CN108807198A - A method of realizing the encapsulation of microwave hybrid integrated circuit radio frequency bare chip - Google Patents
A method of realizing the encapsulation of microwave hybrid integrated circuit radio frequency bare chip Download PDFInfo
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- CN108807198A CN108807198A CN201810517802.8A CN201810517802A CN108807198A CN 108807198 A CN108807198 A CN 108807198A CN 201810517802 A CN201810517802 A CN 201810517802A CN 108807198 A CN108807198 A CN 108807198A
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- radio frequency
- bare chip
- integrated circuit
- frequency bare
- encapsulation
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- 238000005538 encapsulation Methods 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000000576 coating method Methods 0.000 claims abstract description 26
- 230000004224 protection Effects 0.000 claims abstract description 23
- 238000004140 cleaning Methods 0.000 claims abstract description 18
- 238000004806 packaging method and process Methods 0.000 claims abstract description 12
- 239000005416 organic matter Substances 0.000 claims abstract description 6
- 238000001291 vacuum drying Methods 0.000 claims abstract description 5
- 230000004913 activation Effects 0.000 claims abstract description 4
- 238000001548 drop coating Methods 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000011253 protective coating Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 239000011247 coating layer Substances 0.000 claims description 2
- 239000003085 diluting agent Substances 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims description 2
- 238000012360 testing method Methods 0.000 abstract description 26
- 150000003839 salts Chemical class 0.000 abstract description 6
- 230000007613 environmental effect Effects 0.000 abstract description 5
- 238000001994 activation Methods 0.000 abstract description 3
- 230000002159 abnormal effect Effects 0.000 abstract 1
- 238000002474 experimental method Methods 0.000 description 8
- 230000006872 improvement Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 229920000052 poly(p-xylylene) Polymers 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229920006335 epoxy glue Polymers 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000741 silica gel Substances 0.000 description 3
- 229910002027 silica gel Inorganic materials 0.000 description 3
- 229920002379 silicone rubber Polymers 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000005065 mining Methods 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000009938 salting Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 241000228197 Aspergillus flavus Species 0.000 description 1
- 241000228245 Aspergillus niger Species 0.000 description 1
- 241000203233 Aspergillus versicolor Species 0.000 description 1
- 241000894006 Bacteria Species 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- 241001515917 Chaetomium globosum Species 0.000 description 1
- 241001136494 Talaromyces funiculosus Species 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000006902 nitrogenation reaction Methods 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The present invention relates to a kind of methods for realizing the encapsulation of microwave hybrid integrated circuit radio frequency bare chip, it is characterized in that, the radio frequency bare chip packaging method includes radio frequency bare chip, vacuum drying oven, plasma cleaning equipment, the colourless moisture protection coatings of EGC-1700, the radio frequency bare chip is applied to realize radio-frequency performance in microwave hybrid integrated circuit, the vacuum drying oven removes steam for the preceding microwave hybrid integrated circuit of radio frequency bare chip encapsulation, cleaning and activation of the plasma cleaning equipment for radio frequency bare chip encapsulation front surface organic matter, the technical solution is simple, fast, cost is relatively low, it is easily achieved.Pass through the encapsulation of radio frequency bare chip, it solves and solves existing to be encapsulated in after the environmental tests such as damp and hot, mould, salt fog that atmosphere is complicated in microwave hybrid integrated circuit, radio frequency bare chip reliability can not ensure that product index is abnormal, and especially microwave circuit frequency is higher influences bigger problem.
Description
Technical field
The present invention relates to a kind of packaging methods, and in particular to a kind of realization microwave hybrid integrated circuit radio frequency bare chip encapsulation
Method, belong to radio frequency bare chip encapsulation technology field.
Background technology
It is exactly briefly Foundry that encapsulation, which is the process that integrated circuit assembly is radio frequency bare chip final products,
The integrated circuit die produced is placed on the substrate that one piece is played the role of carrying, and pin is extracted, then fixed packaging
As an entirety；
As the core component of radar, in microwave hybrid integrated circuit, to ensure the originals such as circuit loss is small, parasitic parameter is low
Cause, hybrid integrated multi-chip module (MCM) are usually by multiple radio frequency bare chip High Density Packagings on multilayer interconnection substrate, so
Post package is in same shell, to form highdensity microelectronic product, but due to hybrid integrated multi-chip module application environment
Complexity and itself cavity in synthesis atmosphere, the application reliability of radio frequency bare chip is often relatively low.Encapsulation is as a kind of normal
The protected mode seen, the application in radio frequency bare chip is very necessary, needs the case where not influencing radio frequency bare chip electrical property
Under, propose a kind of packaging method of new radio frequency bare chip.At present in microwave hybrid integrated circuit circuit radio frequency naked core in industry
Piece encapsulation usually has following several method：
1. pair microwave hybrid integrated circuit carries out Laser seal welding or parallel soldering and sealing, radio frequency bare chip is encapsulated in Microwave Hybrid
In the shell of integrated circuit, make itself and air exclusion, but the product after laser, parallel soldering and sealing occurs doing over again when reprocessing, cover board is torn open
It except difficulty and can not recycle, maintenanceability is general, and parallel soldering and sealing is suitable only for special material such as Kovar alloy.
2. carrying out " Parylene " vacuum deposition inside pair microwave hybrid integrated circuit, Parylene is a kind of paraxylene
Polymer.Parylene coatings are prepared with unique vacuum vapor deposition technique, " raw in substrate surface by active small molecular
It is long " go out completely conformal polymer thin membrane coat, about 0.1 μm~100 μm of film coating deposition thickness.The complex technical process,
Need special equipment, cost higher.
3. pair microwave hybrid integrated circuit radio frequency bare chip is using epoxy glue, silicon rubber, silica gel etc..But epoxy glue is easily inhaled
Water, silica gel, silicon rubber has higher CTE, while coefficient of elasticity is higher, in environmental temperature experiment, the expansion of colloid itself
The spun gold of bonding can be pulled with stress caused by contraction, causes to fail.Also, the dielectric constant due to above-mentioned glue and loss
Tangent angle and air dielectric difference are larger, are affected to what radio frequency bare chip was brought, cannot be satisfied the requirement on electric performance of product.
Invention content
The purpose of the present invention is provide a kind of simple, quick, cost to provide microwave hybrid integrated circuit radio frequency bare chip
It is relatively low, be easy to the packaging method reprocessed.This method can be applied on the microwave hybrid integrated circuit within Ku wave bands (18GHz),
Encapsulation is smaller to the Index Influence of product, stablizes in each environmental test stage index, the coating on radio frequency bare chip surface will not
Spun gold is caused to pull.Radio frequency bare chip its thermal diffusivity after encapsulation will not be by large effect.
To achieve the goals above, a kind of method for realizing the encapsulation of microwave hybrid integrated circuit radio frequency bare chip of the present invention is
It is achieved：The method for realizing the encapsulation of microwave hybrid integrated circuit radio frequency bare chip, its step are as follows：
1) microwave hybrid integrated circuit containing radio frequency bare chip for needing to encapsulate is got out in ultra-clean chamber；
2) microwave hybrid integrated circuit is positioned in vacuum drying oven and carries out high-temperature baking removal steam；
3) use plasma cleaning equipment to the cleaning of radio frequency bare chip and surface in the microwave hybrid integrated circuit after baking
Activation；
4) the colourless moisture protection coatings of EGC-1700 are used to carry out drop coating encapsulation to radio frequency bare chip surface；
5) it after the solidification of radio frequency bare chip face coat, observes under an electron microscope, to the unencapsulated naked radio frequency of the frequency arrived
It is repaired on bare chip surface.
As an improvement of the present invention, in the step 2), before the encapsulation of radio frequency bare chip, vacuum bakeout should be carried out, is gone
Steam, baking time are directly proportional to the weight of microwave hybrid integrated circuit.
As an improvement of the present invention, in the step 3), before the encapsulation of radio frequency bare chip, plasma cleaning should be carried out,
Wherein nitrogen is used as backfill, first uses oxygen plasma to carry out organic matter to radio frequency bare chip surface and aoxidizes, secondly uses argon
Plasma removes radio frequency bare chip surface organic matter and pad activates, and plasma cleaning contributes to EGC-1700 colourless moisture-proof
Protective coating is sprawled.
As an improvement of the present invention, in the step 3), radio frequency bare chip has been cleaned using plasma cleaning equipment
Cheng Hou, the packaging time away from the colourless moisture protection coatings of EGC-1700 are no more than 2 hours.
As an improvement of the present invention, in the step 4), colourless moisture-proof guarantors of EGC-1700 that radio frequency bare chip uses
It when protecting coating encapsulation, is operated using automatic dispensing machine, selection personality card lancet head internal diameter is 0.09mm, and syringe needle outer diameter is
0.26mm。
As an improvement of the present invention, in the step 4), colourless moisture-proof guarantors of EGC-1700 that radio frequency bare chip uses
Shield coating is carried out using drop coating by the way of, and when drop coating, bayonet syringe needle is 1.5~2mm away from radio frequency bare chip surface distance.
As an improvement of the present invention, the colourless moisture protection coatings of EGC-1700 that radio frequency bare chip uses, using certainly
Dynamic dispenser is operated, and according to the size of chip, setting note drop time, timing quantifies protective coating.
As an improvement of the present invention, the colourless moisture protection coatings of EGC-1700 that radio frequency bare chip uses use drop coating
Mode carry out, coating layer thickness be no more than 1 μm,
As an improvement of the present invention, the colourless moisture protection coatings of EGC-1700 that radio frequency bare chip uses can be used
3MTMNovecTM7100DL diluents are wiped.
The colourless moisture protection coatings of EGC-1700 that radio frequency bare chip uses, are operated using automatic dispensing machine, according to
Outlet pressure is arranged in the size of chip, and the note drop time, timing quantifies protective coating.Subordinate list 1 is different radio frequency naked core sheet gauge
The drop coating technological parameter of the colourless moisture protection coating of lattice.
Table 1
Compared with the existing technology, the invention has the advantages that：
1) the characteristics of technical solution is simple, effective, and the program is according to microwave hybrid integrated circuit and radio frequency bare chip is special
Door devises a kind of packaging method, and when using this packaging method, the reliability of radio frequency bare chip can be carried preferably
It is high；
2) program is realized that encapsulation process is quick by way of drop coating on radio frequency bare chip surface, in the short time
The effective protection of RF radio frequency bare chip may be implemented, maintenanceability is good, and maintenance cost is relatively low；
3) package thickness of the present invention on microwave hybrid integrated circuit radio frequency bare chip surface is no more than 1 μm, can be effective
Ground meets the cooling requirements of radio frequency bare chip；
4) present invention can apply on the microwave hybrid integrated circuit within Ku wave bands (18GHz), encapsulate to product
Index Influence is smaller；
5) present invention stablizes in each environmental test stage index, and product index is without exception；
6) the technical solution cost is relatively low, compared to existing high-frequency circuit Parylene guard methods, convenient for further
Popularization and application.
Caused by the synthesis atmosphere in complexity and itself cavity to solve hybrid integrated multi-chip module application environment
The relatively low problem of radio frequency bare chip application reliability, while it is simple, effectively to meet operation scheme, maintenanceability is good, good heat dissipation,
Equal requirement at low cost.A kind of present invention colourless moisture protection coatings of EGC-1700, pass through high-temperature baking, plasma cleaning, guarantor
The mode for protecting the spot printing of coating realizes the encapsulation on radio frequency bare chip surface.Making it neither influences the reliability of product, while to Ku
The Index Influence of the following product of wave band is also smaller.
The colourless moisture protection coatings of EGC-1700 are Minnesota Mining and Manufacturing Company's production, are in a kind of hydrofluoroether solvent containing quality point
The fluorinated acrylic polymer of number 2%.At present in industry when microwave hybrid integrated circuit circuit radio frequency bare chip is encapsulated to micro-
Wave hydrid integrated circuit carries out Laser seal welding or parallel soldering and sealing, but product does over again and reprocesses difficulty；To in microwave hybrid integrated circuit
Portion carries out " Parylene " vacuum deposition, and complex technical process needs special equipment, cost higher；It is integrated to Microwave Hybrid
Using epoxy glue, silicon rubber, silica gel packaging, the radio-frequency performance and reliability of product can not ensure circuit radio frequency bare chip.And
The colourless moisture protections of EGC-1700 apply, and can be answered on the microwave hybrid integrated circuit within Ku wave bands (18GHz) by experiment
With technical solution is simple, effective, and good heat dissipation effect, maintenanceability is good, stablizes in each environmental test stage index, product refers to
It marks without exception.
Description of the drawings
Fig. 1 is the schematic diagram after the encapsulation of microwave hybrid integrated circuit radio frequency bare chip.
Fig. 2 is a kind of flow chart of method that realizing the encapsulation of microwave hybrid integrated circuit radio frequency bare chip.
Fig. 3 is damp heat test curve.
Specific implementation mode
In order to deepen the understanding of the present invention, the present embodiment is described in detail with reference to example.
Applicant designs and produces certain model amplifier product, and working frequency frequency is 6GHz~18GHz, and when design uses
The microwave assembly technology technology that radio frequency bare chip is shelved.It is required that product meets damp heat test GJB 150.9A-2009 and mould test
The test requirements document of GJB150.10A-2009, salt spray test GJB 150.11A-2009, while product later period maintenance is convenient, repair
It is at low cost.
Process program
1. selecting the colourless moisture protection coatings of EGC-1700 of Minnesota Mining and Manufacturing Company's production, contained in a kind of hydrofluoroether solvent
The fluorinated acrylic polymer of mass fraction 2%；
2. getting out the microwave hybrid integrated circuit containing radio frequency bare chip for needing to encapsulate in ultra-clean chamber；
3. by microwave hybrid integrated circuit be positioned in vacuum drying oven carry out high-temperature baking remove steam, baking time with it is micro-
The weight of wave hydrid integrated circuit is directly proportional；
4. using plasma cleaning equipment to the cleaning of radio frequency bare chip and surface in the microwave hybrid integrated circuit after baking
Activation, is backfilled using nitrogen, and oxidation reaction occurs for oxygen and the organic matter on RF radio frequency bare chip surface, and argon gas is to RF radio frequency
The organic matter on bare chip surface bombard while being activated to pad；
5. carrying out drop coating encapsulation to radio frequency bare chip surface using the colourless moisture protection coatings of EGC-1700, packaging time exists
It after the completion of plasma cleaning in 2 hours, is packaged using automatic dispensing machine, using personality card lancet head, package thickness does not surpass
Cross 1 μm；
6. after the solidification of radio frequency bare chip face coat, observe under an electron microscope, to the unencapsulated naked radio frequency of the frequency arrived
It is repaired on bare chip surface.
Entire solution process flow chart is as shown in Figure 2.
Test example
Microwave hybrid integrated circuit to carrying out radio frequency bare chip surface encapsulation by above-mentioned process program is tested.Microwave
The front and back electrical property canonical parameter of radio frequency bare chip encapsulation is referring to table 2 in hydrid integrated circuit.
| Test parameter | Before encapsulation | After encapsulation | Unit |
| Test frequency | Center frequency point@12GHz | Center frequency point@12GHz | GHz |
| Gain | 17 | 16.9 | dB |
| Noise coefficient | 2 | 2.05 | dB |
1. damp heat test is executed by Fig. 2,10 cycles of test period, 240 hours；
The index before and after damp heat test is compared, variation is smaller, meets product index protocol requirement.Test index such as 3 institute of table
Show.
| Test parameter | Before experiment | After experiment | Unit |
| Test frequency | Center frequency point@12GHz | Center frequency point@12GHz | GHz |
| Gain | 16.9 | 16.8 | dB |
| Noise coefficient | 2.05 | 2.1 | dB |
2. mould test experimental condition：A) test period：28d；B) experiment selects strain to be shown in Table 4；C) qualified grade：1 grade.
| Serial number | Strain name | Bacterium numbering |
| 1 | Aspergillus flavus | AS3.3950 |
| 2 | Aspergillus versicolor | AS3.3885 |
| 3 | Penicillium funiculosum | AS3.3875 |
| 4 | Chaetomium globosum | AS3.4254 |
| 5 | Aspergillus niger | AS3.3928 |
After experiment, microwave hybrid integrated circuit radio frequency bare chip surface is checked, there is less mould on radio frequency bare chip surface
It is distributed, the radio frequency bare chip face coat below mould is high-visible, meets 1 grade of requirement in GJB 150.10A-2009 standards.
3. salt spray test condition：A) temperature is 35 DEG C before chamber spraying, and the time is at least 2h；B) salting liquid：Salt is molten
The concentration of liquid should be 5%+1%, and pH value is between 6.5~7.2；C) salt fog deposition：In 80cm2Horizontal collecting region in, protect
The sedimentation rate for demonstrate,proving salting liquid is (1~3) mL/h.
It after experiment, tests to microwave hybrid integrated circuit and radio frequency bare chip, does not find that corrosion and failure, satisfaction are wanted
It asks.
It is tested and is illustrated by above three, after this process program, product meets damp heat test GJB 150.9A-
The test requirements document of 2009 and mould test GJB 150.10A-2009, salt spray test GJB 150.11A-2009.
From the point of view of said program, the colourless moisture protections of EGC-1700 apply, can be within Ku wave bands (18GHz) by experiment
Microwave hybrid integrated circuit on apply, technical solution is simple, effectively, and good heat dissipation effect, maintenanceability is good, is tried in each environment
Stage index stabilization is tested, product index is without exception.
It should be noted that above-described embodiment, encapsulation range not for the purpose of limiting the invention, in above-mentioned technical proposal
On the basis of made equivalents or replacement each fall within the range packaged by the claims in the present invention.
Claims (9)
1. a kind of method for realizing the encapsulation of microwave hybrid integrated circuit radio frequency bare chip, its step are as follows：
1) microwave hybrid integrated circuit containing radio frequency bare chip for needing to encapsulate is got out in ultra-clean chamber；
2) microwave hybrid integrated circuit is positioned in vacuum drying oven and carries out high-temperature baking removal steam；
3) use plasma cleaning equipment to the cleaning of radio frequency bare chip and surface active in the microwave hybrid integrated circuit after baking；
4) the colourless moisture protection coatings of EGC-1700 are used to carry out drop coating encapsulation to radio frequency bare chip surface；
5) it after the solidification of radio frequency bare chip face coat, observes under an electron microscope, to the naked radio frequency naked core of the unencapsulated frequency arrived
It is repaired on piece surface.
2. a kind of method for realizing the encapsulation of microwave hybrid integrated circuit radio frequency bare chip according to claim 1, feature
It is, in the step 2), before the encapsulation of radio frequency bare chip, vacuum bakeout should be carried out, remove steam, baking time and Microwave Hybrid collection
It is directly proportional at the weight of circuit.
3. a kind of method for realizing the encapsulation of microwave hybrid integrated circuit radio frequency bare chip according to claim 1, feature
It is, in the step 3), before the encapsulation of radio frequency bare chip, plasma cleaning should be carried out, wherein nitrogen is used as backfill, first uses oxygen
Plasma carries out organic matter to radio frequency bare chip surface and aoxidizes, and is secondly had to radio frequency bare chip surface using argon plasma
Machine object removes and pad activation, plasma cleaning contribute to sprawling for the colourless moisture protection coatings of EGC-1700.
4. a kind of method for realizing the encapsulation of microwave hybrid integrated circuit radio frequency bare chip according to claim 1, feature
It is, in the step 3), after the completion of radio frequency bare chip is using plasma cleaning equipment cleaning, away from the colourless moisture-proof guarantors of EGC-1700
The packaging time for protecting coating is no more than 2 hours.
5. a kind of method for realizing the encapsulation of microwave hybrid integrated circuit radio frequency bare chip according to claim 1, feature
It is, in the step 4), when the colourless moisture protection coatings of EGC-1700 that radio frequency bare chip uses encapsulate, using automatically dropping glue
Machine is operated, and selection personality card lancet head internal diameter is 0.09mm, and syringe needle outer diameter is 0.26mm.
6. a kind of method for realizing the encapsulation of microwave hybrid integrated circuit radio frequency bare chip according to claim 1, feature
It is, in the step 4), the colourless moisture protection coatings of EGC-1700 that radio frequency bare chip uses are carried out by the way of drop coating,
When drop coating, bayonet syringe needle is 1.5~2mm away from radio frequency bare chip surface distance.
7. a kind of method for realizing the encapsulation of microwave hybrid integrated circuit radio frequency bare chip according to claim 1, feature
It is, the colourless moisture protection coatings of the EGC-1700 that radio frequency bare chip uses are operated using automatic dispensing machine, according to chip
Size, be arranged outlet pressure, note drop the time, timing, quantify protective coating.Subordinate list 1 is different radio frequency bare chip specification
The drop coating technological parameter of colourless moisture protection coating.
8. a kind of method for realizing the encapsulation of microwave hybrid integrated circuit radio frequency bare chip according to claim 1, feature
It is, the colourless moisture protection coatings of the EGC-1700 that radio frequency bare chip uses in the step 4) are carried out by the way of drop coating,
Coating layer thickness is no more than 1 μm.
9. a kind of method for realizing the encapsulation of microwave hybrid integrated circuit radio frequency bare chip according to claim 1, feature
It is, the colourless moisture protection coatings of the EGC-1700 that radio frequency bare chip uses in the step 4) use 3MTMNovecTM7100DL
Diluent is wiped.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810517802.8A CN108807198B (en) | 2018-05-25 | 2018-05-25 | Method for realizing microwave hybrid integrated circuit radio frequency bare chip packaging |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810517802.8A CN108807198B (en) | 2018-05-25 | 2018-05-25 | Method for realizing microwave hybrid integrated circuit radio frequency bare chip packaging |
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| CN108807198B CN108807198B (en) | 2020-07-07 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110610850A (en) * | 2019-09-16 | 2019-12-24 | 西安空间无线电技术研究所 | Cleaning method for glass substrate after laser hole making |
| CN111952152A (en) * | 2020-08-04 | 2020-11-17 | 安徽华东光电技术研究所有限公司 | Bare chip packaging method |
| CN113109610A (en) * | 2021-04-06 | 2021-07-13 | 北京中微普业科技有限公司 | RF bare chip flat probe test tool |
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| US20100102436A1 (en) * | 2008-10-20 | 2010-04-29 | United Test And Assembly Center Ltd. | Shrink package on board |
| CN104124216A (en) * | 2014-07-03 | 2014-10-29 | 天水华天科技股份有限公司 | Substrate chip carrier CSP package and production method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110610850A (en) * | 2019-09-16 | 2019-12-24 | 西安空间无线电技术研究所 | Cleaning method for glass substrate after laser hole making |
| CN110610850B (en) * | 2019-09-16 | 2022-01-04 | 西安空间无线电技术研究所 | Cleaning method for glass substrate after laser hole making |
| CN111952152A (en) * | 2020-08-04 | 2020-11-17 | 安徽华东光电技术研究所有限公司 | Bare chip packaging method |
| CN111952152B (en) * | 2020-08-04 | 2023-06-06 | 安徽华东光电技术研究所有限公司 | Bare chip packaging method |
| CN113109610A (en) * | 2021-04-06 | 2021-07-13 | 北京中微普业科技有限公司 | RF bare chip flat probe test tool |
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|---|---|
| CN108807198B (en) | 2020-07-07 |
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