CN108754613A - A kind of crystalline material melting method and melting unit - Google Patents
A kind of crystalline material melting method and melting unit Download PDFInfo
- Publication number
- CN108754613A CN108754613A CN201810606969.1A CN201810606969A CN108754613A CN 108754613 A CN108754613 A CN 108754613A CN 201810606969 A CN201810606969 A CN 201810606969A CN 108754613 A CN108754613 A CN 108754613A
- Authority
- CN
- China
- Prior art keywords
- crystalline material
- crucible
- heater
- bubble
- fusing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
Abstract
The invention discloses a kind of crystalline material melting method and melting units, by the way that at least two sections of heaters are arranged from bottom to top outside crucible, what is be spaced successively from bottom to top heats crucible, the crystalline material in crucible is set to be melted since bottom first, and gradually fusing upwards, until all fusings；Crystalline material is in fusion process, bubble gas can be outward escaped from the gap between the unfused crystalline material in top up to the crystalline material of the top melts, it can ensure to be free of gas in the crystalline material after fusing, the artificial crystal material internal bubble occurred and hole problem in growth course are avoided, the quality and yield rate of artificial crystal material are improved.
Description
Technical field
The present invention relates to artificial crystal growth technical field, more particularly to a kind of crystalline material melting method and fusing are set
It is standby.
Background technology
The artificial crystal materials such as semi-conducting material, photoelectron material often will appear bubble, hole etc. in growth course
Quality problems seriously affect the quality and yield rate of material.In order to reduce the bubble and hole in artificial crystal material, improve
The quality and yield rate of artificial crystal material need the growing method for improving artificial crystal material.
Invention content
The object of the present invention is to provide a kind of crystalline material melting method and melting unit, solve artificial brilliant in the prior art
Bubble and hole problem existing for body material internal improve the quality and yield rate of artificial crystal growth.
In order to achieve the above objectives, the technical solution adopted by the present invention is：
A kind of crystalline material melting method, the crystalline material in heating crucible, makes it gradually melt from bottom to top, lower section fusing
Bubble in crystalline material rises, and is escaped outward from the gap between the unfused crystalline material in top；Until the top
Crystalline material melts, and the bubble in the crystalline material of the top fusing rises, and is escaped outward from the crucible.
Preferably, at least two sections heating for crucible described in independent heating are set from bottom to top outside the crucible
Device.
It is highly preferred that first turning on the heater of lower section, it is made to melt corresponding lower square crystal material in the crucible
Material, and the heater of non-fusible top corresponding top crystalline material in the crucible, the crystal material of lower section fusing
Bubble in material rises, and is escaped outward from the gap between the unfused crystalline material in top；Then the described of top is opened
Heater makes it melt corresponding top crystalline material in the crucible, and the bubble in the crystalline material of top fusing rises, from
It is escaped outward in the crucible.
A kind of crystalline material melting unit, including crucible, the heating mechanism being set to outside the crucible, the heating mechanism
Two sections of heaters for crucible described in independent heating are included at least from bottom to top.
Preferably, when the heating mechanism work, at least two sections of heaters from bottom to top open successively by interval.
Preferably, the heater is located on the outside circumference of the crucible, between the heater and the crucible between
Gap is distributed.
Preferably, the heater coaxially extends with the crucible.
Due to the application of the above technical scheme, the present invention has following advantages compared with prior art：A kind of crystalline substance of the present invention
Body material melting method and melting unit, by the way that at least two sections of heaters are arranged from bottom to top outside crucible, from bottom to top according to
Minor tick heats crucible, and the crystalline material in crucible is made to be melted since bottom, and gradually fusing upwards, until complete
It melts in portion；In fusion process, bubble gas can smoothly be discharged crystalline material upwards, ensure in the crystalline material after fusing not
Containing gas, the artificial crystal material internal bubble occurred and hole problem in growth course are avoided, artificial crystal material is improved
Quality and yield rate.
Description of the drawings
Attached drawing 1 is the structural schematic diagram of apparatus of the present invention.
Wherein：1, crucible；2, heater；3, the crystalline material melted；4, unfused crystalline material.
Specific implementation mode
The technical solution of the present invention will be further described below with reference to the accompanying drawings.
It is shown in Figure 1, a kind of above-mentioned crystalline material melting unit, including crucible 1, the heater outside crucible 1
Structure, heating mechanism include at least two sections of heaters 2 for being used for independent heating crucible 1 from bottom to top.In the present embodiment, heater
Structure includes three sections of heaters 2, and every section of heater 2 is located on the outside circumference of crucible 1；The inside circumference of every section of heater 2 is equal
The gap distribution between the outside circumference of crucible 1；Every section of heater 2 with crucible 1 it is coaxial extend.Every section of heater 2 is one by one
The corresponding crystalline material for heating corresponding position in fusion crucible 1.
Shown in Figure 1, crucible 1 includes the crystalline material 3 melted and unfused crystalline material 4.
In the present embodiment, when heating mechanism works, three sections of heaters 2 from bottom to top open successively by interval, when interval
Between for lower section 2 corresponding crucible 1 of heater in crystalline material fusing and gas therein discharge needed for time.
Crystalline material melt-through and when solidifying, since there is crucible 1 certain height, part bubble to have little time to escape,
It can be retained in the crystalline material of solidification, form bubble or hole, seriously affect the quality and yield rate of crystalline material.Pass through
To crystalline material gradually heating fusing from bottom to top, it is ensured that bubble therein can smoothly be discharged upwards, ensure the crystalline substance after fusing
Gas is free of in body material, is avoided the artificial crystal material internal bubble occurred and hole problem in growth course, is improved
The quality and yield rate of artificial crystal material.
The course of work of lower the present embodiment is illustrated in detail below：
Three sections of heaters 2 for independent heating crucible 1 are set from bottom to top outside crucible 1；
It is first turned on hypomere heater, makes the crystalline material of its 1 lower part of fusion crucible, the temperature of hypomere heater is controlled, makes it
It is unable to the crystalline material at 1 middle part of fusion crucible, the bubble in the crystalline material of lower part fusing rises, from the unfused crystal in top
It is escaped outward in gap between material, until bubble is all discharged；
Then Mid-section heating device is opened, makes the crystalline material at its 1 middle part of fusion crucible, controls the temperature of Mid-section heating device, make it
It is unable to the crystalline material on 1 top of fusion crucible, the bubble in the crystalline material of middle part fusing rises, from the unfused crystal in top
It is escaped outward in gap between material, until bubble is all discharged；
Epimere heater is finally opened, the crystalline material on its 1 top of fusion crucible, the bubble in the crystalline material of top fusing are made
Rise, is escaped outward from crucible 1.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
Scholar can understand present disclosure and be implemented, and it is not intended to limit the scope of the present invention, all according to the present invention
Equivalent change or modification made by Spirit Essence should all cover within the scope of the present invention.
Claims (7)
1. a kind of crystalline material melting method, it is characterised in that：Crystalline material in heating crucible makes it gradually melt from bottom to top
Change, the bubble in the crystalline material of lower section fusing rises, and is escaped outward from the gap between the unfused crystalline material in top；
Until the crystalline material of the top melts, the bubble in the crystalline material of the top fusing rises, to escaping from the crucible
Go out.
2. a kind of crystalline material melting method according to claim 1, it is characterised in that：Outside the crucible from lower and
Heater of at least two sections of the upper setting for crucible described in independent heating.
3. a kind of crystalline material melting method according to claim 2, it is characterised in that：The described of lower section is first turned on to add
Hot device makes it melt corresponding lower section crystalline material in the crucible, and the heater of non-fusible top is in the earthenware
Corresponding top crystalline material in crucible, lower section fusing crystalline material in bubble rise, from the unfused crystalline material in top
Between gap in escape outward；Then the heater for opening top, makes it melt corresponding upper prismatic crystal in the crucible
Body material, top fusing crystalline material in bubble rise, escaped outward from the crucible.
4. a kind of crystalline material melting unit, it is characterised in that：Including crucible, the heating mechanism being set to outside the crucible, institute
It states heating mechanism and includes at least two sections of heaters for crucible described in independent heating from bottom to top.
5. a kind of crystalline material melting unit according to claim 4, it is characterised in that：When the heating mechanism work,
At least two sections of heaters from bottom to top open successively by interval.
6. a kind of crystalline material melting unit according to claim 4, it is characterised in that：The heater is located on described
The outside circumference of crucible, gap distribution between the heater and the crucible.
7. a kind of crystalline material melting unit according to claim 4, it is characterised in that：The heater and the crucible
It is coaxial to extend.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810606969.1A CN108754613A (en) | 2018-06-13 | 2018-06-13 | A kind of crystalline material melting method and melting unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810606969.1A CN108754613A (en) | 2018-06-13 | 2018-06-13 | A kind of crystalline material melting method and melting unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108754613A true CN108754613A (en) | 2018-11-06 |
Family
ID=64022395
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810606969.1A Pending CN108754613A (en) | 2018-06-13 | 2018-06-13 | A kind of crystalline material melting method and melting unit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108754613A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1276026A (en) * | 1997-10-16 | 2000-12-06 | Memc电子材料有限公司 | Process for preparing silicon melt from polysilicon charge |
| CN104073871A (en) * | 2013-03-28 | 2014-10-01 | 浙江特锐新能源有限公司 | Method for removing bubbles in sapphire crystal growth melt |
| JP2015048296A (en) * | 2013-09-04 | 2015-03-16 | 株式会社福田結晶技術研究所 | Growth unit and growth method of single crystal |
-
2018
- 2018-06-13 CN CN201810606969.1A patent/CN108754613A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1276026A (en) * | 1997-10-16 | 2000-12-06 | Memc电子材料有限公司 | Process for preparing silicon melt from polysilicon charge |
| CN104073871A (en) * | 2013-03-28 | 2014-10-01 | 浙江特锐新能源有限公司 | Method for removing bubbles in sapphire crystal growth melt |
| JP2015048296A (en) * | 2013-09-04 | 2015-03-16 | 株式会社福田結晶技術研究所 | Growth unit and growth method of single crystal |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181106 |
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| RJ01 | Rejection of invention patent application after publication |