CN108767119B - Organic-inorganic hybrid photovoltaic cell and preparation method thereof - Google Patents

Organic-inorganic hybrid photovoltaic cell and preparation method thereof Download PDF

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CN108767119B
CN108767119B CN201810653928.8A CN201810653928A CN108767119B CN 108767119 B CN108767119 B CN 108767119B CN 201810653928 A CN201810653928 A CN 201810653928A CN 108767119 B CN108767119 B CN 108767119B
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张军
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Jiangsu Qike Energy Technology Co.,Ltd.
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Abstract

The invention relates to an organic-inorganic hybrid photovoltaic cell and a preparation method thereof, wherein in the preparation process of the organic-inorganic hybrid photovoltaic cell, a phosphorus-doped polycrystalline silicon layer is firstly formed on the upper surface of an N-type polycrystalline silicon wafer, so that the doping concentration of the phosphorus-doped polycrystalline silicon layer is smaller than that of the N-type polycrystalline silicon wafer, an inorganic insulating thin layer is deposited on the surface of the phosphorus-doped polycrystalline silicon layer, and then a PEDOT (polymer doped silicon sulfide) layer is formed.

Description

Organic-inorganic hybrid photovoltaic cell and preparation method thereof
Technical Field
The invention relates to the technical field of photovoltaic cells, in particular to an organic-inorganic hybrid photovoltaic cell and a preparation method thereof.
Background
In the conventional organic-inorganic hybrid solar cell, a silicon nanowire array is generally prepared on the upper surface of an N-type polycrystalline silicon wafer, the N-type polycrystalline silicon wafer is methylated, a P3HT solution or a Spiro-OMeTAD solution is spin-coated on the front surface of the N-type polycrystalline silicon wafer, and a P3HT layer or a Spiro-OMeTAD layer is formed by annealing, a PEDOT PSS solution is spin-coated on the surface of the P3HT layer or the Spiro-OMeTAD layer, and annealing is performed to form a PEDOT PSS layer, a front-side gate electrode is prepared on the front surface of the N-type polycrystalline silicon wafer, and a back electrode is prepared on the back surface thereof, the conventional organic-inorganic hybrid solar cell has low photoelectric conversion efficiency, and since organic material layers such as a P3HT layer, a Spiro-OMeTAD layer, and a PEDOT PSS layer are formed on the silicon nanowire array, when the area of the N-type polycrystalline silicon wafer is increased, resulting in deterioration of the film formation quality of the organic material layer, and further, in reduction of the photoelectric conversion efficiency of the organic-inorganic hybrid solar cell.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides an organic-inorganic hybrid photovoltaic cell and a preparation method thereof.
In order to achieve the purpose, the invention provides a preparation method of an organic-inorganic hybrid photovoltaic cell, which comprises the following steps:
1) providing an N-type polycrystalline silicon wafer, and performing texturing treatment on the N-type polycrystalline silicon wafer to form a texturing surface layer on the upper surface of the N-type polycrystalline silicon wafer;
2) depositing a phosphorus-doped amorphous silicon layer on the upper surface of the N-type polycrystalline silicon wafer, and then converting the phosphorus-doped amorphous silicon layer into a phosphorus-doped polycrystalline silicon layer through heat treatment, wherein the doping concentration of the phosphorus-doped polycrystalline silicon layer is less than that of the N-type polycrystalline silicon wafer;
3) depositing an inorganic insulating thin layer on the surface of the phosphorus-doped polycrystalline silicon layer, wherein the thickness of the inorganic insulating thin layer is 1-2 nanometers;
4) spin-coating Cu on the upper surface of the N-type polycrystalline silicon wafer obtained in the step 39S5PSS solution of the first PEDOT of the nanoparticles, wherein Cu in the PSS solution of the first PEDOT is9S5The concentration of the nanocrystalline is 0.05-0.1mg/ml, the rotation speed of spin coating is 5500-;
5) spin-coating Cu-containing on the upper surface of the N-type polycrystalline silicon wafer obtained in the step 49S5A second PEDOT PSS solution of nanoparticles, wherein Cu in the second PEDOT PSS solution9S5The concentration of the nanocrystalline is 0.15-0.25mg/ml, the rotation speed of spin coating is 4000-;
6) spin-coating Cu-containing on the upper surface of the N-type polycrystalline silicon wafer obtained in the step 59S5PSS solution of third PEDOT of the nano-particles, wherein Cu in the PSS solution of the third PEDOT is9S5The concentration of the nanocrystalline is 0.3-0.5mg/ml, the rotation speed of spin coating is 3500 and 4500 revolutions per minute, and then third annealing treatment is carried out to form a third PEDOT (Poly ethylene glycol ether ketone) PSS layer;
7) sequentially spin-coating a polyvinyl alcohol solution and a polyethyleneimine solution on the back surface of the N-type polycrystalline silicon wafer, wherein the concentration of polyvinyl alcohol in the polyvinyl alcohol solution is 0.5-1mg/ml, the concentration of polyethyleneimine in the polyethyleneimine solution is 0.5-1mg/ml, the spin-coating speed is 4000-4500 rpm, and then performing fourth annealing treatment to form a polyvinyl alcohol/polyethyleneimine composite layer;
8) preparing a front silver gate electrode on the upper surface of the N-type polycrystalline silicon wafer obtained in the step 7;
9) and (4) preparing a back aluminum electrode on the lower surface of the N-type polycrystalline silicon wafer obtained in the step (8).
Preferably, in the step (2), the doping concentration of the N-type polysilicon is 1015 cm-3-1017 cm-3The doping concentration of the N-type polycrystalline silicon wafer is 1016 cm-3-1018 cm-3。
Preferably, the inorganic insulating thin layer is one of zirconia, silica and alumina.
Preferably, in the step (4), the temperature of the first annealing treatment is 120-130 ℃, the annealing time of the first annealing treatment is 15-25 minutes, and the thickness of the first PEDOT/PSS layer is 5-15 nm.
Preferably, in the step (5), the temperature of the second annealing treatment is 110-120 ℃, the annealing time of the second annealing treatment is 10-20 minutes, and the thickness of the second PEDOT/PSS layer is 20-30 nanometers.
Preferably, in the step (6), the temperature of the third annealing treatment is 115-135 ℃, the annealing time of the third annealing treatment is 20-30 minutes, and the thickness of the third PEDOT/PSS layer is 25-35 nm.
Preferably, in the step (7), the temperature of the fourth annealing treatment is 100-105 ℃, the annealing time of the fourth annealing treatment is 10-20 minutes, and the thickness of the polyvinyl alcohol/polyethyleneimine composite layer is 1-2 nanometers.
Preferably, in the step (8), the front-side silver gate electrode is formed by thermally evaporating metal silver, and the thickness of the front-side silver gate electrode is 160-280 nm; in the step (9), the back aluminum electrode is formed by thermally evaporating metal aluminum, and the thickness of the back aluminum electrode is 300-400 nm.
The invention also provides an organic-inorganic hybrid photovoltaic cell prepared by the method.
Compared with the prior art, the invention has the following advantages:
in the preparation process of the organic-inorganic hybrid photovoltaic cell, firstly, a phosphorus-doped polycrystalline silicon layer is formed on the upper surface of the N-type polycrystalline silicon wafer, so that the doping concentration of the phosphorus-doped polycrystalline silicon layer is smaller than that of the N-type polycrystalline silicon wafer, an inorganic insulating thin layer is deposited on the surface of the phosphorus-doped polycrystalline silicon layer, and then a PEDOT (Poly ethylene styrene) PSS layer is formed.
In the preparation process of the PEDOT PSS layer, the first, second and third PEDOT PSS layers are arranged, and the three PEDOT PSS layers are arranged and contain different amounts of Cu9S5PSS layer conductivity is gradually increased, hole transmission efficiency is effectively improved, filling factors and short-circuit current of the novel heterojunction photovoltaic cell are further improved, meanwhile, a polyvinyl alcohol/polyethyleneimine composite layer is formed on the back of the N-type polycrystalline silicon wafer, contact performance of a back aluminum electrode and the N-type polycrystalline silicon wafer is improved while the N-type polycrystalline silicon wafer is effectively passivated, electron transmission efficiency is further improved, and efficiency of the corresponding organic-inorganic hybrid photovoltaic cell is further improved.
Drawings
Fig. 1 is a schematic structural view of an organic-inorganic hybrid photovoltaic cell of the present invention.
Detailed Description
The invention provides a preparation method of an organic-inorganic hybrid photovoltaic cell, which comprises the following steps:
1) providing an N-type polycrystalline silicon wafer, and performing texturing treatment on the N-type polycrystalline silicon wafer to form a texturing surface layer on the upper surface of the N-type polycrystalline silicon wafer;
2) depositing a phosphorus-doped amorphous silicon layer on the upper surface of the N-type polycrystalline silicon wafer, and then converting the phosphorus-doped amorphous silicon layer into a phosphorus-doped polycrystalline silicon layer through heat treatment, wherein the doping concentration of the phosphorus-doped polycrystalline silicon layer is less than that of the N-type polycrystalline silicon wafer, specifically, the heat treatment temperature is 600-800 ℃, the heat treatment time is 20-40 minutes, and the thickness of the phosphorus-doped polycrystalline silicon layer is 20-30 nanometers;
3) depositing an inorganic insulating thin layer on the surface of the phosphorus-doped polycrystalline silicon layer, wherein the thickness of the inorganic insulating thin layer is 1-2 nanometers;
4) spin-coating Cu on the upper surface of the N-type polycrystalline silicon wafer obtained in the step 39S5PSS solution of the first PEDOT of the nanoparticles, wherein Cu in the PSS solution of the first PEDOT is9S5The concentration of the nanocrystalline is 0.05-0.1mg/ml, the rotation speed of spin coating is 5500-;
5) spin-coating Cu-containing on the upper surface of the N-type polycrystalline silicon wafer obtained in the step 49S5A second PEDOT PSS solution of nanoparticles, wherein Cu in the second PEDOT PSS solution9S5The concentration of the nanocrystalline is 0.15-0.25mg/ml, the rotation speed of spin coating is 4000-;
6) spin-coating Cu-containing on the upper surface of the N-type polycrystalline silicon wafer obtained in the step 59S5PSS solution of third PEDOT of the nano-particles, wherein Cu in the PSS solution of the third PEDOT is9S5The concentration of the nanocrystalline is 0.3-0.5mg/ml, the rotation speed of spin coating is 3500 and 4500 revolutions per minute, and then third annealing treatment is carried out to form a third PEDOT (Poly ethylene glycol ether ketone) PSS layer;
7) sequentially spin-coating a polyvinyl alcohol solution and a polyethyleneimine solution on the back surface of the N-type polycrystalline silicon wafer, wherein the concentration of polyvinyl alcohol in the polyvinyl alcohol solution is 0.5-1mg/ml, the concentration of polyethyleneimine in the polyethyleneimine solution is 0.5-1mg/ml, the spin-coating speed is 4000-4500 rpm, and then performing fourth annealing treatment to form a polyvinyl alcohol/polyethyleneimine composite layer;
8) preparing a front silver gate electrode on the upper surface of the N-type polycrystalline silicon wafer obtained in the step 7;
9) and (4) preparing a back aluminum electrode on the lower surface of the N-type polycrystalline silicon wafer obtained in the step (8).
Wherein, in the step (2), the doping concentration of the N-type polysilicon is 1015 cm-3-1017 cm-3The doping concentration of the N-type polycrystalline silicon wafer is 1016 cm-3-1018 cm-3. The inorganic insulating thin layer is one of zirconia, silica and alumina. In the step (4), the temperature of the first annealing treatment is 120-130 ℃, the annealing time of the first annealing treatment is 15-25 minutes, and the thickness of the first PEDOT/PSS layer is 5-15 nanometers. In the step (5), the temperature of the second annealing treatment is 110-120 ℃, the annealing time of the second annealing treatment is 10-20 minutes, and the thickness of the second PEDOT/PSS layer is 20-30 nanometers.
In the step (6), the temperature of the third annealing treatment is 115-135 ℃, the annealing time of the third annealing treatment is 20-30 minutes, and the thickness of the third PEDOT/PSS layer is 25-35 nm. In the step (7), the temperature of the fourth annealing treatment is 100-105 ℃, the annealing time of the fourth annealing treatment is 10-20 minutes, and the thickness of the polyvinyl alcohol/polyethyleneimine composite layer is 1-2 nanometers. In the step (8), forming the front-side silver gate electrode by thermally evaporating metal silver, wherein the thickness of the front-side silver gate electrode is 160-280 nanometers; in the step (9), the back aluminum electrode is formed by thermally evaporating metal aluminum, and the thickness of the back silver electrode is 300-400 nm.
As shown in fig. 1, the solar cell prepared by the method of the present invention comprises, from bottom to top, a back aluminum electrode 1, a polyvinyl alcohol/polyethyleneimine composite layer 2, an N-type polycrystalline silicon wafer 3, a phosphorus-doped polycrystalline silicon layer 4, an inorganic insulating thin layer 5, a first PEDOT: PSS layer 6, a second PEDOT: PSS layer 7, a third PEDOT: PSS layer 8, and a front silver gate electrode 9.
Example 1:
a preparation method of an organic-inorganic hybrid photovoltaic cell comprises the following steps:
1) providing an N-type polycrystalline silicon wafer, and performing texturing treatment on the N-type polycrystalline silicon wafer to form a texturing surface layer on the upper surface of the N-type polycrystalline silicon wafer;
2) depositing a phosphorus-doped amorphous silicon layer on the upper surface of the N-type polycrystalline silicon wafer, and then converting the phosphorus-doped amorphous silicon layer into a phosphorus-doped polycrystalline silicon layer through heat treatment, wherein the doping concentration of the phosphorus-doped polycrystalline silicon layer is less than that of the N-type polycrystalline silicon wafer, specifically, the heat treatment temperature is 750 ℃, the heat treatment time is 35 minutes, and the thickness of the phosphorus-doped polycrystalline silicon layer is 25 nanometers;
3) depositing an inorganic insulating thin layer on the surface of the phosphorus-doped polycrystalline silicon layer, wherein the thickness of the inorganic insulating thin layer is 1.5 nanometers;
4) spin-coating Cu on the upper surface of the N-type polycrystalline silicon wafer obtained in the step 39S5PSS solution of the first PEDOT of the nanoparticles, wherein Cu in the PSS solution of the first PEDOT is9S5The concentration of the nanocrystalline is 0.08mg/ml, the rotation speed of spin coating is 6000 rpm, and then first annealing treatment is carried out to form a first PEDOT (PSS) layer;
5) spin-coating Cu-containing on the upper surface of the N-type polycrystalline silicon wafer obtained in the step 49S5A second PEDOT PSS solution of nanoparticles, wherein Cu in the second PEDOT PSS solution9S5The concentration of the nanocrystalline is 0.2mg/ml, the rotation speed of spin coating is 4500 rpm, and then second annealing treatment is carried out to form a second PEDOT, namely a PSS layer;
6) spin-coating Cu-containing on the upper surface of the N-type polycrystalline silicon wafer obtained in the step 59S5PSS solution of third PEDOT of the nano-particles, wherein Cu in the PSS solution of the third PEDOT is9S5The concentration of the nanocrystalline is 0.4mg/ml, the rotation speed of spin coating is 4000 revolutions per minute, and then third annealing treatment is carried out to form a third PEDOT (PSS) layer;
7) sequentially spin-coating a polyvinyl alcohol solution and a polyethyleneimine solution on the back surface of the N-type polycrystalline silicon wafer, wherein the concentration of polyvinyl alcohol in the polyvinyl alcohol solution is 0.7mg/ml, the concentration of polyethyleneimine in the polyethyleneimine solution is 0.8mg/ml, the spin-coating speed is 4200 r/min, and then performing fourth annealing treatment to form a polyvinyl alcohol/polyethyleneimine composite layer;
8) preparing a front silver gate electrode on the upper surface of the N-type polycrystalline silicon wafer obtained in the step 7;
9) and (4) preparing a back aluminum electrode on the lower surface of the N-type polycrystalline silicon wafer obtained in the step (8).
Wherein, in the step (2), the doping concentration of the N-type polysilicon is 1016 cm-3The doping concentration of the N-type polycrystalline silicon wafer is 1017 cm-3. The inorganic insulating thin layer is zirconium oxide. In the step (4), the temperature of the first annealing treatment is 125 ℃, the annealing time of the first annealing treatment is 20 minutes, and the thickness of the first PEDOT/PSS layer is 10 nanometers. In the step (5), the temperature of the second annealing treatment is 115 ℃, the annealing time of the second annealing treatment is 15 minutes, and the thickness of the second PEDOT/PSS layer is 25 nanometers. In the step (6), the temperature of the third annealing treatment is 120 ℃, the annealing time of the third annealing treatment is 25 minutes, and the thickness of the third PEDOT/PSS layer is 30 nanometers. In the step (7), the temperature of the fourth annealing treatment is 105 ℃, the annealing time of the fourth annealing treatment is 15 minutes, and the thickness of the polyvinyl alcohol/polyethyleneimine composite layer is 1.8 nanometers. In the step (8), the front-side silver gate electrode is formed by thermally evaporating metallic silver, and the thickness of the front-side silver gate electrode is 200 nm; in the step (9), the back aluminum electrode is formed by thermally evaporating metal aluminum, and the thickness of the back silver electrode is 350 nm.
The photoelectric conversion efficiency of the organic-inorganic hybrid photovoltaic cell prepared by the method is 16.7%.
Example 2
A preparation method of an organic-inorganic hybrid photovoltaic cell comprises the following steps:
1) providing an N-type polycrystalline silicon wafer, and performing texturing treatment on the N-type polycrystalline silicon wafer to form a texturing surface layer on the upper surface of the N-type polycrystalline silicon wafer;
2) depositing a phosphorus-doped amorphous silicon layer on the upper surface of the N-type polycrystalline silicon wafer, and then converting the phosphorus-doped amorphous silicon layer into a phosphorus-doped polycrystalline silicon layer through heat treatment, wherein the doping concentration of the phosphorus-doped polycrystalline silicon layer is less than that of the N-type polycrystalline silicon wafer, specifically, the heat treatment temperature is 650 ℃, the heat treatment time is 40 minutes, and the thickness of the phosphorus-doped polycrystalline silicon layer is 28 nanometers;
3) depositing an inorganic insulating thin layer on the surface of the phosphorus-doped polycrystalline silicon layer, wherein the thickness of the inorganic insulating thin layer is 1 nanometer;
4) spin-coating Cu on the upper surface of the N-type polycrystalline silicon wafer obtained in the step 39S5PSS solution of the first PEDOT of the nanoparticles, wherein Cu in the PSS solution of the first PEDOT is9S5The concentration of the nanocrystalline is 0.06mg/ml, the rotation speed of spin coating is 6200 r/min, and then first annealing treatment is carried out to form a first PEDOT (PSS) layer;
5) spin-coating Cu-containing on the upper surface of the N-type polycrystalline silicon wafer obtained in the step 49S5A second PEDOT PSS solution of nanoparticles, wherein Cu in the second PEDOT PSS solution9S5The concentration of the nanocrystalline is 0.18mg/ml, the rotation speed of spin coating is 4800 r/min, and then second annealing treatment is carried out to form a second PEDOT (Poly ethylene glycol ether ketone) PSS layer;
6) spin-coating Cu-containing on the upper surface of the N-type polycrystalline silicon wafer obtained in the step 59S5PSS solution of third PEDOT of the nano-particles, wherein Cu in the PSS solution of the third PEDOT is9S5The concentration of the nanocrystalline is 0.45mg/ml, the rotation speed of spin coating is 4200 r/min, and then third annealing treatment is carried out to form a third PEDOT, namely a PSS layer;
7) sequentially spin-coating a polyvinyl alcohol solution and a polyethyleneimine solution on the back surface of the N-type polycrystalline silicon wafer, wherein the concentration of polyvinyl alcohol in the polyvinyl alcohol solution is 0.6mg/ml, the concentration of polyethyleneimine in the polyethyleneimine solution is 0.6mg/ml, the spin-coating speed is 4500 revolutions per minute, and then performing fourth annealing treatment to form a polyvinyl alcohol/polyethyleneimine composite layer;
8) preparing a front silver gate electrode on the upper surface of the N-type polycrystalline silicon wafer obtained in the step 7;
9) and (4) preparing a back aluminum electrode on the lower surface of the N-type polycrystalline silicon wafer obtained in the step (8).
Wherein, in the step (2), the doping concentration of the N-type polysilicon is 5 x 1016 cm-3The doping concentration of the N-type polycrystalline silicon wafer is 3 multiplied by 1017 cm-3. The inorganic insulating thin layer is silicon oxide. In the step (4), the temperature of the first annealing treatment is 128 ℃, the annealing time of the first annealing treatment is 22 minutes, and the thickness of the first PEDOT/PSS layer is 8 nanometers. In the step (5), the temperature of the second annealing treatment is 118 ℃, the annealing time of the second annealing treatment is 20 minutes, and the thickness of the second PEDOT/PSS layer is 22 nanometers. In the step (6), the temperature of the third annealing treatment is 130 ℃, the annealing time of the third annealing treatment is 27 minutes, and the thickness of the third PEDOT/PSS layer is 27 nanometers. In the step (7), the temperature of the fourth annealing treatment is 102 ℃, the annealing time of the fourth annealing treatment is 18 minutes, and the thickness of the polyvinyl alcohol/polyethyleneimine composite layer is 1.2 nanometers. In the step (8), the front-side silver gate electrode is formed by thermally evaporating metallic silver, and the thickness of the front-side silver gate electrode is 240 nm; in the step (9), the back aluminum electrode is formed by thermally evaporating metal aluminum, and the thickness of the back silver electrode is 360 nm.
The photoelectric conversion efficiency of the organic-inorganic hybrid photovoltaic cell prepared by the method is 16.2%.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.

Claims (9)

1. A preparation method of an organic-inorganic hybrid photovoltaic cell is characterized by comprising the following steps: the method comprises the following steps:
1) providing an N-type polycrystalline silicon wafer, and performing texturing treatment on the N-type polycrystalline silicon wafer to form a texturing surface layer on the upper surface of the N-type polycrystalline silicon wafer;
2) depositing a phosphorus-doped amorphous silicon layer on the upper surface of the N-type polycrystalline silicon wafer, and then converting the phosphorus-doped amorphous silicon layer into a phosphorus-doped polycrystalline silicon layer through heat treatment, wherein the doping concentration of the phosphorus-doped polycrystalline silicon layer is less than that of the N-type polycrystalline silicon wafer;
3) depositing an inorganic insulating thin layer on the surface of the phosphorus-doped polycrystalline silicon layer, wherein the thickness of the inorganic insulating thin layer is 1-2 nanometers;
4) spin-coating Cu on the upper surface of the N-type polycrystalline silicon wafer obtained in the step 39S5PSS solution of the first PEDOT of the nanoparticles, wherein Cu in the PSS solution of the first PEDOT is9S5The concentration of the nanocrystalline is 0.05-0.1mg/ml, the rotation speed of spin coating is 5500-;
5) spin-coating Cu-containing on the upper surface of the N-type polycrystalline silicon wafer obtained in the step 49S5A second PEDOT PSS solution of nanoparticles, wherein Cu in the second PEDOT PSS solution9S5The concentration of the nanocrystalline is 0.15-0.25mg/ml, the rotation speed of spin coating is 4000-;
6) spin-coating Cu on the upper surface of the N-type polycrystalline silicon wafer obtained in the step 59S5PSS solution of third PEDOT of the nano-particles, wherein Cu in the PSS solution of the third PEDOT is9S5The concentration of the nanocrystalline is 0.3-0.5mg/ml, the rotation speed of spin coating is 3500 and 4500 revolutions per minute, and then third annealing treatment is carried out to form a third PEDOT (Poly ethylene glycol ether ketone) PSS layer;
7) sequentially spin-coating a polyvinyl alcohol solution and a polyethyleneimine solution on the back surface of the N-type polycrystalline silicon wafer, wherein the concentration of polyvinyl alcohol in the polyvinyl alcohol solution is 0.5-1mg/ml, the concentration of polyethyleneimine in the polyethyleneimine solution is 0.5-1mg/ml, the spin-coating speed is 4000-4500 rpm, and then performing fourth annealing treatment to form a polyvinyl alcohol/polyethyleneimine composite layer;
8) preparing a front silver gate electrode on the upper surface of the N-type polycrystalline silicon wafer obtained in the step 7;
9) and (4) preparing a back aluminum electrode on the lower surface of the N-type polycrystalline silicon wafer obtained in the step (8).
2. The method for preparing an organic-inorganic hybrid photovoltaic cell according to claim 1, characterized in that: in the step (2), the doping concentration of the N-type polycrystalline silicon is 1015 cm-3-1017 cm-3The doping concentration of the N-type polycrystalline silicon wafer is 1016 cm-3-1018 cm-3。
3. The method for preparing an organic-inorganic hybrid photovoltaic cell according to claim 1, characterized in that: the inorganic insulating thin layer is one of zirconia, silica and alumina.
4. The method for preparing an organic-inorganic hybrid photovoltaic cell according to claim 1, characterized in that: in the step (4), the temperature of the first annealing treatment is 120-130 ℃, the annealing time of the first annealing treatment is 15-25 minutes, and the thickness of the first PEDOT/PSS layer is 5-15 nanometers.
5. The method for preparing an organic-inorganic hybrid photovoltaic cell according to claim 1, characterized in that: in the step (5), the temperature of the second annealing treatment is 110-120 ℃, the annealing time of the second annealing treatment is 10-20 minutes, and the thickness of the second PEDOT/PSS layer is 20-30 nanometers.
6. The method for preparing an organic-inorganic hybrid photovoltaic cell according to claim 1, characterized in that: in the step (6), the temperature of the third annealing treatment is 115-135 ℃, the annealing time of the third annealing treatment is 20-30 minutes, and the thickness of the third PEDOT/PSS layer is 25-35 nm.
7. The method for preparing an organic-inorganic hybrid photovoltaic cell according to claim 1, characterized in that: in the step (7), the temperature of the fourth annealing treatment is 100-105 ℃, the annealing time of the fourth annealing treatment is 10-20 minutes, and the thickness of the polyvinyl alcohol/polyethyleneimine composite layer is 1-2 nanometers.
8. The method for preparing an organic-inorganic hybrid photovoltaic cell according to claim 1, characterized in that: in the step (8), forming the front-side silver gate electrode by thermally evaporating metal silver, wherein the thickness of the front-side silver gate electrode is 160-280 nanometers; in the step (9), the back aluminum electrode is formed by thermally evaporating metal aluminum, and the thickness of the back aluminum electrode is 300-400 nm.
9. An organic-inorganic hybrid photovoltaic cell prepared by the method of any one of claims 1-8.
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