CN108833760A - A kind of imaging sensor, camera module and electronic equipment - Google Patents
A kind of imaging sensor, camera module and electronic equipment Download PDFInfo
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- CN108833760A CN108833760A CN201810965950.6A CN201810965950A CN108833760A CN 108833760 A CN108833760 A CN 108833760A CN 201810965950 A CN201810965950 A CN 201810965950A CN 108833760 A CN108833760 A CN 108833760A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
Abstract
The embodiment of the present application discloses a kind of imaging sensor, camera module and electronic equipment.The imaging sensor includes substrate, substrate includes at least two image sensing areas and the periphery circuit region around image sensing area, each image sensing area is provided with the multiple pixels being arranged in array, and periphery circuit region is provided with line-scan circuit, and the pixel in each image sensing area shares line-scan circuit.Using the technical solution of the embodiment of the present application, using same wafer as substrate, it designs on this substrate and forms the imaging sensor for more taking the photograph system, same line-scan circuit can be shared by least two image sensing areas, area of the periphery circuit region in substrate can be reduced, in turn, it can reduce the size of imaging sensor and camera module.
Description
Technical field
The invention relates to semiconductor device art more particularly to a kind of imaging sensors, camera module and electricity
Sub- equipment.
Background technique
Electronic equipment with multiple camera modules can control different cameras respectively and execute different function, thus
So that the picture captured by camera has more contents and is more clear, imaging is exquisiter, color is more bright-coloured.
However, the systems of taking the photograph with multiple camera modules are usually to pass through multiple camera modules more in the related technology
What bracket assembled obtained.Fig. 1 is traditional double structural schematic diagrams for taking the photograph system, as shown in Figure 1, being taken the photograph by bracket 130 by first
Take the photograph system as head mould group 10 and second camera mould group 20 are assembled into more.Each camera module include imaging sensor (140,
150) and lens assembly (110,120), wherein lens assembly (110,120) includes camera lens, microscope base and motor.Imaging sensor
(140,150) are welded on wiring board 160, and the imaging area (141,151) on imaging sensor (140,150) is located at camera lens
The upright projection region of (110,120).Due to the assembling mode using mould group rank, the position that may be unable to satisfy between mould group is raw
It produces, stated accuracy requirement.Such as binocular ranging, image co-registration scene, the deviation of small distance or angle all can be to most terminating
Fruit causes biggish deviation.
Summary of the invention
The embodiment of the present application provides a kind of imaging sensor, camera module and electronic equipment, can optimize the relevant technologies
In the design schemes for taking the photograph system more.
In a first aspect, the embodiment of the present application provides a kind of imaging sensor, including substrate, the substrate includes at least two
A image sensing area and around the periphery circuit region of described image sensing unit, each described image sensing unit is provided in array
Multiple pixels of arrangement, the periphery circuit region are provided with line-scan circuit, and the pixel of each described image sensing unit shares described
Line-scan circuit.
Second aspect, the embodiment of the present application also provides a kind of camera module, which includes such as above-mentioned the
Imaging sensor described in one side.
The third aspect, the embodiment of the present application also provides a kind of electronic equipment, which has such as above-mentioned second party
Camera module described in face.
The embodiment of the present application provides a kind of image sensor package, includes at least two images in the substrate of imaging sensor
The periphery circuit region in sensing unit and image sensing area, each image sensing area are provided with the multiple pixels being arranged in array, week
Side circuit region is provided with line-scan circuit, and the pixel in each image sensing area shares line-scan circuit.Pass through the embodiment of the present application
Technical solution is designed on this substrate and is formed the imaging sensor for more taking the photograph system using same wafer as substrate, realized logical
The stage for crossing semiconductors manufacture imaging sensor completes the location positions for taking the photograph system more, improves the assembly precision for more taking the photograph system.
Moreover, at least two image sensing areas can share same line-scan circuit, realized by line-scan circuit at least two images
The turntable driving of sensing unit, reduces the number of line-scan circuit, so that area of the periphery circuit region in substrate is reduced, in turn,
It can reduce the size of imaging sensor and camera module.Share line-scan circuit can be improved the consistent of image effect simultaneously
Property, it avoids having differences the case where causing the image effect of final output to have differences because of amplifying circuit of analog signal, saves and adjust
Whole image effect makes the effect consistent time, thus, shorten the processing time of image data.
Detailed description of the invention
Fig. 1 is traditional double structural schematic diagrams for taking the photograph system；
Fig. 2 is a kind of structural block diagram of imaging sensor provided by the embodiments of the present application；
Fig. 3 is the schematic top plan view of another imaging sensor provided by the embodiments of the present application；
Fig. 4 is the schematic top plan view of another imaging sensor provided by the embodiments of the present application；
Fig. 5 is the structural block diagram of another imaging sensor provided by the embodiments of the present application；
Fig. 6 is the structural block diagram of another imaging sensor provided by the embodiments of the present application；
Fig. 7 is the structural block diagram of another imaging sensor provided by the embodiments of the present application；
Fig. 8 is the schematic top plan view of another imaging sensor provided by the embodiments of the present application；
Fig. 9 is the structural block diagram of another imaging sensor provided by the embodiments of the present application；
Figure 10 is the structural block diagram of another imaging sensor provided by the embodiments of the present application；
Figure 11 is a kind of structural schematic diagram of camera module provided by the embodiments of the present application；
Figure 12 is a kind of structural block diagram of smart phone provided by the embodiments of the present application.
Specific embodiment
The application is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the application, rather than the restriction to the application.It also should be noted that in order to just
Part relevant to the application is illustrated only in description, attached drawing rather than entire infrastructure.
It should be noted that due to the continuous improvement of semiconductor technology and technological level, imaging sensor (Image
Sensor) as a kind of elemental device of acquisition of vision information, because of the expansion of its acquisition, the conversion and visual performance that are able to achieve information
Exhibition provides intuitive, multi-level, abundant in content visible image information, and has and be more and more widely used.It answers in the related technology
It mainly include charge-coupled device (CCD) imaging sensor and complementary metal oxide with most commonly used solid state image sensor
Semiconductor (CMOS) imaging sensor.The imaging sensor of the embodiment of the present application can be the image sensing of above two type
Device.
Including at least two image sensing areas and around image sensing area on the semiconductor base of the imaging sensor
Periphery circuit region, each image sensing area are provided with the multiple pixels being arranged in array.It should be noted that the embodiment of the present application
According at least two image sensing area of ordered pair when setting multiple pixel carry out sequence readings, and each image sensing area is adopted
The mode read by column with progressive scan, thereby guarantees that equal by the corresponding picture element signal of all pixels point in a pixel sensing unit
The picture element signal in one other pixel sensing unit is just read after being read.It should be noted that each pixel sensing unit is image
Imaging area, in multiple pixels at array arrangement, contain x*y (row * column) imaging pixel, i.e. pixel, each pixel
Photoperceptivity is all had, corresponding analog electronic signal can be converted optical signals to.
Periphery circuit region is provided with line-scan circuit, and the pixel in each image sensing area shares line-scan circuit.Each image passes
Multiple pixels of sensillary area can be connect by switching tube (triode or field-effect tube) with the line-scan circuit, and line scan signals are exported
To multiple pixels in each image sensing area.It is understood that quantity and each figure of the line scan signals of line-scan circuit output
As the line number of multiple pixels of sensing unit is identical, the first row pixel in the first row line and first image sensing area and second
The first row pixel in image sensing area connects, the second row pixel and second of the second line scan signals and first image sensing area
The second row pixel in a image sensing area connects ... ..., the line n pixel of line n scanning signal and first image sensing area
It is connected with the line n pixel in second image sensing area.Wherein, the value of n is determined by the line number of the pixel in each image sensing area.
Optionally, line-scan circuit exports line scan signals according to work in series mode, realizes at least two image sensing of sequential scan
Multiple pixels in area.
It should be noted that multiple sensitive chips can be formed on same wafer using semiconductor device fabrication processes.
Wherein, sensitive chip includes at least two image sensing areas and the periphery circuit region around image sensing area.It can be to avoid phase
The problem of taking the photograph big system mould group grade assembly difficulty, hardly possible debugging in the technology of pass more.In the related technology, take the photograph the camera module of system more
A plurality of lenses are corresponded to for multiple sensitive chips, each camera is shared with function independent, between each other without function
Part, since chip is located on respective wiring board, the placed angle of each chip, gradient are variant, can increase
Add the difficulty of downstream equipment and debugging.And the embodiment of the present application forms multiple images sensing unit in a wafer, each figure
As sensing unit can correspond to a shooting part, such as each image sensing area is correspondingly arranged a camera lens, and then constitutes take the photograph more
The camera module of system, in wafer design photosensitive area circuit when, can pass through design adjustment at least two images pass
Then the position of sensillary area forms at least two image sensing areas and periphery electricity by semiconductor technology in the same wafer
Road, in this way, the position (such as angle, distance etc.) in image sensing area passes through during forming at least two image sensing areas
Semiconductor technology is formed, and the precision of semiconductor technology is generally higher, in the micron-scale not, can satisfy production site between mould group,
Stated accuracy requirement, improves the stated accuracy of different images sensing unit.
In order to make it easy to understand, introducing the structure of imaging sensor by taking cmos image sensor as an example.Fig. 2 is that the application is implemented
A kind of structural block diagram for imaging sensor that example provides.As shown in Fig. 2, imaging sensor includes substrate, substrate can be same
Wafer includes Liang Ge image sensing area, respectively the first image sensing area 201 and the second image in the substrate of imaging sensor
Sensing unit 202.Process in production the first image sensing area 201 and the second image sensing area 202 is passed by the first image of setting
Flatness, relative deviation and relative tilt angle etc. between sensillary area 201 and the second image sensing area 202 realize imaging sensor
The location positions for taking the photograph system more.
Imaging sensor further includes around the periphery circuit region of image sensing area (including 201 and 202).Periphery circuit region is set
Be equipped with first row reading circuit 203, the first column select circuit 204, secondary series reading circuit 205, the second column select circuit 206,
First analog signal amplifier 207, the first analog-digital converter 208, the first image processor 209, the first input/output interface
210, the second analog signal amplifier 211, the second analog-digital converter 212, the second image processor 213 and the second input and output
Interface 214.Each image sensing area is provided with the multiple pixels being arranged in array, and periphery circuit region is provided with line-scan circuit
215, the pixel in each image sensing area shares line-scan circuit 215.First row reading circuit 203 and the first image sensing area 201
Corresponding, the output end of first row reading circuit 203 is connect with the input terminal of the first analog signal amplifier 207, the first simulation letter
The output end of number amplifier 207 is connect with the first analog-digital converter 208, the output end and the first shadow of the first analog-digital converter 208
As the connection of processor 209, the output end of the first image processor 209 is connect with the first input/output interface 210.Secondary series is read
Circuit 205 is corresponding with the second image sensing area 202, the output end of secondary series reading circuit 205 and the second analog signal amplifier
211 input terminal connection, the output end of the second analog signal amplifier 211 are connect with the second analog-digital converter 212, the second modulus
The output end of converter 212 is connect with the second image processor 213, the output end of the second image processor 213 and the second input
Output interface 214 connects.
When detecting camera open command, processor (such as CPU) outputs control signals to the timing of imaging sensor
Control circuit, so that sequential control circuit exports scan control pulse to line-scan circuit 215, and, output column selection control letter
Number to the first column select circuit 204.Because the scanning signal that line-scan circuit 215 exports exports line by line, therefore, first row reads electricity
Road 203 starts the analog signal for reading the first row pixel in the first image sensing area 201 by column.Illustratively, line-scan circuit
215 output scan control pulses export scanning signal to the first row pixel in the first image sensing area 201 in first time period,
It is connected with realizing with the field-effect tube in the pixel of the first row in the first image sensing area 201.And in the first time period, the
One column select circuit 204 controls the column bus 216 and first row reading circuit 203 of signal gating column to be read according to column selection, i.e.,
First column select circuit 204 exports Continuity signal to the field-effect tube between column bus 216 and first row reading circuit 203, with
It is respectively turned on each field-effect tube, realizes the picture element signal read on column bus 216 one by one, and the picture element signal of reading is exported
To the first analog signal amplifier 207, the reading of the analog signal of the first row pixel in the first image sensing area 201 is completed.The
One analog signal amplifier 207 is used to amplify the picture element signal that the first image sensing area 201 exports processing, and will amplification
Picture element signal afterwards is exported to the first corresponding analog-digital converter 208.First analog-digital converter 208 receives the first simulation letter
The corresponding picture element signal in amplified first image sensing area 201 that number amplifier 207 exports, by the amplified picture element signal
It is converted to digital signal, output to the first image processor 209 connecting with the first analog-digital converter 208.First image processing
Device 209 receives the digital signal of the first analog-digital converter 208 output, believes according to the chip definition function of imaging sensor number
Default processing number is carried out, treated, and image data is exported according to certain format or specification by the first input/output interface 210
To back-end platform.
After the picture element signal of last column of the first row pixel for having read the first image sensing area 201, line-scan circuit
215 output scan control pulses export scanning signal to the second row pixel in the first image sensing area 201, to realize and the first figure
As the field-effect tube conducting that the pixel of the second row of sensing unit 201 connects, and the picture element signal on column bus 216 is read one by one.
The rest may be inferred, until reading the picture element signal for completing last column pixel of last line in the first image sensing area 201.
While the process for reading the picture element signal of the first row pixel in the first image sensing area 201, processor is (such as
CPU the sequential control circuit of imaging sensor) is output control signals to, so that sequential control circuit output scan control pulse is extremely
Line-scan circuit 215, and, output column selection controls signal to the second column select circuit 206.It is exported because of line-scan circuit 215
Scanning signal exports line by line, and therefore, secondary series reading circuit 205 starts the first row for reading the second image sensing area 202 by column
The analog signal of pixel.Secondary series reading circuit 205 starts the first row pixel for reading the second image sensing area 202 by column simultaneously
Analog signal.Illustratively, line-scan circuit 215 exports scan control pulse within a period to the second image sensing area
202 the first row pixel exports scanning signal, to realize and the field-effect in the pixel of the first row in the second image sensing area 202
Pipe conducting.And during this period of time, the second column select circuit 206 controls the column bus of signal gating column to be read according to column selection
216 export Continuity signal to column bus 216 and secondary series and read with secondary series reading circuit 205, i.e. the second column select circuit 206
Field-effect tube between circuit 205 realizes the pixel letter read on column bus 216 one by one to be respectively turned on each field-effect tube
Number, and the picture element signal of reading is exported to the second analog signal amplifier 211, complete the first of the second image sensing area 202
The reading of the analog signal of row pixel.Second analog signal amplifier 211 is used for the pixel exported to the second image sensing area 202
Signal amplifies processing, and amplified picture element signal is exported to the second corresponding analog-digital converter 212.Second mould
Number converter 212 receives the corresponding pixel in amplified second image sensing area 202 of the second analog signal amplifier 211 output
The amplified picture element signal is converted to digital signal, output to the second shadow connecting with the second analog-digital converter 212 by signal
As processor 213.Second image processor 213 receives the digital signal of the second analog-digital converter 212 output, according to image sensing
The chip definition function of device carries out default processing to digital signal, and treated, and image data passes through according to certain format or specification
Second input/output interface 214 is exported to back-end platform.
It should be noted that including AEC (auto-exposure control), AGC (automatic gain control to the default processing of digital signal
System), AWB (automatic white balance), colour correction, Lens Shading (camera lens shadow correction), Gamma correction, dispel bad point,
Auto Black Level (Automatic Black Level correction) and Auto White Level (automatic white level correction) etc. function
Processing.
After the picture element signal of last column of the first row pixel for having read the second image sensing area 202, line-scan circuit
215 output scan control pulses export scanning signal to the second row pixel in the second image sensing area 202, to realize and the second figure
As the field-effect tube conducting that the second row pixel of sensing unit 202 connects, and the picture element signal on column bus 216 is read one by one.According to
This analogizes, until reading the picture element signal for completing last column pixel of last line in the second image sensing area 201.
By the above process it is found that Liang Ge image sensing area can share a line-scan circuit 215, so as to reduce figure
As area of the sensor perimeter circuit region in substrate, in turn, the size of imaging sensor and camera module can reduce.
The technical solution of the embodiment of the present application provides a kind of imaging sensor, includes at least two in the substrate of imaging sensor
The periphery circuit region in a image sensing area and image sensing area, each image sensing area are provided with the multiple pictures being arranged in array
Element, periphery circuit region are provided with line-scan circuit, and the pixel in each image sensing area shares line-scan circuit.Implemented by the application
The technical solution of example is designed on this substrate and is formed the imaging sensor for more taking the photograph system using same wafer as substrate, realized
It completes the location positions for taking the photograph system in the stage by semiconductors manufacture imaging sensor more, improves the assembly essence for more taking the photograph system
Degree.Moreover, at least two image sensing areas can share same line-scan circuit, realized by line-scan circuit at least two figures
As the turntable driving of sensing unit, the number of line-scan circuit is reduced, so that area of the periphery circuit region in substrate is reduced, into
And it can reduce the size of imaging sensor and camera module.Share line-scan circuit can be improved image effect simultaneously
Consistency avoids having differences the case where causing the image effect of final output to have differences because of amplifying circuit of analog signal, section
Saving adjustment image effect makes the effect consistent time, thus, shorten the processing time of image data.
Based on the above technical solution, Fig. 3 is the vertical view of another imaging sensor provided by the embodiments of the present application
Schematic diagram, Fig. 4 are the schematic top plan views of another imaging sensor provided by the embodiments of the present application.As shown in Figure 3 and Figure 4, row
Scanning circuit 215 is disposed therein the side in an image sensing area.
Specifically, as shown in figure 3, being provided with the first image sensing area 201 and the second image sensing area on same wafer 30
202, side of the first image sensing area 201 far from the second image sensing area 202 is arranged in line-scan circuit 215.Alternatively, as schemed
Shown in 4, side of the second image sensing area 202 far from the first image sensing area 202 is arranged in line-scan circuit 215.
On the basis of above-mentioned each technical solution, Fig. 5 is the knot of another imaging sensor provided by the embodiments of the present application
Structure block diagram, Fig. 6 is the structural block diagram of another imaging sensor provided by the embodiments of the present application, as shown in Fig. 5 Fig. 6, at least one
The line in a image sensing area is made of the line extension in one of image sensing area.
Specifically, as shown in figure 5, line-scan circuit 215 is arranged in the first image sensing area 201 far from the second image sensing
The side in area 202.Using semiconductor device fabrication processes when forming sensitive chip on same wafer, the second image sensing area
202 line can be extended by the line in the first image sensing area 201 to be constituted.Alternatively, as shown in fig. 6, line-scan circuit 215 is set
It sets in side of the second image sensing area 202 far from the first image sensing area 202, the line in the first image sensing area 201 can be with
It is made of the extension of the line in the second image sensing area 202.It is possible thereby to reduce the process of semiconductor device fabrication processes.
Fig. 7 is the structural block diagram of another imaging sensor provided by the embodiments of the present application.As shown in fig. 7, at least one
The alignment in image sensing area is made of the alignment extension in one of image sensing area.
Specifically, the alignment 216 in the second image sensing area 202 can be extended by the alignment 216 in the first image sensing area 201
It constitutes or the alignment 216 in the first image sensing area 201 can be made of the extension of the alignment 216 in the second image sensing area 202.
Illustratively, during manufacture craft, 216 He of alignment in the first image sensing area 201 can be formed using etch process
The alignment 216 in the second image sensing area 202, it is possible to reduce the process of manufacture craft.
Fig. 8 is the schematic top plan view of another imaging sensor provided by the embodiments of the present application.As shown in figure 8, row scanning
The region between the first image sensing area 201 and the second image sensing area 202 can also be arranged in circuit 215.It can be sufficiently sharp
It is further to reduce imaging sensor and camera mould so as to reduce the requirement to area of base with the space in substrate
The size of group.
Alternatively, analog signal amplifier and analog-digital converter at least one of be set between adjacent image sensing unit
Region.
Imaging sensor does not need bracket between at least two image sensing areas in substrate using same wafer as substrate
Support, therefore periphery circuit region can be set in the region between Liang Ge image sensing area, illustratively, simulation letter can be set
Number amplifier or analog-digital converter, or analog signal amplifier and analog-digital converter are set simultaneously, make full use of at least two
Region between image sensing area in turn, can reduce imaging sensor and take the photograph so as to reduce the requirement to area of base
As the size of head mould group.Alternatively, increasing the area of photosensitive region, Ke Yiti on the basis of keeping image sensor size constant
The quality of height shooting image.
Fig. 9 is the structural block diagram of another imaging sensor provided by the embodiments of the present application.As shown in figure 9, each image
Sensing unit is provided with a plurality of line 218 and a plurality of alignment 216, and multiple pixels are connected to corresponding line 218 and alignment 216；Row
Scanning circuit 215 includes multiple output end out, and a plurality of line 218 in image sensing area is scanned by switch unit 217 and row
Multiple output end out of circuit 215 are correspondingly connected with.
Specifically, as shown in figure 9, the output end out of line-scan circuit 215 passes through switch unit 217 and graphical sensory area
Interior a plurality of line 217 is correspondingly connected with, and the column bus 216 in the first image sensing area 201 and the second image sensing area 202 is corresponding to be connected
It connects.At this point, a column reading circuit 220, column select circuit 221, analog signal amplifier has can be set in periphery circuit region
222, analog-digital converter 223, image processor 224 and input/output interface 225, same column at least two image sensing areas
Alignment 216 is connected to each other and is connected to column reading circuit 220, the output end and analog signal amplifier of column reading circuit 220
222 input terminal connection, the output end of analog signal amplifier 222 are connect with analog-digital converter 223, analog-digital converter 223
Output end is connect with image processor 224, and the output end of image processor 224 is connect with input/output interface 225.
It should be noted that the column bus 216 in the first image sensing area 201 and the second image sensing area 202 is correspondingly connected with
Meaning can be the first image sensing area 201 first column bus 216 and first of the second image sensing area 202 column it is total
Line 216 connects, second column bus 216 in the first image sensing area 201 and second column bus in the second image sensing area 202
216 connections, the 3rd column bus 216 in the first image sensing area 201 and the 3rd column bus 216 in the second image sensing area 202
Connection, and so on.The mode of connection can be the connection that column bus is formed on the substrate using etch process.
When detecting camera open command, processor (such as CPU) outputs control signals to the timing of imaging sensor
Control circuit, so that sequential control circuit exports scan control pulse to line-scan circuit 215, and, output column selection control letter
Number to column select circuit 221.Switch unit 217 controls output end out and the first image sensing area 201 of line-scan circuit 215
Line 218 connect, or connect with the line in the second image sensing area 202.When switch unit 217 realizes line-scan circuit
215 with the line 218 in the first image sensing area 201 when connecting, and line-scan circuit 215 exports scan control pulse in a period
The first row pixel in introversive first image sensing area 201 exports scanning signal, to realize first with the first image sensing area 201
The field-effect tube conducting of capable pixel connection.And during this period of time, column select circuit 221 is waited for according to column selection control signal gating
The column bus 216 and column reading circuit 220 of column are read, i.e. column select circuit 221 exports Continuity signal to column bus 216 and column and reads
Field-effect tube between sense circuit 220 realizes the pixel read on column bus 216 one by one to be respectively turned on each field-effect tube
Signal, and the picture element signal of reading is exported to analog signal amplifier 222, complete the first row in the first image sensing area 201
The reading of the analog signal of pixel.The rest may be inferred, completes last column of last line in the first image sensing area 201 until reading
The picture element signal of pixel.The picture element signal that first analog signal amplifier 207 is used to export the first image sensing area 201 carries out
Enhanced processing, and amplified picture element signal is exported to the first corresponding analog-digital converter 208.First analog-digital converter
208 receive the corresponding picture element signal in amplified first image sensing area 201 of the first analog signal amplifier 207 output, will
The amplified picture element signal is converted to digital signal, output to the first image processing connecting with the first analog-digital converter 208
Device 209.First image processor 209 receives the digital signal of the first analog-digital converter 208 output, according to the core of imaging sensor
Piece defined function carries out default processing to digital signal, and treated, and image data is defeated by first according to certain format or specification
Enter the output of output interface 210 to back-end platform.
When switch unit 217 realizes that line-scan circuit 215 is connect with the line 218 in the second image sensing area 202, row is swept
Scanning circuit 215 exports scan control pulse and exports scanning to the first row pixel in the second image sensing area 202 within a period
Signal, to realize that the field-effect tube connected with the pixel of the first row in the second image sensing area 202 is connected.And in the period
Interior, column select circuit 221 controls the column bus 216 and column reading circuit 220, i.e. column selection of signal gating column to be read according to column selection
Select circuit 221 export Continuity signal to the field-effect tube between column bus 216 and column reading circuit 220, it is each to be respectively turned on
Field-effect tube realizes the picture element signal read on column bus 216 one by one, and the picture element signal of reading is exported to analog signal and is put
Big device 222, completes the reading of the analog signal of the first row pixel in the second image sensing area 202.The rest may be inferred, until having read
At the picture element signal of last column pixel of last line in the second image sensing area 202.Second analog signal amplifier 211 is used for
Processing amplified to the picture element signal of the second image sensing area 202 output, and by amplified picture element signal export to its
Corresponding second analog-digital converter 212.Second analog-digital converter 212 receives the amplification of the second analog signal amplifier 211 output
The amplified picture element signal is converted to digital signal by the corresponding picture element signal in the second image sensing area 202 afterwards, and output is extremely
The second image processor 213 being connect with the second analog-digital converter 212.Second image processor 213 receives the second analog-to-digital conversion
The digital signal that device 212 exports carries out default processing to digital signal according to the chip definition function of imaging sensor, after processing
Image data according to certain format or specification by the output of the second input/output interface 214 to back-end platform.
By the above process it is found that Liang Ge image sensing area can share a line-scan circuit 215, while at least two figures
As the column bus of sensing unit is correspondingly connected with, column bus is read with column select circuit and column electric respectively by transistor or field-effect tube
Road connection realizes that Liang Ge image sensing area shares column select circuit and column reading circuit.To reduce periphery circuit region in substrate
On area, and then can reduce the size of imaging sensor and camera module.Alternatively, keeping image sensor size not
The area for increasing photosensitive region on the basis of change, can be improved the quality of shooting image.
Based on the above technical solution, Figure 10 is the structure of another imaging sensor provided by the embodiments of the present application
Block diagram.As shown in Figure 10, the pixel multiplexing input/output interface at least two image sensing areas.Input/output interface with simultaneously
It is electrically connected with the first image processor 209 and the second image processor 213, the first image processor 209 and the second image processing
Device 213 is used to carry out the digital signal of input default processing, obtains image data, and increase sensing unit mark for image data
Know.Input/output interface is used to carry out Format adjusting to image data respectively according to setting format, and output format is adjusted
Image data and sensing unit are identified to back-end platform.For example, the first image processor 209 exports the first analog-digital converter 208
Digital signal carry out image procossing, obtain image processing, for the image processing add sensing unit mark, to indicate the image number
It is determined according to according to by the picture element signal that the first image sensing area 201 is read.Second image processor 216 is to the second analog-digital converter
The digital signal of 212 outputs carries out image procossing, obtains image processing, sensing unit mark is added for the image processing, to indicate
The image data is determined according to the picture element signal read by the second image sensing area 202.The advantages of this arrangement are as follows passing through
One image processor 209 and the second image processor 213 can also share an I/O interface circuit, can further decrease core
Chip size.
Based on the above technical solution, the alignment at least one image sensing area is by one of image sensing area
Alignment extend constitute.0 is continued to refer to figure 1, as shown in Figure 10, the alignment 216 in the second image sensing area 202 can be by the first figure
As the alignment 216 that the alignment 216 of sensing unit 201 extends composition or the first image sensing area 201 can be by the second image sensing
The alignment 216 in area 202, which extends, to be constituted.Illustratively, during manufacture craft, the can be realized simultaneously using etch process
The alignment 216 of the alignment 216 in one image sensing area 201 and the second image sensing area 202, it is possible to reduce the process of manufacture craft.
Based on the above technical solution, analog signal amplifier and analog-digital converter at least one of equally may be used
With the region being set between adjacent image sensing unit.The region between at least two image sensing areas is made full use of, so as to
Requirement with reduction to area of base can reduce the size of imaging sensor and camera module in turn.Alternatively, keeping
The area for increasing photosensitive region on the basis of image sensor size is constant, can be improved the quality of shooting image.
The embodiment of the present application also provides a kind of camera module, including such as imaging sensor provided by the above embodiment, real
It is now made up of one piece of sensitive chip with multiple photosensitive regions and takes the photograph system more.The camera module may include have it is above-mentioned
The multiple rear camera mould groups and/or multiple front camera mould groups for the imaging sensor that embodiment provides.The camera mould
Group includes：
The imaging sensor of structure is recorded with above-described embodiment, which is welded on wiring board.Wherein, until
Shao Liangge image sensing area (i.e. imaging area), since the precision of manufacture of semiconductor is significantly larger than module group procedure precision, in same base
Two or more pixel arrays are prepared on bottom forms multiple photosensitive regions, it can be by chip flatness, at least two photosensitive regions
Relative deviation, relative tilt angle angularly improves by grade to micron order.
Camera lens, it is consistent with the quantity in image sensing area of the imaging sensor.Multiple lens form mirror by microscope base fixation
Head, camera lens, microscope base and voice coil motor constitute lens assembly, and lens assembly is fixed by the bracket is more in take the photograph of composition on wiring board
System.It is made of it should be noted that taking the photograph system more and can be multiple rear camera mould groups and/or multiple front camera mould groups
Camera system.
Figure 11 is a kind of structural schematic diagram of camera module provided by the embodiments of the present application.As shown in figure 11, the camera shooting
Head mould group include：First lens assembly 710, the second lens assembly 720, bracket 730 and imaging sensor 740.Wherein, the first mirror
Head assembly 710 includes the first camera lens, the first microscope base and the first motor, realizes the first camera lens under the drive of the first motor first
It is slided in lens barrel, to focus；Second lens assembly 720 includes the second camera lens, the second microscope base and the second motor, realizes second
Camera lens slides in the second lens barrel under the drive of the second motor, to focus.Imaging sensor 740 is passed including the first image
Sensillary area 741 and the second image sensing area 742, circuit structure is as shown in above-described embodiment, and details are not described herein again.And image sensing
Device 740 is welded on wiring board 750, and the size of wiring board 750 is greater than the size of imaging sensor 740, bracket 730 and wiring board
750 are fixedly connected, and constitute the encapsulating structure of camera module.
Optionally, the first lens assembly 710 further includes the first infrared fileter, for filtering out through the acquisition of the first camera lens
Infrared signal.Second lens assembly 720 further includes the second infrared fileter, for filtering out through the infrared of the second camera lens acquisition
Optical signal.
Optionally, the first infrared fileter can also be separately positioned with the first lens assembly 710, the second infrared light optical filter
It can also be separately positioned with the second lens assembly 720.
The embodiment of the present application also provides a kind of electronic equipment, has camera module provided by the embodiments of the present application.Wherein,
Electronic equipment can have the end of camera for smart phone, PAD (tablet computer), laptop and intelligent wearable device etc.
End.Illustrate the structure of electronic equipment by taking smart phone as an example, Figure 12 is a kind of knot of smart phone provided by the embodiments of the present application
Structure block diagram.As shown in figure 12, which may include：Memory 801, central processing unit (Central Processing
Unit, CPU) 802 (also known as processors, hereinafter referred to as CPU), Peripheral Interface 803, RF (Radio Frequency, radio frequency) circuit
805, voicefrequency circuit 806, loudspeaker 811, touch screen 812, take the photograph system 813, power management chip 808, input/output (I/ more
O) subsystem 809, other input/control devicess 810 and outside port 804, these components are total by one or more communications
Line or signal wire 807 communicate.
Memory 801, the memory 801 can be accessed by CPU802, Peripheral Interface 803 etc., and the memory 801 can
It can also include nonvolatile memory to include high-speed random access memory, such as one or more disk memory,
Flush memory device or other volatile solid-state parts.
The peripheral hardware that outputs and inputs of equipment can be connected to CPU802 and deposited by Peripheral Interface 803, the Peripheral Interface 803
Reservoir 801.
I/O subsystem 809, the I/O subsystem 809 can be by the input/output peripherals in equipment, such as touch screen 812
With other input/control devicess 810, it is connected to Peripheral Interface 803.I/O subsystem 809 may include 8091 He of display controller
For controlling one or more input controllers 8092 of other input/control devicess 810.Wherein, one or more input controls
Device 8092 processed receives electric signal from other input/control devicess 810 or sends electric signal to other input/control devicess 810,
Other input/control devicess 810 may include physical button (push button, rocker buttons etc.), dial, slide switch, behaviour
Vertical pole clicks idler wheel.It is worth noting that input controller 8092 can with it is following any one connect：Keyboard, infrared port,
The indicating equipment of USB interface and such as mouse.
Touch screen 812, the touch screen 812 are the input interface and output interface between user terminal and user, can
It is shown to user depending on output, visual output may include figure, text, icon, video etc..
Display controller 8091 in I/O subsystem 809 receives electric signal from touch screen 812 or sends out to touch screen 812
Electric signals.Touch screen 812 detects the contact on touch screen, and the contact that display controller 8091 will test is converted to and is shown
The interaction of user interface object on touch screen 812, i.e. realization human-computer interaction, the user interface being shown on touch screen 812
Object can be the icon of running game, the icon for being networked to corresponding network etc..It is worth noting that equipment can also include light
Mouse, light mouse are the extensions for the touch sensitive surface for not showing the touch sensitive surface visually exported, or formed by touch screen.
RF circuit 805 is mainly used for establishing the communication of mobile phone Yu wireless network (i.e. network side), realizes mobile phone and wireless network
The data receiver of network and transmission.Such as transmitting-receiving short message, Email etc..Specifically, RF circuit 805 receives and sends RF letter
Number, RF signal is also referred to as electromagnetic signal, and RF circuit 805 converts electrical signals to electromagnetic signal or electromagnetic signal is converted to telecommunications
Number, and communicated by the electromagnetic signal with communication network and other equipment.RF circuit 805 may include for executing
The known circuit of these functions comprising but it is not limited to antenna system, RF transceiver, one or more amplifiers, tuner, one
A or multiple oscillators, digital signal processor, CODEC (COder-DECoder, coder) chipset, user identifier mould
Block (Subscriber Identity Module, SIM) etc..
Voicefrequency circuit 806 is mainly used for receiving audio data from Peripheral Interface 803, which is converted to telecommunications
Number, and the electric signal is sent to loudspeaker 811.
Loudspeaker 811 is reduced to sound for mobile phone to be passed through RF circuit 805 from the received voice signal of wireless network
And the sound is played to user.
Power management chip 808, the hardware for being connected by CPU802, I/O subsystem and Peripheral Interface are powered
And power management.
System 813, including multiple rear camera mould groups and/or multiple front camera mould groups are taken the photograph, for obtaining mesh more
Mark the image data of the different perspectives of object, different depth of field etc., and by Peripheral Interface 803 be transmitted to memory 801 into
Row storage, in case CPU802 is called.Multiple photosensitive regions due to more taking the photograph system are formed on the same substrate, and can be with common portion
Divide integrated circuit, thus, the size of camera module is smaller than the camera module prepared by separate type sensitive chip, reduces more
Take the photograph the volume of system.
It should be understood that illustrating the example that smart phone 800 is only electronic equipment, and smart phone 800
It can have than shown in the drawings more or less component, can combine two or more components, or can be with
It is configured with different components.Various parts shown in the drawings can include one or more signal processings and/or dedicated
It is realized in the combination of hardware, software or hardware and software including integrated circuit.
Note that above are only the preferred embodiment and institute's application technology principle of the application.It will be appreciated by those skilled in the art that
The application is not limited to specific embodiment described here, be able to carry out for a person skilled in the art it is various it is apparent variation,
The protection scope readjusted and substituted without departing from the application.Therefore, although being carried out by above embodiments to the application
It is described in further detail, but the application is not limited only to above embodiments, in the case where not departing from the application design, also
It may include more other equivalent embodiments, and scope of the present application is determined by the scope of the appended claims.
Claims (12)
1. a kind of imaging sensor, which is characterized in that including substrate, the substrate includes at least two image sensing areas and encloses
Around the periphery circuit region of described image sensing unit, each described image sensing unit is provided with the multiple pixels being arranged in array, institute
It states periphery circuit region and is provided with line-scan circuit, the pixel of each described image sensing unit shares the line-scan circuit.
2. imaging sensor according to claim 1, which is characterized in that each described image sensing unit is provided with a plurality of row
Line and a plurality of alignment, multiple pixels are connected to corresponding line and alignment；The line-scan circuit includes multiple output ends, described
A plurality of line in image sensing area is correspondingly connected with by multiple output ends of switch unit and the line-scan circuit.
3. imaging sensor according to claim 2, which is characterized in that the periphery circuit region is additionally provided with a column and reads
Sense circuit, analog signal amplifier and analog-digital converter, the alignment of same column is each other at least two described image sensing units
Connect and be connected to the column reading circuit, the output end of the column reading circuit and the input terminal of the analog signal amplifier
Connection, the output end of the analog signal amplifier connect with the analog-digital converter, and the analog signal amplifier is used for pair
The picture element signal amplifies processing, and amplified picture element signal is exported to corresponding analog-digital converter.
4. imaging sensor according to claim 1, which is characterized in that the line-scan circuit is disposed therein an institute
State the side in image sensing area.
5. imaging sensor according to claim 4, which is characterized in that the line of at least one described image sensing unit by
Line in one of described image sensing unit, which extends, to be constituted.
6. imaging sensor according to claim 1, which is characterized in that the line-scan circuit is set to adjacent image biography
Region between sensillary area.
7. imaging sensor according to claim 1, which is characterized in that the periphery circuit region is additionally provided at least two
Column reading circuit, at least one analog signal amplifier and analog-digital converter, at least two column reading circuits and at least two
A described image sensing unit corresponds, and the column reading circuit is connected with the alignment in corresponding described image sensing unit, institute
The output end for stating column reading circuit is connect with the input terminal of the analog signal amplifier, the output of the analog signal amplifier
End is connect with the analog-digital converter, and the analog signal amplifier is used to amplify the picture element signal processing, and will
Amplified picture element signal is exported to corresponding analog-digital converter.
8. imaging sensor according to claim 3 or 7, which is characterized in that the column of at least one described image sensing unit
Line is made of the alignment extension in one of described image sensing unit.
9. imaging sensor according to claim 3 or 7, which is characterized in that the analog signal amplifier and the mould
At least one of number converter is set to the region between two neighboring described image sensing unit.
10. imaging sensor according to claim 3 or 7, which is characterized in that the periphery circuit region is additionally provided with image
Processor and input/output interface, and input/output interface described in the pixel multiplexing at least two image sensing area；
The image processor is connect with the analog-digital converter, for carrying out default processing to the digital signal of input, is obtained
Image data, and increase sensing unit mark for the image data；
The input/output interface is connect with the image processor, for according to setting format respectively to the image data into
Row format adjustment, and output format image data adjusted and sensing unit mark.
11. a kind of camera module, which is characterized in that including the imaging sensor as described in any one of claims 1 to 10.
12. a kind of electronic equipment, which is characterized in that the electronic equipment has camera module as claimed in claim 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810965950.6A CN108833760A (en) | 2018-08-23 | 2018-08-23 | A kind of imaging sensor, camera module and electronic equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810965950.6A CN108833760A (en) | 2018-08-23 | 2018-08-23 | A kind of imaging sensor, camera module and electronic equipment |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003034714A1 (en) * | 2001-10-15 | 2003-04-24 | Nikon Corporation | Solid-state image pickup device |
| US20090051793A1 (en) * | 2007-08-21 | 2009-02-26 | Micron Technology, Inc. | Multi-array sensor with integrated sub-array for parallax detection and photometer functionality |
-
2018
- 2018-08-23 CN CN201810965950.6A patent/CN108833760A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003034714A1 (en) * | 2001-10-15 | 2003-04-24 | Nikon Corporation | Solid-state image pickup device |
| US20090051793A1 (en) * | 2007-08-21 | 2009-02-26 | Micron Technology, Inc. | Multi-array sensor with integrated sub-array for parallax detection and photometer functionality |
| TW200922306A (en) * | 2007-08-21 | 2009-05-16 | Micron Technology Inc | Multi-array sensor with integrated sub-array for parallax detection and photometer functionality |
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