.
Advantage of the present invention：Polysilicon and monocrystalline silicon intensity and electric conductivity are improved, to significantly improve solar energy conversion ratio.
Embodiment 3：
With reference to Fig. 4
Implementation steps
Graphene and gallium arsenide are sent into stir in gallium arsenide melting furnace and produce graphene gallium arsenide by the first step.
It is preferred that the temperature of gallium arsenide melting furnace is 1240-1350 DEG C.
Second step, graphene and oxidation are sowed, nitrogen be sent into nitridation sow in catalyst furnace, produce graphene nitridation sow.
It is preferred that the temperature that catalyst furnace is sowed in nitridation is 700-1500 DEG C.
Graphene gallium arsenide or graphene nitridation are sowed etched mechanism and take graphene semiconductor chip by third step, such as：Stone
Black alkene quantum chip, graphene flexible solar chip, graphene microwave device chip, graphene photoelectric device chip, graphite
Alkene nerve robot chip, graphene computer cell phone chip, graphene smart home chip.
The extensive or super of graphene semiconductor chip is made in 4th step, the encapsulated apparatus system of graphene semiconductor chip
Large scale integrated circuit product.
Advantage of the present invention：Graphene semiconductor chip can make chip raise speed 10,000,000 times or more, and energy consumption reduces by 70%, significantly
Increase service life.
Embodiment 4：
With reference to Fig. 5
The first step, by the aluminium oxide extracted in flyash, silica and through crude boron stone extract boron oxide, urged in plasma
Change and reacted in device with nitrogen, quickly generates aluminium nitride, silicon nitride and boron nitride respectively.
High temperature epitaxy growth crystal growing furnace is added in graphene by second step, produces graphene aluminum nitride crystal, graphene respectively
Silicon nitride crystal, graphene boron nitride crystal material.
It is preferred that the temperature of high temperature epitaxy growth crystal growing furnace is 1500-2000 DEG C.
Third step, by graphene aluminum nitride crystal, graphene silicon nitride crystal, graphene boron nitride crystal material, through carving
Erosion machine produces graphene aluminum nitride crystal chip, graphene silicon nitride crystal chip, graphene boron nitride chip product respectively.
Embodiment 5：
With reference to Fig. 6
High purity graphite alkene is respectively fed to niobium zirconium alloy melting furnace, niobium titanium alloy melting furnace, niobium titanium tantalum alloy and melts by the first step
Melt furnace, produces graphene niobium zirconium alloy, graphene niobium titanium alloy, graphene niobium titanium tantalum alloy superconductor respectively.
Second step, the etched mechanism of graphene superconductor take graphene superconductor chip, as graphene superconducts machine core
Piece, graphene superconduction communication chip, graphene superconduction high-energy particle accelerator chip, graphene super-conductive magnetic suspension chip, graphite
Alkene superconduction precision instrumentation chip, graphene superconducting logic and memory element chip.
The extensive or super of graphene superconductor chip is made in third step, the encapsulated apparatus system of graphene superconductor chip
Large scale integrated circuit product.
Advantage of the present invention：Graphene superconductor chip significantly improves plasticity and processing of the intensity of alloy without influencing alloy
Performance can also improve the inoxidizability and alkali resistant metal erosion performance of alloy.It is mainly used for space flight and aviation, atomic energy reaction
Heap, Novel electric light source sodium vapor lamp and other application field.
The present invention and its embodiments have been described above, this description is no restricted, shown in the drawings
Only one of embodiments of the present invention.All in all if those of ordinary skill in the art are inspired by it, this is not being departed from
In the case where innovation and creation objective, frame mode similar with the technical solution and embodiment are not inventively designed,
It should belong to protection scope of the present invention.
Claims (3)
1. coal ash for manufacturing is for the method for graphene chip, it is characterised in that include the following steps：
(1), by flyash after the wet-milling of vertical wet milk and the washing of hypergravity rinsing machine, the substance processed is being purified
It is filtered in filtering ponds, potassium sodium magnesium phosphorus substance soluble easily in water carries out resource circulation utilization in aqueous solution, and substance not soluble in water is sent
Drying machine is dry, by the substance after drying after pulverizing magnetic separation iron remover except iron, melting chamber furnaced is sent to be separated.
(2), a part of silica molten liquid is sent into fused silica catalyst converter, opens natural gas tank valve and produces respectively
High purity graphite alkene and graphene silicon materials and graphene chip.A part of silica molten liquid is sent into silicon carbide furnace,
High-purity carbon black is added and produces carbofrax material, produces graphene chip through graphene coating.
(3), using calcium oxide, titanium oxide and graphene as waste and graphene calcium titanium film battery chip.
(4), by all kinds of graphene chip packages at different required graphene IC products.
2. coal ash for manufacturing according to claim 1 is for the method and device of graphene chip, it is characterised in that：In step
(1) in, melting chamber furnaced is separated according to different oxide ester mps, the silica of such as 1560-1800 DEG C acquisition high-purities
Molten liquid.1840-1900 DEG C of acquisition titanium oxide molten liquids, 2050-2100 DEG C of acquisition aluminium oxide molten liquids, 2780-2800 DEG C
Obtain calcium oxide molten liquid.
3. coal ash for manufacturing according to claim 1 is for the method and device of graphene chip, it is characterised in that：In step
(2) in,
The temperature of fused silica catalyst converter is 1560-1800 DEG C.
Fused silica catalyst converter complete main exothermic reaction be：
CH4 --- C (graphene)+2H2
The temperature of silicon carbide furnace is 2000-2200 DEG C.
Silicon carbide furnace complete main exothermic reaction be：
SiO2+3C (carbon black) --- SiC+2CO.
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| CN201810776446.1A CN108840323A (en) | 2018-07-10 | 2018-07-10 | Coal ash for manufacturing for graphene chip method |
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| CN201810776446.1A CN108840323A (en) | 2018-07-10 | 2018-07-10 | Coal ash for manufacturing for graphene chip method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110902685A (en) * | 2019-12-10 | 2020-03-24 | 武翠莲 | Method for separating silicon-containing mixture to obtain industrial silicon |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62171940A (en) * | 1986-01-24 | 1987-07-28 | Shinko Kagaku Kogyo Kk | Production of long fiber using fly ash |
| CN101306426A (en) * | 2008-06-20 | 2008-11-19 | 北京世纪地和科技有限公司 | Method for extracting iron washed ore from fly ash or slag |
| CN101704523A (en) * | 2009-11-25 | 2010-05-12 | 杨大锦 | Production technology of high purity silicon carbide |
| CN101993084A (en) * | 2010-11-29 | 2011-03-30 | 中煤平朔煤业有限责任公司 | Method for preparing silicon dioxide and aluminum oxide from coal ash |
| CN104860298A (en) * | 2015-03-25 | 2015-08-26 | 孙旭阳 | Method for preparing graphene by using molten state reaction bed |
-
2018
- 2018-07-10 CN CN201810776446.1A patent/CN108840323A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62171940A (en) * | 1986-01-24 | 1987-07-28 | Shinko Kagaku Kogyo Kk | Production of long fiber using fly ash |
| CN101306426A (en) * | 2008-06-20 | 2008-11-19 | 北京世纪地和科技有限公司 | Method for extracting iron washed ore from fly ash or slag |
| CN101704523A (en) * | 2009-11-25 | 2010-05-12 | 杨大锦 | Production technology of high purity silicon carbide |
| CN101993084A (en) * | 2010-11-29 | 2011-03-30 | 中煤平朔煤业有限责任公司 | Method for preparing silicon dioxide and aluminum oxide from coal ash |
| CN104860298A (en) * | 2015-03-25 | 2015-08-26 | 孙旭阳 | Method for preparing graphene by using molten state reaction bed |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110902685A (en) * | 2019-12-10 | 2020-03-24 | 武翠莲 | Method for separating silicon-containing mixture to obtain industrial silicon |
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Application publication date: 20181120 |
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