CN108766954A - A kind of heterogeneous substrate integrated morphology and preparation method - Google Patents
A kind of heterogeneous substrate integrated morphology and preparation method Download PDFInfo
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- CN108766954A CN108766954A CN201810583888.4A CN201810583888A CN108766954A CN 108766954 A CN108766954 A CN 108766954A CN 201810583888 A CN201810583888 A CN 201810583888A CN 108766954 A CN108766954 A CN 108766954A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5387—Flexible insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76835—Combinations of two or more different dielectric layers having a low dielectric constant
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Abstract
The invention discloses a kind of heterogeneous substrate integrated morphology and preparation methods, including organic metal wiring layer and several heterogeneous substrates, and organic metal wiring layer needs the pad interconnected to be connected with each heterogeneous substrate, electrical connection between each heterogeneous substrate is realized by organic metal wiring layer, the organic metal wiring layer is completely covered on each heterogeneous substrate and needs on the face of direct interconnection, and it is overlapped on two adjacent heterogeneous substrates as a part or organic metal wiring layer for the metal wiring layer of each heterogeneous substrate and needs on the face of direct interconnection.The present invention solves the space interconnection problems between each heterogeneous substrate, gives full play to each substrate advantage, to be optimal system performance, has good economic prospect.
Description
Technical field
The invention belongs to Advanced Electronic Encapsulating field, it is related to encapsulating for semiconductor electronic micro-system, component hybrid integrated
In package substrate, and in particular to a kind of heterogeneous substrate integrated morphology and preparation method.
Background technology
Under the premise of the function and performance requirement of electronic product is continuously improved in portable intelligent system, while requiring electronics
The size and weight of product constantly reduce, it usually needs realize entire electronic system function in small space, that is, realize micro-
Type electronic system, herein we be referred to as micro-system.Complexity in view of micro-system and it is related to the diversity of device, in micro-system
May include various forms of chips, device and sub-component, it may be possible to bare chip, plastic packaging, pottery envelope or metal-back envelope；It is micro-
May include different function, the chip of unlike material, device and sub-component in system, it may be possible to MEMS, number, simulation,
It is frequency microwave, biological or other sensings；It also needs to accommodate the passive elements such as a large amount of resistance, capacitance, inductance and nothing simultaneously
Source network.The substrate of single material or single technique due to its material and corresponding substrate preparation process limitation, it is difficult to full
The demand of the pairs of substrate of the above-mentioned complicated micro-system collection of foot.It is generally necessary to be total to according to the characteristic of various substrates, a variety of substrates of selection
With complicated micro-system integration packaging is completed, reach the optimum performance of micro-system, the interconnection between substrate at this time just become there is an urgent need to
It solves the problems, such as.It is interconnected and form substrate vertical stacking by salient point between substrate or ball bond, it is big, mutual that quantity is interconnected between substrate
Even speed is high, the situation of delay requirement harshness is highly effective, but size and the matching of CTE have stringenter want between substrate
It asks, flexibility is poor.
Invention content
The purpose of the present invention is to provide a kind of heterogeneous substrate integrated morphology and preparation methods, to overcome the prior art to exist
The problem of, the present invention solves the space interconnection problems between each heterogeneous substrate, gives full play to each substrate advantage, is to be optimal
System performance, has good economic prospect.
In order to achieve the above objectives, the present invention adopts the following technical scheme that：
A kind of heterogeneous substrate integrated morphology, including organic metal wiring layer and several heterogeneous substrates, and organic metal cloth
Line layer needs the pad interconnected to be connected with each heterogeneous substrate, and the electrical connection between each heterogeneous substrate passes through organic metal wiring layer
It realizes, the organic metal wiring layer is completely covered on each heterogeneous substrate and needs on the face of direct interconnection, and as each different
It is directly mutual that a part or organic metal wiring layer for the metal wiring layer of matter substrate is overlapped on the heterogeneous substrate needs of adjacent two
On face even；
When organic metal wiring layer, which is completely covered on each heterogeneous substrate, to be needed on the face of direct interconnection, organic gold
Belonging to wiring layer can bend at each heterogeneous substrate interconnection, and the chip or device micro-group on each heterogeneous substrate are mounted in organic gold
Belong on wiring layer；
It is each heterogeneous when organic metal wiring layer, which is overlapped on two adjacent heterogeneous substrates, to be needed on the face of direct interconnection
Chip or device micro-group on substrate is on the metal wiring layer of each heterogeneous substrate surface.
Further, several heterogeneous substrates are organic substrate or several heterogeneous substrates are inorganic substrate, if or
Doing the heterogeneous existing organic substrate of substrate also has inorganic substrate；
The baseplate material difference of several heterogeneous substrates or the baseplate material part of several heterogeneous substrates are consistent, if or
The baseplate material for doing heterogeneous substrate is completely the same.
Further, several heterogeneous substrate thickness are identical or different；
Several heterogeneous substrates are regular shape or irregular shape.
Further, the heterogeneous substrate includes silicon substrate, ceramic substrate and glass substrate, the silicon substrate be without
The silicon substrate of TSV or silicon substrate with TSV, the glass substrate are the glass substrate without TGV or the glass substrate with TGV.
Further, the surface of the silicon substrate and glass substrate is provided with micro convex point, the silicon substrate and glass substrate
Surface or be internally provided with optical waveguide.
Further, in the silicon in silicon substrate through-hole TSV conductive materials of the band TSV and the glass substrate of the band TGV
Glass through-hole TGV conductive materials are metal material, semi-conducting material or modified organic material.
A kind of preparation method of heterogeneous substrate integrated morphology, includes the following steps：
Step 1：Interim positioning support plate is taken, adheres to two-sided adhesive film on a surface of positioning support plate temporarily, it is described to face
Two surfaces of Shi Dingwei support plates are flat surface；
Step 2：By several heterogeneous substrates need direct interconnection facing towards two-sided adhesive film, according to each heterogeneous substrate
Pre-designed relative position is accurately positioned each heterogeneous substrate, completes each heterogeneous substrate particular arrangement structure；
Step 3：In each heterogeneous interim bonding glue of substrate particular arrangement body structure surface spraying；
Step 4：The structure alignment that support plate and step 3 are formed is bonded, the support plate towards each heterogeneous substrate one
There is corresponding pit in face according to each heterogeneous substrate thickness, preparation so that support plate is carried with each heterogeneous substrate far from interim positioning
The surface of plate is respectively formed good bonding；And the another side of support plate is flat surface；
Step 5：Remove interim positioning support plate and it is two-sided stick film, make each heterogeneous substrate that the face of direct interconnection be needed to exist
It is exposed on same plane；
Step 6：Organic media glue-line is coated in the plane that step 5 is exposed, further filling is exposed
Out-of-flatness defect in plane exposes each heterogeneous substrate and needs the pad interconnected, wait for then in organic media glue-line windowing
After organic media curable adhesive layer, sputtering or evapontte ie meti yer prepare metal wiring layer using electric plating method, form organic metal
Wiring layer；
Step 7：Over an organic film by the surface mount of organic metal wiring layer, and it is organic film is taut flat；
Step 8：Support plate solution is bonded；
Step 9：Organic film is removed, heterogeneous substrate integrated morphology is formed.
Further, the two-sided film that sticks is light-sensitive material or thermo-sensitive material.
Further, the interim bonding glue is temperature-sensitive bonding material, photosensitive bonding material, the material for being dissolved in chemical solution
Or the material reacted with chemical solution.
Further, the material of the support plate is glass or silicon.
Compared with prior art, the present invention has technique effect beneficial below：
Heterogeneous substrate integrated morphology provided by the invention passes through mutual between the heterogeneous substrate of organic flexible material realization rigidity
Connection and electric interconnection, form hard and soft electric hybrid board, by the bendable folding endurance of organic flexible coupling part, the heterogeneous substrate collection
May be implemented to bend, be laminated and collapse at structure, to adapt to space requirement.The present invention provides heterogeneous substrate integrated morphology and solves
Space interconnection problems between each heterogeneous substrate, give full play to each substrate advantage, to be optimal system performance, have good
Economic prospect.
The preparation method of the heterogeneous substrate integrated morphology of the present invention uses wafer scale or Panel grades of techniques, passes through various bases
Rearrangement and multilayer of the plate on support plate are organic to be connected up again, realizes rebuilding between heterogeneous substrate, substrate is according to micro-system
Integrated demand carries out space rearrangement, forms effective electrical interconnection between substrate, and the space solved between each heterogeneous substrate is mutual
Even problem, gives full play to each substrate advantage, to be optimal system performance, has good economic prospect.
Description of the drawings
Fig. 1 is the diagrammatic cross-section of silicon substrate；
Fig. 2 is the diagrammatic cross-section of ceramic substrate；
Fig. 3 is the diagrammatic cross-section of glass substrate；
Fig. 4 is to adhere to two-sided adhesive film schematic diagram on a surface of positioning support plate temporarily；
Fig. 5 is by the two-sided structural schematic diagram for sticking film by different heterogeneous substrate bondings on positioning support plate temporarily；
Fig. 6 is the structural schematic diagram after the interim bonding glue of spraying；
Fig. 7 is the structural schematic diagram after being bonded support plate with Fig. 6 structures；
Fig. 8 is to take down interim positioning support plate and the two-sided structural schematic diagram sticked after film；
Fig. 9 is the structural schematic diagram that organic metal wiring layer is formed in Fig. 8 structures；
Figure 10 is by the surface mount of organic metal wiring layer schematic diagram over an organic film；
Figure 11 is structural schematic diagram after being bonded support plate solution；
Figure 12 is heterogeneous substrate integrated morphology A structural schematic diagrams；
Figure 13 is structural schematic diagram after heterogeneous substrate integrated morphology A bendings；
Figure 14 is heterogeneous substrate integrated morphology B structure schematic diagram；
Figure 15 is heterogeneous substrate integrated morphology C-structure schematic diagram；
Figure 16 is structural schematic diagram after heterogeneous substrate integrated morphology C bendings.
Wherein, 1：Without the silicon substrate of TSV；1'：Silicon substrate with TSV；12：Silicon substrate metal wiring layer；13：Silicon Wafer
Material；14：Silicon hole TSV；2：Ceramic substrate；21：The via hole of metal line interlayer；22：Ceramic substrate metal wiring layer；
23：Ceramic dielectric；3：Without the glass substrate of TGV；3'：Glass substrate with TGV；32：Glass substrate metal wiring layer；33：
Glass baseplate；34：Glass through-hole TGV；4：It is two-sided to stick film；5：Interim positioning support plate；6：Interim bonding glue；7：Support plate；8：Have
Machine metal wiring layer；9：Organic film；10：Chip or device；100：Heterogeneous substrate integrated morphology A；100a：The integrated knot of heterogeneous substrate
Structure B；100'：Heterogeneous substrate integrated morphology C.
Specific implementation mode
Present invention is further described in detail below in conjunction with the accompanying drawings：
The present invention provides a kind of heterogeneous substrate integrated morphology, can be by the substrates root such as ceramic substrate, silicon substrate, glass substrate
Space rearrangement is carried out according to the demand that micro-system integrates, and forms effective electrical interconnection between substrate.It is characteristic of the invention that by
The substrate of interconnection is not limited to same material, same thickness or similar structure.The each substrate being interconnected can be silicon, glass
Glass, aluminium oxide ceramics, aluminium nitride ceramics, silicon carbide, aluminium silicon, but not limited to this.The each substrate being interconnected can be that hard is rigid
Property substrate, can also be existing rigid substrates again flexible substrate.The each substrate being interconnected can be different thickness.It is mutual
Each substrate even can individually designed, single optimization, independent flow processing, individually test, according still further to system after test passes
Design requirement rearrangement relative position has good risk control, quality control capability.
Heterogeneous substrate provided by the invention integrates preparation method and uses wafer scale or Panel grades of techniques, passes through various substrates
Rearrangement and multilayer on support plate are organic to be connected up again, realizes rebuilding between heterogeneous substrate.It is provided by the invention heterogeneous
Substrate integrated morphology realizes interconnection and electric interconnection between the heterogeneous substrate of rigidity by organic flexible material, is formed hard and soft mixed
Close substrate, by the bendable folding endurance of organic flexible coupling part, the heterogeneous substrate integrated morphology may be implemented bending, stacking and
It collapses, to adapt to space requirement.The present invention provides heterogeneous substrate integrated morphology and preparation method solves between each heterogeneous substrate
Space interconnection problems give full play to each substrate advantage, to be optimal system performance, have good economic prospect.
Referring to Fig.1, silicon substrate includes at least Silicon Wafer material 13 and the silicon substrate on 13 1 surface of Silicon Wafer material
Metal wiring layer 12, silicon substrate can also include the conductive through hole (i.e. TSV (Through-silicon- of through-silicon wafer material
Via)), micro convex point and optical waveguide only can have metal wiring layer on silicon substrate on one side, can also two sides have metal line
Layer, the metal wiring layer are at least made of one layer of metal conducting layer and one layer of dielectric insulation layer, can also be by multiple layer metal
Conductive layer and multi-layer dielectric insulating layer is alternately laminated forms.The dielectric insulation layer material of the metal wiring layer can be nothing
Machine dielectric material (such as silica, silicon nitride, nitrogen-oxygen-silicon, but not limited to this), can be organic dielectric material (such as PI, BCB,
PBO etc., but not limited to this), it can also be the composite construction medium that inorganic medium and organic media are constituted.
Referring to Fig. 2, ceramic substrate 2 can be LTCC, HTCC, thick film ceramic, and ceramic substrate includes ceramic dielectric 23 and extremely
Few one layer of ceramic substrate metal wiring layer 22 being located on ceramic base plate surface, ceramic substrate can also include muti-layered metallic
Line, the via hole 21 of metal line interlayer, micro convex point, passive resistance, capacitance and inductance of embedment etc..
Referring to Fig. 3, glass substrate includes at least glass baseplate 33 and the glass substrate on 33 1 surface of glass baseplate
Metal wiring layer 32, glass substrate can also include the conductive through hole (i.e. TGV (Through-glass- through glass baseplate
Via)), micro convex point and optical waveguide only can have metal wiring layer on glass baseplate on one side, can also two sides have hardware cloth
Line layer, the metal wiring layer are at least made of one layer of metal conducting layer and one layer of dielectric insulation layer, can also be by multilayer gold
Belong to conductive layer and multi-layer dielectric insulating layer is alternately laminated forms.The dielectric insulation layer material of the metal wiring layer can be
Inorganic dielectric material (such as silica, silicon nitride, nitrogen-oxygen-silicon, but not limited to this), can be organic dielectric material (such as PI,
BCB, PBO etc., but not limited to this), it can also be the composite construction medium that inorganic medium and organic media are constituted.
Fig. 4 to Figure 12 provides the heterogeneous substrate such as silicon substrate, ceramic substrate and glass substrate in embodiment one and integrates preparation side
The technological process of method.
The surface attachment for positioning support plate 5 in wherein Fig. 4 temporarily two-sided sticks film 4.The two-sided film 4 that sticks is photosensitive or temperature-sensitive
Material, interim two surfaces for positioning support plate 5 are all flat surfaces.
Stick film 4 facing towards two-sided by what the heterogeneous substrate of unlike material needed direct interconnection in Fig. 5, according to each heterogeneous
The pre-designed relative position of substrate is accurately positioned each heterogeneous substrate, completes each heterogeneous substrate particular arrangement structure.It is fixed
Position is accurately less than the half of each heterogeneous substrate minimum interconnect pad, and it is minimum that preferred orientation is accurately less than each heterogeneous substrate
The a quarter of interconnect pad.The present invention is thick to the material, the technique of each substrate, each substrate that participate in integrated each substrate
There is no limit for degree.It can be inorganic substrate to participate in integrated each substrate, can also be organic substrate, can be with existing inorganic base
Plate has organic substrate again.It can also be existing rigid substrates flexible base again with rigid substrates to participate in integrated each substrate
Plate.It can be silicon, glass, aluminium oxide ceramics, aluminium nitride ceramics, LTCC, HTCC, silicon carbide, aluminium to participate in integrated each substrate
Silicon, but not limited to this.Participate in integrated each baseplate material can it is different, can also part be identical or same substrate
Material.
Fig. 6：Each interim bonding glue 6 of substrate arrangement body structure surface spraying is completed in Fig. 5.It is because should to select spraying method
Mode can not only be in each substrate surface (plane), and can form good interim bonding glue covering in each substrate side surfaces.
In spraying process, it can be completed on each substrate exposed surface temporarily by tilting Fig. 5 or angled nozzle in different directions
It is bonded the coating of glue.It is sprayed in conjunction with multipass, can further improve the coverage rate for being bonded glue temporarily in side wall.
Fig. 7：Support plate 7 is bonded with the structure alignment that above-mentioned Fig. 6 is completed.One side of the support plate 7 towards each substrate is according to each
A substrate thickness is prepared for corresponding pit, for making up the difference in thickness between each substrate so that support plate 7 and each substrate
Surface far from interim positioning support plate 5 can form good bonding；The another side of support plate 7 is smooth.Each pit on support plate 7
Size be slightly larger than the size of corresponding each substrate.The side wall of each pit can be vertical on support plate 7, can also be to tilt
, ensure that corresponding each substrate can smoothly enter into pit；The bottom of each pit is smooth on support plate 7.The preferred material of support plate 7
Material is glass and silicon.When the interim bonding glue of selection is light-sensitive material, and the light of wavelengths characteristic is needed to carry out solution bonding, support plate 7
Material be the material transparent to the light wave of above-mentioned wavelengths characteristic.
Then, take down interim positioning support plate 5 and it is two-sided stick film 4, as shown in Figure 8.So far, each substrate needs directly mutual
Face even is exposed in the same plane.
Organic media glue-line is coated in the above-mentioned plane being exposed, further fill it is above-mentioned be exposed it is flat
The defects of slit on face, exposes each substrate and needs the pad interconnected in above-mentioned organic media glue-line windowing.Organic media
After curable adhesive layer, sputtering or evapontte ie meti yer, such as Ti/Cu, TiW/Cu, but not limited to this.Metal is prepared using electric plating method
Wiring layer.If necessary to multilayer wiring, the coating of organic media glue-line, photoetching development, solidification, sputtering or evaporated metal are repeated
The techniques such as layer, plating, formation metal line finally form organic metal wiring layer 8, as shown in Figure 9.Organic media glue-line packet
PI, BCB, PBO, SU8 etc. are included, but not limited to this.The surface of organic metal wiring layer 8 can prepare dimpling lattice array, be used for core
The back bonding of piece can also prepare salient point array for finally formed heterogeneous substrate integrated morphology A 100 to outer pin.
By the bonding pad pad pasting of above-mentioned completion organic metal wiring layer 8, i.e., the surface mount of organic metal wiring layer 8 is existed
On organic film 9, organic film 9 stretches tight flat on taut loop.As shown in Figure 10.
Support plate 7 being solved after being bonded as shown in figure 11, it is related with the material properties for being bonded glue 6 temporarily that support plate 7 solves bonding pattern,
When the interim bonding glue 6 used is temperature-sensitive bonding material, the solution of support plate 7 requires heat to interim bonding 6 softening temperature of glue when being bonded,
Apply mechanical force again to take down support plate 7；When the interim bonding glue 6 used is photosensitive bonding material, the solution of support plate 7 needs spy when being bonded
Standing wave grows the light-wave irradiation of (such as ultraviolet light) doses, then applies mechanical force and take down support plate 7, and support plate 7 is to above-mentioned at this time
The transparent material of specific wavelength, such as glass, resin；When the interim bonding glue 6 of use is dissolved in certain chemical solution, or with certain chemistry
Solution reaction makes the bond strength of support plate 7 weaken to not damaged can remove, and the solution of support plate 7 needs when being bonded in above-mentioned chemical solution
Middle immersion.
Remove organic film 9 after, complete without the silicon substrate 1 of TSV, ceramic substrate 2 and without TGV glass substrate 3 it is different
Matter is integrated, as shown in figure 12.It is connected with being electrically connected between the glass substrate 3 without TGV without silicon substrate 1, the ceramic substrate 2 of TSV
Cross the realization of organic metal wiring layer 8.Because organic metal wiring layer 8 is flexible bendable, without TSV silicon substrate 1,
Ceramic substrate 2 and without TGV glass substrate 3 it is heterogeneous it is integrated after the heterogeneous substrate integrated morphology A 100 that is formed be in heterogeneous base
It is bent at plate interconnection, as shown in figure 13.Micro- assembling form of chip can be lead on heterogeneous substrate integrated morphology A100
Be bonded, can also be back bonding, can also be Surface Mount welding or Surface Mount be bonded.The integrated knot of heterogeneous substrate during micro-group dress
Each heterogeneous substrate is in horizontality in structure A 100, chip is micro- be completed after, can be integrated to heterogeneous substrate according to demand
Structure A100 is bent.The chip and device that micro-group fills on heterogeneous substrate integrated morphology A100 can be bare die, can also be
Packaged chip, device and sub-component.
Figure 14 is the heterogeneous substrate integrated morphology B100a of another silicon substrate, ceramic substrate and glass substrate.With embodiment
The covering of organic metal wiring layer 8 is without the silicon substrate 1 of TSV, ceramic substrate 2 and without 3 whole table of glass substrate of TGV in one
Face, and as the metal line without the silicon substrate 1 of TSV, ceramic substrate 2 and each heterogeneous substrate of glass substrate 3 without TGV
Layer a part, without the silicon substrate 1 of TSV, ceramic substrate 2 and without TGV each heterogeneous base chip on board of glass substrate 3 and
Device is that micro-group is different on organic metal wiring layer 8, and organic metal wiring layer 8 is only covered without TSV's in embodiment two
A part for silicon substrate 1, ceramic substrate 2 and each heterogeneous substrate edges of glass substrate 3 without TGV, organic metal wiring layer 8
Only as the interconnecting parts between each heterogeneous substrate, without the silicon substrate 1 of TSV, ceramic substrate 2 and without the glass substrate 3 of TGV
The micro-group of each heterogeneous base chip on board and device is on the metal wiring layer of each heterogeneous substrate surface, with organic metal cloth
Line layer 8 is unrelated.
Figure 15 is the heterogeneous substrate integrated morphology of the silicon substrate 1 ' with TSV, ceramic substrate 2 and the glass substrate 3 ' with TGV
C100'.Glass through-hole TGV34 conductive materials can in silicon hole TSV14 conductive materials and glass substrate in silicon substrate 1 ' with TSV
It can also be the semi-conducting materials such as DOPOS doped polycrystalline silicon, doped monocrystalline silicon to be the metal materials such as copper, tungsten, can also be carbon nanometer
The modified organic materials such as pipe, electroconductive resin.Silicon substrate 1 ' with TSV, ceramic substrate 2 and the glass substrate 3 ' with TGV at this time
There is metal line on two surfaces, and two surfaces of the silicon substrate 1 ' with TSV, ceramic substrate 2 and the glass substrate 3 ' with TGV are all
It can be with assembling chip and device.
After Figure 16 is heterogeneous substrate integrated morphology C100 ' over-assembles chip or device 10, it can be carried out according to application demand
Bending and stacking, the stereoscopic three-dimensional for forming electronic system is integrated, to adapt to application space.
Heterogeneous substrate integrated morphology and preparation method disclosed by the invention, the hard and soft mixing being applicable not only between heterogeneous substrate
It is integrated, the hard and soft hybrid integrated being also applied between homogeneity substrate.
The shape of each heterogeneous substrate such as above-mentioned silicon substrate, ceramic substrate, glass substrate is arbitrary, and can be regular shape
Shape, such as rectangle, square, polygon, circle, can also be irregular shape.Above-mentioned heterogeneous substrate can be a sheet body
Material, such as sheet metal, sheet glass, resin sheet, but not limited to this.
Claims (10)
1. a kind of heterogeneous substrate integrated morphology, which is characterized in that including organic metal wiring layer (8) and several heterogeneous substrates,
And organic metal wiring layer (8) needs the pad interconnected to be connected with each heterogeneous substrate, the connection that is electrically connected between each heterogeneous substrate
Organic metal wiring layer (8) realization is crossed, it is directly mutual that the organic metal wiring layer (8) is completely covered on each heterogeneous substrate needs
A part or organic metal wiring layer (8) on face even, and as the metal wiring layer of each heterogeneous substrate are overlapped on adjacent
Two heterogeneous substrates need on the face of direct interconnection；
When organic metal wiring layer (8), which is completely covered on each heterogeneous substrate, to be needed on the face of direct interconnection, organic gold
Belonging to wiring layer (8) can bend at each heterogeneous substrate interconnection, the chip on each heterogeneous substrate or device (10) micro-group dress
On organic metal wiring layer (8)；
It is each heterogeneous when organic metal wiring layer (8), which is overlapped on two adjacent heterogeneous substrates, to be needed on the face of direct interconnection
Chip or device (10) micro-group on substrate is on the metal wiring layer of each heterogeneous substrate surface.
2. a kind of heterogeneous substrate integrated morphology according to claim 1, which is characterized in that several heterogeneous substrates are
Organic substrate or several heterogeneous substrates, which are inorganic substrate or several existing organic substrates of heterogeneous substrate, also inorganic substrate；
The baseplate material difference of several heterogeneous substrates or the baseplate material part of several heterogeneous substrates are consistent or several different
The baseplate material of matter substrate is completely the same.
3. a kind of heterogeneous substrate integrated morphology according to claim 1, which is characterized in that several heterogeneous substrate thickness
It is identical or different；
Several heterogeneous substrates are regular shape or irregular shape.
4. a kind of heterogeneous substrate integrated morphology according to claim 1, which is characterized in that the heterogeneous substrate includes silicon substrate
Plate, ceramic substrate and glass substrate, the silicon substrate is the silicon substrate (1 ') without the silicon substrate (1) of TSV or with TSV, described
Glass substrate is the glass substrate (3 ') without the glass substrate (3) of TGV or with TGV.
5. a kind of heterogeneous substrate integrated morphology according to claim 4, which is characterized in that the silicon substrate and glass substrate
Surface be provided with micro convex point, the surface of the silicon substrate and glass substrate or be internally provided with optical waveguide.
6. a kind of heterogeneous substrate integrated morphology according to claim 4, which is characterized in that the silicon substrate of the band TSV
Glass through-hole TGV (34) conductive material in the glass substrate (3 ') of silicon hole TSV (14) conductive materials and the band TGV in (1 ')
For metal material, semi-conducting material or modified organic material.
7. a kind of preparation method of heterogeneous substrate integrated morphology, which is characterized in that include the following steps：
Step 1：Interim positioning support plate (5) is taken, adheres to two-sided adhesive film (4) on a surface of positioning support plate (5) temporarily,
Two surfaces of the interim positioning support plate (5) are flat surface；
Step 2：By several heterogeneous substrates need direct interconnection facing towards two-sided adhesive film (4), it is pre- according to each heterogeneous substrate
First designed relative position is accurately positioned each heterogeneous substrate, completes each heterogeneous substrate particular arrangement structure；
Step 3：In each heterogeneous interim bonding glue (6) of substrate particular arrangement body structure surface spraying；
Step 4：Support plate (7) is bonded with the structure alignment that step 3 is formed, the support plate (7) is towards each heterogeneous substrate
On one side according to each heterogeneous substrate thickness, preparation has corresponding pit so that support plate (7) is with each heterogeneous substrate far from interim fixed
The surface of position support plate (5) is respectively formed good bonding；And the another side of support plate (7) is flat surface；
Step 5：Remove interim positioning support plate (5) and it is two-sided stick film (4), so that each heterogeneous substrate is needed the face of direct interconnection
It is exposed in the same plane；
Step 6：Organic media glue-line is coated in the plane that step 5 is exposed, and further fills the plane being exposed
On out-of-flatness defect expose each heterogeneous substrate then in organic media glue-line windowing and need the pad interconnected, wait for organic
After medium curable adhesive layer, sputtering or evapontte ie meti yer prepare metal wiring layer using electric plating method, form organic metal line
Layer (8)；
Step 7：By the surface mount of organic metal wiring layer (8) on organic film (9), and organic film (9) is taut flat；
Step 8：Support plate (7) is solved and is bonded；
Step 9：Organic film (9) is removed, heterogeneous substrate integrated morphology is formed.
8. a kind of preparation method of heterogeneous substrate integrated morphology according to claim 7, which is characterized in that described two-sided glutinous
Membrane (4) is light-sensitive material or thermo-sensitive material.
9. a kind of preparation method of heterogeneous substrate integrated morphology according to claim 7, which is characterized in that the ephemeral key
It is temperature-sensitive bonding material, photosensitive bonding material, the material for being dissolved in chemical solution or the material reacted with chemical solution to close glue (6).
10. a kind of preparation method of heterogeneous substrate integrated morphology according to claim 7, which is characterized in that the support plate
(7) material is glass or silicon.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210118756A1 (en) * | 2019-10-21 | 2021-04-22 | Intel Corporation | Hybrid interposer of glass and silicon to reduce thermal crosstalk |
| CN114938211A (en) * | 2022-07-25 | 2022-08-23 | 西南应用磁学研究所(中国电子科技集团公司第九研究所) | Drive circuit and miniaturized gyromagnetic filter assembly composed of same |
| JP2023065290A (en) * | 2021-10-27 | 2023-05-12 | 珠海越亜半導体股▲分▼有限公司 | Embedded package structure and manufacturing method for the same |
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| US20180160534A1 (en) * | 2016-12-01 | 2018-06-07 | Schlumberger Technology Corporation | Downhole equipment using flexible circuits |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210118756A1 (en) * | 2019-10-21 | 2021-04-22 | Intel Corporation | Hybrid interposer of glass and silicon to reduce thermal crosstalk |
| JP2023065290A (en) * | 2021-10-27 | 2023-05-12 | 珠海越亜半導体股▲分▼有限公司 | Embedded package structure and manufacturing method for the same |
| JP7336570B2 (en) | 2021-10-27 | 2023-08-31 | 珠海越亜半導体股▲分▼有限公司 | Embedded package structure and fabrication method thereof |
| CN114938211A (en) * | 2022-07-25 | 2022-08-23 | 西南应用磁学研究所(中国电子科技集团公司第九研究所) | Drive circuit and miniaturized gyromagnetic filter assembly composed of same |
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|---|---|
| CN108766954B (en) | 2020-05-22 |
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