CN108761997A - The preparation method of light shield and thin film transistor (TFT) - Google Patents
The preparation method of light shield and thin film transistor (TFT) Download PDFInfo
- Publication number
- CN108761997A CN108761997A CN201810569531.0A CN201810569531A CN108761997A CN 108761997 A CN108761997 A CN 108761997A CN 201810569531 A CN201810569531 A CN 201810569531A CN 108761997 A CN108761997 A CN 108761997A
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- CN
- China
- Prior art keywords
- photomask
- segment
- light shield
- laciniation
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010409 thin film Substances 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000012528 membrane Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 7
- 238000002834 transmittance Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 11
- 238000013461 design Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000001154 acute effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Abstract
The present invention provides a kind of light shield, including the first photomask and the second photomask that is parallel with first photomask and being oppositely arranged, first photomask includes the first segment with the second photomask face, the first segment includes towards the first side of second photomask, the first side is towards the second photomask laciniation outstanding, second photomask includes the second segment opposite with the first segment interval, the second segment includes towards the second side of the first segment, the second side is the laciniation opposite with the first side.The present invention also provides a kind of preparation methods of thin film transistor (TFT), it is exposed using above-mentioned light shield, light interferes when by the laciniation of the light shield, so that through the light shield, finally the pattern of exposure out is linear, it ensure that the uniform wide of raceway groove between the source electrode and drain electrode of the small size thin film transistor (TFT) prepared, improve the electrical property of thin film transistor (TFT).
Description
Technical field
The present invention relates to display technology field, more particularly to the preparation method of a kind of light shield and thin film transistor (TFT).
Background technology
Currently, Thin Film Transistor-LCD (TFT-LCD, Thin Film Transistor-Liquid Crystal
Display it) has been widely used on the electronical displays product such as television set, computer screen, laptop, mobile phone.?
In TFT-LCD display fields, with the continuous improvement to screen resolution, Pixel Dimensions constantly reduce, and are carried to design and processing procedure
Higher requirement is gone out.Film crystal diode is the structure that size is smaller in pixel, though size is small, is charged for pixel
To vital effect.Therefore there is very high requirement to the control of film crystal diode size.
In the thin film transistor (TFT) of pixel, general there are one smallest size of 3T (third TFT), form 3T source electrodes and leakage
The mask set of pole is generally as shown in Figure 1.But due to the fillet effect in exposure, the source electrode and drain electrode of this small size TFT
It can be deformed in last forming, as shown in Figure 2.At this point, the channel portion between source electrode and drain electrode is because of deformation so that different portions
Position such as difference between L-mid and L-tail can become larger, thus 3T devices can be caused to be set with raceway groove during practical function
Evaluation is widely different, it is therefore desirable to new design method, to ensure the stability of channel width.
Invention content
The purpose of the present invention is to provide a kind of light shields, ensure raceway groove when forming the source electrode and drain electrode of thin film transistor (TFT)
It is uniformly wide.
The present invention also provides a kind of preparation methods of thin film transistor (TFT).
Light shield of the present invention includes the first photomask and the second screening that is parallel with first photomask and being oppositely arranged
Light film, first photomask include the first segment with the second photomask face, and the first segment includes towards described
The first side of two photomasks, the first side are towards second photomask laciniation outstanding described the
Two photomasks include the second segment opposite with the first segment interval, and the second segment includes the second side towards the first segment
Side, the second side are the laciniation opposite with the first side.
Wherein, the first segment includes the first end face being connect with the first side, plane where the first end face
Intersect with the vertex of sawtooth in the laciniation of the first side, the second segment includes being connect with the second side
Second end face, plane where the second end face intersect with the vertex of sawtooth in the laciniation of the second side.
Wherein, the light shield includes semi-permeable membrane, and first photomask and second photomask are set to the semi-permeable membrane
Surface on.
Wherein, in the laciniation of the first side and the second side height of sawtooth at 0.5 μm~2.0 μm
Between.
Wherein, the semi-permeable membrane include it is parallel and be oppositely arranged first while and when second, first photomask includes
The third section being oppositely arranged with the first segment, the third section extend the first side of the semi-permeable membrane, second shading
Film includes the 4th section be oppositely arranged with the second segment, the 4th section of second side for extending the semi-permeable membrane.
Wherein, the first end face of first segment described in first photomask and the second side interval of the semi-permeable membrane are set
It sets, the second end face of second segment described in second photomask and the first side interval of the semi-permeable membrane are arranged.
Wherein, the first segment includes the third side being oppositely arranged with the first side, and the third side is the back of the body
From first side laciniation outstanding, the second segment includes the 4th side being oppositely arranged with the second side
Side, the four side are away from second side laciniation outstanding.
Wherein, the plane where the first end face of the first segment and sawtooth in the laciniation of the third side
Vertex is intersected, and the second end face of the second segment intersects with the vertex of sawtooth in the laciniation of the four side.
Wherein, the light transmittance of first photomask and second photomask is 0%.
The preparation method of thin film transistor (TFT) of the present invention, including：
One substrate is provided；
The first metal layer is formed on the substrate；
Patterned process is carried out to form source electrode and drain electrode to the first metal layer using light shield, wherein the light shield
For above-mentioned light shield.
Laciniation is arranged in the relative position of the first photomask and the second photomask in light shield of the present invention, is exposing
In the process, light is interfered when passing through laciniation so that through the light shield, finally the pattern of exposure out is straight line
Shape, using the light compensating effect of laciniation, ensure that the small size thin film transistor (TFT) prepared source electrode and drain electrode it
Between raceway groove it is uniform wide, improve the electrical property of thin film transistor (TFT).
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
Obtain other attached drawings according to these attached drawings.
Fig. 1 is the structural schematic diagram of light shield in the prior art.
Fig. 2 is the source electrode and drain electrode figure being prepared using light shield described in Fig. 1.
Fig. 3 is the structural schematic diagram of the first embodiment of light shield of the present invention.
Fig. 4 is the structural schematic diagram of second of embodiment of light shield of the present invention.
Fig. 5 is the flow chart of film crystal tube preparation method of the present invention.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without creative efforts
Embodiment shall fall within the protection scope of the present invention.
Referring to Fig. 3, better embodiment of the present invention provides a kind of light shield 100, the light shield 100 is used for thin film transistor (TFT)
Processing procedure in form specific figure, be particularly suitable for preparing the smaller thin film transistor (TFT) of size.The light shield 100 includes first
Photomask 10 and the second photomask 20 that is parallel with first photomask 10 and being oppositely arranged, first photomask 10 include
With the first segment 11 of 20 face of the second photomask, the first segment 11 includes towards the first side of second photomask 20
Side 111, the first side 111 are towards second photomask, 20 laciniation outstanding, second photomask 20
Include the opposite second segment 21 in interval with the first segment 11, the second segment 21 includes towards the second of the first segment 11
Side 211, the second side 211 are the laciniation opposite with the first side 111.
When in thin film transistor (TFT) processing procedure using light shield of the present invention to formed metal layer carry out Patternized technique with shape
During at source electrode and drain electrode, due to the presence of the laciniation in light shield on the first photomask and the second photomask, make
Light can be interfered when passing through laciniation so that the pattern between finally formed source electrode and drain electrode on the inside of raceway groove is
Originally design is linear, and jagged compensation principle makes the edge uniformity of channel pattern between source electrode and drain electrode more
It is good.
The first segment 11 includes the first end face 112 being connect with the first side 111,112 institute of the first end face
Intersect with the vertex of sawtooth in the laciniation of the first side 111 in plane, the second segment 21 includes and described
The second end face 212 that dual side-edge 211 connects, the zigzag knot of the second end face 212 place plane and the second side 211
The vertex intersection of sawtooth in structure.In the present embodiment, in the laciniation of the first side 111 and the second side 211
Sawtooth is acute angle shape, and the acute angle shape saw-tooth apex of bottom is located at described first in the laciniation of the first side 111
In the first end face 112 of section 11, the vertex of the acute angle shape sawtooth of the top is located in the laciniation of the second side 211
In the second end face 212 of the second segment 21.It is understood that in the other embodiment of the present embodiment, described first
Sawtooth may be square or obtuse angle shape in the laciniation of side 111 and the second side 211, as long as can make light
It can be interfered when passing through sawtooth pattern so that finally formed pattern is straight line.Further, the first side 111
And in the laciniation of the second side 211 sawtooth height between 0.5 μm~2.0 μm, it is preferred that the sawtooth
Height is at 1.0 μm~1.5 μm or so.Further, first photomask 10 and second photomask 20 are by metal material
Chromium is made, light transmittance 0%.
The light shield 100 includes semi-permeable membrane 30, and first photomask 10 and second photomask 20 are set to described half
On the surface of permeable membrane 30.Specifically, the semi-permeable membrane 30 include it is parallel and be oppositely arranged first at 31 and second 32, it is described
First photomask 10 includes the third end 12 being oppositely arranged with the first segment 11, and the semi-permeable membrane is extended at the third end 12
30 the first side 31, second photomask 20 include the 4th end 22 being oppositely arranged with the second segment 21, the 4th end
22 extend the second side 32 of the semi-permeable membrane 30, to form the complete source electrode and drain electrode of shape in Patternized technique.Into one
Step, the first end face 112 of first segment 11 described in first photomask 10 and the second side 32 of the semi-permeable membrane 30 are spaced
Setting, the second end face 212 of second segment 21 described in second photomask 20 and the first side 31 of the semi-permeable membrane 30 are spaced
Setting, to reduce the etch quantity in source electrode and drain electrode forming process.In general, the semi-permeable membrane 30 by crome metal oxide
It is made, light transmittance is less than 1, raising resolution ratio poor to improve pixel terminal.In the present embodiment, the light transmission of the semi-permeable membrane 30
Rate is preferably 40%, and the light transmittance of semi-permeable membrane 30 is not limited in 40% in light shield of the present invention 100.
Further, the semi-permeable membrane 30 further include connect described first while 31 and it is described second while 32 33 He of third side
4th side 34, the third while 33 with the described 4th while it is 34 parallel and be oppositely arranged.Join Fig. 1 again, in light shield 100 of the present invention
The first embodiment in, the first segment 11 of first photomask 10 includes be oppositely arranged with the first side 111
Three sides 113, the third side 113 are straight line, and the third side 113 is aligned with the third side 33 of the semi-permeable membrane 30,
The second segment 21 of second photomask 20 includes the four side 213 being oppositely arranged with the second side 211, and the described 4th
Side 213 is straight line, and the four side 213 is aligned with the 4th side 34 of the semi-permeable membrane 30.
Referring to Fig. 4, in second of embodiment of light shield 100 of the present invention, it is different from the first above-mentioned embodiment
Place is that the third side 113 is away from 111 laciniation outstanding of the first side, the first end face 112
Place plane intersects with the vertex of sawtooth in the laciniation of the third side 113, and the four side 213 is away from institute
State 211 laciniation outstanding of second side, the sawtooth of the second end face 212 place plane and the four side 213
The vertex intersection of sawtooth in shape structure, so that forming the straight line that the pattern between source electrode and drain electrode on the outside of raceway groove is design originally
Shape further improves channel pattern between source electrode and drain electrode, improves the electric property of the thin film transistor (TFT) of preparation.Equally
, the height of sawtooth is excellent between 0.5 μm~2.0 μm in the laciniation of the third side 113 and four side 114
Choosing, the size of the sawtooth is at 1.0 μm~1.5 μm or so.
Laciniation is arranged in the relative position of the first photomask and the second photomask in light shield of the present invention, makes
When exposing the source electrode and drain electrode to form thin film transistor (TFT) with light shield, light passes through after being interfered by the sawtooth of laciniation
Semi-permeable membrane is to form linear pattern, and laciniation end corresponds to the vertex of sawtooth and compensates for fillet in exposure process
Effect so that finally formed pattern is more nearly right angle, ensure that when forming size smaller thin film transistor (TFT) source electrode and
Raceway groove is uniform wide between drain electrode, improves the electric property of thin film transistor (TFT).
Referring to Fig. 5, the present invention also provides a kind of preparation method of thin film transistor (TFT), it is used to prepare the smaller film of size
Transistor, such as smallest size of third thin film transistor (TFT) in pixel thin film transistor.The preparation method of the thin film transistor (TFT)
Including：
S1 provides a substrate.The substrate includes underlay substrate, the grid on the underlay substrate and covering grid
Gate insulating layer.
S2 forms the first metal layer on the substrate.Specifically, using physical vapour deposition (PVD), chemical vapor deposition or
Electronics evaporation coating technique forms the first metal layer on the substrate, the material of the first metal layer include and be not limited to Al, Ag,
One or more conductive materials such as Cu, Mo or Ti.
S3 carries out patterned process to form source electrode and drain electrode using light shield to the first metal layer.Wherein, the light
Cover is above-mentioned light shield 100.Specifically, the patterned process includes coating photoresist, exposure, etching and removing photoresistance, described
It is exposed using above-mentioned light shield 100 in step of exposure so that the raceway groove between the source electrode and drain electrode of formation is uniformly wide, favorably
In the electric property for improving thin film transistor (TFT).
It should be noted that the preparation method of thin film transistor (TFT) described herein further includes in the source electrode and the leakage
Other functional layers such as insulating layer, buffer layer, passivation layer are formed on extremely to form complete thin-film transistor structure, the application is herein
It does not do and specifically repeats.
The above disclosure is only the preferred embodiments of the present invention, cannot limit the right model of the present invention with this certainly
It encloses, those skilled in the art can understand all or part of the processes for realizing the above embodiment, and is wanted according to right of the present invention
Equivalent variations made by asking, still belong to the scope covered by the invention.
Claims (10)
1. a kind of light shield, which is characterized in that the light shield includes the first photomask and parallel and opposite with first photomask
The second photomask being arranged, first photomask include the first segment with the second photomask face, the first segment packet
The first side towards second photomask is included, the first side is towards second photomask zigzag outstanding
Structure, second photomask include the second segment opposite with the first segment interval, and the second segment includes towards described
One section of second side, the second side are the laciniation opposite with the first side.
2. light shield as described in claim 1, which is characterized in that the first segment includes first connect with the first side
End face, plane where the first end face intersect with the vertex of sawtooth in the laciniation of the first side, and described second
Section includes the second end face being connect with the second side, the zigzag of plane and the second side where the second end face
The vertex intersection of sawtooth in structure.
3. light shield as claimed in claim 2, which is characterized in that the light shield includes semi-permeable membrane, first photomask and institute
The second photomask is stated on the surface of the semi-permeable membrane.
4. light shield as described in claim 1, which is characterized in that the laciniation of the first side and the second side
The height of middle sawtooth is between 0.5 μm~2.0 μm.
5. light shield as claimed in claim 3, which is characterized in that the semi-permeable membrane include the first side that is parallel and being oppositely arranged and
Second side, first photomask include the third section being oppositely arranged with the first segment, and the third section extends described half
First side of permeable membrane, second photomask include the 4th section be oppositely arranged with the second segment, and described 4th section is extended
Second side of the semi-permeable membrane.
6. light shield as claimed in claim 5, which is characterized in that the first end face of first segment described in first photomask with
Second side interval of the semi-permeable membrane is arranged, the second end face of second segment described in second photomask and the semi-permeable membrane
First side interval is arranged.
7. light shield as claimed in claim 2, which is characterized in that the first segment includes being oppositely arranged with the first side
Third side, the third side be away from first side laciniation outstanding, the second segment include with it is described
The four side that second side is oppositely arranged, the four side are away from second side laciniation outstanding.
8. light shield as claimed in claim 7, which is characterized in that plane where the first end face of the first segment and described the
The vertex intersection of sawtooth, the zigzag of the second end face of the second segment and the four side in the laciniation of three sides
The vertex intersection of sawtooth in structure.
9. such as claim 1~8 any one of them light shield, which is characterized in that first photomask and second shading
The light transmittance of film is 0%.
10. a kind of preparation method of thin film transistor (TFT), which is characterized in that including：
One substrate is provided；
The first metal layer is formed on the substrate；
Patterned process is carried out to form source electrode and drain electrode to the first metal layer using light shield, wherein the light shield is power
Profit requires 1~9 any one of them light shield.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810569531.0A CN108761997A (en) | 2018-06-05 | 2018-06-05 | The preparation method of light shield and thin film transistor (TFT) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810569531.0A CN108761997A (en) | 2018-06-05 | 2018-06-05 | The preparation method of light shield and thin film transistor (TFT) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108761997A true CN108761997A (en) | 2018-11-06 |
Family
ID=63999852
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810569531.0A Withdrawn CN108761997A (en) | 2018-06-05 | 2018-06-05 | The preparation method of light shield and thin film transistor (TFT) |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108761997A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113467181A (en) * | 2021-06-23 | 2021-10-01 | 惠科股份有限公司 | Mask, manufacturing method of array substrate and array substrate |
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| CN102749801A (en) * | 2012-06-29 | 2012-10-24 | 北京京东方光电科技有限公司 | Mask plate |
| CN105093813A (en) * | 2015-09-11 | 2015-11-25 | 京东方科技集团股份有限公司 | Photomask plate and exposure system |
| CN106019815A (en) * | 2016-07-13 | 2016-10-12 | 武汉华星光电技术有限公司 | Photomask with exposure correction function |
| CN106054516A (en) * | 2016-05-30 | 2016-10-26 | 京东方科技集团股份有限公司 | Mask, array substrate, manufacturing method of array substrate and display device |
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2018
- 2018-06-05 CN CN201810569531.0A patent/CN108761997A/en not_active Withdrawn
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101566790A (en) * | 2008-04-22 | 2009-10-28 | 上海天马微电子有限公司 | Mask plate for producing liquid crystal display panel |
| CN102749801A (en) * | 2012-06-29 | 2012-10-24 | 北京京东方光电科技有限公司 | Mask plate |
| CN105093813A (en) * | 2015-09-11 | 2015-11-25 | 京东方科技集团股份有限公司 | Photomask plate and exposure system |
| CN106054516A (en) * | 2016-05-30 | 2016-10-26 | 京东方科技集团股份有限公司 | Mask, array substrate, manufacturing method of array substrate and display device |
| CN106019815A (en) * | 2016-07-13 | 2016-10-12 | 武汉华星光电技术有限公司 | Photomask with exposure correction function |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113467181A (en) * | 2021-06-23 | 2021-10-01 | 惠科股份有限公司 | Mask, manufacturing method of array substrate and array substrate |
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