CN108774066A - High heat conduction nitrogenizes the manufacturing method of silicon chip - Google Patents

High heat conduction nitrogenizes the manufacturing method of silicon chip Download PDF

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CN108774066A
CN108774066A CN201810630735.0A CN201810630735A CN108774066A CN 108774066 A CN108774066 A CN 108774066A CN 201810630735 A CN201810630735 A CN 201810630735A CN 108774066 A CN108774066 A CN 108774066A
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silicon nitride
heat conduction
powder
high heat
manufacturing
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孟丽丽
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Weihai Qi Da Special Ceramics Technology Co Ltd
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Weihai Qi Da Special Ceramics Technology Co Ltd
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Abstract

The present invention relates to ceramic heat-dissipating substrate manufacturing technology fields, specifically a kind of bending strength is high, thermal conductivity is high, the manufacturing method of silicon chip is nitrogenized especially suitable for the high heat conduction of the following power Electric drive module, it is characterised in that by the magnesium nitrate Mg (NO of the silicon nitride ceramics powder of 92.5%-97.5% and 2.5%-7.5%3)2It is sufficiently mixed in industrial alcohol, the mixture of acquisition is in N2Cofiring is carried out under air pressure, 800 DEG C of maximum temperature, the agitated mill 24-48H of resulting material is finely ground at mixed powder, mixed powder is taken to be sufficiently mixed with magnesia, yttria, the material stirring of acquisition simultaneously grinds 24H, it is finely ground at high heat conduction silicon nitride board material, pressurized high-temperature degumming process is carried out after injection moulding, through N21200 DEG C of atmospheric pressure 2-4MPa, maximum temperature -1400 DEG C of degummings, under 6-7MPa nitrogen pressures, 1850 DEG C -1890 DEG C are sintered 2-4 hours semi-finished product；The notable advantages such as then under 5 MPa nitrogen pressures, annealing obtains finished product, compared with prior art, the present invention with easy to operate, production efficiency is high, and properties of product are stablized.

Description

High heat conduction nitrogenizes the manufacturing method of silicon chip
Technical field
The present invention relates to ceramic heat-dissipating substrate manufacturing technology field, specifically a kind of bending strength is high, thermal conductivity is high, The manufacturing method of silicon chip is nitrogenized especially suitable for the high heat conduction of the following power Electric drive module.
Background technology
It is well known that problem of environmental pollution is increasingly severe, global more than 100 a countries and regions respond the United Nations thus Call, make the motor vehicle for stopping production and sales burn fossil matter oil plant before and after 2025, and put into strong grind Hair, the motor vehicle of the various electric drive of production and sales reduce exhaust emission.Include mainly：EV（electric vehicle）Electricity Electrical automobile, BEV（battery electric vehicle）Cell-powered vehicle, HEV（hybrid electric vehicle）Hybrid vehicle, PHEV（Plug-in hybrid electric vehicle）Plug-in hybrid electric vehicle, EREV（ extended-range electric vehicle）Stroke-increasing electric automobile, FCV（fuel cell vehicle）Combustion Expect battery car.
High ferro, aircraft, steamer also develop to electric drive at present.Electric drive is exactly to control motor rotation.And it controls and drives Dynamic motor is exactly to use IGBT（Insulated Gate Bipolar Transistor）Insulated gate bipolar transistor is compound Full-control type voltage driven type power semiconductor.Motor is driven using Digital Signals IGBT module, drives work( Rate is small, and saturation pressure reduces, and switching speed is fast.Be electrical equipment it is preferred.
But when the increase of IGBT module electrode current, producible nominal loss also becomes larger.Switching loss increases, device hair Heat aggravation, it is necessary to which the heat of generation is exported as early as possible.It can be very good to solve heat dissipation problem using ceramic heat-dissipating substrate.Ceramic base Plate keeps good insulation feature at high temperature, but intensity is not high.Currently used ceramic substrate is AL2O3（Aluminium oxide）And ALN （Aluminium nitride）, AL2O3Substrate price is low, thermal conductivity is in 20W/mk or so, bending strength<500MPa, fracture toughness<6.5MPa/ m1/2；ALN substrates thermal conductivity is in 120W/mk or so, bending strength<300MPa, fracture toughness<7MPa/m1/2, due to both The intensity of ceramic substrate is not high, therefore is restrict the reliability of IGBT power module always, therefore AL2O3It is not with ALN substrates Optimal selection.
Invention content
The present invention is directed to shortcoming and defect existing in the prior art, it is proposed that a kind of bending strength is high, thermal conductivity is high, special Not Shi Yongyu the following power Electric drive module high heat conduction nitridation silicon chip manufacturing method.
The present invention can be achieved by the following measures：
A kind of manufacturing method of high heat conduction nitridation silicon chip, it is characterised in that include the following steps：
Step 1：Dispensing, by the magnesium nitrate Mg (NO of the silicon nitride ceramics powder of 92.5%-97.5% and 2.5%-7.5%3)2In industry It is sufficiently mixed in alcohol, the α phase silicon nitride contents of beta-silicon nitride powder wherein in silicon nitride ceramics powder>94%；
Step 2：By the mixture obtained in step 1 in N2Cofiring, 800 DEG C of maximum temperature are carried out under air pressure；
Step 3：The agitated mill 24-48H of step 2 resulting material is finely ground at mixed powder；
Step 4：The mixed powder in step 3 is taken to be sufficiently mixed with magnesia, yttria, wherein mixed powder 90-96%, Magnesia（MgO）2-8%, yttria（Y2O3）1-3%；
Step 5：By material stirring that step 4 obtains and 24H is ground, it is finely ground at high heat conduction silicon nitride board material；
Step 6：The material obtained in step 5 is injection moulded according to product requirement, then carries out pressurized high-temperature degumming process, warp N21200 DEG C of atmospheric pressure 2-4MPa, maximum temperature -1400 DEG C of degummings；
Step 7：By the semi-finished product obtained in step 6 under 6-7MPa nitrogen pressures, 1850 DEG C-1890 DEG C are sintered 2-4 hours； Then under 5 MPa nitrogen pressures, 1810 DEG C -1850 DEG C are annealed 3-4 hours, and finished product is obtained.
Silicon nitride ceramics powder and magnesium nitrate Mg (NO in step 1 of the present invention3)2Proportioning preferably 95% silicon nitride ceramics Powder and 5% magnesium nitrate Mg (NO3)2。
Ranging from 0.5-0.7 μm of material fineness of grind in step 3 of the present invention.
Each group distribution ratio is preferably mixed powder 93%, magnesia in step 4 of the present invention（MgO）5%, yttria （Y2O3）2%.
Ranging from 0.3-0.5 μm of material fineness of grind in step 5 of the present invention.
The α phase silicon nitride contents of beta-silicon nitride powder are preferably 96.5%, β phases in silicon nitride ceramics powder in step 1 of the present invention Beta-silicon nitride powder 3.5%.
The high heat conduction silicon nitride board bending strength that the present invention obtains>800 MPa, thermal conductivity>110W/mk, fracture toughness 7.78MPa/m1/2, it is the electrically driven (operated) first choice of power, compared with prior art, the present invention with easy to operate, production efficiency is high, The notable advantages such as properties of product stabilization.
Specific implementation mode：
With reference to embodiment, the present invention is further illustrated.
Embodiment 1：
A kind of manufacturing method of high heat conduction nitridation silicon chip, including following steps：
Step 1：Dispensing, by 94% silicon nitride ceramics powder and 6% magnesium nitrate Mg (NO3)2It is sufficiently mixed in industrial alcohol, The α phase silicon nitride contents of beta-silicon nitride powder wherein in silicon nitride ceramics powder>94%；
Step 2：By the mixture obtained in step 1 in N2Cofiring, 800 DEG C of maximum temperature are carried out under air pressure；
Step 3：The agitated mill 24-48H of step 2 resulting material is finely ground at mixed powder；
Step 4：The mixed powder in step 3 is taken to be sufficiently mixed with magnesia, yttria, wherein mixed powder 94%, oxidation Magnesium（MgO）5%, yttria（Y2O3）1%；
Step 5：By material stirring that step 4 obtains and 24H is ground, it is finely ground at high heat conduction silicon nitride board material；
Step 6：The material obtained in step 5 is injection moulded according to product requirement, then carries out pressurized high-temperature degumming process, warp N21200 DEG C of atmospheric pressure 2-4MPa, maximum temperature -1400 DEG C of degummings；
Step 7：By the semi-finished product obtained in step 6 under 6-7MPa nitrogen pressures, 1850 DEG C-1890 DEG C are sintered 2-4 hours； Then under 5 MPa nitrogen pressures, 1810 DEG C -1850 DEG C are annealed 3-4 hours, and finished product is obtained.
Embodiment 2：
A kind of manufacturing method of high heat conduction nitridation silicon chip, including following steps：
Step 1：Dispensing, by 95% silicon nitride ceramics powder and 5% magnesium nitrate Mg (NO3)2It is sufficiently mixed in industrial alcohol, The α phase silicon nitride contents of beta-silicon nitride powder wherein in silicon nitride ceramics powder>94%；
Step 2：By the mixture obtained in step 1 in N2Cofiring, 800 DEG C of maximum temperature are carried out under air pressure；
Step 3：The agitated mill 24-48H of step 2 resulting material is finely ground at mixed powder；
Step 4：The mixed powder in step 3 is taken to be sufficiently mixed with magnesia, yttria, wherein mixed powder 93%, oxidation Magnesium（MgO）5%, yttria（Y2O3）2%；
Step 5：By material stirring that step 4 obtains and 24H is ground, it is finely ground at high heat conduction silicon nitride board material；
Step 6：The material obtained in step 5 is injection moulded according to product requirement, then carries out pressurized high-temperature degumming process, warp N21200 DEG C of atmospheric pressure 2-4MPa, maximum temperature -1400 DEG C of degummings；
Step 7：By the semi-finished product obtained in step 6 under 6-7MPa nitrogen pressures, 1850 DEG C-1890 DEG C are sintered 2-4 hours； Then under 5 MPa nitrogen pressures, 1810 DEG C -1850 DEG C are annealed 3-4 hours, and finished product is obtained.
The high heat conduction silicon nitride board bending strength that the present invention obtains>800 MPa, thermal conductivity>110W/mk, fracture toughness 7.78MPa/m1/2, it is the electrically driven (operated) first choice of power, compared with prior art, the present invention with easy to operate, production efficiency is high, The notable advantages such as properties of product stabilization.

Claims (6)

1. a kind of manufacturing method of high heat conduction nitridation silicon chip, it is characterised in that include the following steps：
Step 1：Dispensing, by the magnesium nitrate Mg (NO of the silicon nitride ceramics powder of 92.5%-97.5% and 2.5%-7.5%3)2? It is sufficiently mixed in industrial alcohol, the α phase silicon nitride contents of beta-silicon nitride powder wherein in silicon nitride ceramics powder>94%；
Step 2：By the mixture obtained in step 1 in N2Cofiring, 800 DEG C of maximum temperature are carried out under air pressure；
Step 3：The agitated mill 24-48H of step 2 resulting material is finely ground at mixed powder；
Step 4：The mixed powder in step 3 is taken to be sufficiently mixed with magnesia, yttria, wherein mixed powder 90-96%, Magnesia (MgO) 2-8%, yttria (Y2O3) 1-3%；
Step 5：By material stirring that step 4 obtains and 24H is ground, it is finely ground at high heat conduction silicon nitride board material；
Step 6：The material obtained in step 5 is injection moulded according to product requirement, then carries out pressurized high-temperature degumming process, warp N21200 DEG C of atmospheric pressure 2-4MPa, maximum temperature -1400 DEG C of degummings；
Step 7：By the semi-finished product obtained in step 6 under 6-7MPa nitrogen pressures, 1850 DEG C -1890 DEG C are sintered 2-4 hours；So Afterwards under 5MPa nitrogen pressures, 1810 DEG C -1850 DEG C are annealed 3-4 hours, and finished product is obtained.
2. a kind of manufacturing method of high heat conduction nitridation silicon chip according to claim 1, it is characterised in that nitrogenized in step 1 Silicon ceramic powder and magnesium nitrate Mg (NO3)2Proportioning be 95% silicon nitride ceramics powder and 5% magnesium nitrate Mg (NO3)2。
3. a kind of manufacturing method of high heat conduction nitridation silicon chip according to claim 1, it is characterised in that in the step 3 Ranging from 0.5-0.7 μm of material fineness of grind.
4. a kind of manufacturing method of high heat conduction nitridation silicon chip according to claim 1, it is characterised in that in the step 4 Each group distribution ratio is mixed powder 93%, magnesia MgO 5%, yttria 2%.
5. a kind of manufacturing method of high heat conduction nitridation silicon chip according to claim 1, it is characterised in that in the step 5 Ranging from 0.3-0.5 μm of material fineness of grind.
6. a kind of manufacturing method of high heat conduction nitridation silicon chip according to claim 1, it is characterised in that nitrogenized in step 1 The α phase silicon nitride contents of beta-silicon nitride powder are 96.5% in silicon ceramic powder, beta phase silicon nitride powder 3.5%.
CN201810630735.0A 2018-06-19 2018-06-19 High heat conduction nitrogenizes the manufacturing method of silicon chip Pending CN108774066A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3951857A4 (en) * 2019-03-29 2022-05-18 Denka Company Limited Silicon nitride sintered body, method for producing same, multilayer body and power module

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US4073845A (en) * 1976-01-29 1978-02-14 Gte Sylvania Incorporated High density high strength S13 N4 ceramics prepared by pressureless sintering of partly crystalline, partly amorphous S13 N4 powder
JPS57209887A (en) * 1981-06-17 1982-12-23 Kobe Steel Ltd Method of sintering silicon nitride
US4406668A (en) * 1982-05-20 1983-09-27 Gte Laboratories Incorporated Nitride coated silicon nitride cutting tools
CN1654427A (en) * 2005-01-14 2005-08-17 中国科学院上海硅酸盐研究所 Method for preparing high thermal conduction silicon nitride ceramic with magnesium silicon nitride as sintering aid
CN101215174A (en) * 2008-01-09 2008-07-09 广西师范大学 Transparent beta-silicon nitride ceramics and preparation method thereof
CN102584247A (en) * 2012-03-13 2012-07-18 威海兴泰金属制造有限公司 Complex-phase silicon nitride ceramic and manufacture method thereof
CN102757236A (en) * 2012-06-28 2012-10-31 航天材料及工艺研究所 Wrapping method of ceramic powder
CN105347791A (en) * 2015-11-30 2016-02-24 东莞信柏结构陶瓷有限公司 Zirconia ceramic artwork preparation method based on gel casting technology

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4073845A (en) * 1976-01-29 1978-02-14 Gte Sylvania Incorporated High density high strength S13 N4 ceramics prepared by pressureless sintering of partly crystalline, partly amorphous S13 N4 powder
JPS57209887A (en) * 1981-06-17 1982-12-23 Kobe Steel Ltd Method of sintering silicon nitride
US4406668A (en) * 1982-05-20 1983-09-27 Gte Laboratories Incorporated Nitride coated silicon nitride cutting tools
CN1654427A (en) * 2005-01-14 2005-08-17 中国科学院上海硅酸盐研究所 Method for preparing high thermal conduction silicon nitride ceramic with magnesium silicon nitride as sintering aid
CN101215174A (en) * 2008-01-09 2008-07-09 广西师范大学 Transparent beta-silicon nitride ceramics and preparation method thereof
CN102584247A (en) * 2012-03-13 2012-07-18 威海兴泰金属制造有限公司 Complex-phase silicon nitride ceramic and manufacture method thereof
CN102757236A (en) * 2012-06-28 2012-10-31 航天材料及工艺研究所 Wrapping method of ceramic powder
CN105347791A (en) * 2015-11-30 2016-02-24 东莞信柏结构陶瓷有限公司 Zirconia ceramic artwork preparation method based on gel casting technology

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3951857A4 (en) * 2019-03-29 2022-05-18 Denka Company Limited Silicon nitride sintered body, method for producing same, multilayer body and power module

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Application publication date: 20181109