CN108736315A - Vertical cavity surface emitting laser structure and preparation method - Google Patents
Vertical cavity surface emitting laser structure and preparation method Download PDFInfo
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- CN108736315A CN108736315A CN201710240185.7A CN201710240185A CN108736315A CN 108736315 A CN108736315 A CN 108736315A CN 201710240185 A CN201710240185 A CN 201710240185A CN 108736315 A CN108736315 A CN 108736315A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
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- General Physics & Mathematics (AREA)
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- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
A kind of vertical cavity surface emitting laser (VCSEL) structure and preparation method have unique three trench architectures.Pass through the oxidation technology time for reducing integral capacitor in boss (mesa) and positioned at periphery one first irrigation canals and ditches of setting of optical window with shortening oxide layer, and the stair-stepping double-deck boss structure is formed by the way that ladder-like the second recessed irrigation canals and ditches and third irrigation canals and ditches are arranged in boss periphery, the effect of by forming enough big heat dissipation areas, reaching reduction fuel factor and avoiding the disconnected golden phenomenon of metal layer.In addition, controlling mode and limitation electric current by the way that ion implantation area is arranged around optical window, and go out photosphere in formation one on optical window to reach the effect of controlling light extraction.
Description
Technical field
The present invention about a kind of vertical cavity surface emitting laser structure and preparation method, it is espespecially a kind of by three trench architectures come
It reduces integral capacitor and shortens a kind of vertical cavity surface emitting laser structure and preparation method of oxidation technology time.
Background technology
Vertical cavity surface emitting laser (Vertical Cavity Surface Emitting Laser；Abbreviation VCSEL)
It is the one of which for belonging to light emitting laser diode, since its power is relatively low with price, in terms of being mainly used in local area network, and
Advantage with " high speed " Yu " low price ".VCSEL shines and the raw material of inspection light are generally with GaAs (GaAs), indium phosphide
(InP) it based on, usually adopts Organometallic Vapor Phase depositing method (MOCVD) and epitaxy circle is made.Compared with general Quartering shot type laser,
The resonant cavity of VCSEL and photon are not the natural lattice planes of disruption formed by technique in the resonant cavity required minute surface that resonates back and forth,
But it is just formed when modular construction epitaxy is grown up.
General vcsel structure substantially includes light emitting active layer, resonant cavity and Prague with high reflectivity is anti-up and down
Penetrate mirror (Distributed Bragg Reflector；Abbreviation DBR).When photon is convenient for resonant cavity after light emitting active layer generates
It inside vibrates back and forth, laser light can be formed in the surface of VCSEL components when Ruo Daju amounts invert (population inversion).
And VCSEL is easier to be coupled with optical fiber, is not required to additional optical frames due to taking wall emission, laser light presentation coniform
Piece.For the basic structure of known VCSEL, preparation method and make flowing mode, can refer to United States Patent (USP) USPat.No.4,949,350
And the content of USPat.No.5,468,656.
The present invention is improved for the structure of above-mentioned known VCSEL with preparation method, is dropped by unique three trench architectures
Low integral capacitor and shortening oxidation technology time, and electric current to control mode and is limited to the ion implantation area around optical window, and
Photosphere is formed on optical window controls light extraction, and, heat transfer is helped to reduce by the stair-stepping double-deck boss structure
Fuel factor.
Invention content
In view of this, the main purpose of the present invention is to provide a kind of vertical cavity surface emitting laser structure and preparation method, it can
Integral capacitor is reduced, the oxidation technology time is shortened and forms the stair-stepping double-deck boss by unique three trench architectures
Structure is to reduce fuel factor.
Another object of the present invention is to provide a kind of vertical cavity surface emitting laser structure and preparation methods, can pass through optical window week
The ion implantation area enclosed controls mode and limitation electric current, and is formed on optical window and one go out photosphere to control light extraction；Wherein light extraction
Layer can be dielectric material, and material composition can be the mixing body of silica (SiO2), silicon nitride (SiN) or both materials,
Reflectance factor is between 1.5-2.0.
In order to achieve the above object, the present invention provides a kind of vertical cavity surface emitting laser structure, includes：One substrate, one
First mirror layer is located on the substrate, an active layer is located in first mirror layer, one second mirror layer is located on active layer, an oxidation
Layer is located in second mirror layer, a land area, one first irrigation canals and ditches, one second irrigation canals and ditches, a third irrigation canals and ditches, a dielectric material,
One first contact layer and one second contact layer；
Wherein, which is to be located on the substrate and be by least part of first mirror layer, the activation
Layer, second mirror layer and the organized structure of the oxide layer form；A centre in a top surface of the land area has an optical window；
First irrigation canals and ditches are at least part for the outer peripheral edge for being located within the land area and being surrounded on the optical window；First irrigation canals and ditches
It is that second mirror layer, the oxide layer and the active layer are at least run through by the top surface of the land area from top to bottom；Second ditch
Canal is at least part for the outer peripheral edge for being surrounded on the land area and is separated by a spacing with first irrigation canals and ditches, second irrigation canals and ditches
At least to run through second mirror layer and the oxide layer from top to bottom, make a bottom of second irrigation canals and ditches be located at the active layer or
One of both at first mirror layer；The third irrigation canals and ditches are at least part for the outer peripheral edge for being surrounded on the land area and are
From the bottom of second irrigation canals and ditches to lower recess, and the third irrigation canals and ditches are at least to run through first mirror layer from top to bottom, make this
One bottom of three irrigation canals and ditches is to be located at the bases；The dielectric material is at least filled in first irrigation canals and ditches；First contact layer
It is on the top surface of the land area and to be contacted with second mirror layer；Second contact layer is to be located at least in the third irrigation canals and ditches
The bottom and be at least contacted with the substrate.
In a preferred embodiment, which has further included an insulating layer, and it is convex to be covered in this
At least part of one outer surface in taiwan area domain, and the second contact layer is at least part of is exposed to this for first contact layer
Except the insulating layer；First mirror layer is a N-shaped distributed bragg reflector mirror layer (distributed Bragg
reflector；Abbreviation DBR), and second mirror layer is a p-type distributed bragg reflector mirror layer；First mirror layer with this second
The material of mirror layer includes the aluminum gallium arsenide (AlGaAs) of different aluminum mole percentage, also, the oxide layer is in the second mirror layer
It is the aluminium with opposite highest mole percentage；The oxide layer is the inner peripheral by first irrigation canals and ditches towards in the land area
Entreat horizontal extension；The dielectric material is the polymer material of low-dielectric matter；And first contact layer and second contact layer
All it is metal layer.
In a preferred embodiment, which has further included an ion implant layer, and being located at should
In second mirror layer.Ion implant layer segment and oxide layer overlap, and by the relative aperture size of oxide layer and ion implant come
Light modality is controlled, intermediate ion implant belongs to gain waveguide (Gain-guided), and oxidation belongs to refraction waveguide (index
Guided), light modality can be controlled by the mixing application of the two；Also, ion implant in the land area
Layer be between the optical window and first irrigation canals and ditches and be the outer peripheral edge for being surrounded on the optical window at least part；Wherein, this
One contact layer is the upper surface for being contacted with second mirror layer.
In a preferred embodiment, which has further included：One goes out photosphere, is located at the boss
On the optical window of the top surface in region.
In a preferred embodiment, which is the bottom by the third irrigation canals and ditches along the third irrigation canals and ditches and this
The inclined surface that second irrigation canals and ditches respectively have respectively extends upwardly to a upper surface of second mirror layer, makes second contact layer
One top surface is generally to be located at height identical as first contact layer；A plane is formed in the bottom of second irrigation canals and ditches, is made
Second contact layer constitutes a horizontal-extending state in the bottom of second irrigation canals and ditches.
In order to achieve the above object, the present invention provides a kind of preparation method of vertical cavity surface emitting laser structure, including following step
Suddenly：
A laser chip base material is provided, in passing through semiconductor technique from bottom to top sequentially structure on the laser chip base material
At：One substrate, one first mirror layer are located on the substrate, an active layer is located in first mirror layer and the second mirror layer is located at
On active layer；
Using one first light shield and implement one first shielding process program, being formed in the upper surface of second mirror layer has one
One first screen layer of the first predetermined pattern, first predetermined pattern correspond to the pattern of first light shield；
Implement an ion implantation process, ion implant is carried out to the region that second mirror layer is not covered by the first screen layer
To form an ion implant layer, and still apart there is a predetermined altitude in a bottom of the ion implant layer with the active layer；
In the case where not yet removing first screen layer, the technique journey of one secondary shielding of one second light shield and implementation is used
Sequence forms one second screen with one second predetermined pattern in the upper surface of second mirror layer and the top of first photoresist layer
Layer is covered, which corresponds to the pattern of second light shield；
Implement one first etching program, to second mirror layer, the active layer and first mirror layer not by second photoresist layer
The region of covering is etched, to form one first irrigation canals and ditches, and first irrigation canals and ditches be from the upper table of second mirror layer downwards
Through second mirror layer and the active layer, it is to be located at first mirror layer to make a bottom of first irrigation canals and ditches；
Implement an oxidation procedure, to form a horizontal-extending oxidation in second mirror layer through first irrigation canals and ditches
Layer, and the oxide layer is close in being with the ion implant layer in height, or even it is to overlap to have part；
Implement one second etching program, to form one second irrigation canals and ditches in second mirror layer, and second irrigation canals and ditches are certainly
The upper table of second mirror layer at least runs through second mirror layer and the oxide layer downwards, and it is position to make a bottom of second irrigation canals and ditches
One of at the active layer or both at first mirror layer；
Implement a third etching program, to form the third ditch to lower recess at the bottom of second irrigation canals and ditches
Canal, and the third irrigation canals and ditches are at least to run through first mirror layer from top to bottom, it is to be located at the substrate to make a bottom of the third irrigation canals and ditches
Place；
A dielectric material is filled in first irrigation canals and ditches, this dielectric material is polymer, can be Polymide, reflectance factor
For 1.5-1.6.The present invention can reduce the face of the semi-conducting material of high-dielectric coefficient by digging out the first irrigation canals and ditches and filling up polymer
Product, therefore capacitance can be reduced.And the appropriate area on the laser chip base material is respectively formed an insulating layer, one first contact
Layer and one second contact layer；
Wherein, which is the upper table for being located on the top surface of the land area and being contacted with second mirror layer
Face；Second contact layer is to be located at least in the bottom of the third irrigation canals and ditches and be at least contacted with the substrate, and second contact layer
It is to be prolonged upwards along the inclined surface that the third irrigation canals and ditches respectively have respectively with second irrigation canals and ditches by the bottom of the third irrigation canals and ditches
The upper surface for extending to second mirror layer, it is generally positioned at identical with first contact layer to make a top surface of second contact layer
Highly；First contact layer with second contact layer is at least part of is exposed to except the insulating layer；
Wherein, a land area can be defined on the laser chip base material by second irrigation canals and ditches and the third irrigation canals and ditches, it should
Second irrigation canals and ditches are both surrounded at least part of the outer peripheral edge of the land area with the third irrigation canals and ditches；The land area is
On the substrate and it is by least part of first mirror layer, the active layer, second mirror layer and the oxide layer institute
Group structure forms, and the centre in a top surface of the land area has an optical window；First irrigation canals and ditches are to be located at the land area
Within and be surrounded on the optical window outer peripheral edge at least part and be separated by a spacing with second irrigation canals and ditches；First irrigation canals and ditches are
Second mirror layer, the oxide layer and the active layer are at least run through by the top surface of the land area from top to bottom.
Description of the drawings
Fig. 1 is the diagrammatic cross-section of one preferred embodiment of vertical cavity surface emitting laser structure of the present invention；
Fig. 2A is the first stage schematic diagram in the preparation method of the vertical cavity surface emitting laser structure of the present invention；
Fig. 2 B are the embodiment schematic diagram of the pattern of first light shield of the present invention；
Fig. 3 A are the second stage schematic diagram in the preparation method of the vertical cavity surface emitting laser structure of the present invention；
Fig. 3 B are the embodiment schematic diagram of the pattern of second light shield of the present invention；
Fig. 4 is the phase III schematic diagram in the preparation method of the vertical cavity surface emitting laser structure of the present invention；
Fig. 5 is the fourth stage schematic diagram in the preparation method of the vertical cavity surface emitting laser structure of the present invention；
Fig. 6 is the 5th stage schematic diagram in the preparation method of the vertical cavity surface emitting laser structure of the present invention；And
Fig. 7 is the 6th stage schematic diagram in the preparation method of the vertical cavity surface emitting laser structure of the present invention.
Reference sign：10- substrates；The first mirror layer of 21-；22- active layers；The second mirror layer of 23-；231- oxide layers；24-
Ion implant layer；The upper surfaces 240-；25- insulating layers；26- dielectric materials；27- metal layers；The first contact layers of 270-；271,273-
Second contact layer；The top surfaces 2710-；274- goes out photosphere；30- land areas；300- optical windows；The first irrigation canals and ditches of 31-；The second irrigation canals and ditches of 32-；
321, the bottoms 331-；33- third irrigation canals and ditches；51,52- patterns；510,520- center circles region；511- annular sections；The peripheries 521-
Region；5100,5110,5200,5210- shieldings.
Specific implementation mode
The vertical cavity surface emitting laser structure and preparation method of the present invention, is mainly reduced by unique three trench architectures
Integral capacitor shortens the oxidation technology time and forms the stair-stepping double-deck boss structure to reduce fuel factor.Also, pass through
Ion implantation area around optical window controls mode and limitation electric current, and on optical window forms an outflow photosphere to control out
Light.
Refering to Figure 1, the section signal of one preferred embodiment of vertical cavity surface emitting laser structure for the present invention
Figure.
In this present embodiment, vertical cavity surface emitting laser structure of the invention be framework one with GaAs (Gallium
Arsenide；Abbreviation GaAs) or indium phosphide (InP) material based on laser chip base material on, and the base material is from bottom to top sequentially
Include：One substrate 10, one first mirror layer 21 are located on the substrate 10, an active layer 22 (Active Region) is located at should
In first mirror layer 21 and the second mirror layer 23 is located on active layer 22.In being folded with an oxide layer 231 in second mirror layer 23
(Oxide Layer).In this present embodiment, which is a N-shaped distributed bragg reflector mirror layer
(distributed Bragg reflector；Abbreviation DBR) it is referred to as lower mirror layer, and second mirror layer 23 is a p-type
Distributed bragg reflector mirror layer its be referred to as mirror layer.First mirror layer 21 and the material of second mirror layer 23 include
The multilayered structure of the aluminum gallium arsenide (AlGaAs) of different aluminum mole percentage, also, the oxide layer 231 is in the second mirror layer 23
Aluminium with opposite highest mole percentage.Thereby, in oxidation procedure, which can form in oxidation process
The aluminium oxide (Al2O3) of insulation.
The vertical cavity surface emitting laser structure of the present invention also has on the substrate：One land area 30
(Mesa), one first irrigation canals and ditches 31 (Isolation Trench), one second irrigation canals and ditches 32, a third irrigation canals and ditches 33, a dielectric material 26
(Dielectric Material), one first contact layer 270 (Contact Layer), one second contact layer 271-273, one from
Sub- implant layer 24 (Implant Region), an insulating layer 25 (Insolating Layer) and one go out 274 (Power of photosphere
Output Layer)。
The land area 30 is to be located on the substrate 10 and be by least part of first mirror layer 21, the activation
Layer 22, second mirror layer 23 and 231 the organized structure of oxide layer form.A centre in a top surface of the land area 30 has
There is an optical window 300.In this present embodiment, the oxide layer 231 is in that be with the bottom of the ion implant layer 24 in height be is close,
It is to overlap even to have part.
First irrigation canals and ditches 31 are at least the one of the outer peripheral edge for being located within the land area 30 and being surrounded on the optical window 300
Part.First irrigation canals and ditches 31 are at least to run through second mirror layer 23, the oxidation from top to bottom by the top surface of the land area 30
Layer 231 and the active layer 22, it is to be located at the first mirror layer 21 to make the bottom of the first irrigation canals and ditches 31.
Second irrigation canals and ditches 32 be at least part of the outer peripheral edge for the first half for being surrounded on the land area 30 and with this
One irrigation canals and ditches 31 are separated by a spacing.Second irrigation canals and ditches 32 are at least to run through second mirror layer 23 and the oxide layer 231 from top to bottom, are made
One bottom 321 of second irrigation canals and ditches 32 is located at the active layer 22 or one of both at first mirror layer 21.The oxidation
Layer 231 is extended by the central horizontal of inner peripheral towards the land area 30 of the irrigation canals and ditches 31.
The third irrigation canals and ditches 33 are at least part of the outer peripheral edge for the lower half for being surrounded on the land area 30 and are certainly should
The bottom 321 of second irrigation canals and ditches 32 is to lower recess.Also, the third irrigation canals and ditches 33 are at least to run through first mirror layer 21 from top to bottom
(or through the active layer 22 and first mirror layer 21), making a bottom 331 of the third irrigation canals and ditches 33 is located in the substrate 10
At surface.
In this present embodiment, it is preferable which, which is the polymer material of low-dielectric matter, and the dielectric material
26 are at least filled in first irrigation canals and ditches 31, it is possible to provide reduce the work(of the integral capacitor of vertical cavity surface emitting laser structure
Effect.In this present embodiment, this dielectric material 26 is polymer, can be Polymide, reflectance factor 1.5-1.6.The present invention is logical
It crosses and digs out the first irrigation canals and ditches 31 and fill up polymer (dielectric material 26), the area of the semi-conducting material of high-dielectric coefficient can be reduced,
Therefore capacitance can be reduced.First contact layer 270 and second contact layer 271-273 are the parts for belonging to metal layer 27.
First contact layer 270 is the upper surface 240 for being located on the top surface of the land area 30 and being contacted with second mirror layer 23.
Second contact layer 271,272,273 is to be located at least in the bottom 331 of the third irrigation canals and ditches 33 and be at least contacted with the substrate 10.
In this present embodiment, which is the bottom 331 by the third irrigation canals and ditches 33 along the third irrigation canals and ditches
33 extend upwardly to the upper surface 240 of second mirror layer 23 with the inclined surface that second irrigation canals and ditches 32 respectively have respectively, make this
One top surface 2710 of the second contact layer 271,272,273 is generally positioned at similar with the top surface of first contact layer 270
Identical height.Therefore, the first contact layer 270 of the invention and the second contact layer 271,272,273 are not only positioned at substrate 10
The same face and be even more be located at roughly the same height and position, subsequent routing technique can be facilitated.In addition, in second irrigation canals and ditches
One plane is formed on 32 bottom 321, makes second contact layer 271,272,273 in 321 structure of bottom of second irrigation canals and ditches 32
At a horizontal-extending state.Thereby, the stair-stepping double-deck boss structure is not only may be constructed, makes larger lower layer's boss that can add
Big heat dissipation area and reduction fuel factor, meanwhile, the inclined surface gradient of second, third trench architectures 32,33 of two benches recess becomes
Delay and form plane in the bottom 321 of second irrigation canals and ditches 32, the second contact layer 271,272,273 can be allowed to be electroplated, splashed
Disconnected golden phenomenon is not easily caused when plating or evaporated metal layer.
The ion implant layer 24 is to be located in second mirror layer 23 and is positioned at the top of the active layers 22.In this implementation
In example, the bottom of ion implant layer 24 has part to overlap with oxide layer 231, and passes through oxide layer 231 and the phase of ion implant 24
Light modality is controlled to pore size.Wherein, ion implant belongs to gain waveguide (Gain-guided), and oxidation belongs to refraction
Waveguide (index guided) can control light modality by the mixing application of the two.Also, in the land area 30
The ion implant layer 24 be between the optical window 300 and first irrigation canals and ditches 31 and be the outer peripheral edge for being surrounded on the optical window 300
At least part.Wherein, which is the upper surface for being contacted with the ion implant layer 24.The present invention passes through
The ion implantation area 24 being additionally arranged around optical window 300 can be used to control light modality and limitation electric current；In the present embodiment
In, ion implanting processes can plant proton (Proton) or oxonium ion, and depth is between 2-4um.
The insulating layer 25 is at least part for the outer surface for being covered in the land area 30, and first contact layer
270 with second contact layer 271,272,273 is at least part of is exposed to except the insulating layer 25.This goes out photosphere 274
On the optical window 300 of the top surface of the land area 30, it can be used to control light extraction, principle utilizes out photosphere 274
Refractive index, thickness and the optical wavelength of material adjusts out.In this present embodiment, which can be Si3N4、
SiO2、Si3O4, SiN or SiNO etc..In this present embodiment, it can be dielectric material that this, which goes out photosphere 274, and material composition can be
Silica (SiO2), the mixing body of silicon nitride (SiN) or both materials, reflectance factor is between 1.5-2.0.
Fig. 2A to Fig. 7 is please referred to, for a preferred embodiment of the preparation method of the vertical cavity surface emitting laser structure of the present invention
Wherein several stages of schematic diagrames.
As shown in Figure 2 A, it is the first stage schematic diagram in the preparation method of the vertical cavity surface emitting laser structure of the present invention.
The preparation method of the vertical cavity surface emitting laser structure of the present invention, is to provide a laser chip base material, in the laser chip base first
It is from bottom to top sequentially constituted on material：One substrate 10, one first mirror layer 21 are located on the substrate 10, an active layer 22 be located at this
In one mirror layer 21 and the second mirror layer 23 is located on active layer 22.Then, using one first shielding work of one first light shield and implementation
Skill program forms the first screen layer with one first predetermined pattern in a upper surface 240 of second mirror layer 23, this first
Predetermined pattern corresponds to the pattern 51 of first light shield.As shown in Figure 2 B, it is the pattern 51 of first light shield of the invention
Embodiment schematic diagram.A center circle region 510 is contained in the pattern 51 of first light shield and is surrounded on the center circle area
One annular section 511 of the periphery in domain；Wherein, the radius in the center circle region 510 is r1, is enclosed within the annular section 511
Radius is r2 and the radius of the periphery of the annular section 511 is r3.The center circle region 510 of first mask pattern 51 is fixed
Justice can be by the position of the optical window 300 of 5100 covering of shielding in the upper surface of second mirror layer 23 240, and the first light shield figure
The annular section 511 of case 51 define the upper surface of second mirror layer 23 240 can by shielding 5110 covering and will not be by ion
The region of implant.The first screen layer includes the shielding 5100,5110.Then, as shown in Figure 2 A, implement an ion implant
Program, the region to second mirror layer 23 not by first screen layer (the shielding 5100,5110) covering carry out ion implant with shape
At an ion implant layer 24, and still apart there is a predetermined altitude in a bottom of the ion implant layer 24 with the active layer 22.Yu Ben
In embodiment, the bottom of ion implant effective district can be overlapped with some and oxide layer position.The present invention passes through in optical window 300
The ion implantation area 24 that surrounding is additionally arranged can be used to control mode and limitation electric current.
As shown in Figure 3A, it is the second stage schematic diagram in the preparation method of the vertical cavity surface emitting laser structure of the present invention.
In the case where not yet removing first screen layer 5100,5110, using one second light shield and implement a secondary shielding process,
Being formed in the upper surface 240 of second mirror layer 23 and the top of the first screen layer 5100,5110 has one second predetermined figure
One secondary shielding layer of case, second predetermined pattern correspond to the pattern 52 of second light shield.As shown in Figure 3B, it is the present invention
Second light shield pattern 52 embodiment schematic diagram.A center circle region is contained in the pattern 52 of second light shield
520 and be surrounded on the center circle region periphery a peripheral region 521；Wherein, the radius in the center circle region 520 is
R1, the radius enclosed within the peripheral region 521 are R2.The center circle region 520 of second mask pattern 52 and the external zones
Domain 521 defines the position that can be covered by shielding 5200,5210 in the upper surface of second mirror layer 23 240, and not by the shielding
5200, the region of 5210 coverings is exactly that can be etched the position for generating the first irrigation canals and ditches 31 later.The secondary shielding layer i.e. include
The shielding 5200,5210.
In this present embodiment, the value of the radius R1 in the center circle region 520 of second mask pattern 52 be between this
It is enclosed in the annular section 511 of one mask pattern 51 between radius r2 and the radius r3 of periphery, also that is, r2<R1<r3；Also,
The value of the radius R2 enclosed within the peripheral region 521 of second mask pattern 52 is greater than the ring of first mask pattern 51
The radius r3 of the periphery in shape region 511, also that is, r3<R2.Therefore, in the twice screen for carrying out aforementioned first shielding and secondary shielding
When covering process, there can be self-aligned, make obtained 231 aperture of oxide layer of subsequent technique and ion implant layer
24 aperture alignment precisions increase.
Then, as shown in figure 4, for the phase III signal in the preparation method of the vertical cavity surface emitting laser structure of the present invention
Figure.Implement one first etching program, to second mirror layer 23, the active layer 22 and first mirror layer 21 not by the secondary shielding layer
The region of (shielding 5200,5210) covering is etched, to form one first irrigation canals and ditches 31, and first irrigation canals and ditches 31 be from this second
The upper surface 240 of mirror layer 23 makes a bottom of first irrigation canals and ditches 31 be downward through second mirror layer 23 and the active layer 22
Positioned at first mirror layer 21.
Then, as shown in figure 5, for the fourth stage signal in the preparation method of the vertical cavity surface emitting laser structure of the present invention
Figure.Implement an oxidation procedure, to form a horizontal-extending oxidation through first irrigation canals and ditches 31 and in second mirror layer 23
Layer 231, and the oxide layer 231 is close in being with ion implant layer 24 in height, it might even be possible to there is part overlapping, also,
The oxide layer 231 is position on active layer 22.Compared to known techniques because not having the structure of the first irrigation canals and ditches 31 so must be thoroughly
It crosses for known techniques of second irrigation canals and ditches 32 to carry out the oxidation procedure of oxide layer, oxidation of the present invention due to the oxide layer 231
Program be through comparatively carrying out closer to first irrigation canals and ditches 31 of optical window 300, so, the distance of required oxidation is relatively
Therefore time short, needed for oxidation procedure also shortens, also reduction oxide layer 231 is grown the stress build up stretched of spreading out because of oxidation distance and asked
Topic.
Then, as shown in fig. 6, for the 5th stage signal in the preparation method of the vertical cavity surface emitting laser structure of the present invention
Figure.Implement one second etching program, to form one second irrigation canals and ditches 32 in second mirror layer 23, and second irrigation canals and ditches 32 are certainly
Second mirror layer 23 and the oxide layer 231 are at least run through downwards in the upper surface 240 of second mirror layer 23, make second irrigation canals and ditches 32
A bottom 321 be located at the active layer 22 at or first mirror layer 21 at both one of them.Also, with a coat of metal journey
A presumptive area of the sequence in the upper surface 240 of second mirror layer 23 forms an engagement pad can namely become the first contact later
A part for layer 270.
Then, as shown in fig. 7, for the 6th stage signal in the preparation method of the vertical cavity surface emitting laser structure of the present invention
Figure.Implement a third etching program, to form the third irrigation canals and ditches to lower recess at the bottom 321 of second irrigation canals and ditches 32
33, and the third irrigation canals and ditches 33 are at least to run through first mirror layer 21 from top to bottom (or to run through the active layer 22 and first mirror
21), make a bottom 331 of the third irrigation canals and ditches 33 is located at the substrate 10 to layer.
And then a dielectric material 26 is filled in first irrigation canals and ditches 31, it is possible to provide reduce vertical cavity surface emitting laser
The effect of integral capacitor of structure；And the appropriate area on the laser chip base material is respectively formed one and goes out photosphere 274, one
Insulating layer 25, a metal layer 27 (including the first contact layer 270 and second contact layer 271,272,273).Thereby, it just can make
Go out the vertical cavity surface emitting laser structure of the present invention as shown in Figure 1.
It in this present embodiment, as shown in Figure 1, can be in the laser chip base material by second irrigation canals and ditches 32 and the third irrigation canals and ditches 33
On define a land area 30, second irrigation canals and ditches 32 and the third irrigation canals and ditches 33 are both surrounded on the land area 300
At least part of outer peripheral edge.The land area 300 is to be located on the substrate 10 and be by least part of first mirror
Layer 21, the active layer 22, second mirror layer 23 and 231 the organized structure of oxide layer form.In a top surface of the land area 300
A centre have an optical window 300.First irrigation canals and ditches 31 are to be located within the land area 30 and be surrounded on the optical window 300
Outer peripheral edge at least part and be separated by a spacing with second irrigation canals and ditches 32.First irrigation canals and ditches 31 are by the land area 30
Top surface at least run through second mirror layer 23, the oxide layer 231 and the active layer 22 from top to bottom.
In this present embodiment, this, which goes out photosphere 274, can be used on the optical window 300 of the top surface of the land area 30
To control light extraction.The ion implant layer 24 is to be located in second mirror layer 23 and is positioned at the top of the oxide layer 231 but ion
24 bottom of implant layer can overlap with 231 part of oxide layer, also, the ion implant layer 24 in the land area 30
Be between the optical window 300 and first irrigation canals and ditches 31 and be the outer peripheral edge for being surrounded on the optical window 300 at least part, can
For controlling mode and limitation electric current.
In this present embodiment, first contact layer 270 be on the top surface of the land area 30 and be contacted with this
The upper surface of two mirror layer 23.Second contact layer 271,272,273 is the bottom 331 and extremely for being located at least in the third irrigation canals and ditches 33
Be contacted with the substrate 10 less, and second contact layer 271,272,273 be by the third irrigation canals and ditches 33 the bottom 331 along this
Three irrigation canals and ditches 33 extend upwardly to the upper surface of second mirror layer 23 with the inclined surface that second irrigation canals and ditches 32 respectively have respectively,
It is generally to be located at first contact layer 270 almost identical height to make a top surface of second contact layer 271,272,273
Degree.Therefore, the first contact layer 270 of the invention and the second contact layer 271,272,273 be not only positioned at substrate 10 the same face,
And be even more to be located at roughly the same height and position, subsequent routing technique can be facilitated.First contact layer 270 second connects with this
Contact layer 271,272,273 is at least part of to be exposed to except the insulating layer 25.Wherein, in the bottom of second irrigation canals and ditches 32
321 form a plane, so that second contact layer 271,272,273 is constituted a level in the bottom 321 of second irrigation canals and ditches 32 and prolong
The state stretched.Thereby, the stair-stepping double-deck boss structure is not only may be constructed, makes larger lower layer's boss that can increase heat dissipation area
And reduce fuel factor, meanwhile, the inclined surface gradient of second, third trench architectures 32,33 of two benches recess slow down and this
Plane is formed on the bottoms 321 of two irrigation canals and ditches 32, can allow the second contact layer 271,272,273 be electroplated, sputter or gold evaporation
Disconnected golden phenomenon is not easily caused when belonging to layer.
Described above to be merely exemplary for the purpose of the present invention, and not restrictive, those of ordinary skill in the art understand,
In the case where not departing from spirit and scope defined by claims appended below, many modifications can be made, are changed, or wait
Effect, but fall in protection scope of the present invention.
Claims (10)
1. a kind of vertical cavity surface emitting laser structure, which is characterized in that including：
One substrate；
One first mirror layer is located on the substrate；
One active layer is located in first mirror layer；
One second mirror layer is located on active layer；
One oxide layer is located in second mirror layer；
One land area on the substrate and is by least part of first mirror layer, the active layer, second mirror
Layer and the organized structure of the oxide layer form, and the centre in a top surface of the land area has an optical window；
One first irrigation canals and ditches, within the land area and be surrounded on the optical window outer peripheral edge at least part；First ditch
Canal is at least to run through second mirror layer, the oxide layer and the active layer from top to bottom by the top surface of the land area；
One second irrigation canals and ditches are surrounded at least part of the outer peripheral edge of the land area and are separated by a spacing with first irrigation canals and ditches,
Second irrigation canals and ditches are at least to run through second mirror layer and the oxide layer from top to bottom, and it is to be located to be somebody's turn to do to make a bottom of second irrigation canals and ditches
One of at active layer or both at first mirror layer；
One third irrigation canals and ditches, be surrounded at least part of the outer peripheral edge of the land area and be from the bottom of second irrigation canals and ditches to
Lower recess, and the third irrigation canals and ditches are at least to run through first mirror layer from top to bottom, it is to be located to be somebody's turn to do to make a bottom of the third irrigation canals and ditches
Bases；
One dielectric material is at least filled in first irrigation canals and ditches；
One first contact layer on the top surface of the land area and is contacted with second mirror layer；And
One second contact layer is located at least in the bottom of the third irrigation canals and ditches and is at least contacted with the substrate.
2. vertical cavity surface emitting laser structure according to claim 1, it is characterised in that：
The vertical cavity surface emitting laser structure has further included an insulating layer, is covered in an outer surface of the land area at least
A part, and first contact layer with second contact layer is at least part of is exposed to except the insulating layer；
First mirror layer is a N-shaped distributed bragg reflector mirror layer, and second mirror layer is a p-type Distributed Bragg Reflection
Mirror layer；
The material of first mirror layer and second mirror layer includes the aluminum gallium arsenide of different aluminum mole percentage, also, the oxidation
Layer is the aluminium with opposite highest mole percentage in the second mirror layer；
The oxide layer is at least to be extended by the central horizontal of inner peripheral towards the land area of first irrigation canals and ditches；
The dielectric material is the polymer material of low-dielectric matter；And
First contact layer and second contact layer are all metal layers.
3. the vertical cavity surface emitting laser structure according to claim 1, which is characterized in that further included：
One ion implant layer, in second mirror layer and its height is to approach or overlap with the oxide layer, also, it is convex to be located at this
The ion implant layer in taiwan area domain is between the optical window and first irrigation canals and ditches and is the outer peripheral edge for being surrounded on the optical window
At least partially；
Wherein, which is the upper surface for being contacted with second mirror layer.
4. the vertical cavity surface emitting laser structure according to claim 1, which is characterized in that further included：
One goes out photosphere, is located on the optical window of the top surface of the land area.
5. the vertical cavity surface emitting laser structure according to claim 1, it is characterised in that：
Second contact layer is that respectively had respectively along the third irrigation canals and ditches and second irrigation canals and ditches by the bottom of the third irrigation canals and ditches
One inclined surface extends upwardly to a upper surface of second mirror layer, make a top surface of second contact layer generally and be to be located at
The identical height of first contact layer；
A plane is formed in the bottom of second irrigation canals and ditches, second contact layer is made to constitute a water in the bottom of second irrigation canals and ditches
The flat state extended.
6. a kind of preparation method of vertical cavity surface emitting laser structure, which is characterized in that include the following steps：
A laser chip base material is provided, in being from bottom to top sequentially made up of semiconductor technique on the laser chip base material：One
Substrate, one first mirror layer are located on the substrate, an active layer is located in first mirror layer and the second mirror layer is located at active layer
On；
Using one first light shield and implement one first shielding process program, being formed in a upper surface of second mirror layer has one the
One first screen layer of one predetermined pattern, first predetermined pattern correspond to the pattern of first light shield；
Implement an ion implantation process, ion implant is not carried out with shape by the region of first photoresist layer covering to second mirror layer
At an ion implant layer, and still apart there is a predetermined altitude in a bottom of the ion implant layer with the active layer；
In the case where not yet removing first screen layer, using one second light shield and implement a secondary shielding process, at this
The upper surface of second mirror layer and the top of the first screen layer form the secondary shielding layer with one second predetermined pattern, should
Second predetermined pattern corresponds to the pattern of the secondary shielding；
Implement one first etching program, second mirror layer, the active layer and first mirror layer are not covered by the secondary shielding layer
Region be etched, to form one first irrigation canals and ditches, and first irrigation canals and ditches be from the upper surface of second mirror layer downward through
Second mirror layer and the active layer, it is to be located at first mirror layer to make a bottom of first irrigation canals and ditches；
Implement an oxidation procedure, to form a horizontal-extending oxide layer in second mirror layer through first irrigation canals and ditches,
And the oxide layer is in being the bottom that is close or being overlapped in the ion implant layer in height；
Implement one second etching program, to form one second irrigation canals and ditches in second mirror layer, and second irrigation canals and ditches be from this
The upper table of two mirror layer at least runs through second mirror layer and the oxide layer downwards, and it is to be located to be somebody's turn to do to make a bottom of second irrigation canals and ditches
One of at active layer or both at first mirror layer；Also, with a coat of metal program second mirror layer the upper table
One presumptive area in face forms an engagement pad；
Implement a third etching program, to form the third irrigation canals and ditches to lower recess at the bottom of second irrigation canals and ditches, and
The third irrigation canals and ditches are at least to run through first mirror layer from top to bottom, and it is to be located at the bases to make a bottom of the third irrigation canals and ditches；With
And
Fill a dielectric material in first irrigation canals and ditches, and the appropriate area on the laser chip base material is respectively formed one absolutely
Edge layer, one first contact layer and one second contact layer；
Wherein, a land area can be defined on the laser chip base material by second irrigation canals and ditches and the third irrigation canals and ditches, this second
Irrigation canals and ditches are both surrounded at least part of the outer peripheral edge of the land area with the third irrigation canals and ditches；The land area is to be located at
On the substrate and it is by least part of first mirror layer, the active layer, second mirror layer and the organized structure of the oxide layer
It forms, the centre in a top surface of the land area has an optical window；First irrigation canals and ditches be located at the land area within,
And it is surrounded at least part of the outer peripheral edge of the optical window and is separated by a spacing with second irrigation canals and ditches；First irrigation canals and ditches are by this
Second mirror layer, the oxide layer and the active layer are at least run through in the top surface of land area from top to bottom；
Wherein, which is on the top surface of the land area and to be contacted with second mirror layer；Second contact
Layer is to be located at least in the bottom of the third irrigation canals and ditches and be at least contacted with the substrate, and second contact layer is by the third irrigation canals and ditches
The bottom extend upwardly to second mirror layer along the inclined surface that the third irrigation canals and ditches and second irrigation canals and ditches respectively have respectively
The upper surface, it is to be located at height identical as first contact layer to make a top surface of second contact layer generally；This first
Contact layer with second contact layer is at least part of is exposed to except the insulating layer.
7. the preparation method of vertical cavity surface emitting laser structure according to claim 6, it is characterised in that：
First mirror layer is a N-shaped distributed bragg reflector mirror layer, and second mirror layer is a p-type Distributed Bragg Reflection
Mirror layer；
The material of first mirror layer and second mirror layer includes the aluminum gallium arsenide of different aluminum mole percentage, also, the oxidation
Layer is the aluminium with opposite highest mole percentage in the second mirror layer；
The oxide layer is at least to be extended by the central horizontal of inner peripheral towards the land area of first irrigation canals and ditches；
The dielectric material is the polymer material of low-dielectric matter；And
First contact layer and second contact layer are all metal layers.
8. the preparation method of vertical cavity surface emitting laser structure according to claim 6, which is characterized in that the ion implant layer
It is to be located in second mirror layer, also, the ion implant layer in the land area is to be located at the optical window and first ditch
Between canal and be the outer peripheral edge for being surrounded on the optical window at least part.
9. the preparation method of vertical cavity surface emitting laser structure according to claim 6, which is characterized in that further included following
Step：
It forms one and goes out photosphere, be located on the optical window of the top surface of the land area.
10. the preparation method of vertical cavity surface emitting laser structure according to claim 6, which is characterized in that in second ditch
One plane is formed on the bottom of canal, and second contact layer is made to constitute a horizontal-extending state in the bottom of second irrigation canals and ditches.
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