CN108735806B - Structure and method for generating spin current with controllable polarizability - Google Patents
Structure and method for generating spin current with controllable polarizability Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 18
- 239000002184 metal Substances 0.000 claims abstract description 48
- 229910052751 metal Inorganic materials 0.000 claims abstract description 48
- 239000000463 material Substances 0.000 claims abstract description 42
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 39
- 150000004770 chalcogenides Chemical class 0.000 claims abstract description 27
- 230000031700 light absorption Effects 0.000 claims abstract description 14
- 239000007769 metal material Substances 0.000 claims abstract description 10
- 230000007704 transition Effects 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 230000000737 periodic effect Effects 0.000 claims description 31
- 239000002086 nanomaterial Substances 0.000 claims description 10
- 229910005543 GaSe Inorganic materials 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910000531 Co alloy Inorganic materials 0.000 claims description 2
- 229910000640 Fe alloy Inorganic materials 0.000 claims description 2
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 2
- 230000010287 polarization Effects 0.000 abstract description 5
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 25
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 8
- 230000005291 magnetic effect Effects 0.000 description 6
- 230000033228 biological regulation Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000002207 thermal evaporation Methods 0.000 description 4
- 238000001748 luminescence spectrum Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000001808 coupling effect Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005090 crystal field Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66984—Devices using spin polarized carriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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Abstract
The invention provides a structure for generating spin current with controllable polarizability, which is characterized in that an enhanced light absorption layer with a plasmon metal material, a III-VI family chalcogenide two-dimensional material, a ferromagnetic metal layer with a ferromagnetic metal cluster, a channel electrode and a BN two-dimensional material protection layer are sequentially arranged on a substrate; adopting laser to vertically irradiate into the structure, enhancing the light absorption efficiency through a plasmon metal material on the surface of the III-VI family chalcogenide two-dimensional material, exciting the transition of spin polarized electrons injected into the III-VI family chalcogenide two-dimensional material by the ferromagnetic metal layer, and generating spin current through a channel loop connected with the III-VI family chalcogenide two-dimensional material; and the polarization rate of the spin current can be controlled by controlling the morphology and the scale of the ferromagnetic metal cluster.
Description
Technical Field
The invention relates to a structure and a method for generating spin current, in particular to a structure and a method for realizing spin current with controllable polarizability by regulating and controlling electron spin polarization of III-VI family chalcogenide two-dimensional material by utilizing ferromagnetic metal.
Background
The generation and regulation of spin-polarized current is critical to practical applications of spintronics. Spin-polarized current generation in semiconductors is roughly divided into two methods: (1) a polarized light injection method is utilized. A semiconductor is irradiated with a circularly polarized light beam to excite electrons from a valence band to a conduction band, and electrons having different spin orientations are made to transition with different probabilities by a transition selection rule between a hole and an electron, thereby forming spin-polarized electrons on the conduction band. (2) A lateral non-local geometry implantation method is adopted. Carriers that have been spin-polarized are injected into a semiconductor material from a material such as a ferromagnetic metal, magnetic semiconductor, or semimetal by interfacial contact with the semiconductor material. In contrast, the second method is more advantageous for integration and compatibility of the semiconductor device. For spin injection, conventional ferromagnetic materials, such as fe, co, and ni, have the advantages of high electron spin polarizability, high curie temperature, and easy preparation, and become a convenient choice for spin injection. However, when the ferromagnetic metal is in direct contact with the semiconductor, the impedance mismatch will cause spin flip scattering, resulting in a severe loss of spin polarization, thereby greatly reducing its room temperature spin polarizability. Therefore, it is a key problem to generate spin-polarized current to improve the polarizability of spin injection and to achieve effective regulation thereof.
The solid material system of III-VI family chalcogenide two-dimensional materials (such as gallium selenide and GaSe) has longer spin relaxation time and is greatly beneficial to the generation and the transportation of spin polarized current because the degeneracy of orbital electronic states is eliminated due to the anisotropy of crystal fields and the spin-orbit coupling effect, the spin relaxation is strongly inhibited, and the spin scattering is greatly reduced. Meanwhile, ferromagnetic metal is used for surface modification of the III-VI group two-dimensional film material in a cluster form, the metal energy band structure of the ferromagnetic metal is changed by virtue of the size effect, the problem of mismatch of the conductivity of the metal and a semiconductor is solved, the shape and the size of the ferromagnetic metal obviously influence the internal magnetic moment direction of the cluster, and the spin electric susceptibility of injected electrons is regulated and controlled in an interface coupling mode, so that an effective scheme is provided for generation and control of a spin polarized current source.
Disclosure of Invention
In view of the design requirements of a spin current source and the problem of regulation and control of the spin polarizability of the spin current source, the invention provides a structure and a method for generating spin polarized carriers with controllable polarizability based on laser excitation of a III-VI family chalcogenide two-dimensional material and a ferromagnetic metal cluster heterostructure, and aims to realize room-temperature spin current and regulation and control of the polarizability of the room-temperature spin current.
In order to solve the technical problem, the invention provides a structure for generating spin current with controllable polarizability, which comprises an enhanced light absorption layer, a III-VI chalcogenide two-dimensional material, a ferromagnetic metal layer, a channel electrode and a BN two-dimensional material protection layer, wherein the enhanced light absorption layer, the III-VI chalcogenide two-dimensional material, the ferromagnetic metal layer, the channel electrode and the BN two-dimensional material protection layer are arranged on a substrate; the ferromagnetic metal layer is composed of ferromagnetic metal clusters with a granular non-periodic cluster structure or a periodic cluster array structure;
the enhanced light absorption layer, the III-VI family chalcogenide two-dimensional material, the ferromagnetic metal layer and the BN two-dimensional material protection layer are sequentially stacked from bottom to top, and the channel electrode and the ferromagnetic metal layer are located on the same layer and located on two sides of the ferromagnetic metal layer.
In a preferred embodiment: the enhanced light absorption layer is made of a plasmon metallic material, and the structure of the plasmon metallic material is one of a granular non-periodic nano structure or a periodic nano array structure.
In a preferred embodiment: the individual size of the particles of the granular non-periodic nano structure and the particle spacing dimension of the granular non-periodic nano structure are both within the range of 30-600 nm.
In a preferred embodiment: the periodic unit structure of the periodic nano array structure and the periodic scale of the periodic nano array structure are both within the range of 30-600 nm.
In a preferred embodiment: the III-VI chalcogenide two-dimensional material has a thickness d that satisfies the range 0< d <200 nm.
In a preferred embodiment: the lateral dimension of the ferromagnetic metal cluster is 1-4 mu m, the longitudinal height is 1-50 nm, and the cluster morphology is consistent.
In a preferred embodiment: the ferromagnetic metal cluster is made of one or more alloys of iron, cobalt and nickel.
The invention also provides a method of generating a spin current of controllable polarizability using a structure as described above: laser is adopted to be incident into a heterostructure consisting of the III-VI family chalcogenide two-dimensional material and the ferromagnetic metal layer, and the light absorption efficiency is enhanced through the plasmon metal material on the surface of the III-VI family chalcogenide two-dimensional material;
laser exciting a transition of spin-polarized electrons injected by the ferromagnetic metal layer into the group III-VI chalcogenide two-dimensional material, thereby generating a spin current via a channel loop connected with the group III-VI chalcogenide two-dimensional material; the polarizability of the spin current can be regulated and controlled by the morphology and the size of the ferromagnetic metal cluster.
In a preferred embodiment: the radiation wavelength of the laser is 250 nm-580 nm, and the radiation power of the laser is 50 muW-5 mW.
In a preferred embodiment: the range of the generation temperature T of the spin current is more than or equal to 0K and less than or equal to 300K.
Compared with the prior art, the invention provides the method and the structure for simply and effectively generating the spin current with controllable polarizability under the temperature condition that T is more than or equal to 0K and less than or equal to 300K, and under the conditions of magnetic fields or non-magnetic fields, air or vacuum environment.
Drawings
Fig. 1 is a schematic diagram of the principle and structure of embodiment 1 of the present invention.
FIG. 2 is a polarized luminescence spectrum of the structure at 10 seconds of thermal deposition time for Fe.
FIG. 3 is a polarized luminescence spectrum of the structure at a thermal deposition time of 40 seconds for Fe.
Detailed Description
The invention is described in detail below with reference to the following examples and drawings, but the scope of protection of the invention is not limited to the following examples:
the method and the structure for generating the spin current with controllable polarizability are based on the spin polarization carrier transition of laser excitation III-VI family chalcogenide two-dimensional materials and ferromagnetic metal cluster heterostructure to generate the spin current, and the shape and the size of the ferromagnetic metal cluster are controlled to adjust the direction of the magnetic moment inside the ferromagnetic metal cluster and the magnetic coupling effect with the III-VI family chalcogenide two-dimensional materials, so that the polarizability of the spin current is controlled. The ferromagnetic metal cluster structure can be a granular non-periodic cluster structure and can be a periodic cluster array structure; the III-VI chalcogenide two-dimensional material can be one of GaSe, GaS, InSe or InS, and the thickness can be from a monolayer to less than 200 nm; the ferromagnetic metal can be selected from one or more of iron, cobalt and nickel; in order to enhance spin-polarized current, a plasmon metal material can be adopted on the surface of a III-VI chalcogenide two-dimensional material to enhance light absorption efficiency, the structure of the plasmon metal material can be one of a granular non-periodic nano structure or a periodic nano array structure, and the individual size of particles of the granular non-periodic nano structure, the particle spacing of the granular non-periodic nano structure, the periodic unit structure of the periodic nano array structure and the period of the periodic nano array structure can be within the range of 30-600 nm.
Example 1:
as shown in fig. 1, the structure of the present embodiment includes: the light-absorbing layer sequentially comprises a substrate, an Ag enhanced light-absorbing layer, a GaSe two-dimensional material, an Fe cluster metal layer and a BN two-dimensional material protective layer from bottom to top. The channel electrode and the Fe cluster metal layer are positioned on the same layer and positioned on two sides of the Fe cluster metal layer. Wherein the Ag reinforced light absorption layer is formed on SiO by adopting a thermal evaporation method2A granular non-periodic nano structure with 150nm characteristic dimension is prepared on a Si substrate; the GaSe two-dimensional material is prepared on the Ag enhanced light absorption layer by adopting a mechanical stripping and transferring technology and has the thickness of about 20 nm; the Fe cluster metal layer is a granular non-periodic cluster structure which is prepared on the surface of the GaSe two-dimensional material by adopting a thermal evaporation method or a magnetron sputtering method and is composed of Fe metal, the lateral dimension of the cluster can be 1-2 mu m, the longitudinal height can be 4-28 nm, and the cluster morphology is consistent.
The generation of spin current and the control of polarizability may be performed as follows:
1. connecting a channel electrode through a lead wire to form a channel loop with the GaSe two-dimensional material;
2. a green laser with the central wavelength of 532nm and the power of 1mW is selected, and a 532 +/-2 nm optical filter is placed in front of the laser in order to improve the monochromaticity of the laser and ensure the reliability and accuracy of an experiment. The laser after passing through the optical filter is directly and vertically incident on the surface of the heterostructure, and electrons are excited to generate spin current through a channel loop;
and testing the control of the spin current polarizability by a polarized luminescence spectrum testing method. It can be observed that the pure GaSe two-dimensional film has no spin polarization when Fe metal is not deposited; the spin polarizability was about 9% at 10s Fe metal deposition time (as shown in fig. 2); the spin polarizability was about 24% at a Fe metal deposition time of 40s (as shown in fig. 3), thus demonstrating that the generation and control of spin current polarizability can be achieved by precisely controlling the Fe metal cluster size and coverage.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (10)
1. A structure for generating spin currents of controlled polarizability, comprising: arranging an enhanced light absorption layer, a III-VI family chalcogenide two-dimensional material, a ferromagnetic metal layer, a channel electrode and a BN two-dimensional material protection layer on a substrate; the ferromagnetic metal layer is composed of ferromagnetic metal clusters with a granular non-periodic cluster structure or a periodic cluster array structure;
the enhanced light absorption layer, the III-VI family chalcogenide two-dimensional material, the ferromagnetic metal layer and the BN two-dimensional material protection layer are sequentially laminated from bottom to top, and the channel electrode and the ferromagnetic metal layer are positioned on the same layer and positioned on two sides of the ferromagnetic metal layer;
the group III-VI chalcogenide two-dimensional material is GaSe.
2. A structure for generating spin currents of controllable polarizability as claimed in claim 1, wherein: the enhanced light absorption layer is made of a plasmon metallic material, and the structure of the plasmon metallic material is one of a granular non-periodic nano structure or a periodic nano array structure.
3. A structure for generating spin currents of controllable polarizability as claimed in claim 2, wherein: the individual size of the particles of the granular non-periodic nano structure and the particle spacing dimension of the granular non-periodic nano structure are both within the range of 30-600 nm.
4. A structure for generating spin currents of controllable polarizability as claimed in claim 2, wherein: the periodic unit structure of the periodic nano array structure and the periodic scale of the periodic nano array structure are both within the range of 30-600 nm.
5. A structure for generating spin currents of controllable polarizability as claimed in claim 1, wherein: the III-VI chalcogenide two-dimensional material has a thickness d that satisfies the range 0< d <200 nm.
6. A structure for generating spin currents of controllable polarizability as claimed in claim 1, wherein: the lateral dimension of the ferromagnetic metal cluster is 1-4 mu m, the longitudinal height is 1-50 nm, and the cluster morphology is consistent.
7. A structure for generating spin currents of controllable polarizability as claimed in claim 1, wherein: the ferromagnetic metal cluster is made of one or more alloys of iron, cobalt and nickel.
8. A method of generating spin currents of controlled polarizability using the structure of any one of claims 1-7, wherein: laser is adopted to be incident into a heterostructure consisting of the III-VI family chalcogenide two-dimensional material and the ferromagnetic metal layer, and the light absorption efficiency is enhanced through the plasmon metal material on the surface of the III-VI family chalcogenide two-dimensional material;
laser exciting a transition of spin-polarized electrons injected by the ferromagnetic metal layer into the group III-VI chalcogenide two-dimensional material, thereby generating a spin current via a channel loop connected with the group III-VI chalcogenide two-dimensional material; the polarizability of the spin current can be regulated and controlled by the morphology and the size of the ferromagnetic metal cluster.
9. A method of generating a spin current of controlled polarizability as claimed in claim 8, wherein: the radiation wavelength of the laser is 250 nm-580 nm, and the radiation power of the laser is 50 muW-5 mW.
10. A method of generating a spin current of controlled polarizability as claimed in claim 8, wherein: the range of the generation temperature T of the spin current is more than or equal to 0K and less than or equal to 300K.
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