CN108736122B - Combiner, Doherty amplifier and base station - Google Patents

Combiner, Doherty amplifier and base station Download PDF

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CN108736122B
CN108736122B CN201710241181.0A CN201710241181A CN108736122B CN 108736122 B CN108736122 B CN 108736122B CN 201710241181 A CN201710241181 A CN 201710241181A CN 108736122 B CN108736122 B CN 108736122B
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quarter
line
wave line
amplifier
power
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CN108736122A (en
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方杨
伍坚
杨世民
李昕
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Datang Mobile Communications Equipment Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/12—Coupling devices having more than two ports
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/42—Modifications of amplifiers to extend the bandwidth
    • H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04W—WIRELESS COMMUNICATION NETWORKS
    • H04W88/00—Devices specially adapted for wireless communication networks, e.g. terminals, base stations or access point devices
    • H04W88/08—Access point devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

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  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)

Abstract

The embodiment of the invention provides a combiner, a Doherty amplifier and a base station applying the Doherty amplifier, wherein the combiner comprises: a first quarter-wave line, a second quarter-wave line, a third quarter-wave line, a fourth quarter-wave line and a system load resistor; one end of the first quarter-wave line is connected with the output end of the main power amplification branch circuit and the second quarter-wave line, and the other end of the first quarter-wave line is connected with the system load resistor and the fourth quarter-wave line; one end of the third quarter-wave line is connected with the output end of the auxiliary power amplification circuit and the second quarter-wave line, and the other end is connected with the fourth quarter-wave line. Therefore, the Doherty amplifier is applied to a wide frequency band, and the working efficiency of the radio frequency power amplifier is effectively improved.

Description

Combiner, Doherty amplifier and base station
Technical Field
The embodiment of the invention relates to the field of communication, in particular to a combiner, a Doherty amplifier and a base station.
Background
At present, a conventional Doherty power amplifier circuit is shown in fig. 1, where: the main amplifier branch mainly comprises: the circuit comprises a main power amplifier, an input and output matching circuit, a quarter-wavelength impedance transformation circuit and a compensation line 1; the auxiliary power amplification branch mainly comprises: auxiliary power amplifier, input-output matching circuit, compensation line 2 with characteristic impedance of 50 a. The output power combiner consists of a characteristic impedance of
Figure BDA0001269447500000011
Ohmic quarter-wave impedance transformation lines. The input is power split by a bridge, and in order to align the phases of the main and auxiliary power amplifier branches, a compensation line 3 with a characteristic impedance of 50 ohms is usually placed in front of the auxiliary power amplifier branch. Wherein a is defined as the proportional relation between the maximum output capacity of the Main amplifying tube and the maximum output capacity of the Peaking amplifying tube.
For the structure of the traditional Doherty power amplifier, the narrow-band effect between the quarter transmission line and the compensation line limits the effect of impedance transformation and phase compensation in the broadband working range, so that the Doherty power amplifier cannot present ideal output impedance at different output power stages in the whole working frequency band, a series of problems such as power leakage and the like are generated, and the defect is particularly prominent under the condition of high impedance transformation ratio.
Disclosure of Invention
The embodiment of the invention provides a combiner device, which is used for solving the problems that the narrow-band effect in the traditional Doherty amplifier limits the impedance conversion and phase compensation effects in a wide-band working range, so that the Doherty power amplifier cannot present ideal output impedance at different output power stages in the whole working frequency band, and the working efficiency of a radio frequency power amplifier is low.
In order to solve the above problem, the present invention discloses a combining device applied to a Doherty amplifier, wherein the Doherty amplifier includes a main power amplifying branch having a main power amplifier and an auxiliary power amplifying branch having an auxiliary power amplifier, and the combining device includes: a first quarter-wave line, a second quarter-wave line, a third quarter-wave line, a fourth quarter-wave line and a system load resistor; wherein,
one end of the first quarter-wavelength line is connected with the output end of the main power amplification branch and the second quarter-wavelength line, and the other end of the first quarter-wavelength line is connected with the system load resistor and the fourth quarter-wavelength line;
one end of the third quarter-wave line is connected with the output end of the auxiliary power amplification circuit and the second quarter-wave line, and the other end is connected with the fourth quarter-wave line.
In a preferred embodiment of the present invention, the microstrip line width of the second quarter-wave line is infinitesimally small so that an open circuit is formed between the first quarter-wave line and the third quarter-wave line.
In a preferred embodiment of the present invention, the first characteristic impedance corresponding to the first quarter-wave line can be expressed by the formula
Figure BDA0001269447500000021
To obtain a solution, wherein,
Figure BDA0001269447500000022
α is a power factor, RLIs the resistance value of the system load resistance, ZMObtaining the impedance value of the main power amplifier, wherein alpha is obtained according to the power parameter or power back-off quantity of the Doherty amplifier;
the third impedance corresponding to the third quarter-wave line can be expressed by the formula
Figure BDA0001269447500000023
Is obtained by4A fourth impedance corresponding to the fourth quarter-wave line, which may be preset;
second impedance Z corresponding to second quarter-wave line2Can be represented by formula
Figure BDA0001269447500000024
And (6) obtaining.
According to another aspect of the present invention, there is also provided a Doherty amplifier comprising a main power amplifying branch having a main power amplifier and an auxiliary power amplifying branch having an auxiliary power amplifier, wherein the Doherty amplifier further comprises combining means, the combining means comprising: a first quarter-wave line, a second quarter-wave line, a third quarter-wave line, a fourth quarter-wave line and a system load resistor; wherein,
one end of the first quarter-wavelength line is connected with the output end of the main power amplification branch and the second quarter-wavelength line, and the other end of the first quarter-wavelength line is connected with the system load resistor and the fourth quarter-wavelength line;
one end of the third quarter-wave line is connected with the output end of the auxiliary power amplification circuit and the second quarter-wave line, and the other end is connected with the fourth quarter-wave line.
In a preferred embodiment of the present invention, the microstrip line width of the second quarter-wave line is infinitesimally small so that an open circuit is formed between the first quarter-wave line and the third quarter-wave line.
In a preferred embodiment of the present invention, the first characteristic impedance corresponding to the first quarter-wave line can be expressed by the formula
Figure BDA0001269447500000031
To obtain a solution, wherein,
Figure BDA0001269447500000032
α is a power factor, RLIs the resistance value of the system load resistance, ZMObtaining the impedance value of the main power amplifier, wherein alpha is obtained according to the power parameter or power back-off quantity of the Doherty amplifier;
the third impedance corresponding to the third quarter-wave line can be expressed by the formula
Figure BDA0001269447500000033
Is obtained by4A fourth impedance corresponding to the fourth quarter-wave line, which may be preset;
second impedance Z corresponding to second quarter-wave line2Can be represented by formula
Figure BDA0001269447500000034
And (6) obtaining.
In a preferred embodiment of the present invention, further comprising:
and one end of the power distribution module is connected with the input end of the main power amplification branch circuit, and the other end of the power distribution module is connected with the input end of the auxiliary power amplification branch circuit.
In a preferred embodiment of the present invention, the power distribution module is a power divider or a bridge, and is configured to implement different power inputs of the main power amplification branch and the auxiliary power amplification branch.
In a preferred embodiment of the present invention, the main power amplifier is a GaN amplifier and the auxiliary power amplifier is a GaN amplifier.
According to another aspect of the present invention, there is also provided a base station, which includes the Doherty amplifier in any one of the above embodiments.
Compared with the prior art, the Doherty amplifier has the advantages that the Doherty amplifier is provided with the combiner with the four quarter-wavelength lines and the system load resistor, so that the Doherty amplifier is applied to a wide frequency band, and the working efficiency of the radio frequency power amplifier is effectively improved.
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In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive labor.
FIG. 1 is a schematic diagram of a prior art Doherty amplifier arrangement;
fig. 2 is a schematic structural diagram of a combining device according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a Doherty amplifier according to an embodiment of the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Referring to fig. 2, a combining apparatus according to an embodiment of the present invention is shown, and is applied to a Doherty amplifier, where the Doherty amplifier includes a main power amplifying branch having a main power amplifier and an auxiliary power amplifying branch having an auxiliary power amplifier, and as shown in fig. 2, the combining apparatus specifically includes:
a first quarter wavelength line 210, a second quarter wavelength line 220, a third quarter wavelength line 230, a fourth quarter wavelength line 240, and a system load resistor 250; wherein,
one end of the first quarter-wavelength line 210 is connected to the output end of the main power amplification branch and the second quarter-wavelength line 220, and the other end is connected to the system load resistor 250 and the fourth quarter-wavelength line 40;
one end of the third quarter-wave line 230 is connected to the output end of the auxiliary power amplifying circuit and the second quarter-wave line 220, and the other end is connected to the fourth quarter-wave line 240.
In summary, in the technical solution of the embodiment of the present invention, the Doherty amplifier is provided with the combiner having four quarter-wavelength lines and a system load resistor, so that the Doherty amplifier is applied to a wide frequency band, and the working efficiency of the radio frequency power amplifier is effectively improved.
Further, in a preferred embodiment of the present invention, the microstrip line width of the second quarter-wave line is infinitesimally small so that an open circuit is formed between the first quarter-wave line and the third quarter-wave line.
In a preferred embodiment of the present invention, the first characteristic impedance corresponding to the first quarter-wave line can be expressed by the formula
Figure BDA0001269447500000051
To obtain a solution, wherein,
Figure BDA0001269447500000052
α is a power factor, RLIs the resistance value of the system load resistance, ZMObtaining the impedance value of the main power amplifier, wherein alpha is obtained according to the power parameter or power back-off quantity of the Doherty amplifier;
the third impedance corresponding to the third quarter-wave line can be expressed by the formula
Figure BDA0001269447500000053
Is obtained by4A fourth impedance corresponding to the fourth quarter-wave line, which may be preset;
second impedance Z corresponding to second quarter-wave line2Can be represented by formula
Figure BDA0001269447500000054
And (6) obtaining.
In order to make those skilled in the art better understand the combining device and the Doherty amplifier using the combining device of the present invention, the following detailed description is made with specific embodiments.
Referring to fig. 3, a Doherty amplifier of an embodiment of the invention is shown. In fig. 3:
the Doherty amplifier specifically comprises:
main power amplification branch 310 and auxiliary power amplification branch 320.
Wherein,
the main power amplification branch mainly comprises: an input matching circuit 311, a main power amplifier 312, an output matching circuit 313, and a compensation line 314 having a characteristic impedance of 50 Ω.
The auxiliary power amplification branch mainly comprises: a compensation line 321 with a characteristic impedance of 50 Ω, an input matching circuit 322, an auxiliary power amplifier 323, an output matching circuit 324, and a compensation line 325 with a characteristic impedance of 50 × a. Where a is defined as the ratio of the maximum output capacity of the main power amplifier to the maximum output capacity of the auxiliary power amplifier, and a specific formula will be given in the following embodiments.
With continued reference to fig. 3, the Doherty amplifier further comprises: and a combining module 330.
Specifically, in the embodiment of the present invention, the combining module 330 may specifically include:
a first quarter-wave line 331, a second quarter-wave line 332, a third quarter-wave line 333, a fourth quarter-wave line 334, and a system load resistor 335; wherein,
one end of the first quarter-wavelength line 331 is connected to the output end of the main power amplifying branch 310 and the second quarter-wavelength line 332, and the other end is connected to the system load resistor 335 and the fourth quarter-wavelength line 334;
one end of the third quarter-wave line 333 is connected to the output end of the auxiliary power amplifying circuit 320 and the second quarter-wave line 332, and the other end is connected to the fourth quarter-wave line 334.
Specifically, in the embodiment of the present invention, the characteristic impedance corresponding to the first quarter-wave line 331 is set to ZAThe characteristic impedance corresponding to the second quarter-wave line 332 is ZBThe characteristic impedance corresponding to the third quarter-wave line 333 is ZCThe fourth quarter-wave line 334 has a characteristic impedance ZD。ZiThe process of (i ═ a, B, C, D) is as follows:
for each segment of the quarter-wave line, it can be labeled by a two-port network, and its matrix is:
Figure BDA0001269447500000061
wherein, V1、I1Voltage and current, V, respectively, at the input2、I2Respectively, the voltage and current at the output.
For the center frequency f0Defining the integral average power of the power amplifier as PavgPeak power of Ppeak；PM_maxIs the main power amplifier peak power, Pp_maxIs the auxiliary power amplifier peak power;
Ppeak＝Pp_max+PM_max (2)
OBO is the power back-off, alpha is the power factor, for a Doherty power amplifier,
Figure BDA0001269447500000062
specifically, in the embodiment of the present invention, the value of α can be obtained by any equation on the right side of the equation. That is, α can be obtained from the power parameter or power back-off of the Doherty amplifier. In one embodiment of the invention, if the OBO of the Doherty amplifier is obtained, the value of α can be calculated by the OBO. In another embodiment of the present invention, if the power parameter is obtained, α can be calculated according to the above equation.
PavgIs the first peak efficiency (i.e., the first maximum point of the Doherty amplifier power), and this point-to-point efficiency can be expressed as η1；PpeakIs the second peak efficiency (i.e., the second maximum point of power), and the corresponding efficiency can be expressed as η2。
Figure BDA0001269447500000071
Figure BDA0001269447500000072
Wherein,
Figure BDA0001269447500000073
the current value corresponding to the main power amplifier at the first point of maximum efficiency,
Figure BDA0001269447500000074
and
Figure BDA0001269447500000075
the current values corresponding to the main power and the auxiliary power amplifier at the second maximum efficiency point, respectively.
According to the matrix expression, IMCan be represented by RLAnd four quarter-wave lines (Z)A，ZB，ZC，ZD) Expressing:
Figure BDA0001269447500000076
Figure BDA0001269447500000077
for convenience of expression, define
Figure BDA0001269447500000078
The equation can be simplified to:
Figure BDA0001269447500000079
Figure BDA0001269447500000081
ZM(i.e., the impedance of the main power amplifier in embodiments of the invention) the impedance at peak power is:
Figure BDA0001269447500000082
beta is ready to pass through ZMExpressing:
Figure BDA0001269447500000083
at the same time, ZP(i.e., the impedance of the auxiliary power amplifier in embodiments of the invention) the impedance at peak power may also be represented by ZMExpressing:
ZP＝ZM*a (13)
wherein,
Figure BDA0001269447500000084
to simplify the design, Z can be flexibly adjustedBIf infinity is taken, i.e., the microstrip line width is infinitesimal, the space between the first quarter-wave line 331 and the third quarter-wave line 333 can be regarded as an open circuit.
In summary, the simplified expression of each parameter is:
Figure BDA0001269447500000085
Figure BDA0001269447500000091
wherein Z isMUsually taking the value 50 Ω, RLAgain taking the value of 50 omega.
Second impedance Z corresponding to second quarter-wave line 332BCan be represented by formula
Figure BDA0001269447500000092
And (6) obtaining.
In the embodiment of the present invention, the calculated Zi needs to minimize the device volume under the condition that the frequency range is satisfied, and therefore, if the calculated Zi cannot satisfy the above condition, the calculation of Zi needs to be performed again, that is, the power parameter or OBO is acquired again to calculate α again, and the corresponding Zi is calculated until the above condition is satisfied.
Still referring to fig. 3, in an embodiment of the present invention, the Doherty amplifier may further include a power splitting module 340. The power distribution module 340 has one end connected to the input end of the main power amplification branch 310, and the other end connected to the input end of the auxiliary power amplification branch 320. The power distribution module is a power divider or an electric bridge and is used for realizing different power inputs of the main power amplification branch and the auxiliary power amplification branch. Therefore, the problem that the main power amplifier enters a deep saturation state due to the fact that the auxiliary power amplifier with the non-ideal modulation effect is started too late is solved.
In one embodiment of the invention, the main power amplifier is a GaN amplifier and the auxiliary power amplifier is a GaN amplifier. Compared with an LDMOS (laterally diffused metal oxide semiconductor) tube, the GaN device has a series of advantages of high breakdown voltage, small parasitic parameters, low impedance Q value, high power density and the like, and the performance of the power amplifier in the aspects of bandwidth, efficiency and the like can be greatly improved.
In summary, in the technical solution of the embodiment of the present invention, the Doherty amplifier is provided with the combiner having four quarter-wavelength lines and a system load resistor, so that the Doherty amplifier is applied to a wide frequency band, and the working efficiency of the radio frequency power amplifier is effectively improved.
In an embodiment of the present invention, a Doherty amplifier is disclosed, which includes a main power amplifying branch having a main power amplifier and an auxiliary power amplifying branch having an auxiliary power amplifier, and is characterized in that the Doherty amplifier further includes a combining device, and the combining device includes: a first quarter-wave line, a second quarter-wave line, a third quarter-wave line, a fourth quarter-wave line and a system load resistor; wherein,
one end of the first quarter-wavelength line is connected with the output end of the main power amplification branch and the second quarter-wavelength line, and the other end of the first quarter-wavelength line is connected with the system load resistor and the fourth quarter-wavelength line;
one end of the third quarter-wave line is connected with the output end of the auxiliary power amplification circuit and the second quarter-wave line, and the other end is connected with the fourth quarter-wave line.
In a preferred embodiment of the present invention, the microstrip line width of the second quarter-wave line is infinitesimally small so that an open circuit is formed between the first quarter-wave line and the third quarter-wave line.
In a preferred embodiment of the present invention, the first characteristic impedance corresponding to the first quarter-wave line can be expressed by the formula
Figure BDA0001269447500000101
To obtain a solution, wherein,
Figure BDA0001269447500000102
α is a power factor, RLIs the resistance value of the system load resistance, ZMObtaining the impedance value of the main power amplifier, wherein alpha is obtained according to the power parameter or power back-off quantity of the Doherty amplifier;
the third impedance corresponding to the third quarter-wave line can be expressed by the formula
Figure BDA0001269447500000103
Is obtained by4A fourth impedance corresponding to the fourth quarter-wave line, which may be preset;
second impedance Z corresponding to second quarter-wave line2Can be represented by formula
Figure BDA0001269447500000104
And (6) obtaining.
In a preferred embodiment of the present invention, further comprising:
and one end of the power distribution module is connected with the input end of the main power amplification branch circuit, and the other end of the power distribution module is connected with the input end of the auxiliary power amplification branch circuit.
In a preferred embodiment of the present invention, the power distribution module is a power divider or a bridge, and is configured to implement different power inputs of the main power amplification branch and the auxiliary power amplification branch.
In a preferred embodiment of the present invention, the main power amplifier is a GaN amplifier and the auxiliary power amplifier is a GaN amplifier.
In an embodiment of the present invention, a base station is further disclosed, and the base station includes the Doherty amplifier in any of the above embodiments.
The embodiments in the present specification are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The combiner, the Doherty amplifier and the base station using the Doherty amplifier provided by the invention are introduced in detail, and a specific example is applied in the description to explain the principle and the implementation mode of the invention, and the description of the embodiment is only used for helping to understand the method and the core idea of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.

Claims (8)

1. A combiner apparatus applied to a Doherty amplifier, wherein the Doherty amplifier includes a main power amplifying branch having a main power amplifier and an auxiliary power amplifying branch having an auxiliary power amplifier, and the combiner apparatus includes: a first quarter-wave line, a second quarter-wave line, a third quarter-wave line, a fourth quarter-wave line and a system load resistor; wherein,
one end of the first quarter-wavelength line is connected with the output end of the main power amplification branch and one end of the second quarter-wavelength line, and the other end of the first quarter-wavelength line is connected with the system load resistor and one end of the fourth quarter-wavelength line;
one end of the third quarter-wavelength line is connected with the output end of the auxiliary power amplification branch and the other end of the second quarter-wavelength line, and the other end of the third quarter-wavelength line is connected with the other end of the fourth quarter-wavelength line;
wherein the first characteristic impedance corresponding to the first quarter-wave line is represented by the formula Z1＝
Figure RE-FDA0002690631550000011
The result is obtained by the calculation of the total weight of the product,
Figure RE-FDA0002690631550000012
α is a power factor, RLIs the resistance value of the system load resistance, ZMObtaining an impedance value of the main power amplifier, wherein the alpha is obtained according to a power parameter or a power back-off of the Doherty amplifier;
the third impedance corresponding to the third quarter-wave line is expressed by the formula
Figure RE-FDA0002690631550000013
Is obtained by4A fourth impedance corresponding to the fourth quarter-wave line, the fourth impedance being preset;
a second impedance Z corresponding to the second quarter-wave line2By the formula
Figure RE-FDA0002690631550000014
And (6) obtaining.
2. The combining device of claim 1, wherein the microstrip line width of the second quarter-wave line is infinitesimally small to form an open circuit between the first quarter-wave line and the third quarter-wave line.
3. A Doherty amplifier comprising a main power amplifying branch having a main power amplifier and an auxiliary power amplifying branch having an auxiliary power amplifier, wherein the Doherty amplifier further comprises combining means, the combining means comprising: a first quarter-wave line, a second quarter-wave line, a third quarter-wave line, a fourth quarter-wave line and a system load resistor; wherein,
one end of the first quarter-wavelength line is connected with the output end of the main power amplification branch circuit and the second quarter-wavelength line, and the other end of the first quarter-wavelength line is connected with the system load resistor and the fourth quarter-wavelength line;
one end of the third quarter-wavelength line is connected with the output end of the auxiliary power amplification circuit and the second quarter-wavelength line, and the other end of the third quarter-wavelength line is connected with the fourth quarter-wavelength line;
wherein the first characteristic impedance corresponding to the first quarter-wave line is represented by the formula
Figure RE-FDA0002690631550000021
To obtain a solution, wherein,
Figure RE-FDA0002690631550000022
α is a power factor, RLIs the resistance value of the system load resistance, ZMObtaining an impedance value of the main power amplifier, wherein the alpha is obtained according to a power parameter or a power back-off of the Doherty amplifier;
the third impedance corresponding to the third quarter-wave line is expressed by the formula
Figure RE-FDA0002690631550000023
Is obtained by4A fourth impedance corresponding to the fourth quarter-wave line, the fourth impedance being preset;
a second impedance Z corresponding to the second quarter-wave line2By the formula
Figure RE-FDA0002690631550000024
And (6) obtaining.
4. The amplifier of claim 3, wherein the microstrip line width of the second quarter-wave line is infinitesimally small to form an open circuit between the first quarter-wave line and the third quarter-wave line.
5. The amplifier of claim 3, further comprising:
and one end of the power distribution module is connected with the input end of the main power amplification branch circuit, and the other end of the power distribution module is connected with the input end of the auxiliary power amplification branch circuit.
6. The amplifier of claim 5, wherein the power distribution module is a power divider or a bridge for realizing different power inputs of the main power amplification branch and the auxiliary power amplification branch.
7. The amplifier of claim 3, wherein the main power amplifier is a GaN amplifier and the auxiliary power amplifier is a GaN amplifier.
8. A base station comprising a Doherty amplifier as claimed in any one of claims 3 to 7.
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New Output Combiner for Doherty Amplifiers;Rocco Giofrè等;《IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS》;20130131;31-33页 *

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